CN102286777B - 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 - Google Patents
氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 Download PDFInfo
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- CN102286777B CN102286777B CN2011102490393A CN201110249039A CN102286777B CN 102286777 B CN102286777 B CN 102286777B CN 2011102490393 A CN2011102490393 A CN 2011102490393A CN 201110249039 A CN201110249039 A CN 201110249039A CN 102286777 B CN102286777 B CN 102286777B
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| CN2011102490393A CN102286777B (zh) | 2011-08-26 | 2011-08-26 | 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 |
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| CN2011102490393A CN102286777B (zh) | 2011-08-26 | 2011-08-26 | 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 |
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| CN102286777A CN102286777A (zh) | 2011-12-21 |
| CN102286777B true CN102286777B (zh) | 2013-11-13 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418143A (zh) * | 2011-11-17 | 2012-04-18 | 山东大学 | 一种以H3PO4腐蚀衬底制备自剥离GaN单晶的方法 |
| CN104060323A (zh) * | 2014-07-14 | 2014-09-24 | 山东大学 | 通过制备N面锥形结构衬底获得自支撑GaN单晶的方法 |
| CN104900779B (zh) * | 2015-06-25 | 2018-10-19 | 苏州纳维科技有限公司 | 一种iii-v族半导体单晶衬底孔洞消除之后的表面结构及其制备方法 |
| CN107326444B (zh) * | 2017-07-21 | 2019-10-18 | 山东大学 | 一种水热腐蚀多孔衬底生长自支撑氮化镓单晶的方法 |
| CN114622274B (zh) * | 2020-12-11 | 2023-08-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓体单晶及其生长方法 |
| CN112708937A (zh) * | 2020-12-18 | 2021-04-27 | 山东大学 | 一种用于GaN单晶生长衬底的处理方法及处理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870223A (zh) * | 1999-09-28 | 2006-11-29 | 住友电气工业株式会社 | 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 |
| CN101432471A (zh) * | 2006-04-28 | 2009-05-13 | 住友电气工业株式会社 | 制作氮化镓结晶的方法及氮化镓晶片 |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870223A (zh) * | 1999-09-28 | 2006-11-29 | 住友电气工业株式会社 | 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 |
| CN101432471A (zh) * | 2006-04-28 | 2009-05-13 | 住友电气工业株式会社 | 制作氮化镓结晶的方法及氮化镓晶片 |
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Denomination of invention: H3Po4etched seed crystals for growth of GaN single crystals by hydride vapor phase epitaxy and its preparation Effective date of registration: 20200602 Granted publication date: 20131113 Pledgee: Qilu bank Limited by Share Ltd. Ji'nan Huaiyin branch Pledgor: SICC Co.,Ltd. Registration number: Y2020980002693 |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 3 / F, block C, Yinhe building, Xinluo Road, hi tech Zone, Jinan City, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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