CN102280393A - Method for welding chip - Google Patents
Method for welding chip Download PDFInfo
- Publication number
- CN102280393A CN102280393A CN 201110208897 CN201110208897A CN102280393A CN 102280393 A CN102280393 A CN 102280393A CN 201110208897 CN201110208897 CN 201110208897 CN 201110208897 A CN201110208897 A CN 201110208897A CN 102280393 A CN102280393 A CN 102280393A
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- chip
- welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a method for welding a chip. The method comprises the following steps: firstly arranging a welding agent 32 on the surface of a welding plate 33 of a substrate 2; then mounting a welding plate surface 31 of a chip 1 aligning with a welding plate 33 of the substrate; then heating the substrate which is provided with the chip through a reflow soldering oven, curing the welding agent 32, and finishing the welding process of the chip. In some occasions, reinforcement is required to enable the welding to be more reliable. The method provided by the invention can replace the traditional chip inversion packaging process, the production efficiency is improved, and the production cost is lowered.
Description
Technical field
The present invention relates to the electronic component welding field, chips welding field particularly is specifically related to a kind of welding method of chip, can be extensive use of in fields such as Chip Packaging, smart card encapsulation, electronic product assemblings.
Background technology
The current electronic product package trade that is applied in of surface mounting technology generally uses, and is a kind of efficient, Device-General, production technology that automaticity is high of producing.But the device that is mounted all is through the packaged components and parts of secondary, components and parts packaging cost height, and small product size is big, needs the requirement of small ultra-thin especially in some application as the smart card series products, just can't realize.In order to realize this type of application demand, encapsulation technology has appearred in the industry, promptly on the pad of bare chip, made gold goal, allow pad give prominence to chip surface, adopt unidirectional different in nature conducting resinl that welding is finished in the pad conducting of bonding pads and substrate then.Though this technology can realize ultra-thin technological requirement, its production equipment belongs to special equipment, costs an arm and a leg, and production efficiency is lower, be 1/3 ~ 1/5 of conventional surface mounting device, therefore will realize large batch of production, just need carry out a large amount of equipment investments and could realize.
Costing an arm and a leg of the unidirectional different in nature conducting resinl of raw material of employing reverse packaging process, and it is bigger that the performance of product is influenced by environmental factors, can cause the variation of welding effect as condition differences such as ambient temperature, koniology, pressure, have obviously potential weld failure risk.
The present invention for solve chips welding produce in relevant problem points, consider from the cost angle, unidirectional different in nature conducting resinl with high costs, traditional welding agent (as tin cream) is 1/10 price of unidirectional different in nature conducting resinl, has inundatory cost advantage; From production equipment, it is general that the conventional surface mounting device belongs to industry, and the maintenance cost of equipment and equipment is lower; From welding reliability, the working condition and the welding effect of traditional welding agent are reliable and stable, meet the demand of production in enormous quantities.According to above analysis, we have proposed brand-new solution, the production technology of ultrathin chip are simplified, efficient improves, reliability is higher, cost is lower.
Summary of the invention
The present invention is directed to the problems referred to above, in the welding of chip is produced, proposed the notion of the direct soldering of bare chip.This novel production method is handled by the pad of bare chip being done non-calorize, then by the attachment process of general surface mounting device, welding compound is solidified the pad of chip bonding pad and substrate by the Reflow Soldering mode and couples together reliably.This method is with traditional surface mount process extension and is applied in the welding process of bare chip, effectively reduces production costs, reduces small product size and thickness, enhances productivity.
In order to achieve the above object, the present invention adopts following technical scheme:
A kind of welding method of chip, it is characterized in that, comprise the steps: earlier welding compound to be arranged on the bond pad surface of substrate, adopt manipulator that the pad of bonding pads align substrates is installed then, the substrate that will install chip again solidifies welding compound by the reflow soldering heating, finishes the process of chips welding;
Described welding compound is tin cream or silver slurry; Described substrate is that epoxy resin applies copper circuit board (PCB), polyimides (PI) applies copper circuit board or PETG (PET) circuit board; Described manipulator is the device pick device of surface-mounting equipment; Described chip is single the bare chip that does not encapsulate after wafer cuts through attenuate.
Further, described method is characterized in that, described welding compound is arranged on the bond pad surface of substrate, is by the steel mesh typography welding compound of glue to be formed on the substrate pads surface to have certain thickness figure, and its thickness is between 25um-200um.
Further again, described method is characterized in that, described packing chip is disk type packing, capsule packing or tape package.
Further again, described method is characterized in that, described bonding pads can effectively soak into chip bonding pad and welding compound through non-calorize table PROCESS FOR TREATMENT.
Further again, described method is characterized in that, described reflow soldering heating is the phase I preheating section with the process that welding compound solidifies: temperature rises to T1 from room temperature earlier; The second stage soaking zone: temperature keeps between T2; The phase III reflux section: temperature is a reflux temperature during T3-T4-T3, and quadravalence section cooling section: temperature drops to room temperature from T3;
T1 is 100-120 ℃, 150-170 ℃ or 180 ℃-200 ℃;
T2 is 100-150 ℃, 150-200 ℃ or 180 ℃-230 ℃;
T3 is 140-160 ℃, 190-210 ℃ or 220 ℃-240 ℃;
T4 is 160-180 ℃, 210-250 ℃ or 240 ℃-280 ℃;
Select corresponding temperature range at different materials, welding compound.
Further again, described method is characterized in that, for the demanding product of weld strength, need around chip reinforcement glue be set, and makes welding reliable.
Further again, described method is characterized in that, described reinforcement glue is ultraviolet curing glue, silica gel or epoxide-resin glue.
Further again, described method is characterized in that, the position of reinforcement glue is arranged on 4 angles of chip.
Further again, described method is characterized in that, the position of reinforcement glue is arranged on two opposite side of chip or all around.
Further again, described method is characterized in that, all seal chip the position of reinforcement glue.
According to the chips welding that technique scheme forms, simplify traditional approach and earlier Chip Packaging has been become module, carry out surface-pasted manufacture craft again, also can remedy the shortcoming that apparatus expensive, production efficiency are low, product reliability is low of reverse packaging process.Method of the present invention plays the effect of promotion for the progress of electronic industry.
Description of drawings
Further specify the present invention below in conjunction with the drawings and specific embodiments.
Fig. 1 is a chips welding cross-sectional view of the present invention.
Fig. 2 is the schematic three dimensional views of chips welding of the present invention.
Fig. 3 is four jiaos of reinforcement glue of the present invention position view.
Fig. 4 is a circular periphery filler reinforcement schematic diagram of the present invention.
Fig. 5 is the circular integral-filled reinforcement schematic diagram of the present invention.
Fig. 6 is a filler reinforcement schematic diagram in both sides of the present invention.
Fig. 7 is the present invention's four limit filler reinforcement schematic diagrames.
Fig. 8 is a filler reinforcement generalized section in edge of the present invention.
Fig. 9 is the integral-filled reinforcement generalized section of the present invention.
Embodiment
In order to make technological means of the present invention, creation characteristic, to reach purpose and effect is easy to understand,, further set forth particular content of the present invention below in conjunction with concrete diagram.
The objective of the invention is the pad of bare chip and the pad of substrate to be carried out physical connection, simplified the production technology of chips welding, increase product reliability, and effectively reduce cost the purpose of enhancing productivity by traditional surface mount process.
Chip welded structure figure as depicted in figs. 1 and 2, at first welding compound 32 is arranged on pad 33 surfaces of substrate 1, adopt manipulator that the pad 33 of pad 31 align substrates 1 of chip 1 is installed then, pressing the direction of arrow 4 fits, the substrate that will install chip 1 again solidifies welding compound by the reflow soldering heating, finishes the process of chips welding; In this process, the amount of welding compound is selected according to the size of pad, is as the criterion can fully connecting.Can adjust by the thickness of selecting steel mesh and the size that printing is windowed in the practical operation.The thickness of steel mesh can be selected between from 25um to 200um.
In the process that welding compound is solidified in the reflow soldering heating, select different welding compounds for use and cooperate corresponding heating-up temperature to realize according to the material of substrate.Adopt following temperature as deposited copper circuit board (PCB) of epoxy resin and the deposited copper circuit board of polyimides (PI):
The phase I preheating section: temperature rises to T1 from room temperature earlier; The second stage soaking zone: temperature keeps between T2; The phase III reflux section: temperature is a reflux temperature during T3-T4-T3, and quadravalence section cooling section: temperature drops to room temperature from T3;
T1 is 180 ℃-200 ℃;
T2 is 180 ℃-230 ℃;
T3 is 220 ℃-240 ℃;
T4 is 240 ℃-280 ℃;
As material is that PETG (PET) circuit board adopts following temperature:
T1 is 100-120 ℃;
T2 is 100-150 ℃;
T3 is 140-160 ℃;
T4 is 160-180 ℃.
In the time of for the chips welding of size large-size, can select that reinforcement is carried out at four angles of chip and fix.As shown in Figure 3, on 4 angles of chip 1, reinforcement glue 51,52,53,54 is put on substrate respectively, is allowed it freely spread, and by curing process with the reinforcement adhesive curing, play the purpose of protection chip and pad.As Fig. 4, Fig. 6, shown in Figure 7, the shape of reinforcement glue can be circular, also can be bilateral strip, or four limits is square, all can effectively protect chip and pad.
In the time of for the chips welding of reduced size, can select chip is carried out the complete reinforcement of sealing.As Fig. 5 and shown in Figure 9, chip and solder joint are surrounded by reinforcement glue fully, can obtain product more reliably behind overcuring.
Shown in the profile of Fig. 8 and Fig. 9, in reinforcement glue applying glue process, because colloid 5 is objects that semi liquid state flows, glue may penetrate in the slit of chip 1 and substrate 2, and colloid 5 and chip 1, substrate 2 are combined together, effectively protects chip and pad.
It is the chips welding of rigid bonded copper base (PCB) of medium that the welding method of above-mentioned a kind of chip can be applicable to epoxy resin.
It is the chips welding of the deposited copper circuit board of flexibility of medium that the welding method of above-mentioned a kind of chip can be applicable to polyimides (PI).
It is the chips welding of the deposited copper circuit board of flexibility of medium that the welding method of above-mentioned a kind of chip can be applicable to PETG (PET).
In sum; only be the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.
Claims (10)
1. the welding method of a chip, it is characterized in that, comprise the steps: earlier welding compound to be arranged on the bond pad surface of substrate, adopt manipulator that the pad of bonding pads align substrates is installed then, the substrate that will install chip again solidifies welding compound by the reflow soldering heating, finishes the process of chips welding;
Described welding compound is tin cream or silver slurry; Described substrate is that epoxy resin applies copper circuit board (PCB), polyimides (PI) applies copper circuit board or PETG (PET) circuit board; Described manipulator is the device pick device of surface-mounting equipment; Described chip is single the bare chip that does not encapsulate after wafer cuts through attenuate.
2. method according to claim 1, it is characterized in that, described welding compound is arranged on the bond pad surface of substrate, is by the steel mesh typography welding compound of glue to be formed on the substrate pads surface to have certain thickness figure, and its thickness is between 25um-200um.
3. method according to claim 1 is characterized in that, described packing chip is disk type packing, capsule packing or tape package.
4. method according to claim 1 is characterized in that, described bonding pads can effectively soak into chip bonding pad and welding compound through non-calorize table PROCESS FOR TREATMENT.
5. method according to claim 1 is characterized in that, described reflow soldering heating is the phase I preheating section with the process that welding compound solidifies: temperature rises to T1 from room temperature earlier; The second stage soaking zone: temperature keeps between T2; The phase III reflux section: temperature is a reflux temperature during T3-T4-T3, and quadravalence section cooling section: temperature drops to room temperature from T3;
T1 is 100-120 ℃, 150-170 ℃ or 180 ℃-200 ℃;
T2 is 100-150 ℃, 150-200 ℃ or 180 ℃-230 ℃;
T3 is 140-160 ℃, 190-210 ℃ or 220 ℃-240 ℃;
T4 is 160-180 ℃, 210-250 ℃ or 240 ℃-280 ℃;
Select corresponding temperature range at different materials, welding compound.
6. method according to claim 1 is characterized in that, for the demanding product of weld strength, need around chip reinforcement glue be set, and makes welding reliable.
7. method according to claim 6 is characterized in that, described reinforcement glue is ultraviolet curing glue, silica gel or epoxide-resin glue.
8. method according to claim 6 is characterized in that, the position of reinforcement glue is arranged on 4 angles of chip.
9. method according to claim 6 is characterized in that, the position of reinforcement glue is arranged on 2 opposite side or 4 weeks of chip.
10. method according to claim 6 is characterized in that the position of reinforcement glue is all sealed chip.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110208897 CN102280393A (en) | 2011-07-25 | 2011-07-25 | Method for welding chip |
| CN 201210198329 CN102903646A (en) | 2011-07-25 | 2012-06-16 | Chip welding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110208897 CN102280393A (en) | 2011-07-25 | 2011-07-25 | Method for welding chip |
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| CN102280393A true CN102280393A (en) | 2011-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110208897 Pending CN102280393A (en) | 2011-07-25 | 2011-07-25 | Method for welding chip |
| CN 201210198329 Pending CN102903646A (en) | 2011-07-25 | 2012-06-16 | Chip welding method |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201210198329 Pending CN102903646A (en) | 2011-07-25 | 2012-06-16 | Chip welding method |
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Cited By (7)
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| CN102717160A (en) * | 2012-06-24 | 2012-10-10 | 成都聚合科技有限公司 | Manufacturing process for heating and curing photovoltaic concentrator cell chip and circuit substrate |
| CN104282582A (en) * | 2014-09-17 | 2015-01-14 | 中南大学 | Method for packaging Ni-P substrate |
| CN106686909A (en) * | 2017-02-22 | 2017-05-17 | 联宝(合肥)电子科技有限公司 | Surface assembly method and device of electronic circuit, circuit board and electronic device |
| CN110040683A (en) * | 2019-04-12 | 2019-07-23 | 武汉耐普登科技有限公司 | Handware, encapsulating structure and its manufacturing method |
| CN110548947A (en) * | 2019-08-21 | 2019-12-10 | 湖北三江航天险峰电子信息有限公司 | Welding method of cold plate assembly |
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-
2011
- 2011-07-25 CN CN 201110208897 patent/CN102280393A/en active Pending
-
2012
- 2012-06-16 CN CN 201210198329 patent/CN102903646A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102717160A (en) * | 2012-06-24 | 2012-10-10 | 成都聚合科技有限公司 | Manufacturing process for heating and curing photovoltaic concentrator cell chip and circuit substrate |
| CN104282582A (en) * | 2014-09-17 | 2015-01-14 | 中南大学 | Method for packaging Ni-P substrate |
| CN104282582B (en) * | 2014-09-17 | 2017-02-01 | 中南大学 | Method for packaging Ni-P substrate |
| CN106686909A (en) * | 2017-02-22 | 2017-05-17 | 联宝(合肥)电子科技有限公司 | Surface assembly method and device of electronic circuit, circuit board and electronic device |
| CN110040683A (en) * | 2019-04-12 | 2019-07-23 | 武汉耐普登科技有限公司 | Handware, encapsulating structure and its manufacturing method |
| CN110548947A (en) * | 2019-08-21 | 2019-12-10 | 湖北三江航天险峰电子信息有限公司 | Welding method of cold plate assembly |
| CN113707785A (en) * | 2020-05-20 | 2021-11-26 | 佛山市国星光电股份有限公司 | Preparation method of LED light-emitting device, LED light-emitting device and display panel |
| CN113707785B (en) * | 2020-05-20 | 2024-04-09 | 佛山市国星光电股份有限公司 | Preparation method of LED light-emitting device, LED light-emitting device and display panel |
| CN113270260A (en) * | 2021-05-10 | 2021-08-17 | 深圳顺络电子股份有限公司 | Planar transformer and preparation method thereof |
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| CN102903646A (en) | 2013-01-30 |
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Open date: 20111214 |