CN102279438A - Optical fiber evanescent field sensing optical fiber with novel micro-nano structure - Google Patents
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Abstract
Description
技术领域 technical field
本发明属于光纤生化传感器技术领域,涉及用于医疗检测、环境监控和生化反恐等领域的光纤生化传感器的制作,具体涉及一种保留包层和包层替换的新型微纳结构的光纤消逝场传感光纤。The invention belongs to the technical field of optical fiber biochemical sensors, and relates to the manufacture of optical fiber biochemical sensors used in the fields of medical detection, environmental monitoring, biochemical anti-terrorism, etc., and specifically relates to a new type of optical fiber evanescent field sensor with a new micro-nano structure for cladding retention and cladding replacement. Sensitive fiber.
背景技术 Background technique
光纤消逝场传感器是上世纪80年代提出来的一种新型功能型的光纤传感器,它利用传感光纤激发的消逝场能量与处于能量作用范围内的被测物质相互作用,引起光纤内传输能量的吸收来实现传感效应。参与反应的消逝场能量越多,相应光纤传感器的灵敏度就越高。它的核心部件是光纤消逝场传感光纤。传统的传感光纤中,通常将光纤的包层除掉,使被测物质与光纤的消逝场能量发生相互作用完成传感过程。传感光纤激发的消逝场能量的多少对传感器灵敏度的高低起到决定的作用,对传感器性能的优劣有着至关重要的影响。The optical fiber evanescent field sensor is a new type of functional optical fiber sensor proposed in the 1980s. It utilizes the evanescent field energy excited by the sensing fiber to interact with the measured substance within the range of energy action, causing the transmission of energy in the optical fiber. absorption to achieve the sensing effect. The more energy of the evanescent field involved in the reaction, the higher the sensitivity of the corresponding optical fiber sensor. Its core component is the optical fiber evanescent field sensing fiber. In the traditional sensing optical fiber, the cladding of the optical fiber is usually removed, so that the measured substance interacts with the evanescent field energy of the optical fiber to complete the sensing process. The amount of evanescent field energy excited by the sensing fiber plays a decisive role in the sensitivity of the sensor, and has a crucial impact on the performance of the sensor.
通过激发高阶模式的光波导,促使更多的消逝场能量参与与被测物质的相互作用,可有效提高传感器的灵敏度。为获得高阶模式的光波导,许多学者通过将传感光纤制作成锥形、组合锥形、U形等结构或通过对入射光的角度调制等措施对传感器进行改良。如文献[B.D.Gupta,H.Dodeja,A.K.Tomar,Fibre-optic evanescent field absorption sensor basedon a U-shaped probe(基于能量吸收的U形光纤消逝场传感器),1996,Optical and Quantum Electronics 28:1629-1639和Anna Grazia Mignani,Riccardo Falciai,Leonardo Ciaccheri,Evanescent wave absorptionspectroscopy by means of bi-tapered multimode optical fibers(基于能量吸收的多模双锥形光纤消逝场探测仪),1998,52(4):546-551和Yihui Wu,Xiaohong Deng,Feng Li,Xuye Zhuang,Less-mode optic fiber evanescentwave absorbing sensor:Parameter design for high sensitivity liquiddetection(基于能量吸收的高灵敏度溶液检测少模光纤消逝场传感器的参数设计),2007,Sensors and Actuators B 122:127-133]等所述。虽然通过将传感光纤制成锥形、组合锥形、U形等形状可以较好的激励传感光纤中的高阶模式的光波导,但是因为光在传感光纤中传播时存在着模式损耗,降低了传感器的信噪比,它们激发的高阶光波导中的消逝场能量最多也只有光纤中传输总能量的30%,同样存在着传感能量低的问题,对传感器灵敏度的提高能力有限。通过调制入射光的角度进行高阶模式光波导激励的方法增加了传感器系统的复杂性,不利于传感器的小型化、集成化发展。By exciting the optical waveguide of the high-order mode, more evanescent field energy is encouraged to participate in the interaction with the measured substance, which can effectively improve the sensitivity of the sensor. In order to obtain the optical waveguide of high-order mode, many scholars have improved the sensor by making the sensing fiber into a tapered, combined tapered, U-shaped structure or by adjusting the angle of the incident light. Such as literature [B.D.Gupta, H.Dodeja, A.K.Tomar, Fiber-optic evanescent field absorption sensor based on a U-shaped probe (U-shaped optical fiber evanescent field sensor based on energy absorption), 1996, Optical and Quantum Electronics 28: 1629-1639 and Anna Grazia Mignani, Riccardo Falciai, Leonardo Ciaccheri, Evanescent wave absorption spectroscopy by means of bi-tapered multimode optical fibers, 1998, 52(4): 546-551 and Yihui Wu, Xiaohong Deng, Feng Li, Xuye Zhuang, Less-mode optic fiber evanescent wave absorbing sensor: Parameter design for high sensitivity liquid detection (parameter design for high sensitivity solution detection of few-mode fiber evanescent field sensor based on energy absorption), 2007, Sensors and Actuators B 122:127-133] and so on. Although the optical waveguide of the high-order mode in the sensing fiber can be better excited by making the sensing fiber into a tapered shape, a combined tapered shape, a U shape, etc., there is a mode loss when the light propagates in the sensing fiber , reduces the signal-to-noise ratio of the sensor, and the evanescent field energy in the high-order optical waveguide excited by them is at most only 30% of the total energy transmitted in the optical fiber. There is also the problem of low sensing energy, and the ability to improve the sensitivity of the sensor is limited. The method of exciting the high-order mode optical waveguide by modulating the angle of the incident light increases the complexity of the sensor system, which is not conducive to the development of miniaturization and integration of the sensor.
光子晶体光纤由于其特异的物理特性,尤其是空心光子晶体光纤(hollow-core photonic bandgap fiber)的空心区内存在着大量的光能,为高灵敏度光纤消逝场传感器的研制提供了载体。通过将被测物质填充到光子晶体光纤的空心内,可以得到新型的光纤消逝场传感器,但是工艺过程非常复杂,传感器的设计、分析工作量大,探测时间长,且难以把与被测物质反应的敏感膜或特征修饰在光纤的空心壁上,限制了传感器的灵敏度,制约了该类传感器的应用和发展。如文献Jian Sun,Chi-ChiuChan,Yi-Fan Zhang,Analysis of hollow-core photonic bandgap fibers forevanescent wave biosensing(应用于消逝场生物传感的空心光子晶体带隙光纤分析),Journal of Biomedical Optics,2008,13(5):054048和Y.Y.Huang,Y.Xu,and A.Yariv,Fabrication of functional microstructured opticalfibers through a selective-filling technique(利用选择性填充制作微纳结构功能光纤的工艺方法),Appl.Phys.Lett.,2004,85:5182-5184所述。Due to its specific physical characteristics, especially the hollow-core photonic crystal fiber (hollow-core photonic bandgap fiber), there is a large amount of light energy in the hollow region, which provides a carrier for the development of high-sensitivity optical fiber evanescent field sensors. By filling the measured substance into the hollow of the photonic crystal fiber, a new type of optical fiber evanescent field sensor can be obtained, but the process is very complicated, the design and analysis of the sensor is heavy, the detection time is long, and it is difficult to react with the measured substance. The sensitive film or feature of the fiber is modified on the hollow wall of the fiber, which limits the sensitivity of the sensor and restricts the application and development of this type of sensor. For example, Jian Sun, Chi-ChiuChan, Yi-Fan Zhang, Analysis of hollow-core photonic bandgap fibers forevanescent wave biosensing (analysis of hollow-core photonic crystal bandgap fiber applied to evanescent field biosensing), Journal of Biomedical Optics, 2008, 13(5): 054048 and Y.Y.Huang, Y.Xu, and A.Yariv, Fabrication of functional microstructured optical fibers through a selective-filling technique (process method for making micro-nano structured functional optical fibers by selective filling), Appl.Phys. Lett., 2004, 85:5182-5184.
发明内容 Contents of the invention
为解决技术背景中传感光纤激发的消逝场能量低、制作工艺复杂的问题,本发明的目的是提供一种新型微纳结构光纤消逝场传感光纤。In order to solve the problems of low energy of the evanescent field excited by the sensing fiber and complicated manufacturing process in the technical background, the purpose of the present invention is to provide a novel micro-nano structure optical fiber evanescent field sensing fiber.
为实现所述目的,本发明提供新型微纳结构的光纤消逝场传感光纤的技术方案是:保留光纤包层的微纳结构的光纤消逝场传感光纤和包层替换的微纳结构的光纤消逝场传感光纤;所述的保留光纤包层的新型微纳结构的光纤消逝场传感光纤包括:在光纤上保留待处理光纤段的光纤包层,在光纤包层上设置有径向的微纳孔,微纳孔沿待处理光纤段的轴向设定有孔距,每个微纳孔的孔底距光纤纤芯的界面设定有一段距离,微纳孔内填充被测物质进行折射率调制;所述的包层替换的新型微纳结构的光纤消逝场传感光纤的特征包括:去除光纤的待处理光纤段的光纤包层的一部分形成残留包层,残留包层与光纤纤芯界面之间有一段距离,在残留包层上覆盖一层替换介质层,在替换介质层上设置有径向的微纳孔微纳孔沿待处理光纤段的轴向设定有孔距;微纳孔内填充被测物质进行折射率调制。In order to achieve the stated purpose, the present invention provides a technical solution for the optical fiber evanescent field sensing fiber with novel micro-nano structure: the optical fiber evanescent field sensing optical fiber with the micro-nano structure of the fiber cladding and the optical fiber with the micro-nano structure replaced by the cladding Evanescent field sensing optical fiber; the optical fiber evanescent field sensing optical fiber of the novel micro-nano structure that retains the optical fiber cladding includes: retaining the optical fiber cladding of the fiber section to be processed on the optical fiber, and radially arranged on the optical fiber cladding Micro-nano hole, the micro-nano hole is set with a hole distance along the axial direction of the optical fiber section to be processed, and the bottom of each micro-nano hole is set at a certain distance from the interface of the fiber core. Refractive index modulation; the characteristics of the optical fiber evanescent field sensing fiber of the novel micro-nano structure replaced by the cladding include: removing a part of the cladding of the optical fiber section of the optical fiber to be processed to form a residual cladding, and the residual cladding and the optical fiber There is a certain distance between the core interfaces, and a replacement medium layer is covered on the residual cladding, and radial micro-nanoholes are arranged on the replacement medium layer, and the hole distance is set along the axial direction of the fiber segment to be processed; The measured substance is filled in the micro-nano hole to modulate the refractive index.
优选实施例,所述距离在-10λ~10λ之间,λ是光源最长波长,负号表示微纳孔深入光纤纤芯内。In a preferred embodiment, the distance is between -10λ˜10λ, where λ is the longest wavelength of the light source, and the negative sign indicates that the micro-nano holes go deep into the fiber core.
优选实施例,所述轴向孔距在0.001λ~1000λ之间。In a preferred embodiment, the axial pitch is between 0.001λ˜1000λ.
优选实施例,所述微纳孔的尺寸在0.001λ~1000λ。In a preferred embodiment, the size of the micro-nanopores is in the range of 0.001λ˜1000λ.
优选实施例,被测物质的折射率控制在0.5n2~2n1之间,n1为光纤纤芯的折射率,n2为光纤包层的折射率。In a preferred embodiment, the refractive index of the measured substance is controlled between 0.5n 2 and 2n 1 , where n 1 is the refractive index of the fiber core, and n 2 is the refractive index of the fiber cladding.
优选实施例,所述残留包层的厚度在-0.4d~d之间,d为光纤外径根据选用光纤型号的不同而变化,负号表示光纤纤芯也被去除部分。In a preferred embodiment, the thickness of the residual cladding is between -0.4d~d, d is the outer diameter of the optical fiber, which varies according to the type of optical fiber selected, and the negative sign indicates that the core of the optical fiber is also removed.
优选实施例,所述替换介质层的折射率在1.3~2.0之间,替换介质层的厚度在1nm~2d之间,d为光纤外径根据所用光纤型号确定。In a preferred embodiment, the refractive index of the replacement medium layer is between 1.3 and 2.0, and the thickness of the replacement medium layer is between 1 nm and 2d, where d is the outer diameter of the optical fiber and is determined according to the type of optical fiber used.
本发明的有益效果:本发明的新型微纳结构的光纤消逝场传感光纤中,通过在保留光纤包层的传感光纤和包层替换的传感光纤上加工径向微纳孔结构,不需要除掉光纤包层,光纤强度高,则使传感器的抗冲击能力强,更适合在复杂苛刻的物理环境下使用。通过控制微纳孔的尺寸、周向布局、轴向布局以及孔底与光纤纤芯界面的距离,并在微纳孔内填充被测物质进行折射率的匹配调制,将传感光纤内的高阶模式光波导的能量诱导至光纤表面的微纳孔内形成消逝场,更有效的参与传感,提高传感器的灵敏度。该传感光纤制作工艺简单,成本低,为光纤消逝场传感器的进一步发展提供了一条崭新的途径。Beneficial effects of the present invention: In the optical fiber evanescent field sensing fiber of the novel micro-nano structure of the present invention, by processing the radial micro-nano hole structure on the sensing fiber retaining the fiber cladding and the sensing fiber replacing the cladding, no It is necessary to remove the cladding of the optical fiber, and the high strength of the optical fiber makes the sensor more resistant to impact and is more suitable for use in complex and harsh physical environments. By controlling the size, circumferential layout, axial layout and the distance between the bottom of the hole and the fiber core interface of the micro-nano hole, and filling the measured substance in the micro-nano hole for matching modulation of the refractive index, the high The energy of the order mode optical waveguide is induced to form an evanescent field in the micro-nano hole on the surface of the optical fiber, which can participate in the sensing more effectively and improve the sensitivity of the sensor. The manufacturing process of the sensing optical fiber is simple and the cost is low, which provides a new way for the further development of the optical fiber evanescent field sensor.
附图说明 Description of drawings
如图1a是本发明新型微纳结构的光纤消逝场传感光纤的制作示意图。Figure 1a is a schematic diagram of the fabrication of the optical fiber evanescent field sensing optical fiber with the novel micro-nano structure of the present invention.
图1b是本发明所用实验用光纤示意图。Fig. 1b is a schematic diagram of an experimental optical fiber used in the present invention.
图2a至图2b是修饰处理段光纤的截面示意图。2a to 2b are cross-sectional schematic diagrams of modified optical fibers.
图3a至图3c是微纳孔在光纤轴向排布的示意图。3a to 3c are schematic diagrams of micro-nano holes arranged in the axial direction of an optical fiber.
图4是保留光纤包层的新型微纳结构的光纤消逝场传感光纤的剖面示意图。Fig. 4 is a schematic cross-sectional view of a novel micro-nano-structure optical fiber evanescent field sensing fiber that retains the fiber cladding.
图5a至图5c是包层替换的光纤消逝场传感光纤的加工示意图。5a to 5c are schematic diagrams of processing cladding-replaced optical fiber evanescent field sensing fibers.
图6a至图6b是光纤包层保留的新型微纳结构的光纤消逝场传感光纤的模式电场云图。Fig. 6a to Fig. 6b are mode electric field cloud diagrams of the optical evanescent field sensing optical fiber with novel micro-nano structure retained in the optical fiber cladding.
图7a至图7b是包层替换的新型微纳结构的光纤消逝场传感光纤的模式电场云图。Fig. 7a to Fig. 7b are the model electric field cloud diagrams of the optical evanescent field sensing fiber with the new micro-nano structure replaced by the cladding.
具体实施方式 Detailed ways
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
如图1a示出本发明新型微纳结构的光纤消逝场传感光纤的制作示意图,图1b示出本发明所用一根实验用光纤1包括待处理光纤段2和不需要处理的光纤段3;本发明新型微纳结构的光纤消逝场传感光纤包括两种微纳结构的光纤消逝场传感光纤为:保留光纤包层的微纳结构的光纤消逝场传感光纤16和包层替换的微纳结构的光纤消逝场传感光纤23;是在一根实验用光纤1的待处理光纤段2上进行保留包层并在其上设置微纳孔结构的处理;包层替换的新型微纳结构的光纤消逝场传感光纤23是在一根实验用光纤1的待处理光纤段2上进行介质层替换包层并在其上设置微纳孔结构的处理。Fig. 1 a shows the schematic diagram of making the optical fiber evanescent field sensing fiber of the novel micro-nano structure of the present invention, and Fig. 1 b shows that an experimental optical fiber 1 used in the present invention includes the
1.所述的保留光纤包层的新型微纳结构的光纤消逝场传感光纤16包括:在光纤1上保留待处理光纤段2的光纤包层7,在光纤包层7上设置有径向的微纳孔8,微纳孔8沿待处理光纤段2的轴向设定有孔距15,每个微纳孔8的孔底10距光纤纤芯6的界面设定有一段距离11,微纳孔8内填充被测物质9进行折射率调制;1. The optical fiber evanescent field sensing fiber 16 of the novel micro-nano structure of retaining the optical fiber cladding comprises: retain the
保留光纤包层7的新型微纳结构的光纤消逝场传感光纤16的技术方案如下所示:图2a示出多个微纳孔8在光纤1周向均匀排布4,图2b示出多个微纳孔8在光纤1周向非均匀排布5,其中还示出光纤纤芯6、包层7、微纳孔8、被测物质9和孔底10。The technical scheme of the optical fiber evanescent field sensing fiber 16 with a novel micro-nano structure that retains the
取一段长度在0.2~100m的实验用光纤1,其种类可以是通讯用的单模光纤、多模光纤也可以是塑料光纤或其他特殊光纤,将实验用光纤1分为待处理光纤段2和不需要处理的光纤段3。首先对一根实验用光纤1的待处理光纤段2进行处理,所述处理是在实验用光纤1上的待处理光纤段2上进行打微纳孔8的修饰处理,待处理光纤段2的长度在5cm~100cm之间。首先对待处理的光纤段2进行打微纳孔8,孔底10距光纤纤芯6的距离11控制在-10λ~10λ之间,λ是入射光源的最长波长,负号表示微纳孔8可深至光纤纤芯6内,实验用光纤1的种类确定,且孔底10的具体数值确定后微纳孔8的深度即可确定。微纳孔8的形状可以是圆柱形、方形或其他规则多边形或不规则形状都可。Take a section of experimental optical fiber 1 with a length of 0.2-100m, which can be single-mode optical fiber, multi-mode optical fiber for communication, or plastic optical fiber or other special optical fiber, and divide experimental optical fiber 1 into
如图3a示出微纳孔8在光纤1的轴向均匀分布12的示意图,如图3b示出微纳孔8在光纤1的轴向交错分布13的示意图,如图3c示出微纳孔8在光纤1的轴向杂乱分布14的示意图,下面以图4示出保留光纤包层7的新型微纳结构的光纤消逝场传感光纤16的剖面图,及以圆柱形的微纳孔8为例对本发明内容进行阐述,在光纤1的待处理光纤段2上设置有多个圆周,在每个圆周上打圆柱形的微纳孔8的数量控制在2~50个,按照周向均匀分布4或非均匀分布5在光纤1的待处理光纤段2的每个圆周上。圆柱形的微纳孔8的轴向间距15的尺寸控制在0.01λ~1000λ之间,圆柱形的微纳孔8的排布形式可以规则排列12、交错排列13或杂乱排列14。圆柱形的微纳孔8的尺寸控制在0.001λ~1000λ范围之间,具体大小可在此范围内自由变动,圆柱形的微纳孔8的直径控制在0.001λ~1000λ范围之间。待处理光纤段2的长度控制在1cm~100cm之间,光纤1的总长度控制在0.1m~100m之间。不需要处理光纤段3是不打微纳孔8且保留光纤包层7,不需要处理光纤段3在本发明中起到传输光的作用,制作完成的如图4所示的保留光纤包层7的新型微纳结构的光纤消逝场传感光纤16。Figure 3a shows a schematic diagram of micro-nanoholes 8 uniformly distributed 12 in the axial direction of optical fiber 1, Figure 3b shows a schematic diagram of micro-nanoholes 8 staggered
光纤纤芯6的折射率为n1,光纤包层7的折射率为n2。检测时,调配填充在微纳孔8内的被测物质9的折射率n9,使n9控制在0.5n2~2n1之间。特殊的光纤结构,结合对微纳孔8内填充的被测物质9折射率的精确调控,就形成了保留光纤包层7的新型微纳结构的光纤消逝场传感光纤16。The refractive index of the
2.替换光纤包层7的新型微纳结构的光纤消逝场传感光纤23的技术方案如下所示:所述的包层替换的新型微纳结构的光纤消逝场传感光纤23的特征包括:去除光纤1的待处理光纤段2的光纤包层7的一部分形成残留包层20,残留包层20与光纤纤芯6界面之间有一段距离19,在残留包层20上覆盖一层替换介质层21,在替换介质层21上设置有径向的微纳孔8,微纳孔8沿待处理光纤段2的轴向设定有孔距15;微纳孔8内填充被测物质9进行折射率调制。2. The technical scheme of the optical fiber evanescent
如图5a是光纤1除掉待处理光纤段2的光纤包层7示意图,图5b是光纤1除掉待处理光纤段2的光纤包层7后填充替换介质层21后的示意图,图5c是光纤包层7替换后的新型微纳结构的光纤消逝场传感光纤23的示意图。图中示锥形过渡层17、除包层区域18、距离19、残留包层20、替换介质层21及替换介质层厚度22;Figure 5a is a schematic diagram of the optical fiber 1 removing the
将光纤1中待处理光纤段2的光纤包层7除掉。如果选用光纤包层7的材料是掺杂二氧化硅,则多用氢氟酸(HF)湿法腐蚀的方法除掉光纤包层7,HF在径向腐蚀二氧化硅时,在轴向上对二氧化硅也有腐蚀作用,所以除掉光纤包层7处会有一锥形过渡层17存在。当选用的光纤包层7是其他材料,例如塑料时,一般用切割的方法除掉光纤包层7,则不会有锥形过渡层17。残留包层20的距光纤纤芯6的界面距离19控制范围在-0.4d-~d,d光纤外径根据选用光纤型号的不同而变化,负号表示光纤芯层6也被除掉一部分,然后在待处理光纤段2的去除了光纤包层7的部分上覆盖替换介质层21,替换介质层的厚度22控制在1nm~2d之间,d为光纤外径根据所用光纤型号确定。替换介质层21的折射率n的大小控制在1.3~2.0之间。The
然后在替换介质层21上打微纳孔8,待处理光纤段2的圆周上微纳孔的个数,以及微纳孔8在待处理光纤段2的圆周和轴向的分布形式,轴向孔距15、孔底10距光纤纤芯6界面的距离11以及微纳孔8的形状等和保留光纤包层7的新型微纳结构光纤消逝场传感光纤16的要求相同。光纤1的长度,待处理的待处理光纤段2的长度要求也和保留光纤包层7的新型微纳结构的光纤消逝场传感光纤16的要求相同。Then punch micro-nanoholes 8 on the
调配被测物质9的折射率,并将其填充到微纳孔8内。被测物质9的折射率控制在1.1~2.0之间。本发明特殊的光纤结构结合对被测物质9的折射率的精确调控,就形成了替换光纤包层7的新型微纳结构光纤消逝场传感光纤23。Adjust the refractive index of the measured
新型微纳结构的光纤消逝场传感光纤本身是一个器件与检测方法的结合体,本发明要求对填充在微纳孔8内的被测物质的折射率进行控制。在传感光纤上加工出满足要求的特殊微纳结构后,调制光纤芯层6、光纤包层7、替换介质层21以及被测物质9的折射率使之相互匹配,就可以将所述传感光纤内高阶光波导的能量诱导至光纤1表面的微纳孔8内进行传感,达到发明要求。The optical fiber evanescent field sensing fiber with novel micro-nano structure itself is a combination of a device and a detection method. The present invention requires controlling the refractive index of the measured substance filled in the
1、包层保留的新型微纳结构光纤消逝场传感光纤1. A new type of micro-nano structure optical fiber evanescent field sensing fiber with cladding retention
取一段长度35cm的光纤1,光纤纤芯6直径18μm,光纤包层7直径80μm,待处理光纤段2的长度为10cm,入射光波长1.554μm。孔底10距纤芯界面距离为1μm,光纤包层7的折射率1.4378,光纤芯层6的折射率为1.4459,微纳孔8内被测物质9的折射率为1.4475,微纳孔8的孔径为5μm,4个微纳孔8均匀分布在待处理光纤段2的圆周上。取打微纳孔8光纤的某界面,分析其中光传播模式的特性,可得有效模数小于1.4443的高阶模式光波导的能量主要在微纳孔8内分布参与传感,而有效模数大于1.4443的低阶模式光波导的能量主要在光纤纤芯6内传播,起到信息传输的作用。图6a是有效模数为1.444297的高阶模式光波导的电场分量云图,约86.2%的能量在微纳孔内参与传感。图6b是有效模数为1.444887的低阶模式光波导的电场分量云图,约97.5%的能量约束在纤芯内传播。Take a section of optical fiber 1 with a length of 35 cm, the diameter of the
2、包层替换的新型微纳结构光纤消逝场传感光纤2. A new type of micro-nano structure optical fiber evanescent field sensing fiber with cladding replacement
取另一段长度35cm的实验用光纤1,光纤纤芯6直径18μm,光纤纤芯6的折射率为1.445,光纤包层7的直径为80μm,光纤包层7的折射率为1.4378,待处理光纤段2长度10cm,除掉光纤包层7后残留包层的厚度为1μm,填充替换介质层的折射率为1.4358,填充厚度30μm,入射光波长1.554μm。4个微纳孔8均匀分布在光纤1的圆周上,孔径5μm,孔底10距光纤纤芯5的界面的距离为1μm,微纳孔8内被测物质9的折射率为1.447。取打微纳孔的待处理光纤段2的某界面,分析其中传播模式的特性,可得有效模数小于1.44362的高阶模式光波导的能量主要在微纳孔内分布参与传感,而有效模数大于1.44362的低阶模式光波导的能量主要在光纤纤芯内6传播,起到信息传输的作用。图7a是有效模数为1.443615的高阶模式光波导的电场分量云图,约88.1%的能量在微纳孔内参与传感。图7b是有效模数为1.44401的低阶模式光波导的电场分量云图,约96.4%的能量约束在光纤纤芯6内传播。Take another experimental optical fiber 1 with a length of 35 cm, the diameter of the
以上所述,仅为本发明中的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉该技术的人在本发明所揭露的技术范围内,可理解想到的变换或替换,都应涵盖在本发明的包含范围之内。The above is only a specific implementation mode in the present invention, but the scope of protection of the present invention is not limited thereto. Anyone familiar with the technology can understand the conceivable transformation or replacement within the technical scope disclosed in the present invention. All should be covered within the scope of the present invention.
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