CN102262349B - Mask plate for semiconductor technique - Google Patents
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- CN102262349B CN102262349B CN 201010182691 CN201010182691A CN102262349B CN 102262349 B CN102262349 B CN 102262349B CN 201010182691 CN201010182691 CN 201010182691 CN 201010182691 A CN201010182691 A CN 201010182691A CN 102262349 B CN102262349 B CN 102262349B
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Abstract
The invention provides a mask plate for semiconductor technique. The mask plate comprises at least one mask plate cutting channel. The mask plate cutting channel comprises at least one pollution detection pattern region, and the random edge of the pollution detection pattern regions is not beyond the boundary of the mask plate cutting channel. The pollution detection pattern region is used for detecting the pollution on the mask plate. The pollution detection pattern region includes a plurality of lines; two ends of each line are intersected with the boundary of the pollution detection pattern region. Not only the pollution on the mask plate can be effectively detected on line, so that the pollution can be timely removed, the yield of the semiconductor device can be improved, but also the cost and the time for detecting the pollution can be reduced by utilizing the mask plate with the pollution detection pattern region of the invention.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly for the mask plate of semiconductor technology.
Background technology
In the manufacturing process of integrated circuit, photoetching process becomes a kind of indispensable technology already.Photoetching process mainly is first with the pattern that designs, be formed on one or more mask plates such as circuit pattern, contact hole pattern etc., and then utilize step-by-step scanning photo-etching device to be transferred on the photoresist layer on the wafer in the pattern on the mask plate by exposure program.
In actual industrial production, the pollution of mask plate is a problem always.Pollution may be by mask plate process/store, mask plate is made, produce in residual or other semiconductor fabrication of the air blowing processing of mask plate, film framework.It is vaporific pollution that a kind of pollution is wherein arranged, shown in 101 zones of Fig. 1.Vaporific pollution is a kind of sediment that is deposited in mask flaggy surface, and this sediment is to be produced by chemical residue or impurity that mask plate cleans wafer factory in the exposure or board environment.For example, contain ammonium salt (NH when use
4) and sulfate (SO
4) solution clean mask plate, when being exposed to short wavelength's ultraviolet light (for example the semicon industry wavelength that begun to adopt is the photoetching process of the ArF laser technology of 193nm at present), polluting and become more obvious.Because the existence of pollution of mask plate, so that the design transfer out of true that becomes on the mask plate, probably cause the scrapping of semiconductor devices of made, reduce the yields of semiconductor devices.Therefore, need to the pollution on the mask plate be detected, then according to testing result, when finding to pollute, remove pollution by cleaning.
The method of traditional detection pollution of mask plate is to adopt special-purpose mask plate detection system, for example STARlight-2 of KLA-Tencor company
TMMask plate detection system etc.It is very expensive that but the mask plate detection system that adopts this special use is carried out the detection of pollution of mask plate, and the time is longer, every mask plate needs 2～4 hours, this not only affects the production efficiency of semiconductor devices, increased simultaneously production cost, this is difficult to bear for medium and small sized enterprises.
Therefore, need a kind of method and apparatus, can either detect timely and effectively the pollution on the mask plate, pollute in order in time remove, improve the yields of semiconductor devices, can reduce again and detect the cost that pollutes and shorten the spent time of detecting.
Summary of the invention
Introduced the concept of a series of reduced forms in the summary of the invention part, this will further describe in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to determine technical scheme required for protection.
The invention provides a kind of mask plate for semiconductor technology, described mask plate has target pattern, it is characterized in that, described mask plate has at least one mask plate Cutting Road, has any border that does not all exceed described mask plate Cutting Road on one side of at least one pollution detection area of the pattern and described pollution detection area of the pattern in the described mask plate Cutting Road, described pollution detection area of the pattern is for detection of the pollution on the described mask plate, described pollution detection area of the pattern has many lines, and all intersect with the border of described pollution detection area of the pattern at the two ends of single described lines.
Preferably, the shape of described pollution detection area of the pattern is convex polygon or circle, and described lines are that area is less than the rectangle of the area 1/2 in described check pattern zone.
Preferably, the shape of described pollution detection area of the pattern is rectangle, and described lines are that area is less than the rectangle of the area 1/2 in described check pattern zone.
Preferably, any one side of described pollution detection area of the pattern is 1～10 μ m with the bee-line on described mask plate Cutting Road border.
Preferably, the length Q of minor face circle of described pollution detection area of the pattern is more than or equal to 7 times of the minimal design spacing of the target pattern on the described mask plate.
Preferably, 1 μ m≤Q≤10 μ m.
Preferably, the extreme length P of described pollution detection area of the pattern on the direction vertical with described minor face circle is more than or equal to Q.
Preferably, the scope of the extreme length P of described pollution detection area of the pattern on the direction vertical with described minor face circle is Q～5Q.
Preferably, described pollution detection area of the pattern has the many identical and big or small identical lines in interval parallel to each other as the pollution detection pattern, described pollution detection area of the pattern is set to when described lines are transmission region, and the interval region between the described lines is light tight zone; Perhaps when described lines were light tight zone, described interval region was transmission region.
Preferably, the width sum of the width of single line and single interval region is 80%～100% of the minimal design spacing that has of the target pattern on the described mask plate.
Preferably, the width sum of the width of single line and single interval region is 90%～95% of the minimal design spacing that has of the target pattern on the described mask plate.
Preferably, described pollution detection area of the pattern has many first lines that the interval is identical, size is identical and be parallel to each other, identical with many intervals, size is identical and the second lines that intersect with described the first lines that are parallel to each other as the pollution detection pattern, described pollution detection area of the pattern is set to when described the first lines and described the second lines are transmission region, between described the first lines and the interval region between described the second lines be light tight zone; Perhaps when described the first lines and described the second lines were light tight zone, described interval region was transmission region.
Preferably, the width sum of the interval region between the width of single described the first lines and single described the first lines is 80%～100% of the minimal design spacing that has of the target pattern on the described mask plate; The width sum of the interval region between the width of single described the second lines and single described the second lines is 80%～100% of the minimal design spacing that has of described target pattern.
Preferably, the width sum of the interval region between the width of single described the first lines and single described the first lines is 90%～95% of the minimal design spacing that has of the target pattern on the described mask plate; The width sum of the interval region between the width of single described the second lines and single described the second lines is 90%～95% of the minimal design spacing that has of described target pattern.
Preferably, the mask error of described pollution detection area of the pattern strengthens coefficient more than or equal to 3.
Preferably, described pollution detection area of the pattern is distributed in the mask plate Cutting Road of outermost.
Preferably, described mask plate is the phase shift mask plate.
The present invention also provides a kind of method for making mask plate, comprising:
Motherboard is provided, has the shielding layer on transparent base and the described transparent base on the described motherboard; With
The described shielding layer of etching forms the described mask plate with described target pattern, at least one described mask plate Cutting Road and at least one described pollution detection area of the pattern.
Preferably, also comprise: the surface at described shielding layer forms the phase deviation layer, and first this phase deviation layer is carried out etching when the described shielding layer of etching.
Preferably, the material of described phase deviation layer is selected from MoSi, TaSi
2, TiSi
2, metal nitride, iron oxide, inorganic material, Mo, Nb
2O
5, Ti, Ta, CrN, MoO
2, MoN, Cr
2O
2, TiN, ZrN, TiO
2, TaN, Ta
2O
5, SiO
2, NbN, Si
2N
4, Al
2O
2N, Al
2O
2The combination in any of R or above-mentioned substance.
Preferably, the material of described transparent base is selected from silicon dioxide or calcium fluoride.
Preferably, the material of described shielding layer is selected from the combination in any of chromium, chromium nitride, molybdenum, niobium oxide, titanium, tantalum, molybdena, molybdenum nitride, chromium oxide, titanium nitride, zirconium nitride, titania, tantalum nitride, tantalum oxide, silicon dioxide, niobium nitride, silicon nitride, aluminum oxynitride, alkyl aluminium oxide or above-mentioned substance.
The present invention is a kind of method that adopts the aforementioned mask plate to detect pollution of mask plate also, it is characterized in that, pollution detection design transfer in the described pollution detection area of the pattern is shifted pattern to form to wafer, detect described transfer pattern, when described pollution detection pattern and described transfer pattern are not the equal proportion figure, judge that described mask plate is polluted; When described pollution detection pattern and described transfer pattern are the equal proportion figure, judge that then described mask plate is not comtaminated.
According to the present invention, not only can be online and effectively detect pollution on the mask plate, pollute in order in time clean to remove, improve the yields of semiconductor devices, can reduce again and detect the cost that pollutes and shorten the spent time of detecting.
Description of drawings
Following accompanying drawing of the present invention is used for understanding the present invention at this as a part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the synoptic diagram that has the mask plate that pollutes;
Fig. 2 A is the synoptic diagram of the cross-section structure of the mask plate of made in the prior art;
Fig. 2 B is the synoptic diagram that the pollution detection pattern distributes in the mask plate Cutting Road;
Fig. 3 A is the synoptic diagram of the mask plate with pollution detection pattern of an embodiment of the invention;
Fig. 3 B is that the pollution detection pattern of an embodiment of the invention is the synoptic diagram of parallel lines;
Fig. 3 C is that the pollution detection pattern of an embodiment of the invention is poroid synoptic diagram;
Fig. 4 adopts according to the mask plate with pollution detection pattern of an embodiment of the invention process flow diagram for detection of the detection operation that whether has pollution on the mask plate.
Embodiment
In the following description, a large amount of concrete details have been provided in order to more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and implemented.In other example, for fear of obscuring with the present invention, be not described for technical characterictics more well known in the art.
In order thoroughly to understand the present invention, detailed step will be proposed, so that how explanation the present invention makes the mask plate with pollution detection area of the pattern and how to adopt the pollution detection pattern to detect pollution of mask plate in following description.Obviously, execution of the present invention is not limited to the specific details that the technician of semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other embodiments.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.Need to prove that accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only in order to convenient, the purpose of the aid illustration embodiment of the invention clearly.
Shown in Fig. 2 A, the motherboard 201 that will form target pattern and pollution detection area of the pattern is provided, have the layer structure that can form mask plate on it.The shielding layer that layer structure generally comprises transparent base and form at transparent base.Motherboard 201 can be the motherboard of making the phase shift mask plate, but is not limited to the motherboard of making the phase shift mask plate, can be the motherboard of making the mask plate of any type known in those skilled in the art.Only specifically describe the present invention as an example of the motherboard of making the phase shift mask plate example at this.Have base material 202 on the motherboard 201, base material 202 can be transparent base, for example silicon dioxide, calcium fluoride or other materials that is fit to.
If make the phase shift mask plate, motherboard 201 also should include the phase deviation layer 204 that is formed on above the shielding layer 203, phase deviation layer 204 has certain thickness, can make the radiation laser beam that passes phase deviation layer 204, has the phase deviation with respect to the radiation laser beam that passes air.Wherein said radiation laser beam is to be used for forming at semiconductor crystal wafer the radiation laser beam of pattern in photoetching process.This radiation laser beam can be that ultraviolet light and/or expansion comprise other radiation laser beams, for example ion beam, X ray, extreme ultraviolet light, deep UV (ultraviolet light) and light beam with other suitable emittance.The example of the material of phase deviation layer 204 comprises metal silicide, for example MoSi, TaSi
2Or TiSi
2Metal nitride, iron oxide, inorganic material, other materials such as Mo, Nb
2O
5, Ti, Ta, CrN, MoO
2, MoN, Cr
2O
2, TiN, ZrN, TiO
2, TaN, Ta
2O
5, SiO
2, NbN, Si
2N
4, Al
2O
2N, Al
2O
2The combination in any of R or above-mentioned substance.The method that forms phase deviation layer 204 comprises CVD (compound vapour deposition), PVD (physical vapour deposition (PVD)), ald, plating and/or other suitable technique.
The needs that form at motherboard 201 by traditional process are transferred to the pattern (not shown) on the wafer, and namely target pattern generates the pollution detection area of the pattern with pollution detection pattern simultaneously.Traditional process for example comprises apply photoresist on the phase deviation layer, by etching technics successively etching phase deviation layer and shielding layer, peel off remaining photoresist by stripping technology, form the mask plate with target pattern and a plurality of pollution detection area of the pattern.
A plurality of pollution detection area of the pattern are separately positioned within a plurality of mask plate Cutting Roads on the mask plate, be preferably within a plurality of mask plate Cutting Roads that are distributed in outermost, shown in Fig. 2 B, pollution detection area of the pattern 205A is distributed within a plurality of mask plate Cutting Roads 206 of outermost.Certainly can also be distributed within the mask plate Cutting Road of non-outermost, shown in pollution detection area of the pattern 205B.
The area of pollution detection area of the pattern is no more than the area of the mask plate Cutting Road at this pollution detection area of the pattern place.The mask plate Cutting Road is used for forming the wafer Cutting Road at wafer, thereby wafer is divided into each tube core (die), therefore, the mask plate Cutting Road is not the position that target pattern covers, and so just can not cause because being provided with the pollution detection pattern destruction to target pattern.The mask plate Cutting Road can be the zone of printing opacity, also can be lighttight zone.The mask plate Cutting Road can be arbitrary shape, one side but any border that does not all exceed the mask plate Cutting Road of the pollution detection area of the pattern in it.So-called pollution detection area of the pattern refers to surround convex polygon or the circular zone that limits of the area minimum of all pollution detection patterns in this Cutting Road.For example, in a lighttight mask plate Cutting Road, as many parallel to each other and printing opacity lines that length is identical are set as the pollution detection pattern, the pollution detection area of the pattern zone that convex polygon that the outermost border of these parallel lines consists of limits of serving as reasons then.Preferably, any one side of pollution detection area of the pattern is 1～10 μ m with the bee-line on mask plate Cutting Road border.Preferably, the length Q of minor face circle of pollution detection area of the pattern is more than or equal to 7 times of the minimal design spacing (pitch) of the target pattern on the described mask plate, and Q is preferably 1～10 μ m.The extreme length P of pollution detection area of the pattern on the direction vertical with this border be more than or equal to the length Q on this border, is preferably P and is 1 times to 5 times of this boundary length Q.The mask error of pollution detection area of the pattern strengthens coefficient (MEEF) more than or equal to 3, and wherein MEEF is defined as at pattern line-width that wafer the forms partial derivative to the pattern line-width on the corresponding mask plate.The minimal design spacing of target pattern refers to the CD (critical size) of the live width (line) in the target pattern and the CD sum at interval (space).
Fig. 3 A is the schematic top plan view of the described mask plate of a preferred embodiment of the present invention.Mask plate 300 shown in Fig. 3 A has the layer structure identical with the mask plate 201 of Fig. 2.This mask plate 300 has the mask plate Cutting Road that forms many staggered wafer Cutting Roads man-hour for adding at wafer, this synoptic diagram only illustrates parts transversely Cutting Road 301A and the vertical Cutting Road 301B of mask plate, overlapping place shows with transverse cuts road 301A, but the pollution detection pattern that is distributed in the transverse cuts road 301A does not intersect with the pollution detection pattern that is distributed in vertical Cutting Road 301B.Because the mask plate Cutting Road generally is presented as rectangle, thus in the present embodiment take rectangular transverse cuts road 301A and rectangular vertical Cutting Road 301B as example.The zone that transverse cuts road 301A and vertical Cutting Road 301B can be printing opacities also can be lighttight zone.The inventor finds, mask plate when being subject to polluting, the mask plate Cutting Road for the mask plate Cutting Road of the place, the especially outermost that produce at first pollutant for producing at first the place of pollutant.So when being arranged on pollution detection area of the pattern 311 in transverse cuts road 301A and the vertical Cutting Road 301B, especially within the transverse cuts road 301A of outermost and the vertical Cutting Road 301B, can find earlier whether mask plate is contaminated, in order in time clean so that the pollution on the removal mask plate.
The concrete technology requirement of pollution detection area of the pattern 311 is described as an example of transverse cuts road 301A example in the present embodiment.Because with respect to the shape of other pollution detection area of the pattern, rectangular pollution detection area of the pattern regular shape is easier to make, so all describes with rectangular pollution detection area of the pattern 311 in present embodiment and the following examples.But it is pointed out that pollution detection pattern 311 can be other arbitrarily shape, defines according to following design rule.The length in a lateral direction of definition transverse cuts road 301A is X, and the length on the longitudinal direction is Y, X 〉=Y.The extreme length in a lateral direction of pollution detection area of the pattern 311 is T, and extreme length is S on the longitudinal direction.X-T 〉=0 wherein, preferably, 1 μ m≤X-T≤10 μ m; Equally, Y-S 〉=0, preferably, 1 μ m≤Y-S≤10 μ m.Be chosen in this scope, both can make extreme length on the either direction of pollution detection area of the pattern 311 be no more than length on transverse cuts road 301 respective direction, to avoid overlapping with target pattern, destroy target pattern, can make again pollution detection area of the pattern 311 enough large, cover as much as possible transverse cuts road 301A, to avoid omitting the place that pollution is arranged on the mask plate.The pollution detection area of the pattern can be any shape, for example rectangle, square, circle, regular polygon or irregularly shaped.Under the perfect condition, pollution detection area of the pattern 311 is full of whole transverse cuts road 301A, but because the area that pollution detection area of the pattern 311 covers is larger, its required material such as photoresist of using is just more, increased like this cost, therefore, pollution detection area of the pattern 311 need to be set in the rational scope.The minimal design spacing of the target pattern of definition mask plate is d, S 〉=7d, preferably, 1 μ m≤S≤10 μ m, and T 〉=S, be preferably S≤T≤5S, this scope can both can guarantee can not increase too much production cost, can live the area of enough transverse cuts road 301A to detect as soon as possible the pollution on the mask plate by ensuring coverage again.
The pollution detection area of the pattern all has many lines, and single line is area less than the rectangle of the area 1/2 in check pattern zone, and all intersect with the border of pollution detection area of the pattern at every lines two ends.Fig. 3 B and Fig. 3 C have shown respectively the schematic top plan view of two described mask plates of preferred implementation of the present invention.
Shown in Fig. 3 B, pollution detection area of the pattern 311 has many lines 312, and every lines 312 have at least the border of two ends and pollution detection area of the pattern 311 to intersect, and single line 312 is that area is less than the rectangle of the area 1/2 of pollution detection area of the pattern 311.When transverse cuts road 301A was transmission region, lines 312 were light tight zone.Lines 312 are isolated and parallel to each other each other, and spacing is identical, is separated by transmission region 313.Lines 312 and transmission region 313 common formations are polluted the inspection pattern.Lines 312 and the length of transverse cuts road 301A are that the limit of X can become arbitrarily angled, for example 0 degree, 30 degree, 60 degree or 90 degree etc.The width b sum c of the width a of single line 312 and single transmission region 313 be target pattern minimal design spacing d 80%～100%, be preferably be target pattern minimal design spacing d 90%～95%.For example, in the technique of 65nm node, the minimal design spacing d of mask plate 300 is 180nm, and then the value of c should be chosen as 144nm≤c≤180nm, is preferably 162nm≤c≤171nm.Design is in this scope, and the restriction that can either make pollution detection area of the pattern 311 can not be exposed machine is transferred on the wafer, also can avoid omitting any pollutant.And such design size is so that the MEEF that the transfer pattern that the pollution detection design transfer in the pollution detection area of the pattern 311 forms after to the wafer records 〉=3.MEEF is defined as at pattern line-width that wafer the forms partial derivative to the pattern line-width on the corresponding mask plate.MEEF 〉=3 can more easily be found so that the pollutant in the pollution detection area of the pattern 311 is presented on the wafer more obviously.
Optionally, when transverse cuts road 301A was light tight zone, lines 312 were transmission region, and isolated and parallel to each other each other, spacing is identical, separates by light tight regional 313.Design size is with described above consistent.
Pollution detection pattern in the pollution detection area of the pattern 311 can also be implemented as poroid, shown in Fig. 3 C.When transverse cuts road 301A is transmission region, pollution detection area of the pattern 311 comprises many first lines 303 and many second lines 304, the first lines 303 and the second lines 304 are area less than the rectangle of the area 1/2 of pollution detection area of the pattern 311, be light tight zone, the first lines 303 are parallel to each other and spacing is identical, same the second lines 304 are parallel to each other and spacing is identical, and the first lines 303 and the second lines 304 intersect each other, be preferably and intersect vertically, form the interval region 305 of a plurality of printing opacities, interval region 305 is separated from one another with the first lines 303, and is simultaneously also that the second lines 304 are separated from one another.Every the first lines 303 and every the second lines 304 all have at least the border of two ends and pollution detection area of the pattern 311 to intersect.The first lines 303, the second lines 304 and interval region 305 common formation pollution detection patterns.The overlapping part of the first lines 303 and the second lines 304 shows with the first lines 303 parts in the drawings.The first lines 303 and the second lines 304 and the length of transverse cuts road 301A are that the limit of X can become arbitrarily angled, for example 0 degree, 30 degree, 60 degree and 90 degree etc.The width j sum of the width i of single the first lines 303 and single interval region 305 be target pattern minimal design spacing d 80%～100%, be preferably be target pattern minimal design spacing d 90%～95%.Equally, the width l sum of the width k of single the second lines 304 and single interval region 305 be target pattern minimal design spacing d 80%～100%, be preferably be target pattern minimal design spacing d 90%～95%.Design is in this scope, and the restriction that can either make pollution detection pattern in the pollution detection area of the pattern 311 can not be exposed machine is transferred on the wafer, can avoid again omitting any pollutant.And such design size is so that the MEEF that the transfer pattern that the pollution detection pattern in the pollution detection area of the pattern 311 forms after being transferred on the wafer records 〉=3.MEEF 〉=3 can more easily be found so that the pollutant in the pollution detection area of the pattern 311 is presented on the wafer more obviously.
Alternatively, when transverse cuts road 301A was light tight zone, the first lines 303 and the second lines 304 were transmission region, and isolated and parallel to each other each other, spacing is identical, is separated by lighttight interval region 305.Design size is with described above consistent.
According to the present invention, when need to on the mask plate carry out pollution detection the time, pollution detection design transfer in the pollution detection area of the pattern can be shifted pattern to form to wafer, judge by the transfer area of the pattern that detects on the wafer whether mask plate has had the pollution defective.When the transfer pattern on the wafer and pollution detection pattern are not the figure of equal proportion, can judge that then this mask plate has been subjected to pollution; When the pollution detection pattern is the equal proportion figure with the transfer pattern, judge that then described mask plate is not comtaminated.Can also all have the pollution detection pattern in identical patterns zone on the mask plate by shifting, then contrast the area of the pattern at these several places on the wafer, can judge that mask plate has been subjected to pollution if find when different in the area of the pattern at these several places.
Fig. 4 shows the schematic flow sheet that detects pollution of mask plate according to the aforesaid mask plate with pollution detection area of the pattern of the employing of the embodiment of one aspect of the invention.In step 401, provide the mask plate with pollution detection area of the pattern.In step 402, the pollution detection design transfer in the pollution detection area of the pattern to wafer, is formed the transfer pattern on the wafer.In step 403, detect the transfer pattern on the wafer, whether contaminated to determine mask plate.
Detect the method for pollution of mask plate according to the present invention, convenient feasible, almost be to carry out at any time pollution of mask plate to detect, because can in commercial production, use mask plate to carry out just can carrying out the detection of pollution of mask plate in the design transfer, can detect online.Detect the means of pollution of mask plate according to the present invention, cheap, because do not need to use the mask plate detection system of traditional costliness, and because the price of wafer is significantly less than the price of mask plate detection system, so that production cost descends, product has more competitive power.And take full advantage of the blank parts of mask plate, can when making mask plate, produce simultaneously according to pollution detection area of the pattern of the present invention, do not increase unnecessary making step, do not use unnecessary material yet, namely do not have to bring extra burden for manufacturing process.
The mask plate that detects the pollution detection area of the pattern that has according to from the above mentioned embodiment manufacturing can be applicable in the multiple integrated circuit (IC).For example be memory circuitry according to IC of the present invention, such as random access memory (RAM), dynamic ram (DRAM), synchronous dram (SDRAM), static RAM (SRAM) (SRAM) or ROM (read-only memory) (ROM) etc.Can also be logical device according to IC of the present invention, such as programmable logic array (PLA), special IC (ASIC), combination type DRAM logical integrated circuit (buried type DRAM) or any other circuit devcies.IC chip according to the present invention can be used for for example consumer electronic products, in the various electronic products such as personal computer, portable computer, game machine, cellular phone, personal digital assistant, video camera, digital camera, mobile phone, especially in the radio frequency products.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just is used for for example and the purpose of explanation, but not is intended to the present invention is limited in the described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to above-described embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (23)
1. mask plate that is used for semiconductor technology, described mask plate has target pattern, it is characterized in that, described mask plate has at least one mask plate Cutting Road, has any border that does not all exceed described mask plate Cutting Road on one side of at least one pollution detection area of the pattern and described pollution detection area of the pattern in the described mask plate Cutting Road, described pollution detection area of the pattern is for detection of the pollution on the described mask plate, described pollution detection area of the pattern has many lines, all intersect with the border of described pollution detection area of the pattern at the two ends of every described lines, wherein, described mask plate Cutting Road is used for forming the wafer Cutting Road wafer being divided into each tube core at wafer, and described pollution detection area of the pattern refers to surround the convex polygon of area minimum of interior all the pollution detection patterns of mask plate Cutting Road at described pollution detection area of the pattern place or the zone that circle limits.
2. mask plate as claimed in claim 1 is characterized in that, the shape of described pollution detection area of the pattern is convex polygon or circle, and described lines are that area is less than the rectangle of the area 1/2 in described check pattern zone.
3. mask plate as claimed in claim 1 is characterized in that, the shape of described pollution detection area of the pattern is rectangle, and described lines are that area is less than the rectangle of the area 1/2 in described check pattern zone.
4. mask plate as claimed in claim 2 or claim 3 is characterized in that, described pollution detection area of the pattern is 1～10 μ m with the bee-line on described mask plate Cutting Road border arbitrarily on one side.
5. mask plate as claimed in claim 2 or claim 3, it is characterized in that, the length Q of minor face circle of described pollution detection area of the pattern is more than or equal to 7 times of the minimal design spacing of the target pattern on the described mask plate, wherein, the minimal design spacing of described target pattern refers to the critical size of the live width in the described target pattern and the critical size sum at interval.
6. mask plate as claimed in claim 5 is characterized in that, 1 μ m≤Q≤10 μ m.
7. mask plate as described in claim 5 is characterized in that the extreme length P of described pollution detection area of the pattern on the direction vertical with described minor face circle is more than or equal to Q.
8. mask plate as described in claim 7 is characterized in that the scope of the extreme length P of described pollution detection area of the pattern on the direction vertical with described minor face circle is Q～5Q.
9. mask plate as claimed in claim 2 or claim 3, it is characterized in that, described pollution detection area of the pattern has the many identical and big or small identical lines in interval parallel to each other as the pollution detection pattern, described pollution detection area of the pattern is set to when described lines are transmission region, and the interval region between the described lines is light tight zone; Perhaps when described lines were light tight zone, described interval region was transmission region.
10. mask plate as claimed in claim 9 is characterized in that, the width sum of the width of single line and single interval region is 80%～100% of the minimal design spacing that has of the target pattern on the described mask plate.
11. mask plate as claimed in claim 9 is characterized in that, the width sum of the width of single line and single interval region is 90%～95% of the minimal design spacing that has of the target pattern on the described mask plate.
12. mask plate as claimed in claim 2 or claim 3, it is characterized in that, described pollution detection area of the pattern has many first lines that the interval is identical, size is identical and be parallel to each other, identical with many intervals, size is identical and the second lines that intersect with described the first lines that are parallel to each other as the pollution detection pattern, described pollution detection area of the pattern is set to when described the first lines and described the second lines are transmission region, between described the first lines and the interval region between described the second lines be light tight zone; Perhaps when described the first lines and described the second lines were light tight zone, described interval region was transmission region.
13. mask plate as claimed in claim 12, it is characterized in that the width sum of the interval region between the width of single described the first lines and single described the first lines is 80%～100% of the minimal design spacing that has of the target pattern on the described mask plate; The width sum of the interval region between the width of single described the second lines and single described the second lines is 80%～100% of the minimal design spacing that has of described target pattern.
14. mask plate as claimed in claim 12 is characterized in that, the width sum of the interval region between the width of single described the first lines and single described the first lines is 90%～95% of the minimal design spacing that has of the target pattern on the described mask plate; The width sum of the interval region between the width of single described the second lines and single described the second lines is 90%～95% of the minimal design spacing that has of described target pattern.
15. mask plate as claimed in claim 1 is characterized in that, the mask error of described pollution detection area of the pattern strengthens coefficient more than or equal to 3.
16. mask plate as claimed in claim 1 is characterized in that, described pollution detection area of the pattern is distributed in the mask plate Cutting Road of outermost.
17. mask plate as claimed in claim 1 is characterized in that, described mask plate is the phase shift mask plate.
18. one kind is used for the method make mask plate as claimed in claim 1, comprises:
Motherboard is provided, has the shielding layer on transparent base and the described transparent base on the described motherboard; With
The described shielding layer of etching forms the described mask plate with described target pattern, at least one described mask plate Cutting Road and at least one described pollution detection area of the pattern.
19. method as claimed in claim 18 also comprises:
Surface at described shielding layer forms the phase deviation layer, and first this phase deviation layer is carried out etching when the described shielding layer of etching.
20. method as claimed in claim 19 is characterized in that, the material of described phase deviation layer is selected from MoSi, TaSi
2, TiSi
2, metal nitride, iron oxide, inorganic material, Mo, Nb
2O
5, Ti, Ta, CrN, MoO
2, MoN, Cr
2O
2, TiN, ZrN, TiO
2, TaN, Ta
2O
5, SiO
2, NbN, Si
2N
4, Al
2O
2N, Al
2O
2The combination in any of R or above-mentioned substance.
21. method as claimed in claim 18 is characterized in that, the material of described transparent base is selected from silicon dioxide or calcium fluoride.
22. method as claimed in claim 18, it is characterized in that the material of described shielding layer is selected from the combination in any of chromium, chromium nitride, molybdenum, niobium oxide, titanium, tantalum, molybdena, molybdenum nitride, chromium oxide, titanium nitride, zirconium nitride, titania, tantalum nitride, tantalum oxide, silicon dioxide, niobium nitride, silicon nitride, aluminum oxynitride, alkyl aluminium oxide or above-mentioned substance.
23. method that adopts mask plate as claimed in claim 1 to detect pollution of mask plate, it is characterized in that, pollution detection design transfer in the described pollution detection area of the pattern is shifted pattern to form to wafer, detect described transfer pattern, when described pollution detection pattern and described transfer pattern are not the equal proportion figure, judge that described mask plate is polluted; When described pollution detection pattern and described transfer pattern are the equal proportion figure, judge that then described mask plate is not comtaminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010182691 CN102262349B (en) | 2010-05-24 | 2010-05-24 | Mask plate for semiconductor technique |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010182691 CN102262349B (en) | 2010-05-24 | 2010-05-24 | Mask plate for semiconductor technique |
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| Publication Number | Publication Date |
|---|---|
| CN102262349A CN102262349A (en) | 2011-11-30 |
| CN102262349B true CN102262349B (en) | 2013-04-10 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104914664B (en) * | 2014-03-13 | 2019-12-17 | 中芯国际集成电路制造(上海)有限公司 | photomask detection structure and detection method |
| CN104407498A (en) * | 2014-11-26 | 2015-03-11 | 上海华力微电子有限公司 | Method for treating photomask contamination particle |
| CN108459463A (en) * | 2017-02-22 | 2018-08-28 | 中芯国际集成电路制造(上海)有限公司 | A kind of light shield and preparation method thereof |
| CN110824851B (en) * | 2018-08-13 | 2021-06-29 | 台湾积体电路制造股份有限公司 | Method for detecting cleanliness of lithography equipment and reflective photomask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020076623A1 (en) * | 2000-12-18 | 2002-06-20 | Mitsubishi Denki Kabushiki Kaisha | Photo mask to be used for photolithography, method of inspecting pattern defect, and method of manufacturing semiconductor device through use of the mask |
| US20040137339A1 (en) * | 2002-10-29 | 2004-07-15 | Dupont Photomasks, Inc. | Photomask assembly and method for protecting the same from contaminants generated during a lithography process |
| CN101009202A (en) * | 2006-01-27 | 2007-08-01 | 台湾积体电路制造股份有限公司 | Apparatus and method for reducing impurities in a process environment |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020076623A1 (en) * | 2000-12-18 | 2002-06-20 | Mitsubishi Denki Kabushiki Kaisha | Photo mask to be used for photolithography, method of inspecting pattern defect, and method of manufacturing semiconductor device through use of the mask |
| US20040137339A1 (en) * | 2002-10-29 | 2004-07-15 | Dupont Photomasks, Inc. | Photomask assembly and method for protecting the same from contaminants generated during a lithography process |
| CN101009202A (en) * | 2006-01-27 | 2007-08-01 | 台湾积体电路制造股份有限公司 | Apparatus and method for reducing impurities in a process environment |
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