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CN102255129A - Planar superconductive microstrip line resonator - Google Patents

Planar superconductive microstrip line resonator Download PDF

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CN102255129A
CN102255129A CN 201110124625 CN201110124625A CN102255129A CN 102255129 A CN102255129 A CN 102255129A CN 201110124625 CN201110124625 CN 201110124625 CN 201110124625 A CN201110124625 A CN 201110124625A CN 102255129 A CN102255129 A CN 102255129A
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superconducting
resonator
microstrip line
frequency
planar
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张晓平
应志军
魏斌
曹必松
郭旭波
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Tsinghua University
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Abstract

本发明涉及一种平面超导微带线谐振器,属于微波技术领域,该谐振器包括上层超导薄膜、下层超导薄膜和位于两层超导薄膜之间的介质基片,其特征在于,所述上层超导薄膜为用一条连续完整的超导条带线由内往外沿顺时针或逆时针螺旋环绕二至四圈构成。本发明可以显著推高寄生频率,将二次谐频推高到约三倍于基频频率的位置。该平面超导微带线谐振器另外一个优点是适用于制作相对带宽从0.5%到20%非常宽范围的超导滤波器。

The invention relates to a planar superconducting microstrip line resonator, which belongs to the field of microwave technology. The resonator includes an upper superconducting thin film, a lower superconducting thin film and a dielectric substrate between the two superconducting thin films. It is characterized in that: The upper superconducting thin film is composed of a continuous and complete superconducting strip line spirally wound clockwise or counterclockwise for two to four turns from the inside to the outside. The present invention can significantly push up the spurious frequency, and push up the second harmonic frequency to about three times of the fundamental frequency. Another advantage of the planar superconducting microstrip line resonator is that it is suitable for making superconducting filters with a very wide range of relative bandwidth from 0.5% to 20%.

Description

一种平面超导微带线谐振器A Planar Superconducting Microstrip Resonator

技术领域 technical field

本发明属于微波技术领域,特别涉及平面超导微带线谐振器。The invention belongs to the field of microwave technology, in particular to a planar superconducting microstrip line resonator.

背景技术 Background technique

滤波器具有选频功能,即通过所需频率的信号,而抑制不需要频率的信号,是微波工程技术领域一种十分重要的微波元件,被广泛应用于移动通信、卫星通信、雷达及其它微波通信等领域。由于超导材料在微波波段的电导率相比常规金属材料高两到三个数量级,因而被用于制作性能更加优异的滤波器。The filter has the function of frequency selection, that is, the signal of the required frequency is passed, and the signal of the unnecessary frequency is suppressed. It is a very important microwave component in the field of microwave engineering technology and is widely used in mobile communications, satellite communications, radar and other microwaves. communications and other fields. Since the conductivity of superconducting materials in the microwave band is two to three orders of magnitude higher than that of conventional metal materials, they are used to make filters with better performance.

由微带线谐振器组成的耦合谐振滤波器是微波滤波器的一种十分重要的实现形式。平面超导微带线的剖面如图1所示,由上层超导薄膜11、下层超导薄膜12和位于两层超导薄膜之间的介质基片13构成。The coupled resonant filter composed of microstrip line resonators is a very important realization form of microwave filter. The cross section of the planar superconducting microstrip line is shown in Fig. 1, which is composed of an upper superconducting thin film 11, a lower superconducting thin film 12 and a dielectric substrate 13 between the two superconducting thin films.

上层超导薄膜11通常由一条两端开路的直线型条带线构成,长度约为谐振频率在微带线介质基片上对应波长的一半。由于微带线分布参数电路频率响应的周期性,这种半波长直线型微带线谐振器在二倍频、三倍频等基频频率的整数倍处又产生二次谐频、三次谐频等寄生谐振频率,从而使由半波长微带线谐振器组成的滤波器在离开设计通带一定距离处又产生寄生通带。滤波器在寄生通带处的抑制度很低,导致不需要的频率信号通过滤波器,从而影响滤波器的性能。特别是当滤波器通带位于移动通信、有线电视等各种微波通信较为密集的电磁频谱密集区域时,对寄生通带特性的要求更加严格,需要滤波器在通带以外很宽的阻带范围内具有良好的抑制度。The upper superconducting thin film 11 is usually composed of a straight strip line with both ends open, and the length is about half of the corresponding wavelength of the resonant frequency on the microstrip line dielectric substrate. Due to the periodicity of the frequency response of the distribution parameter circuit of the microstrip line, this half-wavelength linear microstrip line resonator generates the second harmonic frequency and the third harmonic frequency at integer multiples of the fundamental frequency such as double frequency and triple frequency. Wait for the parasitic resonant frequency, so that the filter composed of half-wavelength microstrip line resonators produces a parasitic passband at a certain distance from the design passband. The rejection of the filter at the spurious passband is very low, causing unwanted frequency signals to pass through the filter, thereby affecting the performance of the filter. Especially when the passband of the filter is located in the dense electromagnetic spectrum area where various microwave communications such as mobile communication and cable TV are relatively dense, the requirements for the characteristics of the parasitic passband are more stringent, and the filter needs a wide stopband range outside the passband Has a good degree of inhibition.

近年来,研究人员提出了多种谐振器结构用于提高滤波器的寄生通带特性。采用一端短路的1/4波长微带线谐振器结构可以使寄生频率仅出现在基频频率的奇数倍处(二次谐频位于基频频率的3倍处,三次谐频位于基频频率的5倍处),从而改善滤波器的寄生通道特性。然而,1/4波长微带线短路端的接地要求将增加制备工艺的复杂度,在较脆的基片(如氧化镁MgO、铝酸镧LaAlO3)上实现接地也存在一定的困难(Zhou J,Lancaster M J,Huang F,IEEE Trans.Applied Supercond.,14(2004),28)。采用锯齿状耦合微带线结构(Kuo J,Hsu W,Huang W,IEEE Microw.Wireless Compon.Lett.,12(2002),383)和基片悬置结构(KuoJ,Jiang M,Chang H,IEEE Trans.Microw.Theory Tech.,52(2004),83),通过平衡耦合微带线中的奇偶模相速度从而可达到抑制倍频和寄生通带响应的目的,然而这两种方法对制备工艺的要求较高。采用阶跃阻抗谐振器结构(Jin S,Wei B,Zhang X,et al,Microwave opt.tech.lett.,49(2007),2097)也可将滤波器的寄生通带向高频移动,然而阶跃阻抗结构通常适用于较高频段,在低频段时面临谐振器尺寸大、难以实现小型化的困难。In recent years, researchers have proposed a variety of resonator structures to improve the parasitic passband characteristics of filters. Using a 1/4 wavelength microstrip line resonator structure short-circuited at one end can make the spurious frequency appear only at odd multiples of the fundamental frequency (the second harmonic frequency is located at three times the fundamental frequency, and the third harmonic frequency is located at three times the fundamental frequency. 5 times), thereby improving the parasitic channel characteristics of the filter. However, the requirement for grounding at the short-circuit end of the 1/4 wavelength microstrip line will increase the complexity of the fabrication process, and it is also difficult to achieve grounding on brittle substrates (such as magnesium oxide MgO, lanthanum aluminate LaAlO 3 ) (Zhou J , Lancaster M J, Huang F, IEEE Trans. Applied Supercond., 14(2004), 28). Using zigzag coupled microstrip line structure (Kuo J, Hsu W, Huang W, IEEE Microw.Wireless Compon. Lett., 12(2002), 383) and substrate suspension structure (KuoJ, Jiang M, Chang H, IEEE Trans.Microw.Theory Tech., 52(2004), 83), the purpose of suppressing frequency multiplication and spurious passband response can be achieved by balancing the odd and even mode phase velocities in the coupled microstrip line, but these two methods have great influence on the preparation process higher requirements. Using a step impedance resonator structure (Jin S, Wei B, Zhang X, et al, Microwave opt.tech.lett., 49(2007), 2097) can also move the parasitic passband of the filter to high frequencies, however The step impedance structure is generally suitable for higher frequency bands, but at low frequency bands, it faces the difficulty of large resonator size and difficulty in miniaturization.

已有的结构最简单的半波长微带线谐振器是直线型谐振器21,如图2(a)所示。该谐振器所用基片材料为氧化镁MgO,厚度为0.5mm,介电常数εr为9.71。微带线线宽为0.08mm,长度为96.04mm。使用电磁仿真软件Sonnet对该直线型谐振器进行仿真可知基次谐振频率(基频)22为640.85MHz,二次谐振频率(二次频)23频为1282.1MHz,三次谐振频率(三次频)24为1924MHz,如图2(b)所示。二次谐振频率和三次谐振频率分别约为基次谐振频率的2倍和3倍。当该谐振器在基频处谐振时,电流随直线型谐振器长度分布示意图如图2(c)所示,直线型谐振器微带线上的电流方向一致,同时流向微带线一端,或者同时流向微带线的另外一端。直线型谐振器中部电流大,两端电流小,端口电流为零,呈半个正弦周期分布;当直线型谐振器在二次谐频处谐振时,电流随直线型谐振器长度分布示意图如图2(d)所示,直线型谐振器左右两半电流方向相反,两端口和中间电流为零,距两端1/4总微带线长度处电流最大,呈一个正弦周期分布。The existing half-wavelength microstrip line resonator with the simplest structure is a linear resonator 21, as shown in FIG. 2(a). The substrate material used in the resonator is magnesium oxide MgO with a thickness of 0.5 mm and a dielectric constant ε r of 9.71. The width of the microstrip line is 0.08mm, and the length is 96.04mm. Using the electromagnetic simulation software Sonnet to simulate the linear resonator, it can be seen that the fundamental resonance frequency (fundamental frequency) 22 is 640.85MHz, the second resonance frequency (secondary frequency) 23 is 1282.1MHz, and the third resonance frequency (third frequency) 24 It is 1924MHz, as shown in Fig. 2(b). The second resonant frequency and the third resonant frequency are about 2 times and 3 times of the fundamental resonant frequency, respectively. When the resonator resonates at the fundamental frequency, the schematic diagram of the distribution of the current along the length of the linear resonator is shown in Figure 2(c). At the same time, it flows to the other end of the microstrip line. The current in the middle of the linear resonator is large, the current at both ends is small, the port current is zero, and it is distributed in half a sine cycle; when the linear resonator resonates at the second harmonic frequency, the schematic diagram of the current distribution with the length of the linear resonator is shown in the figure As shown in 2(d), the current direction of the left and right halves of the linear resonator is opposite, the two ports and the middle current are zero, and the current is the largest at 1/4 of the total microstrip line length from both ends, showing a sinusoidal periodic distribution.

发明内容 Contents of the invention

本发明的目的是克服已有技术的不足之处,提出了一种平面超导微带线谐振器,可以显著推高寄生频率,将二次谐频推高到约三倍于基频频率的位置。该平面超导微带线谐振器另外一个优点是适用于制作相对带宽从0.5%到20%非常宽范围的超导滤波器。The purpose of the present invention is to overcome the deficiencies of the prior art, and proposes a planar superconducting microstrip line resonator, which can significantly push up the spurious frequency, and push the second harmonic frequency up to about three times the fundamental frequency Location. Another advantage of the planar superconducting microstrip line resonator is that it is suitable for making superconducting filters with a very wide range of relative bandwidth from 0.5% to 20%.

为了达到上述发明目的,本发明提出了一种平面超导微带线谐振器,包括上层超导薄膜、下层超导薄膜和位于两层超导薄膜之间的介质基片,其特征在于,所述上层超导薄膜为用一条连续完整的超导条带线由内往外沿顺时针或逆时针螺旋环绕二至四圈构成。In order to achieve the above-mentioned purpose of the invention, the present invention proposes a planar superconducting microstrip resonator, comprising an upper superconducting film, a lower superconducting film and a dielectric substrate between the two superconducting films, characterized in that the The upper layer of superconducting thin film is composed of a continuous and complete superconducting strip line spirally wound clockwise or counterclockwise for two to four turns from the inside to the outside.

上述条带线可以是由直线型条带段相连接构成,也可以由弧线型条带段连接构成。The above-mentioned strip lines may be formed by connecting straight strip segments, or may be formed by connecting arc-shaped strip segments.

上述条带线的线宽可优选0.01mm至0.50mm。The line width of the above-mentioned strip lines may preferably be 0.01 mm to 0.50 mm.

上述条带线的线间距离离可优选0.01mm至0.10mm。The line-to-line distance of the above strip lines may preferably be 0.01 mm to 0.10 mm.

本发明的特点及效果Features and effects of the present invention

本发明利用半波长微带线谐振器电流分布的特点,提出了一种平面超导微带线谐振器,可以显著推高寄生频率,将二次谐频推高到约三倍于基频频率的位置。The invention utilizes the characteristics of the current distribution of the half-wavelength microstrip line resonator to propose a planar superconducting microstrip line resonator, which can significantly push up the spurious frequency and push the second harmonic frequency to about three times the fundamental frequency s position.

该平面超导微带线谐振器另外一个优点是由于该谐振器的单螺旋结构,其在基频处的电磁场相对比较发散,因而可以与相邻谐振器产生较大耦合,从而实现宽带滤波器的设计。通过调整相邻谐振器的距离来改变耦合系数,制作相对带宽从0.5%到20%非常宽范围的超导滤波器。Another advantage of the planar superconducting microstrip line resonator is that due to the single helical structure of the resonator, the electromagnetic field at the fundamental frequency is relatively divergent, so it can generate a large coupling with adjacent resonators, thereby realizing a broadband filter the design of. By adjusting the distance between adjacent resonators to change the coupling coefficient, a superconducting filter with a very wide range of relative bandwidth from 0.5% to 20% is fabricated.

附图说明 Description of drawings

图1为平面超导微带线的截面图。Figure 1 is a cross-sectional view of a planar superconducting microstrip line.

图2a为半波长直线型微带线谐振器电路示意图。Fig. 2a is a schematic diagram of a half-wavelength linear microstrip line resonator circuit.

图2b为半波长直线型微带线谐振器的仿真频率响应特性曲线。Fig. 2b is a simulation frequency response characteristic curve of a half-wavelength linear microstrip line resonator.

图2c为半波长直线型微带线谐振器在基频处的电流分布示意图。Fig. 2c is a schematic diagram of the current distribution at the fundamental frequency of the half-wavelength linear microstrip line resonator.

图2d为半波长直线型微带线谐振器在二次谐频处的电流分布示意图。Fig. 2d is a schematic diagram of the current distribution at the second harmonic frequency of the half-wavelength linear microstrip line resonator.

图3a为本发明提出的一种平面超导微带线谐振器的第一种实施例中上层超导薄膜结构示意图。Fig. 3a is a schematic diagram of the structure of the upper superconducting thin film in the first embodiment of a planar superconducting microstrip line resonator proposed by the present invention.

图3b为本发明提出的一种平面超导微带线谐振器的第一种实施例结构的仿真频率响应特性曲线。Fig. 3b is a simulated frequency response characteristic curve of the structure of the first embodiment of a planar superconducting microstrip line resonator proposed by the present invention.

图4a为本发明提出的一种平面超导微带线谐振器的第二种实施例中上层超导薄膜结构示意图。Fig. 4a is a schematic diagram of the structure of the upper superconducting thin film in the second embodiment of a planar superconducting microstrip line resonator proposed by the present invention.

图4b为本发明提出的一种平面超导微带线谐振器的第二种实施例结构的仿真频率响应特性曲线。Fig. 4b is a simulated frequency response characteristic curve of the structure of the second embodiment of a planar superconducting microstrip line resonator proposed by the present invention.

图5a为本发明提出的一种平面超导微带线谐振器的第三种实施例中上层超导薄膜结构示意图。Fig. 5a is a schematic diagram of the structure of the upper superconducting thin film in the third embodiment of a planar superconducting microstrip line resonator proposed by the present invention.

图5b为本发明提出的一种平面超导微带线谐振器的第三种实施例结构的仿真频率响应特性曲线。Fig. 5b is a simulated frequency response characteristic curve of the structure of the third embodiment of a planar superconducting microstrip line resonator proposed by the present invention.

图6为本发明提出的一种平面超导微带线谐振器的上层超导薄膜其它几种变形的实现结构。Fig. 6 is the implementation structure of several other variants of the upper superconducting film of a planar superconducting microstrip line resonator proposed by the present invention.

图6a为三圈矩形环带上层超导薄膜结构。Figure 6a shows the structure of the superconducting thin film on the upper layer of the three-circle rectangular ring belt.

图6b为两圈矩形环带上层超导薄膜结构。Figure 6b shows the structure of the superconducting thin film on the upper layer of the two-circle rectangular ring.

图6c为三圈正方形环带上层超导薄膜结构。Figure 6c shows the structure of the upper superconducting thin film with three circles of square rings.

图6d为四圈正方形环带上层超导薄膜结构。Figure 6d shows the structure of the superconducting thin film on the upper layer of the four-circle square ring.

图6e为三圈胖十字形环带上层超导薄膜结构。Figure 6e shows the structure of the superconducting thin film on the upper layer of the three-circle fat cross-shaped annulus.

图6f为三圈拱矩形环带上层超导薄膜结构。Figure 6f shows the structure of the superconducting thin film on the upper layer of the three-circle arched rectangular ring.

图6g为三圈半圆形环带上层超导薄膜结构。Figure 6g shows the structure of the upper superconducting thin film with three semicircular rings.

图6h为三圈圆形环带上层超导薄膜结构。Figure 6h shows the structure of the superconducting thin film on the upper layer of the three-circle circular annulus.

具体实施方式 Detailed ways

下面结合具体的实施例对本发明做进一步的详细描述。The present invention will be further described in detail below in conjunction with specific embodiments.

第一实施例first embodiment

参照图1,利用一条完整的微带线,该微带线为平面超导微带线,包括上层超导薄膜11、下层超导薄膜12和位于两层超导薄膜之间的介质基片13。本实施例的上层超导薄膜11结构如图3(a)所示,是一条两端开路的超导条带线,条带线从内往外沿逆时针方向环绕三圈31构成。本实施例中,上、下层超导薄膜采用高温超导薄膜,介质基片13采用氧化镁MgO材料,厚度为0.50mm,介电常数是9.71。With reference to Fig. 1, utilize a complete microstrip line, this microstrip line is the planar superconducting microstrip line, comprises the upper layer superconducting film 11, the lower layer superconducting film 12 and the dielectric substrate 13 between two layers of superconducting films . The structure of the upper superconducting thin film 11 of this embodiment is shown in FIG. 3( a ), which is a superconducting strip line with both ends open, and the strip line is formed by three circles 31 in a counterclockwise direction from the inside to the outside. In this embodiment, the upper and lower superconducting films are made of high-temperature superconducting films, and the dielectric substrate 13 is made of magnesium oxide MgO with a thickness of 0.50 mm and a dielectric constant of 9.71.

图3(a)是本实施例给定基频频率为427.1MHz,设计的一个平面超导微带线谐振器结构。该结构中的螺圈均为矩形螺圈31,最外层螺圈的外轮廓长为2.32mm,宽为14.4mm。条带线总长度为96.04mm,线宽为0.08mm,相邻螺圈等间距且间距为0.04mm。Fig. 3(a) is a planar superconducting microstrip line resonator structure designed in this embodiment given that the fundamental frequency is 427.1MHz. The coils in this structure are all rectangular coils 31, and the outer contour of the outermost coil is 2.32 mm long and 14.4 mm wide. The total length of the strip line is 96.04 mm, the line width is 0.08 mm, and the adjacent spiral coils are equally spaced and the interval is 0.04 mm.

图3(b)为本实施例经电磁仿真软件Sonnet仿真得到的频率响应特性曲线,其基频谐振频率32为427.1MHz,二次谐频频率33为1220.65MHz,三次谐频频率34为2016.5MHz,该谐振器二次谐频频率为基频频率的2.87倍,与直线型微带线谐振器二次谐频频率约为基频频率的2倍相比,显著提高了寄生频率响应特性。Fig. 3 (b) is the frequency response characteristic curve obtained by electromagnetic simulation software Sonnet simulation of the present embodiment, its fundamental frequency resonant frequency 32 is 427.1MHz, the second harmonic frequency 33 is 1220.65MHz, and the third harmonic frequency 34 is 2016.5MHz , the second harmonic frequency of the resonator is 2.87 times of the fundamental frequency, which significantly improves the spurious frequency response characteristics compared with the linear microstrip line resonator whose second harmonic frequency is about twice the fundamental frequency.

从上述实施例可以看出,本发明的谐振器结构提高谐振器寄生频率特性的原因是:当谐振器在基频处谐振时,相邻微带线上的电流方向相同,会产生较大的自电感,从而导致谐振器的基频谐振频率降低,使得图3(a)所示谐振器的基频频率仅为427.1MHz,远低于图2(a)直线型谐振器的基频频率640.85MHz。当谐振器在二次谐频处谐振时,相邻微带线上的电流方向不完全相同,自电感不大,对谐振器的二次谐频的影响不大,图3(a)所示谐振器的二次谐频仿真结果为1220.65MHz,与图2(a)直线型谐振器的二次谐频1282.1MHz相差不大。综合以上原因,使得本发明谐振器二次谐频频率与基频频率之比远大于直线型谐振器,从而改善了谐振器的寄生频率响应特性。It can be seen from the above embodiments that the reason why the resonator structure of the present invention improves the spurious frequency characteristics of the resonator is that when the resonator resonates at the fundamental frequency, the current directions on adjacent microstrip lines are the same, which will generate a larger Self-inductance, which leads to the reduction of the fundamental resonant frequency of the resonator, makes the fundamental frequency of the resonator shown in Figure 3(a) only 427.1MHz, which is much lower than the fundamental frequency of the linear resonator in Figure 2(a) 640.85 MHz. When the resonator resonates at the second harmonic frequency, the current directions on adjacent microstrip lines are not exactly the same, and the self-inductance is small, which has little influence on the second harmonic frequency of the resonator, as shown in Figure 3(a) The second harmonic frequency simulation result of the resonator is 1220.65MHz, which is not much different from the second harmonic frequency 1282.1MHz of the linear resonator in Fig. 2(a). Based on the above reasons, the ratio of the second harmonic frequency to the fundamental frequency of the resonator of the present invention is much larger than that of the linear resonator, thereby improving the spurious frequency response characteristics of the resonator.

第二实施例second embodiment

参照图1,利用一条完整的微带线,该微带线为平面超导微带线,包括上层超导薄膜11、下层超导薄膜12和位于两层超导薄膜之间的介质基片13。本实施例的上层超导薄膜11结构如图4(a)所示,是一条两端开路的超导条带线,条带线从内往外沿顺时针方向环绕两圈41构成。本实施例中,上、下层超导薄膜采用高温超导薄膜,介质基片13采用氧化镁MgO材料,厚度为0.50mm,介电常数是9.71。With reference to Fig. 1, utilize a complete microstrip line, this microstrip line is the planar superconducting microstrip line, comprises the upper layer superconducting film 11, the lower layer superconducting film 12 and the dielectric substrate 13 between two layers of superconducting films . The structure of the upper superconducting thin film 11 of this embodiment is shown in FIG. 4( a ), which is a superconducting strip line with open circuits at both ends, and the strip line wraps around 41 twice in a clockwise direction from the inside to the outside. In this embodiment, the upper and lower superconducting films are made of high-temperature superconducting films, and the dielectric substrate 13 is made of magnesium oxide MgO with a thickness of 0.50 mm and a dielectric constant of 9.71.

图4(a)是本实施例给定基频频率为1180MHz,设计的一个平面超导微带线谐振器结构。该结构中的螺圈均为正方形螺圈41,最外层螺圈的外轮廓长为5mm,宽为5mm。条带线总长度为36.6mm,线宽为0.2mm,相邻螺圈等间距且间距为0.04mm。Fig. 4(a) is a planar superconducting microstrip line resonator structure designed in this embodiment given that the fundamental frequency is 1180MHz. The coils in this structure are all square coils 41, and the outer contour of the outermost coil is 5 mm long and 5 mm wide. The total length of the strip line is 36.6 mm, the line width is 0.2 mm, and the adjacent coils are equally spaced with a pitch of 0.04 mm.

图4(b)为本实施例经电磁仿真软件Sonnet仿真得到的频率响应特性曲线,其基频谐振频率42为1180MHz,二次谐频频率43为3553MHz,为基频频率的3.01倍。Fig. 4 (b) is the frequency response characteristic curve obtained by the electromagnetic simulation software Sonnet simulation of this embodiment, its fundamental frequency resonant frequency 42 is 1180MHz, and the second harmonic frequency 43 is 3553MHz, which is 3.01 times of the fundamental frequency.

第三实施例third embodiment

参照图1,利用一条完整的微带线,该微带线为平面超导微带线,包括上层超导薄膜11、下层超导薄膜12和位于两层超导薄膜之间的介质基片13。本实施例的上层超导薄膜11结构如图5(a)所示,是一条两端开路的超导条带线,条带线从内往外沿顺时针方向环绕四圈51构成。本实施例中,上、下层超导薄膜采用高温超导薄膜,介质基片13采用氧化镁MgO材料,厚度为0.50mm,介电常数是9.71。With reference to Fig. 1, utilize a complete microstrip line, this microstrip line is the planar superconducting microstrip line, comprises the upper layer superconducting film 11, the lower layer superconducting film 12 and the dielectric substrate 13 between two layers of superconducting films . The structure of the upper superconducting thin film 11 of this embodiment is shown in FIG. 5( a ), which is a superconducting strip line with open circuits at both ends, and the strip line is composed of four circles 51 in a clockwise direction from inside to outside. In this embodiment, the upper and lower superconducting films are made of high-temperature superconducting films, and the dielectric substrate 13 is made of magnesium oxide MgO with a thickness of 0.50 mm and a dielectric constant of 9.71.

图5(a)是本实施例给定基频频率为488.4MHz,设计的一个平面超导微带线谐振器结构。该结构中的螺圈均为正方形螺圈51,最外层螺圈的外轮廓长为5mm,宽为5mm。条带线总长度为76.56mm,线宽为0.04mm,相邻螺圈等间距且间距为0.02mm。Fig. 5(a) is a planar superconducting microstrip line resonator structure designed in this embodiment given that the fundamental frequency is 488.4MHz. The coils in this structure are all square coils 51, and the outer contour of the outermost coil is 5 mm long and 5 mm wide. The total length of the strip line is 76.56 mm, the line width is 0.04 mm, and the adjacent spiral coils are equally spaced and the interval is 0.02 mm.

图5(b)为本实施例经电磁仿真软件Sonnet仿真得到的频率响应特性曲线,其基频谐振频率52为488.4MHz,二次谐频频率53为1465.7MHz,为基频频率的3.0倍。Fig. 5 (b) is the frequency response characteristic curve obtained by the electromagnetic simulation software Sonnet simulation of this embodiment, its fundamental frequency resonant frequency 52 is 488.4MHz, and the second harmonic frequency 53 is 1465.7MHz, which is 3.0 times of the fundamental frequency.

上述实施例只是举例对本发明进行说明,但是本发明并不局限于此,可以在此基础上进行多种变形及不同圈数,例如但不限于图6(a)-(h)中的矩形、正方形、十字形、一端为拱形的矩形、半圆形及圆形等变形。此外,上述实施例中虽然选用了氧化镁MgO基片,但是根据需要完全可以使用铝酸镧LaAlO3基片、蓝宝石等其它材料的基片。这些变形也应属于本发明的同一设计构思,均应在本发明的保护范围之内。The above-mentioned embodiment is only an example to illustrate the present invention, but the present invention is not limited thereto, and various deformations and different numbers of turns can be carried out on this basis, such as but not limited to the rectangle in Fig. 6(a)-(h), Square, cross, rectangle with an arch at one end, semicircle, and circle. In addition, although the magnesium oxide MgO substrate is selected in the above embodiment, substrates of other materials such as lanthanum aluminate LaAlO 3 substrate and sapphire can be used as required. These deformations should also belong to the same design concept of the present invention, and all should be within the protection scope of the present invention.

Claims (4)

1.一种平面超导微带线谐振器,包括上层超导薄膜、下层超导薄膜和位于两层超导薄膜之间的介质基片,其特征在于,所述上层超导薄膜为用一条连续完整的超导条带线由内往外沿顺时针或逆时针螺旋环绕二至四圈构成。1. A planar superconducting microstrip line resonator, comprising an upper superconducting film, a lower superconducting film and a dielectric substrate positioned between two layers of superconducting films, is characterized in that, said upper superconducting film is a A continuous and complete superconducting strip line consists of two to four helical turns clockwise or counterclockwise from the inside to the outside. 2.如权利要求1所述谐振器,其特征在于,所述条带线是由直线型条带段相连接构成或由弧线型条带段连接构成。2 . The resonator according to claim 1 , wherein the strip lines are formed by connecting linear strip segments or by connecting arc-shaped strip segments. 3 . 3.如权利要求1所述谐振器,其特征在于,所述条带线的线宽为0.01mm至0.50mm。3. The resonator according to claim 1, wherein the strip line has a line width of 0.01 mm to 0.50 mm. 4.如权利要求1所述谐振器,其特征在于,所述条带线的线间距离为0.01mm至0.10mm。4. The resonator according to claim 1, wherein the distance between the strip lines is 0.01 mm to 0.10 mm.
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CN106450612A (en) * 2016-11-23 2017-02-22 广西大学 High-Q-value low-loss ultrahigh-frequency high-temperature superconducting filter

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CN1925212A (en) * 2005-08-31 2007-03-07 中国科学院物理研究所 Plane superconductive micro-strip resonator
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