CN102242353A - Metal-organic chemical vapor deposition machine - Google Patents
Metal-organic chemical vapor deposition machine Download PDFInfo
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- CN102242353A CN102242353A CN2010101809706A CN201010180970A CN102242353A CN 102242353 A CN102242353 A CN 102242353A CN 2010101809706 A CN2010101809706 A CN 2010101809706A CN 201010180970 A CN201010180970 A CN 201010180970A CN 102242353 A CN102242353 A CN 102242353A
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- chip
- bearing disc
- vapor deposition
- chemical vapor
- supporting
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 235000012431 wafers Nutrition 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to a metal-organic chemical vapor deposition machine. The deposition machine comprises a reaction chamber body, a rotating seat, a crystal plate tray, a heater and a jet head. The reaction chamber body is provided with an opening. The rotating seat is arranged in the reaction chamber body. The crystal plate tray is arranged on the rotating seat and is driven by the rotating seat to rotate. The crystal plate tray comprises multiple loading zones with at least two different diameters and the loading zones are arranged on the surface of the crystal plate tray and can load multiple corresponding crystal plates. The heater is arranged below the crystal plate tray and located in the rotating seat. The jet head is covered on the opening of the reaction chamber body, and discharges reaction gas towards the surface of the crystal plate tray. The metal-organic chemical vapor deposition machine can utilize a usage space of a crystal plate tray effectively, greatly improve a production efficiency of an element, increase a production capacity, and give consideration to a utilization rate of a crystal plate tray space and a utilization of a large size crystal plate thereby reducing a production cost.
Description
Technical field
The present invention relates to a kind of chemical vapour deposition (Chemical Vapor Deposition; CVD) board, and particularly relate to a kind of Metalorganic chemical vapor deposition (Metal-Organic CVD; MOCVD) board.
Background technology
In the making processes of photodiode (LED), because the luminescent quality of the quality of the semiconductor material layer in the photodiode and photodiode is closely bound up, so the extension program of each semiconductor material layer is considerable step.And in the extension program of photodiode, generally all need to utilize chip-bearing disc (Wafer Susceptor) to come loaded with wafers.
Generally, in present crystal chip bearing disk technology, all be the wafer that the single wafer carrier only can load single kind of size.With present LED epitaxial technology, the design of chip-bearing disc all is to be covered with the entire wafer carrier with 2 inches crystal chip bearing districts.Wherein, because the size in these crystal chip bearing districts is little, therefore closely arrangement mode setting, and then can obtain bigger chip-bearing disc utilising efficiency.
Along with the progress of Technology, the wafer size that is adopted also increases gradually.For example, in the making of photodiode, the blue light epitaxial substrate is by 2 inches original 4 inches of being developed to now.The purpose that the increase of substrate size is general is in order to reduce the cost of subsequent die technology.But, be subject to the size of former reaction cavity, and can't will enlarge the size of chip-bearing disc.At this moment, after the supporting region of chip-bearing disc planned that again 4 inches wafers are loaded in adjustment, the quantity in 4 inches crystal chip bearing districts that can be provided with can significantly be reduced to 7.
Please refer to Fig. 1, it illustrates the schematic layout pattern in the crystal chip bearing district of two kinds of sizes on the conventional wafer carrier.On this chip-bearing disc 100, if design can be provided with 31 2 inches crystal chip bearing district 104, broken circle as shown in Figure 1 when loading 2 inches wafers on the surface 102 of chip-bearing disc 100.Under this design, undersized crystal chip bearing district 104 can closely arrange.On the other hand, when 4 inches wafers are loaded in chip-bearing disc 100 designs, be subject to the influence of the size of wafer, only 74 inches crystal chip bearing district 106 can be set on the surface 102 of chip-bearing disc 100, solid line circle as shown in Figure 1.
As seen from Figure 1, when 4 inches crystal chip bearing district 106 is set, when the utilization ratio of surface 102 areas of chip-bearing disc 100 is starkly lower than the crystal chip bearing district 104 that is provided with 2 inches.Thus, at same size Metalorganic chemical vapor deposition (Metal-Organic CVD; MOCVD) under the reaction cavity of board, though the employing of large-sized wafer can be saved the cost of subsequent die technology, but when being the epitaxy technique of leading portion, not only do not reach the purpose that increases element output quantity, reduce the output quantity of element on the contrary, and then had the technology of raising condition of cost to produce.
Summary of the invention
Therefore, an aspect of the present invention is providing a kind of Metalorganic chemical vapor deposition board exactly, and its chip-bearing disc is provided with the crystal chip bearing district of many sizes, thus, can more effectively utilize the usage space of chip-bearing disc.
Another aspect of the present invention is that a kind of Metalorganic chemical vapor deposition board is being provided, and the design of its chip-bearing disc has the high-mechanic space, therefore can significantly improve the production efficiency of element, and production capacity can obtain to promote.
Another aspect of the present invention is that a kind of Metalorganic chemical vapor deposition board is being provided, and it can take into account the utilization of space of chip-bearing disc and the employing of large-sized wafer, therefore can reduce production costs.
According to above-mentioned purpose of the present invention, a kind of Metalorganic chemical vapor deposition board is proposed.This Metalorganic chemical vapor deposition board comprises reaction cavity, rotary seat, chip-bearing disc, well heater and jet thrust (Shower Head).Reaction cavity has opening.Rotary seat is located in the reaction cavity.Chip-bearing disc is located on the rotary seat, and rotary seat can drive the crystal chip bearing disc spins.Wherein, chip-bearing disc comprises a plurality of supporting regions of at least two different diameters, is located on the surface of chip-bearing disc, and these supporting regions are suitable for and load a plurality of wafers with correspondence.Well heater is located at the chip-bearing disc below, and is positioned at rotary seat.Jet thrust covers on the opening of reaction cavity, to discharge reactant gases on the surface of chip-bearing disc.
According to embodiments of the invention, comprise identical a plurality of first supporting regions of diameter and identical a plurality of second supporting regions of diameter in the above-mentioned supporting region, and the diameter of first supporting region is greater than the diameter of second supporting region.
According to another embodiment of the present invention, the degree of depth of the first above-mentioned supporting region is greater than the degree of depth of second supporting region.
According to another embodiment of the present invention, the degree of depth of the first above-mentioned supporting region equals the degree of depth of second supporting region.
According to an embodiment more of the present invention, the degree of depth of above-mentioned supporting region is less than the thickness of the wafer of correspondence loading.
By the crystal chip bearing district of at least two kinds of sizes is set on chip-bearing disc, can more effectively utilize the usage space of chip-bearing disc, therefore not only can take into account the utilization of space of chip-bearing disc and the employing of large-sized wafer, more can reach production efficiency that improves element and the purpose that reduces production costs.
Description of drawings
For above-mentioned and other purposes of the present invention, feature, advantage and embodiment can be become apparent, the description of the drawings is as follows:
Fig. 1 illustrates the schematic layout pattern in the crystal chip bearing district of two kinds of sizes on the conventional wafer carrier.
Fig. 2 illustrates the device synoptic diagram according to a kind of Metalorganic chemical vapor deposition board of embodiment of the present invention.
Fig. 3 illustrates the vertical view according to a kind of chip-bearing disc of embodiment of the present invention.
Fig. 4 illustrates the sectional view according to a kind of chip-bearing disc of embodiment of the present invention.
Fig. 5 illustrates the vertical view according to a kind of chip-bearing disc of another embodiment of the present invention.
Description of reference numerals
100: chip-bearing disc 102: surface
104: crystal chip bearing district 106: the crystal chip bearing district
200: Metalorganic chemical vapor deposition board 202: reaction cavity
204: rotary seat 206: chip-bearing disc
208: surface 210: wafer
212: supporting region 214: wafer
216: supporting region 218: well heater
220: jet thrust 221: gas orifice
222: venting port 224: reactant gases
226: opening 228: the degree of depth
230: the degree of depth 232: chip-bearing disc
234: supporting region 236: supporting region
238: the surface
Embodiment
Please refer to Fig. 2, it illustrates the device synoptic diagram according to a kind of Metalorganic chemical vapor deposition board of embodiment of the present invention.In the present embodiment, Metalorganic chemical vapor deposition board 200 is applicable to the extension operation of the semiconductor material layer that carries out photodiode.Metalorganic chemical vapor deposition board 200 can for example comprise reaction cavity 202, rotary seat 204, chip-bearing disc 206, well heater 218 and jet thrust 220.
In Metalorganic chemical vapor deposition board 200, reaction cavity 202 generally has opening 226, is beneficial to several wafers are positioned on the chip-bearing disc 206 via opening 226.In addition, according to process requirements, reaction cavity 202 optionally includes at least one venting port 222 usually.Venting port 222 can for example be arranged on the bottom of reaction cavity 202, in order to the waste gas produced discharge reaction cavity 202 of technology.The extension operation of elements such as photodiode is carried out in reaction cavity 202 usually.
Chip-bearing disc 206 is handled to transport these wafers 210 and 214 in order to support and several wafers 210 and 214 of loading.Chip-bearing disc 206 is arranged on the rotary seat 204, and is supported by rotary seat 204.Chip-bearing disc 206 can be fixed on the rotary seat 204 by the fixed form that fixes.When rotary seat 204 rotations, can drive chip-bearing disc fixed thereon 206 rotations, and then the wafer 210 and 214 that drives on the chip-bearing disc 206 rotates.
When in Metalorganic chemical vapor deposition board 200, carrying out epitaxy technique, the extension resultants that produce through chemical reaction in the certain reaction cavity 202 be whole property be deposited on chip-bearing disc 206 surfaces.Thereby, be deposited on the epitaxial film of interstitial site between the wafer, cause for no reason waste owing to carrying out subsequent technique.Therefore, the treatable number of elements of institute is many more in identical reaction cavity space, can reduce the cost of manufacture of element.Hence one can see that, and the design of chip-bearing disc 206 can influence element output quantity.
Please be simultaneously with reference to Fig. 3 and shown in Figure 4, wherein Fig. 3 illustrates the vertical view according to a kind of chip-bearing disc of embodiment of the present invention, and Fig. 4 then illustrates the sectional view of the chip-bearing disc of Fig. 3.In the present embodiment, the surface 208 of chip-bearing disc 206 is provided with several supporting regions 212 and 216.Wherein, these supporting regions 212 and 216 are arranged with the sunk area in the surface 208 of chip-bearing disc 206.Thus, favourable chip-bearing disc 206 firmly support wafer 210 and 214 in reaction cavity 202, carry out technology.
From embodiment shown in Figure 3 as can be known, these supporting regions 212 and 216 are circle.And in this embodiment, chip-bearing disc 206 comprises the supporting region 212 and 216 of two kinds of different diameters.Wherein, the diameter of all supporting regions 212 is identical, and the diameter of supporting region 216 is identical, and the diameter of supporting region 212 is greater than the diameter of supporting region 216.In example, for example in the technology of photodiode, the diameter of supporting region 212 can for example be 4 inches, and the diameter of supporting region 216 can for example be 2 inches then.
In the present embodiment, large-sized supporting region 212 can be set on the surface 208 of chip-bearing disc 206 earlier, on the zone that is available in the surface 208 of chip-bearing disc 206 undersized supporting region 216 be set again.So, not only can improve the utilization ratio on the surface 208 of chip-bearing disc 206, but and then the production efficiency of lift elements.
More noticeable is that though the chip-bearing disc 206 of present embodiment comprises the supporting region 212 and 216 of two kinds of different diameters, in other embodiments, chip-bearing disc can comprise the supporting region of the different diameter more than two kinds.
Please referring again to Fig. 2, in chip-bearing disc 206, the supporting region 212 of different diameter is suitable for corresponding loading wafers having different sizes 210 and 214 with 216.Supporting region 212 can be equal to or greater than the wafer 210 of corresponding loading and 214 diameter with 216 diameter, in order to loaded with wafers 210 and 214.These supporting regions 212 and 216 shape can with its wafer 210 and 214 the shape of corresponding loading identical.In further embodiments, supporting region 212 and 216 shape can with its wafer 210 and 214 the shape of corresponding loading different.
Please refer to Fig. 2 and Fig. 4, in an embodiment, supporting region 212 and 216 the degree of depth 228 and 230 preferably can be less than or equal to its wafer 210 of corresponding loading and 214 thickness.Therefore, when wafer 210 and 214 being loaded in the supporting region 212 and 216 of chip-bearing disc 206 respectively, wafer 210 is flushed with the surface 208 of chip-bearing disc 206 with 214 surface, perhaps all be higher than the surface 208 of chip-bearing disc 206.So, when the wafer on the chip-bearing disc 206 210 and 214 is for example carried out deposition step such as extension, on the supporting region 212 that can avoid material deposition to cover being arranged with in chip-bearing disc 206 and 216 the sidewall, and then can avoid settling on the sidewall of supporting region 212 and 216 to influence the carrying out of subsequent technique.
Because wafers having different sizes has different thickness, therefore the supporting region 212 and 216 of chip-bearing disc 206 can be designed to have different depths, to cooperate the thickness of each wafer.Generally speaking, the thickness of large-sized wafer 210 is greater than the thickness of undersized wafer 214.Therefore, in an embodiment, as shown in Figure 4, the degree of depth 228 of the supporting region 212 of loading large-sized wafer 210 is greater than the degree of depth 230 of the supporting region 216 that loads small size wafer 214.So, in further embodiments, the deep equality that the degree of depth of the supporting region of loading large-sized wafer also can be designed to and load the supporting region of small size wafer.
Please referring again to Fig. 2, well heater 218 is arranged on the below of chip-bearing disc 206, and is positioned within the rotary seat 204, so that the wafer on the chip-bearing disc 206 210 and 214 is carried out heat treated.The running of well heater 218 preferably is independent of rotary seat 204, and well heater 218 can not rotated because of the rotation of rotary seat 204.Rotation by rotary seat 204 drives chip-bearing disc 206 rotations, can make wafer 210 and 214 thermally equivalents on the chip-bearing disc 206, makes the characteristic of formed element more close thus.
220 of jet thrusts are arranged on the reaction cavity 202, and cover on the opening 226 of reaction cavity 202.The lower surface of jet thrust 220 has a plurality of gas orifices 221 and faces mutually with the wafer 210 and 214 on the chip-bearing disc 206.Thus, enter the reactant gases 224 of jet thrust 220, can see through gas orifice 221, and discharge on wafer 210 and 214 towards the surface 208 of chip-bearing disc 206.Thus, can on wafer 210 and 214, carry out for example deposition step such as extension.
Please refer to Fig. 5, it illustrates the vertical view according to a kind of chip-bearing disc of another embodiment of the present invention.In this embodiment, 7 large-sized crystal chip bearing districts 234 can be set earlier on the surface 238 of chip-bearing disc 232, in these large size supporting region 234 peripheries 6 small size crystal chip bearing districts 236 are set again.
For example, if chip-bearing disc shown in Figure 1 100 and chip-bearing disc 206 shown in Figure 3 and chip-bearing disc 232 shown in Figure 5 are the carrier of diameter 380mm.Wherein, under such diameter dimension, the design of conventional wafer carrier 100 can be carried 31 2 inches wafers.In existing reaction cavity, when using 31 2 inches wafers of chip-bearing disc 100 carryings, single the fertile small size light-emitting diode chip for backlight unit of extension program (is of a size of 10 * 23mil
2) quantity is 433318; Perhaps middle large size light-emitting diode chip for backlight unit (is of a size of 20 * 40mil
2) quantity is 125674.If when adopting 74 inches wafers of chip-bearing disc 100 carryings, single the fertile small size light-emitting diode chip for backlight unit of extension program (is of a size of 10 * 23mil
2) quantity is 391391; Perhaps middle large size light-emitting diode chip for backlight unit (is of a size of 20 * 40mil
2) quantity is 113505.After being adjusted into 74 inches wafers by 31 2 inches wafers, it is about 10.72% that the output of small size light-emitting diode chip for backlight unit reduces, and the output of middle large size light-emitting diode chip for backlight unit reduces 10.71% approximately.
In addition, if when using the chip-bearing disc 206 of Fig. 3, single the fertile small size light-emitting diode chip for backlight unit of extension program (is of a size of 10 * 23mil
2) quantity is 405368; Perhaps middle large size light-emitting diode chip for backlight unit (is of a size of 20 * 40mil
2) quantity is 117560.With respect to 31 2 inches chip-bearing disc, it is about 6.89% that the output of small size light-emitting diode chip for backlight unit reduces, and the output of middle large size light-emitting diode chip for backlight unit reduces 6.9% approximately.But with respect to 74 inches chip-bearing disc, it is about 3.57% that the output of small size light-emitting diode chip for backlight unit can promote, and the output of middle large size light-emitting diode chip for backlight unit can promote about 3.57%.
In addition, if when using the chip-bearing disc 232 of Fig. 5, single the fertile small size light-emitting diode chip for backlight unit of extension program (is of a size of 10 * 23mil
2) quantity is 475259; Perhaps middle large size light-emitting diode chip for backlight unit (is of a size of 20 * 40mil
2) quantity is 137829.With respect to 31 2 inches chip-bearing disc, the output of small size light-emitting diode chip for backlight unit increases by 9.68% approximately, and the output of middle large size light-emitting diode chip for backlight unit increases by 9.67% approximately.And with respect to 74 inches chip-bearing disc, it is about 21.43% that the output of small size light-emitting diode chip for backlight unit more can increase, and the output of middle large size light-emitting diode chip for backlight unit can increase about 21.43%.
As shown in the above description, under the same carrier size, the design of many sizes supporting region can take into account the employing of large-sized wafer and the utilization ratio of carrier usage space really.Therefore, adopt the carrier of many sizes of tool supporting region of above-mentioned embodiment effectively to promote production efficiency, have the volume production advantage.
By above-mentioned embodiment as can be known, advantage of the present invention is the crystal chip bearing district that the chip-bearing disc of Metalorganic chemical vapor deposition board is provided with many sizes, therefore can more effectively utilize the usage space of chip-bearing disc.
By above-mentioned embodiment as can be known, the design that another advantage of the present invention is the chip-bearing disc of Metalorganic chemical vapor deposition board has the high-mechanic space, therefore can significantly improve the production efficiency of element, further can make production capacity obtain to promote.
By above-mentioned embodiment as can be known, another advantage of the present invention can be taken into account the utilization of space of chip-bearing disc and the employing of large-sized wafer for the Metalorganic chemical vapor deposition board, therefore can effectively reduce production costs.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; any those of ordinary skill in this technical field; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (10)
1. Metalorganic chemical vapor deposition board comprises:
Reaction cavity has opening;
Rotary seat is located in this reaction cavity;
Chip-bearing disc, be located on this rotary seat, and this rotary seat can drive this crystal chip bearing disc spins, wherein this chip-bearing disc comprises a plurality of supporting regions of at least two different diameters, be located on the surface of this chip-bearing disc, these a plurality of supporting regions are suitable for and load a plurality of wafers with correspondence;
Well heater is located at this chip-bearing disc below, and is positioned at this rotary seat; And
Jet thrust covers on this opening of this reaction cavity, to discharge reactant gases on this surface of this chip-bearing disc.
2. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein these a plurality of supporting regions comprise the supporting region of 4 inches of the supporting region of a plurality of 2 inches diameters and a plurality of diameters.
3. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein comprise identical a plurality of first supporting regions of diameter and identical at least one second supporting region of diameter in these a plurality of supporting regions, and the diameter of these a plurality of first supporting regions is greater than the diameter of this at least one second supporting region.
4. Metalorganic chemical vapor deposition board as claimed in claim 3, wherein the degree of depth of these a plurality of first supporting regions is greater than the degree of depth of this at least one second supporting region.
5. Metalorganic chemical vapor deposition board as claimed in claim 3, wherein the degree of depth of these a plurality of first supporting regions equals the degree of depth of this at least one second supporting region.
6. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein the degree of depth of these a plurality of supporting regions is less than the thickness of these a plurality of wafers of correspondence loading.
7. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein the degree of depth of these a plurality of supporting regions equals the thickness of corresponding these a plurality of wafers that load.
8. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein the shape of these a plurality of supporting regions is identical with the shape of these a plurality of wafers of corresponding loading.
9. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein the diameter of these a plurality of supporting regions is equal to or greater than the diameter of corresponding these a plurality of wafers that load.
10. Metalorganic chemical vapor deposition board as claimed in claim 1, wherein this well heater is not this rotary seat institute driven rotary.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101809706A CN102242353A (en) | 2010-05-14 | 2010-05-14 | Metal-organic chemical vapor deposition machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101809706A CN102242353A (en) | 2010-05-14 | 2010-05-14 | Metal-organic chemical vapor deposition machine |
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| Publication Number | Publication Date |
|---|---|
| CN102242353A true CN102242353A (en) | 2011-11-16 |
Family
ID=44960588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101809706A Pending CN102242353A (en) | 2010-05-14 | 2010-05-14 | Metal-organic chemical vapor deposition machine |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605341A (en) * | 2011-01-20 | 2012-07-25 | 奇力光电科技股份有限公司 | Vapor deposition apparatus and susceptor |
| CN107591354A (en) * | 2016-07-06 | 2018-01-16 | 苏州能讯高能半导体有限公司 | A kind of print pallet for being applicable to more size prints |
| JP2019522370A (en) * | 2016-07-09 | 2019-08-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate carrier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321333A (en) * | 1999-09-03 | 2001-11-07 | 三菱硅材料株式会社 | Wafer holder |
| CN101440479A (en) * | 2007-11-21 | 2009-05-27 | 住友电气工业株式会社 | Metalorganic chemical vapor deposition reactor |
-
2010
- 2010-05-14 CN CN2010101809706A patent/CN102242353A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321333A (en) * | 1999-09-03 | 2001-11-07 | 三菱硅材料株式会社 | Wafer holder |
| CN101440479A (en) * | 2007-11-21 | 2009-05-27 | 住友电气工业株式会社 | Metalorganic chemical vapor deposition reactor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605341A (en) * | 2011-01-20 | 2012-07-25 | 奇力光电科技股份有限公司 | Vapor deposition apparatus and susceptor |
| CN107591354A (en) * | 2016-07-06 | 2018-01-16 | 苏州能讯高能半导体有限公司 | A kind of print pallet for being applicable to more size prints |
| JP2019522370A (en) * | 2016-07-09 | 2019-08-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Substrate carrier |
| US11676849B2 (en) | 2016-07-09 | 2023-06-13 | Applied Materials, Inc. | Substrate carrier |
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