CN102237455A - Light emitting diode structure - Google Patents
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- CN102237455A CN102237455A CN 201010159594 CN201010159594A CN102237455A CN 102237455 A CN102237455 A CN 102237455A CN 201010159594 CN201010159594 CN 201010159594 CN 201010159594 A CN201010159594 A CN 201010159594A CN 102237455 A CN102237455 A CN 102237455A
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Abstract
本发明涉及一种发光二极管结构，用以增加电流的扩散程度，改善发光效率；所述发光二极管结构于N型半导体层之间再添加一N型电流扩散层，用以使流经N型半导体层的电流均匀分布；其中，N型电流扩散层包含三层以上的子层，其通式为InxAlyGa(1-x-y)N(0≤x≤1，0≤y≤1，0≤x+y≤1)，并自基板侧朝发光层侧依次由低能隙层叠至高能隙。
The present invention relates to a light emitting diode structure for increasing the diffusion degree of current and improving the luminous efficiency; the light emitting diode structure further adds an N-type current diffusion layer between N-type semiconductor layers for uniformly distributing the current flowing through the N-type semiconductor layers; wherein the N-type current diffusion layer comprises more than three sublayers, the general formula of which is InxAlyGa (1-xy) N(0≤x≤1, 0≤y≤1, 0≤x+y≤1), and is stacked in sequence from a low energy gap to a high energy gap from a substrate side toward a light emitting layer side.
Description
Technical field
(light-emitting diode, LED) structure relate in particular to a kind of light emitting diode construction that can increase the CURRENT DISTRIBUTION ability to the present invention relates to a kind of light-emitting diode.
Background technology
(Light Emitting Diode LED) has many advantages such as luminous efficiency height, the life-span is long, volume is little, low power consumption and color representation are good to light-emitting diode, therefore under the demand of stressing environmental protection and energy saving, substitutes existing illuminating source in large quantities.After the gallium nitride based light emitting diode of Japan's proposition in 1993 produced important breakthrough, the whole world had started the research agitation of gallium nitride based light emitting diode.
Known light emitting diode construction 10 as shown in Figure 1, it comprises a substrate 11, a n type semiconductor layer 12, a luminescent layer 13 (or being called active layer (active layer)), a p type semiconductor layer 14, a P type current-diffusion layer 15 (current spreading layer), one first electrode 16 and one second electrode 17; Wherein, this n type semiconductor layer 12 is formed on the substrate 11, and this luminescent layer 13 is formed on the n type semiconductor layer 12, and this p type semiconductor layer 14 is formed on the luminescent layer 13, and this P type current-diffusion layer 15 is formed on this p type semiconductor layer 14; This first electrode 16 is formed on the P type current-diffusion layer 15, and 17 at this second electrode is formed at exposing on the plane on this n type semiconductor layer 12.This n type semiconductor layer 12 for example is a n type gallium nitride (GaN) layer, and this p type semiconductor layer 14 for example is a P type gallium nitride layer, and this luminescent layer 13 for example is an InGaN (InGaN) layer.
Because plane formula or the sheet resistor value (sheet resistance) of large-area light-emitting diode between first electrode 16 and p type semiconductor layer 14 are bigger, current crowding (current crowding) phenomenon takes place easily, therefore can improve the current crowding phenomenon and promote luminous efficiency simultaneously by adding P type current-diffusion layer 15.
Traditional light-emitting diode is to adopt nickel gold or chromium billon as P type current-diffusion layer 15, promotes the uniformity of CURRENT DISTRIBUTION thus.But P type current-diffusion layer 15 light transmissions of nickel gold or chromium billon material are not good, must limit its thickness between hundreds of
To obtain preferable translucent effect.Yet Bao thickness is difficult for forming form compact and stable film excessively, therefore is difficult to evenly averaging out under scattered current and the printing opacity requirement.
In recent years, (transparent conductive oxide, TCO) film replaced above-mentioned emtal alloy film as P type current-diffusion layer 15, so that improve the problem of printing opacity with transparent conductive oxide gradually.Yet, though the light transmittance of transparent conductive oxide can reach more than 90%, still have with p type semiconductor layer 14 nurses difficult to understand and contact not good problem, cause being easy to generate current crowding phenomenon (current crowding), reduce whole light extraction efficiency.It is a lot of to improve the not good known technology of above-mentioned nurse contact difficult to understand, " luminescence component forms the method and the structure of electrode " of No. the 579608th, TaiWan, China patent for example, it is the nurse contact point difficult to understand that forms the metal or metal alloy material on P type gallium nitride semiconductor layers earlier, forms the printing opacity sull more thereon; Or as " light-emitting diode and the manufacture method thereof " of TaiWan, China patent I240443 number, it is to form a superlattice stress contact layer on P type gallium nitride semiconductor layers earlier, then forms transparency conducting layer again.
Uniform current under high electric current injects distributes, and always is the development priority of high power, large tracts of land gallium nitride light-emitting diode and solid-state illumination technology.But, though P type current-diffusion layer 15 has improved the current crowding phenomenon in p type semiconductor layer 14 zones and has reduced this regional sheet resistor value, but for the light-emitting diode of large tracts of land and the injection of high electric current, the current crowding phenomenon can be transferred to n type semiconductor layer 12 zones.Because the electric current congestion phenomenon that takes place when high electric current injects can influence the luminous efficiency of luminescent layer 13 tempestuously, causes the assembly regional area overheated simultaneously, so can reduce the internal quantum of light-emitting diode component, causes luminous efficiency not good.
Summary of the invention
Therefore, the objective of the invention is to address the above problem, and then propose a kind ofly can promote N type zone electric current diffusion effect, reduce the light emitting diode construction of N type zone sheet resistor value.
In order to reach aforementioned purpose, the present invention adds a N type current-diffusion layer again between n type semiconductor layer, uses so that the electric current of the n type semiconductor layer of flowing through evenly distributes.The light emitting diode construction that the present invention proposes comprises: a substrate, a n type semiconductor layer, a luminescent layer, a p type semiconductor layer and at least one N type current-diffusion layer.Wherein, this n type semiconductor layer is formed on this substrate, and luminescent layer is formed on this n type semiconductor layer, and p type semiconductor layer is formed on this luminescent layer; This N type current-diffusion layer then comprises the sublayer more than three layers, and the general formula of these sublayers is In
xA
lYGa
(1-x-y)N (0≤x≤1,0≤y≤1,0≤x+y≤1), and this substrate-side is laminated to high energy gap by low energy gap successively towards this luminescent layer side certainly.
Provide higher electron concentration by N type current-diffusion layer, can effectively promote the even distribution of electric current and reduce the sheet resistor value; Side by side, also can reduce the operating voltage of light-emitting diode, and promote its luminous efficiency by the present invention.Relevant detailed technology content of the present invention and preferred embodiment cooperate graphic being described as follows.
Description of drawings
In conjunction with graphic description embodiments of the present invention:
Fig. 1 is the structural representation of known luminescence diode;
Fig. 2 is the structural representation of one embodiment of the invention;
Fig. 3 is the structural representation of another embodiment of the present invention;
Fig. 4-1 and Fig. 4-2 contrast the experiment comparison diagram of known structure for the present invention; And
Fig. 5 is the structural representation of another embodiment of the present invention.
Embodiment
Light emitting diode construction of the present invention is to form at least one N type current-diffusion layer again in the N type semiconductor interlayer, increases electric current thus and evenly distributes in the side direction of n type semiconductor layer, makes it have higher electron concentration and lower sheet resistor.Yet, it should be noted that, " N type " among the present invention in " N type current-diffusion layer " and " P type current-diffusion layer " vocabulary is in order to distinguish the zone that these current-diffusion layers are positioned at N type or P type with " P type ", but not referring to that current-diffusion layer itself must be defined as the doping of N type or the P type mixes, available material will be done detailed explanation in aftermentioned on the practice.Relevant detailed description of the present invention and technology contents now cooperate graphic being described as follows:
With reference to shown in Figure 2, it is the structural representation of one embodiment of the invention, as shown in the figure: among this embodiment, light emitting diode construction 20 comprises: a substrate 21, a n type semiconductor layer 22, a N type current-diffusion layer 23, a luminescent layer 24, a p type semiconductor layer 25, a P type current-diffusion layer 26, one first electrode 27 and one second electrode 28.Wherein, this n type semiconductor layer 22 is formed on the substrate 21; This N type current-diffusion layer 23 is formed at (being the zone between luminescent layer 24 and the substrate 21) between this n type semiconductor layer 22; This luminescent layer 24 is formed on the subregion of n type semiconductor layer 22, causes this n type semiconductor layer 22 to form one and exposes plane 220; This p type semiconductor layer 25 is formed on the luminescent layer 24; This P type current-diffusion layer 26 is formed on this p type semiconductor layer 25; This first electrode 27 is formed on the P type current- diffusion layer 26, and 28 at this second electrode is formed at exposing on the plane 220 on this n type semiconductor layer 22.
This N type current-diffusion layer 23 also reduces the sheet resistor of N type current-diffusion layer 23 simultaneously in order to higher electron concentration to be provided, and to increase the degree of scatter of electric current by n type semiconductor layer 22, impels electric current evenly to distribute.Wherein, this N type current-diffusion layer 23 is made up of the sublayer more than three layers or three layers, and these sublayers are to be stacked to high gap material by low energy gap (band gap) material layer, and close substrate 21 sides in the sublayer of low gap material, and the sublayer of high gap material is near luminescent layer 24 sides.Further, the material of these N type current-diffusion layer 23 each sublayers can general formula I n
xAl
yGa
(1-x-y)N represents, wherein 0≤x≤1,0≤y≤1,0≤x+y≤1.By selecting the numerical value of different x and y, can obtain different gap material.For instance, in one embodiment of this invention, this N type current-diffusion layer 23 can comprise an InGaN (In respectively from the low paramount energy gap of energy gap
xGa
1-xN, 0≤x≤1) layer 231, one gallium nitride (GaN) layer 232 and one aluminium gallium nitride alloy (Al
xGa
1-xN, 0≤x≤1) layer 233, the three forms many heterojunctions (heterojunction) structure.Wherein, at the connect face place of gallium indium nitride layer 231 with gallium nitride layer 232, the lattice mismatch of two materials (lattice mismatch) can cause piezoelectric field (piezoelectric field) polarization, and then produces the electronics of high concentration; Spontaneous polarization (spontaneous polarization) phenomenon then can take place and the electron concentration that increases, therefore can significantly promote the electron concentration of N type current-diffusion layer 23 at the face that the connects place of gallium nitride 232 and aluminium gallium nitride alloy 233.In addition, this N type current-diffusion layer 23 is positioned at the position of 22 of n type semiconductor layers, can consider to be arranged at the face that the connects top of this second electrode 28 and this n type semiconductor layer 22, and promptly this exposes the top of plane 220 lowest parts, to obtain preferable electric current dispersion effect.
In addition, the crystalline substance of heap of stone of this N type current-diffusion layer 23 can be silicon doping structure or non-impurity-doped structure, in this and indefinite; In one embodiment, the thickness of this N type current-diffusion layer 23 can be between 1nm～200nm.On processing procedure, the formation method of this N type current-diffusion layer 23 is can be prior to forming one first n type semiconductor layer 221 on the substrate 21 earlier, order according to low paramount energy gap sublayer, energy gap sublayer forms this N type current-diffusion layer 23 on this first n type semiconductor layer 221 again, forms one second n type semiconductor layer 222, luminescent layer 24, p type semiconductor layer 25 etc. subsequently more in regular turn.
In one embodiment of this invention, above-mentioned substrate 21 can be an insulated substrate, for example, comprises as the material of this insulated substrate: aluminium oxide (sapphire) (Al
2O
3, sapphire), aluminium nitride (AlN), gallium nitride (GaN), magnesium oxide (MgO), zinc oxide (ZnO), lithia gallium (LiGaO
3) and aluminium oxide lithium (LiAlO
3), carborundum (SiC), silicon substrate (Si) etc.
In one embodiment of this invention, luminescent layer 24 can be multi-layer quantum well (multi-quantum well, MQW) structure.In addition, the material that constitutes above-mentioned n type semiconductor layer 22, luminescent layer 24 and p type semiconductor layer 25 can be the III-V element material that contains gallium nitride, with general formula I n
xAl
yGa
(1-x-y)N represents, wherein 0≤x≤1,0≤y≤1,0≤x+y≤1.The formation method of this gallium nitride compound there is no special qualification, and for example: Metalorganic Chemical Vapor Deposition (MOCVD), hydrogenation gas phase building crystal to grow method (HVPE), chloride gas phase brilliant method of heap of stone, molecular beam epitaxy flop-in method (MBE) etc. can be for all methods of growth above-mentioned material.
In one embodiment of this invention, can form a resilient coating 29 again between this n type semiconductor layer 22 and this substrate 21, this resilient coating 29 for example is nitride, zinc oxide etc. and substrate 21 or the more close material of 22 lattice constants of n type semiconductor layer (lattice constant).In one embodiment, the thickness of this resilient coating can be between 1nm～200nm.
In one embodiment of this invention, above-mentioned P type current-diffusion layer 26 is in order to increase the CURRENT DISTRIBUTION in p type island region territory, it can be a transparent conductive oxide (transparentconductive oxide, TCO) layer, for example material is: tin indium oxide (indium tin oxide, ITO), cadmium tin (cadmium tin oxide, CTO), antimony tin (antimony tinoxide, ATO), aluminum zinc oxide (aluminum (doped) zinc oxide, AZO), indium zinc oxide (indium (doped) zinc oxide, IZO), zinc oxide (zinc oxide, ZnO), indium oxide (indium tin oxide, InO), tin oxide (tin oxide, SnO), aluminium oxide copper (copper aluminum oxide, CAO) and the cupric oxide strontium (strontiumcopper oxide, SCO) etc.
In one embodiment of this invention, material as above-mentioned first electrode 27 and second electrode 28 can be any material as electrode, for instance, it can be and is selected from indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (Co), cadmium (Cd), aluminium (Al), vanadium (V), silver (Ag), titanium (Ti), tungsten (W), platinum (Pt), palladium (Pd), rhodium (Rh) and ruthenium (Ru) and constitutes one or the metal alloy more than its binary or the binary in the group, but does not exceed with it.And the thickness of first electrode 27 and second electrode 28 can be between 1～10, between 000nm.
With reference to Fig. 3, it is the structural representation of another embodiment of the present invention, with the foregoing description different be in, can comprise a plurality of N type current-diffusion layers 23 in the n type semiconductor layer 22 of present embodiment, these N type current-diffusion layers 23 can connect between face place and the luminescent layer 24 at second electrode 28 and n type semiconductor layer 22, and each N type current-diffusion layer 23 does not contact mutually, and is not contacted with luminescent layer 24 yet, therebetween with N type semiconductor as at interval.Therefore, can add the dispersion effect of heavy current, and help promote whole luminous efficiency in N type zone by a plurality of N type current-diffusion layers 23.
The present invention also shows that with experiment above-mentioned N type current-diffusion layer 23 can increase the ability that electric current disperses really.If the light emitting diode construction 10 with Fig. 1 is a control group, the light emitting diode construction 20 of Fig. 2 is an experimental group, compare that N type current-diffusion layer 23 structures are to the electric current diffusion effect of n type semiconductor layer 22 and the influence of sheet resistor under the same conditions, its relevant parameter and result are as shown in table 1 below.Can find to comprise the n type semiconductor layer 22 of N type current-diffusion layer 23, its sheet resistor value is not only for comprising about 20% of N type current-diffusion layer.Apply under the voltage, the value that the electric current diffusivity in N type zone then can current density (current density) is estimated, if be higher than 600 (A/cm with current density again
2) and the regional extent of parallel substrate 21 directions estimate that experimental group can promote about 20% with respect to control group.
Table 1
| Control group | Experimental group | |
| P type semiconductor layer | GaN(0.2μm) | GaN(0.2μm) |
| Luminescent layer | In 0.16Ga 0.84N | In 0.16Ga 0.84N |
| N type semiconductor layer | GaN(3μm) | GaN(3μm) |
| N type current-diffusion layer | Do not have | (Al 0.1Ga 0.9N/GaN/In 0.07Ga 0.93N) (30nm/20nm/15nm) |
| Sheet resistor (ohm/sq) | 50 | 10.4 |
| Current density＞600 (A/cm 2) length | 365(μm) | 436(μm) |
Fig. 4-1 changes with operating voltage (operation voltage) with Fig. 4-2 surface temperature (junction temperature) that connects that shows above-mentioned experimental group and control group respectively.By the result as can be known, add to reduce the operating voltage of whole light-emitting diode and can reduce behind the N type current-diffusion layer 23 and connecing surface temperature, and have power saving, energy-conservation advantage; Simultaneously, because electric current evenly distributes, can promote the luminous efficiency of light-emitting diode integral body.
With reference to Fig. 5, it is the structural representation of another embodiment of the present invention.The present invention also is applicable to vertically standing LED structure 30, it comprises: a substrate 31, a n type semiconductor layer 32, a N type current-diffusion layer 33, a luminescent layer 34, a p type semiconductor layer 35, a P type current-diffusion layer 36, one first electrode 37, and this n type semiconductor layer 32 is formed on the substrate 31, this N type current-diffusion layer 33 is formed between this n type semiconductor layer 32, and structure is same as above-mentioned; This luminescent layer 34 is formed on the n type semiconductor layer 32, and this p type semiconductor layer 35 is formed on the luminescent layer 34; This P type current-diffusion layer 36 is formed on this p type semiconductor layer 35; This first electrode 37 is formed on the P type current-diffusion layer 36.Wherein, this substrate 31 is a conductive-type semiconductor, applies under the situation of an operating voltage at this substrate 31 and first electrode 37, and this light emitting diode construction 30 can send light.Wherein, this substrate 31 is the conductivity type material, for example can be: the conductive type nitride gallium (GaN) of carborundum (SiC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaAs), GaAs (GaAs), zinc selenide (ZnSe), indium phosphide (InP) and adding silicon doping etc.
Yet; above said content only is preferred embodiment of the present invention; be not the scope of patent protection of desire limitation patent of the present invention, therefore the equivalence done of all application specification of the present invention and graphic content changes and modifies, and all in like manner is contained in the scope of the present invention.
Claims (9)
1. light emitting diode construction is characterized in that it comprises:
One substrate (21);
One n type semiconductor layer (22) is formed on the described substrate (21);
One luminescent layer (24) is formed on the described n type semiconductor layer (22);
One p type semiconductor layer (25) is formed on the described luminescent layer (24);
Wherein, also comprise at least one N type current-diffusion layer (23) in the described n type semiconductor layer (22), use so that the electric current of the n type semiconductor layer of flowing through (22) evenly distributes; Described N type current-diffusion layer (23) comprises the sublayer more than three layers, and the general formula of described sublayer is In
xAl
yGa
(1-x-y)N (0≤x≤1,0≤y≤1,0≤x+y≤1), and be laminated to high energy gap by low energy gap successively towards described luminescent layer (24) side from described substrate (21) side.
2. light emitting diode construction according to claim 1, it is characterized in that, described light emitting diode construction also comprises an electrode (28), and described electrode (28) is arranged at one of described n type semiconductor layer (22) and exposes on the plane (220), forms one and connects face with the described plane (220) of exposing; Wherein, described N type current-diffusion layer (23) is positioned at described connecing on the face.
3. light emitting diode construction according to claim 1, it is characterized in that, described N type current-diffusion layer (23) comprises three sublayers, and described sublayer is laminated to high energy gap from low energy gap and is respectively a gallium indium nitride layer (231), a gallium nitride layer (232) and an aluminium gallium nitride alloy layer (233).
4. light emitting diode construction according to claim 1 is characterized in that, described N type current-diffusion layer (23) is a silicon doping structure.
5. light emitting diode construction according to claim 1 is characterized in that, described N type current-diffusion layer (23) is a non-impurity-doped structure.
6. light emitting diode construction according to claim 1 is characterized in that, the thickness of described N type current-diffusion layer (23) is between between the 1nm to 200nm.
7. light emitting diode construction according to claim 1 is characterized in that, described light emitting diode construction also comprises a resilient coating (29), and described resilient coating is formed between described substrate (21) and the described n type semiconductor layer (22).
8. light emitting diode construction according to claim 7 is characterized in that, the thickness of described resilient coating (29) is between between the 1nm to 200nm.
9. light emitting diode construction according to claim 1, it is characterized in that any in the group that the optional free oxidation aluminium of the material of described substrate (21), aluminium nitride, gallium nitride, magnesium oxide, zinc oxide, carborundum, silicon, lithia gallium and aluminium oxide lithium are formed.
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| CN 201010159594 CN102237455B (en) | 2010-04-27 | 2010-04-27 | LED structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465910A (en) * | 2014-12-17 | 2015-03-25 | 广东德力光电有限公司 | LED chip structure efficiently matched with ZnO thin film and manufacturing method of LED chip structure |
| CN105679901A (en) * | 2016-03-04 | 2016-06-15 | 华灿光电股份有限公司 | Novel light emitting diode epitaxial wafer and preparation method therefor |
| CN106025032A (en) * | 2016-06-21 | 2016-10-12 | 华灿光电(苏州）有限公司 | Epitaxial wafer of light-emitting diode and growing method thereof |
| CN110998873A (en) * | 2017-06-29 | 2020-04-10 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
| CN111477727A (en) * | 2020-04-30 | 2020-07-31 | 厦门乾照光电股份有限公司 | A kind of LED chip with improved current spreading layer and manufacturing method |
| CN113851927A (en) * | 2021-09-18 | 2021-12-28 | 常州纵慧芯光半导体科技有限公司 | Semiconductor laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465910A (en) * | 2014-12-17 | 2015-03-25 | 广东德力光电有限公司 | LED chip structure efficiently matched with ZnO thin film and manufacturing method of LED chip structure |
| CN105679901A (en) * | 2016-03-04 | 2016-06-15 | 华灿光电股份有限公司 | Novel light emitting diode epitaxial wafer and preparation method therefor |
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| CN110998873A (en) * | 2017-06-29 | 2020-04-10 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
| CN110998873B (en) * | 2017-06-29 | 2023-05-23 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
| CN111477727A (en) * | 2020-04-30 | 2020-07-31 | 厦门乾照光电股份有限公司 | A kind of LED chip with improved current spreading layer and manufacturing method |
| CN113851927A (en) * | 2021-09-18 | 2021-12-28 | 常州纵慧芯光半导体科技有限公司 | Semiconductor laser |
| CN113851927B (en) * | 2021-09-18 | 2023-12-08 | 常州纵慧芯光半导体科技有限公司 | Semiconductor laser |
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| CN102237455B (en) | 2013-03-13 |
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