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CN102227093A - Polarity switching circuit of power supply - Google Patents

Polarity switching circuit of power supply Download PDF

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Publication number
CN102227093A
CN102227093A CN2011101579484A CN201110157948A CN102227093A CN 102227093 A CN102227093 A CN 102227093A CN 2011101579484 A CN2011101579484 A CN 2011101579484A CN 201110157948 A CN201110157948 A CN 201110157948A CN 102227093 A CN102227093 A CN 102227093A
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China
Prior art keywords
oxide
semiconductor
metal
power supply
voltage
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CN2011101579484A
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Chinese (zh)
Inventor
董建国
尤晓波
周伯友
林万炯
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Individual
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Individual
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Priority to CN2011101579484A priority Critical patent/CN102227093A/en
Publication of CN102227093A publication Critical patent/CN102227093A/en
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Abstract

The invention relates to a polarity switching circuit of a power supply, which is characterized by comprising four MOS (metal oxide semiconductor) tubes, four voltage-regulator tubes and two resistors, wherein drain electrodes of the first and the third MOS tubes are connected with a first pole of an input power supply; drain electrodes of the second and fourth MOS tubes are connected with a second pole of the input power supply; a grid electrode of the first MOS tube is connected with the first voltage-regulator tube and then the second pole of the input power supply; a source electrode of the first MOS tube is connected with the first resistor and then the first pole of the input power supply; a grid electrode of the third MOS tube is connected with the third voltage-regulator tube and then the second pole of the input power supply; a source electrode of the third MOS tube is connected with the second resistor and then the second pole of the input power supply; a grid electrode of the second MOS tube is connected with the second voltage-regulator tube and then the first pole of the input power supply; a grid electrode of the fourth MOS tube is connected with the fourth voltage-regulator tube and then the first pole of the input power supply; and a source electrode of the second MOS tube and a source electrode of the fourth MOS tube are the first pole and the second pole of the input power supply respectively. The polarity switching circuit of the power supply is low in circuit loss, low in radiation and small in differential pressure.

Description

A kind of electric power polarity change-over circuit
Technical field
The present invention relates to a kind of electric power polarity change-over circuit.
Background technology
Several electric power polarity change-over circuits commonly used at present have:
1, utilize bridge heap or diode to realize the automatic switching circuit of input polarity, the input of sort circuit, output pressure reduction are bigger, and heating is high.
2, utilize relay to realize the automatic switching circuit of polarity, the common volume of sort circuit is bigger.
3, utilize metal-oxide-semiconductor to realize polarity switching, as shown in Figure 2, the cut-in voltage of this circuit requirement metal-oxide-semiconductor must be higher than input voltage, otherwise can damage metal-oxide-semiconductor.Its scope of application just is restricted.The input voltage of existing a lot of products is 24V, and the cut-in voltage of a lot of metal-oxide-semiconductors of using always is ± 20V, so this circuit just can not use.
Summary of the invention
Technical problem to be solved by this invention is to provide the electric power polarity that a kind of loss is low, heating is low, pressure reduction is little change-over circuit at above-mentioned prior art.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: this electric power polarity change-over circuit, it is characterized in that: comprise first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, first voltage-stabiliser tube, second voltage-stabiliser tube, the 3rd voltage-stabiliser tube, the 4th voltage-stabiliser tube, first resistance, second resistance, wherein, the drain electrode of first metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor all extremely links to each other with first of input power supply, and the drain electrode of second metal-oxide-semiconductor, the 4th metal-oxide-semiconductor all extremely links to each other with second of input power supply; The grid of first metal-oxide-semiconductor links to each other with the negative electrode of first voltage-stabiliser tube, and the anode of first voltage-stabiliser tube extremely links to each other with second of input power supply; The source electrode of first metal-oxide-semiconductor links to each other with first end of first resistance, and second end of first resistance extremely links to each other with first of input power supply; The grid of the 3rd metal-oxide-semiconductor links to each other with the anode of the 3rd voltage-stabiliser tube, and the negative electrode of the 3rd voltage-stabiliser tube extremely links to each other with second of input power supply; The source electrode of the 3rd metal-oxide-semiconductor links to each other with first end of second resistance, and second end of second resistance extremely links to each other with second of input power supply; The grid of second metal-oxide-semiconductor links to each other with the negative electrode of second voltage-stabiliser tube, and the anode of second voltage-stabiliser tube extremely links to each other with first of input power supply; The grid of the 4th metal-oxide-semiconductor links to each other with the anode of the 4th voltage-stabiliser tube, and the negative electrode of the 4th voltage-stabiliser tube extremely links to each other with first of input power supply; The source electrode of second metal-oxide-semiconductor is first utmost point of out-put supply, and the source electrode of the 4th metal-oxide-semiconductor is second utmost point of out-put supply.
Described first metal-oxide-semiconductor, second metal-oxide-semiconductor are the PMOS pipe, and described the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor are the NMOS pipe.
Compared with prior art, the invention has the advantages that: increased by four voltage-stabiliser tubes, the cut-in voltage that can guarantee metal-oxide-semiconductor is within requiring, and circuit loss provided by the invention is little, and it is low to generate heat, and pressure reduction is little, is specially adapted in the circuit of big electric current.
Description of drawings
Fig. 1 is the circuit diagram of electric power polarity change-over circuit in the embodiment of the invention.
Fig. 2 is a circuit diagram of realizing the electric power polarity conversion in the prior art with metal-oxide-semiconductor.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Referring to electric power polarity change-over circuit shown in Figure 1, comprise the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4, the first voltage-stabiliser tube D1, the second voltage-stabiliser tube D2, the 3rd voltage-stabiliser tube D3, the 4th voltage-stabiliser tube D4, first resistance R 1, second resistance R 2, wherein, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 is the PMOS pipe, described the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 is the NMOS pipe, the first metal-oxide-semiconductor Q1, the drain electrode of the 3rd metal-oxide-semiconductor Q3 all extremely links to each other the second metal-oxide-semiconductor Q2 with first of input power supply, the drain electrode of the 4th metal-oxide-semiconductor Q3 all extremely links to each other with second of input power supply; The grid of the first metal-oxide-semiconductor Q1 links to each other with the negative electrode of the first voltage-stabiliser tube D1, and the anode of the first voltage-stabiliser tube D1 extremely links to each other with second of input power supply; The source electrode of the first metal-oxide-semiconductor Q1 links to each other with first end of first resistance R 1, and second end of first resistance R 1 extremely links to each other with first of input power supply; The grid of the 3rd metal-oxide-semiconductor Q3 links to each other with the anode of the 3rd voltage-stabiliser tube D3, and the negative electrode of the 3rd voltage-stabiliser tube D3 extremely links to each other with second of input power supply; The source electrode of the 3rd metal-oxide-semiconductor Q3 links to each other with first end of second resistance R 2, and second end of second resistance R 2 extremely links to each other with second of input power supply; The grid of the second metal-oxide-semiconductor Q2 links to each other with the negative electrode of the second voltage-stabiliser tube D2, and the anode of the second voltage-stabiliser tube D2 extremely links to each other with first of input power supply; The grid of the 4th metal-oxide-semiconductor Q4 links to each other with the anode of the 4th voltage-stabiliser tube D4, and the negative electrode of the 4th voltage-stabiliser tube D4 extremely links to each other with first of input power supply; The source electrode of the second metal-oxide-semiconductor Q2 is first utmost point of out-put supply, and the source electrode of the 4th metal-oxide-semiconductor Q4 is second utmost point of out-put supply.
First of above-mentioned input power supply extremely can be for positive pole also can be negative pole, and second of above-mentioned input power supply extremely can be for negative pole also can be positive pole, second negative pole very of first very anodal, the out-put supply of out-put supply.
The realization function of this circuit:, still go up under " bearing " " just " no matter input voltage is under last " just " " bearing "; Output all is under last " just " " bearing ".

Claims (2)

1. electric power polarity change-over circuit, it is characterized in that: comprise first metal-oxide-semiconductor (Q1), second metal-oxide-semiconductor (Q2), the 3rd metal-oxide-semiconductor (Q3), the 4th metal-oxide-semiconductor (Q4), first voltage-stabiliser tube (D1), second voltage-stabiliser tube (D2), the 3rd voltage-stabiliser tube (D3), the 4th voltage-stabiliser tube (D4), first resistance (R1), second resistance (R2), wherein, the drain electrode of first metal-oxide-semiconductor (Q1), the 3rd metal-oxide-semiconductor (Q3) all extremely links to each other with first of input power supply, and the drain electrode of second metal-oxide-semiconductor (Q2), the 4th metal-oxide-semiconductor (Q3) all extremely links to each other with second of input power supply; The grid of first metal-oxide-semiconductor (Q1) links to each other with the negative electrode of first voltage-stabiliser tube (D1), and the anode of first voltage-stabiliser tube (D1) extremely links to each other with second of input power supply; The source electrode of first metal-oxide-semiconductor (Q1) links to each other with first end of first resistance (R1), and second end of first resistance (R1) extremely links to each other with first of input power supply; The grid of the 3rd metal-oxide-semiconductor (Q3) links to each other with the anode of the 3rd voltage-stabiliser tube (D3), and the negative electrode of the 3rd voltage-stabiliser tube (D3) extremely links to each other with second of input power supply; The source electrode of the 3rd metal-oxide-semiconductor (Q3) links to each other with first end of second resistance (R2), and second end of second resistance (R2) extremely links to each other with second of input power supply; The grid of second metal-oxide-semiconductor (Q2) links to each other with the negative electrode of second voltage-stabiliser tube (D2), and the anode of second voltage-stabiliser tube (D2) extremely links to each other with first of input power supply; The grid of the 4th metal-oxide-semiconductor (Q4) links to each other with the anode of the 4th voltage-stabiliser tube (D4), and the negative electrode of the 4th voltage-stabiliser tube (D4) extremely links to each other with first of input power supply; The source electrode of second metal-oxide-semiconductor (Q2) is first utmost point of out-put supply, and the source electrode of the 4th metal-oxide-semiconductor (Q4) is second utmost point of out-put supply.
2. according to the described electric power polarity change-over circuit of claim 1, it is characterized in that: described first metal-oxide-semiconductor (Q1), second metal-oxide-semiconductor (Q2) are the PMOS pipe, and described the 3rd metal-oxide-semiconductor (Q3), the 4th metal-oxide-semiconductor (Q4) are the NMOS pipe.
CN2011101579484A 2011-06-10 2011-06-10 Polarity switching circuit of power supply Pending CN102227093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011101579484A CN102227093A (en) 2011-06-10 2011-06-10 Polarity switching circuit of power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101579484A CN102227093A (en) 2011-06-10 2011-06-10 Polarity switching circuit of power supply

Publications (1)

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CN102227093A true CN102227093A (en) 2011-10-26

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103458547A (en) * 2012-05-31 2013-12-18 海洋王(东莞)照明科技有限公司 Power supply polarity conversion circuit and lamps
CN105174386A (en) * 2015-10-10 2015-12-23 徐名勇 Tap water electrolysis device used for disinfection and sterilization and having electrode descaling function
CN108281996A (en) * 2017-12-29 2018-07-13 西安睿维申电子科技有限公司 A kind of battery positive-negative connected circuit for rectifying
CN112582748A (en) * 2019-09-12 2021-03-30 广州飒特红外股份有限公司 Electrodeless battery box

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101079599A (en) * 2007-06-11 2007-11-28 浙江三维通信股份有限公司 An implementation method and device for quickly responding to switch power amplification
CN201113409Y (en) * 2007-09-20 2008-09-10 徐建华 A polarity switching circuit for a charger
CN201265475Y (en) * 2008-08-26 2009-07-01 比亚迪股份有限公司 Apparatus for ignition voltage stabilization
CN101882860A (en) * 2010-06-23 2010-11-10 山东大学威海分校 Novel insulated gate bipolar translator (IGBT) drive and protection circuit
CN202085069U (en) * 2011-06-10 2011-12-21 林万炯 Power supply polarity conversion circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101079599A (en) * 2007-06-11 2007-11-28 浙江三维通信股份有限公司 An implementation method and device for quickly responding to switch power amplification
CN201113409Y (en) * 2007-09-20 2008-09-10 徐建华 A polarity switching circuit for a charger
CN201265475Y (en) * 2008-08-26 2009-07-01 比亚迪股份有限公司 Apparatus for ignition voltage stabilization
CN101882860A (en) * 2010-06-23 2010-11-10 山东大学威海分校 Novel insulated gate bipolar translator (IGBT) drive and protection circuit
CN202085069U (en) * 2011-06-10 2011-12-21 林万炯 Power supply polarity conversion circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
COWBOY: "《阿莫电子论坛》", 7 June 2009 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103458547A (en) * 2012-05-31 2013-12-18 海洋王(东莞)照明科技有限公司 Power supply polarity conversion circuit and lamps
CN105174386A (en) * 2015-10-10 2015-12-23 徐名勇 Tap water electrolysis device used for disinfection and sterilization and having electrode descaling function
CN108281996A (en) * 2017-12-29 2018-07-13 西安睿维申电子科技有限公司 A kind of battery positive-negative connected circuit for rectifying
CN112582748A (en) * 2019-09-12 2021-03-30 广州飒特红外股份有限公司 Electrodeless battery box

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Application publication date: 20111026