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CN102222896A - Electronic device - Google Patents

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CN102222896A
CN102222896A CN2010101508889A CN201010150888A CN102222896A CN 102222896 A CN102222896 A CN 102222896A CN 2010101508889 A CN2010101508889 A CN 2010101508889A CN 201010150888 A CN201010150888 A CN 201010150888A CN 102222896 A CN102222896 A CN 102222896A
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circuit
control signal
voltage
obstruct
internal circuit
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林志强
林林
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Dongguan Wanshida LCD Co Ltd
Wintek Corp
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Dongguan Wanshida LCD Co Ltd
Wintek Corp
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Priority to CN2010101508889A priority Critical patent/CN102222896A/en
Publication of CN102222896A publication Critical patent/CN102222896A/en
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Abstract

The invention provides an electronic device, which comprises an electrostatic discharge protection circuit, an abnormal voltage detection circuit, an internal circuit and a blocking circuit. The electrostatic discharge protection circuit receives a plurality of input signals, is used for reducing abnormal high voltage generated on a path for transmitting the input signals due to electrostatic discharge, and correspondingly outputs a plurality of input signals after voltage reduction. The input signal includes a control signal group and a data signal group. The abnormal voltage detection circuit is connected with the electrostatic discharge protection circuit. The abnormal voltage detection circuit receives the input signal after voltage reduction and generates a blocking control signal according to the voltage level of the input signal after voltage reduction. The blocking circuit is connected in series between the abnormal voltage detection circuit and the internal circuit and used for receiving the blocking control signal and transmitting the blocking control signal group to the internal circuit according to the blocking control signal.

Description

电子装置electronic device

技术领域technical field

本发明涉及一种电子装置,且特别是涉及一种电子装置的静电放电防护装置。The invention relates to an electronic device, and in particular to an electrostatic discharge protection device for the electronic device.

背景技术Background technique

电子产品于实际使用环境中往往可能会遭受静电放电(electrostaticdischarge,ESD)的冲击。一般而言,静电放电电压较一般所提供的电源电压大出甚多,大致上依静电放电产生的电压程度不同可分为人体放电模式(Human-Body Model,HBM)、机械放电模式(Machine Model,MM)以及充电元件模式(Charge-Device Model,CDM)。然而,无论是何种静电放电模式,静电放电发生时都很有可能会将元件烧毁,因此必须在电路中作一些静电放电防护措施以有效隔离静电放电电流,避免元件损毁。Electronic products may often be impacted by electrostatic discharge (ESD) in the actual use environment. Generally speaking, the electrostatic discharge voltage is much higher than the power supply voltage generally provided. Generally, according to the different voltage levels generated by electrostatic discharge, it can be divided into human-body model (Human-Body Model, HBM), mechanical discharge model (Machine Model) , MM) and charging component mode (Charge-Device Model, CDM). However, no matter what the ESD mode is, it is very likely that the components will be burned when the ESD occurs. Therefore, some ESD protection measures must be taken in the circuit to effectively isolate the ESD current and prevent the components from being damaged.

发明内容Contents of the invention

本发明提供一种电子装置,用以在发生静电放电现象时,有效阻隔异常的数据写入电子装置的内部电路中,避免电子装置产生误动作。The invention provides an electronic device, which is used to effectively block abnormal data from being written into the internal circuit of the electronic device when electrostatic discharge occurs, so as to prevent the electronic device from malfunctioning.

本发明提出一种电子装置,其包括一静电放电防护电路、一异常电压侦测电路、一内部电路以及一阻隔电路。静电放电防护电路接收多数个输入信号,用以降低在传送输入信号的路径上因静电放电现象而产生的异常高电压,并对应输出多数个降压后输入信号。输入信号包括一控制信号组以及一数据信号组。异常电压侦测电路连接静电放电防护电路。异常电压侦测电路接收降压后输入信号,并依据降压后输入信号的电压电平来产生一阻隔控制信号。阻隔电路串接在异常电压侦测电路以及内部电路之间,用以接收阻隔控制信号并依据阻隔控制信号以阻隔控制信号组传输至内部电路。The invention provides an electronic device, which includes an electrostatic discharge protection circuit, an abnormal voltage detection circuit, an internal circuit and a blocking circuit. The electrostatic discharge protection circuit receives a plurality of input signals to reduce the abnormally high voltage generated by electrostatic discharge phenomenon on the path of transmitting the input signals, and correspondingly outputs a plurality of reduced voltage input signals. The input signal includes a control signal group and a data signal group. The abnormal voltage detection circuit is connected to the electrostatic discharge protection circuit. The abnormal voltage detection circuit receives the reduced voltage input signal, and generates a blocking control signal according to the voltage level of the reduced voltage input signal. The isolation circuit is serially connected between the abnormal voltage detection circuit and the internal circuit, and is used for receiving the isolation control signal and transmitting the isolation control signal group to the internal circuit according to the isolation control signal.

在本发明的一实施例中,上述的异常电压侦测电路针对降压后输入信号的电压电平与临界电压进行比较,并以此产生阻隔控制信号。In an embodiment of the present invention, the above-mentioned abnormal voltage detection circuit compares the voltage level of the input signal after voltage reduction with the threshold voltage, and generates a blocking control signal accordingly.

在本发明的一实施例中,当上述的异常电压侦测电路比较出降压后输入信号的至少其中之一的电压电平大于临界电压时,致能阻隔控制信号。在一实施例中,上述的阻隔电路在当阻隔控制信号致能时阻隔控制信号组传输至内部电路。In an embodiment of the present invention, when the above-mentioned abnormal voltage detection circuit compares and finds that the voltage level of at least one of the input signals after voltage reduction is greater than the threshold voltage, the blocking control signal is enabled. In one embodiment, the blocking circuit transmits the blocking control signal group to the internal circuit when the blocking control signal is enabled.

在本发明的一实施例中,当异常电压侦测电路比较出所有的降压后输入信号的电压电平均小于或等于临界电压时,禁能阻隔控制信号。在一实施例中,上述的阻隔电路在当阻隔控制信号禁能时传输控制信号组至内部电路。In an embodiment of the present invention, when the abnormal voltage detection circuit compares and finds that the voltage levels of all the reduced input signals are less than or equal to the threshold voltage, the blocking control signal is disabled. In one embodiment, the blocking circuit transmits the control signal group to the internal circuit when the blocking control signal is disabled.

在本发明的一实施例中,上述的阻隔电路包括至少一个开关。开关串接在异常电压侦测电路对应传输控制信号组的端点与内部电路间,用以依据阻隔控制信号进行关闭以阻隔控制信号组传输至内部电路。In an embodiment of the present invention, the above-mentioned blocking circuit includes at least one switch. The switch is connected in series between the terminal of the abnormal voltage detection circuit corresponding to the transmission control signal group and the internal circuit, and is used for closing according to the blocking control signal to block the transmission of the control signal group to the internal circuit.

在本发明的一实施例中,上述的控制信号组用以控制数据信号组写入内部电路中。In an embodiment of the present invention, the above-mentioned control signal group is used to control the writing of the data signal group into the internal circuit.

在本发明的一实施例中,上述的静电放电防护电路包括多数个静电放电防护单元以及电压箝制电路(power clamp circuit)。其中各静电放电防护单元包括第一二极管以及第二二极管。第一二极管的阳极连接系统电压,而其阴极接收输入信号的其中之一。第二二极管的阳极连接第一二极管的阴极,而其阴极连接接地电压。电压箝制电路则串接在系统电压及接地电压间。In an embodiment of the present invention, the above-mentioned ESD protection circuit includes a plurality of ESD protection units and a power clamp circuit. Each electrostatic discharge protection unit includes a first diode and a second diode. The anode of the first diode is connected to the system voltage, and its cathode receives one of the input signals. The anode of the second diode is connected to the cathode of the first diode, and its cathode is connected to ground voltage. The voltage clamping circuit is connected in series between the system voltage and the ground voltage.

在本发明的一实施例中,上述的内部电路包括寄存器组以及存储器的至少其中之一。In an embodiment of the present invention, the above-mentioned internal circuit includes at least one of a register set and a memory.

在本发明的一实施例中,上述的静电放电防护电路、异常电压侦测电路、阻隔电路以及内部电路都建构在同一芯片上。In an embodiment of the present invention, the above-mentioned electrostatic discharge protection circuit, abnormal voltage detection circuit, blocking circuit and internal circuit are all constructed on the same chip.

在本发明的一实施例中,上述的静电放电防护电路、异常电压侦测电路以及阻隔电路建构在第一芯片上。而内部电路建构在第一芯片外的一第二芯片上。In an embodiment of the present invention, the above-mentioned electrostatic discharge protection circuit, abnormal voltage detection circuit and blocking circuit are constructed on the first chip. And the internal circuit is constructed on a second chip outside the first chip.

基于上述,本发明通过在现有的静电放电防护电路后,还增加异常电压侦测电路来侦测经由静电放电防护电路降压后的降压后输入信号的电压电平是否异常,并依据侦测的结果来阻隔或放行输入信号传输入内部电路中。有效的防止了输入信号因为静电放电现象而对内部电路写入不正确的数据,进而确保电子装置不会发生误动作,提升电子装置的整体表现度。Based on the above, the present invention adds an abnormal voltage detection circuit behind the existing electrostatic discharge protection circuit to detect whether the voltage level of the input signal after stepping down through the electrostatic discharge protection circuit is abnormal, and according to the detection The result of the test is used to block or pass the input signal to the internal circuit. It effectively prevents the input signal from writing incorrect data into the internal circuit due to electrostatic discharge, thereby ensuring that the electronic device will not malfunction and improving the overall performance of the electronic device.

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

附图说明Description of drawings

图1为本发明的一实施例的电子装置的方块示意图;FIG. 1 is a schematic block diagram of an electronic device according to an embodiment of the present invention;

图2为本发明的一实施例的静电放电防护电路的方块示意图。FIG. 2 is a schematic block diagram of an ESD protection circuit according to an embodiment of the present invention.

附图中主要元件符号说明:Explanation of main component symbols in the attached drawings:

100-电子装置;            110-静电放电防护电路;100-electronic device; 110-electrostatic discharge protection circuit;

112-静电放电防护单元;    114-电压箝制电路;112-electrostatic discharge protection unit; 114-voltage clamping circuit;

120-异常电压侦测电路;    130-阻隔电路;120-abnormal voltage detection circuit; 130-blocking circuit;

140-内部电路;            142-寄存器组;140-internal circuit; 142-register set;

144-存储器;144 - memory;

CS、WR、DATA1、DATA2、DATA3-输入信号;CS, WR, DATA1, DATA2, DATA3-input signal;

CSlow、WRlow、DATA1low、DATA2low、DATA3low-降压后输入信号;CS low , WR low , DATA1 low , DATA2 low , DATA3 low - input signal after step-down;

D1、D2-二极管;           SIGcontrol-控制信号组;D1, D2 - diodes; SIG control - control signal group;

SIGdata-数据信号组;      SIGblock-阻隔控制信号;SIG data - data signal group; SIG block - block control signal;

SW-开关;                 V1-系统电压;SW-switch; V1-system voltage;

V2-接地电压。V2 - ground voltage.

具体实施方式Detailed ways

图1为本发明的一实施例的电子装置的方块示意图。请参照图1,本实施例的电子装置100包括一静电放电防护电路110、一异常电压侦测电路120、一阻隔电路130以及一内部电路140。异常电压侦测电路120连接静电放电防护电路110,且阻隔电路130串接在异常电压侦测电路120以及内部电路140之间。实际上,内部电路140可由一寄存器组142以及一存储器144两者的至少其中之一所构成。FIG. 1 is a schematic block diagram of an electronic device according to an embodiment of the present invention. Referring to FIG. 1 , the electronic device 100 of this embodiment includes an electrostatic discharge protection circuit 110 , an abnormal voltage detection circuit 120 , a blocking circuit 130 and an internal circuit 140 . The abnormal voltage detection circuit 120 is connected to the ESD protection circuit 110 , and the blocking circuit 130 is connected in series between the abnormal voltage detection circuit 120 and the internal circuit 140 . Actually, the internal circuit 140 may be constituted by at least one of a register set 142 and a memory 144 .

本实施例的静电放电防护电路110接收多数个输入信号CS、WR、DATA1、DATA2、DATA3、...,其中这些输入信号CS、WR、DATA1、DATA2、DATA3、...可划分为一控制信号组SIGcontrol以及一数据信号组SIGdata两种信号组。在本实施例中,控制信号组SIGcontrol由输入信号CS、WR所构成,而数据信号组SIGdata由输入信号DATA1、DATA2、DATA3、...所构成,其中控制信号组SIGcontrol可用来控制数据信号组SIGdata写入内部电路140中。The electrostatic discharge protection circuit 110 of this embodiment receives a plurality of input signals CS, WR, DATA1, DATA2, DATA3, ..., wherein these input signals CS, WR, DATA1, DATA2, DATA3, ... can be divided into a control There are two signal groups: a signal group SIG control and a data signal group SIG data . In this embodiment, the control signal group SIG control is composed of input signals CS, WR, and the data signal group SIG data is composed of input signals DATA1, DATA2, DATA3, ..., wherein the control signal group SIG control can be used to control The data signal group SIG data is written into the internal circuit 140 .

在本实施例中,在接收输入信号CS、WR、DATA1、DATA2、DATA3、...之后,可对应输出多数个降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...。如此,静电放电防护电路110可用来降低在传送输入信号CS、WR、DATA1、DATA2、DATA3、...的路径上因静电放电(electrostatic discharge,ESD)现象而产生的异常高电压。In this embodiment, after receiving the input signals CS, WR, DATA1, DATA2, DATA3, ..., a plurality of reduced input signals CS low , WR low , DATA1 low , DATA2 low , DATA3 low , .... In this way, the ESD protection circuit 110 can be used to reduce abnormally high voltages generated by electrostatic discharge (ESD) phenomena on the paths transmitting the input signals CS, WR, DATA1, DATA2, DATA3, . . . .

值得一提的是,本实施例的静电放电防护电路110可以由多数个静电放电防护单元112以及一电压箝制电路114所构成,图2为本发明的一实施例的静电放电防护电路的方块示意图,如图2所示,但本发明不以此为限。电压箝制电路114串接在一系统电压V1以及一接地电压V2之间,而每一个静电放电防护单元112包括一二极管D1以及一二极管D2。二极管D1的阳极连接系统电压V1,阴极接收输入信号CS、WR、DATA1、DATA2、DATA3、...的其中之一。二极管D2的阳极连接二极管D1的阴极,而阴极连接接地电压V2。It is worth mentioning that the ESD protection circuit 110 of this embodiment may be composed of a plurality of ESD protection units 112 and a voltage clamping circuit 114. FIG. 2 is a schematic block diagram of an ESD protection circuit according to an embodiment of the present invention. , as shown in FIG. 2 , but the present invention is not limited thereto. The voltage clamping circuit 114 is connected in series between a system voltage V1 and a ground voltage V2, and each ESD protection unit 112 includes a diode D1 and a diode D2. The anode of the diode D1 is connected to the system voltage V1, and the cathode receives one of the input signals CS, WR, DATA1, DATA2, DATA3, . . . The anode of the diode D2 is connected to the cathode of the diode D1, and the cathode is connected to the ground voltage V2.

在本实施例中,异常电压侦测电路120接收降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...,会依据这些降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...的电压电平来产生一阻隔控制信号SIGblock。举例来说,本实施例的异常电压侦测电路120可通过降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...的电压电平与一临界电压进行比较,以进一步产生阻隔控制信号SIGblockIn this embodiment, the abnormal voltage detection circuit 120 receives the reduced voltage input signals CS low , WR low , DATA1 low , DATA2 low , DATA3 low , . . . , DATA1 low , DATA2 low , DATA3 low , . . . to generate a blocking control signal SIG block . For example, the abnormal voltage detection circuit 120 of this embodiment can compare the voltage levels of the input signals CS low , WR low , DATA1 low , DATA2 low , DATA3 low , . . . with a threshold voltage after voltage reduction, to further generate the blocking control signal SIG block .

在本实施例中,阻隔电路130用以接收阻隔控制信号SIGblock,且阻隔电路130可依据阻隔控制信号SIGblock来阻隔控制信号组SIGcontrol传输至内部电路140。实际上,阻隔电路130可由至少一开关SW所构成,其中开关SW串接在异常电压侦测电路120对应传输控制信号组SIGcontrol的端点与内部电路140之间。In this embodiment, the blocking circuit 130 is used for receiving the blocking control signal SIG block , and the blocking circuit 130 can block the transmission of the control signal group SIG control to the internal circuit 140 according to the blocking control signal SIG block . Actually, the blocking circuit 130 can be composed of at least one switch SW, wherein the switch SW is connected in series between the terminal of the abnormal voltage detection circuit 120 corresponding to the transmission control signal group SIG control and the internal circuit 140 .

基于上述,当异常电压侦测电路120比较出降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...的至少其中之一的电压电平大于临界电压时,则致能阻隔控制信号SIGblock。在本实施例中,阻隔电路130在当阻隔控制信号SIGblock致能时,开关SW进行关闭以阻隔控制信号组SIGcontrol传输至内部电路140。Based on the above, when the abnormal voltage detection circuit 120 compares that the voltage level of at least one of the reduced input signals CS low , WR low , DATA1 low , DATA2 low , DATA3 low , . . . is greater than the critical voltage, then Enable block control signal SIG block . In this embodiment, when the blocking control signal SIG block is enabled, the blocking circuit 130 closes the switch SW to block the transmission of the control signal group SIG control to the internal circuit 140 .

反之,当异常电压侦测电路120比较出所有的降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...的电压电平均小于或等于临界电压时,则禁能阻隔控制信号SIGblock。在本实施例中,阻隔电路130在阻隔控制信号SIGblock禁能时,对开关SW进行开启以传输控制信号组SIGcontrol至内部电路140。Conversely, when the abnormal voltage detection circuit 120 finds that the voltage levels of all the input signals CS low , WR low , DATA1 low , DATA2 low , DATA3 low , . Block control signal SIG block . In this embodiment, the blocking circuit 130 turns on the switch SW to transmit the control signal group SIG control to the internal circuit 140 when the blocking control signal SIG block is disabled.

由上述可清楚得知,本实施例通过异常电压侦测电路120的设置,可侦测静电放电防护电路110所输出的降压后输入信号CSlow、WRlow、DATA1low、DATA2low、DATA3low、...的电压电平,并进一步依据侦测的结果来阻隔或放行输入信号CS、WR、DATA1、DATA2、DATA3、...传输入内部电路中,如此可有效避免输入信号因为静电放电现象而对内部电路140写入不正确的数据。It can be clearly seen from the above that the present embodiment can detect the reduced input signals CS low , WR low , DATA1 low , DATA2 low , and DATA3 low output by the electrostatic discharge protection circuit 110 through the setting of the abnormal voltage detection circuit 120 , ... voltage levels, and further block or release input signals CS, WR, DATA1, DATA2, DATA3, ... to be transmitted into the internal circuit according to the detection results, so that the input signals can be effectively avoided due to electrostatic discharge Incorrect data is written to the internal circuit 140 due to a phenomenon.

最后一提的是,在实际产品的应用上,可将静电放电防护电路110、异常电压侦测电路120以及阻隔电路130建构在一芯片上,而将内部电路140建构在另一芯片上;例如,内部电路140设置于显示面板(未示出)上的某一芯片上,而静电放电防护电路110、异常电压侦测电路120以及阻隔电路130设置于显示面板之外。或者,将静电放电防护电路110、异常电压侦测电路120、阻隔电路130以及内部电路140都建构在同一芯片上,例如静电放电防护电路110、异常电压侦测电路120、阻隔电路130以及内部电路140都一同设置于显示面板上的某一芯片上。Finally, in the application of actual products, the electrostatic discharge protection circuit 110, the abnormal voltage detection circuit 120 and the blocking circuit 130 can be constructed on one chip, and the internal circuit 140 can be constructed on another chip; for example The internal circuit 140 is disposed on a certain chip on the display panel (not shown), and the electrostatic discharge protection circuit 110, the abnormal voltage detection circuit 120 and the blocking circuit 130 are disposed outside the display panel. Alternatively, the electrostatic discharge protection circuit 110, the abnormal voltage detection circuit 120, the blocking circuit 130 and the internal circuit 140 are all constructed on the same chip, such as the electrostatic discharge protection circuit 110, the abnormal voltage detection circuit 120, the blocking circuit 130 and the internal circuit 140 are all arranged on a certain chip on the display panel.

综上所述,本发明的电子装置中增设异常电压侦测电路,来侦测经由静电放电防护电路降压后的降压后输入信号的电压电平是否异常。不仅如此,异常电压侦测电路还可据侦测的结果来阻隔或放行输入信号传输入内部电路中,此举可使输入信号因静电放电现象而对内部电路写入不正确数据的问题获得解决。如此一来,本发明的电子装置因静电放电现象而产生的误动作便可避免,因而整体品质随之提升。To sum up, an abnormal voltage detection circuit is added to the electronic device of the present invention to detect whether the voltage level of the reduced input signal after being reduced by the electrostatic discharge protection circuit is abnormal. Not only that, the abnormal voltage detection circuit can also block or release the input signal from the internal circuit according to the detection result, which can solve the problem that the input signal writes incorrect data to the internal circuit due to electrostatic discharge. . In this way, the malfunction of the electronic device of the present invention due to electrostatic discharge can be avoided, and thus the overall quality is improved accordingly.

虽然本发明已以实施例揭示如上,然而其并非用以限定本发明,任何所属技术领域中的普通技术人员,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当视所附的权利要求所界定者为准。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims (10)

1. electronic installation comprises:
One electrostatic storage deflection (ESD) protection circuit, receive most input signals, in order to be reduced in the abnormally high-voltage that produces because of the static discharge phenomenon on the path of transmitting described input signal, and input signal after most step-downs of corresponding output, described input signal comprises a control signal group and a data signal group;
One abnormal voltage circuit for detecting connects this electrostatic storage deflection (ESD) protection circuit, receives input signal after the described step-down, and produces one according to the voltage level of input signal after the described step-down and intercept control signal;
One internal circuit; And
One intercepts circuit, is serially connected between this abnormal voltage circuit for detecting and this internal circuit, in order to receiving this obstruct control signal, and transfers to this internal circuit according to this obstruct control signal to intercept this control signal group.
2. electronic installation according to claim 1, wherein this abnormal voltage circuit for detecting at described step-down after the voltage level and a critical voltage of input signal compare, and produce this obstruct control signal with this.
3. electronic installation according to claim 2, when wherein one of them the voltage level at least of input signal is greater than this critical voltage after this abnormal voltage circuit for detecting compares described step-down, activation should intercept control signal, and this obstruct circuit intercepts this control signal group and transfers to this internal circuit when this obstruct control signal activation the time.
4. electronic installation according to claim 2, when wherein the voltage level of input signal all is less than or equal to this critical voltage after this abnormal voltage circuit for detecting compares all described step-downs, forbidden energy should intercept control signal, and this obstruct circuit transmits this control signal group to this internal circuit when this obstruct control signal forbidden energy the time.
5. electronic installation according to claim 1, wherein this obstruct circuit comprises:
At least one switch is serially connected between the end points and this internal circuit of this control signal group of the corresponding transmission of this abnormal voltage circuit for detecting, transfers to this internal circuit in order to close according to this obstruct control signal to intercept this control signal group.
6. electronic installation according to claim 1, wherein this control signal group writes in this internal circuit in order to control this data signal group.
7. electronic installation according to claim 1, wherein this electrostatic storage deflection (ESD) protection circuit comprises:
A most electrostatic discharge protective unit, respectively this electrostatic discharge protective unit comprises:
One first diode, its anode connects a system voltage, and its negative electrode receives one of them of described input signal; And
One second diode, its anode connects the negative electrode of this first diode, and its negative electrode connects an earthed voltage; And
One voltage clamping circuit is serially connected between this system voltage and this earthed voltage.
8. electronic installation according to claim 1, wherein this internal circuit comprise a registers group and a memory at least one of them.
9. electronic installation according to claim 1, wherein this electrostatic storage deflection (ESD) protection circuit, this abnormal voltage circuit for detecting, this obstruct circuit and this internal circuit all are built on the same chip.
10. electronic installation according to claim 1, wherein this electrostatic storage deflection (ESD) protection circuit, this abnormal voltage circuit for detecting and this obstruct circuit are built on one first chip, and this internal circuit is built on the one second outer chip of this first chip.
CN2010101508889A 2010-04-13 2010-04-13 Electronic device Pending CN102222896A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1998120A (en) * 2004-06-08 2007-07-11 沙诺夫公司 Method and apparatus for providing current controlled electrostatic discharge protection
US20090109587A1 (en) * 2007-10-26 2009-04-30 Caterpillar Inc. Over voltage protection for reduced level electrical signal interfaces
US20090303646A1 (en) * 2008-06-06 2009-12-10 Raydium Semiconductor Corporation Controlling appratus and controlling method for signal outputing circuit and video system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1998120A (en) * 2004-06-08 2007-07-11 沙诺夫公司 Method and apparatus for providing current controlled electrostatic discharge protection
US20090109587A1 (en) * 2007-10-26 2009-04-30 Caterpillar Inc. Over voltage protection for reduced level electrical signal interfaces
US20090303646A1 (en) * 2008-06-06 2009-12-10 Raydium Semiconductor Corporation Controlling appratus and controlling method for signal outputing circuit and video system

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Application publication date: 20111019