CN102221429A - High-temperature pressure and temperature compounded sensor and preparation method thereof - Google Patents
High-temperature pressure and temperature compounded sensor and preparation method thereof Download PDFInfo
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- CN102221429A CN102221429A CN 201110161243 CN201110161243A CN102221429A CN 102221429 A CN102221429 A CN 102221429A CN 201110161243 CN201110161243 CN 201110161243 CN 201110161243 A CN201110161243 A CN 201110161243A CN 102221429 A CN102221429 A CN 102221429A
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- 229910052697 platinum Inorganic materials 0.000 claims abstract description 69
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Abstract
The invention provides a high-temperature pressure and temperature compounded sensor and a preparation method thereof. The invention improves the structure of the previous patent of the inventor: silicon sapphire force sensor and the preparation method thereof. The manufacturing method comprises the following steps of manufacturing a platinum thermal resistor having same materials with a strain resistance leading-through platinum welding disc and a platinum welding disc of an internal leading-through at one corner of a non-stress area on a same sapphire wafer with a silicon strain resistor; adopting a welding metal foil strip to replace the original elastic metal contact or the internal leading-through in other forms, thus preparing the high-temperature pressure and temperature compounded sensor with strong vibration resistance and large acceleration resistance. The method solves the problem that the high reliability can not be met when the pressure and the temperature are measured at a same point in the prior art. The high-temperature pressure and temperature compounded sensor remains the advantages of the existing silicon sapphire force sensor; furthermore, compared with the similar product, the high-temperature pressure and temperature compounded sensor has the advantages of more reasonable manufacturing technology, quick operation, low relative cost, high production efficiency and the like, and obviously improves the high reliability of the measurement under the severe conditions.
Description
Technical field
The present invention relates to sensor of a kind of gaging pressure and temperature and preparation method thereof, particularly a kind of measured mediums such as liquid or gas that are applicable to are more than the high acceleration 40g, under the environmental baseline of high temperature below 400 ℃, simultaneously the high temperature pressure of same-point measurement and the compound sensor and the preparation method of temperature.
Background technology
The scientific worker knows, be used for the pressure of measured mediums such as liquid or gas and the same-point measurement of temperature, under special measurement environment such as spaceship, aircraft, bullet train, rocket (guided missile), nuclear reactor, it is very important and necessary that measuring reliability requires.But existing sensor is not only being made on the precision, and the more important thing is under mal-conditions such as high acceleration, high temperature, intense radiation, strong vibration, does not satisfy the requirement of measuring reliability far away.A lot of professionals, all one's life is all in the method for seeking perfectly to solve foregoing problems.Fortunately at present in the world, high-purity alundum (Al (Al
2O
3) the γ monocrystal, promptly Mohs value reaches 9.0, and response frequency reaches 5 * 10
18The sapphire single-crystal body of Hz, it is more satisfactory and be close to perfect high resiliency high temperature crystal to have become the quick and heat sensitive sensor of manufacturing power.It can epitaxial growth go out monocrystalline silicon, and metals such as very easily same again titanium, platinum are affine, and its thermal expansivity mates with titanium and exhausted big number titanium alloy in-196 ℃～400 ℃ warm areas very much.This has brought convenience for the high standard sealing-in operation of making sensor.But still there are a lot of difficult problems and difficulty aspect structural design and the technology making.The problem that the inventor once was difficult to overcome at the processing technology more complicated of existing silicon saphire force-sensitive sensor etc., utilize modern manufacturing process and new method of thinking, produced with it and to be applicable to pyrometric silicon saphire force-sensitive sensor, seen patent announcement number patent of invention for details for CN1172169C " silicon saphire force-sensitive sensor and preparation method ".This manufacture craft is the sapphire wafer that epitaxial growth is had monocrystalline silicon membrane, with electrostatic sealing-in or use the molecular linkage method, be sealed on the titanium alloy stress cup, with titanium alloy stress cup symcenter is benchmark, laser carves the silicon strain resistor, on the platinum dish of silicon strain resistor, connect lead-in wire, encapsulate the connection outer lead, make this sensor Applicable temperature reach-196 ℃～400 ℃ with the metallic elastic contact.Though this sensor has solved problems such as heatproof, " contact " weares and teares easily and lost efficacy under strong vibration and high acceleration.Also can't resolve simultaneously the same-point measurement problem of pressure and temperature.For solving the same-point measurement problem, people attempt pressure transducer and temperature sensor are merged binding, as Pt100 platinum temperature sensor is bundled into pressure transducer.But there is following problem in it: 1, volume is big, and it is many to take up room; 2, structure is not compact, and thermometric separates with pressure tap; 3, thermometric original paper and measuring point have the gap, and thermometric easily lags behind or indeterminacy.Cling temperature sensor if add medium such as glue, can bring electric leakage again, particularly high temperature electric leakage also exists temperature coefficient not match, and the possibility of inefficacy is arranged; 4, lead-in wire intractable, generally not antivibration and not Chinese People's Anti-Japanese Military and Political College's acceleration; 5, adaptive temperature is not enough; 6, the bad solution of Insulation Problems, outer lead is bad fixing, and vibration strength is not enough or the like.Therefore, the existing sensor high reliability request that do not satisfy same-point measurement far away and under mal-condition, measure.
Summary of the invention
The compound sensor and the preparation method that the purpose of this invention is to provide a kind of high temperature pressure and temperature, it has solved the high reliability problem that does not satisfy same-point measurement pressure and temperature that prior art exists, it not only keeps the advantage of existing silicon saphire force-sensitive sensor, and compared with similar products, it is more reasonable to have manufacturing process, swift to operate, and relative cost is low, the characteristics that production efficiency is high have significantly improved the high reliability of measuring under mal-condition.
The technical solution adopted in the present invention is: the compound sensor of this high temperature pressure and temperature comprises and utilizes electrostatic sealing-in or molecular linkage sapphire wafer and titanium alloy stress cup together, outer lead and titanium alloy casing, its technical essential is: with the centralized positioning of titanium alloy stress cup axis of symmetry, an a corner, non-stressed zone that is manufactured with in the stressed zone on the same sapphire wafer of silicon strain resistor and platinum pad is provided with the platinum thermistor, the inner chamber that is welded on the titanium fixed claw on the titanium alloy stress cup utilizes the silver-bearing copper layer to be sealed with the insulator pin change-over panel of band P.e.c., on the platinum pad that chaff one end of internal lead is welded on respectively with silicon strain resistor and platinum thermistor are connected, the chaff other end welds together with the insulator pin change-over panel that is fixed with outer lead.
P.e.c. on the described insulator pin change-over panel is to make like this: at first prefabricated insulator pin change-over panel, again the lead-in wire on this insulator pin change-over panel, through wires hole are reached and titanium fixed claw sealing-in surface, all carrying out tungsten metallization thick-film technique handles, on the tungsten layer of metallized film, print palladium-silver lead-in wire slurry, at vacuum, 900 ℃ of following sintering, the desired palladium-silver lead pad of outer lead, through wires hole, lead-in wire form complete P.e.c. in making on the tungsten layer of metallized film of insulator pin change-over panel.
The preparation method of the compound sensor of above-mentioned high temperature pressure and temperature comprises following operation steps:
Internal lead platinum pad window on step 1, the photoetching sapphire wafer
With the sapphire wafer of epitaxial monocrystalline silicon, use the high temperature wet silicon oxide surface, form fine and close SiO
2Layer; With titanium alloy stress cup internal diameter is the location, stressed zone, by designing requirement, makes the internal lead platinum pad locations of silicon strain resistor and the position of making platinum thermistor and internal lead platinum pad at an a corner, non-stressed zone in presumptive area, carries out photoetching; Carve silicon strain resistor internal lead platinum pad window, expose silicon face, simultaneously, carve the window of platinum thermistor and internal lead platinum pad, expose the sapphire surface that is fit to do platinum thermistor and internal lead platinum pad;
With the sapphire wafer scribing of good platinum pad of sputter and platinum thermistor, under 400 ℃ of temperature,, add the 2000V.DC electric field at high vacuum environment, sapphire wafer sapphire face is sealed on the titanium alloy stress cup;
Carve on the resistance machine at laser, with the centralized positioning of titanium alloy stress cup axis of symmetry, determine stressed zone and non-stressed zone, sapphire wafer there is a leveling of internal lead platinum pad face, silicon strain resistor at monocrystalline silicon crystal orientation quarter at first press in the location in the stressed zone, the internal lead platinum pad of silicon strain resistor is linked up, make resistance bridge, repair in non-stressed zone and access the platinum thermistor;
First prefabricated insulator pin change-over panel, again with the lead-in wire on the insulator pin change-over panel, through wires hole and with the sealing surface of titanium fixed claw, all make the tungsten metalized film; Under vacuum, 900 ℃ of high temperature, on the tungsten layer of metallized film of insulator pin change-over panel, make palladium-silver lead pad and trace layer, make P.e.c.; The insulator pin change-over panel that will have P.e.c. under vacuum, 700 ℃, is connected on the titanium fixed claw with the silver-bearing copper layer, and outer lead, is welded on the insulator pin change-over panel as chaff one end of internal lead to the insulator pin change-over panel through the threading eyelet welding;
Advantage and good effect that the present invention has are: because the present invention improves to form on " silicon saphire force-sensitive sensor and preparation method thereof " basis, on same sapphire crystal sheet, make the Silicon pressure of measurement high-temperature medium and the compound sensor of platinum temperature, so both kept the advantage of existing silicon saphire force-sensitive sensor, expand the new function of sensor again, solved the high reliability problem that does not satisfy same-point measurement pressure and temperature that prior art exists.On same sapphire wafer, make the monocrystalline silicon strain resistor bridge and the platinum thermistor of measuring pressure (power); The platinum thermistor is compatible fully in the technological process of manufacturing process and existing patent " silicon saphire force-sensitive sensor and preparation technology " manufacturing foil gauge; Replace the elastic metallic contact with chaff, shearing resistance, tension, unstressed are realizing resistant to elevated temperatures while, anti-strong vibration and anti-high acceleration; Outer lead spot welding or be soldered to the lead-in wire change-over panel on, point of fixity has been arranged, tension.Compared with similar products, it is more reasonable to have manufacturing process, swift to operate, and cost of manufacture is low relatively, the characteristics that production efficiency is high.Therefore, having significantly improved its high reliability of measuring under mal-condition applies with being beneficial to.
The present invention is as follows from the structure advantage: 1, adopt the Laser Welding (LBW) chaff to connect the platinum pad on the insulator pin change-over panel, outer lead connects in realizing.Benefit is, but the chaff bonding area is big, easily forms alloy, can anti-alloy more than 400 ℃ as palladium-silver chaff and the easy formation of platinode, and the shearing strength height.This structure is because of alloy chafves such as palladium-silvers, and proportion is little, the vibration strength height, determined it than golden aluminium, aluminium aluminium etc. at high nearly 1 order of magnitude of Chinese People's Anti-Japanese Military and Political College's acceleration, vibration strength.Golden aluminium of while, aluminium and constructed of aluminium non-refractory (generally about 150 ℃).
2, on the same sapphire wafer, same plane, almost same point (because titanium alloy stress cup diameter is 3～10mm) pressure measurement and thermometric, has realized with some work.
3, volume is little, and light weight is convenient to special applications such as Aero-Space.
4, temperature tolerance is good, and temperature resistant range depends on integral material.Integral material satisfies-200 ℃ to 400 ℃ warm areas to be used.
5, owing to adopt titanium fixed claw supports insulative lead-in wire change-over panel structure, the integral material temperature coefficient match has again on the structure and isolates and the suspension framework, and therefore, the error that temperature and vibration cause is very little.
6, outer lead passes the fairlead of insulator pin change-over panel, spots weld on the palladium-silver pad of insulator pin change-over panel, and is firm relatively, antivibration not only, Chinese People's Anti-Japanese Military and Political College's acceleration, tension again.
7, because of outer lead has the shielding construction that links to each other with titanium alloy casing, have the external insulation skin, titanium alloy casing has the film fenestra of gauge pressure molecular sieve permeable watertight, and sensor is fit to round-the-clock, has certain anti-electromagnetic interference performance again.
On quick strain resistor of silicon power and platinum thermistor are at the bottom of the same titanium alloy stress cup.Reach the still gapped and space isolation with other structural member between cup and the shell, when measuring, the pressure and the temperature variation of measurement point are little, and silicon strain resistor and platinum thermistor are in same isothermal temperature field, are subjected to ectocine little, have accomplished with putting pressure measurement and thermometric.
Such sensor, force value it goes without doing zero point and full scale temperature compensation, non-linear correction that it goes without doing.The thermometric effect has reached the A grade standard of International Electrotechnical Commission (IEC) standard.Such compound sensor meets specific (special) requirements such as space flight and aviation, nuclear reactor, naval vessel, guidance Tres Haute Vitesse. Ammunition, high ferro, oil well logging fully.Because the present invention uses chemicals hardly, so environmental protection.Because of manufacture craft is compact quick, so cost is lower, the production efficiency height.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is a kind of structural representation of compound sensor of the present invention.
Fig. 2 is a kind of structural representation of titanium fixed claw among Fig. 1;
Fig. 3 is the cut-open view of Fig. 2 along the A-A line;
Fig. 4 is a kind of structural representation of insulator pin change-over panel among Fig. 1;
Fig. 5 is the cut-open view of Fig. 4 along the B-B line;
Fig. 6 is the assembly structure synoptic diagram of insulator pin change-over panel, chaff, titanium fixed claw and outer lead among Fig. 1;
Fig. 7 is silicon strain resistor, the platinum resistance plane distribution synoptic diagram among Fig. 1.
Sequence number explanation among the figure: 1 titanium alloy stress cup, 2 sapphire wafers, 3 silicon strain resistors, 4 platinum pads, 5 chaffs, 6 P.e.c., 7 outer leads, 8 insulator pin change-over panels, 9 titanium fixed claws, 10 silver-bearing copper layers, 11 titanium alloy casings, 12 metallic shield nets, 13 external insulation skins, 14 insulation filler, 15 platinum thermistors.
Embodiment
Describe concrete structure of the present invention and preparation method in detail according to Fig. 1～7.The compound sensor of this high temperature pressure and temperature comprises and utilizes electrostatic sealing-in or molecular linkage sapphire wafer 2 together and parts such as titanium alloy stress cup 1, platinum pad 4, insulator pin change-over panel 8, titanium fixed claw 9, outer lead 7 and titanium alloy casing 11.Wherein with location, the axis of symmetry center (stress cup internal diameter) of titanium alloy stress cup 1, an a corner, non-stressed zone that is manufactured with in the stressed zone on the same sapphire wafer 2 of silicon strain resistor 3 and platinum pad 4 is provided with platinum thermistor 15.Be welded on the inner chamber of the titanium fixed claw 9 on the titanium alloy stress cup 1, utilize silver-bearing copper layer 10 to be sealed with insulator pin change-over panel 8.On the platinum pad 4 that chaff 5 one ends of internal lead are welded on respectively with silicon strain resistor 3 and platinum thermistor 15 are connected, chaff 5 other ends weld together with the insulator pin change-over panel 8 that is fixed with outer lead 7.For guaranteeing reliable connection, adopt existing tungsten metallization thick-film technique, all be manufactured with the tungsten metalized film at the lead-in wire of insulator pin change-over panel 8, palladium-silver lead pad, through wires hole and with titanium fixed claw 9 sealing surfaces etc., on this insulator pin change-over panel 8, make P.e.c. 6.The optional polyimide that the periphery of outer lead 7 is coated with 13(200 ℃ of the inner metallic shield net 12 of loading insulation filler 14 and external insulation skin selects glass fibre to fill the monox sleeve pipe below 400 ℃).Measure detecting sensor lead-in wire platinum pad 4(electrical measurement); Have waterproof and not saturating other organic macromolecule film fenestra of an air permeable with low-grade fever argon arc welding welding titanium alloy shell 11(top).The calibrating mark is finished product.
P.e.c. 6 on the above-mentioned insulator pin change-over panel 8 is to make like this: at first prefabricated insulator pin change-over panel 8, again the lead-in wire on this insulator pin change-over panel 8, through wires hole are reached sealing-in surface with titanium fixed claw 9, all carrying out tungsten metallization thick-film technique handles, on the tungsten layer of metallized film, print palladium-silver lead-in wire slurry, at vacuum, 900 ℃ of following sintering, the desired palladium-silver lead pad of outer lead, through wires hole, lead-in wire form complete P.e.c. 6 in making on the tungsten layer of metallized film of insulator pin change-over panel 8.
The preparation method of the compound sensor of aforementioned high temperature pressure and temperature comprises following operation steps:
Internal lead platinum pad 4 windows on step 1, the photoetching sapphire wafer 2.
With the sapphire wafer 2 of sapphire epitaxial monocrystalline silicon, use the high temperature wet silicon oxide surface, form fine and close SiO
2Layer; By designing requirement, in internal lead platinum pad 4 positions that presumptive area is made silicon strain resistor 3, simultaneously at a corner, non-stressed zone of this same sapphire wafer 2, the reticle chart board is promptly made in the position of making platinum thermistor 15 and internal lead platinum pad 4, carries out photoetching; Carve internal lead platinum pad 4 windows of silicon strain resistor 3, promptly remove corresponding SiO
2Film exposes silicon face, simultaneously, carves the window of platinum thermistor 15 and internal lead platinum pad 4, promptly removes corresponding SiO
2With silicon film, expose the sapphire surface that is fit to do platinum thermistor 15 and internal lead platinum pad 4.
Because what material platinum does not have to corrode it fast, can not make intact figure with traditional planar technology photoetching process.Therefore, adopt mask method, i.e. the figure that sputter is determined, not photoetching is with laser correction (ablation) or reasonable way.The internal lead pad 4 of silicon strain resistor 3, platinum thermistor 15 and internal lead platinum pad 4 adopt condition of equivalent thickness to get final product, and have once spattered just, do not increase operation and cost in the sputter link.It is enough at 1～2 μ m for general thickness.
With of sapphire wafer 2 scribings of the good platinum pad 4 of sputter with platinum thermistor 15.Under 400 ℃ of temperature, in vacuum (1 * 10
-5㎜ Hg) environment adds the 2000V.DC electric field, and sapphire wafer 2 sapphire faces are sealed on the titanium alloy stress cup 1.Surface smoothness and flatness reach 0 grade or I level aperture, 5 minutes time.Sealed, under vacuum, be warmed to 670 ℃ in passing, 30 minutes time, carried out platinum silicon, platinum blue jewel alloying, and eliminate stress.
Carve on the resistance machine at laser,, determine stressed zone and non-stressed zone with the centralized positioning of stress cup axis of symmetry.Sapphire wafer there is the leveling of internal lead pad face, the location.At first press the monocrystalline silicon crystal orientation, carve silicon strain resistor 3, the lead-in wire platinum pad 4 of silicon strain resistor 3 is linked up, measure in real time, make resistance bridge in the stressed zone; After intact, also measure in real time, repair in non-stressed zone and access platinum thermistor 15.
The prefabricated insulator pin change-over panel 8 of elder generation, promptly the sapphire crystal of employing and sapphire wafer 2 homogeneities goes out corresponding structure and surperficial insulator pin change-over panel 8 with gem processor cold working; With the lead-in wire on this insulator pin change-over panel 8, through wires hole and with the sealing surface of titanium fixed claw 9 etc., adopt existing tungsten metallization thick-film technique again, all make the tungsten metalized film; Under vacuum, 900 ℃ of high temperature, on the tungsten layer of metallized film of the through wires hole of insulator pin change-over panel 8, make palladium-silver lead pad and trace layer, make P.e.c. 6.This is had the insulator pin change-over panel 8 of P.e.c. 6, under vacuum, 700 ℃, be welded on the titanium fixed claw 9 with silver-bearing copper layer 10.The periphery of outer lead 7 is surrounded by the bell housing that the inner metallic shield net 12 of loading insulation filler 14 constitutes, and at bell housing the optional polyimide sleeve pipe of 13(200 ℃ of external insulation skin is set, and selects glass fibre to fill the monox sleeve pipe below 400 ℃).Outer lead 7 spots weld through through wires hole on the palladium-silver lead pad of P.e.c. 6 of insulator pin change-over panel 8.Then chaff 5 one ends as internal lead are welded on the palladium-silver pad on the insulator pin change-over panel 8.The titanium fixed claw 9 that utilizes silver-bearing copper layer 10 to be sealed with insulator pin change-over panel 8 inner chamber passes through the low-grade fever argon arc welding, is welded on the titanium alloy stress cup 1.During welding titanium fixed claw 9, necessarily internal lead chaff 5 is aimed at corresponding platinum pad 4.
Soldered joint on the waveguide flexible pipe that laser bonding is used is aimed at the other end (being pressed on the platinum pad 4) as internal lead chaff 5, and miniwatt repeatedly spots weld on the platinum pad 4.Microscopically chaff solder joint surface by the white tangible metal brilliant white (platinum, palladium, silver alloy look) that occurs of porcelain for well.This moment, stretching resistance was more than 50 grams.Burn-oning at last has the waterproof not titanium alloy casing 11 of saturating other organic macromolecule film fenestra that reaches of an air permeable, promptly forms a complete compound sensor.
Claims (3)
1. the compound sensor of high temperature pressure and temperature, comprise and utilize electrostatic sealing-in or molecular linkage sapphire wafer and titanium alloy stress cup together, outer lead and titanium alloy casing, it is characterized in that: with the centralized positioning of titanium alloy stress cup axis of symmetry, an a corner, non-stressed zone that is manufactured with in the stressed zone on the same sapphire wafer of silicon strain resistor and platinum pad is provided with the platinum thermistor, the inner chamber that is welded on the titanium fixed claw on the titanium alloy stress cup utilizes the silver-bearing copper layer to be sealed with the insulator pin change-over panel of band P.e.c., on the platinum pad that chaff one end of internal lead is welded on respectively with silicon strain resistor and platinum thermistor are connected, the chaff other end welds together with the insulator pin change-over panel that is fixed with outer lead.
2. the compound sensor of high temperature pressure according to claim 1 and temperature, it is characterized in that the P.e.c. on the described insulator pin change-over panel is to make like this: at first prefabricated insulator pin change-over panel, again with the lead-in wire on this insulator pin change-over panel, through wires hole reaches and titanium fixed claw sealing-in surface, all carrying out tungsten metallization thick-film technique handles, on the tungsten layer of metallized film, print palladium-silver lead-in wire slurry, in vacuum, 900 ℃ of following sintering, the desired palladium-silver lead pad of outer lead on the tungsten layer of metallized film of insulator pin change-over panel, making, through wires hole, lead-in wire forms complete P.e.c..
3. the preparation method of the compound sensor of described high temperature pressure of claim 1 and temperature is characterized in that comprising following operation steps:
Internal lead platinum pad window on step 1, the photoetching sapphire wafer
With the sapphire wafer of epitaxial monocrystalline silicon, use the high temperature wet silicon oxide surface, form fine and close SiO
2Layer; With titanium alloy stress cup internal diameter is the location, stressed zone, by designing requirement, makes the internal lead platinum pad locations of silicon strain resistor and the position of making platinum thermistor and internal lead platinum pad at an a corner, non-stressed zone in presumptive area, carries out photoetching; Carve silicon strain resistor internal lead platinum pad window, expose silicon face, simultaneously, carve the window of platinum thermistor and internal lead platinum pad, expose the sapphire surface that is fit to do platinum thermistor and internal lead platinum pad;
Step 2, mask sputter platinum are made silicon strain resistor internal lead platinum pad and the platinum layer of platinum thermistor and the platinum pad of internal lead thereof;
Step 3, encapsulation sapphire wafer are to titanium alloy stress cup
With the sapphire wafer scribing of good platinum pad of sputter and platinum thermistor, under 400 ℃ of temperature,, add the 2000V.DC electric field at high vacuum environment, sapphire wafer sapphire face is sealed on the titanium alloy stress cup;
Step 4, with the centralized positioning of titanium alloy stress cup axis of symmetry, carve resistance with laser
Carve on the resistance machine at laser, with the centralized positioning of titanium alloy stress cup axis of symmetry, determine stressed zone and non-stressed zone, sapphire wafer there is a leveling of internal lead platinum pad face, silicon strain resistor at monocrystalline silicon crystal orientation quarter at first press in the location in the stressed zone, the internal lead platinum pad of silicon strain resistor is linked up, make resistance bridge, repair in non-stressed zone and access the platinum thermistor;
Step 5, location dress insulator pin change-over panel are to titanium alloy stress cup base
First prefabricated insulator pin change-over panel, again with the lead-in wire on the insulator pin change-over panel, through wires hole and with the sealing surface of titanium fixed claw, all make the tungsten metalized film; Under vacuum, 900 ℃ of high temperature, on the tungsten layer of metallized film of insulator pin change-over panel, make palladium-silver lead pad and trace layer, make P.e.c.; The insulator pin change-over panel that will have P.e.c. under vacuum, 700 ℃, is connected on the titanium fixed claw with the silver-bearing copper layer, and outer lead, is welded on the insulator pin change-over panel as chaff one end of internal lead to the insulator pin change-over panel through the threading eyelet welding;
Step 6, be soldered on the platinum pad as the other end of internal lead chaff, the titanium alloy casing of burn-oning, the test calibrating promptly becomes the compound sensor of high temperature pressure and temperature.
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