CN102207676B - Method and system for manufacturing semiconductor device by using photoetching technology - Google Patents
Method and system for manufacturing semiconductor device by using photoetching technology Download PDFInfo
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- CN102207676B CN102207676B CN 201010156442 CN201010156442A CN102207676B CN 102207676 B CN102207676 B CN 102207676B CN 201010156442 CN201010156442 CN 201010156442 CN 201010156442 A CN201010156442 A CN 201010156442A CN 102207676 B CN102207676 B CN 102207676B
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Abstract
The invention realizes the improvement of the contrast ratio of an alignment target in a photoetching double-patterning process, and provides a system and method for manufacturing a semiconductor device by using a photoetching technology and manufactured products, relating to the photoetching double-patterning process in which dye is added to a first or a second photoetch pattern. The dye is used for detecting the position of the first photoetch pattern and directly aligning the second photoetch pattern with the first photoetch pattern. The dye can be fluorescent, luminescent, absorptive or reflective within a specific wavelength or given wavelength section. The wavelength can correspond to that of the alignment bundle. The detection of the first photoetch pattern is allowable with respect to the dye even if the dye is covered by a radiosensitive layer.
Description
Technical field
The present invention relates generally to photolithography, and relates more specifically to improve in photoengraving pattern metallization processes (such as double patterning technique) and aim at the mark.
Background technology
Lithographic equipment is a kind of required pattern to be applied on the substrate, normally the machine on the target of the substrate part.For example, lithographic equipment can be used in the manufacturing of integrated circuit (IC).In this case, the patterning device that is called alternatively mask or mask can be used for being created on circuit pattern to be formed on the individual layer of described IC.This design transfer can be arrived on the target part (for example, comprising a part of tube core, one or more tube core) on the substrate (for example, silicon wafer).Usually, the transfer of pattern is to be undertaken by pattern being imaged onto on radiation-sensitive materials (resist) layer that is provided on the substrate.Usually, independent substrate will comprise the network of the adjacent target part that is formed continuously pattern.Known lithographic equipment comprises: so-called stepper, in described stepper, by exposing an entire pattern onto described target each the target part of radiation of partly coming up; And so-called scanner, in described scanner, scan described pattern, come each target part of radiation along the described substrate of scanning direction parallel or antiparallel with this direction simultaneously along assigned direction (" scanning " direction is also referred to as " y direction ") by radiation beam.Also can with by with pattern impression (imprinting) to the mode of substrate from patterning device with design transfer to substrate.
By using double patterning can increase the resolution of optical lithography.Double patterning generally includes two picture group cases.Must accurately aim at first group for second group.Two picture group cases are aimed in the mode that has certain interval in some cases.Aim at this two picture groups case and brought significant challenge, when especially the requirement of semi-conductor industry propose to increase resolution and stricter overlapping the requirement.
Summary of the invention
Embodiments of the invention relate generally to the contrast of improving such as the alignment mark in the photoengraving pattern metallization processes of double patterning technique.
In one embodiment of the invention, provide a kind of method of using photolithography to make semiconductor devices.The method comprises: be added into described the first radiation-sensitive layer with the first radiation-sensitive layer coated substrate with dye composition.Described method also comprises: described the first radiation-sensitive layer is exposed and develops, to form the first photoengraving pattern; Apply described the first photoengraving pattern with the second radiation-sensitive layer; Detect the position of described the first photoengraving pattern; The described substrate of the position alignment that has detected with described the first photoengraving pattern; And described the second radiation-sensitive layer exposed and develop, to form the second photoengraving pattern.Described method is aimed at the second photoengraving pattern with the position that has detected of described the first photoengraving pattern.In an illustrative embodiments, other pattern that dye composition and the first photoengraving pattern have formed diffraction grating, diffraction array, aligned array or be used for aiming at.
In another embodiment of the present invention, described method comprises: with the first radiation-sensitive layer coated substrate; Described the first radiation-sensitive layer is exposed and develops, with in forming the first photoengraving pattern; With apply described the first photoengraving pattern with the second radiation-sensitive layer.Described method also comprises: dye composition is added into described the second radiation-sensitive layer; Detect the position of described the first photoengraving pattern; The described substrate of the position alignment that has detected with described the first photoengraving pattern; With described the second radiation-sensitive layer is exposed and develops, to form the second photoengraving pattern.Described method comprises: the second photoengraving pattern is aimed in the position that has detected with described the first photoengraving pattern.In an illustrative embodiments, other pattern that dye composition and the second photoengraving pattern form diffraction grating, diffraction array, aligned array or be used for aiming at.
The invention still further relates to the goods of manufacturing, it comprises: with the substrate of the first radiation-sensitive layer coating; The first photoengraving pattern that in the first radiation-sensitive layer, forms; With the second radiation-sensitive layer that is used for applying the first radiation-sensitive layer.The first photoengraving pattern or the second radiation-sensitive layer comprise dye composition.Dye composition cooperates with the first photoengraving pattern or the second radiation-sensitive layer, with other pattern that forms diffraction grating, diffraction array, aligned array or be used for aiming at.In an illustrative embodiments, the goods of manufacturing also comprise: the second photoengraving pattern that other pattern that uses diffraction grating, diffraction array, aligned array or be used for aiming at is directly aimed at the first photoengraving pattern.
The invention still further relates to a kind of system that uses photolithography to make semiconductor devices.This system comprises irradiation source, and this irradiation source is used for providing the alignment beams of alignment mark specific wavelength, that be used for reading in double patterning technique.Described system also comprises alignment system, and this alignment system is for detection of being coated in the second radiation-sensitive layer on the first photoengraving pattern or being coated to dye composition among in the first radiation-sensitive layer on the substrate one in described double patterning technique.Based on two patterning step of the described double patterning technique of alignment mark that forms in described the first photoengraving pattern the time, described dye composition is provided at the contrast of the expectation between described the first photoengraving pattern and described the second radiation-sensitive layer.
Description of drawings
Above-mentioned summary of the invention has been set forth many, but is not whole aspect of the present invention.Read with reference to the accompanying drawings the description of various " embodiment " of the present invention by combination, other side of the present invention is apparent to those skilled in the art.When setting forth following embodiment, show by way of example the present invention, but be not restrictive.Element like the similar reference marker representation class in the accompanying drawing.
Figure 1A and 1B illustrate reflective and transmission-type lithographic equipment according to an embodiment of the invention respectively;
Fig. 2 schematically shows lithographic cell according to an embodiment of the invention;
Fig. 3-6 is schematically illustrated in the step in the spacer double patterning technique according to an embodiment of the invention;
Fig. 7 schematically shows the SEM profile in polysilicon that is produced by spacer double patterning technique according to one embodiment of present invention;
Fig. 8-11 schematically shows the according to one embodiment of present invention step in photoetching-etching-photoetching-etching (LELE) double patterning technique;
Figure 12 schematically shows the SEM profile in polysilicon that is produced by LELE double patterning technique according to one embodiment of present invention;
Figure 13-16 schematically shows the step in photoetching-freeze-photoetching-etching (LFLE) double patterning technique according to an embodiment of the invention;
Figure 17 schematically shows the SEM profile in polysilicon that is produced by LFLE double patterning technique according to an embodiment of the invention;
Figure 18 schematically shows the alignment beams of double patterning on stacking that incide according to an embodiment of the invention;
Figure 19 schematically shows the alignment beams of the double patterning of augmenting with dyestuff on stacking that incide according to an embodiment of the invention;
Figure 20 schematically shows the exemplary transmitted spectrum of the photoresist of augmenting with coloured dye according to an embodiment of the invention;
Figure 21 schematically shows the molar extinction coefficient spectrum of merocyanine according to an embodiment of the invention (Merocyanine) 540;
Figure 22 schematically shows the molar extinction coefficient spectrum for thiophene three carbocyanines (C7) dyestuff according to an embodiment of the invention;
Figure 23 schematically shows the process flow diagram be used to the embodiment that method constructed in accordance is shown;
Figure 24 schematically shows the process flow diagram be used to another embodiment that manufacturing method according to the invention is shown; With
Figure 25 schematically show according to an embodiment of the invention for the manufacture of the block scheme of system.
Embodiment
As depicted in the figuresly go out, describe the present invention referring now to the several preferred embodiments of the present invention.In following description, in order to provide comprehensive understanding of the present invention, many details have been set forth.Yet in the situation that there are not some or all these details can implement the present invention, this is apparent to those skilled in the art.In other situation, of the present invention obscure in order to prevent from unnecessarily causing, known processing step is not described in detail.
Similarly, the accompanying drawing that is used for the embodiment of the system that illustrates is semidiagrammatic and schematic, and maps not in scale.In order clearly to show, some sizes are exaggerated.
Can be at the shown equipment of the operation of the direction except situation about going out as shown.In addition, for clear and be convenient to show, describe and its explanation and disclosure and description have in the situation of a plurality of embodiment of some common features, the feature that the class Sihe is identical each other is described with identical reference marker usually.
Figure 1A and 1B schematically show respectively according to an embodiment of the invention lithographic equipment 100 and lithographic equipment 100 '.Each comprises lithographic equipment 100 and lithographic equipment 100 ': irradiation system (irradiator) IL, and its configuration is used for regulating radiation beam B (for example, deep ultraviolet (DUV) radiation or extreme ultraviolet (EUV) radiation); Supporting construction (for example mask platform) MT, it is arranged to and supports patterning device (for example mask, mask or dynamic patterning device) MA, and links to each other for the first locating device PM that accurately locates patterning device MA with configuration; And substrate table (for example, wafer station) WT, it is configured to keep substrate (for example being coated with the wafer of resist) W and is used for accurately with configuration, and the second locating device PW of position substrate W links to each other.Lithographic equipment 100 and lithographic equipment 100 ' also have optical projection system PS, and its configuration is used for being projected to by the pattern that patterning device MA gives radiation beam B the target part C (for example comprising one or more tube core) of substrate W.In lithographic equipment 100, patterning device MA and optical projection system PS are reflective; In lithographic equipment 100 ', patterning device MA and optical projection system PS are transmission-types.
Irradiation system IL can comprise various types of opticses, and for example optics of refractive, reflection-type, magnetic type, electromagnetic type, electrostatic or other type or its combination in any are with guiding, be shaped or control radiation B.
Supporting construction MT keeps patterning device MA with the design of the direction that depends on patterning device MA, lithographic equipment 100 and 100 ' and such as the mode whether patterning device MA remains on medium other condition of vacuum environment.Supporting construction MT can adopt machinery, vacuum, static or other clamping technology keeps patterning device MA.Supporting construction MT can be framework or platform, and for example, it can become fixing or movably as required.Supporting construction MT can guarantee that patterning device MA is positioned at (for example with respect to optical projection system PS) on the desired position.
Term " patterning device " MA should be broadly interpreted as to represent can be used in and give radiation beam B in order to form any device of pattern at the target part C of substrate W with pattern at the xsect of radiation beam.The pattern that is endowed radiation beam B will be corresponding with the specific functional layer in the device that forms at target part C, for example integrated circuit.
Patterning device MA can be transmission-type (for example in the lithographic equipment 100 ' of Figure 1B) or reflective (for example in the lithographic equipment 100 of Figure 1A).The example of patterning device MA comprises mask, mask, array of programmable mirrors and liquid crystal display able to programme (LCD) panel.Mask is known in photolithography, and comprises the mask-type such as binary mask type, Alternating phase-shift mask type, attenuation type phase shifting mask type and various hybrid mask types.The example of array of programmable mirrors adopts the matrix arrangements of small reflector, and each small reflector can tilt independently, in order to reflect the radiation beam of incident along different directions.The radiation beam B that is reflected by described catoptron matrix given pattern by the described catoptron that has tilted.
Term " optical projection system " PS can comprise the optical projection system of any type, comprise refractive, reflection-type, reflection-refraction type, magnetic type, electromagnetic type and electrostatic optical systems or its combination in any, as for employed exposing radiation was fit to or for such as use immersion liquid or use the vacuum other factors was fit to.Vacuum environment can be used for EUV or electron beam irradiation, because other gas may absorb too many radiation or electronics.Therefore, can be under the help of vacuum wall and vacuum pump vacuum environment be offered whole beam path.
Irradiator IL receives the radiation beam that sends from radiation source S O.This source SO and lithographic equipment 100,100 ' can be discrete entities (for example when this source SO is excimer laser).In this case, this source SO can be considered to a part that forms lithographic equipment 100 or 100 ', and the help of the bundle transmission system BD (Figure 1B) by comprising for example suitable directional mirror and/or beam expander is passed to described irradiator IL with radiation beam B from described source SO.In other cases, described source SO can be described lithographic equipment 100,100 ' ingredient (for example when described source SO is mercury lamp).If the described bundle transmission system BD of can be with described source SO and described irradiator IL and arranging when needing is called radiating system together.
Irradiator IL can comprise the adjuster AD (Figure 1B) be used to the angle intensity distributions of adjusting described radiation beam.Usually, can adjust described at least outside and/or the inner radial scope (generally being called σ-outside and σ-inside) of the intensity distributions in the pupil plane of described irradiator IL.In addition, described irradiator IL can comprise various other parts (Figure 1B), for example integrator IN and condenser CO.Described irradiator IL can be used for regulating described radiation beam B, in its xsect, to have required homogeneity and intensity distributions.
With reference to Figure 1A, radiation beam B incides on described patterning device (for example, the mask) MA that remains on supporting construction (for example, the mask platform) MT, and forms pattern by described patterning device MA.In lithographic equipment 100, radiation beam B is reflected from patterning device (for example, mask) MA.After being reflected from patterning device (for example, mask) MA, radiation beam B passes optical projection system PS, and it focuses on radiation beam B on the target part C of substrate W.By the second locating device PW and position transducer IF2 (for example, interferometric device, linear encoder or capacitive transducer) help, moving substrate platform WT accurately is for example in order to be positioned different target part C in the path of described radiation beam B.Similarly, the first locating device PM and another location sensor IF1 can be used to accurately locate patterning device (for example, mask) MA with respect to the path of radiation beam B.Can come aligned pattern to form device (for example mask) MA and substrate W with mask alignment mark M1, M2 and substrate alignment mark P1, P2.
With reference to Figure 1B, radiation beam B incides on described patterning device (for example, the mask) MA that remains on the supporting construction (for example, mask table MT), and forms pattern by described patterning device MA.Passed after the mask MA, described radiation beam B is by optical projection system PS, and described optical projection system PS focuses on described bundle on the target part C of described substrate W.By the second locating device PW and position transducer IF (for example, interferometric device, linear encoder or capacitive transducer) help, can accurately move described substrate table WT, for example in order to different target part C is positioned in the path of described radiation beam B.Similarly, for example after the machinery from the mask storehouse obtains, or in scan period, described the first locating device PM and another position transducer (clearly not illustrating among Figure 1B) can be used for respect to the path of described radiation beam B location mask MA accurately.
The long stroke module (coarse positioning) of a part that usually, can be by forming described the first locating device PM and the help of short stroke module (fine positioning) realize the movement of mask table MT.Similarly, can adopt the long stroke module of a part that forms described the second locating device PW and the movement that short stroke module realizes described substrate table WT.In the situation that stepper (opposite with scanner), mask table MT can only link to each other with short-stroke actuator, perhaps can fix.Can come alignment mask MA and substrate W with mask alignment mark M1, M2 and substrate alignment mark P1, P2.Although shown substrate alignment mark has occupied the application-specific target part, they can the space (these are known as the line alignment mark) between target part in.Similarly, in the situation that will be arranged on more than one tube core on the mask MA, described mask alignment mark can be between described tube core.
Shown lithographic equipment 100 and 100 ' can be used in following pattern at least a:
1. in step mode, supporting construction (for example mask platform) MT and substrate table WT are remained substantially static in, the whole pattern of giving described radiation beam B is once projected to target part C upper (that is, single static exposure).Then, described substrate table WT is moved along X and/or Y-direction, so that can expose to different target part C.
2. in scan pattern, when supporting construction (for example mask platform) MT and substrate table WT are synchronously scanned, the pattern of giving described radiation beam B is projected to target part C upper (that is, single dynamic exposure).Substrate table WT can determine by (dwindling) magnification and the image inversion characteristic of described optical projection system PS with respect to speed and the direction of supporting construction (for example mask platform) MT.
3. in another kind of pattern, to keep supporting construction (for example mask platform) MT of programmable patterning device to remain substantially static, and when described substrate table WT is moved or scans, the pattern of giving described radiation beam B is projected on the target part C.Can adopt impulse radiation source SO, and after the each time movement of described substrate table WT or between the continuous radiation pulse in scan period, upgrade as required described programmable patterning device.This operator scheme can be easy to be applied to utilize in the maskless lithography art of programmable patterning device (for example, as mentioned above the array of programmable mirrors of type).
Also can adopt combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
In another embodiment, lithographic equipment 100 comprises extreme ultraviolet (EUV) source, and it is configured to produce the EUV radiation beam for the EUV photolithography.Usually, the EUV source is configured in the radiating system, and corresponding irradiation system is configured to regulate the EUV radiation beam in EUV source.
Also can adopt combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
As shown in Figure 2, according to one embodiment of present invention, lithographic equipment LA forms the part of lithographic cell LC, and lithographic cell LC is called as photoetching unit (lithocell) or bunch (cluster) sometimes, and it also comprises for before substrate exposes and the equipment of post-exposure processes.In one example, photoetching unit or bunch can comprise spinner SC for the deposition resist layer, developer DE, chill plate CH and the bake plate BK of the resist that exposed of being used for developing.Substrate loading and unloading device or the RO of robot pick up substrate from input/output end port I/O1, I/O2, are moving them between the different treatment facilities and then they are being passed on the loading bay LB of lithographic equipment.Usually these devices that are collectively referred to as track are under the control of track control module TCU, and this track control module TCU is managed control system SCS control, and this management control system SCS is also via photoetching control module LACU control lithographic equipment.Therefore, can operate different equipment, with maximum productivity and treatment effeciency.
The resolution that optical lithography has little by little satisfied semi-conductor industry in the following manner increases and the stricter challenge of overlapping requirement: the numerical aperture that increases described optical devices; Shorten illumination wavelength; With the low k factor treatment of support.This trend is continued, and for EUV photolithography instrument wavelength decreases to 13 nanometer, increases to 1.35 for the numerical aperture based on the immersion lithographic art instrument of water.
Current, base and (193 nanometer) submergence instrument of water can print less than 40 nanometers (half pitch) resolution and have a overlapping accuracy less than 6 nanometers.For ensuing lithography node, will use with the double patterning technology based on the immersion lithographic art of water, and will by under be pushed into and be lower than the 32nm node.Main challenge for exposure tool is the severization of the needed standard of Dual graphing, deals with simultaneously the contraction of process window.Code requirement comprises the throughput rate of increase, stricter overlapping and stricter critical dimension control.
For 30 years of the past, optical lithography became the main flow that semiconductor devices is produced.By increasing gradually the optical system numerical aperture and utilizing the exposure irradiation wavelength that shortens gradually, it has satisfied the accurate resolution requirement of semi-conductor industry route map.
Overcome obstacle once in a while by introducing new technology.Such example is to introduce the immersion lithographic art, and its permission optical system numerical aperture as discussed above increases the limit above 1.0.Make water allow the numerical aperture of optical system to increase to 1.35 as the immersion fluid between lens and the wafer.This has represented the new limit that the refractive index in stacking by imaging layer applies.Maximum numerical aperture is subject to the minimum refractive index of layer in stacking and the product of the sine at maximal rays angle.For the submergence based on water, the refractive index of the restriction during thin layer is stacking is 1.44 for water, is 1.56 for the final element glass of lens.This has provided the maximum numerical aperture of 1.35 (being 0.94x1.44), and wherein 0.94 is the sine at the imaging ray angle (70 degree) of maximum reality.Change immersion fluid and final lens element glass and be used for improving the stacking minimum refractive index of layer, represented huge technological challenge, and can not in the time frame of needed photolithography route map, finish and before the manufacturing usability requirements of EUV photolithography, finish.By the following half pitch resolution that provides the immersion optics system:
Wherein: Rs is half pitch resolution; λ is illumination wavelength; NA is the optical system numerical aperture; Partial coherence and the relevant process factor of configuration with irradiation with k.The minimum value of k is 0.25 and is associated with using bipolar irradiation.
Therefore the highest available optics half pitch resolution is 36nm for the bipolar irradiation of using polarization with the wavelength of 193 nanometers, 1.35 numerical apertures, based on the condition of the submergence of water.Apparently, for the photolithography that occupies 32 nanometers (half pitch) node and the optical lithography that surpasses this photolithography, need some other innovations." double patterning " represented such paces and has been in the exploitation.
At present double patterning is grouped into three kinds of main treatment technologies: based on the double patterning of distance piece; Double patterning based on photoetching-etching-photoetching-etching (LELE); With the double patterning based on photoetching-processing-photoetching-etching (LPLE).The example of LPLE is based on the double patterning of photoetching-freeze-photoetching-etching (LFLE).Under development, these all processes have provided the result of desirable.Spacer techniques is particularly suitable for the manufacturing for flash memory.
In Fig. 3-6, demonstrate the operation of basic spacer double patterning according to an embodiment of the invention.Fig. 3-4 illustrates the first step in the distance piece operation, and it is used for limiting resist pattern (showing such as Fig. 3) by photolithography, afterwards this resist pattern is transferred to sacrifice layer (as shown in Figure 4) by etching.In Fig. 3, patterning device 310 is presented at the top of the photoengraving pattern 320 (resist) at the top that is positioned at bottom antireflective coat (barc) layer 330.In step (not shown) early, by resist layer being exposed and developing to form pattern 320.Remainder in stacking comprises sacrifice layer 340, hard mask layer 350, electrical layer (electric layer) 360 and oxide layer 370.In one embodiment, sacrifice layer 340 comprises the advanced patterned film (APF) of the Santa Clara Applied Materials of California.
According to one embodiment of present invention, the etching of passing through that shows from Fig. 3 of Fig. 4 is transferred to photoengraving pattern 320 (not demonstrating) on the sacrifice layer 340 in Fig. 4.
According to one embodiment of present invention, Fig. 5 demonstrate conformally deposited to through the top of overetched hard mask pattern 350 and afterwards anisotropically etched back form layer 380 with the distance piece that stays spacer pattern, this spacer pattern is followed all edges of the sacrificial pattern that the initial lithographic art limits.After the initial sacrificial pattern 340 etched (referring to Fig. 6), to stay high-resolution spacer pattern.
Afterwards, described spacer pattern stood for the second photoetching stage, was used for etching and trimmed undesirable part of spacer pattern, thereby stay needed high-resolution final pattern (not shown).Afterwards, final etched being transferred in the hard mask layer of high resolving power spacer pattern that limits, this hard mask layer is used for restriction to the etching of following polysilicon layer (not shown).In Fig. 7, demonstrate typical scanning electron microscope (SEM) profile that in polysilicon, obtains.
Because by the thickness of controlling sedimentary deposit rather than the high resolving power that realizes live width by the control optical imagery, so this spacer techniques has very strong versatility.This is avoided increasing overlapping requirement and the resolution of optical exposure instrument.Major requirement to the optical exposure instrument is not resolution or overlapping, but the control of the homogeneity of critical dimension and critical dimension.The control of critical dimension is to the width generation effect in the gap between the distance piece live width that limits.If the critical live width size of the sacrificial pattern that is limited by lithography tool is incorrect, double-form (bi-modal) in measured space width, will occurs so and distribute.
According to one embodiment of present invention, in Fig. 8-11, demonstrate basic photoetching-etching-photoetching-etching (LELE) treatment process.In LELE, in two treatment process, expose two with pattern that photolithographicallpatterned was limited in the mode that has certain interval.As shown in Figure 8, demonstrate the top that patterning device 810 is positioned at stack layer.At the top of stack layer is the first photoengraving pattern 820 (resist) at the top of barc layer 830.The remainder of stack layer comprises hard mask layer 840, polysilicon layer 850 and last silicon dioxide (SiO
2) layer 860.
According to one embodiment of present invention, Fig. 8-9 demonstrates the first photoengraving pattern 820 is printed onto in the resist, and by etching it is transferred to hard mask layer 840 afterwards.The ratio at line and interval is that the pattern of 1: 1 type is 1: 3 by overexposure to the ratio at line and interval, and this has provided the technology controlling and process of optimizing and has expanded the interval, to allow to insert the second photoengraving pattern.
According to one embodiment of present invention, Figure 10 demonstrates imaging and its restriction in resist 880 of the second gap pattern 870, and this resist is above another barc layer 890.Also with described pattern overexposure, be used for providing 1: 3 line and the ratio at interval.Next, the second photoengraving pattern is developed, to limit resist/barc pattern 1100.Finally, being limited at the first pattern 840 in the hard mask layer and the second pattern 1100 that is limited in the resist layer is transferred in the polycrystalline silicon device layer (not shown) by etching.
SEM profile among Figure 12 demonstrates the typical line profile that is limited in the polysilicon.Difference in height between the line is owing to the difference of the etching characteristic of the resist image (the hard mask that does not remove from the first pattern) of limiting pattern and hard mask.
For this technology, be the homogeneity of critical dimension and overlapping to the definite requirement of exposure tool." positivity " LELE technological process that use demonstrates in Fig. 8-11, overlapping control defines the dimensional homogeneity at the interval between the line, and its processing for device may be so crucial unlike the developed width of the line that is used for the restriction grid structure.Critical dimension control for final polysilicon live width is most important requirement; This is limited by exposure tool.If the critical dimension of the first and second patterns can not be mated, can observe so the double-form live width and distribute.
Up-to-date is LPLE technique with the most exciting exploitation.Example is to freeze technique (to be also referred to as photoetching-freeze-photoetching-etching, LFLE).LPLE technique has reduced the number of the treatment step in the LELE operation.Do not need the first etching in the LELE technique.This means that potential cost savings and productive rate improve.In Figure 13-16, demonstrate the LFLE order.
According to one embodiment of present invention, Figure 13 demonstrates the restriction of the first photoengraving pattern that is similar to LELE technique.Figure 13 demonstrates the patterning device 1310 in the first photoengraving pattern (being made by resist) 1320 tops, and this first photoengraving pattern is exposed and develops.Resist 1320 is positioned at the top of barc layer 1330, and this barc layer is at the top of polysilicon layer 1340.SiO
2Layer 1350 is positioned at the bottom of stack layer.
In next step, according to one embodiment of present invention, as shown in figure 14, freeze the patterning of resist in the place that is fit to, so that next resist coating that it can be used to limit the second pattern in the resist applies, and not dissolvedly fall, rather than pattern 1320 is etched in the hard mask.Frozen resist pattern displaying is 1320 '.Can realize freezing of resist pattern with following various ways, they comprise: Implantation; The DUV light stiffening is processed; Chemicosolidifying processing etc.Chemicosolidifying is processed and to be promised to be most economical and processing mode the most easily.
In Figure 15, according to one embodiment of present invention, proceed to process for resist coating 1360.According to one embodiment of present invention, Figure 16 demonstrates the second restriction of pattern 1370 in resist.The first image 1320 ' and the second image 1370 are limited in the resist, and have prepared etching and be transferred in the polysilicon 1340.In Figure 17, demonstrate according to an embodiment of the invention, the SEM profile that in polysilicon, obtains.
LFLE technique has proposed the challenge identical with LELE technique to exposure tool.By " positivity " operation of using patterning light wherein to be exposed in the interval, show as the wide variety at the interval between the line from the aliasing error of imaging.Of inferior quality overlapping control will provide the double-form in the width at interval to distribute.Independently homogeneity and critical dimension (CD) control of step of exposure have also facilitated the double-form in the line width variation to distribute for each.Outstanding along with all double patterning operations become strict critical dimension and the overlapping standard that links together with high productivity for the challenge of exposure tool.
A related major obstacle of double patterning technology is that the first photoengraving pattern is accurately aimed at the second photoengraving pattern.In one embodiment, the first pattern is aimed in the mode that has certain interval with the second pattern, but this situation always not.In order to illustrate these impacts, discuss LFLE technique in more detail as an example hereinafter.With reference to figure 14-16, apply the first photoengraving pattern 1320 ' with the second radiation-sensitive layer (resist layer) 1360 again, be used for holding the second photoengraving pattern 1370.The alignment mark that for example limits when being coated with the second radiation-sensitive layer 1360, because they have similar optical property, has been deleted in contrast ground in the first radiation-sensitive layer 1320.Therefore, can not watch alignment mark in the resist by alignment system.
In Figure 18, the alignment system irradiation beam on the second resist layer 1360 is incided in arrow 1810 expressions.Dotted arrow 1820 expressions are from the very weak scattered signal of buried alignment keys.Usually, this will force and use the alignment mark (i.e. lower floor in the alignment keys stack layer) that is limited by before processing horizontal to be used for aiming at the first pattern and the second pattern subsequently.Therefore, two patterns are not by directly aligned with each other, but they are aimed at independently by substitute.This has in fact reduced the alignment precision between the pattern.This has been main problem, and will be more serious because the line interval width continues to reduce.
According to one embodiment of present invention, be with the resist-coating alignment mark time, to provide so that the alignment mark of patterning (for example diffraction grating, diffraction array, aligned array or be used for aim at other pattern) restriction in the first pattern of double patterning technique (for example LFLE) to give prominence to the method that presents for a scheme of the problem of above setting forth.For this reason, in the double patterning processing step, before the first resist layer is exposed and develops, with it simultaneously or after the first resist layer is exposed and develops, can add dye composition.For example, can use the dye composition that can not disturb significantly the photochemical properties of resist layer or can not disturb significantly the ability of its freeze frame in the situation of LFLE.
In one embodiment, as discussing in more detail hereinafter, dye composition is light-sensitive compound or photochromic material.In one embodiment, dye composition can be to be absorbefacient basically or to be reflexive basically in the wavelength period of expectation.In another embodiment, dye composition can be the expectation wavelength period in be fluorescence or cold light.This wavelength period can comprise alignment system irradiation beam wavelength.In these all embodiment, diffraction grating, diffraction array, aligned array or the pattern that is used for aiming at are formed.Can detect this diffraction grating, diffraction array, aligned array or pattern by alignment system.
According to one embodiment of present invention, in Figure 19, the alignment system irradiation beam on the second resist layer 1360 is incided in arrow 1910 expressions.In the embodiment that this demonstrates, by dye composition the first pattern 1320 ' is augmented.Arrow 1920 expressions are from the strong signal (for example order of diffraction) of buried alignment keys, and it is visible now, also is like this even the first pattern is applied by the second resist layer 1360.As shown in the figure, dye composition is coated to the first photoengraving pattern 1320 '.In another embodiment, the dye composition that is fit to can be coated on the second radiation-sensitive layer 1360.Yet in these embodiments any, dye composition provides at the first photoengraving pattern and has covered optical contrast between its second resist layer.This contrast has formed diffraction grating, diffraction array, aligned array or has depended on other pattern of geometric configuration of the pattern of the alignment mark that uses in the first Patternized technique in double patterning technique.
In one embodiment, dye composition is added on the first resist layer (or first photoengraving pattern).Dye composition and the first resist layer (or first photoengraving pattern) cooperation, other pattern that is used to form diffraction grating, diffraction array, aligned array or is used for aiming at.In another embodiment, dye composition is added on the second resist layer, and this second resist layer covers the first pattern (alternatively it being coated on the first resist layer or the first photoengraving pattern).In this embodiment, the second resist layer (covering the first pattern) and the cooperation of dye composition wherein, other pattern that is used to form diffraction grating, diffraction array, aligned array or is used for aiming at.In in these embodiments any, other pattern that diffraction grating, diffraction array, aligned array or be used for aimed at intersperses among dye composition by the zone that will lack dye composition and forms.In one embodiment, dye composition is light-sensitive compound or the photochromic material of sensitization.
Can select dyestuff, with coupling alignment system wavelength.These dyestuffs can be added in double patterning technique on the first resist layer, maybe can be applied on the photoengraving pattern that has developed.In another embodiment, dyestuff may be added on the coat of the second resist.In order to be used for LFLE, can augment frozen material with dyestuff, so that described material freezes simultaneously the first photoengraving pattern and the optical contrast is provided, with other pattern of setting up diffraction grating, diffraction array, aligned array or being used for aiming at, thereby so that the first pattern itself becomes alignment mark.By this way, the second pattern in double patterning technique can directly be aimed at the first photoengraving pattern, and needn't adopt the alignment mark of replacement, thereby has greatly improved such as the alignment accuracy in the photoengraving pattern metallization processes of double patterning technique.
Exemplary alignment system wavelength in existing the use is 532nm, 635nm, 780nm and 850nm; Yet, depend on the light of the particular type of in etching system, using or other wavelength of radiation wavelength and also be fine.Can select dyestuff, so that the character of resist is unaffected under the photochemistry wavelength and only affect the resist transparency under alignment wavelengths.
Figure 20 demonstrates the exemplary transmitted spectrum of the photoresist of augmenting the chromatic colour dyestuff.Described spectrum shows that dyestuff is absorbefacient in specific wavelength period (it can be selected for corresponding to alignment wavelengths) basically; Yet these dyestuffs are transparent under typical photochemistry wavelength basically.In Figure 20, the spectrum of reference marker 2010 expression cyan photoresists, the spectrum of reference marker 2020 expression magenta photoresists, and the spectrum of the yellow photoresist of reference marker 2030 expressions.
A kind of exemplary dyes is M-540, its 540 nanometers and near be strong absorption.Demonstrate the molar extinction coefficient spectrum of M-540 at Figure 21.Hereinafter demonstrate the chemical constitution of M-540:
The second exemplary dyes is thiophene three carbocyanines (thiatricarbocyanine) (being also referred to as C7) dyestuffs, its 780 nanometers and near be strong absorption.In Figure 22, demonstrate the molar extinction coefficient spectrum of C7.Hereinafter demonstrate the chemical constitution of C7:
These two kinds of dyestuffs are transparent (for example in 220 nanometer to 400 nanometer range) under typical photochemistry wavelength.Other dyestuff that has the character of absorbability, fluorescence or cold light under typical alignment wavelengths also is utilizable.The manufacturer of an exemplary dyestuff is FL.Jupiter, H.W.Sands company.For example, can utilize supporting the photochemistry exposure under 193nm, 248nm, 365nm, 405nm and the 435nm is absorbefacient other dyestuff under typical alignment system wavelength simultaneously basically.
In one embodiment of the invention, dye composition comprises light-sensitive compound.In another embodiment of the present invention, dye composition comprises photochromic material.Example according to photochromic material of the present invention is spiro-pyrans (spiropyran), azobenzene (azobenzene), photochromic quinone (photochromic quinone), inorganic photochromic material or the photochromic complex compound that is connected to the organic chromophores of metallic ion.
Figure 23 demonstrates the embodiment that use photolithography according to an embodiment of the invention is made the method 2300 of semiconductor devices.In piece 2310, with the first radiation-sensitive layer (for example resist) coated substrate.In piece 2320, dye composition is added into the first radiation-sensitive layer.In one embodiment, piece 2320 (interpolation dye composition) is positioned at piece 2310 (coated substrate) before.In another embodiment, piece 2310 (coated substrate) is positioned at piece 2320 (interpolation dye composition) before.In piece 2330, the first radiation-sensitive layer is exposed and develops, to form the first photoengraving pattern.In one embodiment, piece 2330 uses are from the radiation beam of lithographic equipment.In one embodiment, piece 2330 (exposure and development) is positioned at piece 2320 (interpolation dye composition) before; Mean that dye composition is added into the first photoengraving pattern.In piece 2340, the first photoengraving pattern is coated with the second radiation-sensitive layer.In piece 2350, detect the position of the first photoengraving pattern.In one embodiment, finish this detection by the alignment system bundle.In piece 2360, come aligning substrate with the position that has detected of the first photoengraving pattern.In piece 2370, the second radiation-sensitive layer is exposed and develops, be used to form the second photoengraving pattern.In one embodiment, piece 2370 uses are from the radiation beam of lithographic equipment.Because before the second radiation-sensitive layer is exposed with the first pattern aligning substrate, so aim at the second photoengraving pattern with the first photoengraving pattern.In one embodiment, aim at the second photoengraving pattern with the first photoengraving pattern in the mode that has certain interval.
In an embodiment of method 2300, other pattern that dye composition and the first photoengraving pattern form diffraction grating, diffraction array, aligned array or be used for aiming at.An embodiment of method 2300 also is included in the second radiation-sensitive layer and applies the selectable (not shown) step of processing the first photoengraving pattern before the step 2340 of the first photoengraving pattern.In one embodiment, this selectable treatment step comprises: freeze the first photoengraving pattern.In this embodiment, realize piece 2320 (interpolation dye composition) by before frozen material is coated to the first photoengraving pattern, at first dye composition being added into frozen material.Like this, pattern has not only been freezed in the interpolation of frozen material, but also has introduced dye composition.
In an embodiment of method 2300, dye composition the expectation wavelength period in be fluorescence or cold light, it can be corresponding to the alignment system wavelength.In another embodiment, dye composition is absorbefacient basically or is reflexive basically in the wavelength period of expectation, and it can be corresponding to the alignment system wavelength.In one embodiment, dye composition comprises light-sensitive compound.In another embodiment, dye composition comprises photochromic material.Comprise spiro-pyrans (spiropyran), azobenzene (azobenzene), photochromic quinone (photochromic quinone), inorganic photochromic material or be connected to the photochromic complex compound of the organic chromophores of metallic ion according to the example of photochromic material of the present invention.
Figure 24 demonstrates the alternative method 2400 that use photolithography according to an embodiment of the invention is made semiconductor devices.The difference of the principle between the method 2300 and 2400 is, in method 2400, dye composition is added into the second radiation-sensitive layer, rather than ground floor.Therefore, because dye composition is added in the operation of back, so the initial processing step that uses in traditional double patterning method remains unchanged.
In piece 2410, with the first radiation-sensitive layer (for example resist) coated substrate.In piece 2420, the first radiation-sensitive layer is exposed and develops, be used to form the first photoengraving pattern.In one embodiment, piece 2420 uses are from the radiation beam of lithographic equipment.In piece 2430, apply the first photoengraving pattern with the second radiation-sensitive layer.In piece 2440, dye composition is added into the second radiation-sensitive layer.In piece 2450, detect the position of the first photoengraving pattern.In one embodiment, realize this detection by the alignment system bundle.In piece 2460, come aligning substrate with the position of having detected of the first photoengraving pattern.In piece 2470, the second radiation-sensitive layer is exposed and develops, be used to form the second photoengraving pattern.In one embodiment, piece 2470 uses are from the radiation beam of lithographic equipment.Because substrate was aimed at the first pattern before exposure the second radiation-sensitive layer, so, the second photoengraving pattern aimed at the first photoengraving pattern.In one embodiment, aim at the second photoengraving pattern with the first photoengraving pattern in the mode that has certain interval.
In an embodiment of method 2400, other pattern that dye composition and the second photoengraving pattern have formed diffraction grating, diffraction array, aligned array or be used for aiming at.An embodiment of method 2400 also is included in the second radiation-sensitive layer and applies the selectable (not shown) step of processing (for example freezing) first photoengraving pattern before the step 2430 of the first photoengraving pattern.
In an embodiment of method 2400, dye composition the expectation wavelength period in be fluorescence or cold light, it can be corresponding to the alignment system wavelength.In another embodiment, dye composition is absorbefacient basically or is reflexive basically in the wavelength period of expectation, and it can be corresponding to the alignment system wavelength.In one embodiment, dye composition comprises light-sensitive compound.In another embodiment, dye composition comprises photochromic material.Comprise spiro-pyrans (spiropyran), azobenzene (azobenzene), photochromic quinone (photochromic quinone), inorganic photochromic material or be connected to the photochromic complex compound of the organic chromophores of metallic ion according to the example of photochromic material of the present invention.
In Figure 25, demonstrate use photolithography according to an embodiment of the invention and make the system 2500 of semiconductor devices.System 2500 comprises irradiation source 2510 and alignment system 2520.Irradiation source 2510 provides the alignment beams of the alignment mark that is used for reading double patterning technique under specific wavelength.Alignment system 2520 is configured to detect and is coated to the second radiation-sensitive layer on the first photoengraving pattern or is coated to dye composition among in the first radiation-sensitive layer on the substrate one in double patterning technique.Based on two patterning step of the alignment mark double patterning technique that forms in the first photoengraving pattern the time, dye composition provides the contrast of the expectation between the first photoengraving pattern and the second radiation-sensitive layer.In one embodiment, aim at two patterning step in the mode that has certain interval.
Be appreciated that and in double patterning technique arbitrarily (for example distance piece, LELE, LPLE or LFLE double patterning technique), use dye composition.With reference to figure 8-11 and Figure 13-16, LELE and LFLE relate to the first photoengraving pattern that applies with the second radiation-sensitive layer (for example resist) subsequently again.In certain embodiments, the first photoengraving pattern can have the alignment mark that produces during the treatment step that produces the first pattern.Dye composition is added into the first photoengraving pattern (before or after it is developed and exposes, and before or after substrate is coated) or the second radiation-sensitive layer, provide the optical contrast, so that dye composition cooperates to form diffraction grating, diffraction array, aligned array or is used for aligning with the first photoengraving pattern or the second lithography layer other pattern.Therefore, the second photoengraving pattern can directly and very accurately be aimed at the first photoengraving pattern.In certain embodiments, aim at the second photoengraving pattern in the mode that has certain interval with the first photoengraving pattern.
Before this, by in the layer of having processed before, aiming at the first pattern with alignment mark, thereby introduced relevant error.So that the second pattern is aimed at independently with this alignment mark, again introduced relevant error afterwards.In the supposition of the poorest situation, error is large and on same direction, thereby has limited the optical resolution that can obtain.The alignment mark that directly the second pattern is limited with same the first pattern, a source of having eliminated error.
Although being described in detail in detail in this article, lithographic equipment is used in manufacturing IC (integrated circuit), but should be understood that, lithographic equipment described here can have the application that other is arranged aspect parts of feature of micro-meter scale even nanoscale in manufacturing, such as the guiding of manufacturing integration optical system, magnetic domain memory and check pattern, flat-panel monitor, liquid crystal display (LCD), thin-film head etc.One skilled in the art would recognize that in the situation of this alternate application, any term used herein " wafer " or " tube core " can be thought respectively and more upper term " substrate " or " target part " synonym.Here the substrate of indication can be processed before or after exposure, for example in track (a kind ofly typically resist layer is coated onto on the substrate, and the instrument that the resist that has exposed is developed), measuring tool and/or the instruments of inspection.In applicable situation, can be with content application disclosed herein in this and other substrate processing instrument.In addition, more than described substrate can be processed once, for example for producing multilayer IC, so that described term used herein " substrate " also can represent to have comprised the substrate of a plurality of processing layers.
Term used herein " radiation " and " bundle " comprise the electromagnetic radiation of all types, comprise: ultraviolet (UV) radiation (for example have approximately 365,355,248,193,157 or the wavelength of 126nm) and extreme ultraviolet (EUV) radiation (for example, have in the 5-20nm scope wavelength) and the particle beams (for example ion beam or electron beam).
In the situation that allow, term " lens " can represent any one or the combination in various types of opticses, comprises refraction type, reflective, magnetic, electromagnetic type and electrostatic optics.
As using herein, term " dye composition " is broadly explained." dye composition " can be any light-sensitive compound or any photochromic material." dye composition " can also be any compound that can change relevant optical property (such as but not limited to absorption, reflection, fluorescence and/or cold light), so that the pattern that forms in the first radiation sensitive material layer or alignment mark can detect, even when it is covered with the second radiation sensitive material layer with the optical property that is similar to undyed ground floor, also be like this.
Above description is intended to describe, rather than restrictive.Thereby, under the prerequisite of the protection domain that does not depart from claims, can above-mentioned the present invention be made amendment, this it will be apparent to those skilled in the art that.
Claims (15)
1. method of using photolithography to make semiconductor devices, described method comprises step:
(a) with the first radiation-sensitive layer coated substrate;
(b) dye composition is added into described the first radiation-sensitive layer;
(c) described the first radiation-sensitive layer is exposed and develop, to form the first photoengraving pattern;
(d) apply described the first photoengraving pattern with the second radiation-sensitive layer;
(e) position of described the first photoengraving pattern of detection;
(f) with the described substrate of the position alignment that has detected of described the first photoengraving pattern; With
(g) described the second radiation-sensitive layer is exposed and develop, to form the second photoengraving pattern;
(h) wherein, aim at the second photoengraving pattern with described the first photoengraving pattern, and wherein said dye composition is provided at the first photoengraving pattern and covers optical contrast between its second radiation-sensitive layer.
2. manufacture method according to claim 1 also comprises:
(h1) described the second photoengraving pattern is aimed at described the first photoengraving pattern in the mode that has certain interval.
3. manufacture method according to claim 1 also comprises:
(c1) other pattern that forms diffraction grating, diffraction array, aligned array or be used for aiming at by described dye composition and described the first photoengraving pattern.
4. manufacture method according to claim 1 wherein, is added the step of dye composition and was carried out before applying described substrate.
5. manufacture method according to claim 1 wherein, is added the step of dye composition and is carried out after applying described substrate and to described the first radiation-sensitive layer exposure with before developing.
6. manufacture method according to claim 1 wherein, is added the step of dye composition and is being carried out to described the first radiation-sensitive layer exposure with after developing.
7. manufacture method according to claim 1 also comprises:
(d1) before applying described the first photoengraving pattern with described the second radiation-sensitive layer, process described the first photoengraving pattern.
8. manufacture method according to claim 1, wherein, described dye composition in the wavelength period of expectation be fluorescence or cold light.
9. manufacture method according to claim 1, wherein, described dye composition is absorbefacient or reflexive in the wavelength period of expectation.
10. method of using photolithography to make semiconductor devices, described method comprises step:
(a) with the first radiation-sensitive layer coated substrate;
(b) described the first radiation-sensitive layer is exposed and develop, to form the first photoengraving pattern;
(c) apply described the first photoengraving pattern with the second radiation-sensitive layer;
(d) dye composition is added into described the second radiation-sensitive layer;
(e) position of described the first photoengraving pattern of detection;
(f) with the described substrate of the position alignment that has detected of described the first photoengraving pattern; With
(g) described the second radiation-sensitive layer is exposed and develop, to form the second photoengraving pattern;
(h) wherein, aim at described the second photoengraving pattern with described the first photoengraving pattern, and wherein said dye composition is provided at the first photoengraving pattern and covers optical contrast between its second radiation-sensitive layer.
11. manufacture method according to claim 10 also comprises:
(h1) described the second photoengraving pattern is aimed at described the first photoengraving pattern in the mode that has certain interval.
12. manufacture method according to claim 10 also comprises:
(d1) other pattern that forms diffraction grating, diffraction array, aligned array or be used for aiming at by described dye composition and described the second photoengraving pattern.
13. manufacture method according to claim 10 wherein, was processed described the first photoengraving pattern before applying described the first photoengraving pattern with the second radiation-sensitive layer.
14. a system that uses photolithography to make semiconductor devices, described system comprises:
(a) irradiation source, described irradiation source are used for providing the alignment beams of alignment mark specific wavelength, that be used for reading in double patterning technique; With
(b) alignment system, described alignment system are configured to detect being coated in the second radiation-sensitive layer on the first photoengraving pattern or being coated to dye composition among in the first radiation-sensitive layer on the substrate one in described double patterning technique;
(c) wherein, based on two patterning step of the described double patterning technique of alignment mark that forms in described the first photoengraving pattern the time, described dye composition is provided at the contrast of the expectation between described the first photoengraving pattern and described the second radiation-sensitive layer.
15. system according to claim 14.Wherein, by the second radiation-sensitive layer being exposed and the second photoengraving pattern that forms that develops is aimed at described the first photoengraving pattern in the mode that has certain interval.
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| US3784378A (en) * | 1971-10-18 | 1974-01-08 | Du Pont | Double-exposure method for producing reverse images in photopolymers |
| CN1214541A (en) * | 1997-10-09 | 1999-04-21 | 日本电气株式会社 | Semiconductor device and manufacturing method thereof |
| JP2002341544A (en) * | 2001-03-14 | 2002-11-27 | Fuji Photo Film Co Ltd | Photosensitive resin composition for detection of system error of exposure device |
| WO2007031105A1 (en) * | 2005-09-16 | 2007-03-22 | Micronic Laser Systems Ab | Alignment method with compensation of non linear errors |
| WO2009122275A1 (en) * | 2008-04-02 | 2009-10-08 | Az Electronic Materials Usa Corp. | A photoresist image-forming process using double patterning |
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| US7687209B2 (en) * | 2006-03-21 | 2010-03-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method with double exposure overlay control |
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|---|---|---|---|---|
| US3784378A (en) * | 1971-10-18 | 1974-01-08 | Du Pont | Double-exposure method for producing reverse images in photopolymers |
| CN1214541A (en) * | 1997-10-09 | 1999-04-21 | 日本电气株式会社 | Semiconductor device and manufacturing method thereof |
| JP2002341544A (en) * | 2001-03-14 | 2002-11-27 | Fuji Photo Film Co Ltd | Photosensitive resin composition for detection of system error of exposure device |
| WO2007031105A1 (en) * | 2005-09-16 | 2007-03-22 | Micronic Laser Systems Ab | Alignment method with compensation of non linear errors |
| WO2009122275A1 (en) * | 2008-04-02 | 2009-10-08 | Az Electronic Materials Usa Corp. | A photoresist image-forming process using double patterning |
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