CN102181838A - Chromium plate manufacturing process - Google Patents
Chromium plate manufacturing process Download PDFInfo
- Publication number
- CN102181838A CN102181838A CN 201110115739 CN201110115739A CN102181838A CN 102181838 A CN102181838 A CN 102181838A CN 201110115739 CN201110115739 CN 201110115739 CN 201110115739 A CN201110115739 A CN 201110115739A CN 102181838 A CN102181838 A CN 102181838A
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- CN
- China
- Prior art keywords
- glass substrate
- mark condition
- manufacturing process
- chromium plate
- plate manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011651 chromium Substances 0.000 title claims abstract description 57
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 56
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000004544 sputter deposition Methods 0.000 claims abstract description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 abstract description 14
- 230000006378 damage Effects 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 150000001485 argon Chemical class 0.000 description 4
- 150000001844 chromium Chemical class 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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Abstract
The invention discloses a chromium plate manufacturing process which comprises the following steps: step a, cleaning and drying a glass substrate; step b, sputtering and coating a shading layer on the glass substrate in a vacuum chamber; step c, returning through a rotation chamber, and sputtering and coating a light absorbing layer on the glass substrate; and step d, conducting constant temperature processing on the glass substrate. For the chromium plate manufacturing process, the parameters of the chromium plate manufacturing process are controlled, so that a chromium plate manufactured by the invention has higher property of preventing the damage caused by the discharging of static electricity.
Description
Technical field
The present invention relates to the light shield field, particularly relate to a kind of chromium plate manufacturing process.
Background technology
Along with the pattern of semiconductor machining is more and more meticulousr, the live width of the pattern that is made of chromium metal (Cr) on the light shield chromium plate and distance are also more and more littler, and chromium is because manufacturing process, LCD (Liquid Crystal Display) exposure and reason such as dry cause the chromium line to have a large amount of static electric charge (electric static charge), during these discharge electrostatic charges, can cause chromium line on the light shield to peel off or dissolve, destroy the integrity of pattern.
Especially in the production process of light shield, produce a large amount of static during the LCD exposure and form static discharge easily, cause the chromium plate of light shield to be wounded, and destroy the pattern of chromium plate.
In order to solve the problem of static discharge destruction mask pattern in the production process, wherein a kind of method is that gloves to the operator carry out ground connection and produce static discharge when preventing operator's hand contact light shield in the prior art, another method be on the placement location of light shield and mobile alignment, spray the plasma gas with in and static, yet above-mentioned method can not make light shield prevent that effectively static discharge from destroying chromium plate on root.
Summary of the invention
The light shield chromium plate is destroyed the technical problem that causes destroying pattern integrity by static discharge easily in the production process thereby the present invention mainly solves, the invention provides a kind of chromium plate manufacturing process, the chromium plate that this chromium plate manufacturing process makes can prevent static effectively, and has solved chromium plate by static discharge destructive problem from root effectively.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts provides a kind of chromium plate manufacturing process.This chromium plate manufacturing process comprises: step a, clean and the dry glass substrate; Step b, in vacuum chamber, this glass substrate is carried out the light shield layer sputter coating, wherein the transfer rate of this glass substrate is 0.25 meter/minute～0.35 meter/minute, the argon gas volumetric flow rate is 80 mark condition ml/min～200 mark condition ml/min, the nitrogen volumetric flow rate is 180 mark condition ml/min～320 mark condition ml/min, and sputtering voltage is that 250 volts～650 volts, sputtering current are 1.2 amperes～3.5 amperes; Step c, return and this glass substrate is carried out the light-absorption layer sputter coating by spin chamber, wherein the transfer rate of this glass substrate is 0.25 meter/minute～0.35 meter/minute, the argon gas volumetric flow rate is 100 mark condition ml/min～240 mark condition ml/min, the oxygen volumetric flow rate is 220 mark condition ml/min～340 mark condition ml/min, and sputtering voltage is that 250 volts～650 volts, sputtering current are 1.2 amperes～3.5 amperes; Steps d is carried out constant temperature to this glass substrate and is handled.
Further improvement as above-mentioned chromium plate manufacturing process, in this step b, the transfer rate of this glass substrate is 0.3 meter/minute, the volumetric flow rate of this argon gas is 100 mark condition ml/min～180 mark condition ml/min, and the volumetric flow rate of this nitrogen is 220 mark condition ml/min～280 mark condition ml/min.
Further improvement as above-mentioned chromium plate manufacturing process, in this step c, the transfer rate of this glass substrate is 0.3 meter/minute, the volumetric flow rate of this argon gas is 140 mark condition ml/min～200 mark condition ml/min, and the volumetric flow rate of this oxygen is 240 mark condition ml/min～300 mark condition ml/min.
As the further improvement of above-mentioned chromium plate manufacturing process, in this step b and this step c, this sputtering voltage is 320 volts～580 volts, and this sputtering current is 1.5 amperes～3.2 amperes.
As the further improvement of above-mentioned chromium plate manufacturing process, among this step a, utilize this glass substrate of washed with de-ionized water.
As the further improvement of above-mentioned chromium plate manufacturing process, after this step a, this glass substrate is heated to 330 degrees centigrade.
As the further improvement of above-mentioned chromium plate manufacturing process, in this steps d, this glass substrate carries out constant temperature at vacuum chamber to be handled.
Chromium plate manufacturing process of the present invention is by the parameter of control chromium plate manufacturing process, and the chromium plate that makes the present invention make has higher anti-electrostatic-discharge destructive characteristic in process of production.
The invention has the beneficial effects as follows: the chromium plate that chromium plate manufacturing process of the present invention makes also has higher anti-electrostatic-discharge destructive characteristic in the process of using, this chromium plate can not discharged by the voltage of 8000 volts of static gun bombardment can not wounded destruction yet, adopts the pattern effect of light shield of this chromium plate good.
Description of drawings
Fig. 1 is the schematic flow sheet of chromium plate manufacturing process one preferred embodiment of the present invention.
Embodiment
Seeing also Fig. 1, is the schematic flow sheet of chromium plate manufacturing process one preferred embodiment of the present invention.
Chromium plate manufacturing process of the present invention comprises:
Step a cleans and the dry glass substrate;
Step b, in vacuum chamber, this glass substrate is carried out the light shield layer sputter coating, wherein the transfer rate of this glass substrate is 0.25 meter/minute～0.35 meter/minute, the argon gas volumetric flow rate is 80 mark condition ml/min～200 mark condition ml/min, the nitrogen volumetric flow rate is 180 mark condition ml/min～320 mark condition ml/min, and sputtering voltage is that 250 volts～650 volts, sputtering current are 1.2 amperes～3.5 amperes;
Step c, return and this glass substrate is carried out the light-absorption layer sputter coating by spin chamber, wherein the transfer rate of this glass substrate is 0.25 meter/minute～0.35 meter/minute, the argon gas volumetric flow rate is 100 mark condition ml/min～240 mark condition ml/min, the oxygen volumetric flow rate is 220 mark condition ml/min～340 mark condition ml/min, and sputtering voltage is that 250 volts～650 volts, sputtering current are 1.2 amperes～3.5 amperes;
Steps d is carried out constant temperature to this glass substrate and is handled.
In the present invention, the material of this glass substrate comprises soda glass (also claiming to receive lime glass), boron silicon glass and silica glass, and preferably, the present invention adopts soda glass.
In the preferred embodiment, this step a utilizes this glass substrate of washed with de-ionized water, and this glass substrate is positioned in the vacuum chamber and is heated to 330 degrees centigrade.Wherein, can adopt Marangon dry technology (Marangonidryer) that this glass substrate is carried out drying treatment.
In the preferred embodiment, at this step b, the transfer rate of this glass substrate is 0.3 meter/minute, and the volumetric flow rate of this argon gas is 100 mark condition ml/min～180 mark condition ml/min, and the volumetric flow rate of this nitrogen is 220 mark condition ml/min～280 mark condition ml/min.The material of this light shield layer mainly comprises the nitride of chromium and chromium.
In the preferred embodiment, at this step c, the transfer rate of this glass substrate is 0.3 meter/minute, and the volumetric flow rate of this argon gas is 140 mark condition ml/min～200 mark condition ml/min, and the volumetric flow rate of this oxygen is 240 mark condition ml/min～300 mark condition ml/min.The material of this light-absorption layer comprises chromic oxide, and this light-absorption layer mainly absorbs UV-light.
In the preferred embodiment, this sputtering voltage is 320 volts～580 volts, and this sputtering current is 1.5 amperes～3.2 amperes.
In the preferred embodiment, in this steps d, this glass substrate carries out constant temperature at vacuum chamber to be handled.
Make chromium plate by above-mentioned technical process, the chromium plate of chromium plate manufacturing process of the present invention manufacturing has higher anti-electrostatic-discharge destructive characteristic.
In the prior art, when the chromium line live width of mask pattern was 1 millimeter, electrostatic potential is 2000 volts just can destroy the chromium line; When chromium line live width was 0.4 millimeter, electrostatic potential can destroy for 700 volts and puncture the chromium line.The chromium plate that chromium line manufacturing process of the present invention is made is through the voltage bombardment test of 8000 volts of static gun, the not destroyed yet puncture of chromium line pattern.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification sheets of the present invention and accompanying drawing content to be done; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (7)
1. a chromium plate manufacturing process is characterized in that, comprising:
Step a cleans and the dry glass substrate;
Step b, in vacuum chamber, described glass substrate is carried out the light shield layer sputter coating, the transfer rate of wherein said glass substrate is 0.25 meter/minute～0.35 meter/minute, the argon gas volumetric flow rate is 80 mark condition ml/min～200 mark condition ml/min, the nitrogen volumetric flow rate is 180 mark condition ml/min～320 mark condition ml/min, and sputtering voltage is that 250 volts～650 volts, sputtering current are 1.2 amperes～3.5 amperes;
Step c, return and described glass substrate is carried out the light-absorption layer sputter coating by spin chamber, the transfer rate of wherein said glass substrate is 0.25 meter/minute～0.35 meter/minute, the argon gas volumetric flow rate is 100 mark condition ml/min～240 mark condition ml/min, the oxygen volumetric flow rate is 220 mark condition ml/min～340 mark condition ml/min, and sputtering voltage is that 250 volts～650 volts, sputtering current are 1.2 amperes～3.5 amperes;
Steps d is carried out constant temperature to described glass substrate and is handled.
2. chromium plate manufacturing process according to claim 1, it is characterized in that, in described step b, the transfer rate of described glass substrate is 0.3 meter/minute, the volumetric flow rate of described argon gas is 100 mark condition ml/min～180 mark condition ml/min, and the volumetric flow rate of described nitrogen is 220 mark condition ml/min～280 mark condition ml/min.
3. chromium plate manufacturing process according to claim 1, it is characterized in that, in described step c, the transfer rate of described glass substrate is 0.3 meter/minute, the volumetric flow rate of described argon gas is 140 mark condition ml/min～200 mark condition ml/min, and the volumetric flow rate of described oxygen is 240 mark condition ml/min～300 mark condition ml/min.
4. chromium plate manufacturing process according to claim 1 is characterized in that, in described step b and described step c, described sputtering voltage is 320 volts～580 volts, and described sputtering current is 1.5 amperes～3.2 amperes.
5. chromium plate manufacturing process according to claim 1 is characterized in that, among the described step a, utilizes the described glass substrate of washed with de-ionized water.
6. chromium plate manufacturing process according to claim 1 is characterized in that, after described step a, described glass substrate is heated to 330 degrees centigrade.
7. chromium plate manufacturing process according to claim 1 is characterized in that, in described steps d, described glass substrate carries out constant temperature at vacuum chamber to be handled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110115739 CN102181838B (en) | 2011-05-05 | 2011-05-05 | Chromium plate manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110115739 CN102181838B (en) | 2011-05-05 | 2011-05-05 | Chromium plate manufacturing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102181838A true CN102181838A (en) | 2011-09-14 |
| CN102181838B CN102181838B (en) | 2013-01-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110115739 Active CN102181838B (en) | 2011-05-05 | 2011-05-05 | Chromium plate manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102181838B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065432A (en) * | 2017-05-27 | 2017-08-18 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing chromium plate mask plate |
| CN107193184A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing high-precision chromium plate mask plate circuitous pattern |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4657648A (en) * | 1981-03-17 | 1987-04-14 | Osamu Nagarekawa | Method of manufacturing a mask blank including a modified chromium compound |
| JP2007133098A (en) * | 2005-11-09 | 2007-05-31 | Ulvac Seimaku Kk | Gray tone mask and manufacturing method thereof |
| CN101821676A (en) * | 2007-10-12 | 2010-09-01 | 爱发科成膜株式会社 | Method for manufacturing gray tone mask |
-
2011
- 2011-05-05 CN CN 201110115739 patent/CN102181838B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4657648A (en) * | 1981-03-17 | 1987-04-14 | Osamu Nagarekawa | Method of manufacturing a mask blank including a modified chromium compound |
| JP2007133098A (en) * | 2005-11-09 | 2007-05-31 | Ulvac Seimaku Kk | Gray tone mask and manufacturing method thereof |
| CN101821676A (en) * | 2007-10-12 | 2010-09-01 | 爱发科成膜株式会社 | Method for manufacturing gray tone mask |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107065432A (en) * | 2017-05-27 | 2017-08-18 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing chromium plate mask plate |
| CN107193184A (en) * | 2017-05-27 | 2017-09-22 | 中国电子科技集团公司第四十研究所 | A kind of method for preparing high-precision chromium plate mask plate circuitous pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102181838B (en) | 2013-01-09 |
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