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CN102141651A - Optical multiplexer/demultiplexer integrated based on surface plasmas and preparation method thereof - Google Patents

Optical multiplexer/demultiplexer integrated based on surface plasmas and preparation method thereof Download PDF

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CN102141651A
CN102141651A CN2011100861045A CN201110086104A CN102141651A CN 102141651 A CN102141651 A CN 102141651A CN 2011100861045 A CN2011100861045 A CN 2011100861045A CN 201110086104 A CN201110086104 A CN 201110086104A CN 102141651 A CN102141651 A CN 102141651A
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waveguide
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resonator cavity
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周治平
胡飞飞
易华祥
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Peking University
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Abstract

本发明公开了一种基于表面等离子体集成的光复用/解复用器,属于集成光电子技术领域。包括金属狭缝波导,以及在所述金属狭缝波导中形成的多个谐振腔和耦合区,所述金属狭缝波导包括一条总线波导以及多条分支波导,所有谐振腔通过一个耦合区与所述总线波导耦合连接,每个谐振腔还通过另一耦合区与一个分支波导耦合连接。本发明还提供了一种上述产品的制备方法。本发明可以极大地减小光电子器件的尺寸,并提高其集成度,可以应用于光子集成、光通信等领域。

Figure 201110086104

The invention discloses an optical multiplexing/demultiplexing device based on surface plasmon integration, which belongs to the technical field of integrated optoelectronics. It includes a metal slot waveguide, and a plurality of resonant cavities and coupling areas formed in the metal slot waveguide. The metal slot waveguide includes a bus waveguide and a plurality of branch waveguides, and all the resonant cavities are connected to the The above-mentioned bus waveguide is coupled and connected, and each resonant cavity is also coupled and connected with a branch waveguide through another coupling region. The invention also provides a preparation method of the above product. The invention can greatly reduce the size of the optoelectronic device and improve its integration degree, and can be applied in the fields of photon integration, optical communication and the like.

Figure 201110086104

Description

基于表面等离子体集成的光复用/解复用器及其制备方法Optical multiplexer/demultiplexer based on surface plasmon integration and its preparation method

技术领域technical field

本发明涉及集成光电子技术领域,尤其涉及一种基于表面等离子体集成的光复用/解复用器及其制备方法。The invention relates to the technical field of integrated optoelectronics, in particular to an optical multiplexer/demultiplexer based on surface plasmon integration and a preparation method thereof.

背景技术Background technique

众所周知,集成电路中信息的运载和处理能力遭遇不可克服的瓶颈,各部分之间的数据交换的速度面临相当大的限制,而采用光信号传输数据可以获得千倍的带宽,故而集成光子学给出了解决这一难题的一个有效途径。集成光学器件包括光源、光波导、光子晶体、光开关、光信号滤波器、光复用/解复用器、光调制器和光探测器等。其中,光复用/解复用器实现将多个波长信号光进行组合或者分解的功能,是光通信、光信号处理领域的重要器件之一。目前集成型的光复用/解复用器大多采用光学微环谐振腔或者光子晶体等结构构成。然而由于受到衍射极限和弯曲损耗等因素的限制,这种基于传统介质波导的光电子器件结构复杂、尺寸较大,阻碍了器件的小型化和大规模集成化。As we all know, the carrying and processing capacity of information in integrated circuits encounters an insurmountable bottleneck, and the speed of data exchange between various parts faces considerable restrictions, while the use of optical signals to transmit data can obtain a thousand times the bandwidth, so integrated photonics gives An effective way to solve this problem. Integrated optical devices include light sources, optical waveguides, photonic crystals, optical switches, optical signal filters, optical multiplexers/demultiplexers, optical modulators, and optical detectors. Among them, the optical multiplexer/demultiplexer realizes the function of combining or decomposing multiple wavelength signal lights, and is one of the important devices in the field of optical communication and optical signal processing. Most of the current integrated optical multiplexers/demultiplexers are composed of optical microring resonators or photonic crystals. However, due to the limitations of diffraction limit and bending loss, the optoelectronic device based on the traditional dielectric waveguide has complex structure and large size, which hinders the miniaturization and large-scale integration of the device.

图1为采用光学微环谐振结构的传统光复用/解复用器的结构示意图,它是基于介质波导(介质波导的结构如图2所示)的,这类结构尺寸一般很大。例如以目前的研究水平来说,单个微环谐振腔的半径至少需要几个微米,要实现多个波长的复用/解复用功能,就需要多个微环进行级联,这样整个器件的尺寸就很大,结构也比较复杂。Figure 1 is a schematic structural diagram of a traditional optical multiplexer/demultiplexer using an optical microring resonator structure, which is based on a dielectric waveguide (the structure of the dielectric waveguide is shown in Figure 2), and the size of this type of structure is generally large. For example, based on the current research level, the radius of a single microring resonator needs to be at least several microns. To realize the multiplexing/demultiplexing function of multiple wavelengths, multiple microrings need to be cascaded, so that the entire device The size is large and the structure is more complicated.

近年来,随着纳米光电子技术的不断进步,一种全新的波导结构——表面等离子体(Surface Plasmon Polaritons,SPPs)波导成为集成光学领域的新兴研究方向。表面等离子体存在于金属与介质界面附近,其场强在界面处达到最大,且在界面两侧均沿垂直于界面的方向呈指数衰减。它具有较强的场限制特性,能够将能量约束在空间尺寸远小于其自由空间波长的区域。特别是金属/介质/金属的金属狭缝波导模式,它能够实现对光场的亚波长约束,在纳米尺度上控制和限制光场。另外,利用金属/介质界面天然的反射端面,一些特殊的谐振腔结构可以被很好地被用于构造光学滤波器或者光复用/解复用器件。其中,金属/介质/金属波导又称为金属狭缝波导,金属狭缝波导是表面等离子体波导的一种,是由两块相隔一定间距的金属板组成,该波导结构如图3所示,波导的宽度为w。在此波导结构中,光场会被限制在中间的介质层中传输。In recent years, with the continuous progress of nano-optoelectronics technology, a new waveguide structure—Surface Plasmon Polaritons (SPPs) waveguide has become an emerging research direction in the field of integrated optics. Surface plasmon exists near the interface between metal and medium, and its field strength reaches the maximum at the interface, and decays exponentially along the direction perpendicular to the interface on both sides of the interface. It has strong field confinement properties and can confine energy to a region whose spatial size is much smaller than its free-space wavelength. Especially the metal/dielectric/metal metal slit waveguide mode, which can realize the subwavelength confinement of the optical field, and control and confine the optical field at the nanoscale. In addition, some special resonant cavity structures can be well used to construct optical filters or optical multiplexing/demultiplexing devices by utilizing the natural reflective end faces of the metal/dielectric interface. Among them, the metal/dielectric/metal waveguide is also called the metal slot waveguide. The metal slot waveguide is a kind of surface plasmon waveguide, which is composed of two metal plates separated by a certain distance. The waveguide structure is shown in Figure 3. The width of the waveguide is w. In this waveguide structure, the optical field will be confined to the middle dielectric layer.

发明内容Contents of the invention

(一)要解决的技术问题(1) Technical problems to be solved

针对传统光复用/解复用器结构复杂,器件尺寸较大等缺陷,本发明要解决的技术问题是如何提供一种新型的基于表面等离子体集成的光复用/解复用器及其制备方法,以极大地减小光电子器件的尺寸,并提高其集成度。Aiming at the defects of traditional optical multiplexer/demultiplexer with complex structure and large device size, the technical problem to be solved by the present invention is how to provide a novel optical multiplexer/demultiplexer based on surface plasmon integration and its preparation method , to greatly reduce the size of optoelectronic devices and improve their integration.

(二)技术方案(2) Technical solution

为解决上述技术问题,本发明提供了一种基于表面等离子体集成的光复用/解复用器,包括金属狭缝波导,以及在所述金属狭缝波导中形成的多个谐振腔和耦合区,所述金属狭缝波导包括一条总线波导以及多条分支波导,所有谐振腔通过一个耦合区与所述总线波导耦合连接,每个谐振腔还通过另一耦合区与一个分支波导耦合连接。In order to solve the above technical problems, the present invention provides an optical multiplexer/demultiplexer based on surface plasmon integration, including a metal slit waveguide, and multiple resonant cavities and coupling regions formed in the metal slit waveguide , the metal slot waveguide includes a bus waveguide and a plurality of branch waveguides, all resonators are coupled to the bus waveguide through a coupling region, and each resonator is also coupled to a branch waveguide through another coupling region.

其中,所述耦合区为采用倏逝耦合方式形成的耦合区或者采用孔径耦合方式形成的耦合区。Wherein, the coupling region is a coupling region formed by evanescent coupling or a coupling region formed by aperture coupling.

其中,所述谐振腔垂直或者平行于总线波导。Wherein, the resonant cavity is perpendicular or parallel to the bus waveguide.

其中,所述谐振腔为法布里-珀罗谐振腔结构。Wherein, the resonant cavity is a Fabry-Perot resonant cavity structure.

其中,所有谐振腔位于总线波导的一侧或者分布于总线波导的两侧。Wherein, all resonant cavities are located on one side of the bus waveguide or distributed on both sides of the bus waveguide.

其中,采用倏逝耦合方式形成耦合区时,波导与对应谐振腔之间的耦合强度由波导与对应谐振腔之间的耦合距离决定。Wherein, when the coupling region is formed by the evanescent coupling method, the coupling strength between the waveguide and the corresponding resonant cavity is determined by the coupling distance between the waveguide and the corresponding resonant cavity.

其中,采用孔径耦合方式形成耦合区时,波导与对应谐振腔之间的耦合强度由耦合区的耦合孔径的宽度来决定。Wherein, when the coupling region is formed by aperture coupling, the coupling strength between the waveguide and the corresponding resonant cavity is determined by the width of the coupling aperture of the coupling region.

其中,所述谐振腔垂直于总线波导时,分支波导与对应谐振腔之间的耦合位置位于该谐振腔的端面或侧面;所述谐振腔平行于总线波导时,分支波导与对应谐振腔之间的耦合位置位于该谐振腔的端面或侧面。Wherein, when the resonant cavity is perpendicular to the bus waveguide, the coupling position between the branch waveguide and the corresponding resonant cavity is located on the end face or side of the resonant cavity; when the resonant cavity is parallel to the bus waveguide, the coupling position between the branch waveguide and the corresponding resonant cavity The coupling position is located on the end face or side of the resonator.

其中,相邻的谐振腔之间的距离大于40nm。Wherein, the distance between adjacent resonant cavities is greater than 40nm.

本发明还提供了一种基于表面等离子体集成的光复用/解复用器的制备方法,包括以下步骤:The present invention also provides a method for preparing an optical multiplexer/demultiplexer based on surface plasmon integration, comprising the following steps:

S1、在衬底上镀上一层金属层;S1, plating a layer of metal layer on the substrate;

S2、在所述金属层上刻蚀所述的光复用/解复用器。S2. Etching the optical multiplexer/demultiplexer on the metal layer.

(三)有益效果(3) Beneficial effects

本发明采用金属狭缝波导结构,可以极大地减小光电子器件的尺寸,并提高其集成度;通过谐振腔之间的距离的设计可以避免相邻分支波导的模场间的相互干扰;通过耦合区结构的设计,可以降低对加工精度要求(孔径耦合的结构可以降低加工工艺的要求)。The invention adopts the metal slit waveguide structure, which can greatly reduce the size of the optoelectronic device and improve its integration; through the design of the distance between the resonant cavities, the mutual interference between the mode fields of adjacent branch waveguides can be avoided; through the coupling The design of the zone structure can reduce the requirements for processing accuracy (the structure of aperture coupling can reduce the requirements for processing technology).

附图说明Description of drawings

图1是传统的光复用/解复用器的结构示意图;Fig. 1 is the structural representation of traditional optical multiplexing/demultiplexing device;

图2是图1的介质波导的结构示意图;Fig. 2 is a schematic structural diagram of the dielectric waveguide of Fig. 1;

图3是金属狭缝波导的结构示意图;Fig. 3 is a structural schematic diagram of a metal slot waveguide;

图4、5是本发明的两个光复用/解复用器实施例的俯视图;4 and 5 are top views of two optical multiplexing/demultiplexing device embodiments of the present invention;

图6是一个1×6光复用/解复用器的透射频谱图;Fig. 6 is a transmission spectrum diagram of a 1 * 6 optical multiplexing/demultiplexing device;

图7是本发明另一实施例的俯视图;Fig. 7 is a top view of another embodiment of the present invention;

图8是本发明的方法流程图;Fig. 8 is a flow chart of the method of the present invention;

图9是侧面耦合输出结构示意图。FIG. 9 is a schematic diagram of a side coupling output structure.

具体实施方式Detailed ways

下面结合附图和实施例,对本发明的具体实施方式作进一步详细说明。以下实施例用于说明本发明,但不用来限制本发明的范围。The specific implementation manners of the present invention will be described in further detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

如图4、5所示,为1×N光复用/解复用器结构示意图。其具有复用和解复用的两种功能。“1×N”表明是N路的光复用/解复用结构,“1”表明该结构中具有一根总线波导,“N”表示有N根分支波导(总线波导和分支波导均由金属/介质/金属波导中的介质组成)。例如解复用时,N个波长的信号光(或者说含有N个波长信号的光场)都在总线波导中输入,然后N个波长的信号光可以分别从这N根分支波导中输出,故称为“1×N光复用/解复用器”(也可参照图1)。As shown in Figures 4 and 5, they are structural schematic diagrams of a 1×N optical multiplexer/demultiplexer. It has two functions of multiplexing and demultiplexing. "1×N" indicates that it is an optical multiplexing/demultiplexing structure of N channels, "1" indicates that there is a bus waveguide in the structure, and "N" indicates that there are N branch waveguides (both the bus waveguide and the branch waveguide are made of metal/ dielectric/dielectric composition in metal waveguides). For example, during demultiplexing, the signal lights of N wavelengths (or the optical field containing N wavelength signals) are all input in the bus waveguide, and then the signal lights of N wavelengths can be output from the N branch waveguides respectively, so It is called "1×N optical multiplexing/demultiplexing device" (also refer to Figure 1).

图4、5的两种结构均包括金属狭缝波导,以及在所述金属狭缝波导中形成的多个谐振腔和耦合区,所述金属狭缝波导包括一条总线波导以及多条分支波导,所有谐振腔通过一个耦合区(图4中为倏逝耦合区,图5中为孔径耦合区)与所述总线波导耦合连接,每个谐振腔还通过另一耦合区(图4中由每个分支波导与对应谐振腔之间的金属组成,图5中由每个分支波导与对应谐振腔之间的介质组成)与一个分支波导耦合连接。谐振腔均垂直于总线波导,分支波导与对应谐振腔之间的耦合位置位于该谐振腔的端面(也可以位于谐振腔侧面,如图9所示)。所述谐振腔为法布里-珀罗谐振腔结构。所有谐振腔位于总线波导的一侧。如图4、5所示的金属狭缝波导(即金属/介质/金属波导)中的介质为任意一般介质材料(例如空气)。The two structures in Figures 4 and 5 both include a metal slot waveguide, and a plurality of resonant cavities and coupling regions formed in the metal slot waveguide, the metal slot waveguide includes a bus waveguide and a plurality of branch waveguides, All resonators are coupled and connected to the bus waveguide through a coupling region (evanescent coupling region in FIG. 4, and aperture coupling region in FIG. 5), and each resonator also passes through another coupling region (in FIG. The metal between the branch waveguide and the corresponding resonant cavity, in FIG. 5 consists of the medium between each branch waveguide and the corresponding resonant cavity) is coupled and connected with one branch waveguide. The resonant cavities are all perpendicular to the bus waveguide, and the coupling position between the branch waveguide and the corresponding resonant cavity is located on the end face of the resonant cavity (or on the side of the resonant cavity, as shown in FIG. 9 ). The resonant cavity is a Fabry-Perot resonant cavity structure. All resonators are located on one side of the bus waveguide. The medium in the metal slot waveguide (ie metal/dielectric/metal waveguide) shown in Figures 4 and 5 is any general dielectric material (such as air).

谐振腔长度和宽度可以在纳米/微米量级上的任意尺寸。通过对谐振腔的长度或宽度的合理设计(谐振腔的宽度优选为0至几百个纳米之间,长度为0至几个微米之间)可以实现对特定波长的光复用/解复用功能。相邻通道的谐振腔之间的距离为大于40nm的任意值,这样可以避免相邻分支波导的模场间的相互干扰。一个输出端口(分支波导)对应一个光信号通道(即图4、5中的“通道”)。The resonant cavity length and width can be of any size on the nanometer/micrometer scale. The optical multiplexing/demultiplexing function for specific wavelengths can be realized by rationally designing the length or width of the resonant cavity (the width of the resonant cavity is preferably between 0 and hundreds of nanometers, and the length is between 0 and several microns) . The distance between the resonant cavities of adjacent channels is any value larger than 40nm, so as to avoid the mutual interference between the mode fields of adjacent branch waveguides. One output port (branch waveguide) corresponds to one optical signal channel (that is, the "channel" in Figures 4 and 5).

图4采用倏逝耦合的方式实现,此时,波导(总线波导或分支波导)与对应谐振腔之间的耦合强度由波导(相应地为总线波导或分支波导)与对应谐振腔之间的耦合距离决定,耦合距离越大,波导与谐振腔之间的耦合强度越小,各个通道中透射频谱带宽就会变窄。例如:当耦合区距离进一步变大时,图6中6条透射谱线的宽度会变窄。工作原理为:在总线波导中传播的不同波长的光场能够以倏逝波的方式耦合进入不同谐振腔中,并在不同的分支波导中输出,以此实现解复用功能。同理,当光场从分支波导输入,也可以实现复用功能。Figure 4 is realized by evanescent coupling. At this time, the coupling strength between the waveguide (bus waveguide or branch waveguide) and the corresponding resonant cavity is determined by the coupling between the waveguide (respectively bus waveguide or branch waveguide) and the corresponding resonant cavity. Depending on the distance, the larger the coupling distance, the smaller the coupling strength between the waveguide and the resonant cavity, and the narrower the transmission spectrum bandwidth in each channel. For example: when the coupling region distance is further increased, the width of the 6 transmission lines in Figure 6 will be narrowed. The working principle is: the optical fields of different wavelengths propagating in the bus waveguide can be coupled into different resonant cavities in the form of evanescent waves, and output in different branch waveguides, so as to realize the demultiplexing function. Similarly, when the optical field is input from the branch waveguide, the multiplexing function can also be realized.

图5采用孔径耦合的方式实现,此时波导(总线波导或分支波导)与对应谐振腔之间的耦合强度由耦合区的耦合孔径的宽度来决定,孔径宽度越小,波导与谐振腔之间的耦合强度越小,各个通道中透射频谱带宽就会变窄。工作原理和上面类似,不同之处是不同波长的光场是通过孔径的方式耦合进入谐振腔,并在腔内产生谐振。孔径耦合方式是金属/介质/金属波导结构中的一种特别的耦合方式,其无法在例如图2所示的传统介质波导中实现。Figure 5 is realized by aperture coupling. At this time, the coupling strength between the waveguide (bus waveguide or branch waveguide) and the corresponding resonant cavity is determined by the width of the coupling aperture in the coupling area. The smaller the aperture width, the greater the gap between the waveguide and the resonant cavity. The smaller the coupling strength of , the narrower the transmission spectral bandwidth in each channel. The working principle is similar to the above, the difference is that the light fields of different wavelengths are coupled into the resonant cavity through the aperture and generate resonance in the cavity. The aperture coupling method is a special coupling method in the metal/dielectric/metal waveguide structure, which cannot be realized in the traditional dielectric waveguide shown in FIG. 2 .

上述两种耦合方式结构的比较:Comparison of the structure of the above two coupling methods:

倏逝耦合方式:由于SPPs模式电磁场在金属中的渗透(趋肤)深度小于30nm,故只有当波导和谐振腔之间的耦合距离(图5中的t)小于30nm时,才具有较高的耦合强度,电磁场才能有效的倏逝耦合进入谐振腔,这就要求制作工艺中需要较高的加工精度。Evanescent coupling mode: Since the penetration (skin) depth of the SPPs mode electromagnetic field in the metal is less than 30nm, only when the coupling distance between the waveguide and the resonant cavity (t in Figure 5) is less than 30nm, it has a higher Only when the coupling strength is high, the electromagnetic field can be effectively evanescently coupled into the resonant cavity, which requires high processing precision in the manufacturing process.

孔径耦合方式:耦合强度与耦合距离t无关,而是通过改变耦合孔径的宽度来调节,不受30nm的渗透(趋肤)深度的限制,故更容易加工。Aperture coupling mode: The coupling strength has nothing to do with the coupling distance t, but is adjusted by changing the width of the coupling aperture, which is not limited by the penetration (skin) depth of 30nm, so it is easier to process.

图6是一个1×6光复用/解复用器实例的透射频谱图,1~6分别为通道1~通道6。通过选择合适的谐振腔结构参数(例如长度),可以实现对特定波长的解复用功能。结构如图4所示,此时N=6,总线波导和分支波导的宽度w=50nm,谐振腔的宽度Wt=50nm,耦合距离t=15nm,图6中从左到右依次为通道1~通道6的透射谱线,与通道1~通道6对应的6个谐振腔的长度分别为250nm、285nm、320nm、355nm、390nm以及425nm。FIG. 6 is a transmission spectrum diagram of an example of a 1×6 optical multiplexer/demultiplexer, 1 to 6 are channels 1 to 6, respectively. The demultiplexing function for specific wavelengths can be realized by selecting appropriate structural parameters of the resonant cavity (for example, length). The structure is shown in Figure 4. At this time, N=6, the width of the bus waveguide and the branch waveguide w=50nm, the width of the resonant cavity Wt=50nm, and the coupling distance t=15nm. For the transmission line of channel 6, the lengths of the six resonant cavities corresponding to channels 1 to 6 are 250nm, 285nm, 320nm, 355nm, 390nm and 425nm, respectively.

如图7所示,本发明还提供了另一种结构的光复用/解复用器。其中,谐振腔平行于总线波导,分布于总线波导的两侧,分支波导与对应谐振腔之间的耦合位置位于该谐振腔的侧面。As shown in FIG. 7, the present invention also provides an optical multiplexer/demultiplexer with another structure. Wherein, the resonant cavity is parallel to the bus waveguide and distributed on both sides of the bus waveguide, and the coupling position between the branch waveguide and the corresponding resonant cavity is located on the side of the resonant cavity.

如图8所示,本发明还提供了一种基于表面等离子体集成的光复用/解复用器的制备方法,包括以下步骤:As shown in Figure 8, the present invention also provides a method for preparing an optical multiplexer/demultiplexer based on surface plasmon integration, comprising the following steps:

S1、在衬底上镀上一层金属层;该衬底为非吸收性材料,例如二氧化硅。S1. Plating a metal layer on the substrate; the substrate is a non-absorbing material, such as silicon dioxide.

S2、在所述金属层上刻蚀所述的光复用/解复用器。S2. Etching the optical multiplexer/demultiplexer on the metal layer.

由以上实施例可以看出,本发明采用金属/介质/金属的波导结构,它不存在导波模式(图1)的截止宽度,故波导宽度可以为纳米/微米量级的任意尺寸,例如,波导的宽度可以小到几十纳米甚至几纳米,而传统的介质波导(图2)的尺寸至少为几百纳米甚至微米量级,因此本发明可以极大地减小光电子器件的尺寸,并提高其集成度,可以应用于光子集成、光通信等领域。As can be seen from the above embodiments, the present invention adopts a metal/medium/metal waveguide structure, which does not have a cut-off width of the guided wave mode (Fig. 1), so the waveguide width can be any size of nano/micron order, for example, The width of the waveguide can be as small as tens of nanometers or even several nanometers, while the size of the traditional dielectric waveguide (Fig. 2) is at least hundreds of nanometers or even microns, so the present invention can greatly reduce the size of the optoelectronic device and improve its The degree of integration can be applied to photonic integration, optical communication and other fields.

以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变型,这些改进和变型也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the technical principle of the present invention, some improvements and modifications can also be made, these improvements and modifications It should also be regarded as the protection scope of the present invention.

Claims (10)

1. one kind based on the integrated light multiplexing demultiplexing device of surface plasma, it is characterized in that, comprise the metal narrow slit wave-guide, and a plurality of resonator cavitys and the coupled zone that in described metal narrow slit wave-guide, form, described metal narrow slit wave-guide comprises a bus waveguide and many branch-waveguides, all resonator cavitys are of coupled connections by a coupled zone and described bus waveguide, and each resonator cavity also is of coupled connections by another coupled zone and a branch-waveguide.
2. smooth multiplexing demultiplexing device as claimed in claim 1 is characterized in that, described coupled zone is for adopting suddenly the die coupled zone of coupling scheme formation or the coupled zone of adopting aperture-coupled mode to form.
3. smooth multiplexing demultiplexing device as claimed in claim 1 is characterized in that described resonator cavity is vertical or parallel to bus waveguide.
4. smooth multiplexing demultiplexing device as claimed in claim 3 is characterized in that, described resonator cavity is the Fabry-Perot cavity structure.
5. smooth multiplexing demultiplexing device as claimed in claim 1 is characterized in that, all resonator cavitys are positioned at a side of bus waveguide or are distributed in the both sides of bus waveguide.
6. smooth multiplexing demultiplexing device as claimed in claim 2 is characterized in that, when adopting the coupling scheme that suddenly die to form the coupled zone, the stiffness of coupling between waveguide and the corresponding resonator cavity is determined by waveguide and coupling distance between the corresponding resonator cavity.
7. smooth multiplexing demultiplexing device as claimed in claim 2 is characterized in that, when adopting aperture-coupled mode to form the coupled zone, the stiffness of coupling between waveguide and the corresponding resonator cavity is decided by the width in the coupling aperture of coupled zone.
8. smooth multiplexing demultiplexing device as claimed in claim 3 is characterized in that, described resonator cavity is during perpendicular to bus waveguide, and branch-waveguide and the coupling position between the corresponding resonator cavity are positioned at the end face or the side of this resonator cavity; When described resonator cavity was parallel to bus waveguide, branch-waveguide and the coupling position between the corresponding resonator cavity were positioned at the end face or the side of this resonator cavity.
9. smooth multiplexing demultiplexing device as claimed in claim 1 is characterized in that the distance between the adjacent resonator cavity is greater than 40nm.
10. the preparation method based on the integrated light multiplexing demultiplexing device of surface plasma is characterized in that, may further comprise the steps:
S1, on substrate, plate the layer of metal layer;
S2, on described metal level each described smooth multiplexing demultiplexing device of etching claim 1~9.
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CN106019473A (en) * 2016-07-14 2016-10-12 陕西师范大学 Micro-nano-structured wave division multiplexer based on Ag/air medium
CN106646737A (en) * 2017-02-20 2017-05-10 华南师范大学 Metal-like photonic crystal mixing waveguide coupler
CN108519716A (en) * 2018-05-24 2018-09-11 华南师范大学 Optical logic device and method for multi-bit input with microcavity structure
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