CN102138285B - High-frequency switch module - Google Patents
High-frequency switch module Download PDFInfo
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- CN102138285B CN102138285B CN200980134681.8A CN200980134681A CN102138285B CN 102138285 B CN102138285 B CN 102138285B CN 200980134681 A CN200980134681 A CN 200980134681A CN 102138285 B CN102138285 B CN 102138285B
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- 238000004891 communication Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 10
- 101100282369 Caenorhabditis elegans gcc-2 gene Proteins 0.000 description 4
- 101100388543 Caenorhabditis elegans glt-1 gene Proteins 0.000 description 4
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- 101100532456 Rattus norvegicus Slc28a2 gene Proteins 0.000 description 2
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- 230000003071 parasitic effect Effects 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20336—Comb or interdigital filters
- H01P1/20345—Multilayer filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Transceivers (AREA)
- Electronic Switches (AREA)
Abstract
A high-frequency switch module (1) includes a switch element (SW1), high-frequency circuits (2 to 6), and a GND circuit (7). The switch element (SW1) has an antenna port (Pa1), switch ports (Ps1 to Ps6), and an FET switch. The FET switch switches connection between the switch ports (Ps1 to Ps6) and the antenna port (Pa1). The high-frequency circuits (2 to 6) connect one of the switch ports (Ps1 to Ps6) to a circuit which processes a signal. The GND circuit (7) directly connects a GND electrode to the switch port (Ps6) not connected to the high-frequency circuits (2 to 6).
Description
Technical field
The present invention relates to the high-frequency switch module that a kind of transmitting-receiving of the signal of communication to characteristic frequency is switched, particularly used the high-frequency switch module of FET switch.
Background technology
Current, in the communicators such as mobile phone, adopt various communications, for example, in Europe, adopt the GSM mode of multiband.In GSM mode, there is the different signal of communication of multiple used frequency band (receiving and transmitting signal), as frequency band, there is 850MHz frequency band, 900MHz frequency band, 1800MHz frequency band and 1900MHz frequency band.In addition, as follow-on communication, also there is the UMTS mode of 2100MHz frequency band in other.In the leading section of the communicator of the signal of communication of so multiple frequency bands being received and dispatched with an antenna, the high-frequency switch module (for example,, with reference to patent documentation 1) that may utilize the signal transmission path using till FET switch transtation mission circuit or the receiving circuit to the signal of communication from antenna to target band to switch.
In patent documentation 1, disclose a kind of high-frequency switch module that possesses SPnT (hilted broadsword is thrown (Single Pole n throw) more) switch element that has used GaAsFET switch.SPnT switch element comprises an antenna port and n switch port, in each switch port, is connected with any one in n altogether above transtation mission circuit and the receiving circuit that is arranged at each frequency band.
Patent documentation 1: Japanese Patent Laid-Open 2005-197855 communique
Summary of the invention
Because the quantity of communication or kind are according to national difference and difference, circuit quantity or the circuit kind that therefore should be connected from switch element are different to the specification of each communicator.Therefore, in the past, need that the structure of the installation base plate of the structure to switch element and switch element designs according to the quantity of communication or kind respectively, thereby cause extra design time and manufacturing cost because designing respectively, expect to reduce this extra design time and manufacturing cost.
In addition, general in the leading section of communicator, between the transmission circuit being connected with switch element and antenna, need to improve the isolation of signal of communication.But having used in the high-frequency switch module of FET switch, signal easily detours via FET switch, thereby needs counter-measure.
Therefore, the object of the present invention is to provide a kind of high-frequency switch module, this high-frequency switch module can easily be tackled quantity or the diverse specification of communication, and isolation characteristic is good.
High-frequency switch module of the present invention comprises switch element, high-frequency circuit and GND circuit.Switch element comprises antenna port, multiple switch port and FET switch.Antenna port is connected with the antenna that signal of communication is received and dispatched.Each switch port alternatively to and antenna port between be connected and select.FET switch switches being connected between switch port and antenna.High-frequency circuit is connected any one in multiple switch port with the signal of communication treatment circuit that signal of communication is processed.GND circuit at least comprises the empty switch port not being connected with high-frequency circuit in multiple switch port, and described empty switch port directly or be connected with GND electrode via the impedance part being made up of circuit element.
In this structure, some switch port that switch element is possessed are as the switch port being connected with high-frequency circuit (hereinafter referred to as connecting valve port), using other switch port as the switch port not being connected with high-frequency circuit (hereinafter referred to as empty switch port).Therefore, in the time changing the quantity of high-frequency circuit or kind, can form high-frequency switch module with standardized switch element, and without the structure that changes switch element.
In this case, suppose not connect whatever and be used in empty switch port,, in the time that antenna port is connected with empty switch port, approach infinitely-great characteristic impedance because antenna port has, therefore input signal total reflection in empty switch port.Therefore, reflected signal leaks to other switch port through FET switch, thereby the isolation between antenna port and connecting valve port is worsened.
Thereby this structure is connected GND circuit with empty switch port.Like this, in the time that antenna port is connected with empty switch port, due between FET switch and antenna port almost in ground state, therefore, from signal total reflection between antenna port and FET switch of antenna port, thereby can not flow into FET switch.Therefore, can be to other connecting valve port transmission unwanted signal.Therefore, the input signal that leaks to connecting valve port from antenna port can be reduced, thereby the isolation between antenna port and connecting valve port can be improved.
In the time that the FET switch pair switch port being connected with antenna port is switched, empty switch port also can temporarily be connected with antenna port.
Impedance part preferably includes the resistance that characteristic impedance is 50 Ω.In this case, in impedance part, input signal is consumed by resistance, thereby can improve isolation characteristic.
FET switch can be also GaAs semiconductor FET switch, and in this case, impedance part preferably adopts the capacitor being connected in series between sky switch port and GND electrode.Generally, in GaAs semiconductor FET switch, if empty switch port is directly connected with GND electrode, more difficult appropriate enforcement switch motion.Thereby, in this structure, make impedance part possess capacitor, make impedance phase to the signal of assigned frequency close to 0, thereby can on antenna port, carry out total reflection to this signal so that the switch motion of GaAs semiconductor FET switch is able to appropriate enforcement.
Switch element, high-frequency circuit and GND circuit preferably form as one with the alternately laminated ceramic multi-layer baseplate that has insulator layer and cloth line electrode.In this case, realize miniaturization thereby can form high-frequency switch module with chip piece, in addition, compared with adopting when separate structure, can reduce the loss causing because of the wiring between components and parts.
Ceramic multi-layer baseplate preferably has GND electrode in the substrate lamination surface different from the installed surface of switch element, and GND circuit preferably makes connected switch port be connected with GND electrode via through hole electrode.In this structure, can not produce unwanted parasitic component from empty switch port to GND circuit.In addition, because this through hole electrode is not easy and other cloth line electrode magnetic Field Coupling, therefore can improve the isolation between element.
The inside of ceramic multi-layer baseplate preferably includes multiple GND electrodes, described GND circuit preferably makes connected described empty switch port via the through hole electrode that is formed at described ceramic multi-layer baseplate inside, on the stacked direction of described insulator layer, the GND electrode directly arranging with the installed surface of the most close described switch element is connected.
Multiple switch port preferred disposition are in the peripheral part of an interarea of described switch element, and described empty switch port preferred disposition becomes to be clipped between described multiple switch port.
High-frequency switch module of the present invention comprises switch element and high-frequency circuit, among multiple switch port, at least makes two switch port be connected with a high-frequency circuit.
In the present invention, some switch port that switch element is possessed are carried out use as connecting valve port, and other switch port is used as empty switch port.Thus, in the time that the quantity to high-frequency circuit or kind change, can form high-frequency switch module with standardized switch element.
In addition, use owing to empty switch port not being set as to off-state, therefore can reduce the input signal that leaks to connecting valve port from antenna port, thereby can improve the isolation between antenna port and connecting valve port.
Therefore, can utilize standardized switch element to form the high-frequency switch module that isolation characteristic is good.
Brief description of the drawings
Fig. 1 is the brief block diagram that possesses the leading section of the related high-frequency switch module of execution mode 1.
Fig. 2 is the profile of this switch module.
Fig. 3 is the profile of this switch module.
Fig. 4 is the profile of this switch module.
Fig. 5 is the element loading surface figure of this switch module.
Fig. 6 is the brief block diagram that possesses the leading section of the related high-frequency switch module of execution mode 2.
Fig. 7 is the figure that simulation result is described.
Fig. 8 is the brief block diagram that possesses the leading section of the related high-frequency switch module of execution mode 3.
Fig. 9 is the brief block diagram that possesses the leading section of the related high-frequency switch module of execution mode 4.
Figure 10 is the brief block diagram that possesses the leading section of the related high-frequency switch module of execution mode 5.
Embodiment
With reference to Fig. 1, the related high-frequency switch module of embodiments of the present invention 1 is described.The high-frequency switch module of present embodiment forms the leading section of mobile phone.
Fig. 1 is the brief block diagram that possesses the leading section of the high-frequency switch module of present embodiment.
Leading section 100 comprises high-frequency switch module 1.High-frequency switch module 1 is that each inscape and ceramic multi-layer baseplate are arranged to all-in-one-piece module, has external connection terminals Po1～Po11.
External connection terminals Po7 is connected with antenna ANT.Driving voltage VDD input external connection terminals Po8.Control signal Vc1～Vc3 as binary signal inputs respectively external connection terminals Po9～Po11.External connection terminals Po1 carries out input and output to UMTS2100MHz signal of communication.External connection terminals Po2 inputs GSM850MHz transmitted signal or GSM900MHz transmitted signal.External connection terminals Po3 inputs GSM1800MHz transmitted signal or GSM1900MHz transmitted signal.External connection terminals Po4 receives signal to GSM900MHz and exports.External connection terminals Po5 receives signal to GSM1800MHz and exports.External connection terminals Po6 receives signal to GSM1900MHz and exports.
This high-frequency switch module 1 comprises switch element SW1, high-frequency circuit 2～6 and GND circuit 7.Switch element SW1 is SP6T (hilted broadsword six is thrown (Single Pole 6 throw)) type switch, comprises semiconductor FET switch (not shown), antenna port Pa1, drives port Pw1, control port Pc1～Pc3 and switch port Ps1～Ps6.
Semiconductor FET switch is according to the combination of the each binary signal of control signal Vc1～Vc3, and any one in switch port Ps1～Ps6 is connected with antenna port Pa1.
Antenna port Pa1 is connected with external connection terminals Po7 via reactance component L1.The tie point of external connection terminals Po7 and reactance component L1 is via capacitor C1 ground connection.Drive port Pw1 to be connected with external connection terminals Po8.Control port Pc1～Pc3 is connected with external connection terminals Po9～Po11 respectively.Switch port Ps1 is connected with external connection terminals Po2 with external connection terminals Po1 via high-frequency circuit 2.Switch port Ps2 is connected with external connection terminals Po3 via high-frequency circuit 3.Switch port Ps3 is connected with external connection terminals Po4 via high-frequency circuit 4.Switch port Ps4 is connected with external connection terminals Po5 via high-frequency circuit 5.Switch port Ps5 is connected with external connection terminals Po6 via high-frequency circuit 6.Switch port Ps6 is connected with GND circuit 7.
High-frequency circuit 2 comprise be arranged at the high pass filter between switch port Ps1 and external connection terminals Po1 and be arranged at switch port Ps1 and external connection terminals Po2 between two-stage low pass filter.This high pass filter is formed by capacitor Cc1, Cc2, Ct2 and circuit Lt2, and UMTS2100MHz signal of communication is passed through.In addition, this two-stage low pass filter is formed by capacitor GCc1, GCc2, GCu2, GCu3 and circuit GLt1, GLt2, GSM850MHz transmitted signal or GSM900MHz transmitted signal are passed through, made the high order harmonic component such as second harmonic and the triple-frequency harmonics decay of these transmitted signals.
High-frequency circuit 3 comprises the two-stage low pass filter being arranged between switch port Ps2 and external connection terminals Po3.This two-stage low pass filter is formed by capacitor DCc1, Dcu1, Dcu2 and circuit DLt1, DLt2, GSM1800MHz transmitted signal or GSM1900MHz transmitted signal are passed through, made the high order harmonic component such as second harmonic and the triple-frequency harmonics decay of these transmitted signals.
High-frequency circuit 4 comprises the SAW filter being arranged between switch port Ps3 and external connection terminals Po4.This SAW filter passes through GSM900MHz reception signal.
High-frequency circuit 5 comprises the SAW filter being arranged between switch port Ps4 and external connection terminals Po5.This SAW filter passes through GSM1800MHz reception signal.
High-frequency circuit 6 comprises the SAW filter being arranged between switch port Ps5 and external connection terminals Po6.This SAW filter passes through GSM1900MHz reception signal.
GND circuit 7 is directly connected switch port Ps6 with GND electrode.
Adopting in the high-frequency switch module 1 of this structure, the quantity increase that causes high-frequency circuit in the design alteration because of high-frequency switch module etc., can easily make new high-frequency circuit be connected with switch port Ps6, to use switch element SW1.
In addition, in the time utilizing semiconductor FET switch to connect switching to switch port, even switch port Ps6 temporarily in the state of antenna port Pa1 conducting, because empty switch port Ps6 is connected with GND circuit 7, the therefore also basic state in ground connection of antenna port Pa1.Therefore, from signal total reflection between antenna port Pa1 and semiconductor FET switch of antenna port Pa1 input, thereby signal can not input to sky switch port Ps6.Therefore,, even if be provided with as shown in the embodiment sky switch port, also can guarantee the isolation between antenna port and switch port.
Fig. 2～4th, the profile of high-frequency switch module 1, is from the installed surface figure that each dielectric layer (1)～(17) are observed to high-frequency switch module 1 in order.In addition, Fig. 5 is the figure that the element loading surface from being arranged at a side contrary with the installed surface of high-frequency switch module 1 is observed.Mark shown in each figure is corresponding with the mark shown in Fig. 1, and the circular mark in figure all represents through hole.
In dielectric layer (1), on the installed surface of high-frequency switch module 1, be formed with earth terminal GND and external connection terminals Po1～Po11, high-frequency switch module 1 is installed on outside circuit substrate by this installed surface.In addition, on the element loading surface of dielectric layer (17), be mounted with switch element SW1, reactance component L1, filter element GSMSAW and filter element DCSSAW.Filter element GSMSAW is the SAW filter of high-frequency circuit 4, and filter element DCSSAW is the element of dual model that the SAW filter of the SAW filter of high-frequency circuit 5 and high-frequency circuit 6 is combined as a whole.
In dielectric layer (2), be formed with the inside GND electrode with the earth terminal GND conducting of dielectric layer (1).In dielectric layer (3), be formed with the electrode of the capacitor Ct2, the GCu3 that form high-frequency circuit 2 and the electrode of the capacitor C1 that is connected with antenna ANT via external connection terminals Po7.In dielectric layer (4), be formed with the inside GND electrode with the earth terminal GND conducting of dielectric layer (1).In dielectric layer (5), be formed with the electrode of the capacitor DCu1 that forms high-frequency circuit 3.In dielectric layer (6), be formed with circuit GLt1, GLt2, the Lt2 that forms high-frequency circuit 2 and circuit DLt1, the DLt2 that forms high-frequency circuit 3.In dielectric layer (7), be formed with circuit GLt1, GLt2, the Lt2 that forms high-frequency circuit 2 and circuit DLt1, the DLt2 that forms high-frequency circuit 3 from dielectric layer (6) continuity.In dielectric layer (8), be formed with circuit GLt1, GLt2, the Lt2 that forms high-frequency circuit 2 and circuit DLt1, the DLt2 that forms high-frequency circuit 3 from dielectric layer (7) continuity.In dielectric layer (9), be formed with the electrode of the capacitor Cc2 that forms high-frequency circuit 2.In dielectric layer (10), be formed with and form the capacitor Cc1 of high-frequency circuit 2 and the public electrode of capacitor Cc2.In dielectric layer (11), be formed with electrode, the formation capacitor GCc1 of high-frequency circuit 2 and the public electrode of capacitor GCc2 of the capacitor Cc2 that forms high-frequency circuit 2 and form the electrode of the capacitor DCc1 of high-frequency circuit 3.In dielectric layer (12), be formed with the electrode of capacitor GCc1 and the electrode of capacitor GCc2, the formation capacitor Cc1 of high-frequency circuit 2 and the public electrode of capacitor Cc2 that forms high-frequency circuit 2 and the electrode that forms the capacitor DCc2 of high-frequency circuit 3.In dielectric layer (13), be formed with the electrode of capacitor GCc2 and the electrode of capacitor Cc1 that form high-frequency circuit 2.In dielectric layer (14), be formed with and form the capacitor Cc1 of high-frequency circuit 2 and the public electrode of capacitor Cc2 and the inside GND electrode with the earth terminal GND conducting of dielectric layer (1).In dielectric layer (15), (16), be formed with through hole and connecting wiring.Between the electrode pattern of each dielectric layer, utilize through hole conducting, thereby form circuit as shown in Figure 1.
In addition, the antenna port Pa1 of switch element SW1 is connected with one end of reactance component L1 via dielectric layer (17), (16).Driving port Pw1, is connected with the external connection terminals Po8 of installed surface via dielectric layer (1) from dielectric layer (17).Control port Pc1, is connected with the external connection terminals Po9 of installed surface via dielectric layer (1) from dielectric layer (17).Control port Pc2, is connected with the external connection terminals Po10 of installed surface via dielectric layer (1) from dielectric layer (17).Control port Pc3, is connected with the external connection terminals Po11 of installed surface via dielectric layer (1) from dielectric layer (17).Switch port Ps1, is connected with external connection terminals Po2 with the external connection terminals Po1 of installed surface via dielectric layer (1) from dielectric layer (17).Switch port Ps2, is connected with the external connection terminals Po3 of installed surface via dielectric layer (1) from dielectric layer (17).Switch port Ps3, via dielectric layer (17), (16), is connected with the filter element GSMSAW of element loading surface.Switch port Ps4, via dielectric layer (17), (16), (15), is connected with the filter element DCSSAW of element loading surface.Switch port Ps5, via dielectric layer (17), (16), is connected with the filter element DCSSAW of element loading surface.Switch port Ps6, is directly connected with the inside GND electrode that is arranged at dielectric layer (14) via the through hole that is arranged at dielectric layer (14) from dielectric layer (17).If make this sky switch port Ps6 via be disposed at through hole under it directly with inner actual being connected of GND electrode, owing to can not producing unwanted parasitic component, and this through hole not with other cloth line electrode magnetic Field Coupling, therefore, can further improve isolation.
Like this, realize high-frequency switch module with single duplexer, thereby high-frequency switch module can be formed as small-sized.
Then, with reference to Fig. 6, the related high-frequency switch module of embodiments of the present invention 2 is described.
Fig. 6 is the brief block diagram that possesses the leading section of the high-frequency switch module of present embodiment, and the structure identical with said structure is attached with to identical symbol.
In this high-frequency switch module 101, the structure of GND circuit 17 is different from high-frequency switch module 1.Particularly, GND circuit 17 adopts the structure that is provided with the terminal resistance R of characteristic impedance 50 Ω between switch port Ps6 and GND electrode.
By adopting such structure, in the time utilizing semiconductor FET switch to switch connecting, even switch port Ps6 temporarily in the state of antenna port Pa1 conducting, also can make the signal that enters sky switch port Ps6 from antenna port be consumed by terminal resistance R.Therefore, can reduce the reflection on switch port Ps6, thereby suppress to leak to from antenna port Pa1 the signal of switch port Ps1～Ps5.Therefore,, even if be provided with as shown in the embodiment sky switch port, also can guarantee the isolation between antenna port and switch port.
Here, utilize the emulation of the terminal condition that has changed empty switch port Ps6, the measurement result of isolation characteristic is described.Fig. 7 is the figure that the result of emulation is described.
In emulation, to the terminal condition of unconnected disconnection, the terminal condition that GND circuit 7 is connected with empty switch port Ps6 and GND circuit 17 is compared with the terminal condition that empty switch port Ps6 is connected whatever on empty switch port Ps6.In addition, under each terminal condition, the isolation characteristic between the isolation characteristic between the isolation characteristic between antenna port Pa1 and switch port Ps3, antenna port Pa1 and switch port Ps4 and antenna port Pa1 and switch port Ps5 is measured.
Consequently, with on empty switch port Ps6 whatever compared with the terminal condition of unconnected disconnection, under the terminal condition that GND circuit 7 is connected with empty switch port Ps6 and terminal condition that GND circuit 17 is connected with empty switch port Ps6, the isolation characteristic in whichever switch port is all improved.
In addition,, in the situation that being connected with GND circuit 7, being totally reflected at antenna port from the signal of antenna port input, thereby can not being input in semiconductor FET switch.But, the in the situation that of GND circuit 17, due to via 50 Ω terminal ground connection, therefore can cause frequency characteristic that signal has because of deviation or the resistance of resistance value etc. not consumed by 50 Ω completely, thereby make isolation characteristic to improve effect less than having used the situation of GND circuit 7.
Then, with reference to Fig. 8, the related high-frequency switch module of embodiments of the present invention 3 is described.
Fig. 8 is the brief block diagram that possesses the leading section of the high-frequency switch module of present embodiment, and the structure identical with said structure is attached with to identical symbol.
In this high-frequency switch module 102, the structure of GND circuit 27 and switch element SW2 is different from high-frequency switch module 1.Particularly, the semiconductor FET switch of switch element SW2 is made as to GaAs semiconductor FET switch, makes GND circuit 27 there is the structure that is provided with the capacitor C2 of 1000pF between switch port Ps6 and GND electrode.
By capacitor C 2 is set, can under the frequency of inputted signal, reduce impedance, by making GND circuit 27 approach ground state under this frequency, can on antenna port, reflect signal.Thus, can improve the isolation characteristic between antenna port and switch port.
Then, with reference to Fig. 9, the related high-frequency switch module of embodiments of the present invention 4 is described.
Fig. 9 is the brief block diagram that possesses the leading section of the high-frequency switch module of present embodiment, and the structure identical with said structure is attached with to identical symbol.
In this high-frequency switch module 103, the structure of GND circuit 37 is different from high-frequency switch module 102.Particularly, GND circuit 37 adopts the structure that is provided with the terminal resistance R of characteristic impedance 50 Ω and the capacitor C2 of 1000pF between switch port Ps6 and GND electrode.
By capacitor C 2 is set, can under the frequency of inputted signal, reduce impedance, by making GND circuit 27 approach ground state under this frequency, can on antenna port, reflect signal.Thus, can improve the isolation characteristic between antenna port and switch port.And, in the time utilizing semiconductor FET switch to switch connecting, even switch port Ps6 temporarily in the state of antenna port Pa1 conducting, also can make the signal that enters sky switch port Ps6 from antenna port be consumed by terminal resistance R, thereby can improve isolation characteristic.Like this, in the present embodiment, utilize these two elements of capacitor C2 and terminal resistance R, can improve isolation characteristic.
Then, with reference to Figure 10, the related high-frequency switch module of embodiments of the present invention 5 is described.
Figure 10 is the brief block diagram that possesses the leading section of the high-frequency switch module of present embodiment, and the structure identical with said structure is attached with to identical symbol.
In this high-frequency switch module 104, be connected with the Ps5 conducting as other switch port as the switch port Ps6 of empty switch port.In the situation that antenna port Pa1 is connected with empty switch port Ps6, because empty switch port Ps6 is not in off-state, therefore can leaks to other switch port Ps1～Ps4 from empty switch port Ps6 by anti-stop signal, thereby can improve isolation characteristic.
In the above embodiment, show the example that uses SP6T type switch element, even but there is the high-frequency switch module of the switch port of quantity in addition, as long as being one, empty switch port quantity just can preferably implement above the present invention.
In addition, as mentioned above, by by empty switch port directly or be connected with GND electrode via impedance part, or empty switch port is connected with other switch port, can be using the semiconductor FET switch with the individual switch port of n (more than 2 integers) as can be corresponding to the high-frequency switch module of the communication system below (n-1).
Label declaration
1,101,102,103,104 high-frequency switch modules
2～6 high-frequency circuits
7,17,27,37 GND circuit
100 leading sections
ANT antenna
Pa1 antenna port
Pc1～Pc3 control port
Po1～Po11 external connection terminals
Ps1～Ps6 switch port
Pw1 drives port
R terminal resistance
SW1, SW2 switch element
Claims (7)
1. a high-frequency switch module, is characterized in that, comprising:
Switch element, this switch element comprises the antenna port that is connected with the antenna that signal of communication is received and dispatched, multiple alternatively to the FET switch switching with the switch port of selecting being connected of described antenna port and to being connected between described switch port and described antenna port;
High-frequency circuit, this high-frequency circuit is connected any one in described multiple switch port with the signal of communication treatment circuit that described signal of communication is processed; And
GND circuit, this GND circuit at least comprises the empty switch port not being connected with described high-frequency circuit in described multiple switch port, described empty switch port directly or be connected with GND electrode by the impedance part being formed by circuit element,
The ceramic multi-layer baseplate that described switch element, described high-frequency circuit and described GND circuit and alternately laminated insulator layer and cloth line electrode are formed forms as one,
Described ceramic multi-layer baseplate has described GND electrode in the substrate lamination surface different from the installed surface of described switch element, and described GND circuit makes connected switch port be connected with described GND electrode via through hole electrode.
2. high-frequency switch module as claimed in claim 1, is characterized in that,
In the time that the described FET switch pair switch port being connected with described antenna port is switched, described empty switch port is temporarily connected with described antenna port.
3. high-frequency switch module as claimed in claim 1 or 2, is characterized in that,
Described impedance part comprises that characteristic impedance is the resistance of 50 Ω.
4. high-frequency switch module as claimed in claim 1 or 2, is characterized in that,
Described FET switch is GaAs semiconductor FET switch,
Described impedance part comprises capacitor, and this capacitor's series is connected between interconnected switch port and described GND electrode.
5. high-frequency switch module as claimed in claim 1, is characterized in that,
The inside of described ceramic multi-layer baseplate comprises multiple GND electrodes, described GND circuit makes connected described empty switch port via the through hole electrode that is formed at described ceramic multi-layer baseplate inside, on the stacked direction of described insulator layer, the GND electrode directly configuring with the installed surface of the most close described switch element is connected.
6. high-frequency switch module as claimed in claim 1 or 2, is characterized in that,
Described multiple switch port is disposed at the peripheral part of an interarea of described switch element, and described empty switch port is configured to be clipped between described multiple switch port.
7. a high-frequency switch module, is characterized in that, comprising:
Switch element, this switch element comprises the antenna port that is connected with the antenna that signal of communication is received and dispatched, multiple alternatively to the FET switch switching with the switch port of selecting being connected of described antenna port and to being connected between described switch port and described antenna port;
High-frequency circuit, this high-frequency circuit is connected any one in described multiple switch port with the signal of communication treatment circuit that described signal of communication is processed, and this high-frequency circuit is more than one; And
The empty switch port not being connected with described high-frequency circuit described at least one in multiple switch port,
Among described multiple switch port, comprise described empty switch port at the obstructed oversampling circuit element of at least two interior switch port and directly connection.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008223687 | 2008-09-01 | ||
| JP2008-223687 | 2008-09-01 | ||
| PCT/JP2009/065044 WO2010024376A1 (en) | 2008-09-01 | 2009-08-28 | High-frequency switch module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102138285A CN102138285A (en) | 2011-07-27 |
| CN102138285B true CN102138285B (en) | 2014-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980134681.8A Active CN102138285B (en) | 2008-09-01 | 2009-08-28 | High-frequency switch module |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9083394B2 (en) |
| EP (1) | EP2323269B1 (en) |
| JP (1) | JP4715973B2 (en) |
| CN (1) | CN102138285B (en) |
| WO (1) | WO2010024376A1 (en) |
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| WO2012038947A1 (en) * | 2010-09-21 | 2012-03-29 | Dsp Group Ltd. | Rf switch implementation in cmos process |
| JP5524168B2 (en) * | 2011-12-06 | 2014-06-18 | リンナイ株式会社 | Touch switch device |
| JP5700170B2 (en) | 2012-02-23 | 2015-04-15 | 株式会社村田製作所 | High frequency module and high frequency component |
| CN104170266B (en) | 2012-04-05 | 2016-04-27 | 株式会社村田制作所 | Composite module |
| TWI552431B (en) * | 2012-09-04 | 2016-10-01 | 深圳市華星光電技術有限公司 | Communication apparatus equipped with switchable antenna |
| JP6020144B2 (en) * | 2012-12-26 | 2016-11-02 | アイコム株式会社 | Communication device and circuit switching method |
| JP6266210B2 (en) | 2013-01-21 | 2018-01-24 | 太陽誘電株式会社 | module |
| CN103199829B (en) * | 2013-02-28 | 2016-05-04 | 广东宽普科技股份有限公司 | A kind of device that promotes RF switch power capability |
| JP5677499B2 (en) | 2013-04-11 | 2015-02-25 | 太陽誘電株式会社 | High frequency circuit module |
| DE112013007619T5 (en) | 2013-11-22 | 2016-08-11 | Epcos Ag | RF antenna switch and method of operating the antenna switch |
| US10009000B2 (en) * | 2014-12-22 | 2018-06-26 | Intermec, Inc. | RFID reader antenna port isolation |
| JP6451605B2 (en) | 2015-11-18 | 2019-01-16 | 株式会社村田製作所 | High frequency module and communication device |
| WO2018116961A1 (en) | 2016-12-22 | 2018-06-28 | 株式会社村田製作所 | High frequency switch and communication device |
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- 2009-08-28 WO PCT/JP2009/065044 patent/WO2010024376A1/en active Application Filing
- 2009-08-28 CN CN200980134681.8A patent/CN102138285B/en active Active
- 2009-08-28 EP EP09810024.1A patent/EP2323269B1/en active Active
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| JP2004304581A (en) * | 2003-03-31 | 2004-10-28 | Sony Corp | Front end module for radio communications, radio communication terminal device, and lead frame |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2323269B1 (en) | 2019-08-14 |
| US9083394B2 (en) | 2015-07-14 |
| JPWO2010024376A1 (en) | 2012-01-26 |
| EP2323269A4 (en) | 2015-08-12 |
| WO2010024376A1 (en) | 2010-03-04 |
| US20110181342A1 (en) | 2011-07-28 |
| CN102138285A (en) | 2011-07-27 |
| EP2323269A1 (en) | 2011-05-18 |
| JP4715973B2 (en) | 2011-07-06 |
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