CN102136441B - Method for detecting chemical mechanical lapping terminal point - Google Patents
Method for detecting chemical mechanical lapping terminal point Download PDFInfo
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- CN102136441B CN102136441B CN201010103998XA CN201010103998A CN102136441B CN 102136441 B CN102136441 B CN 102136441B CN 201010103998X A CN201010103998X A CN 201010103998XA CN 201010103998 A CN201010103998 A CN 201010103998A CN 102136441 B CN102136441 B CN 102136441B
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Abstract
The invention discloses a method for detecting a chemical mechanical lapping terminal point, which is used for detecting a lapping terminal point of metal on the surface of a wafer. The method comprises the following steps of: A, irradiating a detection area on the surface of the wafer by using a monochrome light source, and receiving reflected light from the detection area, wherein a ratio of anaverage value of the intensity of the reflected light in the detection area to the intensity of incident light is taken as the area percentage of the metal on the surface; B, when an absolute value of a change value of the area percentage of the metal on the surface is more than or equal to a preset value within unit time, removing part of the metal on the surface; C, when the absolute value of the change value of the area percentage of the metal on the surface is less than a first preset value within the unit time, determining that the lapping terminal point is reached initially; and D, whenan absolute value of a change value of the maximum value of the metal on the surface is less than a preset value, determining that the lapping terminal point is reached, wherein a ratio of the maximum value of the intensity of the reflected light in a local area of the detection area to the intensity of the incident light is taken as the maximum value of the metal on the surface.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of detection method of chemical and mechanical grinding endpoint.
Background technology
Extensive use along with electronic equipment; Semi-conductive manufacturing process has obtained development at full speed, and live width is more and more littler, for the resistance capacitance that reduces the back segment interconnection structure postpones; The dielectric material that adopts low node constant is as dielectric layer, and employing copper metal is as the material of interconnection line.
Because the copper metal is difficult to etching, use mosaic technology or dual-damascene technics manufactured copper interconnection line at present usually.The manufacturing approach of copper interconnecting line is: the dielectric layer that at first forms low-k; Then, in dielectric layer, form groove; Then, plated metal copper on said groove neutralization medium layer carrying out planarization through cmp (CMP), removes the copper on the dielectric layer, thereby in groove, forms copper interconnecting line.
In addition, because copper has higher tendency to migrate in the dielectric layer, therefore for example smooth (Ta), nitrogenize smooth (TaN), titanium (Ti) or titanium nitride barrier layers such as (TiN) were deposited on earlier between metallic copper and the dielectric layer before plated metal copper usually.Because barrier layer thickness is very thin, therefore after the copper on dielectric layer surface was removed, the barrier layer on dielectric layer surface also was removed simultaneously.
Abrasive metal copper layer is mainly realized through three grinding tables in the prior art, and each grinding table is carried out a grinding step respectively.Fig. 1 to Fig. 4 shows the generalized section of each step corresponding structure of chemomechanical copper grinding process.
Generalized section as shown in Figure 1, copper metal layer 110 are layer to be ground, and this copper metal layer 110 is covered on the hosqt media layer 100 with groove 102, and fills up groove 102.Between hosqt media layer 100 and copper metal layer 110, has barrier layer 104.
Fig. 2 is the generalized section of first operation of chemical and mechanical grinding method in the prior art.Go up execution first operation at first grinding table (Platen 1); As shown in Figure 2, carry out the first step and grind, adopt bigger grinding rate (Remove Rate) that copper metal layer 110 is ground; Remove the copper metal layer 110 of the overwhelming majority beyond the groove 102, be also referred to as main the grinding.
The time of implementation of first operation is controlled by RTPC (Real Time Process Control) function; Grinding with to metallic copper with 30,000 dust thickness is an example, and the thickness residue that requires the copper metal layer 110 beyond the groove 102 after first operation finishes is about 1000～2500A.According to different metallic thickness, the time of implementation of first operation is also inequality, and when metallic copper was ground, if needing to remove thickness is the metallic copper of 28～29,000 dusts, then the time of implementation of first operation generally was set to be approximately 200 seconds in this operation.
Fig. 3 is the generalized section of second operation of chemical and mechanical grinding method in the prior art.Second operation is carried out in (Platen 2) on second grinding table, and is as shown in Figure 3, and this operation adopts less grinding rate (Remove Rate) to remove the copper metal layer 110 beyond the groove 102, and the copper metal layer that remaines in the groove 102 is 110a.After detecting the copper metal layer 110 removed fully beyond the groove 102, being grinding endpoint, finish second operation.The thickness of removing metallic copper in second operation is 1～2.5 thousand dust.
Fig. 4 is the generalized section of the 3rd operation of chemical and mechanical grinding method in the prior art.The 3rd operation is carried out in (Platen 3) on the 3rd grinding table; As shown in Figure 4; Milling time is set in advance, removes barrier layer 104 and a spot of oxide layer beyond the groove 102, reach the purpose of isolation to guarantee remaining copper metal layer 110 beyond the groove 102 all to be removed.
At present optical reflection method detection grinding endpoints that adopt more; The method of real-time detection grinding endpoint is: laser generator and transducer are installed below the polishing pad of grinder station; Laser generator gives off laser beam in real time; And laser beam invested wafer (board grinds the metallic copper on the wafer simultaneously), simultaneously, sensor in real time receives the reflection intensity data from wafer.Because metallic copper has stronger reflectivity; Hosqt media layer then reflectivity is relatively poor; Therefore can calculate the shared area percentage of lapped face metallic copper through the reflection intensity data that receives; When the area percentage of metallic copper no longer changed, then the metallic copper in the only remaining groove of lapped face then confirmed to reach grinding endpoint.
Fig. 5 surveys the sketch map of grinding endpoint for adopting the optical reflection method.As shown in Figure 5; The LASER Light Source 501 of polishing pad below is with laser beam irradiation to wafer 502 surfaces of certain width; Because the wafer 502 that is positioned on the grinding table rotates with grinding table, so the irradiated areas of laser beam on wafer 502 surfaces are a banded cambered surface 503 through the wafer center of circle.Because banded cambered surface 503 is through the wafer center of circle, its length approximates the diameter of this wafer, therefore reflects the grinding situation of whole crystal column surface with the grinding situation on these band shape cambered surface 503 surfaces.Sensor in real time receives in this band shape cambered surface the reflective light intensity data from wafer, with the mean value of this band shape cambered surface internal reflection light intensity as the reflective light intensity data.The ratio of intensity of reflected light and incident intensity then is the shared area percentage of crystal column surface metallic copper.
Below, to pass through the curve that the said method image data draws be example with as shown in Figure 6, and the method that adopts the optical reflection method to survey grinding endpoint is described.The transverse axis of this curve is a time shaft, the milling time of expression CMP, and the longitudinal axis is the content of crystal column surface metallic copper, representes with percentage.
This curve is divided into three phases, and the phase I content of 601 crystal column surface metallic coppers does not change within a certain period of time, and content is higher.This stage, the copper metal layer beyond this stage groove still had certain thickness corresponding to the main grinding stage as shown in Figure 2, and crystal column surface metallic copper area occupied percentage does not have significant change.
When the curve appearance flex point 601a first time, get into second stage 602, during second stage 602, the content of crystal column surface metallic copper is continuing decline.This stage, the copper metal layer beyond this stage groove began to be ground away corresponding to second stage as shown in Figure 3, had the subregion to begin to expose the barrier layer or the dielectric layer of copper metal layer below gradually.Because barrier layer or dielectric layer are relatively poor to reflection of light property, but therefore only just reflecting incident light of the remaining position of copper is being arranged, so crystal column surface metallic copper area occupied percentage begins to continue to descend.
Therefore, when the changing value (drop-out value) of reflective light intensity in the unit interval of sensor acquisition during more than or equal to a predetermined value, flex point 601a appears in this then corresponding curve.This unit interval and this predetermined value can grind situation and the light intensity situation is provided with according to reality.
When the curve appearance flex point 602b second time, get into the phase III 603.During the phase III 603, the content of crystal column surface metallic copper no longer changes, and content is lower.This stage is corresponding to grinding endpoint as shown in Figure 4.In this stage, remaining copper metal layer is all removed beyond the groove, and crystal column surface only remains the copper metal in the groove, and therefore, the content of metallic copper no longer changes.
Therefore, after flex point 601a occurring, when the changing value (drop-out value) of reflective light intensity in the unit interval of sensor acquisition during less than a predetermined value, flex point 602b appears in this then corresponding curve.Then judge and reach grinding endpoint this moment.
But after reaching grinding endpoint, crystal column surface is carried out laser (OM) detect discovery, the situation that there is remaining metallic copper the subregion still can occur, that is to say that in fact CMP possibly reach grinding endpoint not yet according to above method judgement.
Still there is remaining metallic copper in the position of dielectric layer surface except that groove, may causes phenomenons such as short circuit.Though this situation can the operations such as laser detection through subsequently find, doing over again of repeating can be caused the raising of scrapping risk and the increase of cost.
Summary of the invention
In view of this, the present invention provides a kind of detection method of chemical and mechanical grinding endpoint, can accurately detect the grinding endpoint of cmp.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of detection method of chemical and mechanical grinding endpoint, the grinding endpoint that is used for the crystal column surface metal detects, and this method comprises:
Steps A with first surveyed area of monochromatic source irradiation crystal column surface, receives the reverberation from this first surveyed area, with the ratio of the mean value of the reflective light intensity in this first surveyed area and the incident intensity area percentage as surface metal;
Step B, when in first unit interval, when the absolute value of the changing value of the area percentage of surface metal begins more than or equal to first predetermined value, then surface metal begins to be removed by part;
Step C, when in first unit interval, when the absolute value of the changing value of the area percentage of surface metal begins less than first predetermined value, then preliminary judge reach grinding endpoint;
After preliminary judgement reached grinding endpoint, this method also comprised step D,
Step D, with the ratio of the maximum of the reflective light intensity of second surveyed area in said first surveyed area and incident intensity maximum as surface metal;
When in first unit interval, when the absolute value of the peaked changing value of surface metal begins less than second predetermined value, then reach grinding endpoint.
Said surveyed area for through the said wafer center of circle, length is the banded cambered surface of 300mm.
Said first unit interval is between the 3s to 10s.
Said first predetermined value is between 0% to 0.5%.
Said second surveyed area be in said first surveyed area, length is the banded cambered surface of 50mm.
Said second predetermined value is between 5% to 10%.
It is thus clear that; The detection method of chemical and mechanical grinding endpoint provided by the present invention, through in the unit interval, the changing value of the area percentage of surface metal as basis for estimation judge reach grinding endpoint after, further with in the unit interval, the peaked changing value of surface metal is as basis for estimation; Both detected the tenor in the whole area of detection from macroscopic view; Detect the tenor of local area again from microcosmic, can reflect the grinding situation in the whole area of detection truly, therefore; Judge that according to the present invention in fact CMP has also reached grinding endpoint when reaching grinding endpoint.Thereby saved the time of operations such as laser detection subsequently, grinding, not only practiced thrift cost, and reduced and scrapped danger, improved product quality.
Description of drawings
Fig. 1 to Fig. 4 is the generalized section of each step corresponding structure of chemomechanical copper grinding process.
Fig. 5 surveys the sketch map of grinding endpoint for adopting the optical reflection method.
Fig. 6 surveys the data and curves that grinding endpoint is gathered for adopting the optical reflection method.
Fig. 7 is the flow chart of the detection method of chemical and mechanical grinding endpoint of the present invention.
Fig. 8 is for being example with the grinding of metallic copper, the data and curves that adopts the detection method of chemical and mechanical grinding endpoint of the present invention to gather.
Fig. 9 is the sketch map of the judgement window of judgement curvilinear motion value.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Core concept of the present invention is: after existing mean value judgement through calculating surveyed area internal reflection light intensity reaches the step of grinding endpoint; Through calculating the maximum of the reflective light intensity of unit are in the surveyed area; And compare with existing mean value, judge whether to reach grinding endpoint in the surveyed area.
Fig. 7 is the flow chart of the detection method of chemical and mechanical grinding endpoint of the present invention.Fig. 8 is for being example with the grinding of metallic copper, the data and curves that adopts the detection method of chemical and mechanical grinding endpoint of the present invention to gather.
Like Fig. 7 and shown in Figure 8, the detection method of chemical and mechanical grinding endpoint of the present invention, the grinding endpoint that is used for the crystal column surface metal detects, and this method comprises:
Wherein, first surveyed area is the banded cambered surface 501 with certain width of passing through the wafer center of circle as shown in Figure 5, because this surveyed area is through the center of circle of wafer, so the length of this surveyed area is 300mm, is the diameter of wafer.
The area percentage of surface metal not with certain a bit or the reflective light intensity in a certain zone calculate, but with the ratio of the mean value of first surveyed area, 501 internal reflection light intensity and incident intensity area ratio as surface metal.
As shown in Figure 8 to pass through the curve that the said method image data draws be example, and curve A is divided into three phases, and the phase I 801, the content of crystal column surface metallic copper does not change within a certain period of time, and content is higher.This stage, the copper metal layer beyond this stage groove still had certain thickness corresponding to the main grinding stage as shown in Figure 2, and crystal column surface metallic copper area occupied percentage does not have significant change.
When the curve appearance flex point 801a first time, get into second stage 802, during second stage 802, the content of crystal column surface metallic copper is continuing decline.This stage, the copper metal layer beyond this stage groove began to be ground away corresponding to second stage as shown in Figure 3, had the subregion to begin to expose the barrier layer or the dielectric layer of copper metal layer below gradually.Because barrier layer or dielectric layer are relatively poor to reflection of light property, but therefore only just reflecting incident light of the remaining position of copper is being arranged, so crystal column surface metallic copper area occupied percentage begins to continue to descend.
Therefore, when in first unit interval, when the absolute value of the changing value of the area percentage of surface metal begins more than or equal to first predetermined value, flex point 801a appears in this then corresponding curve.
Wherein, this first unit interval can be the arbitrary time between the 3s to 10s.This predetermined value can be between 0% to 0.5%.Shown in the window 901 that this criterion can be as shown in Figure 9; In first unit interval, the changing value of the area percentage of surface metal can be expressed as arbitrary position in curve as shown in Figure 8 and get and judge window 901; The width of this window 901 was first unit interval; Its span is between 3s to 10s, and the height of this window 901 is this first predetermined value, and its span is between 0% to 0.5%.When judging at this in span of window 901, when curve C shown in Figure 9 and this window 901 wide had intersection point, the absolute value of changing value of area percentage of then representing interior, surface metal of this first unit interval was more than or equal to this first predetermined value; If in this judges the span of window 901, when curve D shown in Figure 9 and this window 901 wide do not have intersection point, the absolute value of changing value of area percentage of then representing interior, surface metal of this first unit interval was less than this first predetermined value.
When the curve appearance flex point 802b second time, get into the phase III 803.During the phase III 803, the content of crystal column surface metallic copper no longer changes, and content is lower.This stage is corresponding to grinding endpoint as shown in Figure 4.In this stage, remaining copper metal layer is all removed beyond the groove, and crystal column surface only remains the copper metal in the groove, and therefore, the content of metallic copper no longer changes.
Therefore, after flex point 801a occurring, when the absolute value of the changing value (drop-out value) of reflective light intensity in first unit interval of sensor acquisition during less than a predetermined value, flex point 802b appears in this then corresponding curve.Then preliminary judgement reaches grinding endpoint at this moment.
With in first unit interval, the absolute value of the changing value of the area percentage of surface metal begins to judge that as preliminary the foundation that reaches grinding endpoint is because the area percentage of surface metal is that the mean value according to the reflective light intensity in the surveyed area calculates less than moment of first predetermined value.But the length of this first surveyed area is 300mm; Therefore and have certain width, when approaching and when not reaching grinding endpoint, the surface that the dielectric layer surface possibly only limit to individual point still has the remnants of metallic copper; And most areas have ground and have finished; At this moment, the reflective light intensity in this first surveyed area is averaged, the area of its individual point is less to the influence of mean value.In this case, if only judge that with the changing value of the area percentage of surface metal grinding endpoint is incorrect.
Therefore, the detection method of chemical and mechanical grinding endpoint of the present invention also comprises step 704 after preliminary judgement reaches grinding endpoint.
When in first unit interval, when the absolute value of the peaked changing value of surface metal begins less than second predetermined value, then reach grinding endpoint.
Owing to being averaged, the reflective light intensity in whole first surveyed area can not comprehensively reflect the comprehensive situation in the surveyed area; Therefore after judging grinding endpoint according to the changing value of the area percentage of surface metal, the present invention also comprises according in the unit interval, judge grinding endpoint with the peaked changing value of surface metal.
Wherein, the maximum of surface metal is maximum and the ratio of incident intensity of the reflective light intensity of the second less surveyed area in said first surveyed area.
Preferably, this unit are be in said first surveyed area, length is the banded cambered surface of 50mm.It is less that second surveyed area and first surveyed area are compared area of detection, that is, second surveyed area is the local detection zone in first surveyed area.With the basis for estimation of the maximum in this local detection zone, just in order to eliminate owing to taking the situation that mean value is ignored local maximum by force in the first bigger surveyed area interior focusing as the detection grinding endpoint.
Preferably, second predetermined value is between 5% to 10%.
Corresponding to the curve B among Fig. 8, its determination methods is similar with curve A to the peaked judgement in second surveyed area.When the absolute value of the peaked changing value of surface metal during more than or equal to second predetermined value, then still there is the phenomenon of regional area remaining copper in crystal column surface, does not then reach grinding endpoint this moment, and wafer still need continue to grind, step process such as processing again.
When the absolute value of the peaked changing value of surface metal began less than second predetermined value, remaining copper metal layer was all removed beyond the then whole surveyed area internal channel, and crystal column surface only remains the copper metal in the groove, then reached grinding endpoint this moment.
More than be the detection method that example has been described chemical and mechanical grinding endpoint of the present invention with the cmp of copper metal, but the present invention is not limited to this.Because the present invention adopts the optical reflection method to survey grinding endpoint, therefore, all is applicable to this detection method so long as have certain reflexive metal material.
The detection method of chemical and mechanical grinding endpoint of the present invention; Through in the unit interval, the changing value of the area percentage of surface metal as basis for estimation judge reach grinding endpoint after; Further with in the unit interval, the peaked changing value of surface metal is as basis for estimation, both detected the tenor in the whole area of detection from macroscopic view, detected the tenor of local area again from microcosmic; Can reflect the grinding situation in the whole area of detection truly; Therefore, judge that according to the present invention in fact CMP has also reached grinding endpoint when reaching grinding endpoint.Thereby saved the time of operations such as laser detection subsequently, grinding, not only practiced thrift cost, and reduced and scrapped danger, improved product quality.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the detection method of a chemical and mechanical grinding endpoint is used for the grinding endpoint detection of crystal column surface metal, and this method comprises:
Steps A with first surveyed area of monochromatic source irradiation crystal column surface, receives the reverberation from this first surveyed area, with the ratio of the mean value of the reflective light intensity in this first surveyed area and the incident intensity area percentage as surface metal;
Step B, when in first unit interval, when the absolute value of the changing value of the area percentage of surface metal begins more than or equal to first predetermined value, then surface metal begins to be removed by part;
Step C, when in first unit interval, when the absolute value of the changing value of the area percentage of surface metal begins less than first predetermined value, then preliminary judge reach grinding endpoint;
It is characterized in that after preliminary judgement reached grinding endpoint, this method also comprised step D,
Step D, with the ratio of the maximum of the reflective light intensity of second surveyed area in said first surveyed area and incident intensity maximum as surface metal; Second surveyed area is the local detection zone in first surveyed area;
When in first unit interval, when the absolute value of the peaked changing value of surface metal begins less than second predetermined value, then reach grinding endpoint.
2. the detection method of chemical and mechanical grinding endpoint as claimed in claim 1 is characterized in that, said first surveyed area for through the said wafer center of circle, length is the banded cambered surface of 300mm.
3. the detection method of chemical and mechanical grinding endpoint as claimed in claim 2 is characterized in that, said first unit interval is between the 3s to 10s.
4. the detection method of chemical and mechanical grinding endpoint as claimed in claim 2 is characterized in that, said first predetermined value is between 0% to 0.5%.
5. like the detection method of claim 3 or 4 described chemical and mechanical grinding endpoints, it is characterized in that, said second surveyed area be in said first surveyed area, length is the banded cambered surface of 50mm.
6. the detection method of chemical and mechanical grinding endpoint as claimed in claim 5 is characterized in that, said second predetermined value is between 5% to 10%.
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| CN103887206B (en) * | 2014-04-02 | 2017-05-31 | 中国电子科技集团公司第四十五研究所 | chemical mechanical planarization endpoint detection method and device |
| CN107309782B (en) * | 2017-05-19 | 2019-03-12 | 天津华海清科机电科技有限公司 | The detection method and detection device of torque terminal |
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| US6911662B2 (en) * | 2002-03-21 | 2005-06-28 | Samsung Electronics Co., Ltd. | Chemical-mechanical polishing apparatus and method for controlling the same |
| US7481945B2 (en) * | 2000-12-04 | 2009-01-27 | Nikon Corporation | Polishing progress monitoring method and device thereof, polishing device, semiconductor device production method, and semiconductor device |
| CN101523565A (en) * | 2006-10-06 | 2009-09-02 | 株式会社荏原制作所 | Processing endpoint detection method, grinding method and grinding device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7481945B2 (en) * | 2000-12-04 | 2009-01-27 | Nikon Corporation | Polishing progress monitoring method and device thereof, polishing device, semiconductor device production method, and semiconductor device |
| US6911662B2 (en) * | 2002-03-21 | 2005-06-28 | Samsung Electronics Co., Ltd. | Chemical-mechanical polishing apparatus and method for controlling the same |
| CN101523565A (en) * | 2006-10-06 | 2009-09-02 | 株式会社荏原制作所 | Processing endpoint detection method, grinding method and grinding device |
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |