CN102110571B - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN102110571B CN102110571B CN200910243830.6A CN200910243830A CN102110571B CN 102110571 B CN102110571 B CN 102110571B CN 200910243830 A CN200910243830 A CN 200910243830A CN 102110571 B CN102110571 B CN 102110571B
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Abstract
The invention provides a plasma processing device. The device comprises a first pole plate and a second pole plate which are oppositely arranged, wherein the first pole plate comprises a plurality of first sub-pole plates; gaps are arranged among the first sub-pole plates; the first sub-pole plates are respectively connected with a plasma excitation power supply; the second pole plate comprises a plurality of second sub-pole plates; the second sub-pole plates correspond to the first sub-pole plates one to one; gaps are arranged among the second sub-pole plates; and the shapes of the second sub-pole plates are the same as or similar to the shapes of the corresponding first sub-pole plates and the centers of the second sub-pole plates align with the centers of the first sub-pole plates. The device has the following advantages: the standing wave effects of the sub-pole plates can be reduced; and meanwhile, the problem of poorer uniformity of the airflow from the centers to the edges of the large-area pole plates can be avoided.
Description
Technical field
The present invention relates to plasma processing techniques, particularly a kind of plasma arc processing apparatus.
Background technology
Along with the development of plasma (Plasma) technology, plasma arc processing apparatus has been widely used in the manufacturing process manufacturing integrated circuit (IC) or photovoltaic (PV) product.Ecr plasma (ECRP) device, inductively coupled plasma (ICP) device and parallel plate capacitor coupled plasma (Capacitively Coupled Plasma, CCP) device are the conventional plasma arc processing apparatus of actual production process.
The principle of CCP device electric discharge is very simple, and for ECRP device and ICP device, the plasma of generation is relatively even again, so, wait until in IC industry and PV industry at present and applied widely.
Along with the development of IC and PV industry, improve constantly the requirement of output capacity and process results, this just requires that equipment supplier is when ensureing process results, constantly strengthens the size of plasma arc processing apparatus internal polar plate.But along with the increase of polar plate area, time especially higher for rf frequency, the electric discharge of CCP device there will be obvious standing wave effect, affects the crudy of plasma; In addition, it is more difficult that larger polar plate area will cause the airflow homogeneity in reaction chamber to control.These all can the uniformity of plasma have an impact, thus affect the process results of product.
Fig. 1 is a kind of conventional CCP device schematic diagram of current PV industry, as shown in the figure, reaction chamber 1 inside is generally in vacuum state, it is inner that process gas enters reaction chamber 1 by the air admission hole 5 in top crown 4, and by vacuum gauge 8 and exhaust outlet 9 by reaction chamber 1 internal control under a certain pressure, radio-frequency power supply 3 provides energy by top crown 3 to reaction chamber 1 inside, bottom crown 4 can direct ground connection 10 as the carrier of wafer 6, also other radio-frequency power supply (not shown) can be connected, in the power-on state, rf electric field is produced between top crown 3 and these two pole plates of bottom crown 4, under the effect of this rf electric field, process gas is provoked into plasma 5, thus the wafer 6 etc. being positioned over bottom crown 4 surface is processed, the material generation physical-chemical reaction on plasma and wafer 6 surface, reacted gas discharges reaction chamber 1 by exhaust outlet 6.
Above-mentioned CCP device can meet the wafer process requirement of mating with its plate dimensions, but, along with IC and PV industry marches toward the technology maturation phase by the technical development phase, the requirement of equipment output capacity is also improved constantly, the size of increasing device improves production capacity to process more large-area wafer, become the important directions of equipment improvement, so, what just need the CCP device shown in Fig. 1 is upper, bottom crown size also just constantly increases thereupon, the corresponding standing wave effect that will increase on two-plate, also will the airflow homogeneity of pole plate centerand edge be caused to be deteriorated simultaneously, these all produce bad impact by process results.
Summary of the invention
The problem that the present invention solves is the standing wave effect how avoiding increase plate dimensions to bring.
For solving the problem, the invention provides a kind of plasma arc processing apparatus, comprise: reaction chamber and the first pole plate be oppositely arranged in reaction chamber and the second pole plate, first pole plate is positioned at the top of reaction chamber, described first pole plate is connected with gas passage, for inputting process gas in reaction chamber, second pole plate is positioned at the bottom of reaction chamber, for carrying pending wafer, wherein, described first pole plate comprises multiple first sub-pole plate, between each first sub-pole plate, there is gap, each first sub-electrode described is connected with plasma excitation power supply respectively, described second pole plate comprises multiple second sub-pole plate, each second sub-pole plate and each first sub-pole plate one_to_one corresponding described, described second sub-pole plate and another plasma excitation power supply or grounding connection, realize independent excitation alternating electric field between each first sub-pole plate and the second sub-pole plate, thus the standing wave effect of described first pole plate can be reduced.
Between each second sub-pole plate, there is gap.
The shape of the first sub-pole plate that described second sub-pole plate is corresponding with it is same or similar, and center alignment.
Each second sub-pole plate described is identical with the arrangement mode of each the first sub-pole plate described.
The size of each the first sub-pole plate described is less than the size of each the second sub-pole plate.
Insulating material is filled with in gap between each first sub-pole plate described.
Described second pole plate has multiple ventilation gap, and the second pole plate is divided into multiple subregion by each ventilation gap.
Each sub regions and each the first sub-pole plate one_to_one corresponding.
The shape of the first sub-pole plate that described each sub regions is corresponding with it is same or similar, and center alignment.
The size of each the first sub-pole plate described is less than the size of each sub regions.
Technique scheme has the following advantages:
Whole first pole plate (i.e. top crown) is divided into the structure of multiple first sub-pole plate by described plasma arc processing apparatus, each first sub-pole plate is connected respectively with plasma excitation power supply, each first sub-pole plate all can independent excitation alternating electric field, be equivalent to the size by reducing the monolithic pole plate forming plasma, thus the standing wave effect of sub-pole plate can be reduced.Meanwhile, the top crown of multiple first sub-pole plate split composition has larger size, and each first sub-pole plate is connected with separate gas input channel again respectively, this avoid large-area top crown center to the poor problem of the airflow homogeneity at edge.
In addition, above-mentioned plasma arc processing apparatus also has the following advantages: by the first pole plate, the second pole plate are divided into multiple part, reduce raw-material size, thus reduce raw-material cost and processing cost.And the reduction of element size, reduces the difficulty of maintenance and the time of maintenance.
Accompanying drawing explanation
Shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawing indicates identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on purport of the present invention is shown.
Fig. 1 is a kind of conventional CCP device schematic diagram of current PV industry;
Fig. 2 is the schematic diagram of plasma arc processing apparatus in the embodiment of the present invention one;
Fig. 3 is the second pole plate schematic diagram of plasma arc processing apparatus in the embodiment of the present invention two.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; the profile of indication device structure can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication, be described below in conjunction with accompanying drawing.
Embodiment one
Fig. 2 is the schematic diagram of plasma arc processing apparatus in the present embodiment, for inventive point of the present invention is clearly described, in figure and not shown reaction chamber, vacuum extractor etc. and inventive point do not have the structure of direct relation.
Described plasma arc processing apparatus comprises: the first pole plate 10 and the second pole plate 20 be oppositely arranged in reaction chamber (not shown), reaction chamber.First pole plate 10 is positioned at the top of reaction chamber, is commonly referred to top crown, and this top crown is also gas input device, and it is connected with gas passage, for inputting process gas in reaction chamber.Second pole plate 20 is positioned at the bottom of reaction chamber, is commonly referred to bottom crown, for carrying pending wafer 70.Plasma generation and the space between the first pole plate 10 and the second pole plate 20 in the power-on state.Being provided with exhaust outlet below bottom i.e. second pole plate 20 of reaction chamber, being connected with vacuum extractor, for discharging reacted gas.
Wherein, described first pole plate 10 comprises multiple first sub-pole plate 101, has gap 102 between each first sub-pole plate 101, and each first sub-pole plate 101 described is connected with plasma excitation power supply 30 respectively.As shown in Figure 2, the first pole plate 10 in the present embodiment is made up of four the first sub-pole plates 101, and each sub-pole plate 101 is measure-alike rectangle, and the gap 102 between them presents cross, the first pole plate 10 is divided into four the first sub-pole plates 101.On the whole, described first pole plate 10 is also rectangle.
Gap 102 between each first sub-pole plate 101 is slit spatially, also can in gap 102 fill insulant, thus by the mutually isolated insulation of each the first sub-pole plate 101.Preferably, each first sub-pole plate 101 is connected with separate gas input channel respectively.
Described second pole plate 20 comprises multiple second sub-pole plate 201, each second sub-pole plate 201 and each first sub-pole plate 101 one_to_one corresponding above it.Preferably, the shape of the first sub-pole plate 101 that described second sub-pole plate 201 is corresponding with it is same or similar, and center alignment.So, between each second sub-pole plate 201, also there is gap 202, the shape in this gap 202 and position corresponding with the gap 102 of the first pole plate 101.
Such as, see Fig. 2, each second sub-pole plate 201 is also rectangle, and the center superposition of the center of this rectangle and the first sub-pole plate 101, gap 202 is also cross, the second pole plate 20 is divided into four the second sub-pole plates 201.Each second sub-pole plate 201 can place pending wafer 7.Process gas detaches reaction chamber by the surrounding of the second pole plate 20 and gap 202 after injecting from the first pole plate 101.By increasing the gap 202 of ventilation on the second pole plate 20, also just adding the passage that gas is discharged, thus improve the uniformity of wafer 7 airflow on surface be placed on the second pole plate.
Each second sub-pole plate 201 described is identical with the arrangement mode of each the first sub-pole plate 101 described.That is, each first sub-pole plate 101 or each the second sub-pole plate 201 are in the plane being parallel to wafer 7, parallel arranged, and split forms the first pole plate 10 or the second pole plate 20.
Preferably, the size of each the first sub-electrode 10 described is less than the size of each the second sub-electrode 20.In other words, in order to improve process uniformity, reduce edge effect to the impact of technique, should ensure that each piece of sub-pole plate of the second pole plate 20 is all greater than the size of each piece of sub-pole plate of the first pole plate 10, namely each first sub-pole plate 101 edge is all positioned at the inside, edge of corresponding second sub-pole plate 201.
Each second sub-pole plate 201 can be connected with another plasma excitation power supply (not shown) respectively, also can distinguish ground connection.
Above-mentioned plasma arc processing apparatus, whole first pole plate (i.e. top crown) is divided into the structure of multiple first sub-pole plate, each first sub-pole plate is connected respectively with plasma excitation power supply, each first sub-pole plate all can independent excitation alternating electric field, be equivalent to the size by reducing the monolithic pole plate forming plasma, thus the standing wave effect of sub-pole plate can be reduced.Meanwhile, the top crown of multiple first sub-pole plate split composition has larger size, and each first sub-pole plate is connected with separate gas input channel again respectively, this avoid large-area top crown center to the poor problem of the airflow homogeneity at edge.
In addition, above-mentioned plasma arc processing apparatus also has the following advantages: by the first pole plate, the second pole plate are divided into multiple part, reduce raw-material size, thus reduce raw-material cost and processing cost.And the reduction of element size, reduces the difficulty of maintenance and the time of maintenance.
In other embodiments of the present invention, described first pole plate, the second pole plate and their sub-pole plate are not limited to rectangle, can be also other shapes, adapt with wafer shape to be processed.The arrangement mode of each sub-pole plate is also not limited to parallel arranged, also can be the arrangement of nested type.
Embodiment two
The present embodiment provides another plasma arc processing apparatus, is only the structure of the second pole plate (i.e. bottom crown) with the difference of embodiment one.Fig. 3 is the second pole plate schematic diagram of plasma arc processing apparatus in the present embodiment.
As shown in Figure 3, the second pole plate 20 ' is not made up of multiple sub-pole plate, but in pole plate, arrange multiple ventilation gap 40, and the second pole plate is divided into multiple subregion 201 ' by each ventilation gap 40.Each sub regions 201 ' and each the first sub-pole plate 101 (can see Fig. 2) one_to_one corresponding.
The shape of the first sub-pole plate that described each sub regions 201 ' is corresponding with it is same or similar, and center alignment.Like this, each ventilation gap 40 shape is on the whole corresponding with the gap of the first pole plate with position.
Such as, see Fig. 3, each sub regions 201 ' is also rectangle substantially, and the center superposition of the center of this rectangle and the first sub-pole plate, has four ventilation gaps 40 between each sub regions, also be rendered as cross-shaped arrangement, the second pole plate 20 ' is divided into four sub regions 201 '.Every sub regions 201 ' can be placed pending wafer 7.After process gas injects from the first pole plate, by the surrounding of the second pole plate 20 ' with detach reaction chamber.By in the upper ventilation gap 40 increased of the second pole plate 20 ', also just add the passage that gas is discharged, thus improve the uniformity of wafer 7 airflow on surface.
Preferably, the size of each the first sub-pole plate described is less than the size of each sub regions 201 '.And other structures of plasma arc processing apparatus are all identical with embodiment one in the present embodiment, this is no longer going to repeat them.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a plasma arc processing apparatus, it is characterized in that, comprise: reaction chamber and the first pole plate be oppositely arranged in reaction chamber and the second pole plate, first pole plate is positioned at the top of reaction chamber, described first pole plate is connected with gas passage, for inputting process gas in reaction chamber, second pole plate is positioned at the bottom of reaction chamber, for carrying pending wafer, wherein, described first pole plate comprises multiple first sub-pole plate, between each first sub-pole plate, there is gap, each first sub-electrode described is connected with plasma excitation power supply respectively, described second pole plate comprises multiple second sub-pole plate, each second sub-pole plate and each first sub-pole plate one_to_one corresponding described, described second sub-pole plate and another plasma excitation power supply or grounding connection, realize independent excitation alternating electric field between each first sub-pole plate and the second sub-pole plate, thus the standing wave effect of described first pole plate can be reduced.
2. plasma arc processing apparatus as claimed in claim 1, is characterized in that having gap between each second sub-pole plate.
3. plasma arc processing apparatus as claimed in claim 2, it is characterized in that, the shape of the first sub-pole plate that described second sub-pole plate is corresponding with it is same or similar, and center alignment.
4. plasma arc processing apparatus as claimed in claim 3, it is characterized in that, each second sub-pole plate described is identical with the arrangement mode of each the first sub-pole plate described.
5. plasma arc processing apparatus as claimed in claim 3, it is characterized in that, the size of each the first sub-pole plate described is less than the size of each the second sub-pole plate.
6. the plasma arc processing apparatus as described in any one of claim 1-5, is characterized in that, is filled with insulating material in the gap between each first sub-pole plate described.
7. plasma arc processing apparatus as claimed in claim 1, it is characterized in that, described second pole plate has multiple ventilation gap, and the second pole plate is divided into multiple subregion by each ventilation gap.
8. plasma arc processing apparatus as claimed in claim 7, is characterized in that, each sub regions and each the first sub-pole plate one_to_one corresponding.
9. plasma arc processing apparatus as claimed in claim 8, it is characterized in that, the shape of the first sub-pole plate that described each sub regions is corresponding with it is same or similar, and center alignment.
10. plasma arc processing apparatus as claimed in claim 9, it is characterized in that, the size of each the first sub-pole plate described is less than the size of each sub regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910243830.6A CN102110571B (en) | 2009-12-23 | 2009-12-23 | Plasma processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910243830.6A CN102110571B (en) | 2009-12-23 | 2009-12-23 | Plasma processing device |
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| CN102110571A CN102110571A (en) | 2011-06-29 |
| CN102110571B true CN102110571B (en) | 2015-01-14 |
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| CN200910243830.6A Active CN102110571B (en) | 2009-12-23 | 2009-12-23 | Plasma processing device |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5248371A (en) * | 1992-08-13 | 1993-09-28 | General Signal Corporation | Hollow-anode glow discharge apparatus |
| WO2009133189A1 (en) * | 2008-05-02 | 2009-11-05 | Oerlikon Trading Ag, Truebbach | Plasma processing apparatus and method for the plasma processing of substrates |
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2009
- 2009-12-23 CN CN200910243830.6A patent/CN102110571B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5248371A (en) * | 1992-08-13 | 1993-09-28 | General Signal Corporation | Hollow-anode glow discharge apparatus |
| WO2009133189A1 (en) * | 2008-05-02 | 2009-11-05 | Oerlikon Trading Ag, Truebbach | Plasma processing apparatus and method for the plasma processing of substrates |
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| Publication number | Publication date |
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| CN102110571A (en) | 2011-06-29 |
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Address after: 100016 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 No. 1, Jiuxianqiao East Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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