CN102104353A - Semiconductor generating device using low-temperature waste heat - Google Patents
Semiconductor generating device using low-temperature waste heat Download PDFInfo
- Publication number
- CN102104353A CN102104353A CN2009102014690A CN200910201469A CN102104353A CN 102104353 A CN102104353 A CN 102104353A CN 2009102014690 A CN2009102014690 A CN 2009102014690A CN 200910201469 A CN200910201469 A CN 200910201469A CN 102104353 A CN102104353 A CN 102104353A
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- Prior art keywords
- heat
- waste heat
- thermoelectric conversion
- generating device
- bismuth telluride
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000002918 waste heat Substances 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 16
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 16
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 238000011084 recovery Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 210000000031 electric organ Anatomy 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 6
- 229920000642 polymer Polymers 0.000 abstract description 3
- 230000005619 thermoelectricity Effects 0.000 abstract 7
- 235000012431 wafers Nutrition 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005265 energy consumption Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000741 silica gel Substances 0.000 abstract 1
- 229910002027 silica gel Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention belongs to a low-temperature waste heat generating device, wherein the generating device composed mainly of a high efficient semiconductor thermoelectric material is used for converting the low-temperature waste heat, about 100 DEG C, into electric energy directly. The generating device comprises a thermal-arrest apparatus, a bismuth telluride-based thermoelectricity power generator and a heat dissipation cooling system, and is characterized in that: the thermoelectricity power generator employs a plurality of P/N type bismuth telluride-based thermoelectricity conversion elements with high performance and is in a rectangular slice structure, wherein the plurality of thermoelectricity conversion elements are connected in series and clamped by two ceramic wafers respectively arranged on top and bottom of the thermoelectricity conversion elements, a heat-conducting silica gel sheet is adhered ton the top ceramic wafer, the thermoelectricity conversion elements are interconnected through an aluminum electrode, the well-connected thermoelectricity conversion element array is filled with porous polymer for sealing. The semiconductor generating device of the invention has the advantage of recovering and then reusing the waste heat of small and middle size equipment with a heat source temperature about 100 DEG C, so as to reduce energy consumption.
Description
Technical field
The invention belongs to a kind of low-temperature cogeneration device, utilize mainly the Blast Furnace Top Gas Recovery Turbine Unit (TRT) formed by semi-conductor thermoelectric material efficiently that about 100 ℃ low temperature exhaust heat is directly changed into electric energy.
Background technology
In recent years, along with global economy ground high speed development to the energy particularly the demand of fossil energy increasing rapidly, and the energy crisis and the environmental problem that produce also more and more serious thereupon.Meanwhile, the heat that fossil energy produces in daily production and life has a big chunk not to be utilized but has slatterned as waste heat or used heat.If this part energy can be utilized again, just can save a large amount of energy, alleviate the existing energy and environmental crisis effectively.Semi-conductor thermoelectric material is to utilize the thermoelectric effect of material itself to realize the direct energy and material of changing between heat energy and the electric energy.Thermoelectric effect comprises three effects that are mutually related: Seebeck (Seebeck) effect, Peltier (Peltier) effect and Thomson (Thomson) effect.Wherein the thermoelectric power generation utilization is its Seebeck effect, and promptly the temperature when p, two kinds of semiconductor two ends of n does not just have electrical potential difference at the semiconductor two ends simultaneously, just has electric current to flow through after connecting an external loop, realizes thermo-electric generation.Because semi-conductor thermoelectric material has that volume is little, reliability is high, pollution-free, noiselessness and the characteristics that have the temperature difference just can generate electricity are applied in this low-temperature cogeneration device the low temperature exhaust heat that can utilize traditional generator to use again effectively.And present solar power generation has begun to adopt the generating of optically focused crystal silicon solar battery component, it utilizes condenser to assemble strong solar light irradiation monocrystalline silicon solar battery sheet generating, its generating efficiency far surpasses existing common solar light irradiation crystal silicon solar cell sheet, but because irradiation light is strong, the monocrystalline silicon solar battery sheet produces big heat, in order to prevent the overheated reduction that causes generating efficiency, need the heat on the monocrystalline silicon solar battery sheet be distributed with cold scarce device, if therefore can be used, then can increase substantially whole solar energy generating efficiency to this heat energy.In addition also can be with some the waste heat of other middle-size and small-size equipment recycled.
Summary of the invention:
The purpose of this invention is to provide near the small-sized low-temperature generation device of a kind of heat source temperature 100 ℃, utilize problem again with the waste heat that solves some middle-size and small-size equipment.The present invention designs a kind of cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of utilizing waste heat, comprise heat collector, bismuth telluride-based thermoelectric electric organ and heat radiation cooling system are formed, it is characterized in that: thermoelectric generator has adopted a plurality of high performance P/N type bismuth telluride-based thermoelectric conversion elements, be rectangular flake structure, a plurality of thermoelectric conversion elements are connected in series, respectively place a potsherd and clamping at top and bottom, stick a slice thermal conductive silicon film on the potsherd of top, connect filling porous polymeric seal in the thermoelectric conversion element matrix that connects between each thermoelectric conversion element by the aluminium electrode.It is characterized in that: heat collector is a ceramic wafer.It is characterized in that: the heat radiation cooling system is the ceramic wafer of bottom, and the ceramic wafer of bottom is an imbricated texture.Advantage of the present invention is to reclaim near the waste heat of the middle-size and small-size equipment of heat source temperature 100 ℃, and it can be utilized again, thereby reduces the consumption of the energy.
Description of drawings:
Fig. 1 is a structural representation of the present invention, Fig. 2 is that 49 generating elements are connected in series, the matrix of having formed a 7*7, among Fig. 1 the 1, the 2nd, the bismuth telluride base semiconductor generating element of P type and N type, the 3rd, the aluminium electrode of Connection Element, the 4th, the porous polymer of filling, the 5th, top ceramic wafer, the 6th, bottom ceramic wafer, the 7th, thermal conductive silicon film, 8 is generating elements among Fig. 2, the 4th, and the porous polymer of filling.
Below in conjunction with accompanying drawing and construction embodiment the present invention is made detailed operation instruction.
Embodiment:
Comprise heat collector, bismuth telluride-based thermoelectric electric organ and heat radiation cooling system composition among the figure, it is characterized in that: thermoelectric generator has adopted a plurality of high performance P/N type bismuth telluride-based thermoelectric conversion elements, be rectangular flake structure, a plurality of thermoelectric conversion elements are connected in series, respectively place a potsherd and clamping at top and bottom, stick a slice thermal conductive silicon film on the potsherd of top, connect filling porous polymeric seal in the thermoelectric conversion element matrix that connects between each thermoelectric conversion element by the aluminium electrode.It is characterized in that: heat collector is a ceramic wafer.It is characterized in that: the heat radiation cooling system is the ceramic wafer of bottom, and the ceramic wafer of bottom is an imbricated texture.After the waste heat of industrial middle-size and small-size equipment is delivered to the radiator of thermal conductive silicon film stickup, heat by the thermal conductive silicon film on the potsherd that is delivered to high performance P/N type bismuth telluride-based thermoelectric conversion element top, and produce the temperature difference up and down between the potsherd at high performance P/N type bismuth telluride-based thermoelectric conversion element, thereby high performance P/N type bismuth telluride-based thermoelectric conversion element has electric current to produce, and the ceramic wafer of high performance P/N type bismuth telluride-based thermoelectric conversion element bottom is that imbricated texture is to dispel the heat better, the ceramic wafer of keeping high performance P/N type bismuth telluride-based thermoelectric conversion element top and the bottom has the temperature difference, and continues to produce electric current output.
Claims (3)
1. cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of utilizing waste heat, comprise heat collector, bismuth telluride-based thermoelectric electric organ and heat radiation cooling system are formed, it is characterized in that: thermoelectric generator has adopted a plurality of high performance P/N type bismuth telluride-based thermoelectric conversion elements, be rectangular flake structure, a plurality of thermoelectric conversion elements are connected in series, respectively place a potsherd and clamping at top and bottom, stick a slice thermal conductive silicon film on the potsherd of top, connect filling porous polymeric seal in the thermoelectric conversion element matrix that connects between each thermoelectric conversion element by the aluminium electrode.
2. by the described a kind of cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of utilizing waste heat of claim 1, it is characterized in that: heat collector is the ceramic wafer at high performance P/N type bismuth telluride-based thermoelectric conversion element top.
3. by the described a kind of cryogenic semiconductor Blast Furnace Top Gas Recovery Turbine Unit (TRT) of utilizing waste heat of claim 1, it is characterized in that: the heat radiation cooling system is the ceramic wafer of high performance P/N type bismuth telluride-based thermoelectric conversion element bottom, and the ceramic wafer of bottom is an imbricated texture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102014690A CN102104353A (en) | 2009-12-18 | 2009-12-18 | Semiconductor generating device using low-temperature waste heat |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102014690A CN102104353A (en) | 2009-12-18 | 2009-12-18 | Semiconductor generating device using low-temperature waste heat |
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| Publication Number | Publication Date |
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| CN102104353A true CN102104353A (en) | 2011-06-22 |
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| CN2009102014690A Pending CN102104353A (en) | 2009-12-18 | 2009-12-18 | Semiconductor generating device using low-temperature waste heat |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364695A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | A cooling structure for reducing the temperature of photovoltaic power generation components |
| CN108599622A (en) * | 2018-05-09 | 2018-09-28 | 中国矿业大学 | A kind of temperature difference electricity generation device of efficient absorption solar energy |
| CN110165264A (en) * | 2019-06-14 | 2019-08-23 | 东华大学 | A kind of phosphoric acid fuel cell and two-stage semiconductors coupling power generator |
| CN112403414A (en) * | 2020-11-16 | 2021-02-26 | 徐州亚兴医疗科技有限公司 | Micro-channel continuous catalytic device and working method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040177877A1 (en) * | 2003-03-10 | 2004-09-16 | Enhanced Energy Systems, Inc. | Geometrically optimized thermoelectric module |
| JP2009077551A (en) * | 2007-09-21 | 2009-04-09 | Toshiba Plant Systems & Services Corp | Temperature difference power generation system |
| CN201584931U (en) * | 2009-12-18 | 2010-09-15 | 上海超日太阳能科技股份有限公司 | Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power |
-
2009
- 2009-12-18 CN CN2009102014690A patent/CN102104353A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040177877A1 (en) * | 2003-03-10 | 2004-09-16 | Enhanced Energy Systems, Inc. | Geometrically optimized thermoelectric module |
| JP2009077551A (en) * | 2007-09-21 | 2009-04-09 | Toshiba Plant Systems & Services Corp | Temperature difference power generation system |
| CN201584931U (en) * | 2009-12-18 | 2010-09-15 | 上海超日太阳能科技股份有限公司 | Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power |
Non-Patent Citations (1)
| Title |
|---|
| 褚泽: "《废热半导体温差发电技术的研究与开发》", 15 June 2009 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364695A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | A cooling structure for reducing the temperature of photovoltaic power generation components |
| CN108599622A (en) * | 2018-05-09 | 2018-09-28 | 中国矿业大学 | A kind of temperature difference electricity generation device of efficient absorption solar energy |
| CN108599622B (en) * | 2018-05-09 | 2020-03-31 | 中国矿业大学 | A thermoelectric power generation device that absorbs solar energy |
| CN110165264A (en) * | 2019-06-14 | 2019-08-23 | 东华大学 | A kind of phosphoric acid fuel cell and two-stage semiconductors coupling power generator |
| CN112403414A (en) * | 2020-11-16 | 2021-02-26 | 徐州亚兴医疗科技有限公司 | Micro-channel continuous catalytic device and working method thereof |
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Application publication date: 20110622 |