[go: up one dir, main page]

CN102097420B - 发光二极管及其制造方法 - Google Patents

发光二极管及其制造方法 Download PDF

Info

Publication number
CN102097420B
CN102097420B CN200910311166.4A CN200910311166A CN102097420B CN 102097420 B CN102097420 B CN 102097420B CN 200910311166 A CN200910311166 A CN 200910311166A CN 102097420 B CN102097420 B CN 102097420B
Authority
CN
China
Prior art keywords
emitting diode
diode chip
light emitting
light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200910311166.4A
Other languages
English (en)
Other versions
CN102097420A (zh
Inventor
赖志成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN200910311166.4A priority Critical patent/CN102097420B/zh
Priority to US12/894,155 priority patent/US20110140137A1/en
Publication of CN102097420A publication Critical patent/CN102097420A/zh
Application granted granted Critical
Publication of CN102097420B publication Critical patent/CN102097420B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光二极管，包括一导热基板及设于导热基板上的至少一红光发光二极管芯片、至少一绿光发光二极管芯片与至少一蓝光发光二极管芯片，其中该红光、绿光及蓝光发光二极管芯片均包括以蓝宝石为基底依次生长形成的一p型氮化镓层、一发光层及一n型氮化镓层，该红光、绿光及蓝光发光二极管芯片的p型氮化镓层与导热基板相粘合，该绿光与蓝光发光二极管芯片的发光层中参杂有铟使该绿光与蓝光发光二极管芯片分别发绿光与蓝光，该红光发光二极管芯片的发光层中参杂有铕使该红光发光二极管芯片发红光。本发明还公开一种该发光二极管的制造方法。

Description

发光二极管及其制造方法
技术领域
本发明涉及一种发光元件。特别是关于一种发光二极管及该发光二极管的制造方法。
背景技术
目前，绿光发光二极管芯片与蓝光发光二极管芯片通常是以蓝宝石(sapphire)为基底生长氮化镓(GaN)所形成，而红光发光二极管芯片通常是以砷化镓(GaAs)为基底来生长磷砷化镓(GaAsP)所形成。当采用红光(R)、绿光(G)、蓝光(B)这三种颜色的发光二极管芯片进行混光的时候，于高功率大电流时，芯片会产生大量的热，导致三种颜色的发光二极管芯片所发出R、G、B颜色会产生波长位移的现象，使得混光难度提高。另外，由于生长时所采用的基底不同，使得芯片的热膨胀系数不同，最后将三种颜色的发光二极管芯片安装于一导热基板上组成一发光二极管时，会导致该发光二极管可靠度不佳。
发明内容
有鉴于此，有必要提供一种具高可靠度且混光精确的发光二极管，并提供一种该发光二极管的制造方法。
一种发光二极管，包括一导热基板及设于该导热基板上的至少一红光发光二极管芯片、至少一绿光发光二极管芯片与至少一蓝光发光二极管芯片，其中该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片均包括一p型氮化镓层、一n型氮化镓层及位于p型氮化镓层与n型氮化镓层之间的一发光层，该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片中的每一发光二极管芯片的p型氮化镓层、发光层及n型氮化镓层均以蓝宝石为基底依次生长形成，该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片的p型氮化镓层与导热基板相粘合，该绿光发光二极管芯片与蓝光发光二极管芯片的发光层中掺杂有铟使该绿光发光二极管芯片与蓝光发光二极管芯片分别发绿光与蓝光，该红光发光二极管芯片的发光层中掺杂有铕使该红光发光二极管芯片发红光。
一种发光二极管的制造方法，包括如下步骤：制得至少一红光发光二极管芯片，包括以蓝宝石为一基底，在该蓝宝石基底上依次生长一n型氮化镓层、一发光层及一p型氮化镓层，并通过向该发光层中掺杂适量的铕来使该红光发光二极管芯片发红光；制得至少一绿光发光二极管芯片，包括以蓝宝石为一基底，在该蓝宝石基底上依次生长一n型氮化镓层、一发光层及一p型氮化镓层，并通过向该发光层中掺杂适量的铟来使该绿光发光二极管芯片发绿光；制得至少一蓝光发光二极管芯片，包括以蓝宝石为一基底，在该蓝宝石基底上依次生长一n型氮化镓层、一发光层及一p型氮化镓层，并通过向该发光层中掺杂适量的铟来使该蓝光发光二极管芯片发蓝光；提供一导热基板，将该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片倒置后使各发光二极管芯片的p型氮化镓层黏合于该导热基板上；及剥离该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片的蓝宝石基底。
与现有技术相比，发光二极管中，红光、绿光及蓝光发光二极管芯片均是以蓝宝石为基底生长氮化镓所形成，由于三种发光二极管芯片的制造工艺一致，使得该红光、绿光及蓝光发光二极管芯片的特征非常接近，从而该发光二极管的RGB混光更为精确且具更佳的可靠度。
附图说明
下面参照附图，结合实施例对本发明作进一步描述。
图1是本发明发光二极管一较佳实施例的结构示意图。
图2是图1中所示发光二极管中各发光二极管芯片安装于导热基板之前的结构示意图。
主要元件符号说明
发光二极管         100
导热基板           10
红光发光二极管芯片 20
基底               21、31、41
n型氮化镓层        22、32、42
发光层             23、33、43
p型氮化镓层        24、34、44
绿光发光二极管芯片 30
蓝光发光二极管芯片 40
透明导电层         50
电极               60
具体实施方式
如图1所示为本发明发光二极管100的一较佳实施例，该发光二极管100包括一导热基板10及设有该导热基板10上的一红光发光二极管芯片20、一绿光发光二极管芯片30及一蓝光发光二极管芯片40。
该导热基板10具有较佳的导热性能，可由高热导材料如铜、铝、镍、碳纳米管、硅或钻石等制成。
如图2所示，该红光发光二极管芯片20是以蓝宝石为一基底21，通过在该蓝宝石基底21上依次生长一n型氮化镓(n-GaN)层22、一发光层23及一p型氮化镓(n-GaN)层24所形成，其中在制造该红光发光二极管芯片20的过程中，通过向该发光层23中掺杂适量的铕(Eu)来控制其能隙，使得该红光发光二极管芯片20发红光。
该绿光发光二极管芯片30同样以蓝宝石为一基底31，通过在该蓝宝石基底31上依次生长一n型氮化镓层32、一发光层33及一p型氮化镓层34所形成，其中在制造该绿光发光二极管芯片30的过程中，通过向该发光层33中掺杂适量的铟(In)来控制其能隙，使得该绿光发光二极管芯片30发绿光。
该蓝光发光二极管芯片40还是以蓝宝石为一基底41，通过在该蓝宝石基底41上依次生长一n型氮化镓层42、一发光层43及一p型氮化镓层44所形成，其中在制造该蓝光发光二极管芯片40的过程中，通过向该发光层43中掺杂适量的铟(In)来控制其能隙，使得该蓝光发光二极管芯片40发蓝光。
该红光发光二极管芯片20安放于导热基板10上的方法为：将红光发光二极管芯片20倒置，采用基板转换技术例如电镀或粘合(Bonding)将其p型氮化镓层24粘接至导热基板10上，然后再以激光剥离技术(laser lift-off)来剥离n型氮化镓层22上的蓝宝石基底21，再在n型氮化镓层22上设置一透明导电层50(Transparent Conductive Layer,TCL)，并于该透明导电层50上设置一电极60。同样的安放方法适用于绿光发光二极管芯片30及蓝光发光二极管芯片40。
该发光二极管100中，该红光、绿光及蓝光发光二极管芯片20、30、40可以是各自以蓝宝石为基底分开生长形成，也可以由同一蓝宝石为基底生长形成。若以同一蓝宝石为基底生长形成，则可同时将该红光、绿光及蓝光发光二极管芯片20、30、40安装于导热基板10上，并一次性去除蓝宝石基底，以节省制造时间。另外，该红光、绿光及蓝光发光二极管芯片20、30、40的数目及排列形式可以依照光学设计要求而定。
该发光二极管100中，该红光、绿光及蓝光发光二极管芯片20、30、40均是以蓝宝石为基底生长氮化镓所形成，由于三种发光二极管芯片的制造工艺一致，使得该红光、绿光及蓝光发光二极管芯片20、30、40的特征非常接近，从而该发光二极管100的RGB混光更为精确且具更佳的可靠度。

Claims (7)

1.一种发光二极管，包括一导热基板及设于该导热基板上的至少一红光发光二极管芯片、至少一绿光发光二极管芯片与至少一蓝光发光二极管芯片，其特征在于：该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片均包括一p型氮化镓层、一n型氮化镓层及位于p型氮化镓层与n型氮化镓层之间的一发光层，该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片中的每一发光二极管芯片的p型氮化镓层、发光层及n型氮化镓层均以蓝宝石为基底依次生长形成，该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片的p型氮化镓层与导热基板相粘合，该绿光发光二极管芯片与蓝光发光二极管芯片的发光层中掺杂有铟使该绿光发光二极管芯片与蓝光发光二极管芯片分别发绿光与蓝光，该红光发光二极管芯片的发光层中掺杂有铕使该红光发光二极管芯片发红光。
2.如权利要求1所述的发光二极管，其特征在于：该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片中的每一发光二极管芯片的n型氮化镓层上设置有一透明导电层，该透明导电层上设置有一电极。
3.如权利要求1所述的发光二极管，其特征在于：该导热基板由铜、铝、镍、碳纳米管、硅或钻石制成。
4.一种发光二极管的制造方法，包括如下步骤：
制得至少一红光发光二极管芯片，包括以蓝宝石为一基底，在该蓝宝石基底上依次生长一n型氮化镓层、一发光层及一p型氮化镓层，并通过向该发光层中掺杂适量的铕来使该红光发光二极管芯片发红光；
制得至少一绿光发光二极管芯片，包括以蓝宝石为一基底，在该蓝宝石基底上依次生长一n型氮化镓层、一发光层及一p型氮化镓层，并通过向该发光层中掺杂适量的铟来使该绿光发光二极管芯片发绿光；
制得至少一蓝光发光二极管芯片，包括以蓝宝石为一基底，在该蓝宝石基底上依次生长一n型氮化镓层、一发光层及一p型氮化镓层，并通过向该发光层中掺杂适量的铟来使该蓝光发光二极管芯片发蓝光；
提供一导热基板，将该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片倒置后使各发光二极管芯片的p型氮化镓层黏合于该导热基板上；及
剥离该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片的蓝宝石基底。
5.如权利要求4所述的发光二极管的制造方法，其特征在于：还包括在该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片的n型氮化镓层上设置透明导电层以及在该透明导电层上设置电极。
6.如权利要求4所述的发光二极管的制造方法，其特征在于：该红光发光二极管芯片、绿光发光二极管芯片及蓝光发光二极管芯片以同一蓝宝石为基底生长形成。
7.如权利要求4所述的发光二极管的制造方法，其特征在于：该导热基板由铜、铝、镍、碳纳米管、硅或钻石制成。
CN200910311166.4A 2009-12-10 2009-12-10 发光二极管及其制造方法 Expired - Fee Related CN102097420B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200910311166.4A CN102097420B (zh) 2009-12-10 2009-12-10 发光二极管及其制造方法
US12/894,155 US20110140137A1 (en) 2009-12-10 2010-09-30 Led device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200910311166.4A CN102097420B (zh) 2009-12-10 2009-12-10 发光二极管及其制造方法

Publications (2)

Publication Number Publication Date
CN102097420A CN102097420A (zh) 2011-06-15
CN102097420B true CN102097420B (zh) 2014-08-20

Family

ID=44130419

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910311166.4A Expired - Fee Related CN102097420B (zh) 2009-12-10 2009-12-10 发光二极管及其制造方法

Country Status (2)

Country Link
US (1) US20110140137A1 (zh)
CN (1) CN102097420B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040081704A1 (en) 1998-02-13 2004-04-29 Centerpulse Biologics Inc. Implantable putty material
US20020114795A1 (en) 2000-12-22 2002-08-22 Thorne Kevin J. Composition and process for bone growth and repair
US7718616B2 (en) 2006-12-21 2010-05-18 Zimmer Orthobiologics, Inc. Bone growth particles and osteoinductive composition thereof
WO2012068135A1 (en) 2010-11-15 2012-05-24 Zimmer Orthobiologics, Inc. Bone void fillers
WO2019147738A1 (en) * 2018-01-23 2019-08-01 Light Share, LLC Full-color monolithic micro-led pixels
CN114047143A (zh) * 2021-09-28 2022-02-15 南京邮电大学 一种基于GaN发光二极管的手持式液体浓度传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1218996A (zh) * 1997-11-27 1999-06-09 陈兴 多颜色发光二极体
US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
CN101030613A (zh) * 2006-03-03 2007-09-05 广镓光电股份有限公司 覆晶式发光二极管封装结构及其封装方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US20070252161A1 (en) * 2006-03-31 2007-11-01 3M Innovative Properties Company Led mounting structures
US20080121902A1 (en) * 2006-09-07 2008-05-29 Gelcore Llc Small footprint high power light emitting package with plurality of light emitting diode chips
TWI340441B (en) * 2007-07-20 2011-04-11 Kuanchun Chen Semiconductor device and method for manufacturing the same
US8067782B2 (en) * 2008-04-08 2011-11-29 Advanced Optoelectric Technology, Inc. LED package and light source device using same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925897A (en) * 1997-02-14 1999-07-20 Oberman; David B. Optoelectronic semiconductor diodes and devices comprising same
CN1218996A (zh) * 1997-11-27 1999-06-09 陈兴 多颜色发光二极体
CN101030613A (zh) * 2006-03-03 2007-09-05 广镓光电股份有限公司 覆晶式发光二极管封装结构及其封装方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J. Sawahata, et al..TEM observation of Eu-doped GaN and fabrication of n-GaN/Eu:GaN/p-GaN structure.《Optical Materials》.2006,第28卷(第6-7期),759.
TEM observation of Eu-doped GaN and fabrication of n-GaN/Eu:GaN/p-GaN structure;J. Sawahata, et al.;《Optical Materials》;20060531;第28卷(第6-7期);759 *

Also Published As

Publication number Publication date
CN102097420A (zh) 2011-06-15
US20110140137A1 (en) 2011-06-16

Similar Documents

Publication Publication Date Title
CN102097420B (zh) 发光二极管及其制造方法
JP4852755B2 (ja) 化合物半導体素子の製造方法
JP2004214592A (ja) 混色発光ダイオード
CN101257076B (zh) 发光二极管的制造方法
CN102097553A (zh) 一种基于蓝宝石衬底的单芯片白光发光二极管
CN103151447B (zh) 一种双面发光二极管结构及其制作方法
CN106711291A (zh) 一种led垂直芯片结构及其制作方法
Zou et al. Vertical LEDs on rigid and flexible substrates using GaN-on-Si epilayers and Au-free bonding
CN105024004A (zh) 一种具备散热特性的高光效垂直led结构芯片及其制作方法
CN104037317B (zh) 一种使用陶瓷散热的高功率led灯具
CN102800800A (zh) 发光二极管器件及其制作方法
CN102214746B (zh) 一种氮化镓基功率型led芯片制作方法
CN110957409B (zh) 发光二极管外延片、发光二极管模块及其制作方法
CN102544266B (zh) 一种高光效白光led倒装芯片的制作方法
US10211377B2 (en) Method for manufacturing light-emitting diode package
TWI492363B (zh) 發光二極體及其製造方法
CN115621377A (zh) 微型led芯片的转移方法、显示模组和显示装置
CN201887046U (zh) 一种基于蓝宝石衬底的单芯片白光发光二极管
CN105047778B (zh) 一种薄膜氮化镓基发光二极管的制备方法
CN215527747U (zh) 一种生长在荧光材料与蓝宝石复合衬底上的led芯片
CN102544295B (zh) 一种高光效白光led倒装芯片
TWI404230B (zh) Light emitting diodes with multi-layer stacking structure
TWI590487B (zh) Thin-film light-emitting diode manufacturing method and film-type light-emitting Diode
CN109244195B (zh) 一种白光led芯片的制作方法
CN107017274B (zh) 一种led显示组件及其制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140820

Termination date: 20161210