CN102097303B - Photolithographic process for thick metal - Google Patents
Photolithographic process for thick metal Download PDFInfo
- Publication number
- CN102097303B CN102097303B CN2010105894233A CN201010589423A CN102097303B CN 102097303 B CN102097303 B CN 102097303B CN 2010105894233 A CN2010105894233 A CN 2010105894233A CN 201010589423 A CN201010589423 A CN 201010589423A CN 102097303 B CN102097303 B CN 102097303B
- Authority
- CN
- China
- Prior art keywords
- metal
- photoresist
- metal level
- metal layer
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002184 metal Substances 0.000 title claims abstract description 127
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000007769 metal material Substances 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims description 21
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910018594 Si-Cu Inorganic materials 0.000 claims description 3
- 229910008465 Si—Cu Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to a photolithographic process for a thick metal. The photolithographic process comprises the following steps of: a, uniformly depositing a metal material on a substrate for many times till the thickness of a metal layer formed on the substrate is 3.9 to 4.1 microns; b, coating photoresist on the metal layer, etching a plurality of mark windows on the photoresist, and exposing the metal layer at the bottom of the mark windows; c, performing metallic corrosion on the metal layer at the bottom of the mark windows, and exposing alignment marks shaded by the metal layer; d, removing the photoresist from the metal layer; e, recoating the photoresist on the metal layer, wherein the photoresist is coated on the metal layer where the alignment marks are exposed; and f, selectively masking and etching the photoresist, performing photolithography on the metal layer by using the exposed alignment marks as alignment coordinates, and obtaining required metal graphs on the metal layer. The photolithographic process can reduce the surface roughness and reduce the interference of surface grains to alignment signals, and has high alignment precision, safety and reliability.
Description
Technical field
The present invention relates to a kind of photoetching process, especially a kind of photoetching process that is used for thick metal specifically is exactly to be used for technology that the thick metal of 4 μ m is carried out photoetching, belongs to the technical field that integrated circuit is made.
Background technology
In power integrated circuit; In order to guarantee that device can pass through big electric current, the metal layer thickness of the circuit often metal bed thickness than conventional cmos circuit is doubly a lot, and general AL-SI-Cu alloy thickness is 4um; The metal grain that the metal deposit of this thickness forms is bigger; The metal surface roughness sharply increases, and just in time contraposition has produced great influence to these surfaces characteristic to metal lithographic, and conventional contraposition mode is difficult to realize thick metal lithographic contraposition.
Conventional is to adopt the NIKON mask aligner to adopt FIA (Field Image Alignment) contraposition mode or the manually inadequate contraposition of mode of contraposition to method for position; Aligning accuracy is difficult to control like this, and the circuit of having relatively high expectations for alignment can't satisfy technological requirement at all.The FIA contraposition be the NIKON mask aligner specially to the contraposition mode of shaggy rete design, but when metal surface crystal grain more than or equal to label size the time FIA contraposition mode also can't realize accurate contraposition.
The processing step of common metal photoetching is detailed as follows:
The metal deposit: once accomplish the deposit of 4um metal, as shown in Figure 1;
Metal lithographic: adopt conventional contraposition mode, realize inadequate contraposition, the alignment error is big (one edition greater than 0.3um); Metal etch and removing photoresist: because crystal grain is bigger, metal etch is difficulty, can occur residually in a large number, possibly cause element leakage.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art, a kind of photoetching process that is used for thick metal is provided, it can reduce surface roughness, reduces the interference of surface microstructure to the contraposition signal, and aligning accuracy is high, and is safe and reliable.
According to technical scheme provided by the invention, the said photoetching process that is used for thick metal comprises the steps:
A, on substrate even depositing metal material repeatedly, making and on substrate, forming metal layer thickness is 3.9 μ m～4.1 μ m; B, on above-mentioned metal level, be coated with photoresist, optionally shelter and the said photoresist of etching, on said photoresist, etch a plurality of mark windows, expose the metal level of mark window bottom; C, the metal level of mark window bottom is carried out corrosion of metals, remove the corresponding metal level in mark window bottom, expose the alignment mark that is blocked by metal level; Photoresist on d, the removal metal level; E, on above-mentioned metal level, be coated with photoresist once more, said photoresist is coated and is exposed on the outer metal level of alignment mark; F, optionally shelter and the said photoresist of etching, utilize the above-mentioned alignment mark that exposes, metal level is carried out photoetching, on metal level, obtain required metallic pattern as the contraposition coordinate.
Said substrate comprises silicon.Said metal material is the alloy of Al-Si-Cu.Among the said step a, metal material evenly is deposited on the substrate through 3 times.Said metal material passes through the PVD sputtering deposit on substrate.
The thickness of photoresist is 8 μ m in said step b and the steps d.Among the said step b, on metal level, obtain 5 mark windows.
Advantage of the present invention: form big crystal grain for fear of deposited metal on substrate, metal material divides and evenly is deposited on for 3 times on the substrate, through optionally sheltering and the etching photoresist; On metal level, form a plurality of mark windows, behind the metal level of corrosion mark window bottom, can expose the alignment mark that is blocked by metal level; As the contraposition coordinate, can realize the accurate contraposition of metal lithographic through said alignment mark to the required figure of etching on the metal level as contraposition; Improved alignment precision; Reduce the size of crystal grain after the metal deposit, made the metal surface roughness reduce, safe and reliable.
Description of drawings
Fig. 1 is for having the structural representation after the deposited metal on the substrate now.
Fig. 2 is the structural representation after the deposited metal on the substrate of the present invention.
Fig. 3-1～Fig. 3-3 is the concrete processing step sketch map of photoetching process of the present invention, wherein:
Fig. 3-1 is for obtaining the structural representation behind the mark window;
Fig. 3-2 is the structural representation after the respective metal layers of etching mark window bottom;
Fig. 3-3 is for obtaining the structural representation behind the required image after the metal level photoetching.
The structural representation that Fig. 4 is blocked by metal level for alignment mark.
Fig. 5 is for exposing the structural representation behind the alignment mark behind the corroding metal layer.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1～shown in Figure 5: the present invention includes substrate 1, metal level 2, alignment mark 3, mark window 4, metallic pattern 5 and photoresist 6.
Big for solving metal current layer crystal grain, metal etch is difficulty, occurs residually in a large number, possibly cause the situation of element leakage, and thick metal lithographic technology of the present invention comprises the steps:
A, on substrate 1 even depositing metal material repeatedly, make the thickness that on substrate 1, forms metal level 2 be 3.9 μ m～4.1 μ m, as shown in Figure 2;
Said substrate 1 comprises silicon, and the thickness of said metal level 2 is generally 4 μ m; Said metal material is the alloy of the Al-Si-Cu of routine; Said metal material is deposited on substrate 1 top through PVD (Physical Vapor Deposition) sputtering method; For avoiding forming big crystal grain, whole deposition process is divided into three completion, and whole deposition process is all at vacuum state, and substrate 1 loses atmosphere; After three deposits in 2 fens of said metal level, the cross-section structure of metal level 2 is obviously different with the structure of the metal level 2 of routine;
B, on above-mentioned metal level 2 coating photoresist 6, optionally shelter and the said photoresist 6 of etching, on said photoresist 6, etch a plurality of mark windows 4, expose the metal level 2 of mark window 4 bottoms, shown in Fig. 3-1;
The thickness of said photoresist 6 is 8 μ m, and mark window 4 is five in the present embodiment; Photoresist 6 is as the barrier bed of metal level 2 etchings;
C, the metal level 2 of mark window 4 bottoms is carried out corrosion of metals, remove the corresponding metal level 2 in mark window 4 bottoms, expose the alignment mark 3 that is blocked by metal level 2, shown in Fig. 3-2;
Because mark window 4 places do not have photoresist 6 as protection, can carry out photoetching to the metal level 2 of mark window 4 bottoms, remove the metal level 2 of mark window 4 bottoms; Because blocked the alignment mark 3 of preceding one deck after metal level 2 deposits, follow-up metal level 2 etchings and contraposition all can not realize accurate location; Behind etching sheet metal 2, expose the alignment mark 3 that is blocked by metal level 2, follow-up contraposition can utilize the alignment mark 3 that exposes as the contraposition coordinate, realizes accurate contraposition;
E, on above-mentioned metal level 2, be coated with photoresist 6 once more, said photoresist 6 is coated and is exposed on the outer metal level 2 of alignment mark 3, is not coated with photoresist 6 on the alignment mark 3, and the alignment mark 3 that exposes can be realized accurate contraposition as the contraposition coordinate of follow-up contraposition; The thickness of photoresist 6 is 8 μ m;
F, optionally shelter and the said photoresist 6 of etching, utilize the above-mentioned alignment mark that exposes 3, metal level 2 is carried out photoetching, on metal level 2, obtain required metallic pattern 5, shown in Fig. 3-3 as the contraposition coordinate; Metal level 2 is carried out photoetching through reticle,, can not cause the electric leakage of device simultaneously because the contraposition effect of alignment mark 3 can accurately realize required metal image 5 on metal level 2.
Like Fig. 4 and shown in Figure 5: the thickness of said metal level 2 reaches 4 μ m; Become thick metal, said metal level 2 has blocked alignment mark 3, because the difference of metal level 2 deposition processs; Guarantee the fail safe of subsequent etching metallic pattern 5 and device, need accurately locate metal level 2 etchings.After Fig. 5 representes the metal level 2 of etching mark window 4 bottoms, expose the structural representation behind the alignment mark 3 that is blocked by metal level 2; Alignment mark 3 clear-cuts when utilizing the required metallic pattern 5 of reticle etching on metal level 2, can be realized the accurate contraposition of thick metal lithographic, and alignment precision reaches in the 0.15 μ m.
The present invention forms big crystal grain for fear of deposited metal on substrate 12, and metal material divides and evenly is deposited on the substrate 1 for 3 times, has reduced the roughness on metal level 2 surfaces; Through optionally sheltering and etching photoresist 6, on metal level 2, form a plurality of mark windows 4, behind the metal level 2 of corrosion mark window 4 bottoms; Can expose the alignment mark 3 that is blocked by metal level 2, through said alignment mark 2 as the contraposition coordinate, can be to the required figure of etching on the metal level 25 as contraposition; Realize the accurate contraposition of metal lithographic, improved alignment precision, reduced the size of crystal grain after the metal deposit; Make the metal surface roughness reduce, safe and reliable.
Claims (6)
1. a photoetching process that is used for thick metal is characterized in that, the photoetching process of said thick metal comprises the steps:
(a), on substrate even depositing metal material repeatedly, making and on substrate, forming metal layer thickness is 3.9 μ m ~ 4.1 μ m;
(b), on above-mentioned metal level, be coated with photoresist, optionally shelter and the said photoresist of etching, on said photoresist, etch a plurality of mark windows, expose the metal level of mark window bottom;
(c), the metal level of mark window bottom is carried out corrosion of metals, remove the corresponding metal level in mark window bottom, expose the alignment mark that is blocked by metal level;
(d), the photoresist on the removal metal level;
(e), on above-mentioned metal level, be coated with photoresist once more, said photoresist is coated and is exposed on the outer metal level of alignment mark;
(f), optionally shelter and the said photoresist of etching, utilize the above-mentioned alignment mark that exposes, metal level is carried out photoetching, on metal level, obtain required metallic pattern as the contraposition coordinate;
In the said step (a), metal material evenly is deposited on the substrate through 3 times.
2. the photoetching process that is used for thick metal according to claim 1 is characterized in that: said substrate comprises silicon.
3. the photoetching process that is used for thick metal according to claim 1 is characterized in that: said metal material is the alloy of Al-Si-Cu.
4. the photoetching process that is used for thick metal according to claim 1 is characterized in that: said metal material passes through the PVD sputtering deposit on substrate.
5. the photoetching process that is used for thick metal according to claim 1 is characterized in that: the thickness of photoresist is 8 μ m in said step (b) and the step (d).
6. the photoetching process that is used for thick metal according to claim 1 is characterized in that: in the said step (b), on metal level, obtain 5 mark windows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105894233A CN102097303B (en) | 2010-12-15 | 2010-12-15 | Photolithographic process for thick metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105894233A CN102097303B (en) | 2010-12-15 | 2010-12-15 | Photolithographic process for thick metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102097303A CN102097303A (en) | 2011-06-15 |
| CN102097303B true CN102097303B (en) | 2012-06-20 |
Family
ID=44130331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105894233A Active CN102097303B (en) | 2010-12-15 | 2010-12-15 | Photolithographic process for thick metal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102097303B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426811B (en) * | 2012-05-15 | 2016-02-17 | 无锡华润上华科技有限公司 | Method, semi-conductor device manufacturing method and semiconductor device |
| CN103681242B (en) * | 2013-12-23 | 2017-01-18 | 无锡中微晶园电子有限公司 | Silicon substrate thick metal etching pretreatment process |
| CN112884828B (en) * | 2019-11-29 | 2023-10-27 | 上海先进半导体制造有限公司 | Method, system, electronic device and storage medium for monitoring position of shielding element |
| CN115995415A (en) * | 2021-10-18 | 2023-04-21 | 天津津航技术物理研究所 | Alignment method and preparation method of mosaic chip structure/filter |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050333B2 (en) * | 1978-12-26 | 1985-11-08 | 富士通株式会社 | Method for manufacturing an X-ray exposure mask |
| JPS63140533A (en) * | 1986-12-01 | 1988-06-13 | Mitsubishi Electric Corp | Forming method for resist pattern method |
| US6020249A (en) * | 1997-07-10 | 2000-02-01 | Taiwan Semiconductor Manufacturing Company | Method for photo alignment after CMP planarization |
| WO1999008314A1 (en) * | 1997-08-08 | 1999-02-18 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of fabrication thereof |
| JPH11354415A (en) * | 1998-06-10 | 1999-12-24 | Matsushita Electron Corp | Method for forming alignment mark, alignment method, manufacture of semiconductor device, and aligner |
| US7563503B2 (en) * | 2003-01-10 | 2009-07-21 | The University Of Connecticut | Coatings, materials, articles, and methods of making thereof |
| US7648851B2 (en) * | 2006-03-06 | 2010-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating backside illuminated image sensor |
-
2010
- 2010-12-15 CN CN2010105894233A patent/CN102097303B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102097303A (en) | 2011-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7494830B2 (en) | Method and device for wafer backside alignment overlay accuracy | |
| CN105779934B (en) | Manufacturing method of vapor deposition mask and manufacturing method of organic semiconductor element | |
| CN102097303B (en) | Photolithographic process for thick metal | |
| US7485975B2 (en) | Alignment error measuring mark and method for manufacturing semiconductor device using the same | |
| CN104471478A (en) | Phase-shifting mask blank, and phase-shifting mask and process for producing same | |
| CN102141726B (en) | Manufacturing method of photomask, photomask and manufacturing method of display device | |
| CN102608860B (en) | Lithographic methods, reticle combination and exposure system | |
| CN101201544B (en) | Semiconductor photolithography method | |
| CN101154029B (en) | Method for repairing photomask pattern defects | |
| CN103021803A (en) | Method for protecting thick metal layer photoetching alignment mark | |
| CN108569850A (en) | A kind of multiple layer metal mask seed layer and its manufacturing method for glass HF corrosion | |
| CN114236983B (en) | Manufacturing method of alignment mark of photoetching machine and wafer | |
| JPS63236319A (en) | Manufacture of semiconductor device | |
| EP1850369A1 (en) | Manufacturing process of an organic mask for microelectronic industry | |
| CN113512697A (en) | A high-precision silicon-based mask and its processing method | |
| US20020051914A1 (en) | Method of forming alignment marks for photolithographic processing | |
| US9805756B2 (en) | Writer pole formation | |
| KR970010569B1 (en) | Fabrication method of semiconductor device | |
| JP6299575B2 (en) | Sputtering apparatus and sputtering method | |
| CN109037049B (en) | Method for completely removing metal layer between wafer-level SOI material and glass electrostatic bonding surface | |
| US20240297124A1 (en) | Flexible design and placement of alignment marks | |
| JP4654811B2 (en) | Etching mask and dry etching method | |
| US20130252428A1 (en) | Photo-etching and Exposing System | |
| CN1282218C (en) | Structure of superposition marks and method of forming them | |
| CN104471675A (en) | Method for manufacturing thin film laminated element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |