CN102082084A - Method for forming epitaxial layer by utilizing selective epitaxial process - Google Patents
Method for forming epitaxial layer by utilizing selective epitaxial process Download PDFInfo
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- CN102082084A CN102082084A CN2009101994530A CN200910199453A CN102082084A CN 102082084 A CN102082084 A CN 102082084A CN 2009101994530 A CN2009101994530 A CN 2009101994530A CN 200910199453 A CN200910199453 A CN 200910199453A CN 102082084 A CN102082084 A CN 102082084A
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- 238000000034 method Methods 0.000 title claims abstract description 131
- 238000005530 etching Methods 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000007789 gas Substances 0.000 claims description 220
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- 239000012159 carrier gas Substances 0.000 claims description 42
- 229910052732 germanium Inorganic materials 0.000 claims description 27
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910000077 silane Inorganic materials 0.000 claims description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 11
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 11
- 229910000078 germane Inorganic materials 0.000 claims description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 8
- -1 methyl carbon alkane Chemical class 0.000 claims description 7
- 230000007547 defect Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 23
- 230000002950 deficient Effects 0.000 description 19
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910000043 hydrogen iodide Inorganic materials 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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Abstract
The invention discloses a method for forming an epitaxial layer by utilizing a selective epitaxial process, comprising the following steps: placing a semiconductor substrate into a processing chamber; heating the semiconductor substrate; introducing first reactive gas into the processing chamber; and forming the epitaxial layer on the semiconductor substrate, wherein, the first reactive gas comprises first etching gas; and introducing second reactive gas into the processing chamber so as to etch the epitaxial layer, wherein, the second reactive gas comprises second etching gas; and the flow velocity of the second etching gas is more than that of the first etching gas. By using the method provided by the invention, the defects of a corrosion pit can be reduced, and the yield of the product can be improved.
Description
Technical field
The present invention relates to integrated circuit and make the field, particularly relate to a kind of method of utilizing selective epitaxial process to form epitaxial loayer.
Background technology
In traditional technology, stress (stress) can be incorporated in the channel region of MOS transistor (MOS transistor), with increase carrier mobility (carrier mobility), and then the performance of raising MOS transistor.Generally speaking, for nmos pass transistor, wish at the channel region generation tensile stress (tensile stress) of source electrode to drain directions; And for the PMOS transistor, wish in the channel region generation compression (compressive stress) of source electrode to drain directions.
With the PMOS transistor is example, in order to produce compression at its channel region, need form epitaxial loayer at transistorized source electrode of PMOS and drain region, described epitaxial loayer is a SiGe, because SiGe has bigger lattice constant than silicon, so its rete inside has compression stress, and this compression pressure can be transferred on the horizontal direction, in the transistorized raceway groove of this PMOS, producing compression, and then improve the mobility in hole.And for nmos pass transistor, then need form carborundum at its source electrode and drain region, to improve the mobility of electronics.
When comprising two or more material on the Semiconductor substrate that will carry out selective epitaxial process, (selective epitaxial growth, SEG) technology forms SiGe or carborundum can to utilize selective epitaxial.For example, when comprising the silicon face that comes out and dielectric material surface on the described Semiconductor substrate, can carry out the growth step of selectivity silicon-containing film.Usually, described dielectric material can be silicon nitride, silica or silicon oxynitride etc.When these dielectric materials came out, the employed gas of described selective epitaxial process comprised etching gas.Described selective epitaxial process comprises deposition reaction and etching reaction, and described deposition reaction is carried out on Semiconductor substrate with different relatively reaction rates with etching reaction.Specifically, the deposition reaction of described selective epitaxial process is at silicon face grown junction crystal silicon, and at dielectric material surface growth indefinite form silicon or polysilicon.Described etching gas can be than fast many of the etch-rate of the silicon metal of silicon face to the etch-rate of the indefinite form silicon of dielectric surface growth or polysilicon, thereby can finish optionally epitaxial growth.
Certainly, also can carry out selective epitaxial process on the Semiconductor substrate of silicon face having only, to form epitaxial loayer at silicon face.To form silicon Germanium films is example, and the manufacturing method thereof that is commonly used to carry out the selective epitaxial deposition is to use dichlorosilane as silicon source gas, and germane is as germanium source gas, and hydrogen chloride is as etching gas, and with hydrogen or nitrogen as carrier gas.
Yet, find that in actual production when utilizing selective epitaxial process growth SiGe or carborundum, etch pit defective (pits defect) often appears in described SiGe or silicon carbide.Find after deliberation, the reason that this etch pit defective occurs be because, silicon is different with the lattice constant of germanium or carbon, cause after epitaxial growth, the SiGe that forms or the surface irregularity of carborundum films, the etch pit defective promptly occurred, this will have a strong impact on transistorized performance, cause the yield of product to descend.
In the United States Patent (USP) of patent No. US6825102B1, a kind of method of improving the quality of materials of defective semiconductor crystal material is disclosed, to address the above problem.This method may further comprise the steps: at first carry out partially or completely decrystallized to a zone of defective semiconductor crystal material, and decrystallized defective semiconductor crystal material heat-treated, so that described partly or completely decrystallized zone recrystallization, form and compare territory, recrystallization zone with defective semiconductor crystal material with the defect concentration that has reduced.This method shifts by the solid phase regrowth and extends through the defective of amorphous layer, thereby has eliminated any silicon (or other epitaxial loayer) defective relevant with growth.Yet this method is to be undertaken partially or completely decrystallizedly by the mode that ion injects, and this can introduce the unwanted ion of processing procedure, and this method increased more processing step, causes production cost to rise, and is unfavorable for enhancing productivity.
Summary of the invention
The invention provides a kind of method of utilizing selective epitaxial process to form epitaxial loayer, this method technology is simple, and the epi-layer surface that but can effectively solve prior art formation has the problem of etch pit defective.
For solving the problems of the technologies described above, the invention provides a kind of method of utilizing selective epitaxial process to form epitaxial loayer, comprising: Semiconductor substrate is placed in the process chamber, and heat described Semiconductor substrate; Feed first reacting gas in described process chamber, to form epitaxial loayer on this Semiconductor substrate, described first reacting gas comprises first etching gas; Feed second reacting gas in described process chamber, with the described epitaxial loayer of etching, described second reacting gas comprises second etching gas, and the flow velocity of described first etching gas of the velocity ratio of described second etching gas is big.
Optionally, described first etching gas is a hydrogen chloride, and the flow velocity of described first etching gas is 50～200sccm.
Optionally, described second etching gas is a hydrogen chloride, and the flow velocity of described second etching gas is 200～350ccm.
Optionally, described epitaxial loayer is a silicon Germanium films.
Optionally, described first reacting gas also comprises first silicon source gas, first carrier gas and the first germanium source gas, described first silicon source gas is silane or dichlorosilane, described first carrier gas is hydrogen or nitrogen, the described first germanium source gas is germane, the flow velocity of described first silicon source gas is 5～500sccm, and the flow velocity of described first carrier gas is 5～50slm, and the flow velocity of the described first germanium source gas is 5～500sccm.
Optionally, described second reacting gas also comprises second silicon source gas, second carrier gas and the second germanium source gas, described second silicon source gas is silane or dichlorosilane, described second carrier gas is hydrogen or nitrogen, the described second germanium source gas is germane, the flow velocity of described second silicon source gas is 5～500sccm, and the flow velocity of described second carrier gas is 5～50slm, and the flow velocity of the described second germanium source gas is 5～500sccm.
Optionally, described epitaxial loayer is a carborundum films.
Optionally, described first reacting gas also comprises first silicon source gas, first carrier gas and first carbon-source gas, described first silicon source gas is silane or dichlorosilane, described first carrier gas is hydrogen or nitrogen, described first carbon-source gas is a methyl carbon alkane, the flow velocity of described first silicon source gas is 5～500sccm, and the flow velocity of described first carrier gas is 5～50slm, and the flow velocity of described first carbon-source gas is 5～500sccm.
Optionally, described second reacting gas also comprises second silicon source gas, second carrier gas and second carbon-source gas, described second silicon source gas is silane or dichlorosilane, described second carrier gas is hydrogen or nitrogen, described second carbon-source gas is a methyl carbon alkane, the flow velocity of described second silicon source gas is 5～500sccm, and the flow velocity of described second carrier gas is 5～50slm, and the flow velocity of described second carbon-source gas is 5～500sccm.
Optionally, the pressure in the described process chamber is 1～200Torr, and described Semiconductor substrate is heated to 500～1000 ℃.
Compared with prior art, the method of utilizing selective epitaxial process to form epitaxial loayer provided by the invention comprises that feeding first reacting gas forms epitaxial loayer and feed two steps of the described epitaxial loayer of the second reacting gas etching, wherein, the flow velocity of first etching gas that the velocity ratio of second etching gas that feeds during the described epitaxial loayer of etching feeds when forming epitaxial loayer is big, therefore, be based on deposition reaction when feeding first reacting gas, and then on Semiconductor substrate, form the epitaxial loayer of target thickness, when feeding second reacting gas then based on etching reaction, thereby the described epitaxial loayer of etching is so that described epi-layer surface is smooth, avoid described epi-layer surface the etch pit defective to occur, improved the yield of product.
Description of drawings
Fig. 1 forms the flow chart of the method for epitaxial loayer for the selective epitaxial process that utilizes that the embodiment of the invention provided;
Fig. 2 A～2C is the generalized section of each step corresponding construction of the method for utilizing selective epitaxial process formation epitaxial loayer that the embodiment of the invention provided.
Embodiment
Mention that in background technology when utilizing selective epitaxial process growth SiGe or carborundum, the etch pit defective often appears in described SiGe or silicon carbide.The reason that this etch pit defective occurs is because silicon is different with the lattice constant of germanium or carbon, makes the SiGe of formation or the surface irregularity of carborundum films the etch pit defective promptly to have occurred, and this will have a strong impact on transistorized performance.
Core concept of the present invention is, a kind of method of utilizing selective epitaxial process to form epitaxial loayer is provided, this method comprises that feeding first reacting gas forms epitaxial loayer and feed two steps of the described epitaxial loayer of the second reacting gas etching, wherein, the flow velocity of first etching gas that the velocity ratio of second etching gas that feeds during the described epitaxial loayer of etching feeds when forming epitaxial loayer is big, therefore, be based on deposition reaction when feeding first reacting gas, and then on Semiconductor substrate, form the epitaxial loayer of target thickness, when feeding second reacting gas then based on etching reaction, thereby the described epitaxial loayer of etching is so that described epi-layer surface is smooth, avoid described epi-layer surface the etch pit defective to occur, improved the yield of product.
Please refer to Fig. 1, it forms the flow chart of the method for epitaxial loayer for the selective epitaxial process that utilizes that the embodiment of the invention provided, and in conjunction with this figure, the method comprising the steps of:
Step S10 places Semiconductor substrate in the process chamber, and heats described Semiconductor substrate;
Step S20 feeds first reacting gas in described process chamber, to form epitaxial loayer on this Semiconductor substrate, described first reacting gas comprises first etching gas;
Step S30 feeds second reacting gas in described process chamber, with the described epitaxial loayer of etching, described second reacting gas comprises second etching gas, and the flow velocity of described first etching gas of the velocity ratio of described second etching gas is big.
Below in conjunction with schematic diagram the method for utilizing selective epitaxial process to form epitaxial loayer of the present invention is described in more detail, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
First embodiment
With reference to Fig. 2 A, Semiconductor substrate 20 at first is provided, and this Semiconductor substrate 20 is placed in the process chamber, afterwards, heat described Semiconductor substrate 20.
In the present embodiment, Semiconductor substrate 20 is silicon substrates.Certainly, in other embodiments of the invention, Semiconductor substrate 20 also can comprise two or more material, for example, can comprise the silicon face and the dielectric material surface that come out on the Semiconductor substrate 20, on Semiconductor substrate 20, to carry out the growth step of silicon-containing film such as selectivity SiGe or carborundum.
Wherein, described process chamber is the reaction chamber that can carry out the equipment of selective epitaxial process, for example, and Epi Centura system and PolyGen system that company of Applied Materials produces.Certainly, can also be traditional batch high temperature furnace etc.
Pressure in the described process chamber can remain on 1～200Torr, and is preferable, and the pressure in the described process chamber remains between the 3Torr to 15Torr.
In described process chamber, Semiconductor substrate 20 can be heated to 500～1000 ℃.Drive with mode of heating and to be combined into by multiple gases that mixture reacts and the epitaxial growth silicon metal.Preferable, Semiconductor substrate 20 is heated between 600 ℃ to 750 ℃, in this temperature range, as the silane of silicon source gas effectively thermal decomposition form silicon.
Then, shown in Fig. 2 B, feed first reacting gas in described process chamber, to form epitaxial loayer 21 on this Semiconductor substrate 20, described first reacting gas comprises first etching gas.
In the present embodiment, utilizing the formed epitaxial loayer 21 of selective epitaxial process is silicon Germanium films.Described silicon Germanium films has bigger lattice constant than silicon, so SiGe can expand and produce compression after annealing, and then improves the mobility in hole.Yet, because silicon is different with the lattice constant of germanium, the surface irregularity of described epitaxial loayer 21.
Wherein, described first etching gas is hydrogen chloride (HCL is commonly called as hydrochloric acid).Use hydrogen chloride to replace gas such as chlorine and have many good qualities, for example, hydrogen chloride can be as the film in the chlorine heavy attack growth, and it can have more optionally etching.Yet should be realized that described first etching gas can also be other halogen-containing gas, for example, hydrogen bromide or hydrogen iodide.
Wherein, the flow velocity that flow in the described reative cell of described first etching gas is lower, so that the selection type epitaxial process of carrying out when feeding first reacting gas is based on deposition reaction, and then the very fast epitaxial loayer 21 that on Semiconductor substrate 20, forms target thickness.In the present embodiment, the flow velocity of described first etching gas is 50～200sccm.
In the present embodiment, described first reacting gas also comprises first silicon source gas (silicon predecessor), first carrier gas and the first germanium source gas (germanium predecessor).Described first silicon source gas, first carrier gas, the first germanium source gas and first etching gas are passed in the process chamber simultaneously, to form silicon Germanium films.
Wherein, described first silicon source gas is silane or dichlorosilane.Certainly, described first silicon source gas can also be higher silanes or organosilan.Described higher silanes comprises having chemical general formula Si
xH
(2x+2)Chemicals, disilane (Si for example
2H
6).Described organosilan comprises having chemical general formula R
ySi
xH
(2x+2-y)Chemicals, wherein R is methyl, ethyl or other alkyl.
The flow velocity of described first silicon source gas is 5～500sccm, and is preferable, and the flow velocity of described first silicon source gas is between between the 30sccm to 300sccm.
Wherein, described first carrier gas is hydrogen or nitrogen.Certainly, described first carrier gas composition that can also be argon gas or helium and above-mentioned gas.The flow velocity of described first carrier gas is 5～50slm.
Wherein, the described first germanium source gas is germane.Except germane, the germanium source gas that can be used for depositing SiGe also comprises higher Germanes and organic germane.Described higher Germanes comprises having chemical general formula Ge
xH
(2x+2)Chemicals, digermane (Ge for example
2H
6).Described organosilan comprises having chemical general formula R
yGe
xH
(2x+2-y)Chemicals, wherein R is methyl, ethyl or other alkyl.
The flow velocity of the described first germanium source gas is 5～500sccm, and is preferable, and the flow velocity of the described first germanium source gas is between between the 30sccm to 300sccm.
In the process that feeds first reacting gas formation epitaxial loayer, comprise deposition reaction and etching reaction, described deposition reaction is carried out on Semiconductor substrate 20 with different relatively reaction rates with etching reaction.Described first etching gas can be etched in the SiGe that silicon face forms, but be based on deposition reaction in this step, and then the very fast epitaxial loayer 21 that on Semiconductor substrate 20, forms target thickness, that is to say that the thickness of epitaxial loayer 21 has reached the thickness of the epitaxial loayer that expection will form.
Present embodiment does not limit the time of concrete feeding first reacting gas, and according to the thickness of the epitaxial loayer 21 that will form, those skilled in the art are by knowing the concrete reaction time.
Certainly, if comprise the silicon face and the dielectric material surface that come out on the Semiconductor substrate 20, so described first etching gas can be than fast many of the etch-rate of the epitaxial loayer of silicon face to the etch-rate of the epitaxial loayer of dielectric surface growth, thereby can finish optionally epitaxial growth.
Next, shown in Fig. 2 C, in described process chamber, feed second reacting gas, with the described epitaxial loayer 21 of etching, described second reacting gas comprises second etching gas, the flow velocity of described first etching gas of the velocity ratio of described second etching gas is big, with form the flawless epitaxial loayer 21 of thickness uniform outer surface '.
Forming epitaxial loayer 21 and the described epitaxial loayer 21 of etching is that original position is finished in same process chamber, and when feeding second reacting gas, the temperature of Semiconductor substrate 20 still is 500～1000 ℃, and is preferable, and Semiconductor substrate 20 is still between 600 ℃ to 750 ℃.Pressure in the described process chamber still remains on 1～200Torr, and is preferable, and the pressure in the described process chamber remains between the 3Torr to 15Torr.
Preferable, described second etching gas and described first etching gas are same gas, for example hydrogen chloride.The flow velocity that described second etching gas flow in the described reative cell is higher, so that the selection type epitaxial process of carrying out when feeding second reacting gas is based on etching reaction, described second etching gas can the described epitaxial loayer 21 of etching the surface, form the flawless epitaxial loayer 21 of thickness uniform outer surface '.
In the present embodiment, the flow velocity of described second etching gas is 200～350ccm.Because the corrosiveness of second etching gas, epitaxial loayer 21 ' the surface comparatively smooth, reduced the probability that the etch pit defective occurs, improved the yield of product.
Further, described second reacting gas can adopt the composition identical with first reacting gas, and promptly described second reacting gas also comprises second silicon source gas, second carrier gas and the second germanium source gas.Described second silicon source gas, second carrier gas, the second germanium source gas and second etching gas are passed in the process chamber simultaneously, to form silicon Germanium films.
Wherein, described second silicon source gas is silane or dichlorosilane, and the flow velocity of described second silicon source gas is between between the 5sccm to 500sccm.Described second carrier gas is hydrogen or nitrogen, and the flow velocity of described second carrier gas is between between the 5slm to 50slm.The described second germanium source gas is germane, and the flow velocity of the described second germanium source gas is between between the 5sccm to 500sccm.
The selective epitaxial process that utilizes that first embodiment of the invention provides forms the method for epitaxial loayer, this method technology is simple, only comprise that feeding first reacting gas forms epitaxial loayer and feed two steps of the described epitaxial loayer of the second reacting gas etching, be based on deposition reaction when feeding first reacting gas, and then on Semiconductor substrate, form the epitaxial loayer of target thickness, when feeding second reacting gas then based on etching reaction, thereby the described epitaxial loayer of etching can effectively avoid described epi-layer surface the etch pit defective to occur so that described epi-layer surface is smooth.
Second embodiment
In the first embodiment of the present invention, provided the specific embodiment that forms silicon Germanium films, for carborundum films, manufacture method is basic identical, and difference is to feed and includes carbon source gas (carbon predecessor) in first reacting gas and second reacting gas.Continuing with Fig. 2 A to Fig. 2 C below is reference, and the process that forms carborundum is illustrated.
With reference to Fig. 2 A, Semiconductor substrate 20 at first is provided, and this Semiconductor substrate 20 is placed in the process chamber, afterwards, heating Semiconductor substrate 20 can be heated to 500～1000 ℃ with described Semiconductor substrate 20, and the pressure in the described process chamber remains on 1～200Torr.
Then, shown in Fig. 2 B, feed first reacting gas in described process chamber, to form epitaxial loayer 21 on this Semiconductor substrate 20, described first reacting gas comprises first etching gas.
In the present embodiment, utilizing the formed epitaxial loayer of selective epitaxial process is carborundum films.Described carborundum films has littler lattice constant than silicon, so SiGe can expand and produce tensile stress after annealing, and then improves the mobility of electronics.
Described first etching gas is a hydrogen chloride, the flow velocity that flow in the described reative cell of described first etching gas is lower, so that the selection type epitaxial process of carrying out when feeding first reacting gas is based on deposition reaction, and then comparatively fast on Semiconductor substrate 20, form epitaxial loayer 21.Preferable, the flow velocity of described first etching gas is 50～200sccm.
Different with first embodiment, described first reacting gas also comprises first silicon source gas, first carrier gas and first carbon-source gas except first etching gas.Described first silicon source gas, first carrier gas, first carbon-source gas and first etching gas are passed in the process chamber simultaneously, to form carborundum films.
Described first silicon source gas is silane or dichlorosilane, and the flow velocity of described first silicon source gas is 5～500sccm.Described first carrier gas is hydrogen or nitrogen, and the flow velocity of described first carrier gas is 5～50slm.Described first carbon-source gas is a methyl carbon alkane, and the flow velocity of described first carbon-source gas is 5～500sccm.
Next, shown in Fig. 2 C, in described process chamber, feed second reacting gas, with the described epitaxial loayer 21 of etching, described second reacting gas comprises second etching gas, the flow velocity of described first etching gas of the velocity ratio of described second etching gas is big, with form the flawless epitaxial loayer 21 of surfacing '.The flow velocity of described second etching gas is 200～350ccm.
Preferable, described second etching gas and described first etching gas are same gas, for example the flow velocity that flow in the described reative cell of described second etching gas of hydrogen chloride is higher, so that the selection type epitaxial process of carrying out when feeding second reacting gas is based on etching reaction, thereby form on the etching epitaxial loayer 21 the smooth epitaxial loayer 21 of thickness surface ', avoid occurring the etch pit defective, improved the yield of product.
Further, described second reacting gas can adopt the composition identical with first reacting gas, and promptly described second reacting gas also comprises second silicon source gas, second carrier gas and second carbon-source gas.Described second silicon source gas, second carrier gas, second carbon-source gas and second etching gas are passed in the process chamber simultaneously, to form carborundum films.
Wherein, described second silicon source gas is silane or dichlorosilane, and the flow velocity of described second silicon source gas is between between the 5sccm to 500sccm.Described second carrier gas is hydrogen or nitrogen, and the flow velocity of described second carrier gas is between between the 5slm to 50slm.Described second carbon-source gas is a methyl carbon alkane, and the flow velocity of described second carbon-source gas is between between the 5sccm to 500sccm.
In sum, the invention provides a kind of method of utilizing selective epitaxial process to form epitaxial loayer, this method comprises: Semiconductor substrate is placed in the process chamber, and heat described Semiconductor substrate; Feed first reacting gas in described process chamber, to form epitaxial loayer on this Semiconductor substrate, described first reacting gas comprises first etching gas; Feed second reacting gas in described process chamber, with the described epitaxial loayer of etching, described second reacting gas comprises second etching gas, and the flow velocity of described first etching gas of the velocity ratio of described second etching gas is big.The present invention can reduce the etch pit defective, has improved the yield of product.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (21)
1. method of utilizing selective epitaxial process to form epitaxial loayer comprises:
Semiconductor substrate is placed in the process chamber, and heat described Semiconductor substrate;
Feed first reacting gas in described process chamber, to form epitaxial loayer on this Semiconductor substrate, described first reacting gas comprises first etching gas;
Feed second reacting gas in described process chamber, with the described epitaxial loayer of etching, described second reacting gas comprises second etching gas, and the flow velocity of described first etching gas of the velocity ratio of described second etching gas is big.
2. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 1 is characterized in that described first etching gas is a hydrogen chloride.
3. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 1 or 2 is characterized in that the flow velocity of described first etching gas is 50～200sccm.
4. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 3 is characterized in that described second etching gas is a hydrogen chloride.
5. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 4 is characterized in that the flow velocity of described second etching gas is 200～350ccm.
6. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 5 is characterized in that described epitaxial loayer is a silicon Germanium films.
7. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 6 is characterized in that described first reacting gas also comprises first silicon source gas, first carrier gas and the first germanium source gas.
8. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 7 is characterized in that described first silicon source gas is silane or dichlorosilane, and described first carrier gas is hydrogen or nitrogen, and the described first germanium source gas is germane.
9. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 8, it is characterized in that, the flow velocity of described first silicon source gas is 5～500sccm, and the flow velocity of described first carrier gas is 5～50slm, and the flow velocity of the described first germanium source gas is 5～500sccm.
10. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 6 is characterized in that described second reacting gas also comprises second silicon source gas, second carrier gas and the second germanium source gas.
11. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 10 is characterized in that described second silicon source gas is silane or dichlorosilane, described second carrier gas is hydrogen or nitrogen, and the described second germanium source gas is germane.
12. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 11, it is characterized in that, the flow velocity of described second silicon source gas is 5～500sccm, and the flow velocity of described second carrier gas is 5～50slm, and the flow velocity of the described second germanium source gas is 5～500sccm.
13. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 5 is characterized in that described epitaxial loayer is a carborundum films.
14. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 13 is characterized in that described first reacting gas also comprises first silicon source gas, first carrier gas and first carbon-source gas.
15. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 14 is characterized in that described first silicon source gas is silane or dichlorosilane, described first carrier gas is hydrogen or nitrogen, and described first carbon-source gas is a methyl carbon alkane.
16. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 15, it is characterized in that, the flow velocity of described first silicon source gas is 5～500sccm, and the flow velocity of described first carrier gas is 5～50slm, and the flow velocity of described first carbon-source gas is 5～500sccm.
17. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 13 is characterized in that described second reacting gas also comprises second silicon source gas, second carrier gas and second carbon-source gas.
18. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 17 is characterized in that described second silicon source gas is silane or dichlorosilane, described second carrier gas is hydrogen or nitrogen, and described second carbon-source gas is a methyl carbon alkane.
19. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 18, it is characterized in that, the flow velocity of described second silicon source gas is 5～500sccm, and the flow velocity of described second carrier gas is 5～50slm, and the flow velocity of described second carbon-source gas is 5～500sccm.
20. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 1 is characterized in that the pressure in the described process chamber is 1～200Torr.
21. the method for utilizing selective epitaxial process to form epitaxial loayer as claimed in claim 1 is characterized in that described Semiconductor substrate is heated to 500～1000 ℃.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103556219A (en) * | 2013-10-31 | 2014-02-05 | 国家电网公司 | Device for epitaxial growth of silicon carbide |
| CN104465387A (en) * | 2013-09-24 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device |
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2009
- 2009-11-26 CN CN2009101994530A patent/CN102082084A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465387A (en) * | 2013-09-24 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device |
| CN103556219A (en) * | 2013-10-31 | 2014-02-05 | 国家电网公司 | Device for epitaxial growth of silicon carbide |
| CN103556219B (en) * | 2013-10-31 | 2016-04-20 | 国家电网公司 | A kind of Device for epitaxial growth of silicon carbide |
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Application publication date: 20110601 |