CN102082019B - Power inductor and manufacturing method thereof - Google Patents
Power inductor and manufacturing method thereof Download PDFInfo
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- CN102082019B CN102082019B CN2010105685543A CN201010568554A CN102082019B CN 102082019 B CN102082019 B CN 102082019B CN 2010105685543 A CN2010105685543 A CN 2010105685543A CN 201010568554 A CN201010568554 A CN 201010568554A CN 102082019 B CN102082019 B CN 102082019B
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- 238000004519 manufacturing process Methods 0.000 title abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 229910000859 α-Fe Inorganic materials 0.000 claims description 30
- 239000004615 ingredient Substances 0.000 claims description 28
- 239000011159 matrix material Substances 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 15
- 238000013461 design Methods 0.000 abstract description 9
- 238000007639 printing Methods 0.000 abstract description 8
- 238000005266 casting Methods 0.000 abstract description 7
- 238000011161 development Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 3
- 239000000047 product Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000003475 lamination Methods 0.000 description 9
- 230000004907 flux Effects 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- 150000001298 alcohols Chemical class 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000035699 permeability Effects 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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Abstract
The invention discloses a chip type power inductor and a manufacturing method thereof. The inductor comprises a substrate, an inductance coil, a terminal stud and a dielectric layer, wherein the inductance coil is arranged in the substrate in a stacking manner, and both ends of the inductance coil are respectively connected with the terminal stud; and the dielectric layer is arranged in the substrate and separates the power inductor into an upper layer and a lower layer. After the inductor is formed by adopting a casting process and a lining electrode printing process, a finished product is manufactured through low temperature cofiring. Through the special air gap action of the dielectric layer, the characteristics of the stacking inductor are improved, and the DC bias characteristic and the flow resistance characteristic of the stacking power inductor are increased. Compared with a wound power inductor, the stacking power inductor is easier to reduce element size and thickness. The chip type power inductor is applicable to the development of new electronic elements, fills up the national blankness on such components, and has innovation in the aspects of materials, design, processes, measurement and the like. The product has advanced design, a self-developed process route is adopted, and the performance of the product can reach the international advanced level.
Description
Technical field
The present invention discloses a kind of inductance and manufacturing approach thereof, particularly a kind of SMD power inductance and manufacturing approach thereof.
Background technology
Along with the function of electronics portable terminal is on the increase, its operating voltage that needs also becomes diversified thereupon.Picture mobile phone, digital camera, PDA etc. are many with battery powered product, and the power circuit of their LCD backlight drive, power amplifier module and IC all needs different output voltage.Like this, need a DC to become different a plurality of voltages to supply power to the above-mentioned functions piece voltage transitions of battery supply to the transducer of DC.Therefore, in order to reduce power consumption, extending battery life, high efficiency electric pressure converter is widely used, and the key factor that has influence on converter efficiency is exactly a power inductor.Simultaneously, the electronics portable terminal becomes and more and more comes for a short time, more and more thinner, thereby the DC/DC transducer also needs littler, thinner.But along with inversion frequency is increasingly high, function is more and more, and is also increasingly high to the requirement of the rated current of little and slim power inductance.Winding-type inductance in the traditional handicraft because volume is bigger, more and more can not satisfy people's demand.
Summary of the invention
To the above-mentioned bigger shortcoming of mentioning of inductance volume of the prior art; The present invention provides a kind of new power inductance that is fit to very much DC/DC conversion use in the small mobile terminals product; Little, the thin thickness of its size can be saved more space to the user on volume.
Simultaneously, the present invention also adopts new material, design and production technology not only to accelerate inductance greatly and makes the development of new technology, and can also make the inductance rated current of making very big.
The technical scheme that the present invention solves its technical problem employing is: a kind of power inductance; Comprise matrix, inductance coil, terminal stud and dielectric layer; Inductance coil is range upon range of to be arranged in the matrix; The inductance coil two ends are connected with terminal stud respectively, and dielectric layer is arranged in the middle of the matrix, power inductance are divided into two-layer up and down.
A kind of as above-mentioned manufacturing approach of power inductance, manufacturing approach comprises the steps:
A, employing casting technique are made the ferrite infrabasal plate, and the thickness of infrabasal plate is 30～40 μ m;
B, on the infrabasal plate printing under connecting line, following connecting line thickness is 20～30 μ m;
C, the end points place makes tie point in following connecting line, and tie point thickness is 20～30 μ m;
D, employing casting technique are made one deck ferrite matrix, cover connecting line down, and this layer ferrite matrix is concordant with the tie point upper surface in the last step;
E, on the ferrite matrix on the last step printing layer of metal sheet, sheet thicknesses is 20～30 μ m;
F, repeating step C accomplish the lower metal sheet and make to step e 2 to 10 times;
G, on the lower metal sheet, make tie point, apply one deck dielectric layer material, the thickness of dielectric layer material is 20 μ m～30 μ m, and the tie point upper surface with in this layer of dielectric layer material is concordant;
H, at dielectric layer material printing layer of metal sheet, sheet thicknesses is 20～30 μ m;
I, repeating step C accomplish the upper strata sheet metal and make to step e 2 to 10 times;
J, the end points place makes tie point in the sheet metal of upper strata, and tie point thickness is 20～30 μ m;
Connecting line in K, the making, last connecting line thickness are 20～30 μ m;
L, employing casting technique are made the ferrite upper substrate, and the thickness of ferrite upper substrate is 30～40 μ m;
M, make terminal stud respectively at two ends.
The technical scheme that the present invention solves its technical problem employing further comprises:
Described inductance coil comprises the above lower metal sheet of one deck, above upper strata sheet metal and the tie point of one deck; Described lower metal sheet is " U " shape; Described upper strata sheet metal is " U " shape; Each sheet metal head and the tail link together through tie point in order, form the spirality inductance coil.
The thickness of described upper strata sheet metal and lower metal sheet is 20～30 μ m.
Thickness between described each layer sheet metal is 20～30 μ m.
Described thickness of dielectric layers is 20～30 μ m.
Described matrix adopting Ferrite Material, ferrite comprise principal component and first adding ingredient, second adding ingredient, and principal component comprises that mol ratio is the Fe of 45%-50%
2O
3, mol ratio is that the CuO of 10%-17%, NiO and the mol ratio that mol ratio is 13%-25% are the ZnO of 20%-30%; First adding ingredient is BI
2O
3, the mol ratio of first adding ingredient and principal component is 0.001～0.003: 100; Second adding ingredient comprises SiO
2, Cr
2O
3, Al
2O
3And WO
3, every kind of mol ratio with principal component in second adding ingredient is 0.003～0.009: 100.
Described dielectric layer comprises that weight ratio is that ZnO, the weight ratio of 50%-60% is the SiO of 30%-40%
2, weight ratio is the Li of 3%-4%
2CO
3With weight ratio be the BI of 3%-4%
2O
3
The invention has the beneficial effects as follows: the present invention improves the characteristic of laminated inductance through the special air gap effect of dielectric layer, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.The present invention compares with the winding-type power inductance, and the lamination-type power inductance is more prone to aspect component size and the thickness reducing.The present invention selects suitable interior electrode---argent for use for improving D.C. resistance, reduces the RDC of product, improves product Q value.Inductance of the present invention has good current attenuation characteristic and D.C. resistance characteristic; Adapt to the development of new electronic component; Fill up this type of blank of domestic components and parts, it has novelty at aspects such as material, design, technology, measurements, and product design is advanced; Adopt the process route of development voluntarily, performance of products has international most advanced level.
Below in conjunction with the accompanying drawing and the specific embodiment the present invention is further specified.
Description of drawings
Fig. 1 is an inductance VS direct current biasing performance plot of the present invention.
Fig. 2 is an inductance VS frequency characteristic figure of the present invention.
Fig. 3 is the present invention typical case magnetization curve figure.
Fig. 4 adds the magnetic hysteresis loop figure behind the air gap for the present invention.
Fig. 5 is a B-H characteristic comparison diagram of the present invention.
Fig. 6 is perspective view behind the manufacturing step A of the present invention.
Fig. 7 is perspective view behind the manufacturing step B of the present invention.
Fig. 8 is perspective view behind the manufacturing step C of the present invention.
Fig. 9 is perspective view behind the manufacturing step D of the present invention.
Figure 10 is perspective view behind the manufacturing step E of the present invention.
Figure 11 is perspective view behind the manufacturing step F of the present invention.
Figure 12 is perspective view behind the manufacturing step G of the present invention.
Figure 13 is perspective view behind the manufacturing step H of the present invention.
Figure 14 is perspective view behind the manufacturing step I of the present invention.
Figure 15 is perspective view behind the manufacturing step K of the present invention.
Figure 16 is perspective view behind the manufacturing step L of the present invention.
Figure 17 is perspective view behind the manufacturing step M of the present invention.
Among the figure, 1-matrix, 2-infrabasal plate, connecting line under the 3-, 4-tie point, 5-lower metal sheet, 6-dielectric layer, 7-upper strata sheet metal, the last connecting line of 8-, 9-upper substrate, 10-terminal stud.
Embodiment
Present embodiment is the preferred embodiment for the present invention, and other all its principles are identical with present embodiment or approximate with basic structure, all within protection range of the present invention.
The present invention is a kind of manufacturing approach of power inductance, and its manufacturing approach comprises the steps:
A, employing casting technique are made ferrite infrabasal plate 2, and in the present embodiment, Ferrite Material uses as solution, and the thickness of infrabasal plate 2 is 30～40 μ m;
B, at the following connecting line 3 of printing on the infrabasal plate 2, the effect of following connecting line 3 is to connect outer electrode (being the outside terminal stud 10 of matrix 1) and lower metal sheet 5, following connecting line 3 thickness are 20～30 μ m;
C, the end points place makes tie point 4 in following connecting line 3, and the effect of tie point 4 is sheet metals of each layer of connection, and tie point 4 thickness are 20～30 μ m;
D, employing casting technique are made one deck ferrite matrix 1, cover connecting line 3 down, and this layer ferrite matrix 1 is concordant with tie point 4 upper surfaces in the last step;
E, on the ferrite matrix 1 on the last step printing layer of metal sheet, sheet thicknesses is 20～30 μ m;
F, repeating step C are for 2 to 10 times (according to concrete inductance parameters decisions) to step e, and completion lower metal sheet 5 is made;
G, on lower metal sheet 5, make tie point 4, apply one deck dielectric layer 6 materials, the thickness of dielectric layer 6 materials is 20 μ m～30 μ m, and tie point 4 upper surfaces with in this layer of dielectric layer 6 materials are concordant, and this layer is equivalent to the effect of air gap;
H, at dielectric layer 6 materials printings layer of metal sheet, in the present embodiment, dielectric layer 6 is actually as solution and uses, sheet thicknesses is 20～30 μ m;
I, repeating step C accomplish upper strata sheet metal 7 and make to step e 2 to 10 times (according to concrete inductance parameters decision);
J, the end points place makes tie point 4 in upper strata sheet metal 7, and tie point 4 thickness are 20～30 μ m;
Connecting line 8 in K, the making, and last connecting line 8 thickness are 20～30 μ m;
L, employing casting technique are made ferrite upper substrate 9, and the thickness of ferrite upper substrate 9 is 30～40 μ m; After this step, the product that forms is carried out low temperature co-fired under 900 ℃ situation, half an hour approximately, in the present embodiment, low temperature co-firedly adopt conventional LTCC technology to get final product;
M, make terminal stud 10 respectively, promptly form finished product at the product two ends.
Adopt the produced inductance of said method; The structure that is the inductance among the present invention comprises matrix 1, inductance coil, terminal stud 10 and dielectric layer 6; Inductance coil is range upon range of to be arranged in the matrix 1; The inductance coil two ends are connected with terminal stud 10 respectively, and dielectric layer 6 is arranged in the middle of the matrix 1, power inductance are divided into two-layer up and down.In the present embodiment, inductance coil comprises the above lower metal sheet 5 of one deck, above upper strata sheet metal 7 and the tie point 4 of one deck, and lower metal sheet 5 is " U " shape; Described upper strata sheet metal 7 is " U " shape; Each sheet metal head and the tail link together through tie point 4 in order, form the spirality inductance coil, its at the middle and upper levels the thickness of sheet metal 7 and lower metal sheet 5 be 20～30 μ m; Through changing the thickness of upper strata sheet metal 7 and lower metal sheet 5, can change the Q value parameter of inductance of the present invention; Thickness between each layer sheet metal, promptly the thickness of tie point 4 also is 20～30 μ m, through changing the thickness of tie point; Can improve the cut-off frequency of inductance of the present invention; The thickness of dielectric layer 6 also is 20～30 μ m, through changing the thickness of dielectric layer, can change the anti-current parameters of inductance of the present invention.
In the present embodiment, matrix 1 adopts Ferrite Material, and ferrite comprises principal component and first adding ingredient, second adding ingredient, and principal component comprises that mol ratio is the Fe of 45%-50%
2O
3, mol ratio is that the CuO of 10%-17%, NiO and the mol ratio that mol ratio is 13%-25% are the ZnO of 20%-30%; First adding ingredient is BI
2O
3, the mol ratio of first adding ingredient and principal component is 0.001～0.003: 100; Second adding ingredient comprises SiO
2, Cr
2O
3, Al
2O
3And WO
3, every kind of mol ratio with principal component in second adding ingredient is 0.003～0.009: 100.Adopt in the present embodiment Ferrite Material can apply magnetic field be saturation flux density Bs under the 4000A/m be 470mT or more than, Ferrite Material has the low temperature co-fired characteristic with argent, dielectric material, sintering temperature is about 900 ℃.In the present embodiment, Ferrite Material is machined to the granule of granularity below 1.0 μ m with each component material through ball grinding method earlier in use; Then after fully mixed, add in the alcohols solvent, form liquid slurry; In the present embodiment; The alcohols solvent that adopts is the second butanols, and wherein, the part by weight of solute and alcohols solvent is 1: 10.
Embodiment one: in the present embodiment, ferritic principal component comprises that mol ratio is 45% Fe
2O
3, mol ratio is that 12% CuO, mol ratio are that 13% NiO and mol ratio are 30% ZnO; First adding ingredient is BI
2O
3With the mol ratio of principal component be 0.001: 100; The every kind of component in second adding ingredient and the mol ratio of principal component are 0.003: 100.After tested, the Ferrite Material in the present embodiment can apply magnetic field be saturation flux density Bs under the 4000A/m be 470mT or more than.
Embodiment two: in the present embodiment, ferritic principal component comprises that mol ratio is 45% Fe
2O
3, mol ratio is that 10% CuO, mol ratio are that 25% NiO and mol ratio are 30% ZnO; First adding ingredient is BI
2O
3With the mol ratio of principal component be 0.002: 100; The every kind of component in second adding ingredient and the mol ratio of principal component are 0.005: 100.After tested, the Ferrite Material in the present embodiment can apply magnetic field be saturation flux density Bs under the 4000A/m be 470mT or more than.
Embodiment three: in the present embodiment, ferritic principal component comprises that mol ratio is 50% Fe
2O
3, mol ratio is that 17% CuO, mol ratio are that 18% NiO and mol ratio are 20% ZnO; First adding ingredient is BI
2O
3With the mol ratio of principal component be 0.002: 100; The every kind of component in second adding ingredient and the mol ratio of principal component are 0.005: 100.After tested, the Ferrite Material in the present embodiment can apply magnetic field be saturation flux density Bs under the 4000A/m be 470mT or more than.
Embodiment four: in the present embodiment, ferritic principal component comprises that mol ratio is 45% Fe
2O
3, mol ratio is that 10% CuO, mol ratio are that 20% NiO and mol ratio are 25% ZnO; First adding ingredient is BI
2O
3With the mol ratio of principal component be 0.002: 100; The every kind of component in second adding ingredient and the mol ratio of principal component are 0.007: 100.After tested, the Ferrite Material in the present embodiment can apply magnetic field be saturation flux density Bs under the 4000A/m be 470mT or more than.
Embodiment five: in the present embodiment, ferritic principal component comprises that mol ratio is 48% Fe
2O
3, mol ratio is that 16% CuO, mol ratio are that 13% NiO and mol ratio are 23% ZnO; First adding ingredient is BI
2O
3With the mol ratio of principal component be 0.003: 100; The every kind of component in second adding ingredient and the mol ratio of principal component are 0.009: 100.After tested, the Ferrite Material in the present embodiment can apply magnetic field be saturation flux density Bs under the 4000A/m be 470mT or more than.
In the present embodiment, dielectric layer 6 is equivalent to the effect of air gap, and dielectric layer 6 thickness are 20～30 μ m, and dielectric layer 6 comprises that weight ratio is that ZnO, the weight ratio of 50%-60% is the SiO of 30%-40%
2, weight ratio is the Li of 3%-4%
2CO
3With weight ratio be the BI of 3%-4%
2O
3Dielectric layer 6 materials dielectric constant under the 1M frequency in the present embodiment is 10～40, and frequency has very high quality factor q when 4GHZ be about 10000, and resistivity of material reaches 10
19Ω cm.Dielectric layer 6 materials have the low temperature co-fired characteristic with argent, Ferrite Material, and sintering temperature is about 900 ℃.Through the special air gap effect of dielectric layer 6, improve the characteristic of laminated inductance, improve the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.In the present embodiment, the dielectric layer material is machined to the granule of granularity below 1.0 μ m with each component material through ball grinding method earlier in use; Then after fully mixed, add in the alcohols solvent, form liquid slurry; In the present embodiment; The alcohols solvent that adopts is the second butanols, and wherein, the part by weight of solute and alcohols solvent is 1: 10.
Embodiment one: in the present embodiment, dielectric layer 6 comprises that weight ratio is that 50% ZnO, weight ratio are 40% SiO
2, weight ratio is 5% Li
2CO
3With weight ratio be 5% BI
2O
3Through test, the dielectric layer 6 materials dielectric constant under the 1M frequency in the present embodiment is 10～40, and frequency has very high quality factor q when 4GHZ be about 10000, and resistivity of material reaches 10
19Ω cm can improve the characteristic of laminated inductance, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.
Embodiment two: in the present embodiment, dielectric layer 6 comprises that weight ratio is that 54% ZnO, weight ratio are 39% SiO
2, weight ratio is 3.5% Li
2CO
3With weight ratio be 3.5% BI
2O
3Through test, the dielectric layer 6 materials dielectric constant under the 1M frequency in the present embodiment is 10～40, and frequency has very high quality factor q when 4GHZ be about 10000, and resistivity of material reaches 10
19Ω cm can improve the characteristic of laminated inductance, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.
Embodiment three: in the present embodiment, dielectric layer 6 comprises that weight ratio is that 55% ZnO, weight ratio are 37% SiO
2, weight ratio is 4% Li
2CO
3With weight ratio be 4% BI
2O
3Through test, the dielectric layer 6 materials dielectric constant under the 1M frequency in the present embodiment is 10～40, and frequency has very high quality factor q when 4GHZ be about 10000, and resistivity of material reaches 10
19Ω cm can improve the characteristic of laminated inductance, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.
Embodiment four: in the present embodiment, dielectric layer 6 comprises that weight ratio is that 58% ZnO, weight ratio are 35% SiO
2, weight ratio is 3% Li
2CO
3With weight ratio be 4% BI
2O
3Through test, the dielectric layer 6 materials dielectric constant under the 1M frequency in the present embodiment is 10～40, and frequency has very high quality factor q when 4GHZ be about 10000, and resistivity of material reaches 10
19Ω cm can improve the characteristic of laminated inductance, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.
Embodiment five: in the present embodiment, dielectric layer 6 comprises that weight ratio is that 60% ZnO, weight ratio are 32% SiO
2, weight ratio is 5% Li
2CO
3With weight ratio be 3% BI
2O
3Through test, the dielectric layer 6 materials dielectric constant under the 1M frequency in the present embodiment is 10～40, and frequency has very high quality factor q when 4GHZ be about 10000, and resistivity of material reaches 10
19Ω cm can improve the characteristic of laminated inductance, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.
After having introduced the dielectric layer 6 that is equivalent to the air gap effect among the present invention, its electrical characteristic has obtained improving significantly.Magnetic core can make magnetic hysteresis loop tilt after adding air gap, and remanent magnetism significantly reduces.The inclination of magnetic hysteresis loop does not change coercive force H
cSize, do not change magnetic saturation magnet density B yet
sAnd the high-magnetodensity B of linear zone
mSize.Just make the sweep of magnetic hysteresis loop extend to bigger magnetic field strength region.Please referring to accompanying drawing 4, the effective permeability that as can beappreciated from fig. 4 adds behind the air gap approximates H
cThe slope of the magnetic hysteresis loop at place.
B
R (withgap)=μ
oμ
HcH
C≈ μ
oμ
(withgap)H
C(formula one)
By Ampere circuit law ∮
LHdl=∑ I can derive:
(formula two)
In the formula, μ
rIt is the relative permeability of magnetic core; l
aBe gas length, l
eBe the effective magnetic circuit length before the interpolation air gap.
General desirable B
R (withgap)=0.02T, the alternating flux density that can effectively utilize like this
Δ B=B
m-Br
(withgap)=0.18T so just can improve the utilance of magnetic core greatly.And at this moment required air gap l
aLength minimum, l
aCaused leakage flux is also in controllable scope.With typical ferrite is example, (l
e=0.102m, U
r=2400 ± 25%, H
c=10A/m),
Its remanent magnetism B
rBeing reduced to the needed gas length of 0.02T is:
So little air gap can be realized on technology.But introduce air gap and cost is also arranged, magnetizing inductance L
mReceive the influence of air gap very big:
The length of magnetic path is l
e, it is l that air gap grinds length
a, magnetizing inductance coefficient L
mThe ratio that reduces is:
The inductance decrease is after introducing air gap:
According to above principle, the present invention increases one deck low magnetic permeability dielectric material through curtain coating or printing in inductance when design lamination power inductance, and effect is equal to the air gap of magnetic core.
The present invention adopts new internal electrode (promptly forming the sheet metal of inductance coil) formation technology, makes low D.C. resistance of the present invention become possibility.Adopt the Ferrite Material technology and the construction design method of original creation to make the improvement of direct current biasing characteristic become possibility among the present invention, increase, also can stop the straight line of inductance value to descend, please referring to accompanying drawing 1, accompanying drawing 2 and accompanying drawing 3 even flow through the direct current of inductance.
The present invention improves the characteristic of laminated inductance through the special air gap effect of dielectric layer 6, improves the direct current biasing characteristic and the anti-properties of flow of lamination power inductance.The present invention compares with the winding-type power inductance, and the lamination-type power inductance is more prone to aspect component size and the thickness reducing.The present invention selects suitable interior electrode---argent for use for improving D.C. resistance, reduces the RDC of product, improves product Q value.Inductance of the present invention has good current attenuation characteristic and D.C. resistance characteristic; Adapt to the development of new electronic component; Fill up this type of blank of domestic components and parts, it has novelty at aspects such as material, design, technology, measurements, and product design is advanced; Adopt the process route of development voluntarily, performance of products has international most advanced level.
Claims (5)
1. power inductance; It is characterized in that: described inductance comprises matrix, lower substrate, inductance coil, terminal stud and dielectric layer; Inductance coil is range upon range of respectively to be arranged in matrix and the lower substrate, and the inductance coil two ends are connected with terminal stud respectively, and dielectric layer is arranged in the middle of matrix and the lower substrate; Power inductance is divided into two-layer up and down; Described matrix and the lower substrate employing Ferrite Material gone up, ferrite comprise principal component and first adding ingredient, second adding ingredient, and principal component comprises that mol ratio is the Fe of 45%-50%
2O
3, mol ratio is that the CuO of 10%-17%, NiO and the mol ratio that mol ratio is 13%-25% are the ZnO of 20%-30%; First adding ingredient is Bi
2O
3, the mol ratio of first adding ingredient and principal component is 0.001 ~ 0.003:100; Second adding ingredient comprises SiO
2, Cr
2O
3, Al
2O
3And WO
3, in second adding ingredient the every kind mol ratio with principal component is 0.003 ~ 0.009:100, described dielectric layer comprises that weight ratio is that ZnO, the weight ratio of 50%-60% is the SiO of 30%-40%
2, weight ratio is the Li of 3%-5%
2CO
3With weight ratio be the Bi of 3%-5%
2O
3
2. power inductance according to claim 1; It is characterized in that: described inductance coil comprises the above lower metal sheet of one deck, above upper strata sheet metal and the tie point of one deck; Described lower metal sheet is " U " shape; Described upper strata sheet metal is " U " shape, and each sheet metal head and the tail link together through tie point in order, form the spirality inductance coil.
3. power inductance according to claim 2 is characterized in that: the thickness of described upper strata sheet metal and lower metal sheet is 20 ~ 30 μ m.
4. power inductance according to claim 2 is characterized in that: the thickness between described each layer sheet metal is 20 ~ 30 μ m.
5. power inductance according to claim 1 is characterized in that: described thickness of dielectric layers is 20 ~ 30 μ m.
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| CN2010105685543A CN102082019B (en) | 2010-12-01 | 2010-12-01 | Power inductor and manufacturing method thereof |
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|---|---|---|---|
| CN2010105685543A CN102082019B (en) | 2010-12-01 | 2010-12-01 | Power inductor and manufacturing method thereof |
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| CN102412059B (en) * | 2011-08-06 | 2012-11-21 | 江苏华兴电子有限公司 | Method for manufacturing chip inductance element from low-temperature cofired ferrite raw material belt |
| CN107656221B (en) * | 2017-09-08 | 2019-08-23 | 国网江苏省电力公司电力科学研究院 | A kind of transformer core remanent magnetism evaluation method based on minor loop's slope |
| CN118472632B (en) * | 2024-06-03 | 2025-03-18 | 南京航空航天大学 | An antistatic inductively loaded frequency selective surface for satellite antenna cover |
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| KR100479625B1 (en) * | 2002-11-30 | 2005-03-31 | 주식회사 쎄라텍 | Chip type power inductor and fabrication method thereof |
| CN1191594C (en) * | 2002-12-06 | 2005-03-02 | 清华大学 | Material of VHF multilayer chip inductor or chip magnetic bead and its preparation method |
| JP3971766B2 (en) * | 2004-11-29 | 2007-09-05 | Ｔｄｋ株式会社 | Ferrite material and electronic parts using the same |
| WO2009081984A1 (en) * | 2007-12-25 | 2009-07-02 | Hitachi Metals, Ltd. | Stacked inductor and power converter using the stacked inductor |
| US20110095856A1 (en) * | 2008-05-09 | 2011-04-28 | Taiyo Yuden Co., Ltd. | Multi layer inductor and method for manufacturing the same |
| JP4618383B2 (en) * | 2008-05-12 | 2011-01-26 | Ｔｄｋ株式会社 | Dielectric ceramic composition, multilayer composite electronic component, multilayer common mode filter, multilayer ceramic coil and multilayer ceramic capacitor |
| CN101834047B (en) * | 2010-05-18 | 2013-03-06 | 深圳顺络电子股份有限公司 | Ferrite material and laminated electronic element made of same |
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