CN102081308B - Measuring device for wave aberration of projection objective and method thereof - Google Patents
Measuring device for wave aberration of projection objective and method thereof Download PDFInfo
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- 206010010071 Coma Diseases 0.000 claims description 2
- 201000009310 astigmatism Diseases 0.000 claims description 2
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Abstract
A measuring device for wave aberration of a projection objective comprises a light source, object surface marks, the projection objective, image surface marks and a photoelectric detector, wherein the object surface marks can diffract lights emitted by the light source; the projection objective is used for imaging the object surface marks; the structures of the image surface marks are the same as those of the object surface marks, and the sizes of the image surface marks are matched with those of the object surface marks based on the multiplying power of the projection objective; the object surface marks are imaged on the image surface marks via the projection objective; the photoelectric detector is used for receiving interference fringes of secondary diffraction lights which are generated at the image surface marks in a distant field; and the diffraction level of diffraction lights which are obtained by diffracting the lights from the light source through the object surface marks loses at least one level.
Description
Technical field
The present invention relates to a kind of measuring device for wave aberration of projection objective and method.
Background technology
In the prior art, by the pattern being formed on various masks, with exposure light illumination, the middle exposure device aforementioned pattern being copied on the substrates such as wafer, glass substrate that are coated with photoresist via imaging optical system is known.
In recent years, semiconductor element is more and more highly integrated, requires the further miniaturization of its circuit patterns.Along with diminishing of lithographic feature size, the especially use of off-axis illumination and phase shifting mask, aberration becomes more and more outstanding to the impact of photoetching quality.Therefore the wave aberration measuring technique of litho machine projection imaging optical system is indispensable.
The measurement of imaging optical system aberration, carries out conventionally as follows.Take projection objective system below as example.Aberration measurement is placed on object plane with mask, the regulation pattern being formed on mask is imaged on the substrate in the image planes that are positioned at projection objective system, imaging is developed.Then utilize scanning electron microscope (SEM) to measure the picture having developed, according to measurement result, obtain the aberration (prior art 1 of aforementioned projection objective lens optical system, Peter Dirksen, Casper A.Juffermans, Ruud J.Pellens, Mireille Maenhoudt, Peter Debisschop. " Novelaberration monitor for optical lithography. " Proc.SPIE 1999,3679,77-86.).In the method for above-mentioned technology, because photoresist crawling is even, the inhomogeneous treatment process error that waits of developing, can not fully guarantee the measuring accuracy of aberration.And before utilizing SEM to observe, need to carry out pre-treatment to silicon chip, as developing process, therefore the mensuration for aberration needs long time.
For fear of these problems, people have proposed the method for utilizing transmission-type image-position sensor (TIS) to measure aforementioned projection objective wave aberration, it is TAMIS technology (prior art 2, Van der Laan, Hans, Dierichs, Marcel, vanGreevenbroek, Henk, McCoo, Elaine, Stoffels, Fred, Pongers, Richard, Willekers, Rob. " Aerial image measurement methods for fast aberration set-up and illumination pupilverification. " Proc.SPIE 2001, 4346, 394-407).But the method measuring accuracy is lower, and only can measure low order Zernike coefficient.
In prior art US6650399, described a kind of interference wave aberration measurement scheme, the wave aberration measuring system in this scheme is by object plane grating, and image planes grating and the far field light intensity detection system being positioned at after aperture form.This scheme can each rank zernike coefficient of high-acruracy survey.But because the object plane adopting in this scheme is labeled as two meta-tag, utilize that two meta-tag produce 0 grade and ± 1 order diffraction light forms interference fringe and detects projection objective wave aberration.Due to use the binary cycle during mask 0 grade and ± wavefront information that 1 order diffraction light carries objective lens pupil diverse location, in the interference fringe image of its generation, will there is 0 grade ,+1 grade ,-1 grade Three-beam Interfere district, 0, + 1 grade of two-beam interference district and 0,-1 grade of two-beam interference region, in solving wave aberration process, these three zone boundaries are difficult to distinguish, thereby the measuring process of making and wave aberration inversion algorithm are complicated, simultaneously because this division error has reduced projection objective wave aberration measuring accuracy.
Summary of the invention
The object of the present invention is to provide a kind of measuring device for wave aberration of projection objective and measuring method, simplify wave aberration measuring process, improve wave aberration measuring accuracy.The present invention has adopted following measuring device for wave aberration of projection objective and method:
A wave aberration measurement mechanism, comprising:
Light source;
Object plane mark, its light that can send light source carries out diffraction;
Projection objective, for carrying out imaging to object plane mark;
Image planes mark, its structure is identical with object plane mark, and the size of its size based on object lens multiplying power and object plane mark matches, and object plane mark images on image planes mark by projection objective;
Photodetector, the interference fringe that its re-diffraction light that receives the generation of image planes mark produces in far field,
It is characterized in that, the order of diffraction of the diffraction light of the light that light source sends after object plane mark diffraction time lacks at least one-level.
Wherein, in diffraction light+1 order diffraction light or-1 order diffraction light disappearance.
Wherein, one or more in lines, square hole, square hole or diamond hole of described object plane mark form.
Wherein, object plane mark is comprised of identical line markings of the cycle of organizing more, and every group of line markings all comprises the lines of three printing opacities, and the position that the ratio of the width of three lines is 1: 2: 1, see through the light of three lines is respectively 0 ° mutually, and 90 °, 180 °.
Wherein, object plane mark is comprised of identical line markings of the cycle of organizing more, and every group of line markings all comprises lines and two light tight lines of two printing opacities, the ratio of the width of four lines is 1: 1: 1: the position of the light of 1, four lines is followed successively by 0 °, 0 ° mutually, 0 °, 180 °.
Wherein, described light source is ultraviolet, deep ultraviolet, the EUV light sources such as mercury lamp or excimer laser.
Wherein, described wave aberration comprises that coma, spherical aberration, astigmatism, three ripples are poor.
Utilize above-mentioned measuring device for wave aberration of projection objective to measure a method for projection objective wave aberration, the method comprises the following steps:
1) utilize projection objective that object plane mark is imaged on image planes mark;
2) utilize image planes mark object plane mark imaging to carry out re-diffraction, re-diffraction light forms interference fringe in far field;
3) utilize photodetector to receive the pattern of interference fringe;
4) pattern of interference fringe is carried out to data processing and obtain projection objective wave aberration.
Wherein, along perpendicular to the direction of mark mobile object plane mark periodically, realize phase shift.
Wherein, the phase shift displacement between mark was determined by object plane mark grating cycle and phase shift step number.
Wherein, along perpendicular to the direction of mark mobile image planes mark periodically, realize phase shift.
Wherein, the phase shift displacement between mark was determined by object plane mark grating cycle and phase shift step number.
Owing to adopting special phase structure, during thereby the order of diffraction of the diffraction light obtaining through object plane mark diffraction is inferior+1 order diffraction light or the scarce level of-1 order diffraction light, therefore use this mark to carry out when wave aberration is measured can not producing Three-beam Interfere district, make wave aberration measuring process simple, improve wave aberration measuring accuracy.
Than prior art, the present invention has the following advantages:
1, in the diffraction light due to object plane mark+1 order diffraction light or-1 order diffraction light lack level, thereby eliminate secondary harmonic wave, make measuring process and Measurement Algorithm become simple;
2, because secondary harmonic wave is directly eliminated by mark design, thereby improved wave aberration measuring accuracy.
Accompanying drawing explanation
By the embodiment of the present invention and in conjunction with the description of its accompanying drawing, can further understand the purpose of the invention, specific structure features and advantages.Wherein, accompanying drawing is:
Figure 1 shows that the structural representation of wave aberration measurement mechanism according to an embodiment of the invention;
Figure 2 shows that the structural representation of object plane mark according to an embodiment of the invention;
Figure 3 shows that one group of line markings in the object plane mark in Fig. 2;
Figure 4 shows that the diffraction schematic diagram of object plane mark according to an embodiment of the invention;
Figure 5 shows that Three-beam Interfere figure;
Figure 6 shows that two-beam interference pattern;
Figure 7 shows that the structural representation of object plane mark according to an embodiment of the invention;
Figure 8 shows that one group of line markings in the object plane mark in Fig. 7;
Figure 9 shows that the diffraction schematic diagram of object plane mark according to an embodiment of the invention;
Figure 10 shows that two-beam interference pattern.
Embodiment
Below, describe in detail according to a preferred embodiment of the invention by reference to the accompanying drawings.For convenience of description and highlight the present invention, in accompanying drawing, omitted existing associated components in prior art, and by the description of omitting these well-known components.
The first embodiment:
Figure 1 shows that the structural representation of wave aberration measurement mechanism according to an embodiment of the invention.Object plane mark 104 in substrate 107 is imaged onto on the image planes mark 103 in substrate 102 by projection objective 101, wherein, object plane mark 104 is identical with image planes mark 103 structures, but image planes mark dimensionally the size based on object lens multiplying power and object plane mark match.The structure of the object plane mark 103 in substrate 107 as shown in Figure 2.Each object plane mark 104 is comprised of two sub-marks 201 and 202, and two sub-marks 201 are identical with 202 structure, and sub-mark 201 differs 90 degree with sub-mark 202 directions.Sub-mark 201 forms by identical line markings of many groups cycle with sub-mark 202, as shown in Figure 3.Every group of line markings all comprises 4 lines that live width is identical, and 301,302,303.304.Lines 301,303 are light tight region, and 302,304 lines are transmission region, and the phase place that sees through this light of 302,304 is respectively 0,180 degree.Incide incident light 401 in substrate 107 after the diffraction of object plane mark 104, form 0 order diffraction light 402 and+1 order diffraction light 403, as shown in Figure 4.
Mark 201 is positioned over to field of illumination, and illumination light can be full of projection objective pupil, and mark 201 is imaged on image planes mark 103; 103 pairs of object plane mark 201 imagings of image planes mark are carried out diffraction, and re-diffraction light produces interference fringe and received by photodetector 108 in far field, store the interference fringe image that photodetector 108 records.Mark 202 is positioned over to field of illumination, and illumination light images in mark 202 on image planes mark 103; 103 pairs of object plane mark 202 imagings of image planes mark are carried out diffraction, and re-diffraction light produces interference fringe and received by photodetector 108 in far field, store the interference fringe image that photodetector 108 records simultaneously.
The interference fringe image that photodetector 108 is received, utilizes shear interference wavefront method for solving can obtain the wave aberration of projection objective.The wave aberration of measuring central point in projection objective visual field of take is example, and mark 201 and 202 adopts respectively 0 degree and 90 to spend and is orientated, and in mark, the live width of lines 301,302,303,304 can be taken as 64 μ m.Projection objective magnification is 0.25, and image planes label size is dwindled 4 times with respect to the size of object plane mark.During measurement, object plane mark 104 is imaged on image planes mark 103 by projection objective, the picture of object plane mark 104 carries the wave aberration of projection objective, the re-diffraction of the image planes mark 103 of the identical live width of process, diffraction light forms interference fringe in far field, and interference fringe is received and stores by photelectric receiver 108, utilizes the interference fringe image storing, through image, process and certain algorithm, can calculate projection objective wave aberration.
When Fig. 5 and Fig. 6 have reflected respectively two-beam interference and Three-beam Interfere, interference situation on photelectric receiver, the white portion in Fig. 5 represents Three-beam Interfere, light gray zones domain representation two-beam interference, Dark grey region representation is without interference, and black region is without light intensity.In Fig. 6, white portion represents two-beam interference, and Dark grey region representation is without interference, and black region is without light intensity.With respect to Fig. 5, the interference region shown in Fig. 6 is more obvious, can clearly distinguish two-beam interference region.By the position of mobile object plane mark or image planes mark periodically, adopt the method for phase shift to modulate interference fringe, by obtaining higher wave aberration measuring accuracy after demodulation.
Indicia patterns, except can being comprised of a plurality of lines, also can consist of a plurality of square holes of periodically arranging, square hole or diamond hole.
Light source can be the ultraviolets such as mercury lamp or excimer laser, deep ultraviolet, EUV light source.
Can comprise that the mask of the mark of different characteristic size and shape carries out the change of shear distance as described mask by use, thereby improve wave aberration measuring accuracy.Characteristic dimension comprises size, the spacing of each ingredient in mark.
The second embodiment:
Adopt the wave aberration measurement mechanism shown in Fig. 1.Object plane mark 104 in substrate 107 is imaged onto on the image planes mark 103 in substrate 102 by projection objective 101, wherein, object plane mark 104 is identical with image planes mark 103 structures, but image planes mark dimensionally the size based on object lens multiplying power and object plane mark match.Object plane mark in substrate 107 as shown in Figure 7.Each object plane mark is comprised of two sub-marks 701 and 702, and sub-mark 701 is identical with the structure of sub-mark 702, and sub-mark 701 differs 90 degree with the direction of sub-mark 702.Sub-mark 701 forms by identical line markings of many groups cycle with sub-mark 702, as shown in Figure 8.Every group of line markings all comprises 3 lines, and 801,802,803, wherein, lines 801 are identical with the live width of lines 803, and the live width of lines 802 is twices of the live width of lines 801.Lines 801,802,803 are transmission region, and the phase place that sees through the light of these three groups of lines is respectively 0,90,180 degree.As shown in Figure 9, incide incident light 901 in substrate 107 after the diffraction of object plane mark, will form 0 order diffraction light 902 and+1 order diffraction light 903.Figure 10 is two-beam interference pattern.
The interference fringe image that photodetector 108 is received, utilizes certain image processing algorithm can obtain the wave aberration of projection objective.The wave aberration of measuring central point in projection objective visual field of take is example, and mark 701 and 702 adopts respectively 0 degree and 90 to spend and is orientated, and in mark, the live width of lines 801,802,803 can be taken as respectively 32 μ m, 64 μ m, 32 μ m.The multiplying power of projection objective is 0.25, and image planes label size is dwindled 4 times with respect to the size of object plane mark.During measurement, object plane mark is imaged on image planes mark by projection objective, the picture of object plane mark carries the wave aberration of projection objective, the re-diffraction of the image planes mark of process same period, diffraction light forms interference fringe in far field, and interference fringe is received and stores by photelectric receiver, utilizes the interference fringe image storing, through image, process and certain algorithm, can calculate projection objective wave aberration.
When Fig. 5 and Figure 10 have reflected respectively Three-beam Interfere and two-beam interference, interference situation on photelectric receiver, the white portion in Fig. 5 represents Three-beam Interfere, light gray zones domain representation two-beam interference, Dark grey region representation is without interference, and black region is without light intensity.In Figure 10, white portion represents two-beam interference, and Dark grey region representation is without interference, and black region is without light intensity.Compared to Fig. 5, the interference region of Figure 10 is more obvious, can clearly distinguish ，Qie two-beam interference district, two-beam interference region larger compared with Fig. 5.Can, by periodic motive objects concave grating or image planes stop position, adopt the method for phase shift to modulate interference fringe, by obtaining higher wave aberration measuring accuracy after demodulation.
Indicia patterns, except being comprised of a plurality of lines, also can consist of a plurality of square holes of periodically arranging, square hole or diamond hole.
Light source can be the ultraviolets such as mercury lamp or excimer laser, deep ultraviolet, EUV light source.
Can comprise that the mask of the mark of different characteristic size and shape carries out the change of shear distance as described mask by use, thereby improve wave aberration measuring accuracy.Characteristic dimension comprises size, the spacing of each ingredient in mark.
Described in this instructions is several preferred embodiment of the present invention, and above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (11)
1. an object lens wave aberration measurement mechanism, comprising:
Light source;
Object plane mark, its light that can send light source carries out diffraction;
Projection objective, for carrying out imaging to object plane mark;
Image planes mark, its structure is identical with object plane mark, and the size of its size based on object lens multiplying power and object plane mark matches, and object plane mark images on image planes mark by projection objective;
Photodetector, the interference fringe that its re-diffraction light that receives the generation of image planes mark produces in far field;
It is characterized in that, in the order of diffraction of the diffraction light that the light that light source sends obtains after object plane mark diffraction time+1 order diffraction light or-1 order diffraction light disappearance.
2. object lens wave aberration measurement mechanism according to claim 1, is characterized in that described object plane mark consists of lines or the square hole by periodically arranging, square hole, one of them person of diamond hole, consists of respectively.
3. object lens wave aberration measurement mechanism according to claim 2, it is characterized in that object plane mark is comprised of identical line markings of the cycle of organizing more, every group of line markings all comprises the lines of three printing opacities, the position that the ratio of the width of three lines is 1: 2: 1, see through the light of three lines is respectively 0 ° mutually, 90 °, 180 °.
4. object lens wave aberration measurement mechanism according to claim 2, it is characterized in that object plane mark is comprised of identical line markings of the cycle of organizing more, every group of line markings all comprises lines and two light tight lines of two printing opacities, described printing opacity lines and light tight lines interval arrange, the ratio of the width of four lines is 1: 1: 1: the position of the light of 1, four lines is followed successively by 0 °, 0 ° mutually, 0 °, 180 °.
5. according to the object lens wave aberration measurement mechanism described in any one in claim 1～4, it is characterized in that described light source is mercury lamp or excimer laser.
6. according to the object lens wave aberration measurement mechanism described in any one in claim 1～4, it is characterized in that described wave aberration comprises that coma, spherical aberration, astigmatism, three ripples are poor.
7. according to the measuring device for wave aberration of projection objective described in claim 1～6, measure a method for projection objective wave aberration, the method comprises the following steps:
1) utilize projection objective that object plane mark is imaged on image planes mark;
2) utilize image planes mark to carry out re-diffraction to object plane mark imaging, re-diffraction light forms interference fringe in far field;
3) utilize photodetector to receive the pattern of interference fringe;
4) pattern of interference fringe is carried out to data processing and obtain projection objective wave aberration.
8. measuring method according to claim 7, is characterized in that, along the mobile object plane mark periodically of the direction perpendicular to mark, realizing phase shift.
9. measuring method according to claim 8, is characterized in that the phase shift displacement between mark was determined by object plane mark grating cycle and phase shift step number.
10. measuring method according to claim 7, is characterized in that, along the mobile image planes mark periodically of the direction perpendicular to mark, realizing phase shift.
11. measuring methods according to claim 10, is characterized in that the phase shift displacement between mark was determined by object plane mark grating cycle and phase shift step number.
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| US11029611B2 (en) | 2019-07-23 | 2021-06-08 | Shanghai Institute Of Optics And Fine Mechanics, Chinese Academy Of Sciences | Device and method for detecting projection objective wave-front aberration |
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| CN104111161B (en) * | 2013-04-22 | 2017-02-08 | 上海微电子装备有限公司 | Wave aberration measuring device |
| CN104516210B (en) * | 2013-10-08 | 2016-09-28 | 上海微电子装备有限公司 | Telecentric measuring method for photoetching machine lens |
| NL2021358A (en) * | 2018-01-31 | 2018-08-16 | Asml Netherlands Bv | Method and Apparatus for determining optical aberrations |
| CN111352303B (en) * | 2018-12-21 | 2021-06-18 | 上海微电子装备（集团）股份有限公司 | Projection objective wave aberration detection device and method and photoetching machine |
| CN113049224B (en) * | 2019-12-27 | 2023-02-17 | 上海微电子装备（集团）股份有限公司 | Measuring device and measuring method thereof |
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