CN102074196B - Driving circuit of active matrix organic light emitting display and drive method - Google Patents
Driving circuit of active matrix organic light emitting display and drive method Download PDFInfo
- Publication number
- CN102074196B CN102074196B CN2011100232791A CN201110023279A CN102074196B CN 102074196 B CN102074196 B CN 102074196B CN 2011100232791 A CN2011100232791 A CN 2011100232791A CN 201110023279 A CN201110023279 A CN 201110023279A CN 102074196 B CN102074196 B CN 102074196B
- Authority
- CN
- China
- Prior art keywords
- tft
- reverser
- output terminal
- gated sweep
- gate driver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention provides a driving circuit of an active matrix organic light emitting display. The driving circuit is provided with a grid driving circuit, and the grid driving circuit performs grid scanning on a thin film transistor (TFT) panel so as to drive the active matrix organic light emitting display. The driving circuit is characterized in that: the input end of a reverse enabling module is connected with the grid scanning output end of the grid driving circuit, and the output end of the reverse enabling module is connected with the grid scanning line of the TFT panel; and the reverse enabling module comprises a switching module and a reverser, wherein the switching module is used for receiving an external switching signal and responding to the external switching signal so that the grid scanning signal input from the grid scanning output end of the grid driving circuit is directly output or reversed through the reverser and then output.
Description
Technical field
The present invention relates to a kind of active matrix/organic light emitting display (AMOLED) driving circuit and method for designing thereof, especially for P type, N-type switching thin-film transistor (TFT) and the situation of depositing, realize driving chip and share.
Background technology
Organic light emitting display (OLED) is the active illuminating device.Compare present main flow flat panel display Thin Film Transistor-LCD (TFT-LCD), OLED has the advantages such as high-contrast, wide viewing angle, low-power consumption, volume be thinner, being expected to become the flat panel display of future generation after LCD, is one of the maximum technology that receives publicity in the present flat panel display.
In flat panel display, switching TFT commonly used is divided into N-type and P type (such as Fig. 2 A and Fig. 2 B), and wherein the N-type switching TFT is the positive voltage conducting, and negative voltage is closed, and P type TFT is then on the contrary.In addition, the gated sweep signal of driving control chip commonly used generally is divided into positive pulsewidth sweep type or negative pulsewidth sweep type.
At present, the part AMOLED producer gate driver circuit (Gate Driver IC) of directly continuing to use LCD drives the AMOLED display screen.Because the driving circuit of LCD commonly used adopts positive pulsewidth sweep signal raster polar circuit mostly, so if AMOLED producer just uses N-type semiconductor technique, then can directly use; If AMOLED producer uses P-type semiconductor technique, then need circuit is processed especially, cause increasing circuit system cost and complexity.Because the image element circuit structure of each manufacturer differs greatly at present, and making technology is totally different, causes the complete matching of driving circuit design relatively poor, and the cost that customizes separately in this case the grid driving circuit rises, and the cycle of chip development is longer, is unfavorable for determining design proposal.
Drive the sharing nature of chip in order to improve specification of the same race, save the cost of development of custom chip, exist in the art the active matrix/organic light emitting display driving circuit is carried out improved needs.
Summary of the invention
The object of the invention is to solve above-mentioned the problems of the prior art, the active matrix/organic light emitting display driving circuit is improved, realize that P type and N-type TFT technique can share, the change in design dirigibility is provided, saves the custom chip cost of development.
According to purpose of the present invention, a kind of active matrix/organic light emitting display driving circuit is provided, it has gate driver circuit, thereby this gate driver circuit carries out gated sweep to the TFT panel drives this active matrix/organic light emitting display, the present invention has increased a reverse enable module on the basis of existing technology, it is set to input end and links to each other with the gated sweep output terminal of gate driver circuit, and output terminal links to each other with the controlling grid scan line of TFT panel; This reverse enable module comprises a switch module and a reverser, described switch module be used for to receive an external switch signal, and in response to this external switch signal so that directly export or after reverser is reverse, exports from the gated sweep signal of the gated sweep output terminal input of gate driver circuit.By improved AMOLED driving circuit of the present invention, can improve specification of the same race and drive the chip sharing nature, save the custom chip cost of development.The present invention is by using the outside to enable and Trigger Function is selected the way of output, with simply, mode provides the change dirigibility cheaply, realizes the correction to the gated sweep chip of switching TFT.
Preferably, described reverse enable module is integrated in the gate driver circuit.In an alternate embodiment, described reverse enable module is integrated in the TFT panel.
Preferably, described switch module arranges like this, so that when described switching signal is in electronegative potential or the noble potential one, all are directly exported from the gated sweep signal of the gated sweep output terminal input of gate driver circuit, when described switching signal is in electronegative potential or the noble potential another, all from gated sweep signals of the gated sweep output terminal input of gate driver circuit through reverser oppositely after output.
According to purpose of the present invention, a kind of method of improving the active matrix/organic light emitting display driving circuit also is provided, this active matrix/organic light emitting display driving circuit has gate driver circuit, thereby this gate driver circuit carries out gated sweep to the TFT panel drives this active matrix/organic light emitting display, and the method may further comprise the steps: a reverse enable module is provided; The input end of described reverse enable module is linked to each other with the gated sweep output terminal of gate driver circuit, the output terminal of described reverse enable module is linked to each other with the controlling grid scan line of TFT panel; Wherein this reverse enable module comprises a switch module and a reverser, described switch module be used for to receive an external switch signal, and in response to this external switch signal so that directly export or after reverser is reverse, exports from the gated sweep signal of the gated sweep output terminal input of gate driver circuit.
In a preferred embodiment, described switch module is set like this, so that when described switching signal is in electronegative potential or the noble potential one, all are directly exported from the gated sweep signal of the gated sweep output terminal input of gate driver circuit, when described switching signal is in electronegative potential or the noble potential another, all from gated sweep signals of the gated sweep output terminal input of gate driver circuit through reverser oppositely after output.
Description of drawings
Below with reference to accompanying drawing embodiment of the present invention are described, it is exemplary embodiment only, and is intended to not limit the scope of the invention.In the accompanying drawing:
Fig. 1 is a kind of driving configuration diagram of active matrix/organic light emitting display.
Fig. 2 A is a kind of N-type TFT dot structure equivalent circuit diagram of active matrix/organic light emitting display.
Fig. 2 B is a kind of P type TFT dot structure equivalent circuit diagram of active matrix/organic light emitting display.
Fig. 3 A is that N-type TFT dot structure carries out the waveform synoptic diagram that gated sweep is finished 1 frame picture.
Fig. 3 B is that P type TFT dot structure carries out the waveform synoptic diagram that gated sweep is finished 1 frame picture.
Fig. 4 is according to the synoptic diagram of one embodiment of the invention for the reverse enable module that is added on the grid output terminal.
Fig. 5 A is the application legend according to the reverser of one embodiment of the invention, and this reverser can be integrated in the gate driver circuit, also can be integrated on the TFT panel.
Fig. 5 B is the application legend according to the reverser of another embodiment of the present invention, and this reverser can be integrated in the gate driver circuit, also can be integrated on the TFT panel.
Embodiment
Fig. 1 shows a kind of driving configuration diagram of active matrix/organic light emitting display.Have from the signal of interface connector 102 inputs: power supply (VDD), data-signal and control signal.In this embodiment, a kind of signal format of described control signal is electric crystal-resistor capacitor transistor logic (TTL).Power supply (VDD) is through DC-DC transducer 108, step-down is that digital power (DVDD) is used to the digital circuit blocks power supply on the one hand, and this digital power inputs to data drive circuit 112, gate driver circuit 106 and time schedule controller (T/CON) 104 and is its power supply; Boost on the other hand as analog power (AVDD) is used to the analog module power supply, this analog power inputs to gamma circuit (Gamma) 110 and data drive circuit 112 is its power supply.Behind data-signal and the control signal input timing controller 104, produce the control sequential by time schedule controller 104, and will control time series data and be input to gate driver circuit 106.In this embodiment, described control time series data comprises: frame scan start signal (STV) and line-scanning frequency signal (CPV).Then, gate driver circuit 106 is opened the switching TFT M2 (referring to Fig. 2 A and 2B) of every row sub-pixel (Px) in response to STV and CPV that time schedule controller (T/CON) 104 provides.Correspondingly, the horizontal scanning start signal (STH) that data drive circuit 112 provides in response to time schedule controller (T/CON) 104, the control signals such as clock signal (Clk), the digital signal that receives from time schedule controller (T/CON) 104 is converted into simulating signal, and cooperation STV, the signals such as CPV are loaded into aanalogvoltage on the AMOLED sub-pixel (Px), it is inner to store capacitor C (referring to Fig. 2 A and 2B) into, according to this magnitude of voltage height, the conducting degree of TFT M1 (referring to Fig. 2 A and 2B) in the control sub-pixel, reach control OLED brightness, show the purpose of different GTGs.
Fig. 3 A is that N-type TFT dot structure carries out the waveform synoptic diagram that gated sweep is finished 1 frame picture.As shown in Figure 3A, time of 1 frame is divided into n part, each grid G i give a selected time (t1, t2, t3 ..., tn), adopt the mode of lining by line scan.During t1, with positive pulsewidth sweep signal scanning controlling grid scan line G1, make the switch M2 conducting (referring to Fig. 2 A) in this row N-type TFT dot structure, correspondingly the data-signal on the data line is to the conducting degree (not shown in Fig. 3 A) of the charging of the capacitor C in this N-type TFT dot structure and control TFT M1.During t2, controlling grid scan line G1 cuts off the power supply, and the row data signal is kept (keeping the time of a frame); Simultaneously, with positive pulsewidth sweep signal scanning controlling grid scan line G2.By that analogy, finish the driving of 1 frame.Similarly, Fig. 3 B is that P type TFT dot structure carries out the waveform synoptic diagram that gated sweep is finished 1 frame picture, different from Fig. 3 A is, in the situation of P type TFT, scan controlling grid scan line (G1 with negative pulsewidth sweep signal, G2, G3 ..., Gn) so that switch M2 (referring to Fig. 2 B) conducting.
The present invention is directed to the driving method of making the gated sweep shift register at panel, provide a kind of driving chip pins of active matrix/organic light emitting display to P type and the shared scheme of N-type TFT.As shown in Figure 4, the reverse enable module according to one embodiment of the invention is added at the gated sweep output terminal.This reverse enable module comprises a switch module and a reverser 120.This switch module be used for to receive an external switch signal, and in response to this external switch signal so that input signal directly export or export after reverser 120 is reverse.In a preferred embodiment, described switch module consists of (concrete connected mode as shown in Figure 4) by a P type thin film transistor (TFT) and a N-type thin film transistor (TFT), it can be realized: when switching signal was H (noble potential), all grid input signals are output after reverser is reverse; When switching signal was L (electronegative potential), all grid input signals were directly exported.Alternately, those skilled in the art also can be set to by this switch module so that when switching signal is L (electronegative potential), all grid input signals through reverser 120 oppositely after output; When switching signal was H (noble potential), all grid input signals were directly exported.But those of ordinary skills should be understood that this switch module also can realize by other suitable modes in this area.According to above design, can realize the driving sharing nature of P type and two kinds of TFT of N-type.Simultaneously, can reduce cost and the complexity of circuit system.According to one embodiment of the invention, this reverse enable module can be accomplished in the integrated circuit of gate driver circuit 106.Alternately, this reverse enable module also can be accomplished on the TFT panel 114, the input end of this reverse enable module is linked to each other with the gated sweep output terminal, and the output terminal of this reverse enable module links to each other with the controlling grid scan line of TFT switch, with the purpose that realizes that two kinds of gated sweep devices share.
Fig. 5 A shows a preferred embodiment according to reverser of the present invention.This reverser utilizes four P type polycrystalline SiTFT T1, T2, T3, T4 to consist of, and can realize: when input end was noble potential, output terminal was electronegative potential; When output terminal was electronegative potential, output terminal was noble potential.Shown in Fig. 5 A, the drain electrode of the 3rd thin film transistor (TFT) T3 is connected to VGL (Voltage gate Low, it is the electronegative potential that is used to open or close TFT), the grid of the 3rd thin film transistor (TFT) T3 and the connection that is connected, and its source electrode is connected to the grid of the second thin film transistor (TFT) T2 and the 4th thin film transistor (TFT) T4.The drain electrode of the second thin film transistor (TFT) T2 is connected to VGL, and the drain electrode of the source electrode of the second thin film transistor (TFT) T2 and the 4th thin film transistor (TFT) T4 is connected to output terminal jointly.Source electrode and the drain electrode of the 4th thin film transistor (TFT) T4 are joined together, and its source electrode is connected to the drain electrode of the first film transistor T 1.The grid of the first film transistor T 1 is connected to input end, and source electrode is connected to VGH (Voltage gate High, it is the noble potential that is used to open or close TFT).The principle of work of this reverser is: when input end is electronegative potential, and T1 and T3 conducting, the T2 cut-off, T4 (because its drain electrode links to each other with source electrode) is used as electric capacity, and this moment, output terminal was noble potential; When input end is noble potential, the T1 cut-off, T4 is used as electric capacity, T2 and T3 conducting, this moment, output terminal was electronegative potential, thereby reached the purpose of signals reverse.Except above-mentioned negative function, the effect that this reverser also possesses buffering and improves driving force.This reverser can be accomplished 106 li of grid-driving integrated circuits, also can accomplish on the TFT panel 114, to realize the shared problem of P type and two kinds of switching TFT of N-type.
Fig. 5 B shows another preferred embodiment according to reverser of the present invention.This reverser is made of a P type thin film transistor (TFT) T5 and a N-type thin film transistor (TFT) T6, can realize: when input end was noble potential, output terminal was electronegative potential; When output terminal was electronegative potential, output terminal was noble potential.Shown in Fig. 5 B, the grid of thin film transistor (TFT) T5 is connected to input end, and drain electrode is connected to VGH, and source electrode is connected to output terminal; The grid of thin film transistor (TFT) T6 is connected to input end, and drain electrode is connected to output terminal, and source electrode is connected to VGL.The principle of work of this reverser is: when input end is noble potential, and thin film transistor (TFT) T5 cut-off, thin film transistor (TFT) T6 manages conducting, so be output as VGL; When input end is electronegative potential, thin film transistor (TFT) T5 conducting, thin film transistor (TFT) T6 cut-off is so be output as VGH.
However, one of ordinary skill in the art will readily recognize that other suitable reversers commonly used in this area or the device of other suitable realization negative functions also can be used among the present invention, with the purpose that realizes that P type and two kinds of TFT of N-type share.
In addition, it will be understood by those skilled in the art that in the specification and claims " first ", " second " ... " the 6th " only represents the one by one differentiation to a plurality of similar technical characterictics, do not represent to comprise other meanings such as ordering.
Claims (10)
1. active matrix/organic light emitting display driving circuit, it has gate driver circuit, drives this active matrix/organic light emitting display thereby this gate driver circuit carries out gated sweep to the TFT panel, it is characterized in that,
A reverse enable module, it is set to input end and links to each other with the gated sweep output terminal of gate driver circuit, and output terminal links to each other with the controlling grid scan line of TFT panel; This reverse enable module comprises a switch module and a reverser, described switch module be used for to receive an external switch signal, and in response to this external switch signal so that directly export or after reverser is reverse, exports from the gated sweep signal of the gated sweep output terminal input of gate driver circuit.
2. active matrix/organic light emitting display driving circuit according to claim 1 is characterized in that described reverse enable module is integrated in the gate driver circuit.
3. active matrix/organic light emitting display driving circuit according to claim 1 is characterized in that described reverse enable module is integrated in the TFT panel.
4. active matrix/organic light emitting display driving circuit according to claim 1, it is characterized in that described switch module arranges like this, so that when described switching signal is in electronegative potential or the noble potential one, all are directly exported from the gated sweep signal of the gated sweep output terminal input of gate driver circuit, when described switching signal is in electronegative potential or the noble potential another, all from gated sweep signals of the gated sweep output terminal input of gate driver circuit through reverser oppositely after output.
5. active matrix/organic light emitting display driving circuit according to claim 1, it is characterized in that described reverser is made of four P type polycrystalline SiTFTs (T1, T2, T3, T4), wherein: the drain electrode of the 3rd thin film transistor (TFT) (T3) is connected to the electronegative potential (VGL) that is used to open or close TFT, its grid and the connection that is connected, its source electrode are connected to the grid of the second thin film transistor (TFT) (T2) and the 4th thin film transistor (TFT) (T4); The drain electrode of the second thin film transistor (TFT) (T2) is connected to the electronegative potential (VGL) that is used to open or close TFT, and its source electrode is connected to the reverser output terminal; Source electrode and the drain electrode of the 4th thin film transistor (TFT) (T4) are joined together, and its drain electrode is connected to the reverser output terminal, and its source electrode is connected to the drain electrode of the first film transistor (T1); The grid of the first film transistor (T1) is connected to the reverser input end, and its source electrode is connected to the noble potential (VGH) that is used to open or close TFT.
6. active matrix/organic light emitting display driving circuit according to claim 1, it is characterized in that described reverser is made of the 5th thin film transistor (TFT) (T5) of a P type and the 6th thin film transistor (TFT) (T6) of a N-type, wherein: the grid of the 5th thin film transistor (TFT) (T5) is connected to the reverser input end, drain electrode is connected to the noble potential (VGH) that is used to open or close TFT, and source electrode is connected to the reverser output terminal; The grid of the 6th thin film transistor (TFT) (T6) is connected to the reverser input end, and drain electrode is connected to the reverser output terminal, and source electrode is connected to the electronegative potential (VGL) that is used to open or close TFT.
7. method of improving the active matrix/organic light emitting display driving circuit, this active matrix/organic light emitting display driving circuit has gate driver circuit, thereby this gate driver circuit carries out gated sweep to the TFT panel drives this active matrix/organic light emitting display, and the method may further comprise the steps:
A reverse enable module is provided;
The input end of described reverse enable module is linked to each other with the gated sweep output terminal of gate driver circuit, the output terminal of described reverse enable module is linked to each other with the controlling grid scan line of TFT panel;
Wherein this reverse enable module comprises a switch module and a reverser, described switch module be used for to receive an external switch signal, and in response to this external switch signal so that directly export or after reverser is reverse, exports from the gated sweep signal of the gated sweep output terminal input of gate driver circuit.
8. method according to claim 7 is characterized in that: described reverse enable module is integrated in the gate driver circuit.
9. method according to claim 7 is characterized in that: described reverse enable module is integrated in the TFT panel.
10. method according to claim 7, it is characterized in that, described switch module is set like this, so that when described switching signal is in electronegative potential or the noble potential one, all are directly exported from the gated sweep signal of the gated sweep output terminal input of gate driver circuit, when described switching signal is in electronegative potential or the noble potential another, all from gated sweep signals of the gated sweep output terminal input of gate driver circuit through reverser oppositely after output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100232791A CN102074196B (en) | 2011-01-21 | 2011-01-21 | Driving circuit of active matrix organic light emitting display and drive method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100232791A CN102074196B (en) | 2011-01-21 | 2011-01-21 | Driving circuit of active matrix organic light emitting display and drive method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102074196A CN102074196A (en) | 2011-05-25 |
| CN102074196B true CN102074196B (en) | 2013-03-20 |
Family
ID=44032716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100232791A Active CN102074196B (en) | 2011-01-21 | 2011-01-21 | Driving circuit of active matrix organic light emitting display and drive method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102074196B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109410855A (en) * | 2018-11-08 | 2019-03-01 | 惠科股份有限公司 | Display panel and display device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107704136B (en) * | 2017-10-23 | 2020-04-14 | 京东方科技集团股份有限公司 | Organic electroluminescent display panel, touch detection method thereof and display device |
| CN108877729B (en) * | 2018-09-11 | 2021-02-09 | 惠科股份有限公司 | Driving circuit and display device thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101056099A (en) * | 2007-04-13 | 2007-10-17 | 中兴通讯股份有限公司 | Current source start device |
| CN101105918A (en) * | 2006-07-13 | 2008-01-16 | 三菱电机株式会社 | Image display device |
-
2011
- 2011-01-21 CN CN2011100232791A patent/CN102074196B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105918A (en) * | 2006-07-13 | 2008-01-16 | 三菱电机株式会社 | Image display device |
| CN101056099A (en) * | 2007-04-13 | 2007-10-17 | 中兴通讯股份有限公司 | Current source start device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109410855A (en) * | 2018-11-08 | 2019-03-01 | 惠科股份有限公司 | Display panel and display device |
| CN109410855B (en) * | 2018-11-08 | 2020-11-06 | 惠科股份有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102074196A (en) | 2011-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8686990B2 (en) | Scanning signal line drive circuit and display device equipped with same | |
| US10593278B2 (en) | Display device subpixel activation patterns | |
| CN108281116B (en) | Scan driver and display device including the scan driver | |
| CN106104664B (en) | Display device and its driving method | |
| US11227524B2 (en) | Shift register unit and driving method thereof, gate driving circuit and driving method thereof, and display device | |
| CN102708795B (en) | Gate driver on array unit, gate driver on array circuit and display device | |
| US10373575B2 (en) | Display apparatus | |
| CN106782338B (en) | Shift register cell and its driving method, gate driving circuit, display device | |
| CN105139801B (en) | Array base palte horizontal drive circuit, shift register, array base palte and display | |
| CN202196566U (en) | Shift register and grid driving device thereof | |
| US10621938B2 (en) | Drive circuit of a gate drive, driving method thereof and a display device | |
| CN102831860A (en) | Shifting register, drive method thereof, gate driver and display device | |
| CN110390903A (en) | Gate driving circuit and display device | |
| CN103137081A (en) | Display panel gate driving circuit and display screen | |
| CN102831861A (en) | Shifting register, drive method thereof, gate driver and display device | |
| CN103137077B (en) | The method of the stable period of electrophoretic display apparatus and control electrophoretic display apparatus | |
| CN108597430A (en) | Shift register cell, driving method, gate driving circuit and display device | |
| CN108766377B (en) | Display panel and display device | |
| CN110313028A (en) | Signal generating method, signal generating circuit and display device | |
| CN100426112C (en) | Active matrix type LCD device | |
| CN102622982B (en) | Driving method for LCoS display chip and display chip thereof | |
| US10621941B2 (en) | Display device | |
| CN102800281A (en) | Drive method and drive device for optimizing power dissipation of AMOLED panel | |
| CN106997755B (en) | Shift register and its driving method, gate driving circuit, display device | |
| TWI529687B (en) | Driver ic, panel driving system and panel driving method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |