CN102054875A - Power type GaN base Schottky diode and manufacture method thereof - Google Patents
Power type GaN base Schottky diode and manufacture method thereof Download PDFInfo
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Abstract
本发明公开了一种上下电极结构的功率型GaN基肖特基二极管及其制作方法，通过Si衬底剥离技术，实现半导体外延层衬底转移，先将外延薄膜转移到导电、导热性能好的金属衬底上，然后剥离Si衬底，这样既改善了器件的散热性能，也降低了器件的导通电阻；通过在N型GaN层上直接蒸镀欧姆接触或者在半导体外延层中刻蚀通孔、在通孔中蒸镀欧姆接触的技术手段实现器件中电流在上下电极之间的传输。本发明改善了功率型GaN基肖特基二极管散热性能，降低了器件的导通电阻，易于获得大电流，适用于Si衬底GaN外延材料，晶圆尺寸大、成本低，有利于大规模工业生产。
The invention discloses a power-type GaN-based Schottky diode with an upper and lower electrode structure and a manufacturing method thereof. The semiconductor epitaxial layer substrate is transferred by using the Si substrate stripping technology. On the metal substrate, and then peel off the Si substrate, which not only improves the heat dissipation performance of the device, but also reduces the on-resistance of the device; by directly evaporating ohmic contacts on the N-type GaN layer or etching through The technical means of evaporating ohmic contacts in holes and evaporating ohmic contacts in through holes realizes the transmission of current between the upper and lower electrodes in the device. The invention improves the heat dissipation performance of the power-type GaN-based Schottky diode, reduces the on-resistance of the device, and is easy to obtain a large current. It is suitable for GaN epitaxial materials on Si substrates, has large wafer size and low cost, and is beneficial to large-scale industries. Production.
Description
Technical field
The present invention relates to a kind of Schottky diode and preparation method thereof, relate in particular to power-type GaN based schottky diode of a kind of top-bottom electrode structures and preparation method thereof.
Background technology
Schottky diode is the majority carrier device that a kind of rectification characteristic of utilizing metal to contact with semiconductor is carried out work.Compare with diodes such as PN junction, p-i-n, have characteristics such as cut-in voltage is low, reverse recovery current is little, switching speed is fast, low in energy consumption.Develop so far, the Si base device is near theoretical limit.Realize efficient, heat-resisting, withstand voltage and high-power characteristic, need the semiconductor material with wide forbidden band of a new generation to support.
GaN belongs to semiconductor material with wide forbidden band, it has excellent physics and chemical property, big as energy gap, breakdown field strength is high, saturated electron drift velocity is big, thermal conductivity is high and anti-radiation performance is strong, thermal conductivity and dielectric constant are big, chemical characteristic is stable etc., is particularly suitable for making high pressure, high temperature, high frequency, high power, the strong radiation environment semiconductor device of use down.Particularly, the energy gap of GaN is bigger than Si material, and intrinsic carrier concentration is lower than Si, and the working temperature limit that has determined the GaN base device thus is than Si base device height.Consider that from the thermal stability aspect bond energy of III-V compounds of group is bigger than Si material, and higher stability is at high temperature arranged.Simultaneously, the BFOM factor of GaN material (Baliga Figure Of Merit, V
BR 2/ R
On) than Si material height, this means that the GaN Schottky diode has higher puncture voltage and lower on state resistance than Si Schottky diode under the equal conditions.The GaN based schottky diode has benefited from these material behaviors, and is more and more outstanding in the aspect of performance performance.
For the growth of GaN material, it is the key of later stage device architecture design that backing material is selected.GaN self-supporting substrate is a conductivity type homoepitaxy substrate, is the first-selection that realizes high performance device.But the difficulty of GaN self-supporting substrate growth at present, the cost height, and also size is little, is unfavorable for large-scale industrial production.Other heteroepitaxy substrates commonly used have sapphire, carborundum (SiC) and silicon materials such as (Si).Compare with GaN self-supporting substrate, sapphire and Si substrate are cheap, and the size of Si wafer is big, is suitable for large-scale industrial production.The GaN material growth comparative maturity of Sapphire Substrate has the six side symmetrical structures identical with the GaN wurtzite structure, is to use backing material more widely at present.But, large-sized Sapphire Substrate cost height, simultaneously because the poorly conductive of self can not be made electrode, so device generally can only be by making electrode realization transverse conductance in the same way.
Carborundum (SiC) and silicon (Si) backing material can improve its conductivity by the doping of self, can directly directly do electrode on substrate.So carborundum (SiC) and silicon (Si) above the substrate Grown GaN material devices structure can be designed as vertical conductive structure of upper/lower electrode.Make the device of top-bottom electrode structures together for this and backing material, owing to be used for alleviating the conduction loss of the resilient coating of lattice mismatch between the conduction loss of substrate itself and substrate and the GaN epitaxial loayer, can make the conducting resistance of device self increase, influence device performance.
Divide from the current transfer direction, device architecture can be divided into the transverse conductance structure of electrode and vertical conductive structure of upper/lower electrode in the same way.
The transverse conductance structure Schottky diode of electrode is when forward conduction in the same way, electric current along the direction parallel with the device epitaxial planar from the Schottky contacts electrode stream to Ohm contact electrode; When oppositely ending, depletion region also bears reverse voltage in this direction.The transverse conductance structure is not easy to realize the parallel connection encapsulation of a plurality of device cells, and the current transfer conducting region is layer plane on epitaxial loayer only, also is not easy to the heat radiation of device.
The Ohm contact electrode of the conductive structure Schottky diode of upper/lower electrode generally is positioned at the substrate bottom, and electric current transports to bottom electrode along top electrode, and depletion layer is also vertically bearing reverse voltage.Top-bottom electrode structures contrast transverse conductance structure devices, CURRENT DISTRIBUTION is more even, improves heat dispersion.In addition, top-bottom electrode structures is convenient to realize the parallel connection encapsulation of a plurality of device cells.
This shows that compare with the transverse conductance structure, top-bottom electrode structures realizes big current characteristics easily, and certain advantage is also arranged aspect heat dissipation characteristics, and be convenient to realize the parallel connection of a plurality of device cells.But, the GaN self-supporting substrate cost height of the conductive structure device of upper/lower electrode, size is little, and other heteroepitaxy substrates are only both economical, are convenient to the scheme of large-scale industrial production.Therefore, how to solve the difficult point that higher conducting resistance in the heteroepitaxy substrate upper/lower electrode conductive devices becomes technological break-through.
Summary of the invention
Shortcoming at prior art, the purpose of this invention is to provide GaN based schottky diode of a kind of top-bottom electrode structures and preparation method thereof, reduced effectively by contacting and formed the higher conducting resistance that negative electrode brought with conductive substrates, improved the heat dissipation characteristics of Schottky diode, reduced the heat dissipation design requirement.
For achieving the above object, technical scheme of the present invention is: 1) by the substrate desquamation technology, realize the semiconductor epitaxial layers substrate-transfer, earlier the semiconductor epitaxial lamination is transferred on the metal substrate of conduction, good heat conductivity, peel off the Si substrate then, so both improve the heat dispersion of device, also reduced the conducting resistance of device; 2) by on N type GaN layer directly the evaporation ohmic contact or in semiconductor epitaxial layers etching through hole, the technological means of evaporation ohmic contact realizes the current delivery of upper/lower electrode in the device in through hole.
A kind of GaN based schottky diode of the present invention comprises metal substrate and the semiconductor epitaxial lamination by the metal substrate support and connection, and this semiconductor epitaxial lamination comprises N type GaN layer, low-doped GaN layer and schottky metal layer successively by export-oriented metal substrate; Described GaN based schottky diode has top-bottom electrode structures, and metal substrate is with the anode of schottky metal layer as Schottky diode; N type GaN layer (3) has metal electrode as negative electrode.Also be provided with resilient coating between described N type GaN layer and the metal electrode, and metal electrode passes resilient coating as negative electrode.
As a kind of preferred version, be provided with a cylindrical hole and little cylindrical hole in described low-doped GaN layer and the N type GaN layer, described cylindrical hole and little cylindrical hole communicate, the packing material of described cylindrical hole comprises conductive materials, conductive metal layer and insulator successively by the low-doped GaN layer direction of N type GaN course, described conductive materials and conductive metal layer constitute a T shape electric conductor, conductive materials electrically contacts negative electrode as Schottky diode with metal electrode, and insulator connects schottky metal layer.
As further preferred version, described metal electrode is a resilient coating lower surface metals deposited layer, and metal level contacts the negative electrode as Schottky diode with conductive materials formation good ohmic.
As preferred version further, the conductive metal layer in the described T shape electric conductor is connected with insulation dignity, and the linkage interface of conductive metal layer and insulator is arranged in cylindrical hole; Described insulator is the insulating material with conductive metal layer and the isolation of schottky metal layer electricity; The packing material of described T shape electric conductor is metal and/or the alloy that forms ohmic contact with N type GaN layer.
As preferred version further, described metal substrate is Cu or Fe or Au or Cr.
As second kind of preferred version, described metal electrode is for plating the layer of metal layer in the method for N type GaN layer lower surface by evaporation process, with the negative electrode of N type GaN layer as Schottky diode.
As the third preferred version, the semiconductor epitaxial lamination is transferred on the conduction Si substrate, schottky metal layer is connected with conduction Si substrate, utilize the dry etching technology to erode resilient coating, plate the layer of metal layer in the method for N type GaN layer lower surface by evaporation process, with the negative electrode of N type GaN layer as Schottky diode.
The present invention also comprises a kind of preparation method of GaN based schottky diode of top-bottom electrode structures, may further comprise the steps:
A, earlier the Si substrate is cleaned up, in metal organic chemical vapor deposition equipment, grown buffer layer successively, N type GaN layer; Low-doped GaN layer; Stress-buffer layer can be the GaN/AlN superlattice structure of high growth temperature, also can be resilient coatings such as low-temperature epitaxy AlN, or AlGaN component-gradient resilient coating, be used for regulation and control by lattice mismatch, the stress that thermal conductivity mismatch etc. causes, grow low-dislocation-density, high-quality does not have the N type GaN layer of be full of cracks and low-doped GaN layer;
After B, semiconductor epitaxial layers deposition finish, by dry etching, etch a cylindrical hole at low-doped GaN layer and N type GaN layer, the etching depth of this cylindrical hole requires to etch into N type GaN layer;
C, carry out dry etching once more, less cylindrical hole of diameter of etching once more in the figure of etching, the etching depth of this cylindrical hole requires to etch into the Si substrate;
D, in the T shape pore structure that above-mentioned cylindrical hole structure and pillar shape hole form the evaporation conductive materials, by the high annealing alloy, form good Ohmic contact; The ohmic contact that conductive materials forms can be selected Ti/Al/Ni/Au or alloys such as Ti/Al/Ti/Au or Ti/Al/Mo/Au;
E, employing evaporation process plate conductive metal layer on conductive materials, make conductive metal layer cover ohmic contact and play a protective role;
F, adopt depositing technics deposit insulating medium layer on conductive metal layer, make the whole T shape of insulating medium layer complete filling hole; Insulating material can Si0
2Or SiN;
G, adopt evaporation process at insulating medium layer and evaporation schottky metal layer above the non-Doped GaN layer, schottky metal can be selected Ni/Au or alloys such as Pt/Au or Pd/Au;
H, use electric plating method, electroplate metal substrate on schottky metal layer, form and support, the metal substrate material can be metal materials such as Cu, Fe, Au, Cr;
I, employing wet etching fall the Si substrate etching, expose the cathode electrode conductive materials, and encapsulation in parallel forms device.
Compare with existing vertical structure Schottky diode, the present invention adopts Si substrate GaN epitaxial material, and wafer size is big, cost is low, helps large-scale industrial production; Use the substrate desquamation technology, behind the Si substrate desquamation, this structure can realize that cathodic metal directly contacts with the GaN layer, has effectively reduced in the prior art and has formed the high conducting resistance that negative electrode brought by contacting with conductive substrates; Metal substrate has good thermal conduction characteristic, has effectively improved the heat dissipation characteristics of Schottky diode, improves the reliable type of device, has reduced the heat dissipation design requirement.And the Schottky diode structure of upper/lower electrode is easy to realize the parallel connection encapsulation of a plurality of device cells, obtains large current characteristic.
Description of drawings
Fig. 1 is the structural representation of GaN based schottky diode of the present invention;
Fig. 2 is the structural representation of embodiment of the invention 2GaN based schottky diode;
Fig. 3 is the structural representation of embodiment of the invention 3GaN based schottky diode;
Fig. 4 is the structural representation of embodiment of the invention 4GaN based schottky diode;
Fig. 5 A is the process schematic representation of the manufacture method steps A of GaN based schottky diode of the present invention;
Fig. 5 B is the process schematic representation of the manufacture method step B of GaN based schottky diode of the present invention;
Fig. 5 C is the process schematic representation of the manufacture method step C of GaN based schottky diode of the present invention;
Fig. 5 D is the process schematic representation of the manufacture method step D of GaN based schottky diode of the present invention;
Fig. 5 E is the process schematic representation of the manufacture method step e of GaN based schottky diode of the present invention;
Fig. 5 F is the process schematic representation of the manufacture method step F of GaN based schottky diode of the present invention;
Fig. 5 G is the process schematic representation of the manufacture method step G of GaN based schottky diode of the present invention;
Fig. 5 H is the process schematic representation of the manufacture method step H of GaN based schottky diode of the present invention;
Fig. 5 I is the process schematic representation of the manufacture method step I of GaN based schottky diode of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in detail:
As shown in Figure 1, present embodiment has shown the structure of the GaN based schottky diode of the top-bottom electrode structures among the present invention, it comprises: metal substrate 11 and the semiconductor epitaxial lamination by metal substrate 11 support and connection, and this semiconductor epitaxial lamination comprises N type GaN layer 3, low-doped GaN layer 4 and schottky metal layer 10 successively by export-oriented metal substrate 11; Described GaN based schottky diode has top-bottom electrode structures, and metal substrate 11 is with the anode of schottky metal layer 10 as Schottky diode; N type GaN layer 3 has metal electrode as negative electrode.Be provided with resilient coating 2 between N type GaN layer 3 and the metal electrode, and metal electrode passes resilient coating 2 as negative electrode.
Be provided with a cylindrical hole 5 and little cylindrical hole 6 in low-doped GaN layer 4 and the N type GaN layer 3, described cylindrical hole 5 and little cylindrical hole 6 communicate, the packing material of cylindrical hole 5, little cylindrical hole 6 comprises conductive materials 7, conductive metal layer 8 and insulator 9 by N type GaN layer 3 successively to low-doped GaN layer 4 direction, described conductive materials 7 and conductive metal layer 8 constitute a T shape electric conductor, conductive materials 7 electrically contacts negative electrode as Schottky diode with metal electrode, and insulator 9 connects schottky metal layers 10.Conductive metal layer 8 in the T shape electric conductor is connected with 9 of insulators, and conductive metal layer 8 is arranged in cylindrical hole 5 with the linkage interface of insulator 9; Described insulator 9 is the insulating material with conductive metal layer 8 and schottky metal layer 10 electricity isolation; The packing material of described T shape electric conductor is metal and/or the alloy that forms ohmic contact with N type GaN layer 3.
As shown in Figure 2, second kind of structural representation for the GaN based schottky diode of upper/lower electrode conductive structure of the present invention, structure in the present embodiment and embodiment 1 are basic identical, difference is: when wet etching after the substrate Si, at the method for resilient coating 2 lower surfaces by evaporation process, deposit last layer metal level 12, forming good ohmic with conductive materials 7 contacts, together as the negative electrode of Schottky diode, do like this and help current lead-through, and the parallel connection of device encapsulation.
As shown in Figure 3, the third structural representation for the GaN based schottky diode of upper/lower electrode conductive structure of the present invention, structure in the present embodiment and embodiment 1 are basic identical, and the semiconductor epitaxial lamination comprises N type GaN layer 3, low-doped GaN layer 4 and schottky metal layer 10 successively by export-oriented metal substrate 11.Difference is, when wet etching after the substrate Si 1, utilize the dry etching technology, erode stress-buffer layer 2, in the method for lower surface, plate layer of metal layer 12 afterwards by evaporation process, form good ohmic with N type GaN layer 3 and contact, together as the negative electrode of Schottky diode.This kind structural manufacturing process is simple, need not through-hole structure, has simplified technical process.
As shown in Figure 4, be the 4th kind of structural representation of upper/lower electrode conductive structure GaN based schottky diode of the present invention, structure in the present embodiment and embodiment 3 are basic identical.Difference is: in the substrate-transfer process, by wafer bonding techniques (wafer bonding) the semiconductor epitaxial lamination is transferred on the conduction Si substrate 13.Be after the substrate Si 1 of having utilized wet etching, to utilize the dry etching technology equally, erode resilient coating 2, afterwards in the method for lower surface by evaporation process, plate layer of metal layer 12, form good ohmic with N type GaN layer 3 and contact, together as the negative electrode of Schottky diode.
The invention also discloses a kind of manufacture method of GaN based schottky diode of upper/lower electrode conductive structure, Fig. 5 is the process flow diagram of described manufacture method, and its technological process is as follows:
A, shown in Fig. 5 A, earlier Si substrate 1 is cleaned up, in metal organic chemical vapor deposition (MOCVD) equipment, grown buffer layer 2 successively, N type GaN layer 3; Low-doped GaN layer 4;
B, shown in Fig. 5 B, after semiconductor epitaxial layers deposition finishes,, etch a cylindrical hole 5 at low-doped GaN4 layer and N type GaN layer 3 by dry etching, the etching depth of this cylindrical hole requires to etch into N type GaN layer 3;
C, shown in Fig. 5 C, carry out dry etching once more, the less little cylindrical hole 6 of diameter of etching once more in the figure of etching, the etching depth of this cylindrical hole requires to etch into Si substrate 1;
D, shown in Fig. 5 D, evaporation conductive materials 7 in the T shape conductor construction that above-mentioned cylindrical hole 5 and little cylindrical hole 6 forms by the high annealing alloy, forms good Ohmic contact with N type GaN layer 3;
E, shown in Fig. 5 E, adopt evaporation process on conductive materials 7, to plate conductive metal layer 8, make conductive metal layer 8 can cover conductive materials 7 and play a protective role;
F, shown in Fig. 5 F, adopt depositing technics deposit insulating medium layer 9 on conductive metal layer 8, make whole cylindrical hole 5 of insulating medium layer complete filling and little cylindrical hole 6;
G, shown in Fig. 5 G, adopt evaporation process at insulating medium layer 9 and evaporation schottky metal layer 10 above the low-doped GaN layer 4;
H, shown in Fig. 5 H, use electric plating method, on schottky metal layer 10, electroplate metal substrate 11, form and support;
I, shown in Fig. 5 I, adopt wet etching, Si substrate 1 is eroded, expose conductive materials 7, as cathode electrode, encapsulation in parallel forms device with conductive materials 7.
Wherein, resilient coating 2, N type GaN layer 3 and low-doped GaN layer 4 utilize MOCVD equipment to grow on the Si substrate.Resilient coating 2 adopts the GaN/AlN superlattice structure of high growth temperature, or adopts the AlN layer of low-temperature epitaxy.T shape conductive metal layer 8 is arranged in low-doped GaN layer 4 with the linkage interface of insulator 9; Conductive materials 7 adopts Ti/Al/Ni/Au alloy or Ti/Al/Ti/Au alloy or Ti/Al/Mo/Au alloys, through behind the thermal annealing and form ohmic contact between the N type GaN layer 3; Insulator 9 adopts SiO
2Or the SiN material, utilize the depositing technics deposit to form.Schottky metal layer 10 adopts Ni/Au alloy or Pt/Au alloy or Pd/Au alloy, utilizes the method evaporation of electron beam evaporation to form.Metal substrate 11 is selected Cu or metals such as Fe or Au or Cr for use, utilizes electroplating technology to be made, to whole semiconductor laminated playing a supporting role, and with the anode of schottky metal layer 10 as Schottky diode.
Claims (10)
1. power-type GaN based schottky diode, comprise metal substrate (11) and the semiconductor epitaxial lamination by metal substrate (11) support and connection, this semiconductor epitaxial lamination comprises N type GaN layer (3), low-doped GaN layer (4) and schottky metal layer (10) successively by export-oriented metal substrate (11); It is characterized in that described power-type GaN based schottky diode has top-bottom electrode structures, metal substrate (11) is with the anode of schottky metal layer (10) as Schottky diode; N type GaN layer (3) has metal electrode as negative electrode.
2. power-type GaN based schottky diode according to claim 1 is characterized in that, is provided with resilient coating (2) between described N type GaN layer (3) and the metal electrode, and metal electrode passes resilient coating (2) as negative electrode.
3. power-type GaN based schottky diode according to claim 1, it is characterized in that, be provided with a cylindrical hole (5) and little cylindrical hole (6) in described low-doped GaN layer (4) and the N type GaN layer (3), described cylindrical hole (5) and little cylindrical hole (6) communicate, described cylindrical hole (5,6) packing material comprises conductive materials (7) by N type GaN layer (3) successively to low-doped GaN layer (4) direction, conductive metal layer (8) and insulator (9), described conductive materials (7) and conductive metal layer (8) constitute a T shape electric conductor, conductive materials (7) electrically contacts negative electrode as Schottky diode with metal electrode, and insulator (9) connects schottky metal layer (10).
4. according to claim 2 or 3 described power-type GaN based schottky diodes, it is characterized in that, described metal electrode is resilient coating (a 2) lower surface metals deposited layer (12), and metal level (12) contacts the negative electrode as Schottky diode with conductive materials (7) formation good ohmic.
5. power-type GaN based schottky diode according to claim 3, it is characterized in that, conductive metal layer (8) in the described T shape electric conductor is connected with insulator (9) face, and conductive metal layer (8) is arranged in cylindrical hole (5) with the linkage interface of insulator (9); Described insulator (9) is the insulating material with conductive metal layer (8) and the isolation of schottky metal layer (10) electricity; The packing material of described T shape electric conductor is metal and/or the alloy that forms ohmic contact with N type GaN layer (3).
6. power-type GaN based schottky diode according to claim 1, it is characterized in that, metal electrode is for plating layer of metal layer (12) in the method for N type GaN layer (3) lower surface by evaporation process, with the negative electrode of N type GaN layer (3) as Schottky diode.
7. power-type GaN based schottky diode according to claim 1, it is characterized in that, the semiconductor epitaxial lamination is transferred on the conduction Si substrate (13), schottky metal layer (10) is connected with conduction Si substrate (13), plate metal level (12) at N type GaN layer (3) lower surface, with the negative electrode of N type GaN layer (3) as Schottky diode.
8. power-type GaN based schottky diode according to claim 1 is characterized in that, described metal substrate (11) is Cu or Fe or Au or Cr.
9. the manufacture method of a power-type GaN based schottky diode is characterized in that, may further comprise the steps:
A, earlier Si substrate (1) is cleaned up, in metal organic chemical vapor deposition equipment, grown buffer layer (2) successively, N type GaN layer (3) and low-doped GaN layer (4);
After B, semiconductor epitaxial layers deposition finish, by dry etching, etch a cylindrical hole (5) at N type GaN layer, the etching depth of this cylindrical hole requires to etch into N type GaN layer (3);
C, carry out dry etching once more, the less little cylindrical hole (6) of diameter of etching once more in the figure of etching, the etching depth of this cylindrical hole requires to etch into Si substrate (1) always;
D, in the T shape pore structure that above-mentioned cylindrical hole structure (5) and little cylindrical hole (6) form evaporation conductive materials (7), by the high annealing alloy, form ohmic contact with N type GaN layer (3);
E, employing evaporation process plate conductive metal layer (8) on conductive materials (7), make conductive metal layer (8) can cover conductive materials (7) and play a protective role;
F, adopt depositing technics to go up deposit insulating medium layer (9), make whole cylindrical hole structure of insulating medium layer complete filling (5) and little cylindrical hole (6) at conductive metal layer (8);
G, adopt evaporation process at insulating medium layer (9) and evaporation schottky metal layer (10) above the low-doped GaN layer (4);
H, use electro-plating method, on schottky metal layer (10), electroplate and go up metal substrate (11);
I, employing wet etching erode Si substrate (1), expose conductive materials (7), and as conductive cathode, encapsulation in parallel forms device with conductive materials (7).
10. the manufacture method of power-type GaN based schottky diode according to claim 9, it is characterized in that, in the described steps A, resilient coating (2) is GaN/AlN superlattice structure or the low-temperature epitaxy AlN resilient coating or the AlGaN component-gradient resilient coating of high growth temperature, is used to regulate and control the stress that is caused by lattice mismatch and thermal conductivity mismatch; Among the described step D, the conductive materials (7) that forms ohmic contact is Ti/Al/Ni/Au alloy or Ti/Al/Ti/Au alloy or Ti/Al/Mo/Au alloy; Among the described step G, schottky metal layer (10) is Ni/Au alloy or Pt/Au alloy or Pd/Au alloy.
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| CN113871462A (en) * | 2021-08-31 | 2021-12-31 | 中国电子科技集团公司第十三研究所 | GaN vertical Schottky diode and manufacturing method thereof |
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