CN102053173B - Probe guiding member, probe plate and test method of semiconductor device using the guiding member - Google Patents

Abstract

An object of the present invention is to provide a test method for a probe guide, a cantilever probe card, and a semiconductor device that can perform stable electrical connection without leaving scratch marks on the protruding apices of protruding connection electrodes. The present invention solves the above-mentioned problems by providing a probe guide having a linear shape, a cantilever type probe card having such a guide, and a test method of a semiconductor device using such a guide. The guide hole at the side guides the tip of the probe in contact with the protrusion-shaped connection electrode to move in a straight line along its scraping direction during the test. When the connection electrode is positioned at the use position, the guide hole is opened at a position opposite to the peripheral portion of the apex of the protruding connection electrode, the apex peripheral portion being deviated from the centerline of the scraping direction passing through the apex of the protrusion of the protruding connection electrode. .

Description

Test methods for probe guides, probe cards, and semiconductor devices using the same

technical field

The present invention relates to a probe guide used for testing a semiconductor device, a probe card having the probe guide, and a method for testing a semiconductor device using the same.

Background technique

In electrical characteristic tests of semiconductor devices such as BGA (Ball Grid Array) having protruding connection electrodes called bumps, vertical probes that are in vertical contact with the protruding connection electrodes have conventionally been the mainstream. , but when the pitch of connection electrodes is small, or when two probes need to be brought into contact with one connection electrode for Kelvin connection, vertical type probes cannot cope, so cantilever type probes are currently used.

However, since the cantilever-type probe is mounted on the probe board with only one end fixed, its tip is easy to move, especially when it comes into contact with a protruding connection electrode. However, there may be a problem that the tips of the probes slip off from the protruding connection electrodes, and stable electrical connection cannot be obtained.

In order to solve this problem, for example, Patent Document 1 proposes that a probe guide having a through hole whose diameter is smaller than that of the protruding connection is disposed between a semiconductor device to be inspected and a probe card having probes. The planar size of the electrodes is larger than that of the tip of the probe.

However, the through-hole of the guide proposed in Patent Document 1 is a circular through-hole opened to almost the entire surface of the protruding connection electrode, so the tip of the probe does not necessarily have to be guided only to the point where it passes through the through-hole. The direction of scratching when the probe is pushed up (after the probe is in contact with the electrode) may slide sideways within the allowable range of the through hole, making it difficult to obtain a stable electrical connection. shortcoming.

In addition, the through-hole proposed in Patent Document 1 is open to almost the entire surface of the protruding connection electrode including the apex of the protrusion as described above. Therefore, when the tip of the probe is inserted into the through-hole to make contact with the connection electrode, The tip of the probe may come into contact with the apex of the protrusion connected to the electrode, and scratches may be drawn on the apex of the protrusion. The protruding vertex of the protruding connection electrode is the center of the joint part that is bonded to the mounting object on which the connection electrode is mounted. If there is a scratch mark on it, this part will become a hollow and remain in the subsequent fusion, which will become the joint strength. Insufficient, insufficient conductivity and other problems.

prior art literature

patent documents

[Patent Document 1] Japanese Patent Laid-Open No. 2004-335613

Contents of the invention

Problems to be solved by the invention:

The present invention has been made in order to eliminate the above disadvantages, and its object is to provide a probe guide, a cantilever type probe card having such a guide, and a method for testing a semiconductor device using such a guide. The guide can stabilize the electrical connection of the cantilever-type probe to the protruding connection electrode without leaving scratch marks on the protruding apexes of the protruding connection electrode.

means of solving problems

The present invention solves the above-mentioned problems by providing a guide for probes as follows, a cantilever type probe card having such a guide, and a test method for a semiconductor device using such a guide,

A probe guide used when a cantilever-type probe card is used to test a semiconductor device having a protruding connection electrode is provided with a guide hole having a linear side. The tip end portion of the probe contacted by the connecting electrode moves in a linear direction along its scraping direction, and when the probe guide is positioned in the use position relative to the protruding connecting electrode, the guide hole is aligned with the protruding connecting electrode. The opening is at a position opposite to the peripheral portion of the apex, the peripheral portion of the apex deviates from the centerline of the scraping direction passing through the apex of the protrusion of the protruding connection electrode.

According to the probe guide of the present invention, the movement of the tip of the probe is guided in the scraping direction by the linear side of the guide hole, so the tip of the probe does not slip off on the side of the protruding connection electrode. , can achieve a stable electrical connection between the probe and the connecting electrode. In addition, according to the probe guide of the present invention, when the probe guide is positioned at the use position with respect to the protruding connection electrode, the guide hole is opened at a position facing the peripheral portion of the apex of the protruding connection electrode, and the The apex peripheral portion deviates from the centerline of the scraping direction passing through the protruding apex of the protruding connection electrode, so by inserting the probe tip into the guide hole, the probe tip is prevented from coming into contact with the protruding apex of the connection electrode, so there is no Will leave scratch marks on the protruding apex.

In a preferred embodiment of the probe guide according to the present invention, the guide holes are respectively provided on both sides of the center line in the scraping direction passing through the apex of the protrusion of the protrusion-shaped connection electrode. Like this, under the situation that guide holes are respectively provided on both sides of the center line of the protruding connecting electrodes, the probe guide of the present invention can be used for the test that makes each connecting electrode contact with two probes, for example, using Kelvin Connection test.

Furthermore, in a preferred embodiment of the probe guide of the present invention, the guide holes respectively provided on both sides of the central line are arranged in a figure-eight shape, and the straight-line sides between the The interval gradually becomes narrower toward the tip in the scraping direction of the tip of the probe during the test. As a result, the electrical connection between the two probes and the protruding connection electrodes can be made more stable compared to the case where the linear side portions of the guide holes are arranged parallel to each other.

In addition, the semiconductor device as the object of the present invention is not limited to the above-mentioned BGA, as long as it is a semiconductor device with protruding connection electrodes, such as CSP (chip size package), WLCSP (wafer level CSP), flip chip, etc. .

The effect of the invention

With the present invention, stable electrical connection between the cantilever type probe and the protruding connection electrode can be realized. In addition, according to the present invention, since scratch marks are not left on the protruding apexes of the protruding connection electrodes of the semiconductor device to be inspected, insufficient joint strength or insufficient electrical conductivity, etc., will not be caused to the semiconductor device to be inspected. There is a problem with joining with the installation product.

Description of drawings

FIG. 1 is a cross-sectional view showing an example of a cantilever-type probe card of the present invention.

FIG. 2 is a partially enlarged view showing a main part of FIG. 1 .

Fig. 3 is a plan view showing an example of a probe guide.

FIG. 4 is a diagram showing the positional relationship among a protruding connection electrode, a guide hole, and a probe.

Fig. 5 is a diagram showing another example of a probe guide.

Fig. 6 is a plan view showing yet another example of the probe guide.

Symbol Description

1 probe card

2 wiring substrate

3 Reinforcement components

4 Shell

5 top cover

6 boot blocks

7 Probe pressing member

8 probes

9 Test product insertion part

10 Guide pins for positioning

11 Probe guide

12 Orientation adjustment bolt

13 guide hole

14 Semiconductor devices

15 protruding connecting electrodes

16 alignment member

17 protruding apex

18 straight sides

C Centerline.

Detailed ways

Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is of course not limited to the illustrated forms.

FIG. 1 is a cross-sectional view showing an example of a cantilever-type probe card of the present invention. In the figure, 1 is a probe board, 2 is a wiring board, 3 is a reinforcement member, 4 is a casing, 5 is a top cover, 6 is a guide block, 7 is a probe pressing member, 8 is a probe, and 9 is a test Product insertion part, 10 is the positioning pin of positioning. 11 is the probe guide of the present invention, and 12 is an orientation adjustment bolt of the probe guide 11 . The case 4 , the probe guide 11 , and the guide block 6 are positioned at predetermined positions by the guide pins 10 for positioning.

FIG. 2 partially enlarges a main part of FIG. 1 and also shows a part of a semiconductor device to be tested. As shown in FIG. 2, guide holes 13 are provided in the probe guide 11. 14 is a semiconductor device to be tested, and 15 is a protruding connection electrode thereof. 16 is an alignment member for aligning the probe guide 11 with the protruding connection electrode 15 . As shown in the figure, in the probe card 1 of this embodiment, every two probes 8 and guide holes 13 correspond to each protruding connection electrode 15 . In this way, the probe guide 11 corresponding to the two guide holes 13 and one protruding connection electrode 15 is more suitable for example when used in a Kelvin connection type probe card, but it is not necessarily limited to the Kelvin connection type. It is also possible to use the needle in contact with a protruding connecting electrode for normal testing. Also, in the figure, the direction of the probe 8 corresponding to the protruding connection electrode 15 closest to the guide block 6 deviates by 90 degrees from the direction of the probe 8 corresponding to the protruding connection electrode 15 on the left side thereof, so The orientation of the guide hole 13 corresponding to the protruding connection electrode 15 of the guide block 6 is also deviated by 90 degrees from the orientation of the guide hole 13 corresponding to the protruding connection electrode 15 on the left side. In the figure, only two guide holes are shown. One of 13.

Above the semiconductor device 14, there is a push rod and a movable table not shown. During the test, by using the push rod and the movable table, the position of the protruding connection electrode 15 is positioned relative to the probe 8 and the probe. With the guide hole 13 of the guide 11 positioned, the semiconductor device 14 is pressed against the probe card 1 . Of course, the probe card 1 may also be moved relative to the semiconductor device 14 .

In any case, during the test, the probe guide 11 is positioned relative to the protruding connection electrodes 15 of the semiconductor device 14 and the probes 8, and in this positioned state, the guide hole of the probe guide 11 13 is opened at a position opposite to the peripheral portion of the apex deviated from the center line of the wiping direction passing through the apex of the protrusion of each corresponding protrusion-shaped connection electrode 15 . In addition, the tip portions of the probes 8 are positioned to pass through the respective corresponding guide holes 13 .

In FIG. 2 , the tip ends of the probes 8 are in the state of passing through the corresponding guide holes 13, but the probes 8 may also be pressed against the protruding connection electrodes of the semiconductor device 14 in this state, thereby The contact with the protruding connection electrodes 15 may be initially located outside the guide holes 13 , and when the semiconductor device 14 is pressed against the probe card 1 , it passes through the corresponding guide holes 13 to contact the protruding connection electrodes 15 .

The probe guide 11 can be made of, for example, an insulating resin film such as polyimide, and its thickness also depends on the size of the protruding connection electrodes 15, but is usually about 30 to 50 μm.

FIG. 3 is a plan view showing an example of the probe guide 11 . As shown in the figure, two guide holes 13 are respectively provided at positions corresponding to protruding connection electrodes of the semiconductor device on the probe guide 11 .

FIG. 4 is a diagram showing the positional relationship between the protruding connection electrodes 15 , the corresponding guide holes 13 , 13 , and the probes 8 , 8 . In the figure, the arrows indicate the direction in which the probes 8 and 8 slide while contacting the protruding connection electrodes 15 when excessively driven, that is, the wiping direction. As shown in the figure, the guide holes 13, 13 have a long hole shape that is long in the scraping direction, and the length of the guide holes 13, 13 in the scraping direction is longer than the expected sliding amount of the tip of the probe 8, 8. The width in the transverse direction perpendicular to the scraping direction is formed to be longer than the diameter near the tips of the probes 8 , 8 so that the tips of the probes 8 , 8 can pass through the guide holes 13 , 13 .

17 is the protruding apex of the protruding connection electrode 15 , and C is the centerline along the wiping direction passing through the protruding apex 17 . As shown in FIG. 4 , the guide holes 13 , 13 do not open on the centerline C, but open on both sides of the centerline C at positions facing the peripheral portions of the protrusion apexes 7 deviated from the centerline C. Therefore, the tips of the probes 8 , 8 inserted into the guide holes 13 , 13 do not come into contact with the protrusion apex 17 , and thus do not leave scratches on the protrusion apex 17 .

18 is a linear side portion of the guide hole 13 . The side portion 18 is parallel to the wiping direction, so the movement of the tip portion of the probe 8 is guided by this side portion 18 in a linear direction along the wiping direction. Thereby, the tip part of the probe 8 does not slip off from the protruding connection electrode 15, and the stable electrical connection of both is achieved. In addition, in FIG. 4, linear side portions 18 are provided on the left and right sides of the guide hole 13, but since the tip of the probe usually slides away from the center along the inclination of the surface of the protruding connection electrode 15 The outer direction of the line C, therefore, the linear side portion 18 may be provided only on the side farther from the center line C of the guide hole 13 .

FIG. 5 is a diagram showing another example of the probe guide 11 . The probe guide 11 of this figure is the same as the example in FIG. 4 , corresponding to a protruding connection electrode 15, and two guide holes 13, 13 are respectively provided on both sides of the center line C, but the two guide holes 13, 13 It is provided in a figure-eight shape, and the distance between the linear side portions 18, 18 gradually becomes narrower toward the top end in the scraping direction indicated by the arrow. When the movement of the tip of the probe 8 is guided by the linear side portion 18 of the guide hole 13, when the tip of the probe 8 comes into contact with the surface of the protruding connection electrode 15 and slides, it is guided to climb up. Therefore, the contact pressure between the tip of the probe 8 and the protruding connection electrode 15 is increased, and a more stable electrical connection can be realized.

FIG. 6 is a diagram showing another example of the probe guide 11, and is a probe guide used in a test in which one probe is brought into contact with one protruding connection electrode. As shown in the figure, one guide hole 13 corresponds to one protruding connection electrode 15, and only one is provided at a position opposite to the peripheral portion of the apex deviated from the center line C. As shown in FIG. In addition, in the probe guide 11 of this embodiment, the guide hole 13 also has the linear side part 18 which guides the movement of the tip part of the probe 8 in the linear direction along the scraping direction, of course.

When using the above-mentioned probe guide 11 to conduct an electrical characteristic test of a semiconductor device, in addition to interposing the probe guide 11 between the probe 8 and the semiconductor device as the test object, the tip of the probe 8 penetrates the probe. Except that the guide hole 13 of the lead 11 is brought into contact with the protruding connection electrode 15, the same method as the usual test method can be employed. According to the test method of the present invention, the tip of the cantilever-type probe is guided to move linearly in the scraping direction, and the tip and the periphery of the tip are deviated from the centerline of the scraping direction passing through the tip of the protruding connection electrode. Contact to test the electrical characteristics of semiconductor devices with protruding connection electrodes. In addition, the probe guide 11 may be assembled on the probe card 1 or may be separately attached to the test device from the probe card 1 .

Industrial availability

By adopting the probe guide of the present invention, the probe card equipped with the probe guide, and the test method of the present invention, the electrical characteristic test of a semiconductor device having protruding connection electrodes can be performed more stably and reliably. Therefore, there are many It contributes to the improvement of the reliability of semiconductor devices, and has a great possibility of application not only in the industrial field of manufacturing semiconductor devices, but also in other industrial fields using semiconductor devices.

Claims (6)

1. a probe guiding piece, its probe guiding piece used when being and adopting cantilever-type probe plate to test the semiconductor device with overshooting shape connecting electrode, it is characterized in that, be provided with have linearity sidepiece at the bullport scraping on wiping direction long long hole shape, at the trial, described bullport guides the tips of probes portion contacted with overshooting shape connecting electrode to move in the rectilinear direction of scraping wiping direction along it, when described probe guiding piece is positioned in use location relative to overshooting shape connecting electrode, this bullport does not scrape the center line upper shed of wiping direction on the edge on the projection summit by described overshooting shape connecting electrode, but at the position opening relative with the summit periphery departing from described center line, be interspersed in described tips of probes portion in described bullport can not with described projection apexes contact.

2. probe guiding piece as claimed in claim 1, it is characterized in that, described bullport is separately positioned on the both sides of scraping the center line of wiping direction on the projection summit by overshooting shape connecting electrode.

3. probe guiding piece as claimed in claim 2, it is characterized in that, the bullport being separately positioned on the both sides of described center line is set to splayed, and the interval between the sidepiece of described linearity is narrowed gradually along with the top of scraping wiping direction towards tips of probes portion during test.

4. a cantilever-type probe plate, is characterized in that, has as the probe guiding piece in claims 1 to 3 as described in any one.

5. cantilever-type probe plate as claimed in claim 4, it is characterized in that, it is the probe card of the Kelvin's interconnection system making each overshooting shape connecting electrode and two probes touch.

6. one kind has the test method of the semiconductor device of overshooting shape connecting electrode, it is characterized in that, adopt the probe guiding piece described in any one in claims 1 to 3, the top ends of cantilever-type probe is guided to move scraping linearity on wiping direction, and described top ends is contacted with the summit periphery of overshooting shape connecting electrode, carry out the electrical test of semiconductor device, described summit periphery departs from the center line scraping wiping direction on the projection summit by described overshooting shape connecting electrode.