CN102044524B - Interconnection structure and forming method thereof - Google Patents
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- CN102044524B CN102044524B CN200910197091.1A CN200910197091A CN102044524B CN 102044524 B CN102044524 B CN 102044524B CN 200910197091 A CN200910197091 A CN 200910197091A CN 102044524 B CN102044524 B CN 102044524B
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Abstract
The invention discloses a kind of interconnection structure, comprising: semiconductor base; Be positioned at least two the first metal gaskets on described semiconductor base; Needing the first carbon nano-tube between the first metal gasket connected, for being electrically connected described the first metal gasket needing to connect.Interconnection structure formation method comprises step: provide semiconductor base; Described semiconductor base is formed at least two the first metal gaskets; Needing to form the first carbon nano-tube between the first metal gasket connected, for being electrically connected described the first metal gasket needing to connect.The present invention due to the connection cross-section of nanotube minimum, the electric capacity of adjacent two lines is not needing the K value reducing medium to reduce, therefore alternative Low-K medium can be carried out with the common silica with good mechanical strength, also can reduce the transmission delay in interconnection structure, and increase substantially reliability and stability.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of interconnection structure and forming method thereof.
Background technology
Along with the develop rapidly of semiconductor device manufacturing technology, semiconductor device has deep submicron structures.Because the quantity of device contained in integrated circuit constantly increases, the size of device also constantly reduces because of the lifting of integrated level, and the high-performance between device, high density connect not only carries out in single interconnection layer, and will interconnect between multilayer.Therefore, usually provide multilayer interconnect structure, for connecting semiconductor device, wherein multiple interconnection layer is stacking mutually, and interlayer dielectric is placed in therebetween.
In very lagre scale integrated circuit (VLSIC) technique, have the silicon dioxide of thermal stability, moisture resistance to be the predominating insulation used between metal interconnect line, metallic aluminium is then the main material of the metal level of metal interconnect line in chip always.
But, due to the microminiaturization of element and the increase of integrated level, in circuit, metal layer numbers is on the increase, the ghost effect that resistance (R) in interconnection structure and electric capacity (C) produce causes serious transmission delay (RCDelay), along with the reduction of device size, such as at 0.18um, and become the principal element that in circuit, signal transmission speed is limited in more advanced technology.
Therefore, in reduction metal level resistance, because metallic copper has the ability of high-melting-point, low-resistance coefficient and high resistance electron transfer, be widely used in interconnection structure and carried out the material of substituted metal aluminium as the metal level of metal interconnect line.Be such as disclose a kind of conductive plunger and preparation method thereof in the Chinese patent application of " 20071004216.2 " at number of patent application.
In addition, in the electric capacity that will reduce in interconnection structure, because Low-K (low-k) material has smaller capacitive, therefore the dielectric layer that K value (dielectric constant) is lower is adopted in interconnection structure, but because the hardness of Low-K material is little, poor thermal conductivity, therefore this makes the integrated level of the interconnection structure utilizing Low-K material as dielectric layer, reliability and stability are all deteriorated, and therefore makes device there are potential risks.
Fig. 1 is the structural representation of existing a kind of multilayer interconnect structure, with reference to figure 1, comprise and semiconductor base 10 and the first metal pattern layer 16 are provided, the first medium layer 14 that described semiconductor base 10 comprises conductive layer 12 and is positioned on conductive layer 12, has the first metal plug 18 in described first medium layer 14; Described first metal plug 18 is electrically connected the first metal pattern layer 16 on described source/drain/gate and described first medium layer 14; Wherein the first metal pattern layer 16 is metallic copper wire, for being electrically connected the first metal plug 18.
In addition, the first metal pattern layer 16 can also comprise second dielectric layer 20, second dielectric layer 20 has the second metal pattern layer 22, there is in described second dielectric layer 20 second metal plug 24; Described second metal plug 24 is electrically connected described first metal pattern layer 16 and described second metal pattern layer 22; Wherein the second metal pattern layer 22 is metallic copper wire, for being electrically connected the second metal plug 24.
In addition, the second metal pattern layer 22 can also comprise the 3rd dielectric layer 26, the 3rd dielectric layer 26 has the 3rd metal pattern layer 28, in described 3rd dielectric layer 26, there is the 3rd metal plug 30; Described 3rd metal plug 30 is electrically connected described second metal pattern layer 22 and described 3rd metal pattern layer 28; Wherein the 3rd metal pattern layer 28 is metallic copper wire, for being electrically connected the 3rd metal plug 30.Wherein said first medium layer 14, second dielectric layer 20 and the 3rd dielectric layer 26 are all Low-K material.
Therefore prior art Problems existing is: the transmission delay of existing interconnection structure is comparatively large, and reliability and stability are all poor.
Summary of the invention
The technical problem that the present invention solves reduces the transmission delay in interconnection structure.
In order to solve the problem, the invention provides a kind of interconnection structure, comprising:
Semiconductor base;
Be positioned at least two the first metal gaskets on described semiconductor base;
Needing the first carbon nano-tube between the first metal gasket connected, for being electrically connected described the first metal gasket needing to connect.
Optionally, described semiconductor base comprises conductive layer and is positioned at the first medium layer on conductive layer, has the first metal plug in described first medium layer; Described first metal plug is electrically connected described conductive layer and described first metal gasket.
Optionally, also comprise:
Second dielectric layer, is positioned on the first metal gasket and semiconductor base, has the second metal plug in second dielectric layer; For being electrically connected described first metal gasket and the second metal gasket;
At least two the second metal gaskets, are positioned in second dielectric layer;
Second carbon nano-tube, is needing between the second metal gasket connected, for being electrically connected described the second metal gasket needing to connect.
Optionally, also comprise:
3rd dielectric layer, is positioned in the second metal gasket and second dielectric layer, has the 3rd metal plug in the 3rd dielectric layer; For being electrically connected the second metal gasket and the 3rd metal gasket;
At least two the 3rd metal gaskets, are positioned on the 3rd dielectric layer;
3rd carbon nano-tube, is needing between the 3rd metal gasket connected, for being electrically connected described the 3rd metal gasket needing to connect.
Optionally, the material of described first metal gasket, the second metal gasket and the 3rd metal gasket is metallic aluminium.
Optionally, described first metal plug is tungsten plug, and the second metal plug and the 3rd metal plug are copper connector or tungsten plug.
Optionally, described first medium layer and/or second dielectric layer and/or the 3rd dielectric layer are the dielectric material of common dielectric constant or low-k.
Optionally, the material of described first medium layer and/or second dielectric layer and/or the 3rd dielectric layer is silicon dioxide.
Present invention also offers a kind of formation method of interconnection structure accordingly, comprise step:
Semiconductor base is provided;
Described semiconductor base is formed at least two the first metal gaskets;
Needing to form the first carbon nano-tube between the first metal gasket connected, for being electrically connected described the first metal gasket needing to connect.
Optionally, described semiconductor base comprises conductive layer and is positioned at the first medium layer on conductive layer, has the first metal plug in described first medium layer; Described first metal plug is electrically connected described conductive layer and described first metal gasket.
Optionally, also step is comprised:
First metal gasket and semiconductor base form second dielectric layer;
The second metal plug is formed in second dielectric layer;
Described second dielectric layer is formed at least two the second metal gaskets;
Needing to form the second carbon nano-tube between the second metal gasket connected, describedly need connection second metal gasket for being electrically connected.
Optionally, also step is comprised:
Second metal gasket and second dielectric layer form the 3rd dielectric layer;
The 3rd metal plug is formed in the 3rd dielectric layer;
Described 3rd dielectric layer is formed at least two the 3rd metal gaskets;
Needing to form the 3rd carbon nano-tube between the 3rd metal gasket connected, for being electrically connected described 3rd metal gasket needing to connect.
Optionally, the material of described first metal gasket and the second metal gasket is metallic aluminium.
Optionally, described first metal plug is tungsten plug, and the second metal plug is copper connector or tungsten plug.
Optionally, described first medium layer and/or second dielectric layer and/or the 3rd dielectric layer are the dielectric material of common dielectric constant or low-k.
Optionally, the material of described first medium layer and/or second dielectric layer and/or the 3rd dielectric layer is silicon dioxide.
Compared with prior art, the present invention mainly has the following advantages:
The present invention is by changing the structure of the metal pattern layer of electrical connection metal plug, in other words, metallic copper wire is replaced with the interconnection structure of metal gasket and carbon nano-tube, reduce due to the interactional area of wire thus reduce electric capacity in interconnection structure, finally transmission delay obviously reduced.Meanwhile, because the material that can silica etc. be adopted to have good mechanical properties carrys out alternative Low-K material, the reliability and stability of whole interconnection line can be improved.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawing indicates identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on purport of the present invention is shown.
Fig. 1 is the structural representation of existing a kind of multilayer interconnect structure;
Fig. 2 is the structural representation of interconnection structure of the present invention;
Fig. 3 is that interconnection structure of the present invention forms method flow diagram;
Fig. 4 to Fig. 6 is interconnection structure formation method schematic diagram of the present invention.
Embodiment
From background technology, it is comparatively large to there is transmission delay in existing interconnection structure, and the problem that reliability and stability are all poor.
The present inventor proves through a large amount of experimental studies: due to the fragile characteristic of Low-K material, if the K value reducing dielectric layer can make the integrated level of interconnection structure, reliability and stability are all deteriorated.And along with the development of carbon nanotube technology, inventor thinks that employing part metals wire carbon nano-tube replaces to reduce transmission delay greatly in an interconnect structure, and dielectric layer can unnecessary employing Low-K material, so also just avoid the fragility of Low-K material, thus improve reliability and stability.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Fig. 2 is the structural representation of interconnection structure of the present invention, and as shown in Figure 2, interconnection structure, comprising: semiconductor base 110, at least two first metal gaskets 140 and the first carbon nano-tube 130.Wherein, the first metal gasket 140 is positioned on described semiconductor base 110; First carbon nano-tube 130 is needing between the first metal gasket 140 connected, for being electrically connected described the first metal gasket 140 needing to connect.
Wherein, described semiconductor base 110 comprises and has source/drain/gate, and is positioned at the first medium layer 114 on source/drain/gate upper strata, has the first metal plug 116 in described first medium layer 114; Described first metal plug 116 is electrically connected described source/drain/gate and described first metal pattern layer 120.
In addition, can also comprise: second dielectric layer 150, be positioned on the first metal gasket 140, there is in second dielectric layer 150 second metal plug 160; For being electrically connected described first metal gasket 140 and the second metal gasket 180; Second metal gasket 180 is positioned in second dielectric layer 150, and comprises at least two the second metal gaskets 180; Second carbon nano-tube 185, is needing between the second metal gasket 180 connected, for being electrically connected described the second metal gasket 180 needing to connect.Because the needs that circuit connects, the second metal gasket liner had needs conductive interconnection, and some places do not need to connect.
In addition, also comprise: the 3rd dielectric layer 190, be positioned in the second metal gasket 180 and second dielectric layer 150, there is in the 3rd dielectric layer 190 the 3rd metal plug 200; For being electrically connected the second metal gasket 180 and the 3rd metal gasket 220; 3rd metal gasket 220 is positioned on the 3rd dielectric layer 190, and comprises at least two the 3rd metal gaskets 220; 3rd carbon nano-tube 230 is needing between the 3rd metal gasket 220 connected, for being electrically connected described the 3rd metal gasket 220 needing to connect.
Wherein, the material of described first metal gasket 140, second metal gasket 180 and the 3rd metal gasket 220 is metallic aluminium.
Wherein, described first metal plug 116 is tungsten plug, and the second metal plug 160 and the 3rd metal plug 200 are copper connector or tungsten plug.
Preferably, described carbon nano-tube is the carbon nano-tube of individual layer.
Carbon nano-tube has typical stratiform hollow structure feature, and there is certain angle between the synusia of formation carbon nano-tube, the pipe shaft of carbon nano-tube is director circle tubular construction, and great majority are made up of pentagonal section.Pipe shaft is made up of hexagon carbocyclic ring microstructure unit, and terminal cap moiety by the polygonized structure formed containing pentagonal carbocyclic ring, or is called the many wall constructions of polygonal cone.Be a kind of One-dimensional Quantum material with special construction, form the coaxial pipe of several layers to tens of layers primarily of the carbon atom in hexagonal array, keep fixing distance between layers, be about 0.34nm, diameter is generally 2 ~ 20nm.Due to its special structure therefore, carbon nano-tube has high-modulus, high strength, good heat transfer property and good electric conductivity.
Described first medium layer and/or second dielectric layer and/or the 3rd dielectric layer are ordinary dielectric material or low dielectric constant dielectric materials, such as silica.
The present invention due to the connection cross-section of nanotube minimum, the electric capacity of adjacent two lines is not needing the K value reducing medium to reduce, therefore alternative Low-K medium can be carried out with the common silica with good mechanical strength, thus the transmission delay that can reduce in interconnection structure, and improve reliability and stability.Thus, ensure that the performances such as the high strength of interconnection structure, good heat transfer property and good electric conductivity.
The invention provides a kind of formation method of above-mentioned interconnection structure accordingly, Fig. 3 is that interconnection structure of the present invention forms method flow diagram, Fig. 4 to Fig. 6 is interconnection structure formation method schematic diagram of the present invention, is described, comprises step below in conjunction with Fig. 3 to Fig. 6 to the formation method of interconnection structure:
S10: described semiconductor base is provided.
Concrete, with reference to figure 4, semiconductor base 110 can be silicon or the SiGe (SiGe) of monocrystalline, polycrystalline or non crystalline structure, also can be silicon-on-insulator (SOI), other material can also be comprised, such as indium antimonide, lead telluride, indium arsenide, indium phosphide, GaAs or gallium antimonide.Can also be multi layer substrate (such as, there is the silicon substrate of covering dielectric and metal film) in addition, classification substrate, silicon-on-insulator substrate, epitaxial silicon substrate, the substrate (comprising a part for integrated circuit and other elements) of part process, patterning or the substrate that is not patterned.
Semiconductor base 110 comprises the first medium layer 114 on source/drain/gate and source/drain/gate/upper strata.
The material of described first medium layer 114 is selected from SiO usually
2or the SiO of doping
2such as USG (Undopedsiliconglass, do not have adulterate silex glass), BPSG (Borophosphosilicateglass, the silex glass of boron phosphorus doped), BSG (borosilicateglass, the silex glass of doped with boron), PSG (PhosphosilitcateGlass, the silex glass of Doping Phosphorus) etc.The formation method of first medium layer 114 can adopt the method for chemical vapor deposition.
There is the first metal plug 116 in described first medium layer 114.The formation concrete technology condition of described first metal plug 116 comprises:
First, etching first medium layer 114, described etching first medium layer 114 can be any conventional etching techniques, such as chemistry etch techniques or plasma etching technology, and in the present embodiment, using plasma lithographic technique, adopts CF
4, CHF
3, CH
2f
2, CH
3f, C
4f
8or C
5f
8in one or several as reacting gas etching first medium layer 114 until formed and expose conductive layer 112.
The technique of etching first medium layer 114 can be plasma etch process.
Then, plated metal, such as tungsten, reaction temperature is 250 degrees Celsius to 500 degrees Celsius, chamber pressure is 10 millitorr to 18 millitorrs, direct current power is 10000 watts to 40000 watts, and argon flow amount is 2 standard cubic centimeters per minute extremely 20 standard cubic centimeters per minute, fills described contact hole until formed.
Then adopt chemico-mechanical polishing or etching technics, remove unnecessary metal level and first medium layer, form the first metal plug.
S20: form at least two the first metal gaskets on described semiconductor base 110.
Concrete, with reference to figure 5, form the first metal layer on the first metal plug 116 upper strata.Wherein, the formation method of the first metal layer is: plated metal, such as metallic aluminium, reaction temperature is 250 degrees Celsius to 500 degrees Celsius, chamber pressure is 10 millitorr to 18 millitorrs, direct current power is 10000 watts to 40000 watts, and argon flow amount is that 2 standard cubic centimeters per minute are to 20 standard cubic centimeters per minute.
Then adopt chemico-mechanical polishing or etching technics, remove unnecessary the first metal layer, first forms metal gasket, and such as the thickness of the first metal gasket 140 is 200nm, and upper surface area is 200nm × 200nm.
In another embodiment, described first metal pattern layer 120 also can be other metal materials.
S30: needing to form the first carbon nano-tube between the first metal gasket 140 connected, for being electrically connected described the first metal gasket 140 needing to connect.
Concrete, shown in figure 6, this step can utilize method well known to those skilled in the art, such as arc discharge method, laser ablation method, chemical vapour deposition technique (hydrocarbon gas pyrolysismethod), solid-phase pyrolysis, electric glow discharge method and gas combustion method and polymerization reaction synthetic method etc.
Such as adopt arc discharge method, detailed process is: graphite electrode is placed in the reaction vessel being full of helium or argon gas, between the two poles of the earth, inspires electric arc, and now temperature can reach about 4000 degree.Under these conditions, graphite can evaporate, and the product of generation has the carbon nano-tube of fullerene (C60), agraphitic carbon and single wall or many walls.By controlling the hydrogen content in catalyst and container, the fractional yield of several product can be regulated.This method is used to prepare in carbon nanotube technology fairly simple.
Also can adopt chemical vapour deposition technique, or be called hydrocarbon gas pyrolysismethod, this method is the template allowing gaseous hydrocarbon pass through to be attached with catalyst particles, and under the condition of 800 ~ 1200 degree, gaseous hydrocarbon can decompose Formed nanotube.The advantage that this method is outstanding is Residual reactants is gas, and can leave reaction system, obtain the carbon nano-tube that purity is higher, simultaneous temperature does not also need very high, saves energy comparatively speaking.
In addition the methods such as solid-phase pyrolysis, ion or Laser vaporization can also be adopted.
In the present embodiment, concrete using plasma strengthens chemical vapour deposition technique and forms carbon nano-tube.Utilize plasma cavity, provide grounding electrode in the bottom of chamber, provide mover electrode on the top of chamber simultaneously, and connect the radio-frequency power supply of 13.56MHZ.The semiconductor base with the first metal gasket is placed on the grounding electrode of plasma chamber indoor, concrete by the first side joint of the first metal gasket on grounding electrode, the sidewall of the side relative with the first side of the first metal gasket applies extra-fine nickel powder, nickel powder is as catalyst, utilize mass flow controller, make the methane gas of 99.999% purity with in the speed inflow chamber of 30sccm, radio-frequency power supply is opened with the power of 300W, with activated plasma.After plasma is excited, adjustments of gas flow velocity to provide the service area of about 133.3 Pascals, and regulates radio-frequency power supply in 200W running with maintain plasma.Such carbon nano-tube just grows gradually on the sidewall of the first metal gasket, until need the first metal gasket be connected to be connected with another, thus carbon nano-tube just plays the effect of electrical connection between two the first metal gaskets.And carbon nano-tube is owing to having low transmission delay, the material of Low-K therefore can be adopted as the dielectric layer between plain conductor, thus ensure that the performances such as the high strength of interconnection structure, good heat transfer property and good electric conductivity.
Shown in figure 2, one preferred embodiment in, further can also comprise the following steps:
First metal gasket and semiconductor base are formed second dielectric layer 150.
The material of described second dielectric layer 150 is selected from SiO usually
2or the SiO of doping
2such as USG (Undopedsiliconglass, do not have adulterate silex glass), BPSG (Borophosphosilicateglass, the silex glass of boron phosphorus doped), BSG (borosilicateglass, the silex glass of doped with boron), PSG (PhosphosilitcateGlass, the silex glass of Doping Phosphorus) etc.The formation method of second dielectric layer 150 can adopt the method for chemical vapor deposition.
The second metal plug 160 is formed in second dielectric layer 150.Specifically can adopt method well known to those skilled in the art, such as can with reference to the formation method of the first metal plug.
Described second dielectric layer 150 is formed at least two the second metal gaskets 180.Specifically can adopt method well known to those skilled in the art, such as can with reference to the formation method of the first metal gasket.
Needing to form the second carbon nano-tube 185 between the second metal gasket 180 connected, for being electrically connected described the second metal gasket 180 needing to connect.Specifically can adopt method well known to those skilled in the art, such as can with reference to the formation method of the first carbon nano-tube.
Shown in figure 2, one preferred embodiment in, can also further comprise the following steps:
Second metal gasket and second dielectric layer form the 3rd dielectric layer 190, and the material of described second dielectric layer 150 is selected from SiO usually
2or the SiO of doping
2such as USG (Undopedsiliconglass, do not have adulterate silex glass), BPSG (Borophosphosilicateglass, the silex glass of boron phosphorus doped), BSG (borosilicateglass, the silex glass of doped with boron), PSG (PhosphosilitcateGlass, the silex glass of Doping Phosphorus) etc.The formation method of second dielectric layer 150 can adopt the method for chemical vapor deposition.
In the 3rd dielectric layer 190, form the 3rd metal plug 200, specifically can adopt method well known to those skilled in the art, such as can with reference to the formation method of the first metal plug.
Described 3rd dielectric layer 190 forms the 3rd metal gasket 220, specifically can adopt method well known to those skilled in the art, such as can with reference to the formation method of the first metal gasket.
Needing to form the 3rd carbon nano-tube 230 between the 3rd metal gasket 220 connected, for being electrically connected described the 3rd metal gasket 220 needing to connect, such as can with reference to the formation method of the first carbon nano-tube.
Further can also form the 4th metal gasket, the 4th carbon nano-tube, the 5th metal gasket and the 5th carbon nano-tube etc. in addition.
Described first medium layer and/or second dielectric layer and/or the 3rd dielectric layer are ordinary dielectric material or low dielectric constant dielectric materials, such as silica.The present invention due to the connection cross-section of nanotube minimum, the electric capacity of adjacent two lines is not needing the K value reducing medium to reduce, therefore alternative Low-K medium can be carried out with the common silica with good mechanical strength, thus the transmission delay that can reduce in interconnection structure, and improve reliability and stability.Thus, ensure that the performances such as the high strength of interconnection structure, good heat transfer property and good electric conductivity.
The dielectric material of described common dielectric constant refers to that K value is more than or equal to 4 dielectric materials being less than 20 in the present invention, and the dielectric material of low-k refers to the dielectric material that K value is less than 4.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (11)
1. an interconnection structure, is characterized in that, comprising:
Semiconductor base, described semiconductor base comprises first medium layer;
Multiple first metal plug, is arranged in described first medium layer;
At least two discrete the first metal gaskets, be positioned on described first medium layer, described each first metal gasket connects with first corresponding metal plug one end;
First group of carbon nano-tube, comprises many carbon nano-tube, and described carbon nano-tube is the carbon nano-tube of individual layer, connects wherein two the first metal gaskets, and vertical with described first metal plug, and the diameter of the carbon nano-tube of described individual layer is 2 ~ 20nm, wherein, using plasma strengthens chemical vapour deposition technique: utilize plasma cavity, grounding electrode is provided in the bottom of chamber, there is provided mover electrode on the top of chamber simultaneously, and connect the radio-frequency power supply of 13.56MHZ, be placed on the grounding electrode of plasma chamber indoor by first with the first metal gasket, the sidewall of the side relative with the first side of the first metal gasket applies nickel powder as catalyst, utilize mass flow controller, make the methane gas of 99.999% purity with in the speed inflow chamber of 30sccm, radio-frequency power supply is opened with the power of 300W, with activated plasma, after plasma is excited, adjustments of gas flow velocity to provide the service area of 133.3 Pascals, and regulates radio-frequency power supply to operate at 200W with maintain plasma, makes the carbon nano-tube of individual layer connect two the first metal gaskets gradually,
Second dielectric layer, cover described first metal gasket, first group of carbon nano-tube, and second dielectric layer is as the isolation between each carbon nano-tube;
Also be formed with the second metal plug, the second metal gasket and second group of carbon nano-tube successively;
The material of described first metal gasket and the second metal gasket is metallic aluminium, and described first metal plug and the second metal plug are copper connector or tungsten plug, and the material of described first medium layer and second dielectric layer is silicon dioxide.
2. interconnection structure according to claim 1, is characterized in that, also comprises:
3rd dielectric layer, is positioned in the second metal gasket and second dielectric layer, has multiple 3rd metal plug in the 3rd dielectric layer;
At least two the 3rd metal gaskets, are positioned on described 3rd dielectric layer, and described each 3rd metal gasket connects with the 3rd corresponding metal plug one end;
3rd group of carbon nano-tube, comprises many carbon nano-tube, connects wherein two the 3rd metal gaskets, and vertical with the 3rd metal plug.
3. interconnection structure according to claim 2, is characterized in that, the material of described 3rd metal gasket is metallic aluminium.
4. interconnection structure according to claim 2, is characterized in that, the 3rd metal plug is copper connector or tungsten plug.
5. interconnection structure according to claim 2, is characterized in that, described 3rd dielectric layer is the dielectric material of common dielectric constant or low-k.
6. interconnection structure according to claim 2, is characterized in that, the material of described 3rd dielectric layer is silicon dioxide.
7. a formation method for interconnection structure, is characterized in that, comprise step:
There is provided semiconductor base, described semiconductor base comprises first medium layer and is arranged in multiple first metal plugs of described first medium layer;
Described first medium layer is formed at least two the first metal gaskets, and described each first metal gasket connects with first corresponding metal plug one end;
First group of carbon nano-tube is formed wherein between two the first metal gaskets, for connecting this two the first metal gaskets, described first group of carbon nano-tube comprises many carbon nano-tube, described carbon nano-tube is the carbon nano-tube of individual layer, vertical with described first metal plug, the diameter of the carbon nano-tube of described individual layer is 2 ~ 20nm, wherein, using plasma strengthens chemical vapour deposition technique: utilize plasma cavity, grounding electrode is provided in the bottom of chamber, there is provided mover electrode on the top of chamber simultaneously, and connect the radio-frequency power supply of 13.56MHZ, be placed on the grounding electrode of plasma chamber indoor by first with the first metal gasket, the sidewall of the side relative with the first side of the first metal gasket applies nickel powder as catalyst, utilize mass flow controller, make the methane gas of 99.999% purity with in the speed inflow chamber of 30sccm, radio-frequency power supply is opened with the power of 300W, with activated plasma, after plasma is excited, adjustments of gas flow velocity to provide the service area of 133.3 Pascals, and regulates radio-frequency power supply to operate at 200W with maintain plasma, makes the carbon nano-tube of individual layer connect two the first metal gaskets gradually,
First metal gasket and semiconductor base form second dielectric layer, and described second dielectric layer is as the isolation between each carbon nano-tube;
Form the second metal plug as stated above, the second metal gasket and second group of carbon nano-tube;
Wherein, the material of described first metal gasket and the second metal gasket is metallic aluminium, and described first metal plug and the second metal plug are copper connector or tungsten plug, and the material of described first medium layer and second dielectric layer is silicon dioxide.
8. interconnection structure formation method according to claim 7, is characterized in that, also comprise step:
Second metal gasket and second dielectric layer form the 3rd dielectric layer;
The 3rd metal plug is formed in the 3rd dielectric layer;
Described 3rd dielectric layer is formed at least two the 3rd metal gaskets, and described each 3rd metal gasket connects with the 3rd corresponding metal plug one end;
Form the 3rd group of carbon nano-tube between two the 3rd metal gaskets wherein, for connecting this two the 3rd metal gaskets, described 3rd group of carbon nano-tube is vertical with the 3rd metal plug.
9. the formation method of interconnection structure according to claim 8, is characterized in that, described 3rd metal plug is copper connector or tungsten plug and non-carbonic nanotube.
10. the formation method of interconnection structure according to claim 8, is characterized in that, described 3rd dielectric layer is the dielectric material of common dielectric constant or low-k.
The formation method of 11. interconnection structures according to claim 10, is characterized in that, the material of described 3rd dielectric layer is silicon dioxide.
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| CN1797723A (en) * | 2004-12-23 | 2006-07-05 | 北京大学 | Method for fabricating transistor of single electron based on Nano carbon tubes |
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