CN102043325B - Mask graph correcting method and mask manufacturing method - Google Patents
Mask graph correcting method and mask manufacturing method Download PDFInfo
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- CN102043325B CN102043325B CN2009101970894A CN200910197089A CN102043325B CN 102043325 B CN102043325 B CN 102043325B CN 2009101970894 A CN2009101970894 A CN 2009101970894A CN 200910197089 A CN200910197089 A CN 200910197089A CN 102043325 B CN102043325 B CN 102043325B
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Abstract
The invention discloses a mask graph correcting method and a mask manufacturing method. The mask graph correcting method comprises the following steps of: performing optical proximity correction on a graph to be corrected to acquire a corrected graph; acquiring a corresponding process window according to the corrected graph; comparing the process window with a set value; and when the process window is smaller than the set value, repeating the correction on the initial corrected graph till the correction is finished when the process window is greater than or equal to the set value. The method avoids the optical proximity correction on each graph after all the graphs are subjected target reset, simplifies the mask graph correction, saves manpower and time, greatly reduces the correction time and improves the production efficiency.
Description
Technical field
The present invention relates to photoetching technique, especially mask graph bearing calibration and mask method for making.
Background technology
In photoetching process, based on the optical effect of original design figure, go out mask graph and mask graph is proofreaied and correct according to the original design Graphics Design, be a vital step in the photoetching.
Existing mask graph bearing calibration generally includes: proofreaies and correct early stage, the target of all patterns in the design configuration reset, and in the follow-up correction, to the optics neighbour correction of all patterns in the mask graph.Specifically, proofreading and correct early stage, the target of all patterns in the design configuration is reset and can be comprised: at first, rule of thumb value is confirmed the design rule of design configuration; Then; According to design rule; The pairing process window regulated quantity of inquiry design configuration, and according to inquiring about the regulated quantity that is obtained, the design configuration that process window is not met the actual production requirement carries out the target replacement; That is, parameters such as the size of each pattern in the design configuration, quantity, position relation are optimized.
In general; Process window is meant with critical size (CD; Critical Dimension), photoresist loss and side wall angle remain on the following time of prerequisite of setting; The allowed band of pairing depth of focus (DOF, Depth ofFocus) and exposure energy also can be described as the responding ability of technology when depth of focus and exposure energy change.Usually, process window is big more, and the adjustable scope of depth of focus is big more, and the attainable scope of technology is wide more, also just realizes more easily.
For example, prior art can pair be inquired about with the live width and the corresponding process window regulated value of pattern-pitch of original design figure according to rule list, and according to Query Result, dwindles or enlarge the depth of focus of original design figure.With reference to figure 1, for spacing greater than 0.2 micron and be not more than 0.3 micron, live width is greater than 0.3 micron and be not more than 0.4 micron layout, depth of focus that it is corresponding shortens 0.05 micron; And for spacing greater than 0.3 micron and be not more than 0.4 micron, live width is greater than 0.1 micron and be not more than 0.2 micron layout, depth of focus that it is corresponding enlarges 0.05 micron.
After the target of all patterns is reset and is all accomplished in to design configuration,, proofreading and correct the later stage, to the shape, size etc. of definite design configuration, carry out optical near-correction, with the acquisition mask graph.Influence each other owing to exist between pattern and the pattern; Usually need repeated multiple times ground to carry out optical near-correction; Thereby finally obtain mask graph, and make through the pattern in the exposure figure of said mask graph acquisition as much as possible with corresponding consistent through the pattern in the design configuration after the target replacement.
Yet; Along with the raising of semiconductor technology integrated level, especially for 45 nanometers and following process node, the design rule that the replacement of design configuration target is adopted in proofreading and correct in earlier stage receives increasing challenge: at first; These design rules have increasing restrictive condition owing to looking after many-sided situation; Even some design rule is contradiction each other, makes that regular application becomes more and more difficult to these known designs; Secondly; Even can satisfy the restrictive condition of design rule and it is applied; Because setting up of these design rules only considered lithographic equipment and etching condition usually; For example every layer width and spacing etc., and ignored influencing each other between the pattern and pattern in the design configuration, make the follow-up trimming process to become very complicated and consuming time huge to the optical near-correction of each pattern in the mask graph.
In the actual production of current 45 nanometer nodes technologies, the process that accomplish the conventional optical near-correction of a mask graph needs several days usually, even a few week or longer time.And in some cases; Accomplished after the follow-up optical near-correction process all patterns in the mask graph; Even the target that also need carry out the part pattern is again reset and based on this optical near-correction once more; Could obtain exposure result mask graph preferably, the time and the manpower that are spent therebetween are huge.
Summary of the invention
The technical matters that the present invention solves provides a kind of mask graph bearing calibration, has avoided carrying out repeatedly target and has reset and optical near-correction.
For solving the problems of the technologies described above, the invention provides a kind of mask graph bearing calibration, comprising: treat correction graph and carry out optical near-correction, obtain correction graph; According to said correction graph, obtain the process window corresponding with it; Said process window and setting value are compared; When said process window during less than said setting value, said initial calibration figure is repeated above-mentioned correction, until when said process window is greater than or equal to said setting value, proofreaies and correct and accomplish.
Optional, the said correction graph of treating carries out optical near-correction acquisition correction graph, comprising: obtain the optical exposure model; Adopt said optical exposure model, said figure to be corrected is carried out analogue exposure, to obtain the corresponding simulating exposure figure; More said figure to be corrected with and the corresponding simulating exposure figure, and, said figure to be corrected is carried out the single optical near-correction according to said comparative result.
Optional, said process window and setting value are compared also comprises: conditions of exposure and photoetching requirement according to lithographic equipment are provided with setting value.
Optional, said process window is a depth of focus.
Optional, said setting value is 0.15 micron to 0.35 micron.
The present invention also provides a kind of mask method for making of using aforementioned mask figure adjustment method, comprising: use said mask graph bearing calibration the original design figure is proofreaied and correct, obtain mask layout; According to said mask layout, make mask.
Compared with prior art, the present invention has the following advantages:
Through target replacement is in earlier stage combined with follow-up optical near-correction effectively; Make and in the process that each pattern is proofreaied and correct, both considered the process window of each pattern, considered the interaction between each pattern again; Avoided all patterns are carried out again each pattern being carried out optical near-correction after target is reset; Thereby simplified the correction of mask graph, saved great amount of manpower and material resources, practiced thrift production cost; In addition, also significantly reduced correction time, improved production efficiency.
Description of drawings
Fig. 1 is the design rule hoist pennants that is adopted in the bearing calibration of prior art mask graph;
Fig. 2 is the schematic flow sheet of a kind of embodiment of mask figure bearing calibration of the present invention;
Fig. 3 is the schematic flow sheet of a step S1 shown in Figure 2 embodiment;
Fig. 4 uses the original design figure of a kind of embodiment of mask graph bearing calibration of the present invention and the synoptic diagram of analogue exposure figure;
Fig. 5 is the synoptic diagram of various patterns in the mask graph;
Fig. 6 is the synoptic diagram that the focusing-technical chart according to pattern obtains process window;
Fig. 7 is the schematic flow sheet of a step S3 shown in Figure 2 embodiment;
Fig. 8 is the synoptic diagram of using after the conventional optical near-correction that is not aided with the target replacement is proofreaied and correct mask graph as a result;
Fig. 9 is the synoptic diagram of using after the bearing calibration of prior art mask graph is proofreaied and correct mask graph as a result;
Figure 10 is the synoptic diagram as a result after the specific embodiment of application mask graph bearing calibration of the present invention is proofreaied and correct mask graph;
Figure 11 is the schematic flow sheet of a kind of embodiment of mask method for making of the present invention;
Figure 12 is the schematic flow sheet of a step S22 shown in Figure 11 embodiment.
Embodiment
The invention provides a kind of mask graph bearing calibration; In the process that mask graph is proofreaied and correct; Taken into full account getting in touch and influencing each other between each pattern wherein between design configuration and the mask graph; Combine effectively through the target reset process of correction in earlier stage and the optical near-correction process of follow-up correction; Make in trimming process each time, not only considered of the requirement of parameters such as this pattern magnitude, size, also considered influencing each other between this pattern and the adjacent patterns simultaneously process window to each pattern; Simplify elder generation mask graph has been carried out the reset existing trimming process of optical near-correction then and repeated multiple times of target, saved a large amount of manpowers and time.
Below in conjunction with accompanying drawing and specific embodiment, the embodiment of mask graph bearing calibration of the present invention is elaborated.
With reference to figure 2, the invention provides the bearing calibration of a kind of mask figure, comprising:
Step S1 after treating correction graph and carrying out optical near-correction, obtains correction graph;
Step S2 according to said correction graph, obtains the process window corresponding with it;
Step S3 compares said process window and setting value;
When said process window during less than said setting value, said correction graph is repeated the correction of above-mentioned steps S1 to step S3, when the process window that obtains until working as is greater than or equal to said setting value, proofreaies and correct and accomplish.
Wherein, the optical near-correction among the step S1 only is meant each pattern carried out the single optical near-correction,, and need not proofread and correct repeatedly to obtain the best calibration result of this pattern each pattern as said correction graph with the correcting result that obtained.
In a kind of embodiment, with reference to figure 3, step S1 can comprise:
Step S101 obtains the optical exposure model;
Step S102 adopts said optical exposure model, and said figure to be corrected is carried out analogue exposure, to obtain the corresponding simulating exposure figure;
Step S103, more said figure to be corrected with and the corresponding simulating exposure figure, and, said figure to be corrected is carried out the single optical near-correction according to said comparative result.
Specifically, in the lump with reference to figure 3 and Fig. 4.At first, execution in step S101, according to the actual process condition, for example parameters such as the kind of litho machine, numerical aperture, and optical principle obtain the optical exposure model.
Then, execution in step 102 according to the optical exposure model that step S101 is obtained, is at first treated correction graph 401 and is carried out the simulated optical exposure, obtains corresponding simulating exposure figure 402.Analogue exposure figure 402 has reflected under the actual process condition, treats the figure that correction graph 401 makes public and obtained.Owing to have the diffraction of light effect, have distortion and deviation between analogue exposure figure 402 and the figure to be corrected 401; Especially at the contiguous each other position of pattern, the aliasing behind this exposure imaging becomes more and more serious.For example, in zone 403 and zone 404, owing to the effect of optics in the actual manufacturing process and chemical effect, the turning can passivation become round, and the area that interior angle increases makes that the interior angle passivation is more serious, and in addition, turning change fenestra has influenced the critical size D of figure.
Be the approaching as much as possible figure to be corrected of the figure that exposure is obtained; So execution in step S103; More said figure to be corrected and with its corresponding simulating exposure figure, and said figure to be corrected is carried out the single optical near-correction according to said comparative result.Wherein, said single optical near-correction is meant, adopts optical adjacent correction method, all patterns in the said figure to be corrected is once proofreaied and correct, and need not be proofreaied and correct repeatedly to obtain best correcting result each pattern.Specifically, said optical near-correction can adopt multiple correcting modes such as for example adding auxiliary pattern, and the concrete optical adjacent correction method that adopts does not cause restriction to inventive concept of the present invention.
In a kind of embodiment, can be according to the relation of the position between the pattern, each pattern of treating in the correction graph is proofreaied and correct.Specifically, the optical effect of each pattern or its ingredient is not only relevant with himself shape, also receives the restriction in its peripheral pattern or space.
With reference to figure 5, strip pattern can be divided into intensity (dense) pattern 501, stand alone (iso) pattern 503 and the marginal semi pattern 502 of pattern-pitch according to its spacing size.Wherein, in these three kinds of patterns, the distance between the intensive pattern 501 is minimum, and the spacing between the stand alone pattern 503 is maximum.For iso pattern 503, it does not receive the influence of proximity effect, but distortion can the loss because of exposure energy appear in its edge; And for dense pattern 501 and semi pattern 502, particularly the dense pattern 501, and the inhomogeneous meeting of proximity effect and exposure energy is to influencing line size and forbidding the optical space cycle (pitch).Correspondingly, for the optical near-correction of dense pattern 501, can increase its width; And, can reduce the size at its edge for the optical near-correction of iso pattern 503.
In addition; Also can pass through to add auxiliary patterns at pattern periphery to be corrected, or the angle of rotating pattern to be corrected, or the correcting modes such as position of mobile pattern to be corrected; Treat the single optical near-correction of each pattern in the correction graph with completion, obtain said correction graph.
Next, execution in step S2.Specifically, can adopt rectangle or ellipse on focusing-exposure figure to represent process window, its transverse axis span is represented the allowed band of depth of focus, and its longitudinal axis span is represented the allowed band of exposure energy.
In a kind of embodiment,, at first can obtain its each self-corresponding two focusing-technical charts respectively according to the variation range accepted of critical size in dense pattern and the iso pattern with reference to figure 6; Zone 601 between pairing upper limit focusing-technical chart 603 of dense pattern and the pairing lower limit focusing-technical chart 604 of iso pattern is and can makes exposure energy and the focal depth range that dense pattern and iso pattern can both exposure imaging.Then, in zone 601,, confirm process window 602 according to exposure energy that sets in the technological requirement and exposure tolerance; Wherein, determined process window 602 can satisfy following condition: the number percent that the difference of the exposure energy E1 that the exposure energy E0 that its central point A is corresponding is corresponding with process window 602 upper edges accounts for E0 is said exposure tolerance.Wherein, said process window can be the value of depth of focus.
In other embodiments, also can adopt other mode to obtain process window; For example, in actual process, can be through measuring the variation of process conditions, the for example variation of exposure energy and exposure focal plane, and the change of live width, thus process window is calculated.
Obtain after the process window execution in step S3.
Specifically, with reference to figure 7, step S3 can comprise:
Step S301 is provided with setting value.Usually can said setting value be provided with according to the conditions of exposure and the photoetching requirement of lithographic equipment.For example, when said process window adopts said depth of focus to represent, can said setting value be set to 0.15 micron.
Step S302, the size of more said setting value and said process window; When said process window during, proofread and correct and accomplish more than or equal to said setting value; And, said correction graph is repeated the correction of step S1 to step S3 when said process window during less than said setting value, accomplish until proofreading and correct.
In a kind of specific embodiment, according to litho machine and other process conditions, it is 0.15 micron technological requirement that mask graph to be corrected need meet depth of focus.With reference to figure 8 to Figure 10, wherein, only adopt conventional optical near-correction and be not aided with target reset mask graph proofreaied and correct after, the depth of focus of the pattern that is obtained and the distribution schematic diagram of respective amount can be with reference to figure 8; Adopt prior art, in promptly proofreading and correct early stage mask graph carried out that target is reset and the later stage proofread and correct in the figure of counterweight postpone carry out optical near-correction, the depth of focus of the pattern that is obtained and the distribution schematic diagram of respective amount can be with reference to figure 9; And the distribution schematic diagram of the depth of focus of the pattern that specific embodiment obtained of employing mask graph bearing calibration of the present invention and respective amount can be with reference to Figure 10.
In Fig. 8 to Figure 10, ordinate is expressed as the corresponding number of patterns of depth of focus condition, and horizontal ordinate is expressed as depth of focus.With reference to figure 8, adopt and not carry out that target is reset and after only through the method for conventional optical near-correction all patterns in the mask graph being proofreaied and correct, the focal depth range of most of pattern can't satisfy technological requirement all less than 0.05 micron; With reference to figure 9, adopt the bearing calibration of prior art mask graph to proofread and correct after, focal depth range that can the implementation part pattern is not less than 0.15 micron, yet, still have the many patterns of quantity can't reach desired focal depth range; With reference to Figure 10; After the employing specific embodiment of the invention is proofreaied and correct this mask graph; The focal depth range of all patterns can both reach 0.15 micron or more than, make that all patterns can both be under the process conditions that provided, by exposure imaging; Thereby enlarged process window, guaranteed that the exposure of original design figure realizes.
In addition, with reference to Figure 11, based on aforementioned mask figure adjustment method, the present invention also provides a kind of mask method for making, comprising: step S21, and use said mask graph bearing calibration the original design figure is proofreaied and correct, obtain mask layout; Step S22 according to said mask layout, makes mask.
Wherein, step S22 can adopt existing any mask method for making.For example, with reference to Figure 12, in a kind of embodiment, step S22 can comprise:
Step S221, the silicon chip clean; Specifically, the available concentrated sulphuric acid boils, so that the slice, thin piece cleaning surfaces, and, make silicon chip surface dry, thereby ability and photoresist adhere to well through deionized water rinsing and oven dry.
Step S222 coats silicon chip surface equably with photoresist.
Step S223 carries out preceding baking to silicon chip, so that solvent evaporates wherein; For example, can be under 80-110 ℃ with silicon chip before baking 5-10 minute.
Step S224 according to said mask layout, selects exposure to silicon chip; Those skilled in the art can adopt existing exposure system and exposure light according to actual production and designing requirement, according to said mask layout silicon chip are made public, and selected exposure system and exposure light do not impact the present invention's design.
Step S225 develops, and promptly optionally removes photoresist.
Step S226, the evaporation of metal layer that occurs on the corrosion photoresist layer.
Step S227 removes photoresist; Specifically, can adopt the concentrated sulphuric acid to boil, the glue-line charing is come off, water flushing then.
With respect to prior art; The above-mentioned embodiment of the present invention is through combine the target reset process of proofreading and correct early stage in the prior art and the optical near-correction process of follow-up correction effectively; Make and in the process that each pattern is proofreaied and correct, both considered the process window of each pattern, considered the interaction between each pattern again; Avoided to all patterns carry out that target is reset and optical near-correction after also need repeat to such an extent that carry out target once more and reset and optical near-correction; Thereby simplified the correction of mask graph, saved great amount of manpower and material resources, practiced thrift production cost; In addition, also significantly reduced correction time, improved production efficiency.
Though the present invention through the preferred embodiment explanation as above, these preferred embodiments are not in order to limit the present invention.Those skilled in the art is not breaking away from the spirit and scope of the present invention, should have the ability various corrections and additional are made in this preferred embodiment, and therefore, protection scope of the present invention is as the criterion with the scope of claims.
Claims (5)
1. mask graph bearing calibration comprises:
Step S1 treats correction graph and carries out optical near-correction, obtains correction graph;
Step S2 according to said correction graph, obtains the process window corresponding with it;
Step S3, more said process window and setting value;
When said process window during less than said setting value, said correction graph is repeated the correction of above-mentioned steps S1 to step S3, until when said process window is greater than or equal to said setting value, proofread and correct completion;
Said step S1 comprises:
Obtain the optical exposure model;
Adopt said optical exposure model, said figure to be corrected is carried out analogue exposure, to obtain the corresponding simulating exposure figure;
More said figure to be corrected with and the corresponding simulating exposure figure; And according to comparative result; Said figure to be corrected is carried out the single optical near-correction; The said single optical near-correction that carries out is meant the employing optical adjacent correction method, and all patterns in the said figure to be corrected are once proofreaied and correct.
2. mask graph bearing calibration as claimed in claim 1 is characterized in that, said step S3 comprises:
Conditions of exposure and photoetching requirement according to lithographic equipment are provided with setting value.
3. mask graph bearing calibration as claimed in claim 1 is characterized in that, said process window is a depth of focus.
4. mask graph bearing calibration as claimed in claim 3 is characterized in that, said setting value is 0.15 micron to 0.35 micron.
5. the mask method for making of each mask graph bearing calibration among application such as the claim 1-4 comprises:
Use said mask graph bearing calibration the original design figure is proofreaied and correct, obtain mask layout;
According to said mask layout, make mask.
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| CN2009101970894A CN102043325B (en) | 2009-10-13 | 2009-10-13 | Mask graph correcting method and mask manufacturing method |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103631085B (en) * | 2012-08-29 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | The bearing calibration of optical proximity correction model |
| CN104570584B (en) * | 2013-10-16 | 2019-06-28 | 中芯国际集成电路制造(上海)有限公司 | A kind of OPC modification method of notch line end |
| CN104090468B (en) * | 2014-07-31 | 2019-10-22 | 上海华力微电子有限公司 | Expose the optimization method of secondary graphics |
| CN106033170B (en) * | 2015-03-10 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | Optical adjacent correction method |
| CN104898367A (en) * | 2015-05-15 | 2015-09-09 | 上海集成电路研发中心有限公司 | Optical proximity correction method for improving through-hole process window |
| CN109085736A (en) * | 2018-09-10 | 2018-12-25 | 德淮半导体有限公司 | The production method of optical adjacent correction method and mask plate |
| CN113050366B (en) * | 2019-12-27 | 2024-05-17 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and system, mask, equipment and storage medium |
| CN113325667A (en) * | 2021-01-26 | 2021-08-31 | 上海先进半导体制造有限公司 | Method, device, equipment and medium for adding sub-resolution graph |
| CN115047707A (en) * | 2021-03-09 | 2022-09-13 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method and system, mask, equipment and storage medium |
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| CN101246313A (en) * | 2007-02-13 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Optical short distance amending method |
| CN101297390A (en) * | 2005-09-13 | 2008-10-29 | 朗明科技公司 | Systems, masks, and methods for photolithography |
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| CN101297390A (en) * | 2005-09-13 | 2008-10-29 | 朗明科技公司 | Systems, masks, and methods for photolithography |
| CN101246313A (en) * | 2007-02-13 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Optical short distance amending method |
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