CN102037371A - Enhancement of detection of defects on display panels using front lighting - Google Patents
Enhancement of detection of defects on display panels using front lighting Download PDFInfo
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Abstract
Front-side illumination apparatus and methods are provided to enable, in general, detection of a-Si residue defects at the array test step well before the cell step. A-Si has high resistivity without exposure to light making it difficult to detect in conventional TFT-array test procedures. On the other hand, when the a-Si residue is illuminated with a light, its resistivity decreases, which, in turn, changes the electrical properties of the TFT array cell, which may be detected using the voltage imaging optical system (VIOS). In one implementation, the TFT array cell is exposed to illuminating light pulses, impacting the top side of the TFT panel during the testing performed using the VIOS. In one implementation, the front side illumination is traveling along the same path as the illumination used for voltage imaging in the VIOS. In another implementation, light source(s) for front side illumination are located in the close proximity to the VIOS modulator.
Description
The cross reference of related application
The application is based on the U.S. Provisional Patent Application NO.61/055 that submitted on May 21st, 2008, and 031, and require the rights and interests of its right of priority under 35U.S.C 119, incorporate its whole disclosures by reference at this.
Technical field
The present invention relates to detect the defective in the flat-panel monitor, more specifically, relate to and utilize frontside illuminated (front side illumination) to detect the interior defective of flat-panel monitor.
Background technology
In the manufacture process of dull and stereotyped liquid crystal (LC) display, the thin glass plate of big light is used as the substrate of deposit film transistor (TFT) array.Usually, some independently tft array are included in the glass lined base plate, and are commonly called the TFT panel.Replacedly, thin film transistor (or AMLCD) is contained the transistor that utilizes each pixel or sub-pixel place or this class display of diode, and therefore this glass lined base plate also can be described as the AMLCD panel.Also can utilize organic LED (OLED) fabrication techniques flat-panel monitor, although and make on glass typically, also can on the plastic lining base plate, make.
Carry out TFT pattern (pattern) deposition in a plurality of stages, wherein in each stage, on the top of before layer (or glass), deposit certain material (for example metal, tin indium oxide (indium tin oxide according to predetermined pattern; ITO), crystalline silicon, amorphous silicon etc.).Each stage typically comprises a plurality of steps, for example deposition, mask, etching, peels off etc.
In each step during each stage in these stages and in each stage, many production defectives may occur, these defectives will influence the electrical property and/or the optical property of final LCD product.These defectives include but not limited to metal protuberance (protrusion) 110, the ITO projection 114 in the metal 116, so-called breach (mouse bite) 118, the open circuit 120 among the ITO 112, short circuit 122, the foreign particles 126 in the transistor 124, and the residue under the pixel 128, as shown in Figure 1.Amorphous silicon under the pixel (a-Si) residue 128 may cause because of undercut (under-etching) or photoetching (lithography) problem.Other defective comprises mask problems, crosses etching (over etching) etc.
Although the TFT depositing operation is strictly controlled, defective be unavoidable.This has limited output capacity and has influenced production cost unfriendly.Typically, after the depositing operation step of key, utilize optical check (AOI) system of one or more robotizations to check tft array, and utilize the electrical-optical checking machine (for example by California, USA 95138 San Jose, the Photon Dynamics company (Orbotech company) of 5970 Optical Court is produced, and also is called array test instrument or array testing technologies instrument (array checker; AC)) test the tft array of finishing.
The a-Si defective is the defective of special trouble, and this is because it is to photaesthesia; That is to say that a-Si shows as insulator in dark state; But, then show as conductor when it is exposed to the light time.In fact, its electrical sheet resistance (sheet resistance) R
SiAs the function of light intensity and reduce.Fig. 4 illustrates this dependence.Electrical sheet resistance means thus in change the dependence of light intensity and is exposed under the situation of degree of light, and the variation of the pixel voltage that causes because of defective also can change.Therefore, if do not detect defective before final FPD assembling is finished, then the final user will be easy to notice this defective, and this is that it is exposed to the backlight of display because when in normal FPD operating period.Therefore, exist strong motivation to detect such defective.
Regrettably, routine techniques fails to provide a kind of appropriate method that forms the a-Si residue of defective on the LCD panel that is used for detecting effectively during each stage of panel manufacturing.
Summary of the invention
The inventive method is at following method and system, and it can essence eliminates one or more the problems referred to above and the other problems that is associated with the detection of a-Si residue of formation defective in the LCD panel display.
A kind of system of defective of the panel that is used for detecting test is provided according to the present invention on the one hand.This system incorporates the frontside illuminated subsystem into, is configured to transmit the frontside illuminated light beam to the panel of test.This frontside illuminated light beam has the ability that the electrical characteristics that change these defectives are beneficial to detect this defective.This system also incorporates detection subsystem into, is configured to detect defective based on the electrical characteristics that changed of defective.Used frontside illuminated light beam is carried out optimization by chopping and its duration and intensity in this system, so that the detection of defective maximization and make the minimized detection of false defect.In addition, this frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of defective.
According to the present invention on the other hand, a kind of system of defective of the panel that is used for detecting test is provided.This system incorporates the frontside illuminated subsystem into, is configured to transmit the frontside illuminated light beam to the panel of this test.This frontside illuminated light beam has the ability that the electrical characteristics that change defective are beneficial to detect defective.This system also incorporates detection subsystem into, is configured to detect defective based on the electrical characteristics of the change of defective.This aforementioned detection subsystem comprises the voltage imaging optical devices, is configured to create the image that the space voltage of the panel of this test of indication distributes.Detect the defective in the panel of test based on the image of creating.In this system, the frontside illuminated subsystem is integrated in the optical path of voltage imaging optical devices.In addition, the frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of defective.
According to the present invention on the other hand, a kind of system of defective of the panel that is used for detecting test is provided.This system incorporates the frontside illuminated subsystem into, is configured to transmit the frontside illuminated light beam to the panel of this test.The frontside illuminated light beam has the ability that the electrical characteristics that change defective are beneficial to detect defective.This system also incorporates detection subsystem into, is configured to detect defective based on the electrical characteristics that changed of defective.Aforesaid detection subsystem comprises the voltage imaging optical devices, is configured to create the image that the space voltage of the panel of this test of indication distributes.Detect the defective in the panel of test based on the image of creating.Aforesaid frontside illuminated subsystem is disposed in outside the optical path of these voltage imaging optical devices.In addition, this frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of defective.
Additional aspect related to the present invention will partly mention in hereinafter describing, and will be in part apparent according to this description, perhaps can know by putting into practice the present invention.Aspect of the present invention can be by hereinafter describing in detail and the combination of element that claims are specifically noted and various element and aspect realizes and obtains.
Should be understood that it only is exemplary and illustrative above reaching following description, is not the present invention or its application that is intended to requirement for restriction protection by any way.
Description of drawings
That incorporate in this manual and constitute its a part of accompanying drawing illustration embodiments of the invention, and describe one with this and be used from and explain and the principle of explanation the technology of the present invention.Particularly:
Fig. 1 illustrates various acyclic defectives in the top view with part of the medium of the big flat patterning of transistor array periodically.
Fig. 2 illustrates the exemplary sectional view of amorphous silicon residue.
Fig. 3 illustrates the exemplary equivalent circuit diagram of a-Si residue with respect to the TFT pixel.
Fig. 4 is the dependent sampling curve map of electrical sheet resistance for lambda1-wavelength.
Fig. 5 is dual wavelength irradiation unit (the dual wavelength illuminator according to the embodiment of the present invention's design; DWI) illustrative diagram.
Fig. 6 is modulator seat irradiation unit (the modulatormount illuminator of another embodiment of design according to the present invention; MMI) illustrative diagram.
Fig. 7 diagram is used to detect the exemplary schematic block diagram of the system of the present invention of the defective in the flat-panel monitor.
Fig. 8 is the exemplary graph of the typical absorption curve of expression amorphous silicon.
Fig. 9 is the example of possible preceding sidelight and pattern of pixels driver timing diagram.
Figure 10 is another example of possible front side light pattern, and wherein the pulse for each frame of given driving pattern is different.
Figure 11 A and Figure 11 B are following in the situation of zero-time that changes pulse and pulse strength, as the flaw detection sensitivity (DDS) of the function of front side light pulse concluding time and the figure of signal to noise ratio (snr).
Embodiment
In the following detailed description, with reference to (a plurality of) accompanying drawing, wherein the key element of identical function is with designated identical label.Above-mentioned accompanying drawing is to illustrate mode but not limiting mode illustrates specific embodiment consistent with the principle of the invention and embodiment.These embodiments are carried out fully and describe in detail, so that those skilled in the art can implement the present invention, and should be understood that and also can utilize other embodiment and can make structural variation and/or alternative, and do not deviate from scope of the present invention and spirit various key elements.Therefore, should not explain the following detailed description with the implication of restriction.In addition, can implement described various embodiment of the present invention with the form of the combination of the hardware of special use or software and hardware.
Those skilled in the art also will understand, the array test instrument can be by utilization as at for example United States Patent (USP) 4,983,911,5,097,201 and 5,124, voltage imaging proving installation and method described in 635, with the defective in the identification LC display, these United States Patent (USP)s are incorporated its full content with way of reference at this.Utilize specific pattern incoming call to drive pixel in the LC display, for example, as at United States Patent (USP) 5,235,272 and 5,459, described in 410, be incorporated herein by reference in its entirety.Because the LC display is made of pel array, so when electricity drives the LC display, may aspect electric, show differently with some pixel that defective is associated, thereby can utilize the voltage imaging sensor and the image processing software that is associated detects such difference with normal pixel.By utilizing the combination of different driving pattern, deducibility goes out the type and the position of the illustrated many defectives of Fig. 1.
Yet, in the array test that utilizes the standard array method of testing, be very difficult to detect the defect pixel that has a-Si residue 128 under the ITO.The cut-open view of the example of the TFT pixel 200 with a-Si defective shown in Figure 2.On glass plate 202, form TFT dot structure 200.Gate insulator 204 is placed on glass, then can apply data wire lines 206, then the pixel characteristic of deposit transparent conductive material (for example tin indium oxide (ITO) 210) form.At last, deposit passivation layer, for example silicon nitride (silicon nitride; SiNx) 208.Amorphous silicon or data metal residue 212 may keep, and are represented as the extension of the line feature (line feature) that falls into subsequently under the ITO layer with graphics mode.The overlapping region 214 that residue 212 and pixel (ITO) are 210 forms the capacitor 216 with stray capacitance Cp.
Fig. 3 is the isoboles of the a-Si residue under the pixel.In this case:
C
p=k
SiN* ε
0* Area
Residue/ d
Gate SiNEquation 1
C
St=k
SiN* ε
0* W
PixelW
St/ d
PassSiNEquation 2
Wherein, C
pBe stray capacitance, K
SiNBe the electric medium constant of SiN, ε
0Be airborne specific inductive capacity (permittivity constant), W
PixelBe the width of pixel, and W
StBe that (electric capacity is C for the width of reservior capacitor
St), d
PassSiNAnd d
Gate SiNBe respectively passivation layer and gate pole thickness to the SiN layer, and Area
ResidueIt is the area of the residue defective discussed.
In array test, apply driving voltage to the LC plate, and can be observed pixel response by the voltage imaging sensor.For for example defective of data metal residue and a-Si and so on, just can use-bear (PN) to drive pattern, wherein data voltage dropped to negative value before Image Acquisition.In this pattern, the decline of data voltage causes the voltage drop that has on the overlapping pixel of ITO-data line.If it is Δ V that this data voltage falls
d, then Δ V falls in pixel voltage
pCan be expressed as following formula:
Wherein, C
pBe the overlapping stray capacitance of ITO-data line residue, C
StBe the electric capacity of reservior capacitor, and R
SiIt is the electrical sheet resistance of amorphous silicon.
In addition, yet, because size-dependent (equation 1) so may even be exposed under the situation of light, also possibly can't detect very little a-Si defective.
Although utilize AOI can find some a-Si defective, and can utilize the normal defect detection technique, use AC to detect some defective, but can't pick out the larger proportion in these defectives in early days, and can only after the assembling of TFT-LCD unit has been finished, after the LC plate has been divided into panel and has been assembled into module, can be detected really.In unit testing, backlight module is provided for the light source of the TFT-LCD plate of display image when being driven by electricity.The photaesthesia characteristic of a-Si makes it may detect this defective under these conditions.Yet, being desirably in the unit number of assembling steps and capturing these defectives really before, and more preferably be in the array checking procedure, to capture these defectives, this is because use laser repair system can relatively easily remove residue.In addition, detect at the commitment of manufacturing process and before the unit assembling that these defectives have been saved and packaging technology and with the related cost of required color filter glassy phase.
LCD array inspection machine does not generally have external light source, thereby the detection of a-Si residue may be very difficult.It is backlight that the array test instrument of the AC47xx product line of being made by Photon Dynamics company (being purchased by Orbotech Ltd.) comprises the short wavelength, this short wavelength is backlight to be to be used in combination with the transparent chuck (chuck) of split axle type system (split axis-type system), wherein Examination region and therefore this chuck be limited in single modulator capable (row).Yet, cover in the door frame type system (gantry type system) of whole glass size at chuck, what also needs are associated is backlight with by (for example moving, single line) or statically (for example, cover fully) cover the size of whole glass, thus may be both unrealistic also not cost-effective.
Cover some situation of the gate metal among the TFT for a-Si residue wherein, backlightly can't pass this gate features, thereby be difficult to detect the a-Si residue on the grid.Have in the pixel design of redundant TFT at some, particularly, isolated by electricity and be not connected in these situations of pixel at redundant TFT, this is frequent defective.When a-Si residue bridge joint pixel TFT and redundant TFT, it influences performance, thereby is regarded as defective.The a-Si residue increases C
Gd(gate-to-drain stray capacitance).Because gate-to-drain capacitor-coupled effect, when gate turn-off, pixel voltage reduces (voltage swing: Δ V
g).This is called as recoil effect (kick-back effect).Δ V falls in pixel voltage
pCan be expressed as:
ΔV
p＝ΔV
g*C
gd/(C
gd+C
st+C
lc)。[equation 4]
Wherein, C
LcBe cell capacitance (existing only in the unit drives situation).The a-Si residue that pixel TFT is connected on the grid of redundant TFT has increased gate-to-drain electric capacity, and this has increased pixel voltage again and has fallen.
Other non-voltage imaging array test instrument for example utilizes the tester of electron beam, can by with the electrospray defective, then electronics is accumulated in to detect the a-Si residue in this defect area.This of electronics gathers increases the a-Si conductance, makes the formation method that is associated can detect defective.
The embodiment one of according to the present invention, the frontside illuminated device and method is provided,, in the array test step, can detects a-Si residue defective so that usually really before unit step, particularly, detect a-Si residue on the gate insulator of tft array unit.It will be understood by those skilled in the art that under the situation that is not exposed to light, a-Si has high resistivity in the tft array test.On the other hand, when a-Si residue during by rayed, its resistivity will reduce, this changes the electrical characteristics of tft array unit then, this can utilize voltage imaging optical system (VIOS) to detect, this optical system is for example by California, USA 95138 San Jose, the voltage imaging optical system that the Photon Dynamics company (Orbotech company) of 5970 Optical Court is produced.The example embodiment of such system is specified in aforesaid U.S. Patent 4,983, and in 911,5,097,201 and 5,124,635, these United States Patent (USP)s are incorporated its full content with way of reference at this.Correspondingly, in one embodiment of this invention, the tft array unit is exposed in the irradiation of light pulse, at the test period that utilizes VIOS to carry out, the top side of influence (impact) this TFT panel.
According to an embodiment, this frontside illuminated is to advance along the path identical with the irradiation that is used for voltage imaging in VIOS.In one embodiment, in the red part of visible wavelength region, carry out the VIOS irradiation.In one embodiment, the exemplary optical wavelength is 630nm.According to another embodiment, this frontside illuminated comprises one or both wavelength, and transmits in the periphery of the voltage video modulator of VIOS.
In one of the present invention embodiment,, realize to the top side of flat plate array tester or the embodiment of frontside illuminated according to VIOS proving installation and function thereof.This causes the cost savings of overall test macro and efficient to improve, and this is because some assemblies of VOIS post both had been used for frontside illuminated, also is used for the VIOS imaging.Particularly, because of the ability that detects interested defective (a-Si) is the function of light intensity, so the frontside illuminated of this TFT unit must be suitably evenly and in interested surveyed area, can repeat.In addition, be used for detecting the irradiation of a-Si and optical devices and must not disturb the VIOS tester to search the function of other type flaw that the TFT unit may occur, wherein some defective is set forth in above.
In one of the present invention embodiment, providing a kind of is configured in the system that produces during the LCD array test the frontside illuminated of the LCD structure on the panel of test, purpose is to be beneficial to and detects the sensitization manufacturing defect, and for example the structure of LCD pixel (for example grid structure or be attached to data line) goes up remaining a-Si residue.In one embodiment of system of the present invention, be different from the front side of the rayed panel of the light wavelength that in VIOS, is used for voltage imaging with wavelength.Do For several reasons at least like this.At first, used light may have and not allow the wavelength that detects a-Si residue and/or other sensitization defective effectively in VIOS irradiation.The second, the design of VIOS modulator makes the light that is used for voltage imaging among the VIOS almost completely by the film of aforementioned modulator (pellicle) reflection, thereby can not arrive this panel.Correspondingly, choose the light that is used for frontside illuminated and make the electrical characteristics of its activation (change) a-Si residue and by this film transmission.
At last, total system comprises that light that (utilizing the difference of aforementioned each optical wavelength) is used to separate these two light beams and prevents to be used for frontside illuminated disturbs the parts (low-pass filter 510 shown in Figure 5) of VIOS imaging.
The figure of the example embodiment of expression dual wavelength optical irradiation system 500 of the present invention in Fig. 5.This exemplary plot only supplies to be used for the illustration purpose, and should not be regarded as limiting by any way the present invention's scope.As shown in Figure 5, for be used in combination based on check of the array of voltage imaging optical system (VIOS) and test macro, dual wavelength irradiation unit (DWI) 512 is placed in the optical column of VIOS irradiation unit.The structure of this VIOS irradiation unit is for example at United States Patent (USP) 5,124, is described in 635, incorporates the full content of this United States Patent (USP) at this.
As shown in Figure 5, the blue light 504 that dual wavelength irradiation unit 512 is produced blue light illumination device 502 (for example, wavelength with 455nm, the a-Si defective is especially responsive to this wavelength) be coupled to and the identical optical path of the visible light 505 that is produced by the red light irradiation device 501 that is used for the defective imaging (for example wavelength is 630nm).Particularly, Fig. 8 illustrates the typical light absorption curve 801 of a-Si, and the light (802) that its indication has wavelength 455nm has the highest absorption coefficient for a-Si.
The coupling of two light beams of aforementioned different wave length in dual wavelength irradiation unit 512 by utilizing dichronic mirror (beam splitter) 503 to realize, dichronic mirror 503 essence transmits blue bundles 504 are essence reflection Red light beams 505 also, have the beam combination of two wavelength with generation.As the coupling that it will be understood by those skilled in the art that light beams of different wavelengths can realize that wherein some mode will be described with reference to other embodiments of the invention hereinafter by many alternate manners.Therefore, the specific design of dual wavelength irradiation unit 512 shown in Figure 5 should not be regarded as limiting by any way.
Forward system shown in Figure 5 to, after passing dichronic mirror (beam splitter) 503, the blueness of conllinear and red beam are reflected by beam splitter 506 and pass lens subassembly 507, and desired irradiation distribution patterns on the panel 509 that lens subassembly 507 realizes optical modulators 508 and test is provided.
As mentioned above, in various other or alternate embodiments of the present invention, can realize the dual wavelength conllinear irradiation of the panel 509 of modulators 508 and test by some different modes.For example, in one embodiment, can adopt multi-wave length illuminating diode (LED), wherein can limit the wavelength of these multi-wavelength diodes and select.In this kind configuration, only need adopt an irradiation unit that utilizes this aforementioned multi-wave length illuminating diode to replace for example light source 502, can from this irradiation system, remove secondary light source 501 and dichronic mirror 503 simultaneously.
In another alternate embodiment, can replace in the single light source of light source 502 can be used for equally, single wavelength red LED is spatially interspersed among with single wavelength blue LED.Equally, in this kind configuration, need in this irradiation system, remove secondary light source 501 and dichronic mirror 503.Yet, it should be noted that the uniformity coefficient of this irradiation may be damaged to some extent in this configuration of the LED that intersperses that utilizes two different wave lengths.
In one embodiment, VIOS modulator 508 is equipped with film 515, and film 515 is positioned at the surface of the modulator 508 of the tested LCD structure of the panel of network topology testing spatially.Film 515 have special selection make ruddiness that irradiation unit 501 produced just by its reflection and the blue light that irradiation unit 502 is produced just by the optical characteristics of film 515 transmissions.Modulator 508 is based on the Potential Distribution on the end face (Fig. 5) of panel 509 of test, the intensity of the ruddiness that modulation film 515 reflect, and wherein Ce Shi panel 509 is placed the film that spatially is close to modulator 508.After by the film reflection, modulated ruddiness passes lens subassembly 507, beam splitter 506 and low-pass filter 510.After passing wave filter 510, the ruddiness of reflection bump (impinge) is on the photo-sensitive cell of CCD device 511, and this photo-sensitive cell is used to create the image of the panel of test.For any blue light that prevents to be used to shine the a-Si residue disturbs the ccd image sensor 511 of VIOS, CCD device 511 is equipped with low-pass filter 510.This wave filter has the blue light and allow the optical transmission property that this ruddiness passes undampedly of being designed to significantly decay.This can prevent the image that the blue light of frontside illuminated arrives CCD device 511 and disturbs the electromotive force on the end face of panel 509 of the test of being created.It should be noted that in one of the present invention embodiment, this blue light only is used to change the electrical characteristics of this a-Si residue,, and do not produce the image of defective itself so that it is easier to be detected by for example VIOS.
Utilize the lip-deep tested LCD structure of the panel 509 of 513 pairs of tests of voltage source to apply bias voltage, and utilize the end face 516 (Fig. 5) of 514 pairs of modulators 508 of voltage source to apply bias voltage.In one of the present invention embodiment, all optical modules of this system all are equipped with suitable optical coating, to carry out best transmittance and reflection.The irradiation uniformity coefficient of light (blue and red) that it should be noted that two wavelength is similar, and typically in one of the present invention embodiment, poorer unlike approximate 25%.The scope of typical irradiation uniformity coefficient is between 10% and 15%.Therefore, dual wavelength irradiation design of the present invention shown in Figure 5 and configuration allow with the most responsive wavelength illumination a-Si defective of a-Si defective, but do not reduce or the function of interference voltage imaging test (VIOS) hardware.
It should be noted that the panel that only the invention is not restricted to ruddiness and this modulator of blue light illumination and this test.As the skilled person will appreciate, can select another irradiates light wavelength to realize appropriate absorption by the a-Si residue, so that change its electrical characteristics fully, and reduce frontside illuminated to the VIOS operation interference of (it is used for creating the voltage distribution patterns again on the panel of test) so that can detect.
According to second alternate embodiment of the illustrated dual wavelength of the present invention irradiation of Fig. 6 design, and, annular irradiation unit 601 is incorporated in the modulator seat 600 also in order to be used in combination with array check and test macro based on VIOS.Annular irradiation unit 601 is installed on the modulator 508, and single wavelength (wavelength of blueness or approximate 455nm) light source 603 (for example a plurality of LED) is positioned at the optical path of VIOS irradiation unit in addition to prevent that image from cutting.Among first embodiment as described in the preceding, the light of the film (not shown) transmit blue of modulator 508 and reflection Red irradiation unit 501 visible wavelength that produces, it is that the function of voltage imaging modulator 508 is required.Light source 603 is created irradiation pattern 604.In example embodiment of the present invention, 4 LED 603 of each side carrying of installing ring 601.Yet, it will be understood by those skilled in the art that the LED that can utilize any other the suitable quantity that separates in any appropriate mode on installing ring 601 realizes desired intensity and irradiation uniformity coefficient.Therefore, the invention is not restricted to irradiation unit ring 601, modulator seat 600 and light source 603 shown in arrange.In the present invention's various embodiment, irradiation unit ring 601 has square, rectangle, octagon, circle, ellipse or other suitable shape.The light that light source 603 is produced passes modulator 602, and the front side of the panel of irradiation test, so that influence the electrical characteristics of a-Si residue on the panel of this test.
As the skilled person will appreciate, depend on the area size of modulator 508, in some cases, particularly when the quantity of LED 603 relatively hour, the dual wavelength irradiation unit (DWI) described with reference Fig. 5 compares, and may more be difficult to realize the good homogeneous degree in the present embodiment.Yet,, the quantity of LED 603 is increased to every side is beneficial to realization bigger irradiation uniformity coefficient and uniformity characteristic more than 10 (altogether more than 40) with comparing that the embodiment of the described dual wavelength irradiation unit (DWI) of reference Fig. 5 can realize.For the best uniformity coefficient in the modulator region gamut, must control the emission angle of LED.As known in the art, some LED has lambert (Lambertian) emission profile (profile), thereby launch with very big solid angle, this is unfavorable for realizing the expectation target of high irradiation uniformity coefficient, this is because more light unevenly is sent to the central authorities of modulator.Exist some alternative solutions to can be used for overcoming this deficiency.In one embodiment, utilize special a plurality of directed LED as light source 603 and guide its irradiation modulator 508 innermost part.
In an alternate embodiment, add collimation lens (collimating lens) or preferably with its optical coupled to each Universal LED, to comprise the expansion of lambert's profile.The whole bag of tricks that is used for collimation lens is coupled to optically LED is well known in the art.In one embodiment, each LED is equipped with the collimation lens of himself.These collimation lenses help strengthening the uniformity coefficient of frontside illuminated.In another embodiment, apply directional attenuation by adding neutral density filter (neutral density filter) in the LED side.In addition, can use diffuser: (1) eliminates the spatial non-uniformity of each LED; And (2) improve the TBI uniformity coefficient that combination LED distributes.For example, in one embodiment, can utilize by Luminit (the Physical Optics Corporation company) manufacturing of California, USA Torrance and the diffuser of selling.
In one embodiment, can use the beam-shaping diffuser of the oval radiation profiles of generation to improve the frontside illuminated uniformity coefficient.In identical or different embodiment, also can be by utilizing bendingof light or turning film to improve the frontside illuminated uniformity coefficient.
The major advantage of multiple light courcess shown in Fig. 6 configuration is that in existing door frame type system to renovate (retrofit) will be more easy and cheap to forming thing, wherein the panel 509 lip-deep a-Si residues to test provide the light source 603 of frontside illuminated to be installed on the independent installing ring, this installing ring be disposed in modulator 508 on the dual wavelength irradiation system of Fig. 5 near, wherein secondary light source is integrated in the VIOS post self.In addition, the inventive concept illustrated in Fig. 6 need can be applicable to the defect detecting technique (for example based on the detecting device of electron beam, and may be the full-contact test instrument probe) of evenly peripheral irradiation.Yet, it should be noted that as previously described, electron beam not with the blue ray radiation compatibility.
It will be understood by those skilled in the art that can be by being different from the system configuration that all multimodes embodiment illustrated in fig. 6 realize being used to provide near frontside illuminated (arranging light source being included in modulator).Therefore, the particular design of irradiation system shown in Figure 6 should not be regarded as limiting by any way.
Fig. 7 diagram is used to detect the exemplary schematic block diagram of the system 700 of the defective in the flat-panel monitor, and it adopts one of embodiment that the present invention conceives.The present invention's system incorporates VIOS 702 into, and it comprises dual wavelength irradiation unit 703, and the exemplary embodiment of dual wavelength irradiation unit 703 is described (element 512) in the above with reference to Fig. 5.The light beam of first wavelength that irradiation unit 703 is produced (for example blue light) is directed to the LCD panel 701 that is installed on the glass supporter.The light beam of second wavelength that irradiation unit 703 is produced (for example red visible light) is directed on the modulator 705, modulator 705 operatively is used for being transformed into the spatial modulation light signal, the film (not shown) reflection of this optical signals modulator 705 via the electric field that electrical-optical sensor (modulator) will bear on the LCD panel of test of bias voltage.The light of reflection is focused on the CCD device 711 by lens combination 704, is created the image in zone of the LCD panel of test with the ruddiness of reflection by CCD device 711, and the image of being created is just being indicated Potential Distribution on the panel 701 of test.Example system 700 can further comprise Image Acquisition/Flame Image Process PC 709, it is configured to receive view data, utilize institute's view data that receives to produce the image of panel of test and the LCD unit that image that processing is produced has defective with identification from CCD device 711, comprises the position of such defective unit on the panel of testing.The positional information that can write down these defectives is for further processing, for example to proofread and correct the defective that is detected.
In one embodiment of this invention, VIOS 702 is installed in movably on the X/Y/Z platform assembly 706, and X/Y/Z platform assembly 706 can be mobile down in platform/IO control module 707 controls.In the present invention's embodiment, be installed on the same X/Y/Z platform 706 more than a VIOS 702, make and utilizing different VIOS 702 to check the zones of different of the panel of this test simultaneously.
At last, arrange test signal pattern generator 710,, trigger and provide the required modulator that is biased into the control irradiation unit so that the LCD panel of driving voltage pattern to test to be provided.
It should be noted that in the present invention's embodiment, the frontside illuminated system can be fully integrated in the VIOS subsystem, and be subjected to the restriction of above-mentioned detection technique never in any form that it provides optimum absorption efficiency and radiation uniformity coefficient.The illustrated front side of Fig. 6 rayed technology is also applicable to the detection system based on electron beam.Yet the radiation uniformity coefficient is for mentioned above and should be especially good in the design of the illustrated dual wavelength irradiation unit of Fig. 5, wherein is used for blue light that a-Si activates and follows identical optical path with main VIOS irradiates light arrival modulator.
In a specific embodiment of the present invention, frontside illuminated is by chopping, and its duration and intensity are carried out and optimize so that with respect to the photosensitive defects detection maximization of TFT pixel.Particularly, frontside illuminated light has the wavelength that the absorption maximum optical characteristics with photosensitive defective is complementary.In one embodiment, utilize wavelength to be used for the frontside illuminated of a-Si residue less than the blue light of 470nm.
In the present invention's embodiment, at the front side optical efficiency of optimum, select to be used to increase the wavelength of the conductance of amorphous silicon residue, so that the absorption characteristic of itself and material is complementary.Typically, a-Si has absorbing boundary (edge) in low wavelength (blue light) scope, referring to the curve among Fig. 8 801.For bigger wavelength (more low-yield), absorbability sharply descends, and for short wavelength, absorbability does not then more or less change.It should be noted that based on the use of the defects detection of electron beam and blue light incompatiblely, this is owing to introduce significant noisiness at its secondary (secondary) electronic detectors that are used for measuring pixel voltage.There are two reasons in this.At first, short wavelength's photon (for example blue light) has bigger energy than the photon with red wavelength, therefore can produce more unwanted noise signal when it hits the required scintillater-photomultiplier cell of detected electrons (scintillator-photomultiplier) detecting device.Secondly, may be subjected to the influence of electronics and photon collision because electronic secondary enters the energy of detecting device, so can exist bigger signal to change, it helps global noise.
Amorphous silicon is to the short-wavelength light sensitivity, thereby the photoelectron that generation is moved after radiation, causes the conductance of a-Si defective to increase.In certain embodiments, choose the blue light of (or shorter) wavelength that has 470nm, this part ground is because it has the relative higher power that is more effectively absorbed in a-Si, and has lower electrical sheet resistance.Fig. 4 diagram is for two kinds of different wave lengths (470nm (curve 401) and 530nm (curve 402)), and electrical sheet resistance is as the curve map of the function of light intensity.By these curve maps as can be known, along with intensity increases, shorter one (401) reduces resistance quickly in two wavelength.Because the signal corresponding to the light with shorter wavelength may be stronger, so the use of shorter-wavelength light also can make it possible to detect the defective (equation 1 and 3) of reduced size.
With a-Si the shortcoming on the rayed front panel surface of its responsive wavelength is that the TFT channel also is exposed in the identical rayed.Because the TFT structure also is to be made of the a-Si material, so the bump frontside illuminated also will increase a-Si conductivity of electrolyte materials among the TFT in the mode identical with the residue that forms defective.Therefore when being exposed to the light time, the off state conductivity of TFT will increase, and the leakage current of TFT will be higher than respective value in the dark state.This causes the decay of pixel voltage to increase, and this can utilize TFT to the voltage responsive of defects detection, detect by voltage imaging tester or other similar method of testing.In fact and zero defect therefore, even the TFT channel, but depend on that the attenuation test instrument of pixel voltage also can be considered as it having defective mistakenly.That is to say, utilize good TFT pixel of frontside illuminated rayed or channel may cause observing false defect.
The pixel voltage decay that a kind of TFT of making leakage current causes minimizes but makes the detection of a-Si residue respond maximized mode simultaneously, is duration and the intensity that makes this frontside illuminated light pulseization and change light pulse.Fig. 9 is that sidelight regularly drives pattern signal illustrated exemplary graphical user 900 regularly with respect to LCD before illustrating.Signal 901 (odd data), 902 (even data), 903 (odd number gating), 904 (even number gatings) constitute the LCD test and drive pattern.Frontside illuminated pulse 905 is to be characterized by its intensity, duration, zero-time and concluding time.
Figure 10 is another example of possible front side light pattern 1000, and wherein the parameter of frontside illuminated pulse 905 is neither identical for each frame of given driving pattern.Particularly, in first (A) frame, frontside illuminated pulse 905 has 3 milliseconds duration, and zero-time is 3.5 milliseconds, and intensity is 50%.In second (B) frame, frontside illuminated pulse 905 is turn-offed.In the 3rd (C) frame, frontside illuminated pulse 905 has 7 milliseconds duration, and zero-time is 0 millisecond, and intensity is 25%.At last, in the 4th (D) frame, frontside illuminated pulse 905 has 3 milliseconds duration, and zero-time is 3.5 milliseconds, and intensity is 50%.Modulator bias voltage 906 is identical for each frame.
Make that the pixel voltage that caused by the a-Si residue reduces maximization, the voltage that TFT leaked cause simultaneously reduces and minimizes, this is corresponding to making flaw detection sensitivity (DDS) maximization make on-the-spot standard deviation (site standard deviation) little or make the signal to noise ratio (snr) height simultaneously.Particularly, the value of DDS is measuring of defect contrast, and is defined as the comparison between the pixel voltage of the pixel voltage of normal pixel and defective, i.e. DDS=(1-V
Defect/ v
Site-av), and typically for the detection with 30% threshold value (it is the value of typically using in defects detection), DDS should be greater than 0.3.On-the-spot standard deviation should keep less than 0.4V, and signal to noise ratio snr=(V
Site-av/ standard deviation) can be greater than 25.
Figure 11 A and Figure 11 B illustrate the defective (parasitic data-pixel capacitance type defective) for a kind of particular type, utilize the test result 1100 and 1200 of the exemplary embodiment acquisition of system of the present invention.These illustrate DDS (Figure 11 A) and SNR (Figure 11 B) dependence to the preceding sidelight concluding time.The data and curves 1101-1109 of Figure 11 A is shown at 9 pairs of intensity and zero-time value particularly.Particularly: 10% intensity, 1 millisecond of zero-time (curve 1101); 10% intensity, 7 milliseconds of zero-times (curve 1102); 10% intensity, 9 milliseconds of zero-times (curve 1103); 50% intensity, 1 millisecond of zero-time (curve 1104); 50% intensity, 7 milliseconds of zero-times (curve 1105); 50% intensity, 9 milliseconds of zero-times (curve 1106); 90% intensity, 1 millisecond of zero-time (curve 1107); 90% intensity, 7 milliseconds of zero-times (curve 1108); And 90% intensity, 9 milliseconds of zero-times (curve 1109).Curve 1201-1209 shown in Figure 11 B is right corresponding to the intensity/zero-time identical with the response curve 1101-1109 of Figure 11 A.It should be noted that duration of pulse, intensity and zero-time can be different because of panel, and can be different because of different defect types.
At first, can be observed by the offer curves 1101-1109 of institute, DDS increases (because preceding sidelight is to influence of a-Si residue) with end-of-pulsing time and duration, and SNR reduces (because preceding sidelight is to influence of this TFT) with end-of-pulsing time and duration.Secondly, between 10% and 50% intensity, the value of DDS increase and the value of SNR reduces, but then do not change for higher intensity.There is saturation effect in this indication.The 3rd, under the situation for Tend＞14 millisecond (begin the place in the positively-modulated device cycle and get T=0), the value of DDS and SNR seems saturated.The 4th, when not carrying out pixel drive, the pulse that is subject to the negatively-modulated device bias voltage cycle does not have influence.
Indicated as Figure 11 A and Figure 11 B, at intensity is 50% or higher, and begin the situation of the pulse (being pulse and overlapping 1 to 3 millisecond of the retention time that just after data voltage descends, finishes) of t=8 to the 11 millisecond of end in back at positive half period in the modulator bias voltage cycle, in the specific embodiment of the present invention's design, satisfy optimum detection, i.e. DDS＞0.3 and SNR＞25%.It should be noted that because the TFT that light causes leaks, so the pulse that has than long duration causes unacceptable big SNR to reduce.For comparing, in Figure 11 B, the corresponding SNR value 1210 of defects detection under the situation with sidelight before not having also is shown.
At last, it should be understood that said processing and technology are not relevant with any specific device inherently, and can implement by any suitable combination of components.In addition, according to said teaching content, can use various types of fexible units.Making up isolated plant is favourable to carry out said method step also provable.Described the present invention together with specific example, these examples all are intended to as exemplary and non-limiting in all respects.The many various combinations that it will be understood by those skilled in the art that hardware, software and firmware also will be applicable to enforcement the present invention.
In addition, after having considered this instructions and having put into practice the present invention disclosed herein, for those skilled in the art, other embodiment of the present invention will be apparent.The various aspects of described embodiment and/or assembly can use separately in defect detecting system of the present invention or use in any combination.Only be intended to this instructions and these examples are considered as exemplary, true scope of the present invention and spirit are indicated by claims and equivalent thereof.
Claims (30)
1. the system of the defective of a panel that is used for detecting test, this system comprises:
A. the frontside illuminated subsystem is configured to transmit the frontside illuminated light beam to the panel of test, and the electrical characteristics that this frontside illuminated light beam changes described defective are beneficial to detect described defective; And
B. detection subsystem, be configured to detect described defective based on the electrical characteristics that changed of described defective, wherein this frontside illuminated light beam is carried out by chopping and its duration and intensity and optimizes so that the detection of described defective maximization and make the minimized detection of false defect, and wherein this frontside illuminated light beam has wavelength with the absorption maximum optical characteristics coupling of described defective.
2. the system as claimed in claim 1, also comprise voltage signal source, be configured to apply the panel of voltage signal to this test, the voltage signal that applies causes the space voltage on the panel of this test to distribute, wherein this detection subsystem comprises the voltage imaging optical devices, be configured to create the image that the space voltage on the panel of indicating this test distributes, and wherein based on the described defective of creating of image detection.
3. system as claimed in claim 2, wherein this frontside illuminated subsystem is integrated in the optical path of these voltage imaging optical devices.
4. system as claimed in claim 3, wherein the optical path of these voltage imaging optical devices comprises dichronic mirror, is configured to combination voltage imaging beam and this frontside illuminated light beam.
5. system as claimed in claim 3, wherein these voltage imaging optical devices comprise imaging device and low-pass filter, this imaging device is configured to create the image that the space voltage on the panel of indicating this test distributes, and this low-pass filter is configured to prevent that this frontside illuminated light beam from arriving this imaging device.
6. system as claimed in claim 3, wherein these voltage imaging optical devices comprise modulator, be configured to according to the space voltage distribution modulation voltage imaging beam on the panel of this test, this modulator has the film that is configured to reflected voltage imaging beam and transmission frontside illuminated light beam.
7. the system as claimed in claim 1, wherein this frontside illuminated light beam is in the blue wavelength region, and wherein this voltage imaging device voltage imaging light beam of being used to create image has the wavelength that is different from this frontside illuminated light beam.
8. the system of the defective of a panel that is used for detecting test, this system comprises:
A. the frontside illuminated subsystem is configured to transmit the frontside illuminated light beam to the panel of this test, and the electrical characteristics that this frontside illuminated light beam changes described defective are beneficial to detect described defective; And
B. detection subsystem, be configured to detect described defective based on the electrical characteristics that changed of described defective, this detection subsystem comprises the voltage imaging optical devices, be configured to create the image that the space voltage on the panel of indicating this test distributes, wherein based on the described defective of creating of image detection, wherein this frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of described defective, and wherein this frontside illuminated subsystem is integrated in the optical path of these voltage imaging optical devices.
9. system as claimed in claim 8, wherein the optical path of these voltage imaging optical devices comprises dichronic mirror, is configured to combination voltage imaging beam and this frontside illuminated light beam.
10. system as claimed in claim 8, wherein these voltage imaging optical devices comprise imaging device and low-pass filter, this imaging device is configured to create the image that the space voltage on the panel of indicating this test distributes, and this low-pass filter is configured to prevent that this frontside illuminated light beam from arriving this imaging device.
11. system as claimed in claim 8, wherein these voltage imaging optical devices comprise modulator, be configured to according to this voltage imaging light beam of the distribution of the space voltage on the panel of this test modulation, this modulator has the film that is configured to reflect this voltage imaging light beam and this frontside illuminated light beam of transmission.
12. described system as claimed in claim 8, wherein this frontside illuminated light beam is in the blue wavelength region, and wherein this voltage imaging device voltage imaging light beam of being used to create image has the wavelength that is different from this frontside illuminated light beam.
13. the system of the defective of a panel that is used for detecting test, this system comprises:
A. the frontside illuminated subsystem is configured to transmit the frontside illuminated light beam to the panel of this test, and the electrical characteristics that this frontside illuminated light beam changes described defective are beneficial to detect described defective; And
B. detection subsystem, be configured to detect described defective based on the electrical characteristics that changed of described defective, this detection subsystem comprises the voltage imaging optical devices, be configured to create the image that the space voltage on the panel of indicating this test distributes, wherein detect described defective based on the image of creating, wherein this frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of described defective, and wherein this frontside illuminated subsystem is disposed in outside the optical path of these voltage imaging optical devices.
14. system as claimed in claim 13, wherein this frontside illuminated subsystem comprise be positioned in a plurality of special orientation on the installing ring light emitting diode to optimize the homogeneity of this frontside illuminated light beam.
15. system as claimed in claim 13, wherein this frontside illuminated subsystem comprises a plurality of light emitting diodes, and at least one light emitting diode in wherein said a plurality of light emitting diode and collimation lens optical coupled, this collimation lens is positioned on the installing ring to optimize the homogeneity of this frontside illuminated light beam.
16. system as claimed in claim 13, wherein this frontside illuminated subsystem comprises a plurality of light emitting diodes with directional attenuation module optical coupled to optimize the homogeneity of this frontside illuminated light beam.
17. system as claimed in claim 13, wherein this directional attenuation module comprises neutral density filter.
18. system as claimed in claim 13, wherein these voltage imaging optical devices comprise imaging device and low-pass filter, this imaging device is configured to create the image that the space voltage on the panel of indicating this test distributes, and this low-pass filter is configured to prevent that this frontside illuminated light beam from arriving this imaging device.
19. system as claimed in claim 13, wherein these voltage imaging optical devices comprise modulator, be configured to distribute and modulate this voltage imaging light beam according to the space voltage on the panel of this test, this modulator has the film that is configured to reflect this voltage imaging light beam and this frontside illuminated light beam of transmission, and wherein this frontside illuminated subsystem is the space close vicinity that is disposed near this modulator.
20. system as claimed in claim 13, wherein these voltage imaging optical devices and this frontside illuminated subsystem are installed on the moveable platform assembly, and this moveable platform assembly is configured to the panel of this test of scanning under the control of platform control module.
21. system as claimed in claim 20 also is included at least one second voltage imaging optical devices and at least one the second frontside illuminated subsystem installed on this moveable platform assembly.
22. system as claimed in claim 13, wherein this frontside illuminated light beam is in the blue wavelength region, and wherein this voltage imaging device voltage imaging light beam of being used to create image has the wavelength that is different from this frontside illuminated light beam.
23. system as claimed in claim 13, wherein this frontside illuminated subsystem comprises a plurality of light emitting diodes, and each light emitting diode in wherein said a plurality of light emitting diode is equipped with the diffuser of each light emitting diode of optical coupled to described a plurality of light emitting diodes, and this diffuser is configured to the TBI homogeneity eliminating the spatial non-uniformity of this frontside illuminated light beam and improve this frontside illuminated light beam.
24. the method for the defective of a panel that is used for detecting test, this method comprises:
A. utilize the frontside illuminated subsystem to transmit the frontside illuminated light beam to the panel of this test, the electrical characteristics that this frontside illuminated light beam changes described defective are beneficial to detect described defective; And
B. utilize detection subsystem to detect described defective based on the electrical characteristics that changed of described defective, wherein this frontside illuminated light beam is carried out optimization by chopping and its duration and intensity, so that the detection of described defective maximization and make the minimized detection of false defect, and wherein this frontside illuminated light beam has wavelength with the absorption maximum optical characteristics coupling of described defective.
25. method as claimed in claim 24, also comprise and apply the panel of voltage signal to this test, this voltage signal that applies causes the space voltage on the panel of this test to distribute and creates the image that the space voltage on the panel of this test of indication distributes, and wherein detects described defective based on the image of creating.
26. method as claimed in claim 25, the image of wherein indicating the space voltage on the panel of this test to distribute utilizes the voltage imaging light beam to create, and wherein this frontside illuminated light beam is in the optical path of this voltage imaging light beam.
27. method as claimed in claim 25, the image of wherein indicating the space voltage on the panel of this test to distribute utilizes the voltage imaging optical devices to create, these voltage imaging optical devices comprise imaging device and low-pass filter, and this low-pass filter is configured to prevent that this frontside illuminated light beam from arriving this imaging device.
28. method as claimed in claim 25, wherein this frontside illuminated light beam is in the blue wavelength region, and the voltage imaging light beam that wherein is used to create the image that the space voltage on the panel of this test of indication distributes has the wavelength that is different from this frontside illuminated light beam.
29. the method for the defective of a panel that is used for detecting test, this method comprises:
A. utilize the frontside illuminated subsystem to transmit the frontside illuminated light beam to the panel of this test, the electrical characteristics that this frontside illuminated light beam changes described defective are beneficial to detect described defective; And
B. utilize detection subsystem to detect described defective based on the electrical characteristics that changed of described defective, this detection subsystem comprises the voltage imaging optical devices, be configured to create the image that the space voltage on the panel of indicating this test distributes, wherein detect described defective based on the image of creating, wherein this frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of described defective, and wherein this frontside illuminated subsystem is integrated in the optical path of these voltage imaging optical devices.
30. the method for the defective of a panel that is used for detecting test, this method comprises:
A. utilize the frontside illuminated subsystem to transmit the frontside illuminated light beam to the panel of this test, the electrical characteristics that this frontside illuminated light beam changes described defective are beneficial to detect described defective;
B. utilize detection subsystem to detect described defective based on the electrical characteristics that changed of described defective, this detection subsystem comprises the voltage imaging optical devices, be configured to create the image that the space voltage on the panel of indicating this test distributes, wherein detect described defective based on the image of creating, wherein this frontside illuminated light beam has the wavelength that mates with the absorption maximum optical characteristics of described defective, and wherein this frontside illuminated subsystem is disposed in outside the optical path of these voltage imaging optical devices.
Applications Claiming Priority (3)
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| US61/055,031 | 2008-05-21 | ||
| PCT/US2009/044667 WO2009143237A1 (en) | 2008-05-21 | 2009-05-20 | Enhancement of detection of defects on display panels using front lighting |
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| CN102037371A true CN102037371A (en) | 2011-04-27 |
| CN102037371B CN102037371B (en) | 2015-11-25 |
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| JP (1) | JP5520289B2 (en) |
| KR (1) | KR101610821B1 (en) |
| CN (1) | CN102037371B (en) |
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| CN103940832A (en) * | 2013-01-17 | 2014-07-23 | 北京兆维电子(集团)有限责任公司 | Lighting device for automatic optical detection on flat display screen |
| CN106056608A (en) * | 2016-06-01 | 2016-10-26 | 武汉精测电子技术股份有限公司 | Image dot-line defect detection method and device |
| CN109946589A (en) * | 2019-04-08 | 2019-06-28 | 京东方科技集团股份有限公司 | A kind of undesirable method and device of detection display panel electricity |
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Also Published As
| Publication number | Publication date |
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| JP2011521264A (en) | 2011-07-21 |
| WO2009143237A1 (en) | 2009-11-26 |
| KR101610821B1 (en) | 2016-04-20 |
| TWI497060B (en) | 2015-08-21 |
| TW201003063A (en) | 2010-01-16 |
| CN102037371B (en) | 2015-11-25 |
| JP5520289B2 (en) | 2014-06-11 |
| KR20110015633A (en) | 2011-02-16 |
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