CN102023488A - Method for monitoring energy deviation of exposure machine in photoetching technique - Google Patents
Method for monitoring energy deviation of exposure machine in photoetching technique Download PDFInfo
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Abstract
The invention discloses a method for monitoring energy deviation of an exposure machine in a photoetching technique. The method is as follows: firstly, obtaining the thickness of an exposed and developed photoetching adhesive film corresponding to exposure energy under the condition that the energy of the exposure machine is normal; then when monitoring the energy of the exposure machine, exposuring and developing on the photoetching adhesive film formed on a wafer at the energy lower than an exposure threshold, and then measuring the thickness of the developed photoetching adhesive film; carrying out comparison on the thickness of the developed photoetching adhesive film and the thickness of the exposed and developed photoetching adhesive film corresponding to exposure energy lower than the exposure threshold under the condition that the energy of the exposure machine is normal; and then judging whether the energy of the current exposure machine generates deviation according to the compared result. As the thickness of the exposed and developed photoetching adhesive film is very sensitive to the used exposure energy, by utilizing the method, the sensitivity and accuracy of monitoring the energy of the exposure machine can be obviously improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to a kind of method of energy excursion of monitoring photoetching technology exposure machine.
Background technology
Photoetching process is the technology of the specific part of crystal column surface film being removed by a series of production stages.After this, crystal column surface can stay the film that has the micrographics structure.
In the manufacture process of wafer, the various physical units of transistor, diode, electric capacity, resistance and metal level etc. constitute in crystal column surface or top layer.These parts are to generate on a mask layer at every turn, and remove specific part in conjunction with film former and by photo-etching technological process, finally the part of keeping characteristics figure on wafer.The target of photoetching process is the requirement according to circuit design, generate in the tram of crystal column surface size accurately and with the correct related feature pattern of other parts.
Photoetching process is the processing step that all semiconductors are made most critical in the basic technology.Photoetching process has determined the minimum dimension that all processing steps can form in the device fabrication, i.e. critical size, for example grid width in metal-oxide semiconductor (MOS) (MOS) device.
General photoetching process to experience at crystal column surface be coated with primer, spin coating photoresist, soft baking, aligning, exposure, back baking, develop, operations such as hard baking, etching, detection.Wherein the purpose of spin coating photoresist be set up at crystal column surface thin, evenly and do not have a photoresist film of defective.Exposure be by exposure lamp or other radiation source with figure transfer to photoresist film.Above-mentioned each operation included except photoetching process can influence the critical size, is used in the photoetching realize that the device parameter of each processing step also can influence the critical size of whole technology, for example is used to the focusing and the energy of the exposure machine that exposes.The different decision of the energy of exposure machine critical sizes are also different, thereby make that to utilize the electric property of the semiconductor devices that the same process parameter completes inhomogeneous.
A kind of method of monitoring the exposure machine energy is to utilize the variation of critical size in the prior art.But because it is more to influence the factor of critical size variation, be difficult to and will get rid of other factor that influences the critical size variation, therefore utilize the mode accuracy of variation monitoring exposure machine energy of critical size also very low, and experiment finds that the skew of exposure energy is less to the influence of critical size, and therefore the sensitivity of the exposure machine energy excursion being monitored by critical size is lower.
In the another kind of monitoring scheme, usually exposure machine comprises a module that is called energy sensor, the part of the light that sends from light source can enter this module, and this module is carried out continuous monitoring to the light intensity that light source sends, and the light intensity that sends is eliminated in control according to monitoring result.
Even like this, in the technological process of reality, still can observe the variation of critical size, and this variation can be compensated by the energy that is used to expose is regulated.As seen, above-described mode accuracy of exposure energy being monitored by energy sensor is low.
Summary of the invention
In view of this, the invention provides a kind of method of energy excursion of monitoring photoetching technology exposure machine, improve monitoring sensitivity the skew of photolithographic exposure function.At first obtain pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop and carve the thickness of glued membrane, when the energy excursion of monitoring exposure machine, this method comprises: form photoresist film on wafer then; With the energy that is lower than threshold exposure described photoresist film is exposed, and develop; Measure post-develop and carve the thickness of glued membrane; Post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane compares; Judge according to comparative result whether the energy of exposure machine skew occurs.
Preferably, obtaining pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop carves the thickness of glued membrane and comprises: under the normal situation of exposure machine energy, with a plurality of exposure energies exposed in a plurality of positions of the wafer of formation photoresist film, and develop; Thickness with a plurality of positions of passing through described exposure of measurement and post-develop glued membrane at quarter obtains the thickness that pairing exposure of a plurality of exposure energies and post-develop are carved glued membrane.
Wherein, with a plurality of exposure energies exposed in a plurality of positions of the wafer that forms photoresist film and comprise: the exposure energy that increases with stepping exposes to a plurality of positions of the wafer that forms photoresist film.
Preferably, obtaining pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop carves the thickness of glued membrane and comprises: under the normal situation of exposure machine energy, expose with a plurality of wafers of a plurality of exposure energies, and develop the photoresist film that is formed with same thickness; Thickness with by the photoresist film of a plurality of wafers after described exposure of measurement and the development obtains the thickness that pairing exposure of a plurality of exposure energies and post-develop are carved glued membrane.
Wherein, with a plurality of exposure energies a plurality of wafers of the photoresist film that is formed with same thickness are exposed and comprise: the exposure energy that increases with stepping exposes to described a plurality of wafers.
Preferably, this method further comprises: obtain exposure energy under the normal situation of exposure machine energy and exposure and post-develop and carve relation between the thickness of glued membrane; And in that this is lower than the pairing exposure of energy of threshold exposure and post-develop and carves before the thickness of glued membrane compares under the thickness of post-develop being carved glued membrane and the normal situation of exposure machine energy, this method further comprises: the relation according between the thickness of exposure energy under the normal situation of exposure machine energy and exposure and post-develop glued membrane at quarter obtains the thickness that pairing exposure of this energy that is lower than threshold exposure and post-develop are carved glued membrane.
Wherein, the relation between the thickness of exposure energy and exposure and post-develop glued membrane at quarter is a linear relationship under the normal situation of exposure machine energy.
Preferably, this method further comprises: obtain that exposure energy under the normal situation of exposure machine energy is pairing, photoresist film in exposure and after developing with expose before thickness difference; And post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this to be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane and to compare and be: with photoresist film in exposure and after developing and under the thickness difference before the exposure and the normal situation of exposure machine energy this be lower than that the energy of threshold exposure is pairing, photoresist film after exposure and development with expose before thickness difference compare.
Wherein this method further comprises: obtain under the normal situation of exposure machine energy exposure energy and photoresist film in exposure and after developing and the relation between the thickness difference before exposing; And with photoresist film in exposure and after developing and under the thickness difference before the exposure and the normal situation of exposure machine energy this be lower than that the energy of threshold exposure is pairing, photoresist film after exposure and development with expose before thickness difference compare before, this method further comprises: according to exposure energy and photoresist film under the normal situation of exposure machine energy in exposure and after developing and the relation between the thickness difference before the exposure, obtain that this energy that is lower than threshold exposure is pairing, photoresist film in exposure and after developing with expose before thickness difference.
Wherein, under the normal situation of exposure machine energy exposure energy and photoresist film in exposure and after developing and the relation between the thickness difference before exposing be linear relationship.
Preferably, the thickness of this photoresist film before exposure when the thickness of the photoresist film that forms on the wafer equals to obtain the pairing exposure of exposure energy and post-develop and carves the thickness of glued membrane under the normal situation of exposure machine energy.
Compared with prior art, technical scheme provided by the present invention at first obtains the thickness that pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop are carved glued membrane; When the energy of exposure machine is monitored, the photoresist film that forms on the wafer is exposed then, develop, measure the thickness that post-develop is carved glued membrane then with the energy that is lower than threshold exposure; Post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane compares; Then, judge according to comparative result whether the energy of current exposure machine skew occurs.Because it is very sensitive to employed exposure energy that exposure and post-develop are carved the thickness of glued membrane, so this method has significantly improved the sensitivity to the exposure machine energy monitoring.
Description of drawings
Fig. 1 is the method flow diagram of the energy excursion of monitoring photoetching technology exposure machine among the present invention;
The synoptic diagram of Fig. 2 for a plurality of exposure energies being exposed in a plurality of positions of a wafer in the preferred embodiment of the present invention;
Fig. 3 is that a plurality of exposure energies and exposure and post-develop are carved linear relationship between the thickness of glued membrane in the preferred embodiment of the present invention;
Fig. 4 is the linear relationship between the thickness of the energy that is lower than threshold exposure among the present invention and exposure and post-develop glued membrane at quarter.
Embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
The method of the energy excursion of monitoring photoetching technology exposure machine provided by the invention, at first obtain pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop and carve the thickness of glued membrane, then when reality is monitored the energy of exposure machine, relatively this is lower than the pairing exposure of energy of threshold exposure and the thickness that post-develop is carved glued membrane under the thickness of exposure and post-develop glued membrane at quarter and the normal situation of exposure machine energy, and judges according to comparative result whether the energy of exposure machine skew occurs.This method utilization is lower than the energy of threshold exposure and the energy excursion that the relation between exposure and the post-develop film thickness at quarter detects exposure machine, the sensitivity that has improved the exposure machine energy monitoring.
First embodiment:
Fig. 1 is the method flow diagram of the energy excursion of monitoring photoetching technology exposure machine among the present invention.As shown in Figure 1, this method may further comprise the steps:
Step 100: obtain the thickness that pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop are carved glued membrane.
Specifically, this step can comprise, under the normal situation of exposure machine energy, at first on a plurality of wafers, form the identical photoresist film of thickness, the a plurality of wafers that form photoresist films with a plurality of exposure energies expose and develop, and exposure energy that for example can the stepping increase exposes to a plurality of wafers; Then, by measuring exposure and the thickness of the photoresist film of a plurality of wafers in back that develop, obtain the thickness that pairing exposure of a plurality of exposure energies and post-develop are carved glued membrane.
Perhaps, this step can comprise, forms certain thickness photoresist film on a wafer, under the normal situation of exposure machine energy, exposed in a plurality of positions of this wafer and develops with a plurality of exposure energies; Then, carve the thickness of a plurality of positions of glued membrane, obtain the thickness that pairing exposure of a plurality of exposure energies and post-develop are carved glued membrane by measuring exposure and post-develop.For example can expose to a plurality of positions of this wafer with the exposure energy that stepping increases along the direction of arrow shown in Figure 2, and along the orientation measurement exposure of this arrow and the thickness of post-develop glued membrane at quarter.
For example, the step-length of stepping increase exposure energy can be 0.1mj in above-mentioned dual mode.
In this step, the exposure machine energy normally is meant under specific process conditions can access required critical size.
In the time need monitoring the energy excursion of exposure machine, whether the energy that promptly needs to judge exposure machine occurs being offset makes in the time of can't obtaining required critical size under identical process conditions, carries out following steps:
Step 101～step 103: on wafer, form photoresist film, photoresist film is exposed, and develop, measure the thickness that post-develop is carved glued membrane then with the energy that is lower than threshold exposure.
Step 104: post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane compares.
Step 105: judge according to comparative result whether the energy of exposure machine skew occurs.
If this thickness that is lower than the pairing exposure of energy of threshold exposure and post-develop glued membrane at quarter is identical under the thickness that post-develop is carved glued membrane and the normal situation of exposure machine energy, skew does not appear in the energy of then determining exposure machine, otherwise determines that skew appears in the energy of exposure machine.
In such scheme, can obtain the thickness that a pairing exposure of exposure energy and post-develop are carved glued membrane, when the energy excursion of exposure machine is monitored, only use this exposure energy to monitor.Also can obtain pairing exposure of a plurality of exposure energies and post-develop and carve the thickness of glued membrane, when the energy excursion of exposure machine is monitored, use one of them exposure energy.At this moment, can carve the thickness of glued membrane according to working as prior exposure and post-develop, and the thickness of pairing exposure of this exposure energy and post-develop glued membrane at quarter, determine whether the energy of exposure machine skew occurs; Then, according to the thickness of pairing exposure of other exposure energy and post-develop glued membrane at quarter, roughly determine the side-play amount of current exposure machine energy, thereby the energy of exposure machine is regulated and control according to this side-play amount.
In this embodiment, the thickness of the photoresist film that on wafer, forms when in the practical application energy of exposure machine being monitored, be the thickness of the photoresist film of formation in the step 101, with obtain the normal situation of exposure machine energy in the step 100 under the thickness of the pairing exposure of exposure energy and post-develop formed photoresist film when carving the thickness of glued membrane can be identical, also can be different.Under the different situation of thickness, when judging whether skew to occur, need to get rid of the thickness difference of photoresist itself.
Second embodiment:
In this embodiment, obtain pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop and carve after the thickness of glued membrane, can also obtain the relation between the thickness of exposure energy and exposure and post-develop glued membrane at quarter.Fig. 3 is that a plurality of exposure energies and exposure and post-develop are carved relation between the thickness of glued membrane in the preferred embodiment of the present invention, and wherein the kind of photoresist is Acetal or ESCAP, and the thickness of photoresist film is before the exposure
As shown in Figure 3, from the relation between the thickness of a plurality of exposure energies and exposure and post-develop glued membrane at quarter, the threshold exposure of this photoresist is about 2.8mj as can be seen, and in the scope of exposure energy less than the exposure threshold values, the thickness of exposure energy and photoresist film is linear relationship substantially.During less than about 2.6mj, every increases of exposure energy 0.1mj, the thickness of photoresist film just reduce pact at exposure energy
During greater than 2.6mj and less than threshold exposure, the thickness of photoresist film sharply reduces with the increase of exposure energy at exposure energy, and when exposure energy reached threshold values, photoresist can all be developed after with this energy exposure.
In the present embodiment, choose the scope of exposure energy between 1 to 2.6mj.Certainly, also can choose 2.6mj to the exposure energy between the threshold exposure.
Fig. 4 is the linear relationship between the thickness of the energy that is lower than threshold exposure in the preferred embodiment of the present invention and exposure and post-develop glued membrane at quarter.As shown in Figure 3, transverse axis x is an exposure energy, and unit is mj, and the longitudinal axis is carved the thickness of glued membrane for exposure and post-develop.As can be seen from Figure 3, in 1 to 2.6mj scope, the linear relationship between the thickness of a plurality of exposure energies and exposure and post-develop glued membrane at quarter can fit to:
y＝-300.52x+1975.9。
Draw as calculated, the linear relationship of this match and the similarity of experimental data are 0.9951, i.e. R
2=0.9951.As seen, the similarity of above-mentioned linear relationship and experimental data is very high, can represent to be lower than the exposure energy of threshold value and the actual relationship of photoresist film thickness basically.
In this embodiment, during execution in step 104, at first calculate the thickness that the pairing exposure of the energy that is lower than threshold exposure and post-develop are carved glued membrane, and then the thickness of post-develop being carved glued membrane compares with the thickness that calculates according to this relation.
The advantage of present embodiment is, occur at the energy of determining exposure machine under the situation of skew, can also be according to the thickness of exposure and post-develop glued membrane at quarter, and the relation between the thickness of exposure energy and exposure and post-develop glued membrane at quarter, obtain the side-play amount of exposure machine energy, and according to the energy of this offset calibration exposure machine, thereby improve the accuracy of exposure machine energy monitoring.By above-mentioned R
2Value as can be seen, the side-play amount of the exposure machine energy that calculates according to above-mentioned linear relationship can be represented the side-play amount of the actual appearance of exposure machine energy basically, thereby makes the present invention can improve the accuracy of exposure machine energy monitoring.
For example, if when the energy excursion of exposure machine is monitored, the presently used energy that is lower than threshold exposure is 1.7mj, and the thickness of exposure that measures and post-develop glued membrane at quarter is
Carve the relation between the thickness of glued membrane according to the exposure energy that obtains under the normal situation of exposure machine energy and exposure and post-develop, the thickness of the photoresist film in the time of can calculating exposure energy and be 1.7mj should be
Two thickness that more than calculate are unequal, can determine that therefore skew appears in the energy of exposure machine.And the difference that obtains between these two thickness is
Therefore can determine the energy 0.1mj less than normal of exposure machine.Here just can the energy of exposure machine be transferred big 0.1mj, thereby control the energy of exposure machine exactly according to this off-set value.
The 3rd embodiment:
In the 3rd preferred embodiment of the present invention, obtain pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop and carve after the thickness of glued membrane, calculate that this exposure energy is pairing, photoresist film in exposure and after developing with expose before thickness difference.
For example, can be under the normal situation of exposure machine energy, on wafer, form photoresist film, measure the thickness of this photoresist film, promptly the thickness of the photoresist film before the exposure exposes to this photoresist film then, and develops, measure exposure and post-develop and carve the thickness of glued membrane, calculate that exposure energy is pairing, photoresist film in exposure and after developing with expose before thickness difference.
Perhaps also can be under the normal situation of exposure machine energy, on two wafers, form the identical photoresist film of thickness, one of them wafer is exposed and develops, and measure the thickness of another wafer simultaneously, obtain the thickness of photoresist film before exposure, and measure photoresist film in exposure and the thickness after developing, thereby obtain that exposure energy is pairing, photoresist film in exposure and after developing with expose before thickness difference.
In this embodiment, during execution in step 104, at first calculate photoresist film in exposure and after developing with exposure before thickness difference, again with under this difference and the normal situation of exposure machine energy this be lower than that the energy of threshold exposure is pairing, photoresist film after exposure and development with expose before thickness difference compare.Then, in step 105,, judge whether the energy of exposure machine skew occurs according to comparative result.
The 4th embodiment:
In this embodiment, can also be on the basis of the 3rd embodiment, further comprise obtaining under the normal situation of exposure machine energy exposure energy and photoresist film in exposure and after developing and the relation between the thickness difference before exposing.
For example, can on a wafer, form photoresist film, measure the thickness of this photoresist film, be the thickness of photoresist film before exposure, with a plurality of exposure energies same wafer is exposed then, measure the thickness of the pairing photoresist film of different exposure energies, thereby obtain a plurality of exposure energies and photoresist film in exposure and after developing and the relation between the thickness difference before exposing.
Perhaps also can be under the normal situation of exposure machine energy, on two wafers, form the identical photoresist film of thickness, with a plurality of exposure energies one of them wafer is exposed, and measure the thickness of another wafer simultaneously, obtain the thickness of photoresist film before exposure, and measure thickness, thereby obtain a plurality of exposure energies and photoresist film in exposure and after developing and the relation between the thickness difference before exposing with the photoresist film of a plurality of exposure energies exposures.
In this embodiment, during execution in step 104, at first calculate photoresist film in exposure and after developing and the thickness difference before exposing, and according to a plurality of exposure energies and photoresist film in exposure and after developing and the relation between the thickness difference before exposing, calculate the pairing photoresist film of this energy that is lower than threshold value in exposure and after developing and the thickness difference before exposing, above two thickness differences are compared.Then, in step 105, judge according to comparative result whether the energy of exposure machine skew occurs.
The advantage of present embodiment is, occur at the energy of determining exposure machine under the situation of skew, can also be according to the thickness of exposure and post-develop glued membrane at quarter, and the relation between the thickness of exposure energy and exposure and post-develop glued membrane at quarter, obtain the side-play amount of exposure machine energy, and according to the energy of this offset calibration exposure machine.
In third and fourth embodiment, since be utilize photoresist film before exposure with exposure after thickness difference and the normal situation of exposure machine energy under corresponding this difference of same exposure energy compare, therefore can get rid of the inhomogeneous and influence that monitoring result is caused between each technology of photoresist film applied thickness that glue spreader causes, thus the accuracy that has further improved the exposure machine energy monitoring.
By the above as can be seen, technical scheme provided by the present invention at first obtains the thickness that pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop are carved glued membrane; When the energy of exposure machine is monitored, the photoresist film that forms on the wafer is exposed then, develop, measure the thickness that post-develop is carved glued membrane then with the energy that is lower than threshold exposure; Post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane compares, judge according to comparative result whether the energy of current exposure machine skew occurs at last.Because it is very sensitive to employed exposure energy that exposure and post-develop are carved the thickness of glued membrane, so this method has significantly improved sensitivity and accuracy to the exposure machine energy monitoring.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1. the method for the energy excursion of a monitoring photoetching technology exposure machine obtains the thickness that pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop are carved glued membrane; This method comprises:
On wafer, form photoresist film;
With the energy that is lower than threshold exposure described photoresist film is exposed, and develop;
Measure post-develop and carve the thickness of glued membrane;
Post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane compares;
Judge according to comparative result whether the energy of exposure machine skew occurs.
2. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 1 is characterized in that, obtains pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop and carves the thickness of glued membrane and comprise:
Under the normal situation of exposure machine energy, with a plurality of exposure energies exposed in a plurality of positions of the wafer of formation photoresist film, and develop; With
Carve the thickness of a plurality of positions of glued membrane by measuring described exposure and post-develop, obtain the thickness that pairing exposure of a plurality of exposure energies and post-develop are carved glued membrane.
3. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 2, it is characterized in that with a plurality of exposure energies being exposed in a plurality of positions of the wafer of formation photoresist film comprises: the exposure energy that increases with stepping exposes to a plurality of positions of the wafer of formation photoresist film.
4. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 1 is characterized in that, obtains pairing exposure of exposure energy under the normal situation of exposure machine energy and post-develop and carves the thickness of glued membrane and comprise:
Under the normal situation of exposure machine energy, expose with a plurality of wafers of a plurality of exposure energies, and develop the photoresist film that is formed with same thickness; With
By measuring described exposure and the thickness of the photoresist film of a plurality of wafers in back that develop, obtain the thickness that pairing exposure of a plurality of exposure energies and post-develop are carved glued membrane.
5. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 4, it is characterized in that with a plurality of exposure energies a plurality of wafers of the photoresist film that is formed with same thickness being exposed comprises: the exposure energy that increases with stepping exposes to described a plurality of wafers.
6. as the method for the energy excursion of each described monitoring photoetching technology exposure machine in the claim 1 to 5, it is characterized in that this method further comprises: obtain exposure energy under the normal situation of exposure machine energy and exposure and post-develop and carve relation between the thickness of glued membrane;
In that this is lower than the pairing exposure of energy of threshold exposure and post-develop and carves before the thickness of glued membrane compares under the thickness of post-develop being carved glued membrane and the normal situation of exposure machine energy, this method further comprises: the relation according between the thickness of exposure energy under the normal situation of exposure machine energy and exposure and post-develop glued membrane at quarter obtains the thickness that pairing exposure of this energy that is lower than threshold exposure and post-develop are carved glued membrane.
7. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 6 is characterized in that, the relation under the normal situation of exposure machine energy between the thickness of exposure energy and exposure and post-develop glued membrane at quarter is a linear relationship.
8. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 6 is characterized in that, this method further comprises:
Carve the thickness of glued membrane according to exposure and post-develop, and the relation between the thickness of exposure energy and exposure and post-develop glued membrane at quarter under the normal situation of exposure machine energy, obtain the side-play amount of exposure machine energy, and according to the energy of this offset calibration exposure machine.
9. as the method for the energy excursion of each described monitoring photoetching technology exposure machine in the claim 1 to 5, it is characterized in that,
This method further comprises: obtain that exposure energy under the normal situation of exposure machine energy is pairing, photoresist film in exposure and after developing with expose before thickness difference;
Post-develop is carved under the thickness of glued membrane and the normal situation of exposure machine energy this to be lower than the pairing exposure of energy of threshold exposure and thickness that post-develop is carved glued membrane and to compare and be: with photoresist film in exposure and after developing and under the thickness difference before the exposure and the normal situation of exposure machine energy this be lower than that the energy of threshold exposure is pairing, photoresist film after exposure and development with expose before thickness difference compare.
10. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 9 is characterized in that,
This method further comprises: obtain under the normal situation of exposure machine energy exposure energy and photoresist film in exposure and after developing and the relation between the thickness difference before exposing;
With photoresist film in exposure and after developing and under the thickness difference before the exposure and the normal situation of exposure machine energy this be lower than that the energy of threshold exposure is pairing, photoresist film after exposure and development with expose before thickness difference compare before, this method further comprises: according to exposure energy and photoresist film under the normal situation of exposure machine energy in exposure and after developing and the relation between the thickness difference before the exposure, obtain that this energy that is lower than threshold exposure is pairing, photoresist film in exposure and after developing with expose before thickness difference.
11. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 10, it is characterized in that, under the normal situation of exposure machine energy exposure energy and photoresist film in exposure and after developing and the relation between the thickness difference before exposing be linear relationship.
12. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 10 is characterized in that, this method further comprises:
Thickness according to exposure and post-develop glued membrane at quarter, and exposure energy and photoresist film in exposure and after developing and the relation between the thickness difference before exposing under the normal situation of exposure machine energy, obtain the side-play amount of exposure machine energy, and according to the energy of this offset calibration exposure machine.
13. the method for the energy excursion of monitoring photoetching technology exposure machine as claimed in claim 1, it is characterized in that the thickness of this photoresist film before exposure when the thickness of the photoresist film that forms on the wafer equals to obtain the pairing exposure of exposure energy and post-develop and carves the thickness of glued membrane under the normal situation of exposure machine energy.
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| CN101995774B (en) * | 2009-08-20 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | method for monitoring DMR performance |
| CN102866599A (en) * | 2012-10-12 | 2013-01-09 | 上海华力微电子有限公司 | Method for detecting controllability of mask aligner to graph fuzzy imaging |
| CN102903649A (en) * | 2011-07-28 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Method for selecting photoresist thickness of ion implantation |
| CN105093840A (en) * | 2014-05-15 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method for scattered light parameter of exposure machine |
| CN106323181A (en) * | 2016-11-02 | 2017-01-11 | 苏州同冠微电子有限公司 | Determining method for photoresist thickness |
| CN108050947A (en) * | 2018-01-02 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of detection method of thicknesses of layers |
| CN108107497A (en) * | 2017-12-12 | 2018-06-01 | 深圳市晶特智造科技有限公司 | Preparing grating method |
| CN108288595A (en) * | 2018-01-29 | 2018-07-17 | 厦门乾照光电股份有限公司 | A kind of photoresist monitoring method |
| CN110651228A (en) * | 2017-05-22 | 2020-01-03 | 西默有限公司 | Monitoring system for optical lithography system |
| CN113504711A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Detection method for photoetching development |
| CN114242609A (en) * | 2021-12-16 | 2022-03-25 | 武汉新芯集成电路制造有限公司 | Photoresist sensitivity detection method and detection system |
| CN114624958A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院微电子研究所 | A method for detecting and correcting wafer edge exposure and glue developing machine |
| CN115047730A (en) * | 2022-06-29 | 2022-09-13 | 上海华力集成电路制造有限公司 | Test wafer, manufacturing method thereof and photoresist thickness evaluation method |
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| CN101995774B (en) * | 2009-08-20 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | method for monitoring DMR performance |
| CN102903649A (en) * | 2011-07-28 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Method for selecting photoresist thickness of ion implantation |
| CN102866599A (en) * | 2012-10-12 | 2013-01-09 | 上海华力微电子有限公司 | Method for detecting controllability of mask aligner to graph fuzzy imaging |
| CN102866599B (en) * | 2012-10-12 | 2015-05-06 | 上海华力微电子有限公司 | Method for detecting controllability of mask aligner to graph fuzzy imaging |
| CN105093840B (en) * | 2014-05-15 | 2017-05-24 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method for scattered light parameter of exposure machine |
| CN105093840A (en) * | 2014-05-15 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method for scattered light parameter of exposure machine |
| CN106323181B (en) * | 2016-11-02 | 2019-02-22 | 苏州同冠微电子有限公司 | The determination method of photoresist thickness |
| CN106323181A (en) * | 2016-11-02 | 2017-01-11 | 苏州同冠微电子有限公司 | Determining method for photoresist thickness |
| CN110651228A (en) * | 2017-05-22 | 2020-01-03 | 西默有限公司 | Monitoring system for optical lithography system |
| CN108107497B (en) * | 2017-12-12 | 2021-06-11 | 郑君雄 | Grating manufacturing method |
| CN108107497A (en) * | 2017-12-12 | 2018-06-01 | 深圳市晶特智造科技有限公司 | Preparing grating method |
| CN108050947A (en) * | 2018-01-02 | 2018-05-18 | 京东方科技集团股份有限公司 | A kind of detection method of thicknesses of layers |
| CN108288595A (en) * | 2018-01-29 | 2018-07-17 | 厦门乾照光电股份有限公司 | A kind of photoresist monitoring method |
| CN108288595B (en) * | 2018-01-29 | 2020-07-31 | 厦门乾照光电股份有限公司 | Photoresist monitoring method |
| CN114624958A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院微电子研究所 | A method for detecting and correcting wafer edge exposure and glue developing machine |
| CN113504711A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Detection method for photoetching development |
| CN113504711B (en) * | 2021-06-28 | 2023-05-02 | 上海华虹宏力半导体制造有限公司 | Method for detecting photoetching development |
| CN114242609A (en) * | 2021-12-16 | 2022-03-25 | 武汉新芯集成电路制造有限公司 | Photoresist sensitivity detection method and detection system |
| CN114242609B (en) * | 2021-12-16 | 2024-11-29 | 武汉新芯集成电路股份有限公司 | Detection method and detection system for sensitivity of photoresist |
| CN115047730A (en) * | 2022-06-29 | 2022-09-13 | 上海华力集成电路制造有限公司 | Test wafer, manufacturing method thereof and photoresist thickness evaluation method |
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Application publication date: 20110420 |