CN101997502A

CN101997502A - Method for manufacturing package, method of manufacturing piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece

Info

Publication number: CN101997502A
Application number: CN2010102692668A
Authority: CN
Inventors: 杉山刚
Original assignee: Seiko Instruments Inc
Current assignee: Seiko Instruments Inc
Priority date: 2009-08-25
Filing date: 2010-08-25
Publication date: 2011-03-30
Anticipated expiration: 2030-08-25
Also published as: JP2011049663A; CN101997502B; JP5529463B2; US20110050043A1; TW201131704A; US8898875B2

Abstract

Providing a method for manufacturing a package capable of achieving reliable anodic bonding between the bonding material 35 and a base board wafer 40 even when the bonding material 35 having a large resistance value is used. Providing a method for manufacturing a package by anodically bonding a bonding material 35, which is fixed in advance to an inner surface of a lid board wafer 50 made of an insulator, to an inner surface of a base board wafer 40 made of an insulator, the method including an anodic bonding step where an auxiliary bonding material 72 serving as an anode is disposed on an outer surface of the lid board wafer 50, a cathode 71 is disposed on an outer surface of the base board wafer 40, and a voltage is applied between the auxiliary bonding material 72 and the cathode 71, wherein the auxiliary bonding material 72 is made of a material that causes an anodic bonding reaction between the auxiliary bonding material 72 and the lid board wafer 50 in the anodic bonding step.

Description

The manufacture method of packaging part, the manufacture method of piezoelectric vibrator, oscillator, electronic equipment and radio wave clock

Technical field

The present invention relates to the manufacture method of packaging part (package), the manufacture method of piezoelectric vibrator, oscillator, electronic equipment and radio wave clock with piezoelectric vibrator.

Background technology

In recent years, in portable phone or portable information terminal,, use the piezoelectric vibrator that utilizes crystal etc. as the timing source of moment source or control signal etc., derived reference signal etc.For this piezoelectric vibrator known have a variety of, but as one of them, the known piezoelectric vibrator that surface installing type is arranged.As this piezoelectric vibrator, the known structure that 3 layers of structure type that the piezoelectric substrate that will be formed with piezoelectric vibration piece engages from clamping up and down with basal substrate and lid substrate are arranged.At this moment, piezoelectric vibrator is accommodated in the cavity (confined chamber) that is formed between basal substrate and the lid substrate.

In addition, in the last few years also in the structure of developing 2 layers of structure type, but not the structure of described 3 layers of structure type.Such piezoelectric vibrator has been taken in piezoelectric vibration piece for by direct joint basal substrate and 2 layers of structure that the lid substrate encapsulates in being formed at two cavitys between the substrate.The piezoelectric vibrator of 2 layers of structure type of this packaging partization is compared with the structure of 3 layers of structure, and aspect such as slimming is more excellent seeking, thereby is suitable for using.

As making basal substrate of making by glass material and the method that the lid substrate directly engages, anodic bonding has been proposed.Anodic bonding is by at the affixed grafting material of the inner surface of a substrate, afterwards at this grafting material linking probe as anode, outer surface at another substrate disposes negative electrode and applies voltage, grafting material is engaged with the inner surface of another substrate (for example with reference to patent documentation 1).As the material of this grafting material, adopt Al.

Patent documentation 1: TOHKEMY 2001-72433 communique

Summary of the invention

Yet the problem of existence is: if the grafting material that is used for anodic bonding exposes the outside of the packaging part behind the joint, the grafting material that is formed by Al can corrode, and the air-tightness of packaging part can descend.

Therefore, recently,, inquire into and adopt Si as the material of grafting material.

Yet because the sheet resistance of Si film is bigger, therefore as if the grafting material that forms thinner thickness with Si, it is big that resistance value can become.Therefore, if when anodic bonding at the grafting material linking probe, then the voltage drop meeting with increase pro rata from the distance of probe tie point.In view of the above, the problem of existence is: the current potential of grafting material becomes inhomogeneous, although can carry out anodic bonding near the probe tie point, can not carry out anodic bonding in the place of leaving the probe tie point.

In addition, in order also to carry out anodic bonding in the place of leaving the probe tie point, need apply high voltage and carry out anodic bonding, the energy consumption quantitative change is big.

In addition, form the Si film and need carry out in order to form the lower Si film of resistance value, to utilize sputter or CVD to wait at high temperature (more than 800 ℃).Yet, be about 600 ℃ owing to form the softening point of the glass substrate of Si film, therefore be difficult on glass substrate, form the Si film with high temperature.

The present invention finishes in view of aforesaid problem, its purpose is to provide, even when adopting the bigger grafting material of resistance value, also can be reliably with the manufacture method of the packaging part of anodic bonding between grafting material and the substrate and the manufacture method of piezoelectric vibrator.

For solving described problem, the manufacture method of packaging part of the present invention, the inner surface anodic bonding of the grafting material of the inner surface by will being fixed in first substrate of making by insulator in advance and second substrate made by insulator, come the manufacturing and encapsulation part, it is characterized in that, have the anodic bonding operation, be configured as the joint auxiliary material of anode, at the outer surface configuration negative electrode of described second substrate and apply voltage at the outer surface of described first substrate; Described joint auxiliary material are formed by the material that produces the anodic bonding reaction in described anodic bonding operation, between described joint auxiliary material and described first substrate.

According to this structure, by applying voltage engaging between auxiliary material and the negative electrode, produce the anodic bonding reaction engaging between the outer surface of auxiliary material and first substrate, link therewith, between the inner surface of the grafting material and second substrate by anodic bonding.In view of the above, even when adopting the bigger grafting material of resistance value, also can apply uniform voltage, can make between the inner surface of the grafting material and second substrate anodic bonding reliably to the whole surface of grafting material.In addition, can set arbitrarily owing to engage the resistance value of auxiliary material, therefore by adopting the less joint auxiliary material of resistance value, can with under the identical condition of the situation that adopts the less grafting material of resistance value, carry out anodic bonding.

In addition, preferably described grafting material is formed by Al, Si film or Si piece (bulk) material.Particularly preferably being described grafting material is formed by the Si film.

Because the sheet resistance of Si film is bigger, therefore if the grafting material that forms thinner thickness by Si then resistance value can increase, but according to the present invention, can make between the inner surface of the grafting material and second substrate anodic bonding reliably.And even be used in the grafting material of anodic bonding when exposing the outside of the packaging part behind the joint, the grafting material that is formed by Si can not corrode, and therefore can prevent the bubble-tight decline of packaging part.

In addition, preferably described joint auxiliary material are formed by Al, Si block of material, Cr or C.

According to this structure, can produce the anodic bonding reaction really engaging between the outer surface of auxiliary material and first substrate, therefore link therewith, can be with anodic bonding reliably between the inner surface of the grafting material and second substrate.

In addition, preferably described joint auxiliary material are films such as aluminium foil.

Handle easy and cheap films such as aluminium foil as engaging auxiliary material by adopting, can suppress the rising of manufacturing cost.In addition, because therefore the thinner thickness of films such as aluminium foil can simply be removed after the anodic bonding operation.

In addition, preferably after described anodic bonding operation, has the operation of removing described joint auxiliary material.

According to this structure, can make engage auxiliary material do not have residual, with identical in the past packaging part.

The manufacture method of piezoelectric vibrator of the present invention is characterised in that, piezoelectric vibrator by with piezoelectric vibration piece vacuum seal, is made in the inside of the packaging part of making in the manufacture method of using claim 1 each described packaging part to the claim 5.

According to this structure, owing to comprise between grafting material and the substrate that air-tightness is packaging part preferably, and the vacuum-packed reliability of piezoelectric vibration piece is improved by anodic bonding reliably.In view of the above, the series resonance resistance value (R1) of piezoelectric vibrator maintains lower state, therefore can make the piezoelectric vibration piece vibration with low-power, can make energy efficiency piezoelectric vibrator preferably.

Oscillator of the present invention is characterised in that, described piezoelectric vibrator is electrically connected to integrated circuit and as oscillator.

Electronic equipment of the present invention is characterised in that, makes described piezoelectric vibrator be electrically connected to timing portion.

Radio wave clock of the present invention is characterised in that, makes described piezoelectric vibrator be electrically connected to filtering portion.

According to the present invention,, therefore can make energy efficiency oscillator, electronic equipment and radio wave clock preferably owing to comprise energy efficiency piezoelectric vibrator preferably.

(invention effect)

Manufacture method according to packaging part of the present invention, by between joint auxiliary material and negative electrode, applying voltage, produce the anodic bonding reaction engaging between the outer surface of auxiliary material and first substrate, link therewith, between the inner surface of the grafting material and second substrate by anodic bonding.In view of the above, even when adopting the bigger grafting material of resistance value, also can apply uniform voltage, can make between the inner surface of the grafting material and second substrate anodic bonding reliably to the whole surface of grafting material.In addition, can set arbitrarily owing to engage the resistance value of auxiliary material, therefore by adopting the less joint auxiliary material of resistance value, can with under the identical condition of the situation that adopts the less grafting material of resistance value, carry out anodic bonding.

Description of drawings

Fig. 1 is the outward appearance oblique view of the related piezoelectric vibrator of execution mode.

Fig. 2 is the vertical view of state that the lid substrate of piezoelectric vibrator is pulled down.

Fig. 3 is the side sectional view along the A-A line of Fig. 2.

Fig. 4 is the exploded perspective view of piezoelectric vibrator.

Fig. 5 is the vertical view of piezoelectric vibration piece.

Fig. 6 is the upward view of piezoelectric vibration piece.

Fig. 7 is the cutaway view along the B-B line of Fig. 5.

Fig. 8 is the flow chart of the manufacture method of the related piezoelectric vibrator of execution mode.

Fig. 9 is the exploded perspective view of disk (wafer) body.

Figure 10 is the key diagram that engages operation, is the partial enlarged drawing along the cross section of the C-C line of Fig. 9.

Figure 11 is the key diagram that engages reaction.

Figure 12 engages the key diagram that auxiliary material are removed operation, is the partial enlarged drawing along the cross section of the C-C line of Fig. 9.

Figure 13 is the structure chart of the related oscillator of execution mode.

Figure 14 is the structure chart of the related electronic equipment of execution mode.

Figure 15 is the structure chart of the related radio wave clock of execution mode.

Description of reference numerals

1... piezoelectric vibrator; 2... basal substrate (second substrate); 3... lid substrate (first substrate); 4... piezoelectric vibration piece; 9... packaging part; 35... grafting material; 40... basal substrate disk; 50... lid substrate disk; 60... wafer body; 71... electrode (negative electrode); 72... joint auxiliary material; 100... oscillator; 101... the integrated circuit of oscillator; 110... mobile information apparatus (electronic equipment); 113... the timing portion of electronic equipment; 130... radio wave clock; 131... the filtering portion of radio wave clock.

Embodiment

(piezoelectric vibrator)

Next, with reference to the related piezoelectric vibrator of description of drawings embodiments of the present invention.Fig. 1 is the outward appearance oblique view of the related piezoelectric vibrator of execution mode.Fig. 2 is the vertical view of state that the lid substrate of piezoelectric vibrator is pulled down.Fig. 3 is the side sectional view along the A-A line of Fig. 2.Fig. 4 is the exploded perspective view of piezoelectric vibrator.In addition, in Fig. 4,, omit the diagram of excitation electrode 15,

extraction electrode

19,20, assembling

electrode

16,17 and the weight metal film 21 of piezoelectric vibration piece 4 described later in order to be easy to see clearly accompanying drawing.

As shown in Figures 1 to 4, the piezoelectric vibrator 1 of present embodiment is to comprise: basal substrate 2 and lid substrate 3 pass through grafting material 35 by the packaging part 9 of anodic bonding; And the piezoelectric vibrator 1 of surface installing type of piezoelectric vibration piece 4 that is accommodated in the cavity C of packaging part 9.

Fig. 5 is the vertical view of piezoelectric vibration piece, and Fig. 6 is a upward view, and Fig. 7 is the cutaway view along the B-B line of Fig. 5.

To shown in Figure 7, piezoelectric vibration piece 4 is vibrating reeds of the tuning-fork-type that formed by piezoelectrics such as crystal or lithium tantalate, lithium niobates, vibrates when applying set voltage as Fig. 5.This piezoelectric vibration piece 4 comprises: a pair of

resonating arm

10,11 of configured in parallel; The base portion 12 that the base end side one of this a pair of

resonating arm

10,11 is fixing; And be formed at ditch portion 18 on two interareas of a pair of resonating arm 10,11.This ditch portion 18 is along the long side direction of this

resonating arm

10,11, be formed into roughly the centre from the base end side of

resonating arm

10,11 near.

In addition, the piezoelectric vibration piece 4 of present embodiment has: be formed on the outer surface of a pair of

resonating arm

10,11 and make the excitation electrode 15 that is made of first excitation electrode 13 and second excitation electrode 14 of a pair of

resonating arm

10,11 vibrations; And the assembling

electrode

16,17 that is electrically connected with first excitation electrode 13 and second excitation electrode 14.Excitation electrode 15, assembling

electrode

16,17 and

extraction electrode

19,20 are for example formed by the tunicle of chromium (Cr) or nickel (Ni), aluminium (Al), titanium electric conducting materials such as (Ti).

Excitation electrode 15 is electrodes that a pair of

resonating arm

10,11 is vibrated in direction near each other or that separate with set resonance frequency.Constitute first excitation electrode 13 and second excitation electrode 14 of excitation electrode 15, form with the disconnected state composition of TURP respectively at the outer surface of a pair of resonating arm 10,11.Particularly, first excitation electrode 13 mainly is formed in the ditch portion 18 of a resonating arm 10 on the two sides with another resonating arm 11, and second excitation electrode 14 mainly is formed on the two sides of a resonating arm 10 in the ditch portion 18 with another resonating arm 11.In addition, first excitation electrode 13 and second excitation electrode 14 are electrically connected to assembling

electrode

16,17 via

extraction electrode

19,20 respectively on two interareas of base portion 12.

In addition, be coated with the weight metal film 21 that is used to adjust (frequency adjustment), so that the vibrational state of itself is in the scope internal vibration of set frequency at the front end of a pair of resonating arm 10,11.The fine setting film 21b that this weight metal film 21 uses when being divided into when adjusting frequency roughly the coarse adjustment film 21a that uses and trickle the adjustment.

As Fig. 1, Fig. 3 and shown in Figure 4, but lid substrate 3 is substrates of the anodic bonding made by glass material, for example soda lime glass, forms roughly tabular.In lid substrate 3 and composition surface basal substrate 2 a side, form the recess 3a that the cavity C of holding piezoelectric vibration piece 4 is used.

In lid substrate 3 and whole composition surface basal substrate 2 a side, form the grafting material 35 that anodic bonding is used.That is, grafting material 35 also is formed at the frame region on every side of recess 3a except being formed on the total inner surface of recess 3a.The grafting material 35 of present embodiment is formed by the Si film, but grafting material 35 also can be formed by Al.In addition, as grafting material, also can be for utilizing the Si block of material of low resistanceizations such as doping.Then, as described later, this grafting material 35 and basal substrate 2 anodic bonding, cavity C is by vacuum seal.

Basal substrate 2 is by the glass material substrate made of soda lime glass for example, and as shown in Figures 1 to 4, the profile identical with lid substrate 3 forms roughly tabular.

In the upper surface 2a of basal substrate 2 side (with the composition surface side of lid substrate 3), as shown in Figures 1 to 4, composition has a pair of circuitous electrode 36,37.Each

circuitous electrode

36,37 is that Cr film, upper strata are that the duplexer of Au film forms by lower floor for example.

And as shown in Figure 3, Figure 4, by salient point (bump) B of gold etc., the assembling

electrode

16,17 of described piezoelectric vibration piece 4 is bonded on the surface of

circuitous electrode

36,37 by salient point.Piezoelectric vibration piece 4 so that

resonating arm

10,11 be engaged from the state that the upper surface 2a of basal substrate 2 floats.

In addition, form a pair of through

electrode

32,33 that connects this basal substrate 2 at basal substrate 2.Each through

electrode

32,33 is formed by the metal material that stainless steel or Ag, Al etc. have conductivity.Through electrode 32 be formed at a circuitous electrode 36 under.Another through electrode 33 is formed near the front end of resonating arm 11, is connected with another circuitous electrode 37 by circuitous wiring.

In addition, as Fig. 1, Fig. 3 and shown in Figure 4, be formed with pair of

external electrodes

38,39 at the lower surface 2b of basal substrate 2.Pair of

external electrodes

38,39 is formed at the both ends of the long side direction of basal substrate 2, is electrically connected respectively with respect to a pair of through

electrode

32,33.

When piezoelectric vibrator 1 work that makes such formation, the

outer electrode

38,39 to being formed at basal substrate 2 applies set driving voltage.Like this, from an outer electrode 38,, be energized to first excitation electrode 13 of piezoelectric vibration piece 4 via a through electrode 32 and a circuitous electrode 36.In addition, from another outer electrode 39,, be energized to second excitation electrode 14 of piezoelectric vibration piece 4 via another through electrode 33 and another circuitous electrode 37.In view of the above, electric current is flow through in the excitation electrode 15 that is made of first excitation electrode 13 and second excitation electrode 14 of piezoelectric vibration piece 4, and can make a pair of resonating

arm

10,11 with of the direction vibration of set frequency in approaching/separation.Then, utilize the vibration of this a pair of resonating

arm

10,11, can be as the timing source of constantly source, control signal or derived reference signal etc.

(manufacture method of piezoelectric vibrator)

Next, the manufacture method of the piezoelectric vibrator of present embodiment is described.Fig. 8 is the flow chart of manufacture method of the piezoelectric vibrator of present embodiment.Fig. 9 is the exploded perspective view of wafer body.Below, illustrate that enclosing a plurality of piezoelectric vibration pieces 4 with disk 40 and lid substrate between with disk 50 at basal substrate forms wafer body 60, makes the method for a plurality of piezoelectric vibrators simultaneously by cut-out wafer body 60.In addition, the dotted line M shown in each figure below Fig. 9 is illustrated in to cut off the cut-out line that cuts off in the operation.

The manufacture method of the piezoelectric vibrator of present embodiment mainly has: piezoelectric vibration piece production process (S10), lid substrate disk production process (S20), basal substrate disk production process (S30) and assembling procedure (after the S40).Wherein, piezoelectric vibration piece production process (S10), lid substrate with disk production process (S20) and basal substrate with disk production process (S30) enforcement that can walk abreast.In addition, the manufacture method of the piezoelectric vibrator of present embodiment comprises the manufacture method of covering the packaging part that substrate and basal substrate form by the grafting material anodic bonding.The manufacture method of packaging part mainly has: grafting material forms operation (S24), engages operation (S60) and engages auxiliary material removes operation (S65).

In piezoelectric vibration piece production process (S10), construction drawing 5 is to piezoelectric vibration piece shown in Figure 74.Particularly, at first lambert (Lambert) tcrude ore of crystal is cut into slices, obtain certain thickness disk with set angle.Next, this disk is ground and after the roughing, removes affected layer with etching, polish processing such as (polish) mirror ultrafinish afterwards, obtain the disk of set thickness.Next, after disk suitable processing such as implement cleaned, utilize photoetching technique this disk to be carried out composition, and carry out the film forming and the composition of metal film, form excitation electrode 15,

extraction electrode

19,20, assembling

electrode

16,17, weight metal film 21 with the outer shape of piezoelectric vibration piece 4.In view of the above, can make a plurality of piezoelectric vibration pieces 4.Next, carry out the coarse adjustment of the resonance frequency of piezoelectric vibration piece 4.This is that coarse adjustment film 21a irradiating laser by counterweight hammer metal film 21 makes its part evaporation, the weight of resonating arm is changed carry out.

Use in the disk production process (S20) at the lid substrate, making the back becomes the lid substrate disk 50 that covers substrate 3.At first, the discoideus lid substrate that will be made by soda lime glass is with disk 50, and attrition process is to set thickness and after cleaning, and utilizes etching etc. to remove the most surperficial affected layer (S21).Next, form recess 3a (S22) that a plurality of cavitys use with basal substrate with the composition surface of disk 40 with disk 50 at the lid substrate.The formation of recess 3a was undertaken by add hot press-formed or etching and processing etc.Next, grind and the composition surface (S23) of basal substrate with disk 40.

Next, using the composition surface of disk 40 to form grafting material 35 (S24) with basal substrate.Grafting material 35 can also be formed at the total inner surface of recess 3a except being formed on and the composition surface of basal substrate with disk 40.In view of the above, do not need grafting material 35 is carried out composition, can reduce manufacturing cost.The formation of grafting material 35 can utilize film build methods such as sputter or CVD to carry out.In addition, carry out grinding step (S23) before, therefore guarantee the flatness on the surface of grafting material 35, can realize and stable engage of basal substrate with disk 40 owing to form operation (S24) at grafting material.

Face becomes the basal substrate disk 40 of basal substrate 2 after basal substrate is used in the disk production process (S30), made.At first, the discoideus basal substrate that will be made by soda lime glass is with disk 40, and attrition process is to set thickness and after cleaning, and utilizes etching etc. to remove the most surperficial affected layer (S31).Next, carry out forming operation (S32) with the through electrode that disk 40 forms a pair of through

electrode

32,33 at basal substrate.Through

electrode

32,33 is for example by forming through

holes

30,31 at basal substrate with disk 40, sintering and forming behind the electric conducting material such as filling silver paste through

hole

30,31 in.Next, form the circuitous electrode forming process (S33) of the

circuitous electrode

36,37 that is electrically connected with a pair of through

electrode

32,33.

Yet, need to consider to form make a

circulation electrode

36,37 and grafting material 35 with the surface of disk 40 at basal substrate.But, in this case, forming

circuitous electrode

36,37 back formation grafting materials 35, manufacturing time is elongated.In addition, in order to prevent diffusion between the two, need the limit to cover

circuitous electrode

36,37 limits and form grafting material 35, it is complicated that manufacturing process becomes.Relative with it, in the present embodiment, form grafting material 35 with disk 50 at the lid substrate, form

circuitous electrode

36,37 at basal substrate with disk 40.In view of the above, can walk abreast and implement the make a circulation formation of

electrode

36,37 and the formation of grafting material 35, can shorten manufacturing time.In addition, owing to the diffusion that needn't consider between the two, therefore can simplify manufacturing process.

In assembly process (S40), a plurality of piezoelectric vibration pieces 4 of making are bonded on the upper surface of basal substrate with the

circuitous electrode

36,37 of disk 40.Particularly, at first, on a pair of

circuitous electrode

36,37, form salient point B such as gold respectively.Next, the base portion 12 of piezoelectric vibration piece 4 is put on salient point B, the limit with salient point B both be heated to the fixed temperature limit with piezoelectric vibration piece 4 by being pressed in salient point B.In view of the above, so that the state that the resonating

arm

10,11 of piezoelectric vibration piece 4 floats with the upper surface of disk 40 from basal substrate, base portion 12 mechanically is fixed in salient point B.In addition, assembling

electrode

16,17 and

circuitous electrode

36,37 are in the state of electrical connection.

In superimposed operation (S50), to finishing the basal substrate disk 40 of assembling piezoelectric vibration piece 4, superimposed lid substrate disk 50.Particularly, the limit is an index with not shown reference mark etc., and the limit is registered to correct position with two disks 40,50.In view of the above, be assemblied in basal substrate with the piezoelectric vibration piece 4 of disk 40, be in and be contained in by the lid substrate with the recess 3a of disk 50 and basal substrate with the state in the cavity C of disk 40 encirclements.

(joint operation)

Figure 10 and Figure 11 are the key diagrams that engages operation, are the partial enlarged drawings along the cross section of the C-C line of Fig. 9.

Shown in Figure 10 (a), in engaging operation (S60), at the upper surface configuration joint auxiliary material 72 of lid substrate with disk 50.Engage auxiliary material 72 by forming with the material that produces the anodic bonding reaction between the disk 50 at joint auxiliary material 72 and lid substrate.Particularly, grafting material is to engage the superimposed and heating of auxiliary material and glass and electrode, be that anode, electrode side are that negative electrode is when applying voltage simultaneously to engage the auxiliary material side, the sodium ion that glass is contained moves to negative electrode, produces the material of negative electrical charge layer in the joint auxiliary material side of glass.More specifically, as the material that engages auxiliary material 72, can adopt the film or the block of material of aluminium (Al), silicon (Si) block of material, chromium (Cr), carbon (C) etc.In addition, block of material is meant the member of the substrate shape with suitable thickness.In the present embodiment shown in Figure 10 (a), adopt aluminium foil as engaging auxiliary material 72.Handle easy and cheap aluminium foil by adopting, can suppress the increase of manufacturing cost.

In engaging operation (S60), at the upper surface configuration joint auxiliary material 72 of lid substrate with disk 50, and in the lower surface configured electrodes 71 of basal substrate with disk 40.Electrode 71 is formed by stainless steel or carbon (C) etc.Next, use anchor clamps (not shown) to push and engage between auxiliary material 72 and the electrode 71, wafer body 60 is exerted pressure.Next, each anchor clamps is put into wafer body 60 inside of anodic bonding apparatus.Next, the inside with anodic bonding apparatus remains on both fixed temperatures, heated wafer body 60.Connect DC power supply 70 simultaneously, make to engage auxiliary material 72, wafer body 60 is applied voltage for anode, electrode 71 are negative electrode.Therefore the joint auxiliary material 72 of present embodiment can not produce voltage drop in the inside that engages auxiliary material 72 owing to is formed by the less aluminium of resistance value, can apply uniform voltage with the whole surface of disk 50 to covering substrate.

In view of the above, as shown in figure 11, the lid substrate moves to grafting material 35 with the sodium ion that glass material contained of disk 50.Interlock therewith, basal substrate also moves to electrode 71 with the sodium ion that glass material contained of disk 40, produces electric current.Therefore, in grafting material 35 one sides of basal substrate, form the negative electrical charge layer that lacks sodium ion with disk 40.Produce electrostatic attraction between this negative electrical charge layer and grafting material 35, basal substrate uses the interface F2 of disk 40 and grafting material 35 by anodic bonding.In addition, also form the negative electrical charge layer of shortage sodium ion with joint auxiliary material 72 sides of disk 50 at the lid substrate.Therefore, the lid substrate with disk 50 and the interface F1 that engages auxiliary material 72 also by anodic bonding.

On the other hand, in the modified embodiment of the present embodiment shown in Figure 10 (b), adopt the Si film as engaging auxiliary material 76.In addition, form the Si film, the Si film can be handled as engaging auxiliary material 76 by surface at the joint assisting base plate of making by insulating material such as glass 77.In this variation, use anchor clamps to push and engage between assisting base plate 77 and the electrode 71, wafer body 60 is exerted pressure.And, connect DC power supply 70 in the Si symphysis, and electrode 71 between apply voltage.In addition, if form the thickness of Si film thicker, then the resistance value of Si film diminishes, and therefore can be suppressed at the voltage drop of Si film inside.In this variation too, can be with basal substrate with anodic bonding between disk 40 and the grafting material 35.But, in variation, be the joint auxiliary material 76 that are in the state affixed with engaging assisting base plate 77, with the lid substrate with disk 50 anodic bonding.

(engage auxiliary material and remove operation)

Shown in Figure 12 (a), in engaging auxiliary material removal operations (S65), remove anodic bonding at the joint auxiliary material 72 of lid substrate with disk 50.In the present embodiment, because therefore the upper surface anodic bonding aluminium foil of using disk 50 at the lid substrate removes this aluminium foil by etching as engaging auxiliary material 72.Aluminium foil can use the etching gas of halogen to carry out etching.Because the thickness of aluminium foil is tens μ m, and is thinner, therefore just can remove aluminium foil with the etching of short time.

On the other hand, in the modified embodiment of the present embodiment shown in Figure 12 (b),,, also be connected with and engage assisting base plate 77 except engaging the Si film of auxiliary material 76 at the upper surface of lid substrate with disk 50.Therefore, in this variation, remove joint auxiliary material 76 and engage assisting base plate 77 by grinding.Particularly, use milling drum device etc. to be ground to the top layer of the lid substrate shown in the dotted line 79 with disk 50.According to grinding,, also can remove joint auxiliary material 76 and engage assisting base plate 77 in the short time even under the situation that is connected with thicker joint assisting base plate 77.

In addition, in the present embodiment shown in Figure 12 (a), also can utilize grinding or grinding to remove aluminium foil.

Externally in the electrode forming process (S70), at the back side formation

outer electrode

38,39 of basal substrate with disk.

Preferably carry out air-breathing operation herein.Particularly, to being pre-formed in the gettering material irradiating laser of the inner surface of cavity.In view of the above, because therefore gettering material evaporation and combine with oxygen in the cavity can make the vacuum degree in the cavity improve.As gettering material, can adopt chromium (Cr) or aluminium (Al) etc.

In fine setting operation (S80), the frequency of each piezoelectric vibrator 1 is finely tuned.Particularly, at first be continuously applied set voltage, make piezoelectric vibration piece 4 vibration and measuring frequencies from outer electrode 38,39.Under this state,, make the fine setting film 21b evaporation of weight metal film 21 from the external irradiation laser of basal substrate with disk 40.In view of the above, because the decline of the weight of the front of a pair of resonating

arm

10,11, so the frequency of piezoelectric vibration piece 4 rises.In view of the above, can finely tune, be received in the scope of nominal frequency the frequency of piezoelectric vibrator 1.

In cutting off operation (S90), cut off the wafer body 60 that has engaged along cutting off line M.Particularly, at first paste the UV adhesive tape with the surface of disk 40 at the basal substrate of wafer body 60.Next, use disk 50 sides along cutting off line M irradiating laser (line) from the lid substrate.Next, press cutoff tool along cutting off line M, cut off wafer body 60 (disconnection) from the surface of UV adhesive tape.Afterwards, irradiation UV and peel off the UV adhesive tape.In view of the above, wafer body 60 can be separated into a plurality of piezoelectric vibrators.In addition, also can utilize methods such as section in addition to cut off wafer body 60.

Check in the operation (S100) that in electrical characteristics resonance frequency or resonant resistance value, the actuator electrical flat characteristic (the exciting electric power correlation of resonance frequency and resonant resistance value) etc. of mensuration piezoelectric vibrator 1 are also checked.In addition, also check insulation resistance property etc. in the lump.At last, carry out the visual examination of piezoelectric vibrator 1, final checking of dimensions or quality etc.

As mentioned above, piezoelectric vibrator 1 is finished.

As above detailed description, the manufacture method of the packaging part of present embodiment has the anodic bonding operation, at the inner surface formation grafting material 35 of lid substrate with disk 50, be configured as the joint auxiliary material 72 of anode at the lid substrate with the outer surface of disk 50 afterwards, be configured as the electrode 71 of negative electrode and apply voltage at the outer surface of basal substrate with disk 40; Engage auxiliary material 72 by in the anodic bonding operation, forming with the material that produces the anodic bonding reaction between the disk 50 at joint auxiliary material 72 and lid substrate.

According to this structure, by between joint auxiliary material 72 and electrode 71, applying voltage, engage auxiliary material 72 and covering substrate generation anodic bonding reaction between the outer surface of disk 50, interlock therewith, grafting material 35 and basal substrate are used between the inner surface of disk 40 by anodic bonding.In view of the above, even when adopting the bigger grafting material 35 of resistance value, also can apply uniform voltage, can make between grafting material 35 and the basal substrate usefulness inner surface of disk 40 anodic bonding reliably to the whole surface of grafting material 35.In addition, can set arbitrarily owing to engage the resistance value of auxiliary material 72, therefore by adopting the less joint auxiliary material 72 of resistance value, can with under the identical condition of the situation that adopts the less grafting material of resistance value, carry out anodic bonding.If adopt resistance value to connect DC power supply 70 than the little joint auxiliary material 72 of grafting material 35 and engaging auxiliary material 72 at least, then compare with the situation that is connected DC power supply at grafting material 35, can carry out anodic bonding with mild condition (low-voltage).

In addition, in the present embodiment, adopt grafting material 35 to constitute by Si is film formed.

Because the sheet resistance of Si film is bigger, therefore if the grafting material that forms thinner thickness by Si then resistance value can increase, but according to present embodiment, can make between grafting material 35 and the basal substrate usefulness inner surface of disk 40 anodic bonding reliably.And as shown in Figure 3, expose under the situation in the outside of the packaging part 9 behind the joint even be used in the grafting material 35 of anodic bonding, because the grafting material 35 that is formed by Si can not corrode, therefore can prevent the air-tightness decline of packaging part 9.

(oscillator)

Next, an execution mode of oscillator involved in the present invention is described with reference to Figure 13.

The oscillator 100 of present embodiment constitutes piezoelectric vibrator 1 oscillator that is electrically connected to integrated circuit 101 as shown in figure 13.This oscillator 100 possesses the substrate 103 of the electronic unit 102 that capacitor etc. has been installed.At substrate 103 said integrated circuit 101 that oscillator is used is installed, is attached with piezoelectric vibrator 1 at this integrated circuit 101.These electronic units 102, integrated circuit 101 and piezoelectric vibrator 1 are electrically connected respectively by not shown wiring pattern.In addition, each component parts comes molded (mould) by not shown resin.

In the oscillator 100 that constitutes like this, when piezoelectric vibrator 1 is applied voltage, piezoelectric vibration piece 4 vibrations in this piezoelectric vibrator 1.Piezoelectric property by piezoelectric vibration piece 4 is had is converted to the signal of telecommunication with this vibration, inputs to integrated circuit 101 in signal of telecommunication mode.The signal of telecommunication by 101 pairs of inputs of integrated circuit carries out various processing, exports in the mode of frequency signal.Thereby piezoelectric vibrator 1 works as oscillator.

In addition, set the structure of integrated circuit 101 according to demand selectively, RTC (real-time clock) module etc. for example, can add outside the function of clock and watch with single function oscillator etc., can also add the work date or the moment of this equipment of control or external equipment, the function of the moment or calendar etc. perhaps is provided.

As mentioned above, oscillator 100 according to present embodiment, owing to comprise basal substrate 2 and cover substrate 3 quilts anodic bonding reliably, guarantee airtight in the cavity C reliably, the high-quality piezoelectric vibrator 1 that rate of finished products improves, therefore oscillator 100 itself is stably guaranteed conduction too, can improve the reliability of work, seeks high quality.And in addition, can obtain high-precision frequency signal steady in a long-term.

(electronic equipment)

Then, with reference to Figure 14, describe with regard to an execution mode of electronic equipment of the present invention.As electronic equipment, for example understand mobile information apparatus 110 in addition with above-mentioned piezoelectric vibrator 1.

The mobile information apparatus 110 of initial present embodiment is for example with headed by the portable phone, develops and improved the equipment of wrist-watch of the prior art.Outer appearnce is similar to wrist-watch, being equivalent to the part configuration LCD of literal dish, can show the current moment etc. on this picture.In addition, when the communication equipment, take off from wrist, the loud speaker and the microphone of the inside part by being built in watchband can carry out and same the communicating by letter of the portable phone of prior art.But, compare with existing portable phone, obviously small-sized and light weight.

Below, the structure of the mobile information apparatus 110 of present embodiment is described.As shown in figure 14, this mobile information apparatus 110 possesses the power supply unit 111 of piezoelectric vibrator 1 and power supply usefulness.Power supply unit 111 for example is made of lithium secondary battery.Carry out the control part 112 of various controls, the counting that carries out constantly etc. timing portion 113, be connected in parallel with this power supply unit 111 with the outside Department of Communication Force 114 that communicates, the voltage detection department 116 that shows the display part 115 of various information and detect the voltage of each function portion.And, by power supply unit 111 each function portion is powered.

Each function portion of control part 112 control carry out the action control of the whole system of the measurement of the transmission of voice data and reception, current time or demonstration etc.In addition, control part 112 possess write-in program in advance ROM, read the program that is written to this ROM and the CPU that carries out and the RAM that uses as the service area of this CPU etc.

Timing portion 113 possesses piezoelectric vibrator 1 and the built-in integrated circuit of oscillating circuit, register circuit, counter circuit and interface circuit etc.Piezoelectric vibration piece 4 vibration when piezoelectric vibrator 1 is applied voltage, by the piezoelectric property that crystal had, this vibration is converted to the signal of telecommunication, is input to oscillating circuit in the mode of the signal of telecommunication.The output of oscillating circuit is counted by register circuit sum counter circuit by binaryzation.Then,, carry out the transmission and the reception of signal, show current time or current date or calendar information etc. at display part 115 with control part 112 by interface circuit.

Department of Communication Force 114 has and traditional portable phone identical functions, possesses wireless part 117, acoustic processing portion 118, switching part 119, enlarging section 120, sound I/O portion 121, telephone number input part 122, ringtone generating unit 123 and call control memory portion 124.

By antenna 125, the exchange of various data such as voice data is received and dispatched in wireless part 117 and base station.118 pairs of voice signals from wireless part 117 or enlarging section 120 inputs of acoustic processing portion are encoded and are decoded.Enlarging section 120 will be amplified to set level from the signal of

acoustic processing portion

118 or 121 inputs of sound I/O portion.Sound I/O portion 121 is made of loud speaker or microphone etc., enlarges ringtone or is talked about sound, perhaps with the sound set sound.

In addition, ringtone generating unit 123 response generates ringtone from the calling of base station.Switching part 119 only when incoming call, switches to ringtone generating unit 123 by the enlarging section 120 that will be connected acoustic processing portion 118, and the ringtone that generates in ringtone generating unit 123 exports sound I/O portion 121 to via enlarging section 120.

In addition, call control memory portion 124 deposits with the calling of communicating by letter and comes the relevant program of electric control.In addition, telephone number input part 122 possesses for example 0 to 9 number button and other key, by pushing these number button etc., the telephone number of input conversation destination etc.

The voltage that voltage detection department 116 applies in each the function portion by 111 pairs of control parts of power supply unit, 112 grades is during less than set value, detects notice control part 112 after its voltage drop.At this moment set magnitude of voltage is as the voltage that makes the required minimum of Department of Communication Force 114 operating stablies and predefined value, for example, and about 3V.Receive that from voltage detection department 116 control part 112 of the notice of voltage drop forbids the action of wireless part 117, acoustic processing portion 118, switching part 119 and ringtone generating unit 123.Particularly, the action that stops the bigger wireless part of power consumption 117 is essential.And, the out of use prompting of display part 115 display communication portions 114 owing to the deficiency of battery allowance.

That is, by voltage detection department 116 and control part 112, can forbid the action of Department of Communication Force 114, and do prompting at display part 115.This demonstration can be word message, but as showing more intuitively, also can beat " * (fork) " mark in the phone icon on the top of the display surface that is shown in display part 115.

In addition, block portion 126, can stop the function of Department of Communication Force 114 more reliably by the power supply that possesses the power supply that can block the part relevant selectively with the function of Department of Communication Force 114.

As mentioned above, mobile information apparatus 110 according to present embodiment, owing to comprise basal substrate 2 and cover substrate 3 quilts anodic bonding reliably, guarantee airtight in the cavity C reliably, the high-quality piezoelectric vibrator 1 that rate of finished products improves, therefore mobile information apparatus itself is stably guaranteed conduction too, can improve the reliability of work, seeks high quality.And in addition, can show high accuracy clock information steady in a long-term.

(radio wave clock)

Then, with reference to Figure 15, describe with regard to an execution mode of radio wave clock of the present invention.

As shown in figure 15, the radio wave clock 130 of present embodiment possesses the piezoelectric vibrator 1 that is electrically connected to filtering portion 131, is to receive to comprise the standard wave of clock information, and has the clock and watch of the function that is modified to the correct moment automatically and is shown.

In Japan, at Fukushima county (40kHz) and Saga county (60kHz) dispatching station (forwarding office) that sends standard wave is arranged, send standard wave respectively.The such long wave of 40kHz or 60kHz have the character propagated along the face of land concurrently and on ionosphere and the face of land while reflecting the character of propagating, so its spread scope is wide, and in Japan whole by two above-mentioned dispatching stations coverings.

Below, the functional structure of radio wave clock 130 is elaborated.

Antenna 132 receives the standard wave of 40kHz or 60kHz long wave.The time information AM that the standard wave of long wave will be called as timing code is modulated to the carrier wave of 40kHz or 60kHz.The standard wave of the long wave that is received is amplified by amplifier 133, by filtering portion 131 filtering with a plurality of piezoelectric vibrators 1 and tuning.Piezoelectric vibrator 1 in the present embodiment possesses the quartzy vibrator portion 138,139 of the resonance frequency of 40kHz identical with above-mentioned carrier frequency and 60kHz respectively.

And the signal of filtered set frequency comes detection and demodulation by detection, rectification circuit 134.Then, extract timing code out, count by CPU136 via waveform shaping circuit 135.In CPU136, read the information in current year, accumulation day, week, the moment etc.The message reflection that is read demonstrates time information accurately in RTC137.

Because carrier wave is 40kHz or 60kHz, so quartzy vibrator portion 138,139 preferably has above-mentioned tuning-fork-type structural vibrations device.

In addition, though above-mentioned explanation by in Japan example shown, the standard electric wave frequency of long wave is different in overseas.For example, use the standard wave of 77.5KHz in Germany.So,, also need the piezoelectric vibrator 1 of the frequency different with Japanese situation even under the situation of portable equipment of will be in overseas also can corresponding radio wave clock 130 packing into.

As mentioned above, radio wave clock 130 according to present embodiment, owing to comprise basal substrate 2 and cover substrate 3 quilts anodic bonding reliably, guarantee airtight in the cavity C reliably, the high-quality piezoelectric vibrator 1 that rate of finished products improves, therefore radio wave clock itself is stably guaranteed conduction too, can improve the reliability of work, seeks high quality.And in addition, high accuracy was counted the moment steadily in the long term.

In addition, technical scope of the present invention is not limited to above-mentioned execution mode, is included in the scope that does not break away from content of the present invention the various changes that above-mentioned execution mode is applied.That is, the concrete material that execution mode exemplified or layer structure etc. only is an example, can suitably change.

For example, in the above-described embodiment,, but also can adopt Al as the material employing Si film of grafting material.At this moment, the manufacture method of the packaging part that the application of the invention is related, anodic bonding between the disk reliably with grafting material and basal substrate.In addition, if adopt the material of Al, then the grafting material that is configured in the bottom surface of the recess that covers substrate can be used as gettering material as grafting material.In this case, owing to needn't form the gettering material different, therefore can reduce manufacturing cost with grafting material.

In addition, in the above-described embodiment, adopt Al or Si as the joint auxiliary material, but also can adopt Cr or carbon.When adopting Cr or carbon, even engaging generation anodic bonding reaction between the auxiliary material and first substrate in the anodic bonding operation, the joint auxiliary material can not engage with first substrate yet.Therefore, can omit the joint auxiliary material and remove operation.

In addition, in the above-described embodiment, by using the inner surface of disk to form grafting material at the lid substrate, be configured as the joint auxiliary material of anode afterwards with the outer surface of disk at the lid substrate, dispose negative electrode and apply voltage at the outer surface of basal substrate with disk, the anodic bonding between the inner surface of disk with grafting material and basal substrate, but it is opposite with it, also can form grafting material by use the inner surface of disk at basal substrate, be configured as the joint auxiliary material of anode afterwards with the outer surface of disk at basal substrate, dispose negative electrode and apply voltage at the outer surface of lid substrate, anodic bonding between the inner surface of disk grafting material and lid substrate with disk.

In addition, in the above-described embodiment, use the manufacture method of packaging part of the present invention, enclose piezoelectric vibration piece in the inside of packaging part and make piezoelectric vibrator, but the object beyond also can enclosing piezoelectric vibration piece in the inside of packaging part is made piezoelectric vibrator device in addition.

Claims

1. the manufacture method of a packaging part, the inner surface anodic bonding of the grafting material of the inner surface by will being fixed in first substrate of being made by insulator in advance and second substrate made by insulator is come the manufacturing and encapsulation part, it is characterized in that,

Have the anodic bonding operation, be configured as the joint auxiliary material of anode, at the outer surface configuration negative electrode of described second substrate and apply voltage at the outer surface of described first substrate;

Described joint auxiliary material are formed by the material that produces the anodic bonding reaction in described anodic bonding operation, between described joint auxiliary material and described first substrate.

2. the manufacture method of packaging part according to claim 1 is characterized in that,

Described grafting material is formed by Al, Si film or Si block of material.

3. the manufacture method of packaging part according to claim 1 and 2 is characterized in that,

Described grafting material is formed by the Si film.

4. according to the manufacture method of each described packaging part in the claim 1 to 3, it is characterized in that,

Described joint auxiliary material are formed by Al, Si block of material, Cr or C.

5. according to the manufacture method of each described packaging part in the claim 1 to 3, it is characterized in that,

Described joint auxiliary material are aluminium foils.

6. according to the manufacture method of each described packaging part in the claim 1 to 5, it is characterized in that,

After described anodic bonding operation, has the operation of removing described joint auxiliary material.

7. the manufacture method of a piezoelectric vibrator is characterized in that,

The manufacture method of each described packaging part in using claim 1 to 6 and piezoelectric vibrator by with piezoelectric vibration piece vacuum seal, is made in the inside of the described packaging part made.

8. an oscillator is characterized in that, the piezoelectric vibrator of being made by the described manufacture method of claim 7 is electrically connected with integrated circuit as oscillator.

9. an electronic equipment is characterized in that, the piezoelectric vibrator of being made by the described manufacture method of claim 7 is electrically connected with timing portion.

10. a radio wave clock is characterized in that, the piezoelectric vibrator of being made by the described manufacture method of claim 7 is electrically connected with filtering portion.