CN101989042A - Method of manufacturing multi-gray scale photomask and pattern transfer method - Google Patents
Method of manufacturing multi-gray scale photomask and pattern transfer method Download PDFInfo
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- CN101989042A CN101989042A CN2010102431916A CN201010243191A CN101989042A CN 101989042 A CN101989042 A CN 101989042A CN 2010102431916 A CN2010102431916 A CN 2010102431916A CN 201010243191 A CN201010243191 A CN 201010243191A CN 101989042 A CN101989042 A CN 101989042A
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- 238000000034 method Methods 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000002834 transmittance Methods 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims description 111
- 238000010023 transfer printing Methods 0.000 claims description 57
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 230
- 230000003287 optical effect Effects 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 238000004380 ashing Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 239000012467 final product Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a method of manufacturing a multi-gray scale photomask and a pattern transfer method. The multi-gray scale photomask is provided with a preset transfer pattern which comprises a light transmitting part, a light shielding part and a semi-light-transmitting part which transmits one part of the exposure light. The preset pattern is transferred for aiming at a resist film which is formed on a transferred member to be etched so the resist film forms a resist pattern. The resist film becomes a mask in etching, wherein, the manufacturing method comprises the following steps: mastering the resist characteristic of the resist used by the resist film relatively to the exposure light; determining the actual transmittance of the semi-light-transmitting part relatively to the exposure light according to the resist characteristic; and performing patter composition for the light shading film formed on a transparent substrate at least according to the actual transmittance, thereby forming the semi-light-transmitting part.
Description
Technical field
The manufacture method of the multi-gray scale photomas that the present invention relates in photo-mask process, use and pattern transfer-printing method.
Background technology
In the past, when electronic equipments such as manufacturing liquid crystal indicator, adopted photoetching process.In photo-mask process, use photomask to being formed at the resist film transfer printing predetermined pattern for the treatment of on the etched transfer printing body, this resist film is developed and formation resist pattern, then this resist pattern is carried out the etching of transfer printing body as mask.
Adopt multi-gray scale photomas as photomask, the resist film on the transfer printing body is exposed, formation has differential resist pattern, and this technology is by known (with reference to TOHKEMY 2006-268035 communique).About except light shielding part, transmittance section, also having the multi-gray scale photomas of semi light transmitting part of a part of transmission that makes exposure light, can change the light quantity that the exposure light of this multi-gray scale photomas is crossed in transmission according to the position, on transfer printing body, form the residual film value 1st resist pattern different thus with the position.Then, make the whole minimizing of the 1st resist pattern, can form the 2nd resist pattern thus by utilizing ashing.Thus, reduce the number of times of the photo-mask process in the manufacturing process, can reduce the quantity of the photomask that in this operation, uses simultaneously, so very useful.On the other hand, in the manufacture method of this multi-gray scale photomas, in order to form the resist pattern of anticipated shape, determining etc. of the pattern form of semi light transmitting part, membranous (material of film) that form semi light transmitting part, thickness is very important.
Using multi-gray scale photomas to carry out under the situation of photo-mask process, the shape control meeting of the 1st resist pattern that forms produces considerable influence to controlling as the live width of the film etching of mask with the 2nd resist pattern of using in the subsequent processing, however, but the shape of the 1st resist pattern control often still rule of thumb carry out.Especially, the factor that the film etching of the shape of resist pattern is produced considerable influence is the live width and the film thickness value of this resist pattern.Therefore, when the resist film after the exposure is developed, be intended to keep the residual film of resist (obtaining the residual film value of resist of desired extent) of expection, carry out etched condition enactment repeatedly, determine top condition in the moment that obtains the expection live width.
But,, have the problem of repeatability and stability deficiency and spended time when in each etching work procedure, determining under the situation of top condition by carrying out condition enactment repeatedly.And, diminish the repeatability and the stability of photo-mask process like this, so also exist stability and manufacturing cost to cause dysgenic problem to electronic equipments such as liquid crystal indicators.
Summary of the invention
The present invention In view of the foregoing proposes, and one of its purpose is, a kind of manufacture method and pattern transfer-printing method of multi-gray scale photomas is provided, and can accurately control the shape of resist pattern in photo-mask process, improves repeatability and stability.
A manufacture method that mode is a multi-gray scale photomas of the present invention, this multi-gray scale photomas has the predetermined pattern transferring of the semi light transmitting part of a part of transmission that comprises transmittance section, light shielding part and make exposure light, at the resist film that is formed on the transfer printing body of wanting etched processing, the transfer printing predetermined pattern, make resist film constitute the resist pattern, this resist pattern becomes the mask in the etching and processing, wherein, manufacture method comprises the steps: to grasp the resist characteristic of the employed resist of resist film with respect to exposure light; Determine the actual effect transmissivity of semi light transmitting part according to the resist characteristic for exposure light; And at least the photomask that is formed on the transparency carrier is carried out composition according to the actual effect transmissivity, form semi light transmitting part thus.
According to this structure, grasp the characteristic of the resist film that in photo-mask process, uses in advance, according to the shape of the resist pattern after consider developing and the actual effect transmissivity of definite semi light transmitting part, make multi-gray scale photomas, so can make the multi-gray scale photomas that accurately to control the shape of resist pattern.Thus, can improve the repeatability and the stability of photo-mask process.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, the resist characteristic utilizes the resist family curve to stipulate, this resist family curve exposure of light and resist relation between the film amount of subtracting with respect to this exposure of representing to expose.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, can be according to the pattern form of determined actual effect transmissivity, semi light transmitting part and the conditions of exposure of exposure machine, determine the film transmissivity of semi light transmitting part, form this semi light transmitting part according to the film transmissivity of semi light transmitting part.According to this structure, can suppress following situation: when actual exposure, actual transmission is crossed the optical transmission rate of semi light transmitting part because the pattern form and the conditions of exposure of semi light transmitting part, relatively actual effect transmissivity and changing.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, can on transparency carrier, utilize following photomask pattern to form semi light transmitting part, the following size of the resolving limit of employed exposure machine when this photomask pattern has the exposure of multi-gray scale photomas.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, can use the semi-transparent film that is formed on the transparency carrier to form semi light transmitting part.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, can be formed at according to transmitted light by semi light transmitting part on the transfer printing body the resist pattern with respect to the initial film thickness of resist film subtract film amount t, determine the actual effect transmissivity of semi light transmitting part.According to this structure, under the situation of using positive corrosion-resisting agent, also has the design that correlationship is easy to carry out photoresist owing to subtracting film amount and exposure.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, can constitute: the semi light transmitting part of multi-gray scale photomas has the 1st semi light transmitting part and the 2nd semi light transmitting part that the actual effect transmissivity differs from one another, and this manufacture method comprises the steps: to determine the target actual effect transmissivity of the 1st semi light transmitting part and the target actual effect transmissivity of the 2nd semi light transmitting part respectively according to the resist characteristic.
In a mode of the manufacture method of multi-gray scale photomas of the present invention, can be formed at resist pattern on the transfer printing body according to transmitted light and subtract film amount t with respect to the initial film thickness of resist film by the 1st semi light transmitting part
1, determine the target actual effect transmissivity of the 1st semi light transmitting part, and be formed at resist pattern on the transfer printing body according to transmitted light and subtract film amount t with respect to the initial film thickness of resist film by the 2nd semi light transmitting part
2, determine the actual effect transmissivity of the 2nd semi light transmitting part.According to this structure, have under the situation that the resist film on the differential transfer printing body exposes being formed at by multi-gray scale photomas, also can make the resist pattern by the exposure of the 1st semi light transmitting part roughly the same with the residual film value of resist pattern by the exposure of the 2nd semi light transmitting part.
A mode of pattern transfer-printing method of the present invention is used the multi-gray scale photomas of making according to above-mentioned any manufacture method, and the resist film on the transfer printing body is exposed, and forms the resist pattern thus on transfer printing body.
A mode of pattern transfer-printing method of the present invention comprises the steps: to form resist film having on the differential transfer printing body, and by using multi-gray scale photomas that the resist film on the transfer printing body is exposed, on transfer printing body, form corrosion-resisting pattern thus, this pattern transfer-printing method uses the multi-gray scale photomas with the 1st semi light transmitting part and the 2nd semi light transmitting part by above-mentioned manufacture method manufacturing, as multi-gray scale photomas, make the residual film value of the resist that is formed on the resist pattern that has on the differential transfer printing body form roughly the same.
According to a mode of the present invention, grasp the characteristic of the resist film that in photo-mask process, uses in advance, according to the shape of the resist pattern after consider developing and the actual effect transmissivity of definite semi light transmitting part, make multi-gray scale photomas, so can make the multi-gray scale photomas that accurately to control the shape of resist pattern.And, use this multi-gray scale photomas to carry out photo-mask process, can improve repeatability and stability thus.
Description of drawings
Fig. 1 is the figure of an example of the step of manufacturing of explanation multi-gray scale photomas.
Fig. 2 is that explanation uses multi-gray scale photomas to carry out the figure of the situation of photo-mask process.
Fig. 3 is that explanation uses multi-gray scale photomas to carry out the figure of the situation of photo-mask process.
Fig. 4 is the figure that the electronic device manufacturing method of multi-gray scale photomas has been used in explanation.
Fig. 5 is that figure Fig. 4, that used the electronic device manufacturing method of multi-gray scale photomas is accepted in explanation.
Fig. 6 is the figure that an example of the multi-gray scale photomas that is applicable to electronic device manufacturing method is described.
Fig. 7 is the characteristic figure of explanation resist.
Fig. 8 is the configuration of the semi-transparent film of expression and the figure of actual effect transmissivity.
Embodiment
(embodiment 1)
Fig. 2 illustrates and uses multi-gray scale photomas 100 to carry out the situation of photo-mask process, and this multi-gray scale photomas 100 has the predetermined pattern transferring of the semi light transmitting part 104 of a part of transmission that comprises transmittance section 102, light shielding part 103 and make exposure light.Resist film 105 is formed on the transfer printing body 106 that will be implemented etching and processing, by pattern to these resist film 105 transfer printing multi-gray scale photomas 100, can make resist film 105 become the 1st resist pattern 107, the 1 resist patterns 107 thus as the mask in the 1st etching and processing of transfer printing body 106 (with reference to Fig. 2 (A), (B)).Then, utilize ashing treatment to make the 1st resist pattern 107 whole minimizings, become the 2nd resist pattern 108, the 2nd resist pattern 108 is as the mask in the 2nd etching and processing of transfer printing body 106 (with reference to Fig. 2 (C)), use 108 pairs of transfer printing bodies of the 2nd resist pattern 106 to carry out etching then, thus the composition that can expect (with reference to Fig. 2 (D)).
Below, an example of the manufacture method of the multi-gray scale photomas 100 that uses in photo-mask process shown in Figure 2 is described.
At first, in the stage before carrying out photo-mask process (making the stage of (Fig. 2 (A) before) before the multi-gray scale photomas), grasp the resist film 105 employed resist characteristics that are formed on the transfer printing body 106 (with reference to Fig. 1 (step 1)).
About grasping the resist characteristic, can carry out with respect to the film amount that subtracts of the light (exposure light) of irradiation resist film 105 by grasping resist.Specifically, can utilize the exposure of expression exposure light and resist, come regulation resist characteristic with respect to the resist family curve that subtracts the relation between the film amount of this exposure.
One example of the characteristic method for making of simple declaration resist.At first, on substrate, form resist film with predetermined thickness.Then, to this resist film irradiation exposure light, this resist film is developed, obtain resist film after the development then and subtract the film amount with respect to initial film thickness with predetermined degree of exposure.Like this, can by obtain respectively resist with respect to predetermined degree of exposure subtract the film amount, make the resist family curve.But the characteristic method for making of resist is not limited thereto, if can regulation the exposure of light of irradiation resist and this resist with respect to the relation between the film amount of subtracting of this exposure, then can adopt any method.
In addition, when making above-mentioned resist family curve,, can set the condition that the conditions of exposure of the exposure device in the actual photo-mask process is simulated as exposure light.Here, so-called analogue exposure condition is meant that exposure wavelength is approximate, for example has under the situation of wavelength region may at exposure light, refers to the identical situation of exposure wavelength of light intensity maximum.Perhaps, for example also can select with strength ratio is the irradiates light that 1: 1: 1 ratio comprises i line, h line, g line, as the light approximate with actual exposure light.And so-called analogue exposure condition is meant that optical system is approximate, for example refers to that the NA (numerical aperture) of imaging system is roughly the same or σ (degree of coherence) is roughly the same.Here, roughly the same about NA, example with respect to the situation of NA in ± 0.005 scope of actual exposure device.Roughly the same about σ, example with respect to the situation of σ in ± 0.005 scope of actual exposure device.
Then, actual in photo-mask process, resist film 105 developed and form under the situation of the 1st resist pattern 107, determine to subtract film amount t (with reference to Fig. 1 (step 2)) as the resist film 105 of the target in semi light transmitting part 104 zones (zone that is exposed by semi light transmitting part 104).The film amount t that subtracts as the resist film 105 of target gets final product less than the initial film thickness value t0 of this resist film 105, can suitably be set by the implementer.In addition, the film amount that subtracts of the resist film 105 in light shielding part 103 zones can be made as 0, the film amount that subtracts of the resist film in 102 zones, transmittance section is made as t0.
Then, determine the actual effect transmissivity T of the semi light transmitting part 104 of multi-gray scale photomas 100 with respect to exposure light
A(with reference to Fig. 1 (step 3)).In this manual, so-called actual effect transmissivity is meant except the intrinsic transmissivity of film, the transmissivity that also comprises optical condition (optical wavelength, numerical aperture, the σ value etc.) factor of the shape (size or live width (CD:Critical Dimension)) of pattern and exposure machine has referred to reflect the transmissivity (determining to see through the actual effect transmissivity of the light quantity that photomask shone) of actual exposure environment.For example, determining as the actual effect transmissivity of the target of semi light transmitting part and after having fixed the pattern form and the optical condition in the exposure environment of semi light transmitting part, can come the semi light transmitting part of design photomask according to this actual effect transmissivity.
Can use exposure E
LWith exposure E
T, utilize following formula (1) to obtain actual effect transmissivity T
A, this exposure E
LWith obtain in the above-mentioned steps 2 as the target of resist film 105 to subtract film amount t corresponding, exposure E
TIt is the exposure of the exposure light in the photo-mask process.In addition, with resist film 105 subtract the corresponding exposure E of film amount t
LCan obtain exposure E according to the resist family curve of in above-mentioned steps 1, making
TCan be made as the exposure of actual exposure in photo-mask process.
T
A＝E
L/E
T……(1)
Can be by in above-mentioned steps 3, determining the actual effect transmissivity T of semi light transmitting part
A, determine the manufacturing conditions of the semi light transmitting part 104 of multi-gray scale photomas 100.Under the situation that a plurality of semi light transmitting part that the actual effect transmissivity differs from one another are set on the multi-gray scale photomas 100, come to determine respectively actual effect transmissivity T according to the film amount that subtracts of the resist film in each semi-transparent zone
AGet final product.
Then, according to resulting actual effect transmissivity T
AMake multi-gray scale photomas (with reference to Fig. 1 (step 4)).For example, by at least the photomask that is formed on the transparency carrier being carried out composition, be produced on the multi-gray scale photomas 100 of the predetermined pattern transferring of the semi light transmitting part 104 that has a part of transmission that comprises transmittance section 102, light shielding part 103 and make exposure light on the transparency carrier 101 thus.At this moment, the transmissivity of semi light transmitting part 104 is according to the actual effect transmissivity T that obtains in above-mentioned steps 3
ADetermine.
The structure of semi light transmitting part 104 can be by being made as uniform films to semi-transparent film, also can be provided with by forming fine pattern, and this fine pattern obtains the composition that photomask or semi-transparent film carry out below the resolving limit under the conditions of exposure.Utilizing semi-transparent film to form under the situation of semi light transmitting part 104, according to predetermined actual effect transmissivity T
A, determine to realize this actual effect transmissivity T
AFilm transmissivity and pattern form get final product.Form at the fine pattern that utilizes photomask or semi-transparent film under the situation of semi light transmitting part, according to predetermined actual effect transmissivity T
A, determine to realize this actual effect transmissivity T
AFilm transmissivity and pattern form get final product.In addition, about fine pattern, also can form by trickle transmittance section and/or the light shielding part of configuration in by semi-transparent film formed semi light transmitting part.
Can make multi-gray scale photomas by above operation.In the present embodiment, grasp the characteristic of the resist film that in photo-mask process, uses in advance, according to the shape of the resist pattern after consider developing and the actual effect transmissivity T of definite semi light transmitting part
A, make multi-gray scale photomas, so can make the multi-gray scale photomas that accurately to control the resist pattern form.And, in the present embodiment, when on transfer printing body, having the thickness (residual film value) want the resist pattern that obtains after the development, not according to this residual film value, but, carry out the design of multi-gray scale photomas according to subtracting the film value with respect to what the initial film thickness of resist film reduced by development.Like this, by coming design photomask, can easily design according to subtracting the film value.This is because under the situation of using positive corrosion-resisting agent, subtracts to have direct correlationship between film value and the exposure.On the other hand, not necessarily directly related between residual film value and the exposure.
(embodiment 2)
In the present embodiment, specify the actual effect transmissivity T that determines according in the step 3 of above-mentioned Fig. 1
AMake the situation of the semi light transmitting part of multi-gray scale photomas.
When using semi-transparent film to form the semi light transmitting part of multi-gray scale photomas, can be according to the actual effect transmissivity T that obtains in advance
ADetermine the film transmissivity of semi light transmitting part, the membranous and thickness of controlling semi-transparent film is to realize this film transmissivity.In addition, in this manual, the film transmissivity is meant on transparency carrier and forms semi-permeable diaphragm and when constituting semi-transparent zone, with respect to the enough big area of the resolving limit conditions of exposure under (20 μ m * more than the 20 μ m for example, promptly grow and wide respectively is more than the 20 μ m) locate the transmissivity in semi-transparent zone.Therefore, under the enough big situation of the pattern form of the semi light transmitting part of multi-gray scale photomas, as " actual effect transmissivity
The film transmissivity of semi light transmitting part ", the membranous and thickness that can control semi-transparent film comes design photomask.
On the other hand, under the situation of the pattern form of semi light transmitting part less (area or width are small), preferably consider the pattern form of semi light transmitting part and the optical condition of exposure light etc., make the film transmissivity reflection actual effect transmissivity T of semi light transmitting part
AThis is because when the pattern form of semi light transmitting part diminished, because the influence of the exposure diffraction of light that produces in the end of the pattern of this semi light transmitting part, the transmissivity of semi light transmitting part changed when actual exposure.That is, when using semi-transparent film to form the semi light transmitting part of photomask, if by controlling membranous and thickness is set at the film transmissivity of semi light transmitting part and actual effect transmissivity T
AIdentical value then according to optical conditions such as the pattern form of semi light transmitting part and exposure light wavelengths, can not obtain to want the actual effect transmissivity T that obtains sometimes when actual exposure
AIn this case, cause the film amount that subtracts of the 1st resist pattern to be different from the predetermined film amount t that subtracts.
Therefore, according to top described, according to the actual effect transmissivity T that obtains in advance
A, the pattern form of semi light transmitting part and exposure machine conditions of exposure determine the film transmissivity of semi light transmitting part, and according to this film transmissivity formation semi light transmitting part, can suppress following situation thus: actual pattern form and the conditions of exposure that sees through the optical transmission rate of semi light transmitting part owing to semi light transmitting part, with respect to the actual effect transmissivity T that wants to obtain
A(make the transmissivity and the actual effect transmissivity T that wants to obtain of the transmitted light of actual transmission and change
AApproximate).Determine that the operation of the film transmissivity of semi light transmitting part can determine actual effect transmissivity T in above-mentioned Fig. 1
ACarry out after (after the step 3).
Usually, the pattern of semi light transmitting part is trickle more or the exposure light wavelength is long more, and then than the film transmissivity of semi light transmitting part, the light intensity distributions of the transmitted light of actual transmission is poor more.Therefore, in the multi-gray scale photomas of wanting to make, under the less situation of the pattern form of semi light transmitting part, effective and efficient manner be set for make the semi-transparent film that forms in the semi light transmitting part the film transmissivity than the actual effect transmissivity T that obtains in advance
AHigh.
In addition, when under the less situation of the pattern form of semi light transmitting part, determining the film transmissivity of this semi light transmitting part, correlationship between film transmissivity in the predetermined pattern shape of grasp semi light transmitting part and the actual effect transmissivity corresponding with this film transmissivity is determined according to the correlationship of being grasped.For example, can grasp film transmissivity in the pattern form of semi light transmitting part and the correlationship between the actual effect transmissivity by carrying out following steps, described step comprises: the test mask that is formed with the presumptive test pattern is carried out test exposure, utilize image unit to obtain the transmitted light pattern of this test mask, obtain the transmitted light pattern data according to the transmitted light pattern that is obtained; Obtain the actual effect transmissivity of test pattern under the conditions of exposure according to this transmitted light pattern data.Thus, can determine the film transmissivity of semi light transmitting part, and determine to form membranous, the thickness of this semi light transmitting part according to the pattern form of resulting actual effect transmissivity and semi light transmitting part.And, in the step that obtains the transmitted light pattern data, use has the test mask of a plurality of test patterns, this test pattern has light shielding part, transmittance section and semi light transmitting part, and the pattern form of semi light transmitting part, any one semi light transmitting part characteristic difference in the membranous or thickness of formation semi light transmitting part, according to a plurality of transmitted light pattern datas that obtain by a plurality of test masks, the correlationship of the characteristic of grasp semi light transmitting part and the actual effect transmissivity corresponding with the characteristic of this semi light transmitting part, can determine to form the membranous of semi light transmitting part reliably according to the pattern form and the resulting actual effect transmissivity of semi light transmitting part thus, thickness.
And, the relation of semi light transmitting part characteristic such as the pattern form of double light-transmissive film, membranous, thickness and the actual effect transmissivity corresponding with this semi light transmitting part characteristic is made database in advance, according to the pattern form of this database, semi light transmitting part and the actual effect transmissivity T that obtains in advance
ACarry out emulation, can determine the film transmissivity of semi light transmitting part thus.For example, to having light shielding part, transmittance section and semi light transmitting part, and the pattern form of semi light transmitting part, form the different a plurality of test masks of any one semi light transmitting part characteristic in the membranous or thickness of this semi light transmitting part, carry out test exposure, utilize image unit to obtain the transmitted light pattern of these test masks.Obtain the transmitted light pattern data according to the transmitted light pattern that gets access to then, according to the actual effect transmissivity under this transmitted light pattern data acquisition conditions of exposure, can make database to the characteristic of semi light transmitting part and the actual effect transmissivity corresponding according to fixing rule thus with it.Thus, can come promptly to determine to form the membranous and thickness of semi light transmitting part according to the pattern form and the resulting actual effect transmissivity of semi light transmitting part.
(embodiment 3)
In the present embodiment, the manufacture method of the multi-gray scale photomas with the 1st semi light transmitting part that the actual effect transmissivity differs from one another and the 2nd semi light transmitting part and use this multi-gray scale photomas to carry out the situation of photo-mask process is described.
Fig. 3 illustrates and uses multi-gray scale photomas 200 to carry out the situation of photo-mask process, and this multi-gray scale photomas 200 has the 1st semi light transmitting part 204a and the 2nd semi light transmitting part 204b that transmittance section 202, light shielding part 203, actual effect transmissivity differ from one another.Below, an example of the manufacture method of the multi-gray scale photomas 200 that uses in the photo-mask process shown in Fig. 3 (A)～(C) is described.And, be described as follows situation in the following description, promptly, have on the differential transfer printing body 206 resist film 205 of formation, the thickness that make transmitted light by the 1st semi light transmitting part 204a be formed at the thickness of the 1st resist pattern 207 on transfer printing body 206 differential, to be formed at the 1st resist pattern 207 on the transfer printing body 206 with transmitted light by the 2nd semi light transmitting part 204b forms roughly the same.
At first, step 1～step 3 by above-mentioned Fig. 1, (step 1), that determines resist film 205 then subtracts film amount (step 2), determines the 1st semi light transmitting part 204a and the 2nd semi light transmitting part 204b actual effect transmissivity T with respect to exposure light respectively to grasp the resist characteristic of resist film 205
A(step 3).That determines the 1st semi light transmitting part here, subtracts film value t
1With the 2nd semi light transmitting part subtract film value t
2, so that the thickness of the resist pattern in the resist pattern in the 1st semi light transmitting part 204a zone and the 2nd semi light transmitting part 204b zone is roughly the same after development.Under situation shown in Figure 3, owing to the 1st semi light transmitting part 204a is set having differential part, so t
1＜t
2What specifically, make the 2nd semi light transmitting part subtracts film value t
2Subtract film value t than the 1st semi light transmitting part
1The thickness (highly) of the differential part of big transfer printing body 206 is so much.
Then, subtract film value t according to the 1st semi light transmitting part 204a
1With the 2nd semi light transmitting part 204b subtract film value t
2, determine the actual effect transmissivity T of the 1st semi light transmitting part 204a respectively
AActual effect transmissivity T with the 2nd semi light transmitting part 204b
AThen, can be according to resulting actual effect transmissivity T
A, make multi-gray scale photomas 200 (step 4).The film transmissivity of the 1st semi light transmitting part 204a of multi-gray scale photomas 200 and the film transmissivity of the 2nd semi light transmitting part 204b are respectively according to resulting actual effect transmissivity T
ADetermine.In addition, when under the situation of a plurality of semi light transmitting part that different film transmissivities are set on the same photomask, the membranous and thickness of the semi-transparent film of each semi light transmitting part of control formation gets final product respectively.And, as explanation in the above-mentioned embodiment 2, preferably at the actual effect transmissivity T that has determined the 1st semi light transmitting part 204a respectively
AActual effect transmissivity T with the 2nd semi light transmitting part 204b
AAfter, according to the 1st semi light transmitting part 204a and the 2nd semi light transmitting part 204b pattern form separately and the conditions of exposure of exposure machine, determine the film transmissivity of the 1st semi light transmitting part and/or the 2nd semi light transmitting part, form the 1st semi light transmitting part and/or the 2nd semi light transmitting part according to this film transmissivity.
Like this, when manufacturing has the multi-gray scale photomas of the 1st semi light transmitting part that the actual effect transmissivity differs from one another and the 2nd semi light transmitting part, subtract the film value according to what reduce by the initial film thickness with respect to resist film of developing, design multi-gray scale photomas, can have the roughly the same resist pattern of formation thickness on the differential transfer printing body thus.
In addition, in the above description, show the situation of making multi-gray scale photomas, but be not limited thereto, also can form multi-gray scale photomas with semi light transmitting part more than three kinds that the actual effect transmissivity differs from one another with two kinds of semi light transmitting part that the actual effect transmissivity differs from one another.
(embodiment 4)
In the present embodiment, illustrate with reference to Fig. 4 and use multi-gray scale photomas to make the situation of electron device and the manufacture method of this multi-gray scale photomas.Here as an example, the manufacturing process with transistorized liquid crystal indicator is described.
At first, on insulating surface 300, form conductive layer, on this conductive layer, form the 1st resist film then, use photo-mask process that this conductive layer is carried out etching, form grid 301 (with reference to Fig. 4 (A)) thus.Then, on grid 301, stack gradually formation gate insulation layer 302, amorphous silicon layer 303, doped silicon layer 304 and conductive layer 305 (with reference to Fig. 4 (B)).
Then, on conductive layer 305, form the 2nd resist film 306 (with reference to Fig. 4 (C)), use the 1st multi-gray scale photomas 307 that the 2nd resist film 306 is developed afterwards, form the 1st resist pattern 308 (with reference to Fig. 4 (D)) of the 2nd resist film 306 thus.The 1st multi-gray scale photomas 307 as above-mentioned shown in Figure 2 can adopt the structure that has the predetermined pattern transferring that comprises transmittance section, light shielding part and semi light transmitting part on transparency carrier, also can use the method shown in the above-mentioned embodiment 1,2 to make.That is, grasp the characteristic of the 2nd resist film 306 employed resists, determine the semi light transmitting part zone the 2nd resist film subtract the film value, subtract the actual effect transmissivity T that the film value is determined semi light transmitting part according to this then
A, according to this actual effect transmissivity T
AMake the 1st multi-gray scale photomas 307.In addition, under the less situation of the pattern form of semi light transmitting part, shown in above-mentioned embodiment 2, also can consider the pattern form of semi light transmitting part and the optical condition of exposure light etc., use resulting actual effect transmissivity to obtain the film transmissivity of semi light transmitting part.
Then, the 1st resist pattern 308 as mask, is carried out etching (with reference to Fig. 4 (E)) to conductive layer 305, doped silicon layer 304 and amorphous silicon layer 303.Then, the 1st resist pattern 308 is carried out ashing treatment make its whole minimizing, form the 2nd resist pattern 309 (with reference to Fig. 4 (F)) of the 2nd resist film 306.Then, the 2nd resist pattern 309 as mask, is carried out etching to conductive layer 305, doped silicon layer 304 and amorphous silicon layer 303, form thin film transistor (TFT) (with reference to Fig. 4 (G)) thus with channel formation region, source region, drain region, source electrode and drain electrode.In addition, show the situation that forms the channel-etch transistor npn npn as an example here, this transistor is formed with recess in the part of the amorphous silicon layer that plays a role as channel formation region.Then, after forming passivating film 310, on this passivating film 310, form the 3rd resist film 311 (with reference to Fig. 4 (H)).Can use silicon nitride film etc. as passivating film.And the 3rd resist film 311 utilizes rubbing method (spin-coating method) to form, so form under the situation of the 3rd resist film 311 on differential, the surface of the 3rd resist film 311 also is a general planar.
Then, use to have the 1st semi light transmitting part that the actual effect transmissivity differs from one another and the 2nd multi-gray scale photomas 312 of the 2nd semi light transmitting part at least, the 3rd resist film 311 is developed, form the 1st resist pattern 313 (with reference to Fig. 4 (I)) of the 3rd resist film 311 thus.The 2nd multi-gray scale photomas 312 can adopt the structure that has the predetermined pattern transferring that comprises transmittance section, light shielding part and the 1st semi light transmitting part and the 2nd semi light transmitting part on transparency carrier, also can use the method shown in the above-mentioned embodiment 3 to make.That is, grasp the characteristic of the 3rd resist film 311 employed resists, set respectively the 1st semi light transmitting part zone the 3rd resist film 311 subtract film value t
1And the 3rd resist film 311 in the 2nd semi light transmitting part zone subtract film value t
2, subtract the actual effect transmissivity T that the film value is determined the 1st semi light transmitting part according to these then
AAnd the actual effect transmissivity T of the 2nd semi light transmitting part
A, according to these actual effect transmissivities T
AMake the 2nd multi-gray scale photomas 312.After developing, that can adjust the 1st semi light transmitting part in advance subtracts film value t
1With the 2nd semi light transmitting part subtract film value t
2, so that the thickness of the 1st resist pattern 313 in the 1st resist pattern 313 in the 1st semi light transmitting part zone and the 2nd semi light transmitting part zone (residual film value) roughly the same (with reference to Fig. 6).In addition, under the less situation of the pattern form of the 1st semi light transmitting part and/or the 2nd semi light transmitting part, shown in above-mentioned embodiment 2, also can consider the pattern form of the 1st semi light transmitting part and/or the 2nd semi light transmitting part and the optical condition of exposure light etc., make the film transmissivity of the 1st semi light transmitting part and/or the 2nd semi light transmitting part reflect resulting actual effect transmissivity T
A
Then, the 1st resist pattern 313 as mask, is carried out etching to passivating film 310, make the part of the conductive layer that plays a role as source electrode or drain electrode expose (with reference to Fig. 4 (J)).Then, the 1st resist pattern 313 is carried out ashing treatment its integral thickness is reduced, form the 2nd resist pattern 314 (with reference to Fig. 5 (K)) of the 3rd resist film.Here, because that the thickness of the 1st resist pattern 313 in the 1st resist pattern 313 in the 1st semi light transmitting part zone and the 2nd semi light transmitting part zone forms is roughly the same, therefore can remove the 1st resist pattern that is formed in the both sides zone fully by ashing.Then, form transparency conducting layer 315 (with reference to Fig. 5 (L)) in the mode that is electrically connected with the conductive layer that plays a role as source electrode or drain electrode.At this moment, transparency conducting layer 315 also is formed on the 2nd resist pattern 314 of the 3rd resist film.As transparency conducting layer 315, can use conductive layer (for example ITO, IZO etc.) with light transmission.Then, remove the 2nd resist pattern 314 of (peeling off) the 3rd resist film, form pixel electrode 316 (with reference to Fig. 5 (M)) thus.Then, with relative substrate between liquid crystal material is set, form liquid crystal indicator thus.
Shown in present embodiment, can simplify the manufacturing process of electron device by using multi-gray scale photomas, and cut down component costs.In addition, by using according to the actual effect transmissivity T that obtains in advance
AThe multi-gray scale photomas of making can accurately carry out the shape control of resist pattern in photo-mask process, improve repeatability and stability.As a result, can improve the stability of electron device, and reduce manufacturing cost.
In addition, the invention is not restricted to above-mentioned embodiment 1～embodiment 4, can suitably change and implement.And, can implement by appropriate combination embodiment 1～embodiment 4.For example, the material in the above-mentioned embodiment, patterning, number of components, size, treatment step etc. are an example just, can carry out various changes in the scope of performance effect of the present invention and implement.In addition, can in the scope that does not break away from the object of the invention, suitably change and implement.
[embodiment]
In the present embodiment, show to make and have the 1st semi light transmitting part that the actual effect transmissivity differs from one another and the multi-gray scale photomas of the 2nd semi light transmitting part, and use this multi-gray scale photomas to carry out the situation of photo-mask process.In addition, in the present embodiment, following situation is implemented: form resist film having on the differential transfer printing body, by the 1st semi light transmitting part the resist film that forms in the differential part of having of transfer printing body is exposed, by the 2nd semi light transmitting part to not having resist film that differential part forms expose (with reference to Fig. 3).And, in the present embodiment, change the pattern form of differential thickness (highly), the 1st semi light transmitting part and the 2nd semi light transmitting part of transfer printing body, make following four kinds of multi-gray scale photomas (multi-gray scale photomas (a)～multi-gray scale photomas (d)), use each multi-gray scale photomas to carry out photo-mask process.
At first, the multi-gray scale photomas (a)～(d) that design is shown.
Multi-gray scale photomas (a)
Transfer printing body in the 1st semi light transmitting part zone differential: 0.4 μ m
The pattern form of the 1st semi light transmitting part: more than the 50 μ m
The pattern form of the 2nd semi light transmitting part: more than the 50 μ m
Multi-gray scale photomas (b)
Transfer printing body in the 1st semi light transmitting part zone differential: 0.4 μ m
The pattern form of the 1st semi light transmitting part: the width 4.0 μ m that surrounded by light shielding part
The pattern form of the 2nd semi light transmitting part: more than the 50 μ m
Multi-gray scale photomas (c)
Transfer printing body in the 1st semi light transmitting part zone differential: 0.2 μ m
The pattern form of the 1st semi light transmitting part: more than the 50 μ m
The pattern form of the 2nd semi light transmitting part: the width 4.0 μ m that surrounded by light shielding part
Multi-gray scale photomas (d)
Transfer printing body in the 1st semi light transmitting part zone differential: 0.2 μ m
The pattern form of the 1st semi light transmitting part: the width 4.0 μ m that surrounded by light shielding part
The pattern form of the 2nd semi light transmitting part: the width 8.0 μ m that surrounded by light shielding part
Below, the film transmissivity of the 1st semi light transmitting part of obtaining above-mentioned multi-gray scale photomas (a)～(d) and the film transmissivity of the 2nd semi light transmitting part are described, and the method for making these multi-gray scale photomas (a)～(d).
At first, making each multi-gray scale photomas (a)～(d) stage before, according to the condition of the actual photo-mask process that carries out of following described setting.
Exposure machine optical condition: NA=0.08, σ=0.8, (ratio of the intensity of each wavelength is g line/h line/i line=1.0/1.0/1.0) to exposure wavelength
Exposure in the photo-mask process: 120mJ/cm
2
Resist film: positive corrosion-resisting agent
The initial film thickness of resist film: 2.4 μ m
In addition, the condition of above-mentioned photo-mask process is identical in each multi-gray scale photomas (a)～(d).
Then, grasp the characteristic of the resist that in photo-mask process, uses.In the present embodiment, under above-mentioned exposure machine optical condition, to initial film thickness is the positive corrosion-resisting agent irradiation exposure light of 2.4 μ m, obtains the exposure of this exposure light and subtracts relation between the film amount by the resist that development causes, and makes resist family curve (with reference to Fig. 7) thus.In Fig. 7, transverse axis is represented the exposure of the exposure light under the above-mentioned exposure machine optical condition, and the longitudinal axis represents that resist subtracts the film amount with respect to the exposure of exposure light.
Then, so that the identical mode of residual film value of the resist pattern in the resist pattern in the 1st semi light transmitting part zone after developing and the 2nd semi light transmitting part zone determines that the target of the resist in the 1st semi light transmitting part zone subtracts film amount t
1Subtract film amount t with the target of the resist in the 2nd semi light transmitting part zone
2In the present embodiment, in the residual film value of the resist pattern mode that is 0.8 μ m, the target that the target of resist of determining the 1st semi light transmitting part zone of multi-gray scale photomas (a)～(d) respectively subtracts the resist in film amount and the 2nd semi light transmitting part zone subtracts the film amount, subtracts the corresponding actual effect transmissivity T of film amount according to following described obtaining respectively with target then
AIn addition, can utilize following formula (1) to determine each actual effect transmissivity T obtaining according to the resist family curve with after each target subtracts the corresponding exposure of film amount
A
Multi-gray scale photomas (a)
The 1st semi-transparent film subtract film amount t
1: 1.2 μ m (actual effect transmissivity T
A=42.2mJ/120mJ=35.2%)
The 2nd semi-transparent film subtract film amount t
2: 1.6 μ m (actual effect transmissivity T
A=52.1mJ/120mJ=43.4%)
Multi-gray scale photomas (b)
The 1st semi-transparent film subtract film amount t
1: 1.2 μ m (actual effect transmissivity T
A=42.2mJ/120mJ=35.2%)
The 2nd semi-transparent film subtract film amount t
2: 1.6 μ m (actual effect transmissivity T
A=52.1mJ/120mJ=43.4%)
Multi-gray scale photomas (c)
The 1st semi-transparent film subtract film amount t
1: 1.4 μ m (actual effect transmissivity T
A=47.2mJ/120mJ=39.3%)
The 2nd semi-transparent film subtract film amount t
2: 1.6 μ m (actual effect transmissivity T
A=52.1mJ/120mJ=43.4%)
Multi-gray scale photomas (d)
The 1st semi-transparent film subtract film amount t
1: 1.4 μ m (actual effect transmissivity T
A=47.2mJ/120mJ=39.3%)
The 2nd semi-transparent film subtract film amount t
2: 1.6 μ m (actual effect transmissivity T
A=52.1mJ/120mJ=43.4%)
Then, according to the film transmissivity of following described the 1st semi-transparent film of obtaining multi-gray scale photomas (a)～(d) respectively and the film transmissivity of the 2nd semi-transparent film, made photomask.
In multi-gray scale photomas (a), because the pattern form of the pattern form of the 1st semi light transmitting part and the 2nd semi light transmitting part is enough big, so the actual effect transmissivity can be made as identical value with the film transmissivity.In the present embodiment, the film transmissivity of the 1st semi light transmitting part is made as 35% (actual effect transmissivity T
A35.2%), the film transmissivity of the 2nd semi light transmitting part is made as 43% (actual effect transmissivity T
A43.4%), made multi-gray scale photomas (a).
In multi-gray scale photomas (b), because the pattern form of the 1st semi light transmitting part is less, so according to actual effect transmissivity T
AObtain the film transmissivity by emulation.The aerial image simulation result of Fig. 8 (A) expression the 1st semi light transmitting part at this moment.In Fig. 8 (A), transverse axis is represented the configuration of semi-transparent film, and the longitudinal axis represents that the width of pattern form is that 4.0 μ m and film transmissivity are 40% actual effect transmissivity.On the other hand, because the pattern form of the 2nd semi light transmitting part is enough big, so can be with actual effect transmissivity T
ABe made as identical value with the film transmissivity.As a result, in the present embodiment, the film transmissivity of the 1st semi light transmitting part is made as 40% (actual effect transmissivity T
A35.2%), the film transmissivity of the 2nd semi light transmitting part is made as 43% (actual effect transmissivity T
A43.4%), made multi-gray scale photomas (b).
In multi-gray scale photomas (c), because the pattern form of the 1st semi light transmitting part is enough big, so the actual effect transmissivity can be made as identical value with the film transmissivity.On the other hand, because the pattern form of the 2nd semi light transmitting part is less, so obtain the film transmissivity by emulation according to the actual effect transmissivity.The aerial image simulation result of Fig. 8 (B) expression the 2nd semi light transmitting part at this moment.In Fig. 8 (B), transverse axis is represented the configuration of semi-transparent film, and the longitudinal axis represents that the width of pattern form is that 4.0 μ m and film transmissivity are 49% actual effect transmissivity.As a result, in the present embodiment, the film transmissivity of the 1st semi light transmitting part is made as 39% (actual effect transmissivity T
A39.3%), the film transmissivity of the 2nd semi light transmitting part is made as 49% (actual effect transmissivity T
A43.4%), made multi-gray scale photomas (c).
In multi-gray scale photomas (d), because the pattern form of the pattern form of the 1st semi light transmitting part and the 2nd semi light transmitting part is less, so according to actual effect transmissivity T
AObtain the film transmissivity by emulation.Fig. 8 (C) represents the 1st semi light transmitting part of this moment and the aerial image simulation result of the 2nd semi light transmitting part.In Fig. 8 (C), transverse axis is represented the configuration of semi-transparent film, and the longitudinal axis represents that the width of pattern form is that 4.0 μ m and film transmissivity are 43% actual effect transmissivity T
A, and the width of pattern form is that 8.0 μ m and film transmissivity are 44% actual effect transmissivity.As a result, in the present embodiment, the film transmissivity of the 1st semi light transmitting part of multi-gray scale photomas (d) is made as 43% (actual effect transmissivity T
A39.3%), the film transmissivity of the 2nd semi light transmitting part is made as 44% (actual effect transmissivity T
A43.4%), made multi-gray scale photomas (d).In addition, in multi-gray scale photomas (d), the difference of the film transmissivity of the 1st semi light transmitting part and the film transmissivity of the 2nd semi light transmitting part is 1%, so also can utilize identical film transmissivity to make photomask.
Table 1 illustrates the result that the multi-gray scale photomas (a)～(d) that uses made carries out photo-mask process.
According to the result of table 1, can be made as identical value (about 0.8 μ m) to the residual film value of the resist pattern in the residual film value of the resist pattern in the 1st semi light transmitting part zone of multi-gray scale photomas (a)～(d) and the 2nd semi light transmitting part zone.
Claims (10)
1. the manufacture method of a multi-gray scale photomas, this multi-gray scale photomas has the predetermined pattern transferring of the semi light transmitting part of a part of transmission that comprises transmittance section, light shielding part and make exposure light, at the resist film that is formed on the transfer printing body of wanting etched processing, the described predetermined pattern transferring of transfer printing, make described resist film constitute the resist pattern, this resist pattern becomes the mask in the described etching and processing, and wherein, described manufacture method comprises the steps:
Grasp the resist characteristic of the employed resist of described resist film with respect to described exposure light;
Determine the actual effect transmissivity of described semi light transmitting part according to described resist characteristic with respect to described exposure light; And
At least the photomask that is formed on the transparency carrier is carried out composition according to described actual effect transmissivity, form described semi light transmitting part thus.
2. the manufacture method of multi-gray scale photomas according to claim 1, wherein,
Described resist characteristic utilizes the resist family curve to stipulate, described resist family curve is represented the exposure of described exposure light and described resist the relation between the film amount of subtracting with respect to described exposure.
3. the manufacture method of multi-gray scale photomas according to claim 2, wherein,
This manufacture method is determined the film transmissivity of described semi light transmitting part according to described definite actual effect transmissivity, the pattern form of described semi light transmitting part and the conditions of exposure of exposure machine, forms described semi light transmitting part according to the film transmissivity of described semi light transmitting part.
4. the manufacture method of multi-gray scale photomas according to claim 1, wherein,
Described semi light transmitting part forms the photomask pattern and forms on transparency carrier, this photomask pattern has the size below the resolving limit of employed exposure machine when described multi-gray scale photomas is exposed.
5. the manufacture method of multi-gray scale photomas according to claim 1, wherein,
Described semi light transmitting part forms semi-transparent film and forms on transparency carrier.
6. the manufacture method of multi-gray scale photomas according to claim 1, wherein,
According to the transmitted light that utilizes described semi light transmitting part be formed on the described transfer printing body the resist pattern with respect to the initial film thickness of described resist film subtract film amount (t), determine the actual effect transmissivity of described semi light transmitting part.
7. the manufacture method of multi-gray scale photomas according to claim 1, wherein,
The semi light transmitting part of described multi-gray scale photomas has the 1st semi light transmitting part and the 2nd semi light transmitting part that the actual effect transmissivity differs from one another,
Described manufacture method comprises the steps: to determine the actual effect transmissivity of described the 1st semi light transmitting part and the actual effect transmissivity of described the 2nd semi light transmitting part respectively according to described resist characteristic.
8. the manufacture method of multi-gray scale photomas according to claim 7, wherein,
Be formed on resist pattern on the described transfer printing body according to the transmitted light that utilizes described the 1st semi light transmitting part and subtract film amount (t with respect to the initial film thickness of described resist film
1), determine the actual effect transmissivity of described the 1st semi light transmitting part,
Be formed on resist pattern on the described transfer printing body according to the transmitted light that utilizes described the 2nd semi light transmitting part and subtract film amount (t with respect to the initial film thickness of described resist film
2), determine the actual effect transmissivity of described the 2nd semi light transmitting part.
9. pattern transfer-printing method, wherein,
This pattern transfer-printing method uses the multi-gray scale photomas of making according to each described manufacture method in the claim 1～8, and the resist film on the transfer printing body is exposed, and forms the resist pattern thus on described transfer printing body.
10. pattern transfer-printing method, wherein, this pattern transfer-printing method comprises the steps:
Form resist film having on the differential transfer printing body, and
By using multi-gray scale photomas that the described resist film on the described transfer printing body is exposed, on described transfer printing body, form the resist pattern thus,
This pattern transfer-printing method uses the multi-gray scale photomas of making according to claim 7 or 8 described manufacture methods, as described multi-gray scale photomas,
Make the residual film value of each that be formed on described resist pattern resist on differential form roughly the same.
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| CN111650820A (en) * | 2020-06-28 | 2020-09-11 | 上海华虹宏力半导体制造有限公司 | Method for determining applicable condition of photoresist and used mask plate |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2011048357A (en) | 2011-03-10 |
| KR101140103B1 (en) | 2012-04-30 |
| TW201113632A (en) | 2011-04-16 |
| CN101989042B (en) | 2013-08-07 |
| KR20110013287A (en) | 2011-02-09 |
| JP5545994B2 (en) | 2014-07-09 |
| TWI428688B (en) | 2014-03-01 |
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