CN101988911A - Surface processing method of Auger electron spectrometer detecting sample - Google Patents
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- CN101988911A CN101988911A CN2009100558981A CN200910055898A CN101988911A CN 101988911 A CN101988911 A CN 101988911A CN 2009100558981 A CN2009100558981 A CN 2009100558981A CN 200910055898 A CN200910055898 A CN 200910055898A CN 101988911 A CN101988911 A CN 101988911A
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- 238000003672 processing method Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 60
- 238000012360 testing method Methods 0.000 claims description 67
- 238000004381 surface treatment Methods 0.000 claims description 37
- 229910052756 noble gas Inorganic materials 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 22
- 238000004458 analytical method Methods 0.000 abstract description 18
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000008569 process Effects 0.000 description 14
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 13
- 239000004020 conductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 231100000719 pollutant Toxicity 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
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Abstract
The invention discloses a surface processing method of an Auger electron spectrometer detecting sample, which comprises the following steps of providing the Auger electron spectrometer detecting sample; and utilizing rare gas ions to sputter the surface of the Auger electron spectrometer detecting sample. The method is simple and practical, has low cost, can rapidly and effectively reduce the charge effect and has no damage to the surface of the detecting sample requiring to be proximately analyzed so as to ensure obtaining the accurate proximate analysis result of the surface of the detecting sample and enhance the yield of the product.
Description
Technical field
The present invention relates to integrated circuit and make the field, relate in particular to a kind of surface treatment method of Auger electron spectrometer test sample.
Background technology
Make the field at integrated circuit, pad (bonding pad) is as forming the assembly of accepting that is connected with the formation electronic circuit module between semiconductor device and second half conductor device or electronic component, in the inner structure of semiconductor devices, has important effect, therefore, require pad must have good electrical conductivity and high reliability.Usually the pad of semiconductor devices forms technology and comprises the steps: that at first form conductive layer on the semiconductor-based end, the material of wherein said conductive layer can be a kind of or its combination in the aluminum or aluminum alloy; Then, the described conductive layer of etching is to form land pattern; Then, form passivation layer on the conductive layer that is formed with land pattern, described passivation layer has the opening that exposes the described land pattern of part.Yet in the manufacture process of semiconductor devices, bond pad surface is influenced by residue (residues) and pollutant (contamination) through regular meeting, causes the reliability of semiconductor devices to reduce, and then causes the yield of product to descend.Therefore, must effectively monitor the component of bond pad surface.
In many surface analysis instruments, (Auger electron spectroscopy AES) owing to have the feature that the surface is sensitive, spatial resolution is better and quick element is discerned, is often used in the bond pad surface component analysis to Auger electron spectrometer.
Yet, utilizing Auger electron spectrometer to analyze in the process of bond pad surface component, through regular meeting electric charging effect (charging effect) appears, and described electric charging effect often causes Auger electron peak drift, the more serious distortion that can cause required power spectrum.Electric charging effect occurring mainly is because Auger electron spectrometer is to come recognition element by its specific Auger electron peak position, wherein electron beam is the excitaton source of Auger electron, in the sample analysis process, when electron beam scanning bond pad surface of pressurizeing at a high speed and the passivation layer around it, because the passivation layer in the Auger electron spectrometer test sample is not a conductive material, so a large amount of electronics is accumulated in this passivation layer surface, this can influence the collection of secondary electron, also can stop Auger electron to overflow from bond pad surface, influence the signal to noise ratio (S/N ratio) of Auger electron spectrometer, and cause occurring above-mentioned electric charging effect.
At present, industry has adopted the surface treatment method of multiple Auger electron spectrometer test sample to attempt to reduce the electric charging effect that is run in the Auger electron spectrometer analytic process.For example, with conductive materials such as aluminium foil parcel Auger electron spectrometer test sample, yet, in encapsulation process, be difficult to the location because the test sample that will analyze is very little, be difficult to guarantee that the welding disking area that will analyze is exposed, therefore the success ratio of this method is very low.
Industry also adopts another method to reduce electric charging effect, promptly at conducting resinls such as test sample surface-coated elargol or carbon pastes, but this method also has shortcoming, be that these conducting resinls are very easy to pollute bond pad surface in coating procedure, and cover the truth of the bond pad surface that will analyze.
In addition, industry is also attempted at conductive materials such as platinum plating of test sample surface electrical or silver to reduce electric charging effect, yet in the process of electroplatinizing or silver, also cause the pollution on test sample surface most probably, and the in esse element signal of bond pad surface that causes analyzing is by a large amount of platinum signals or silver-colored signal de-emphasis or interference, and then can't obtain the result of bond pad surface component analysis accurately.
Therefore, providing a kind of electric charging effect that reduces, to the surface treatment method of the high Auger electron spectrometer test sample of bond pad surface not damaged and success ratio, is very necessary.
Summary of the invention
The invention provides a kind of surface treatment method of Auger electron spectrometer test sample, this method is simple and practical, and cost is low, can reduce electric charging effect fast and effectively, and the test sample surface of needs being carried out component analysis can not produce damage, has improved the product yield.
For solving the problems of the technologies described above, the invention provides a kind of surface treatment method of Auger electron spectrometer test sample, comprising: an Auger electron spectrometer test sample is provided; Utilize the described Auger electron spectrometer test sample of noble gas ion sputter surface.
Optionally, described Auger electron spectrometer test sample comprises: the semiconductor-based end; Be positioned at the suprabasil pad of described semiconductor; Be positioned at the passivation layer on the described pad, wherein this passivation layer has the opening that exposes the described pad of part.
Optionally, described Auger electron spectrometer comprises an ion gun, utilizes described ion gun that described noble gas ion is provided, and described ion gun is a difference bleeder ion gun, and the vacuum tightness in the described ion gun is 3 * 10
-6～3.6 * 10
-6Pascal.
Optionally, described noble gas ion is an argon gas ion.
Optionally, utilizing the time on the described Auger electron spectrometer test sample of noble gas ion sputter surface is 10～50 seconds.
Optionally, utilizing the time on the described Auger electron spectrometer test sample of noble gas ion sputter surface is 30 seconds.
Optionally, the energy of described noble gas ion is 70～110 electron-volts.
Optionally, the energy of described noble gas ion is 90 electron-volts.
Optionally, the material of described pad is an aluminum or aluminum alloy, and described passivation layer comprises silicon dioxide layer and is positioned at silicon nitride layer on this silicon dioxide layer.
Compared with prior art, the surface treatment method of Auger electron spectrometer test sample provided by the invention has the following advantages:
1, described surface treatment method utilizes the described Auger electron spectrometer test sample of noble gas ion sputter surface, simple and practical, can be fast and electric charge that effectively neutralization is accumulated in the test sample surface, prevent the collection of these charge affects secondary electrons, guarantee that Auger electron can overflow from the test sample surface, improve the signal to noise ratio (S/N ratio) of Auger electron spectrometer, reduce electric charging effect, help to obtain test sample surface component analysis result accurately.
2, described surface treatment method uses noble gas ion sputter test sample surface, can guarantee that described ion can not react with test sample.
3, in described surface treatment method, the energy of employed noble gas ion is very low, when guaranteeing to neutralize test sample surface charges accumulated, can guarantee that again the test sample surface can not sustain damage, and can not produce undesired signal.
4, the described disposal route ion gun that utilizes Auger electron spectrometer to carry provides noble gas ion, need not additionally to add ion source device, has avoided extra cost, the very low and easy realization of cost.
Description of drawings
Fig. 1 is the process flow diagram of surface treatment method of the Auger electron spectrometer test sample of the embodiment of the invention;
Fig. 2 is the Auger electron spectroscopy figure that obtains after existing surface treatment method is finished;
Fig. 3 is the Auger electron spectroscopy figure that obtains after the surface treatment method of the employing embodiment of the invention is finished.
Embodiment
Below with reference to accompanying drawings the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, the unnecessary details because they can be the present invention and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
In background technology, mention; the bond pad surface quality is a frequent monitored project in the semi-conductor industry; that is to say; need frequent component effectively to detect to bond pad surface; to judge whether bond pad surface has pollutant or residue; these pollutants and residue cause a series of problem through regular meeting, as relatively poor binding ability with relatively poor electrically contact etc., have reduced the reliability of semiconductor devices.
Auger spectroscopy is to measure the chemistry of material and the crucial technology of component characteristic.Specifically, Auger spectroscopy is the energy spectrum of the feature electronics (being also referred to as Auger electron) launched in the solid of measuring by the high energy ion beam radiation, this ion beam makes the ionization that produces atomic core levels in solid interior, and then the room of formed atomic core levels is filled by another electronics from the higher energy level of radiationless processing immediately.Give peer or, make described another electronics from atom, escape to elect by the NE BY ENERGY TRANSFER that electronic transition discharged near its another electronics from more senior to atomic core levels.The kinetic energy of Auger electron is determined by the work function of this atom and the structure of its energy level.Because the feature that Auger is handled, all elements except hydrogen and helium is a feature with unique auger spectra all, has the energy peak of determining very much.By analyzing the distribution and the amplitude of the line in the auger spectra in given material, can determine the element of this material and their relative concentration.
Be widely applied in the analytic process of bond pad surface component based on the Auger electron spectrometer that above-mentioned principle developed; yet; in the process of utilizing Auger electron spectrometer analysis bond pad surface component; electric charging effect appears through regular meeting; this mainly is because Auger electron spectrometer is to come recognition element by its specific Auger electron peak position; wherein electron beam is the excitaton source of Auger electron; in the test sample analytic process; when electron beam scanning bond pad surface of pressurizeing at a high speed and the passivation layer around it; because passivation layer is not a conductive material in the Auger electron spectrometer test sample; so a large amount of electronics is accumulated in this test sample surface; this can influence the collection of secondary electron; also can stop Auger electron to overflow from the test sample surface; influence the signal to noise ratio (S/N ratio) of Auger electron spectrometer; cause occurring electric charging effect; described electric charging effect often causes the Auger electron peak drift; more serious then can cause the distortion of required power spectrum, and then causes obtaining test sample surface component analysis result accurately.
Core concept of the present invention is, a kind of surface treatment method of Auger electron spectrometer test sample is provided, and this method is simple and practical, cost is low, can reduce electric charging effect fast and effectively, and can not produce damage, improve the product yield the test sample surface that needs carry out component analysis.
Please refer to Fig. 1, it is the process flow diagram of the Auger electron spectrometer test sample of the embodiment of the invention, and in conjunction with this figure, this method comprises the steps:
Step S1 provides an Auger electron spectrometer test sample.
Wherein, described Auger electron spectrometer test sample comprises the semiconductor-based end, be positioned at the suprabasil pad of described semiconductor and be positioned at passivation layer on the described pad, described passivation layer has the opening that exposes the described pad of part, is formed with semiconductor device structure at wherein said the semiconductor-based end.The material of wherein said pad can be a kind of or its combination in the aluminum or aluminum alloy, and described passivation layer comprises silicon dioxide layer and is positioned at silicon nitride layer on this silicon dioxide layer.
Because the present invention relates generally to the surface treatment process of Auger electron spectrometer test sample, so will not introduce in detail process that in the semiconductor-based end, forms semiconductor device structure and the process that on the semiconductor-based end, forms pad and passivation layer, but those skilled in the art should know this.
Step S2 utilizes the described Auger electron spectrometer test sample of noble gas ion sputter surface.
Described surface treatment method utilizes the described Auger electron spectrometer test sample of noble gas ion sputter surface, simple and practical, can be fast and negative charge that effectively neutralization is accumulated in the test sample surface, prevent that these negative charges from influencing the collection of secondary electron, guarantee that Auger electron can overflow from bond pad surface, improve the signal to noise ratio (S/N ratio) of Auger electron spectrometer, reduce electric charging effect, help to obtain the result of bond pad surface component analysis accurately.
And,, therefore can guarantee that described noble gas ion can not react with test sample because rare gas has chemical inertness.Wherein, described noble gas ion can be argon gas ion.
Specifically, mainly comprise electron gun, electronic detectors and controller in order to the Auger electron spectrometer of analyzing described pad component, described electron gun is as the excitaton source of Auger electron spectroscopy, described electronic detectors are in order to receive the Auger electron that the test sample surface is launched, and the signal of the energy distribution of output expression institute ejected electron, described controller is in order to receive this signal and to analyze this energy distributions to determine the component of various elements in test sample.In addition, described Auger electron spectrometer also comprises ion gun (Ion Gun), and it normally is used to carry out the auger analysis of fast deep analysis, also can be used for the test sample cleaning surfaces.
In embodiments of the present invention, the ion gun that can utilize Auger electron spectrometer to carry provides noble gas ion, need not extra the add ion source device that is used to produce noble gas ion, the low and easy realization of cost.
Wherein, described ion gun can be a difference bleeder ion gun, promptly utilize differential pressure to bleed to make vacuum tightness in the ion gun higher about 100 times than the vacuum tightness that Auger electron spectrometer carries out in the analysis room that test sample analyzes, when described ion gun was worked, the analysis room of Auger electron spectroscopy still can be in condition of high vacuum degree like this.
Detailed, the vacuum tightness in the described ion gun is 3 * 10
-6～3.6 * 10
-6Pascal, the energy of described noble gas ion is 70～110 electron-volts, and is preferable, and the energy of described noble gas ion is 90 electron-volts, can guarantee to neutralize test sample surface charges accumulated, can guarantee that again the test sample surface can not sustain damage.Utilizing the time on the described Auger electron spectrometer test sample of noble gas ion sputter surface is 10～50 seconds, preferable, the time on the described Auger electron spectrometer test sample of noble gas ion sputter surface is 30 seconds, than existing surface treatment method, described sputtering time is very short, has improved work efficiency.
In the surface treatment method that the embodiment of the invention provided, do not apply or electroplate other conductive material at sample surfaces, promptly saved the processing time of test sample, can not produce undesired signal again.
Specifically please refer to Fig. 2 to Fig. 3, its for behind the existing surface treatment method with the surface treatment method that adopts the embodiment of the invention after the comparison diagram of the Auger electron spectroscopy that obtains, wherein, Fig. 2 is the Auger electron spectroscopy figure that obtains after existing surface treatment method is finished, and Fig. 3 is the Auger electron spectroscopy figure that obtains after the surface treatment method of the embodiment of the invention is finished.
Comparison diagram 2 and Fig. 3 can obviously find out, the Auger electron spectroscopy figure that obtains after adopting existing surface treatment method to finish, because it is very serious to be subjected to the influence of electric charging effect to make that Auger electron peak drifts about, even be that the Auger electron peak of carbon (C) element about 266 electron-volts is covered fully with kinetic energy, and among the Auger electron spectroscopy figure that after the surface treatment method of the embodiment of the invention is finished, obtains, each Auger electron peak is all less than displacement, and is perfectly clear and distinguishes easily.
Can learn, use noble gas ion sputter Auger electron spectrometer test sample surface to neutralize and be accumulated in the negative charge on test sample surface, and the test sample surface of needs being carried out component analysis can not produce damage, therefore when utilizing Auger electron spectrometer to obtain Auger electron spectroscopy figure, can not be subjected to the influence of electric charging effect, obtain test sample surface component analysis result accurately, improved the yield of product.
In sum, the invention provides a kind of surface treatment method of Auger electron spectrometer test sample, this method comprises the steps: to provide the Auger electron spectrometer test sample; Utilize the described Auger electron spectrometer test sample of noble gas ion sputter surface, this method is simple and practical, cost is low, can reduce electric charging effect fast and effectively, and the test sample surface of needs being carried out component analysis can not produce damage, help to obtain test sample surface component analysis result accurately, improved the product yield.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (12)
1. the surface treatment method of an Auger electron spectrometer test sample comprises:
One Auger electron spectrometer test sample is provided;
Utilize the described Auger electron spectrometer test sample of noble gas ion sputter surface.
2. surface treatment method as claimed in claim 1 is characterized in that, wherein said Auger electron spectrometer test sample comprises:
The semiconductor-based end;
Be positioned at the suprabasil pad of described semiconductor;
Be positioned at the passivation layer on the described pad, wherein this passivation layer has the opening that exposes the described pad of part.
3. surface treatment method as claimed in claim 2 is characterized in that wherein said Auger electron spectrometer comprises an ion gun, utilizes described ion gun that described noble gas ion is provided.
4. surface treatment method as claimed in claim 3 is characterized in that, wherein said ion gun is a difference bleeder ion gun.
5. surface treatment method as claimed in claim 4 is characterized in that, the vacuum tightness in the wherein said ion gun is 3 * 10
-6～3.6 * 10
-6Pascal.
6. surface treatment method as claimed in claim 5 is characterized in that wherein said noble gas ion is an argon gas ion.
7. surface treatment method as claimed in claim 6 is characterized in that, wherein utilizing the time on the described Auger electron spectrometer test sample of noble gas ion sputter surface is 10～50 seconds.
8. surface treatment method as claimed in claim 7 is characterized in that, wherein utilizing the time on the described Auger electron spectrometer test sample of noble gas ion sputter surface is 30 seconds.
9. surface treatment method as claimed in claim 8 is characterized in that, the energy of wherein said noble gas ion is 70～110 electron-volts.
10. surface treatment method as claimed in claim 9 is characterized in that, the energy of wherein said noble gas ion is 90 electron-volts.
11. surface treatment method as claimed in claim 10 is characterized in that, the material of wherein said pad is an aluminum or aluminum alloy.
12. surface treatment method as claimed in claim 11 is characterized in that, wherein said passivation layer comprises silicon dioxide layer and is positioned at silicon nitride layer on this silicon dioxide layer.
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|---|---|---|---|
| CN2009100558981A CN101988911B (en) | 2009-08-04 | 2009-08-04 | Surface processing method of Auger electron spectrometer detecting sample |
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|---|---|---|---|
| CN2009100558981A CN101988911B (en) | 2009-08-04 | 2009-08-04 | Surface processing method of Auger electron spectrometer detecting sample |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104364909A (en) * | 2012-05-31 | 2015-02-18 | 道康宁公司 | Silicon wafer coated with a passivation layer |
| CN114047215A (en) * | 2021-10-20 | 2022-02-15 | 北京科技大学顺德研究生院 | A device and method for eliminating uneven charge on the surface of a sample to be tested |
| WO2023092298A1 (en) * | 2021-11-23 | 2023-06-01 | 华为技术有限公司 | Electron beam inspection equipment and inspection method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100559173C (en) * | 2005-12-27 | 2009-11-11 | 中芯国际集成电路制造(上海)有限公司 | Methods of handling samples for Auger electron spectroscopy in the manufacture of integrated circuits |
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2009
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104364909A (en) * | 2012-05-31 | 2015-02-18 | 道康宁公司 | Silicon wafer coated with a passivation layer |
| CN114047215A (en) * | 2021-10-20 | 2022-02-15 | 北京科技大学顺德研究生院 | A device and method for eliminating uneven charge on the surface of a sample to be tested |
| CN114047215B (en) * | 2021-10-20 | 2023-08-15 | 北京科技大学顺德研究生院 | Device and method for eliminating uneven charge on surface of sample to be measured |
| WO2023092298A1 (en) * | 2021-11-23 | 2023-06-01 | 华为技术有限公司 | Electron beam inspection equipment and inspection method |
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| CN101988911B (en) | 2012-11-21 |
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