CN101985739A - A Dose Control System of Plasma Immersion Implantation Equipment - Google Patents
A Dose Control System of Plasma Immersion Implantation Equipment Download PDFInfo
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- CN101985739A CN101985739A CN 201010514606 CN201010514606A CN101985739A CN 101985739 A CN101985739 A CN 101985739A CN 201010514606 CN201010514606 CN 201010514606 CN 201010514606 A CN201010514606 A CN 201010514606A CN 101985739 A CN101985739 A CN 101985739A
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Abstract
本发明属于等离子体技术领域，具体为一种等离子体浸没注入设备的剂量控制系统。该控制系统包括位于离子注入设备内部的信号采集器，外围的信号测量设备以及计算机处理系统。其中信号采集器的设计依据及计算机自动控制系统的算法包含了本发明系统提供的离子注入剂量标定方法。系统通过信号采集器收集离子注入信号，而后通过测量设备测量信号，最后通过计算机系统处理信号获得离子注入信息，并控制等离子体浸没注入设备的工作。本发明系统解决了等离子体浸没注入剂量测定工作的复杂性，从而有效进行离子注入剂量的标定和控制。本发明系统可以在各类等离子体浸没注入的设备中使用。
The invention belongs to the field of plasma technology, in particular to a dose control system of plasma immersion implantation equipment. The control system includes a signal collector inside the ion implantation equipment, peripheral signal measuring equipment and a computer processing system. The design basis of the signal collector and the algorithm of the computer automatic control system include the ion implantation dose calibration method provided by the system of the present invention. The system collects the ion implantation signal through the signal collector, then measures the signal through the measuring equipment, and finally processes the signal through the computer system to obtain the ion implantation information, and controls the work of the plasma immersion implantation equipment. The system of the invention solves the complexity of plasma immersion implant dose measurement work, thereby effectively performing ion implant dose calibration and control. The system of the present invention can be used in various plasma immersion implantation equipment.
Description
Technical field
The invention belongs to technical field of plasma, be specifically related to a kind of dosage control system of plasma immersion injection device.
Background technology
The plasma immersion implantttion technique is a kind of novel ion implantation technique that occurs the eighties in 20th century, it has changed the limitation of the ion implantation sight line of traditional pencil, many advantages that manufacturing batch is efficient, be easy to handle special-shaped workpiece are arranged, be widely used in material surface modifying and field of material preparation.The plasma immersion injection device comprises that mainly source, vacuum cavity and load power source three parts take place plasma body as shown in Figure 1.When carrying out the plasma immersion injection, the source takes place and produces plasma body in inside cavity in plasma body, and the negative high voltage accelerate plasma that loads on the target platform moves ion implantation sample surfaces to the target platform toward the target platform.
Defectives such as but the plasma immersion implantttion technique exists as input horizon is thin, dosage and energy control are inhomogeneous, wherein the control of ion implantation dosage has directly determined the application prospect of this technology in semiconductor material prepares.Plasma immersion implantation dosage is subjected to the influence of all multiparameters, as the power that injects ionic type, target platform material and plasma source, injecting voltage etc., therefore lacks the method for accurately demarcating the plasma body implantation dosage.The theoretical model that some dosage that exist are at present demarcated, as based on Child formula and ion sheath model, the plasma implantation dosage formula of under the pulse square wave voltage loads, deriving:
D wherein
TotalBe implantation dosage, ε
0Be permittivity of vacuum, e and m are for injecting ionic electric weight and quality, n
0Be plasma density, and t, V, f, t
pBe respectively injection length, injecting voltage, electric voltage frequency and pulse width.
Aforesaid method ionic medium volume density n
0Measurement have certain difficulty, spectrography commonly used and two probe method all exist bigger error; And theoretical model hypothesis plasma density n
0Keep constant, and experiment measuring n
0On the vertical z axle of cavity, bigger difference is arranged; Model has also omitted the recovery of injection process ionic medium body in the pulse and has replenished, the above-mentioned accurate demarcation generation difficulty that is similar to and supposes all to make dosage.Plasma density n in addition
0Also be subjected to the influence of a plurality of parameters such as gas type and plasma source power, when injection parameter changes, need redeterminate n
0, make that this method is numerous and diverse and lack operability.
In recent years, the plasma immersion implantttion technique is applied to all kinds of novel fields more and more, learns as metallurgy and biopolymer.The non-sight line characteristics of plasma immersion implantttion technique particularly make it aspect channel doping of semiconductor material and the material preparation huge advantage arranged.Therefore, the accurate control of plasma immersion implantation dosage is particularly important.
Summary of the invention
The present invention aims to provide the automatic control system that a kind of energy article on plasma body immersion implantation dosage is accurately controlled.
Plasma immersion implantation dosage Controlling System provided by the invention as shown in Figure 2, comprises the signal picker of plasma immersion injection device inside, outside Signal Measurement System and computer processing system; Wherein, described signal picker is collected the interior target platform of the cavity plasma body injection signal everywhere of plasma body injection device, the ion implantation situation of real time modelling different positions sample separately; The Signal Measurement System of described outside is accepted and is measured the signal of being collected by signal picker, and this signal is passed to computer processing system; Described computer processing system, the signal that acceptance and processing signals measuring system measure, and article on plasma body submergence injection device is controlled in view of the above; The computer processing system processing signals is the actual injection situation of workpiece per sample, and the gas ions immersion implantation dosage scaling method according to the present invention proposes calculates the ionic implantation dosage, and the work of feedback control plasma immersion injection device.When ion implantation dosage satisfy impose a condition after, computer processing system is controlled the plasma immersion injection device automatically and is quit work.Can reach the accurately control automatically of plasma immersion implantation dosage by this cover system.
The invention provides a kind of gas ions immersion implantation dosage scaling method, promptly use mensuration electric current total amount to demarcate ion implantation dosage, by through testing the relation of definite implantation dosage and loop current waveform, can obtain more accurate and reliable ion implantation dosage value.Concrete grammar is as follows:
At first pass through the electric current and voltage of the ion implantation pulse of oscilloscope The real time measure.As shown in Figure 1, promptly in plasma immersion implantation device, at high-voltage pulse power source and plasma chamber and target platform two ends formation circuit loop, 6 measure pulsed voltages from the high-voltage probe junction, measure the loop current in the corresponding pulses in return lead.In the loop current (Fig. 3), mainly comprise the composition that injects ion(ic)current and sputter secondary electron electric current and shell diffusion current.And in whole loop, the shell diffusion current can be ignored because the generation diffusion of plasma body etc. are compound again.If, promptly can obtain the ion(ic)current part, thereby determine to inject ionic dosage so can determine of the contribution of secondary electron electric current in whole loop current.
Ion implantation electric weight total amount can be passed through integration current, and eliminates the secondary electron gained.By the electric weight total amount divided by corresponding ionic type with charge number promptly can obtain the ion dose that the unit surface time injects, calculation formula is as follows:
Wherein
η 0 For the secondary electron of supposing under a certain condition produces coefficient;
δBe the correction factor of secondary electron, this coefficient is relevant with target platform type with dissimilar injection ionic types, and with the height of pulsed voltage, pulsewidth and frequency dependence; T is whole injection length;
fFrequency for pulsed voltage;
t p Be the pulsed voltage width;
IBe measured current;
eFor injecting the ionic electric weight;
AFor the target table top amasss;
D Im Be the unit surface ion implantation dosage.Remove
δIn addition, other parameters in the formula (2) all can be by measuring.
δExcept with inject ionic species, outside target platform material type was relevant, also with the size of pulsed voltage, pulse-repetition was relevant with width.This dependency is expressed as by specific form
, wherein,
α, β, γBe respectively the modifying factor of secondary electron and voltage, pulsewidth and frequency dependence;
V 0 , t P0 With
f 0 Be correspondence
η 0 Voltage under the condition, pulsewidth and frequency.Then (2) formula is expressed as:
（3）
Discuss now
α, β, γConcrete influence to implantation dosage.Accompanying drawing 4,5 and 6 has provided N
2Atmosphere, plasma body air pressure are 0.5Pa, and RF-coupled power is under the situation of 80W, the current-voltage waveform figure that different voltage swings, pulsewidth and frequency are surveyed.Wherein shown in Figure 4 under different voltage condition, when voltage was higher than a certain threshold value, along with the increase ion implantation energy of voltage increases, secondary electron can rise thereupon, so δ has the relation with voltage.Shown in Figure 5 under the situation that the pulsed voltage pulsewidth changes, voltage exists outside certain delay when positive rise, substantially maintain in the constant voltage range, under the situation of voltage constant, ion implantation energy is determined, the secondary electron production rate will maintain a stable level, so inject pulsewidth the correction factor β of secondary electron will be about 1, and this is verified in experimentation He in the theoretical model equally.Shown in Figure 6 when electric voltage frequency changes, under general injection parameter is set, the recovery that plasma body will be reached plasma sheath in the gap of effectively injecting, the cavity plasma body is dynamic stabilization process.So frequency f and implantation dosage are proportional, so dosage and frequency dependence γ modified value equal 1, this and fit like a glove based on the traditional calculating formula (1) of Child formula and shell model of nucleus.
After α, β, γ revised, can determine that thus secondary electron correction factor δ is the correlative of injecting voltage, suppose
, m wherein, n are and inject relevant constant coefficient such as ionic type.So the calibrated and calculated of dosage turns to following formula with formula (3):
The using method of this formula is under a certain specific injection ionic species and target type, to set the secondary electron coefficient η under a certain injection condition
0, determining of this coefficient can be with reference to shell theoretical calculation model data.Then by the situation of different voltages injections, constant coefficient m and the n in the formula (4) determined in match.Thus, under different injection conditions, ion implantation dosage can be undertaken by measuring loop current and formula (4).Dosage based on this formula (4) is demarcated, and is better identical with traditional theoretical formula (1) result based on Child formula and plasma sheath derivation.
In a kind of technical scheme of optimization, the voltage that plasma immersion injects can not be the square wave negative pulse voltage, is other forms of load voltage, corresponding carrying out
The modification of form gets final product.
In a kind of technical scheme of optimization, plasma type and target material type can conversion, to different material plasma types and different target types, corresponding modify
The modification of form gets final product.
In a kind of technical scheme of optimization, dosage calibrated and calculated formula (4) formula is elaborate more, comprise the correction of the secondary electron production rate being carried out different models, introduce the fine correction of different variable controlled variables such as gas pressure intensity, radio frequency source coupled power etc.
Corresponding to above-mentioned gas ions immersion implantation dosage scaling method, the present invention also provides the determinator of plasma immersion implantation dosage.This device is the auxiliary equipment of plasma immersion injection device.Easy device is placed in plasma immersion with it and injects on the target platform of cavity as shown in Figure 7, and the signals collecting by proofing unit can obtain the information that ion dose injects, and reaches easy and accurately controls the effect of implantation dosage.
The determinator of this plasma body immersion implantation dosage comprises the signal picker on the target platform, inner metal lead wire and peripheral Signal Measurement System.Signal picker can be divided into two-layerly up and down as shown in Figure 7, and the upper strata is that tinsel carrier (as stainless steel) is used to receive ion implantation information; Lower floor is the substrate (as sheet mica) of insulation layer, is used for the connection between isolated target platform and the signal picker.What connect the peripheral measuring system of internal signal collector and cavity in addition except that signal picker is connected lead-in wire (as the rigidity copper cash).Entire structure is a rigid structure, and the method for welding and bending wire is adopted in switching.
When this installed as the auxiliary equipment of plasma immersion injection device instrument, its joining place had two places, and one is on the target platform, and signal picker is that insulativity contacts with the target platform, and signal picker can be free to slide on the target platform by rotating the peripheral metal lead-in wire.Another point of contact is lead-in wire leading point, cavity bottom, adopts the mould of rubber o-ring and Teflon material preparation to realize sealing herein, and lead-in wire passes in the middle of mould and O type circle.The Teflon mould has been realized the insulation between lead-in wire and the cavity like this, and O type circle has been realized the vacuum-sealing of lead-in wire outlet.
The parameter of this each accessory structure of contrive equipment is: signal pickup assembly size is the rectangular structure of 10mm * 10mm * 5mm, its at the middle and upper levels sheet thicknesses be 2mm, lower floor's insulating concrete mica plate thickness is 3mm.Copper lead-in wire size can be regulated according to the parameter of each plasma immersion injection device cavity.The material type of signal picker and lead-in wire and size can be regulated according to the demand of measuring accuracy.
The method that this contrive equipment is measured plasma immersion implantation dosage is: detect the ion implantation speed of each point on the target platform respectively, thereby obtain the ion implantation information of sample on the target platform.Promptly on the z of cavity is axial, different distributions is arranged, thereby the thickness of signal picker just can be simulated true injection situation more near processed sample thickness more at plasma density.On the cavity sustained height, plasma density becomes rotational symmetry to distribute, so the ion implantation speed of each point also becomes rotational symmetry to distribute on the target platform, becomes the key that dosage is demarcated so accurately measure and obtain target platform ion implantation speed everywhere.
The mode of turning axle lead that adopts this contrive equipment realizes signal picker moving on the target platform.As shown in Figure 8, when the rotation peripheral leads, because apparatus structure is a rigid structure, signal picker will be subjected to transmission, carries out the circumference rotation around axis on target platform surface.It can detect each dot information on the target platform in order to guarantee signals collecting, and for just passing through target platform central point O, then signal picker is the center of circle with the intersection point O ' of axis and target platform with the length setting of rigid wire for we, and OO ' moves in a circle for radius.
Setting target platform radius is R
0, OO ' distance is r
0When signal picker is positioned at target platform center, the then lucky and OO ' coincidence of top lead-in wire, the dosage that measure this moment is the implantation dosage of target platform central point.When signal picker departs from central point O, when becoming the θ angle as the top lead-in wire with OO ', the spotting then has to satisfy to concern in the position of distance target platform center x distance:
The external metering facility of this contrive equipment is the signal detection system of band high-voltage probe, and the simplest external device is as the oscilloscope of band high-voltage probe.When on outer lead, adding negative high voltage, then can detect loop voltage and loop current by oscilloscope.After signals collecting reads and stores, carry out data processing, thereby obtain the information of the ion dose rate of injection of target platform different positions.When removing the implantation dosage determinator and carry out sample processing treatment process, can be per sample in target platform present position, and the sample size size, obtain the precise information of ion implantation dosage.
In a kind of contrive equipment of optimization, the voltage type that plasma immersion injects can change, and when voltage type changes, only needs to change follow-up data processing and gets final product.Dosimetric method is constant.
In a kind of contrive equipment of optimization, all kinds of parameters of plasma immersion injection process change, and as RF-coupled power, when gas type etc. changed, order sequence modification data handling procedure can obtain the ion implantation dosage rate information.
In a kind of contrive equipment of optimization, the material type of device signal picker, thus dimensional parameters can change and satisfies different requirements.But its basic structure is the bilayer structure of metallic conductor and isolator.
In a kind of contrive equipment of optimization, the material type of device lead-in wire, dimensional parameters can be regulated according to the test needs, thereby reaches more realistic simulation ion implantation process, and obtains more accurate ion implantation dosage mensuration.
In a kind of contrive equipment of optimization, do not need to come picked up signal collector moving on the target platform by the mode of rotation peripheral leads axle, make signal picker on the target platform, can move more accurately as required but add device for transporting electricity at heavy.
The external detection device of this invention system is mainly and collects the signal on the signal picker and detect and read.Signal picker has been accepted ion implantation on the target platform equally, simultaneously self has also produced the electronics sputter, and these some all will form loop current.This moment, proofing unit just detected these current signals, had kept the current waveform and the numerical value of ion implantation generation in each pulse in mind.Its device can specifically can read the oscilloscope of current waveform, detects to obtain real-time ion implantation current information.
The computer system of this invention system is the information PIAPACS, and it has accepted the loop current information that test set provides on the one hand, on the one hand according to the work of row control plasma immersion injection device again after its data processing.The work of its information processing comprises the current signal of handling detection system, and it is handled and screens, and obtains the ion implantation dosage information of each position unit surface on the target platform.Simultaneity factor is analyzed the practical situation of sample workpiece, draws its whole real-time unit surface implantation dosage and whole implantation dosage.The operator can Real Time Observation to the ion implantation dosage situation of sample workpiece, when the dosage that reaches setting when its implantation dosage required, system's control plasma immersion injection device quit work, and injects and finishes.
System of the present invention is particularly related to the system that a cover is used for controlling automatically plasma immersion implantation dosage.This system has revised the dosage scaling method that plasma immersion injects again, by the signals collecting of signal picker in plasma chamber inside, the signal detection of external detection equipment, and the signal processing of computer system and to the automatic control of injection device.This invention system has reduced the complicacy that the traditional plasma immersion implantation dosage is demarcated, and can be applied in all kinds of plasma immersion injection devices.
Description of drawings
Fig. 1 is the plasma immersion implantation device synoptic diagram.
Fig. 2 is a plasma immersion implantation dosage Controlling System synoptic diagram.
Fig. 3 is the 0.5Pa nitrogen atmosphere, is 20kV at injecting voltage, and pulsewidth is 20 μ s, and frequency is the current-voltage waveform figure that measures under the 50Hz condition.
The current-voltage waveform figure of Fig. 4 under different injecting voltage conditions, measuring.
Fig. 5 is for injecting the current-voltage waveform figure that measures under the pulsewidth condition in difference.
The current-voltage waveform figure of Fig. 6 under different injected frequency conditions, measuring.
Fig. 7 is for measuring the device sketch of ion implantation dosage contrive equipment.
Fig. 8 is signal picker mobile synoptic diagram (inside cavity target platform vertical view) on the target platform.
Number in the figure:1 is the ion radio frequency source, and 2 for observing action pane; 3 is vacuum pump; 4 are gas injection window; 5 is the target platform; 6 are the high-voltage probe connection; 7 is the current measurement of oscilloscope pulsed voltage; 8 is the dosage control system of plasma immersion injection device; 9 is the upper strata tinsel carrier of signal picker; 10 is the lower-layer insulation sheet substrate of signal picker; 11 connect lead for drawing; 12 is the bottom of vacuum cavity; 13 Teflon moulds for insulation usefulness; 14 is vacuum-packed rubber o-ring; 15 is inside cavity target platform; 16 is signal picker; 17 for connecting lead-in wire; The movement locus of 18 signal pickers when being rotation on the target platform; 19 is the axis of controls movement; 20 are the top lead-in wire.
Embodiment
The invention is further illustrated by the following examples.
Embodiment 1
Present embodiment has illustrated concrete enforcement means.At first be that the dosage that plasma immersion injects is demarcated: at nitrogen atmosphere plasma body air pressure is under the situation of 0.5Pa, setting the radio frequency source coupled power is 80W, set different voltage (5kV～30kV), pulsewidth (10 μ s～50 μ s), frequency (50Hz～100 Hz) this moment, in the plasma immersion injection experiments, real-time monitoring current voltage waveform.At injecting voltage V
0Be set at 20kV and η
0Be set under 8.5 the situation, to obtain the m value be 1.02 in (5 kV～30 kV) match under different injecting voltages, and the n value is-1.12.Implantation dosage and traditional plasma shell model of nucleus are more identical, with the fitting parameter in this definite (4) formula.
Control the stage in real time at the dosage that plasma immersion injects, the radio frequency source coupling produces plasma body in the cavity, and the negative pulse power supply makes plasma body be injected into the sample workpiece surface.This moment, the dosage control system carried out work, collect target platform ion implantation information everywhere by signal pickup assembly, external test set can detect relevant informations such as obtaining loop current voltage by high-voltage probe, obtains the ion implantation speed of this point again according to the described dosage scaling method of this patent by computer system.Realize signal collector moving on the target platform by the rotation outer lead, thereby obtain the ion implantation dosage of target platform each point.Can also the ion implantation total dose of real-time monitored by system, when reaching, ion implantation dosage sets when requiring, and computer system control plasma immersion injected system quits work, and plasma immersion injects and finishes.
As in silicon chip, injecting oxygen, during simulation SIMOX technology.Under different experiment conditions is set, as changed plasma chamber air pressure (10
-2Pa～1Pa), coupled power (50W～200W).Need remeasure plasma density when at this moment, having avoided plasmoid to change.And can demarcate the ion dose rate of injection of each position by this Controlling System.The result sets whole injection length in view of the above, can obtain the accurate control of implantation dosage.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165378A (en) * | 2011-12-12 | 2013-06-19 | 中国科学院微电子研究所 | Dose detection method used in plasma immersion implantation |
| CN106992107A (en) * | 2015-11-17 | 2017-07-28 | 朗姆研究公司 | System and method of the frequency modulation(PFM) radio-frequency power supply to control plasma instability |
| CN108074636A (en) * | 2017-12-26 | 2018-05-25 | 北京纳米维景科技有限公司 | A kind of surface incident dose computational methods, equipment and storage medium |
| CN114975051A (en) * | 2021-02-25 | 2022-08-30 | 南亚科技股份有限公司 | Substrate processing apparatus and method of adjusting ion implanter |
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| CN101015034A (en) * | 2004-04-02 | 2007-08-08 | 瓦里安半导体设备公司 | Faraday dose and uniformity monitor for plasma based ion implantion |
| CN101672920A (en) * | 2009-10-15 | 2010-03-17 | 复旦大学 | Plasma immersion implantation dosage calibration method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101015034A (en) * | 2004-04-02 | 2007-08-08 | 瓦里安半导体设备公司 | Faraday dose and uniformity monitor for plasma based ion implantion |
| CN101672920A (en) * | 2009-10-15 | 2010-03-17 | 复旦大学 | Plasma immersion implantation dosage calibration method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165378A (en) * | 2011-12-12 | 2013-06-19 | 中国科学院微电子研究所 | Dose detection method used in plasma immersion implantation |
| CN106992107A (en) * | 2015-11-17 | 2017-07-28 | 朗姆研究公司 | System and method of the frequency modulation(PFM) radio-frequency power supply to control plasma instability |
| CN106992107B (en) * | 2015-11-17 | 2019-02-19 | 朗姆研究公司 | System and method for frequency modulating a radio frequency power supply to control plasma instability |
| TWI724057B (en) * | 2015-11-17 | 2021-04-11 | 美商蘭姆研究公司 | Plasma processing systems and methods employing detection of plasma instability by optical diagnosis |
| CN108074636A (en) * | 2017-12-26 | 2018-05-25 | 北京纳米维景科技有限公司 | A kind of surface incident dose computational methods, equipment and storage medium |
| CN114975051A (en) * | 2021-02-25 | 2022-08-30 | 南亚科技股份有限公司 | Substrate processing apparatus and method of adjusting ion implanter |
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Application publication date: 20110316 |