CN101984557B - MEMS filter module working based on resonance theory - Google Patents
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- 238000001514 detection method Methods 0.000 claims abstract description 19
- 230000006641 stabilisation Effects 0.000 claims abstract description 18
- 238000011105 stabilization Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000306 component Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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Abstract
一种基于谐振原理工作的MEMS滤波器模块,包括:一差分信号产生电路;一MEMS滤波器芯片的第一输入端a与差分信号产生电路的输出端连接;一电压转换电路的输出端与该MEMS滤波器芯片的第二输入端b连接;一互阻放大电路的输入端与MEMS滤波器芯片的输出端b连接;一频率漂移检测电路的输入端与互阻放大电路的输出端连接;一频率稳定电路的输入端与频率漂移检测电路的输出端连接,该频率稳定电路输出端与MEMS滤波器芯片的第三输入端c连接,当互阻放大电路的输出信号的频率发生漂移时,提供相应的直流电压信号给滤波器芯片,使滤波器模块的输出信号的频率保持稳定。
A MEMS filter module based on the principle of resonance, comprising: a differential signal generating circuit; the first input terminal a of a MEMS filter chip is connected to the output terminal of the differential signal generating circuit; the output terminal of a voltage conversion circuit is connected to the The second input terminal b of the MEMS filter chip is connected; the input terminal of a transimpedance amplifying circuit is connected with the output terminal b of the MEMS filter chip; the input terminal of a frequency drift detection circuit is connected with the output terminal of the transimpedance amplifying circuit; The input end of the frequency stabilization circuit is connected with the output end of the frequency drift detection circuit, and the output end of the frequency stabilization circuit is connected with the third input end c of the MEMS filter chip, when the frequency of the output signal of the transimpedance amplifier circuit drifts, provide The corresponding DC voltage signal is sent to the filter chip to keep the frequency of the output signal of the filter module stable.
Description
技术领域 technical field
本发明是一种基于谐振原理工作的MEMS(微机械电子系统)滤波器模块,该滤波器包括MEMS滤波器芯片和相关电路芯片。其中MEMS滤波器芯片实现滤波功能,由谐振器阵列通过耦合结构连接形成,采用MEMS技术制造,相关电路芯片实现信号的输入、输出和稳定功能,采用集成电路制造工艺制造。MEMS滤波器芯片和电路芯片粘接一起混合封装。The invention is a MEMS (micro mechanical electronic system) filter module working on the basis of the resonance principle, and the filter includes a MEMS filter chip and related circuit chips. Among them, the MEMS filter chip realizes the filtering function, which is formed by the connection of the resonator array through the coupling structure, and is manufactured by MEMS technology. The related circuit chip realizes the signal input, output and stabilization functions, and is manufactured by the integrated circuit manufacturing process. The MEMS filter chip and the circuit chip are bonded together in a hybrid package.
背景技术 Background technique
随着移动通信领域的迅猛发展,通信系统逐渐向小型化、低功耗、低成本的方向发展。无线接收机是通信系统的重要组成部分,为了满足其高选择性窄带滤波的要求,无线接收机的前端使用了大量的片外高Q值分立元件,其中包括455kHz-254MHz的IF滤波器,常用的元件多为陶瓷滤波器和声表面波(SAW)滤波器。为了减少无线接收机的价格和尺寸,通常采用的方法是减少片外高Q值无源元件的使用数量,作为弥补要大大增加可集成电路的复杂性,如增加具有更高动态范围的ADC(模数转换电路),无疑提高了电源的消耗。实现单片式无线接收机是移动通信技术进一步发展的方向,采用与IC工艺兼容的MEMS技术制造出性能指标达到并超过现有分立元件的新型RF MEMS(微机电系统)和NEMS元件,并将其应用到无线接收机中具有非常重要的意义。在移动通信系统中应用MEMS技术,最重要的目标不是在于分立MEMS元件的应用,而是最终实现系统级的应用,即MEMS技术与IC工艺结合制造出具有高选择特性的新型结构的无线接收机,减少整个系统的复杂性,从本质上减少电源的消耗,且进一步提高接收机的性能。With the rapid development of the mobile communication field, the communication system gradually develops in the direction of miniaturization, low power consumption and low cost. The wireless receiver is an important part of the communication system. In order to meet the requirements of its highly selective narrowband filtering, the front end of the wireless receiver uses a large number of off-chip high-Q discrete components, including 455kHz-254MHz IF filters, commonly used Most of the components are ceramic filters and surface acoustic wave (SAW) filters. In order to reduce the price and size of the wireless receiver, the usual method is to reduce the number of off-chip high-Q passive components used, as a compensation to greatly increase the complexity of the integrated circuit, such as adding an ADC with a higher dynamic range ( Analog-to-digital conversion circuit), undoubtedly increased power consumption. The realization of a single-chip wireless receiver is the direction of further development of mobile communication technology. Using MEMS technology compatible with IC technology to manufacture new RF MEMS (micro-electromechanical systems) and NEMS components whose performance indicators reach and exceed existing discrete components, and will It is of great significance to apply it to wireless receivers. In the application of MEMS technology in mobile communication systems, the most important goal is not the application of discrete MEMS components, but the ultimate realization of system-level applications, that is, the combination of MEMS technology and IC technology to produce a wireless receiver with a new structure with high selectivity , reduce the complexity of the whole system, reduce power consumption substantially, and further improve the performance of the receiver.
发明内容 Contents of the invention
本发明的目的在于提供一种基于谐振原理工作的MEMS(微机械电子系统)滤波器模块,其具有体积小、成本低、制作工艺与集成电路制造工艺兼容、高可靠性、低功耗的优点。The object of the present invention is to provide a MEMS (micro-mechanical electronic system) filter module based on the principle of resonance, which has the advantages of small size, low cost, compatible manufacturing process and integrated circuit manufacturing process, high reliability, and low power consumption .
本发明提供一种基于谐振原理工作的MEMS滤波器模块,包括:The invention provides a MEMS filter module based on the resonance principle, comprising:
一差分信号产生电路,该差分信号产生电路的一端为信号输入端,另一端为信号输出端,作用是把输入信号转换为同频反相的两路信号,提供给MEMS滤波器芯片作为工作电压;A differential signal generation circuit, one end of the differential signal generation circuit is the signal input end, the other end is the signal output end, the function is to convert the input signal into two signals of the same frequency and opposite phase, and provide them to the MEMS filter chip as the working voltage ;
一MEMS滤波器芯片,该MEMS滤波器芯片的第一输入端a与差分信号产生电路的输出端连接,接收差分信号产生电路输出的两路同频反相信号,并对其进行滤波处理,选择输出相应频带内的信号;A MEMS filter chip, the first input terminal a of the MEMS filter chip is connected to the output terminal of the differential signal generating circuit, receives two channels of the same frequency and anti-phase signals output by the differential signal generating circuit, and performs filtering processing on it, and selects Output signals in the corresponding frequency band;
一电压转换电路,该电压转换电路的输出端与该MEMS滤波器芯片的第二输入端b连接,作用是将外界输入的直流电压转换为MEMS滤波器芯片达到静电谐振工作状态需要的直流偏压;A voltage conversion circuit, the output terminal of the voltage conversion circuit is connected to the second input terminal b of the MEMS filter chip, and its function is to convert the DC voltage input from the outside into the DC bias voltage required by the MEMS filter chip to achieve the electrostatic resonance working state ;
一互阻放大电路,该互阻放大电路的输入端与MEMS滤波器芯片的输出端b连接,把MEMS滤波器芯片的输出电流信号转换为电压信号;A transimpedance amplifying circuit, the input terminal of the transimpedance amplifying circuit is connected with the output terminal b of the MEMS filter chip, and the output current signal of the MEMS filter chip is converted into a voltage signal;
一频率漂移检测电路,该频率漂移检测电路的输入端与互阻放大电路的输出端连接,用于检测互阻放大电路的输出信号的频率漂移情况,当输出信号的频率发生漂移时,输出预警信号;A frequency drift detection circuit, the input terminal of the frequency drift detection circuit is connected to the output terminal of the transimpedance amplifier circuit, and is used to detect the frequency drift of the output signal of the transimpedance amplifier circuit, and when the frequency of the output signal drifts, an early warning is output Signal;
一频率稳定电路,该频率稳定电路的输入端与频率漂移检测电路的输出端连接,该频率稳定电路输出端与MEMS滤波器芯片的第三输入端c连接,当互阻放大电路的输出信号的频率发生漂移时,提供相应的直流电压信号给滤波器芯片,使滤波器模块的输出信号的频率保持稳定。A frequency stabilization circuit, the input end of the frequency stabilization circuit is connected with the output end of the frequency drift detection circuit, the output end of the frequency stabilization circuit is connected with the third input end c of the MEMS filter chip, when the output signal of the transimpedance amplifier circuit When the frequency drifts, a corresponding DC voltage signal is provided to the filter chip to keep the frequency of the output signal of the filter module stable.
其中所述滤波器芯片基于静电谐振原理工作,谐振模式包括横向谐振模式、纵向谐振模式或径向谐振模式。Wherein the filter chip works based on the electrostatic resonance principle, and the resonance mode includes a transverse resonance mode, a longitudinal resonance mode or a radial resonance mode.
其中所述滤波器芯片的工作频率由滤波器芯片内部的谐振器结构决定,频率范围在1kHz-5GHz,工作带宽由滤波器芯片内部的耦合结构决定,工作带宽为1kHz-100MHz。The working frequency of the filter chip is determined by the resonator structure inside the filter chip, and the frequency range is 1kHz-5GHz. The working bandwidth is determined by the coupling structure inside the filter chip, and the working bandwidth is 1kHz-100MHz.
其中所述滤波器芯片的衬底材料包括硅、蓝宝石、碳化硅、氮化镓、砷化镓或石英玻璃。Wherein the substrate material of the filter chip includes silicon, sapphire, silicon carbide, gallium nitride, gallium arsenide or quartz glass.
其中所述滤波器芯片的品质因数由工作压强决定。Wherein the quality factor of the filter chip is determined by the working pressure.
附图说明 Description of drawings
为进一步说明本发明的内容及特点,以下结合附图及实施例对本发明作一详细的描述,其中:In order to further illustrate the content and characteristics of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments, wherein:
图1是本发明实施例的滤波器模块的结构的原理框图。FIG. 1 is a functional block diagram of the structure of a filter module according to an embodiment of the present invention.
具体实施方式 Detailed ways
请参阅图1所示,本发明提供一种基于谐振原理工作的MEMS滤波器模块,包括:Please refer to shown in Fig. 1, the present invention provides a kind of MEMS filter module based on resonance principle work, comprising:
一差分信号产生电路12,该差分信号产生电路12的一端为信号输入端,另一端为信号输出端,与MEMS滤波器芯片16的第一输入端a连接,作用是把输入信号转换为同频反相的两路信号,提供给MEMS滤波器芯片16作为工作电压;所述MEMS滤波器芯片16基于静电谐振原理工作,谐振模式包括横向谐振模式、纵向谐振模式或径向谐振模式;所述MEMS滤波器芯片16的工作频率由MEMS滤波器芯片16内部的谐振器结构决定,频率范围在1kHz-5GHz,工作带宽由MEMS滤波器芯片16内部的耦合结构决定,工作带宽为1kHz-100MHz;所述MEMS滤波器芯片16的衬底材料包括硅、蓝宝石、碳化硅、氮化镓、砷化镓或石英玻璃;所述MEMS滤波器芯片16的品质因数由工作压强决定。A differential signal generation circuit 12, one end of the differential signal generation circuit 12 is a signal input end, the other end is a signal output end, connected with the first input end a of the MEMS filter chip 16, and the effect is to convert the input signal into the same frequency The two-way signals of opposite phases are provided to the MEMS filter chip 16 as an operating voltage; the MEMS filter chip 16 works based on the electrostatic resonance principle, and the resonance mode includes a transverse resonance mode, a longitudinal resonance mode or a radial resonance mode; the MEMS The operating frequency of the filter chip 16 is determined by the internal resonator structure of the MEMS filter chip 16, and the frequency range is 1kHz-5GHz, and the operating bandwidth is determined by the coupling structure inside the MEMS filter chip 16, and the operating bandwidth is 1kHz-100MHz; The substrate material of the MEMS filter chip 16 includes silicon, sapphire, silicon carbide, gallium nitride, gallium arsenide or quartz glass; the quality factor of the MEMS filter chip 16 is determined by the working pressure.
一MEMS滤波器芯片16,该MEMS滤波器芯片16的第一输入端a与差分信号产生电路12的输出端连接,接收差分信号产生电路输出的两路同频反相信号,并对其进行滤波处理,选择输出相应频带的信号;A MEMS filter chip 16, the first input terminal a of the MEMS filter chip 16 is connected to the output terminal of the differential signal generating circuit 12, receives two channels of same-frequency and anti-phase signals output by the differential signal generating circuit, and filters it Processing, select and output the signal of the corresponding frequency band;
一电压转换电路11,该电压转换电路11的输出端与该MEMS滤波器芯片16的第二输入端b连接,作用是将外界输入的直流电压转换为MEMS滤波器芯片16达到静电谐振工作状态需要的直流偏压;A voltage conversion circuit 11, the output terminal of the voltage conversion circuit 11 is connected to the second input terminal b of the MEMS filter chip 16, and the effect is to convert the DC voltage input from the outside into the MEMS filter chip 16 to reach the electrostatic resonance working state. DC bias voltage;
一互阻放大电路13,该互阻放大电路13的输入端与MEMS滤波器芯片16的输出端b连接,把MEMS滤波器芯片16的输出电流信号转换为电压信号;A transimpedance amplifying circuit 13, the input end of the transimpedance amplifying circuit 13 is connected with the output terminal b of the MEMS filter chip 16, and the output current signal of the MEMS filter chip 16 is converted into a voltage signal;
一频率漂移检测电路14,该频率漂移检测电路14的输入端与互阻放大电路13的输出端连接,用于检测互阻放大电路13的输出信号的频率漂移情况,当输出信号的频率发生漂移时,输出预警信号;A frequency drift detection circuit 14, the input terminal of the frequency drift detection circuit 14 is connected with the output terminal of the transimpedance amplifier circuit 13, and is used to detect the frequency drift situation of the output signal of the transimpedance amplifier circuit 13, when the frequency of the output signal drifts , output an early warning signal;
一频率稳定电路15,该频率稳定电路15的输入端与频率漂移检测电路14的输出端连接,该频率稳定电路15输出端与MEMS滤波器芯片16的第三输入端c连接,当互阻放大电路13的输出信号的频率发生漂移时,提供相应的直流电压信号给MEMS滤波器芯片16,使滤波器模块的输出信号的频率保持稳定。A frequency stabilization circuit 15, the input terminal of the frequency stabilization circuit 15 is connected with the output terminal of the frequency drift detection circuit 14, the output terminal of the frequency stabilization circuit 15 is connected with the third input terminal c of the MEMS filter chip 16, when the transimpedance amplification When the frequency of the output signal of the circuit 13 drifts, a corresponding DC voltage signal is provided to the MEMS filter chip 16 to keep the frequency of the output signal of the filter module stable.
图1是说明本发明实施例的滤波器模块的结构的原理框图。在图示情况下,该滤波器包括MEMS滤波器芯片16和相关电路芯片11、12、13、14和15。其中MEMS滤波器芯片16是模块的核心元件,基于谐振原理实现电学信号的滤波功能,通常由谐振器通过耦合结构连接形成,采用MEMS技术制造。相关电路芯片包括5个部分,电压转换电路11,差分信号产生电路12,互阻放大电路13,频率漂移检测电路14和频率稳定电路15,实现信号的输入、输出和频率稳定功能,采用集成电路制造工艺制造。MEMS滤波器芯片16和电路芯片11、12、13、14和15粘接一起混合封装。FIG. 1 is a functional block diagram illustrating the structure of a filter module of an embodiment of the present invention. In the illustrated case, the filter comprises a MEMS filter chip 16 and associated circuit chips 11 , 12 , 13 , 14 and 15 . Among them, the MEMS filter chip 16 is the core component of the module, which realizes the filtering function of electrical signals based on the resonance principle, and is usually formed by connecting resonators through a coupling structure, and is manufactured by MEMS technology. The relevant circuit chip includes 5 parts, a voltage conversion circuit 11, a differential signal generation circuit 12, a transimpedance amplifier circuit 13, a frequency drift detection circuit 14 and a frequency stabilization circuit 15, which realize signal input, output and frequency stabilization functions. Manufacturing process manufacturing. The MEMS filter chip 16 and the circuit chips 11 , 12 , 13 , 14 and 15 are bonded together and packaged in a mixed manner.
MEMS滤波器芯片16由耦合梁连接两个或多个谐振器组合而成,谐振器结构为两端固支梁结构、单端固支梁结构、自由梁结构、圆盘结构、环形结构或梳齿状结构,谐振模式包括横向谐振模式、纵向谐振模式或径向谐振模式。器件的中心频率为谐振器的频率,由谐振器的结构尺寸决定,带宽由耦合梁的结构尺寸决定。MEMS滤波器芯片16为静电感应激励谐振方式。在输出端,谐振结构和固定极板形成一个可变电容,在静电力作用下,谐振结构发生振动,引起输出电容值发生变化,变化的电容在直流电压的作用下会产生一个电流信号,从而可以把机械振动信号转换成电学信号。当输入端的交流电学信号的频率达到MEMS滤波器芯片16的谐振频率时,MEMS滤波器芯片16的谐振结构发生谐振,谐振时振动的振幅最大,在输出端,输出电流信号明显增大。MEMS滤波器芯片16具有多阶谐振模式,其一阶谐振模式和二阶谐振模式下振动幅度较大,通过调整MEMS滤波器芯片16输入输出端的电阻值,可以使MEMS滤波器芯片16在介于一阶谐振频率和二阶谐振频率之间的频点电压作用下也发生幅值较大的振动。最终,在MEMS滤波器芯片16的输出端,可以得到一个有效的滤波信号,通频带介于MEMS滤波器16的一阶谐振频率和二阶谐振频率之间,从而以机械谐振的方式实现电学信号的滤波功能。MEMS filter chip 16 is composed of two or more resonators connected by a coupling beam. In the toothed structure, the resonant mode includes a transverse resonant mode, a longitudinal resonant mode or a radial resonant mode. The center frequency of the device is the frequency of the resonator, which is determined by the structural size of the resonator, and the bandwidth is determined by the structural size of the coupling beam. The MEMS filter chip 16 adopts an electrostatic induction excitation resonance method. At the output end, the resonant structure and the fixed plate form a variable capacitance. Under the action of electrostatic force, the resonant structure vibrates, causing the value of the output capacitance to change. The changed capacitance will generate a current signal under the action of DC voltage, thus The mechanical vibration signal can be converted into an electrical signal. When the frequency of the AC electrical signal at the input end reaches the resonant frequency of the MEMS filter chip 16, the resonant structure of the MEMS filter chip 16 resonates, and the amplitude of the vibration is the largest during the resonant time. At the output end, the output current signal increases significantly. The MEMS filter chip 16 has a multi-order resonance mode, and the vibration amplitude is relatively large under its first-order resonance mode and the second-order resonance mode. Vibrations with larger amplitudes also occur under the action of the frequency point voltage between the first-order resonance frequency and the second-order resonance frequency. Finally, at the output end of the MEMS filter chip 16, an effective filtered signal can be obtained, and the passband is between the first-order resonant frequency and the second-order resonant frequency of the MEMS filter 16, thereby realizing the electrical signal in a mechanically resonant manner. filtering function.
电压转换电路11,作用是将直流电压转换为激励MEMS滤波器芯片16静电谐振工作需要的直流偏压。集成电路IC通常在固定的直流偏置下工作,如3V、5V、10V,因此,所述滤波器模块的供电直流电压为固定值,由相关电路芯片11、12、13、14、15的工作电压决定。而MEMS滤波器芯片16需要相对较高的直流电压才能达到谐振工作状态。电压转换电路11是一个升压模块,把外界提供的直流电压升到MEMS滤波器芯片16实现谐振工作的电压值。The function of the voltage conversion circuit 11 is to convert the DC voltage into a DC bias voltage required to excite the electrostatic resonance of the MEMS filter chip 16 . The integrated circuit IC usually works under a fixed DC bias, such as 3V, 5V, and 10V. Therefore, the power supply DC voltage of the filter module is a fixed value, which is determined by the work of the relevant circuit chips 11, 12, 13, 14, and 15. Voltage depends. However, the MEMS filter chip 16 requires a relatively high DC voltage to achieve a resonant working state. The voltage conversion circuit 11 is a boost module, which boosts the DC voltage provided by the outside to the voltage value of the MEMS filter chip 16 to realize resonance operation.
差分信号产生电路12,作用是把输入信号转换为同频反相的两路信号,提供给MEMS滤波器芯片16作为交流激励工作电压。由于寄生信号和穿通信号的影响,MEMS滤波器芯片16的输出信号提取工作比较困难,为了有效解决这个问题,需要采用差分的方法。当MEMS滤波器芯片16输入两路同频反相的两路信号时,由固定电容产生的寄生信号和穿通信号,因为等幅同频反相可以相互抵消,输出信号中仅保留下有效的谐振滤波信号供提取。The differential signal generation circuit 12 is used to convert the input signal into two signals of the same frequency and opposite phase, and provide them to the MEMS filter chip 16 as an AC excitation working voltage. Due to the influence of the spurious signal and the pass-through signal, it is difficult to extract the output signal of the MEMS filter chip 16 . In order to effectively solve this problem, a differential method is required. When the MEMS filter chip 16 inputs two signals with the same frequency and opposite phases, the parasitic signal and the pass-through signal generated by the fixed capacitor can cancel each other because of the same amplitude and the same frequency and reverse phase, and only the effective ones are retained in the output signal. Resonance filtered signal for extraction.
互阻放大电路13,作用是把MEMS滤波器16的输出信号由电流信号转换为电压信号。MEMS滤波器芯片16的输出信号极小,为nA量级,必须转换成mV级的电流信号才有实用价值。互阻放大电路13,必须是高输入阻抗、低噪声和宽频带高频放大器。The function of the transimpedance amplifier circuit 13 is to convert the output signal of the MEMS filter 16 from a current signal to a voltage signal. The output signal of the MEMS filter chip 16 is extremely small, on the order of nA, and must be converted into a current signal of the mV level to be of practical value. The transimpedance amplifying circuit 13 must be a high-input impedance, low-noise and broadband high-frequency amplifier.
频率漂移检测电路14,作用是实时检测MEMS滤波器16的输出信号频率漂移情况。MEMS滤波器16是微机械结构,其谐振频率由结构尺寸和材料特性决定,因此在外界环境发生变化时,频率会发生漂移。如外界温度升高时,MEMS滤波器16的结构材料的杨氏模量增加,谐振频率会增加。频率漂移检测电路14可以实时检测互阻放大电路13的输出信号频率漂移情况,在输出信号的频率发生漂移的情况下,输出预警信号给频率稳定电路15,频率漂移检测电路14包括信号频率检测单元、计数器单元和频率误差输出单元。The frequency drift detection circuit 14 is used to detect the frequency drift of the output signal of the MEMS filter 16 in real time. The MEMS filter 16 is a micro-mechanical structure, and its resonant frequency is determined by the structure size and material properties, so when the external environment changes, the frequency will drift. For example, when the external temperature rises, the Young's modulus of the structural material of the MEMS filter 16 increases, and the resonant frequency increases. The frequency drift detection circuit 14 can detect the output signal frequency drift situation of the transimpedance amplifier circuit 13 in real time, and when the frequency of the output signal drifts, the output warning signal is given to the frequency stabilization circuit 15, and the frequency drift detection circuit 14 includes a signal frequency detection unit , Counter unit and frequency error output unit.
频率稳定电路15,作用是根据频率漂移检测电路14的输出信号,及时输出相应的电压信号给MEMS滤波器芯片16,以稳定滤波器频率。MEMS滤波器16的谐振频率除了跟外界环境有关以外,受直流偏置电压影响较大,因此可以通过调节直流偏置电压来及时调整MEMS滤波器芯片16的谐振频率。频率稳定电路15,在收到频率漂移检测电路14的输出信号后,进行分析,如果是频率已经发生漂移的预警信号,则需要根据预警信号的信息,及时输出一个调节用直流偏置电压给MEMS滤波器芯片16,及时调整MEMS滤波器16的谐振频率。使MEMS滤波器16在外界情况发生变化的情况下,输出信号频率保持稳定。The function of the frequency stabilization circuit 15 is to output a corresponding voltage signal to the MEMS filter chip 16 in time according to the output signal of the frequency drift detection circuit 14, so as to stabilize the filter frequency. The resonant frequency of the MEMS filter 16 is not only related to the external environment, but also greatly affected by the DC bias voltage, so the resonant frequency of the MEMS filter chip 16 can be adjusted in time by adjusting the DC bias voltage. The frequency stabilization circuit 15, after receiving the output signal of the frequency drift detection circuit 14, analyzes it. If it is an early warning signal that the frequency has drifted, it needs to output a DC bias voltage for adjustment to the MEMS in time according to the information of the early warning signal. The filter chip 16 adjusts the resonant frequency of the MEMS filter 16 in time. The frequency of the output signal of the MEMS filter 16 is kept stable when the external conditions change.
电压转换电路11,差分信号产生电路12,互阻放大电路13,频率漂移检测电路14和频率稳定电路15,集成在同一个硅片上,采用集成电路制造工艺制造。The voltage conversion circuit 11, the differential signal generation circuit 12, the transimpedance amplifier circuit 13, the frequency drift detection circuit 14 and the frequency stabilization circuit 15 are integrated on the same silicon chip and manufactured by an integrated circuit manufacturing process.
虽然已参照具体实施例的结构原理框图进一步详细描述了本发明基于谐振原理工作的MEMS(微机械电子系统)滤波器模块的结构情况,但这些描述仅是说明性和示例性的,并非对本发明的限制。对于那些熟悉本领域的技术人员而言应能理解,可对其形式和细节作出多种可能的改型和变化,而不脱离所附权利要求限定的本发明的范围。Although the structural situation of the MEMS (micro-mechanical electronic system) filter module of the present invention based on the resonant principle work has been further described in detail with reference to the structural principle block diagram of the specific embodiment, these descriptions are only illustrative and exemplary, and are not specific to the present invention. limits. It will be understood to those skilled in the art that various possible modifications and changes in form and details may be made therein without departing from the scope of the present invention as defined in the appended claims.
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