CN101976753A - Low third-order intermodulation coaxial microstrip conversion device - Google Patents
Low third-order intermodulation coaxial microstrip conversion device Download PDFInfo
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- CN101976753A CN101976753A CN2010105115357A CN201010511535A CN101976753A CN 101976753 A CN101976753 A CN 101976753A CN 2010105115357 A CN2010105115357 A CN 2010105115357A CN 201010511535 A CN201010511535 A CN 201010511535A CN 101976753 A CN101976753 A CN 101976753A
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- order intermodulation
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- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 claims abstract description 30
- 230000007704 transition Effects 0.000 claims description 20
- 238000004080 punching Methods 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
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Abstract
The invention discloses a low third-order intermodulation (IM3) coaxial microstrip conversion device which comprises a conducting strip (1), a base plate (2), a face plate (3), a coaxial inner conductor (4) and a coaxial outer conductor (5), wherein a circular punched hole (6) is arranged on the face plate (3); the coaxial inner conductor (4) passes through the face plate (3) and is fixed on the conducting strip (1). The device is characterized in that the diameter of the circular punched hole (6) is slightly larger than the outer diameter of the coaxial outer conductor (5), and a flange plate (7) connected with the coaxial outer conductor (5) is fixed on the back face of the face plate (3). The high-frequency current path on the inner wall of the coaxial outer conductor is changed by changing the connection mode of the adapter flange plate and the face plate, and the high-frequency current flows into the base plate from the surface of the flange plate through the edge without passing through a gap in the punched hole, thus, produced IM3 is small, and IM3 is less than -107 dBm and can reach -118 dBm.
Description
Technical field
The present invention relates to mobile communication (GSM, CDMA) base station antenna arrangement, be specifically related to a kind of low third order intermodulation coaxial-the microstrip transitions device.
Background technology
The microstrip antenna that with the air is medium has the characteristics such as quick, that cost is lower, functional of producing.In mobile communication system extensively as antenna for base station.This class antenna mainly is made up of base plate and conduction band (being collectively referred to as microstrip transmission line), radiant body and coaxial-microstrip transitions joint etc.During work, high-frequency current is coupled to the electromagnetic field that produces definite shape on the radiant body by coaxial feed-in by microstrip line, to satisfy communicating requirement.Third order intermodulation (IM3=-107dBm) is one of the key technical indexes of this class antenna, and IM3 not up to standard be a long-standing problem.So-called " always " is not solve for many years; So-called " greatly " is that the antenna consumption is huge, and be big to the communication quality influence; So-called " difficulty " is that the IM3 mechanism of production is unclear, and many effects of working are little.
In order to solve antenna IM3 problem, the inventor tests coaxial-microstrip transitions device wherein.
Existing coaxial-the microstrip transitions device connects to form by crossover sub (comprising coaxial inner and outer conductor and ring flange), base plate, panel and conduction band, as shown in Figure 1: wherein conduction band and base plate are the thick aluminium sheet of 2mm, panel is formed by the base plate bending, on a circular punching is arranged, diameter equals the coaxial outer conductor internal diameter.Be installed in panel front with coaxial outer conductor flange connecting dish, fastening by screw, the punching that coaxial inner conductor passes on the panel is connected with conduction band, and is fastening by nut.Crossover sub is made by brass usually, and inner wire is silver-plated, outer conductor and ring flange plating ternary alloy three-partalloy.Circular punching on the panel and panel are without electroplating processes.This moment, the IM3 with the special test equipment test on average was about-98dBm poor-performing.
Cause the principal element of higher IM3 to have: one, jagged around the punching; Two, punching distortion; Three punchings place are connected defective tightness with flange, and the slit is bigger.Thereby produce higher IM3 during by these burrs and slit when the high-frequency current on the coaxial outer conductor inwall.
For addressing this problem, can screw screw and strengthen contact pressure, or on the flange of crossover sub, add the little ring of a projection, but improve not obvious.Also can adopt and electroplate deburring or thicken the method that base plate reduces to be out of shape, but the method cost will obviously increase.
Summary of the invention
Goal of the invention: the objective of the invention is at the deficiencies in the prior art, a kind of coaxial-microstrip transitions device that significantly reduces third order intermodulation under the not obvious prerequisite that raises the cost is provided.
Technical scheme: low third order intermodulation of the present invention is coaxial-the microstrip transitions device, as shown in Figure 2, comprise conduction band, base plate, panel, coaxial inner conductor, coaxial outer conductor and ring flange.Described panel is provided with circular punching, described coaxial inner conductor passes described panel and is fixed on the described conduction band, the slightly larger in diameter of described circular punching is fixed on the back side of described panel with described coaxial outer conductor flange connecting dish in the external diameter of described coaxial outer conductor.
Described ring flange is bigger square flange, in order to reduce the variation of little band characteristic impedance, help simultaneously and coaxial coupling, and further reduce IM3, one side the close described base plate of described ring flange be provided with the slope.
Described conduction band bends to keep characteristic impedance herein constant at the place, slope.
Described coaxial inner conductor is fixed on the described conduction band by nut.
Described ring flange passes through thicker screw on the back side of described panel.
Described base plate is the thick aluminium sheet of 2mm, and panel is formed by the base plate bending.
The ring flange of crossover sub of the present invention is installed in the back side of panel, forms a slit between ring flange edge and panel, and its advantage has four:
(1), the smooth no burr of slit place surface of aluminum plate, ring flange is like this equally;
(2), slit place aluminium sheet is not yielding, the contact slit is less;
(3), the slit is longer, help high-frequency current and pass through;
(4), trip bolt pressure is big, the slit is little.
Beneficial effect: the present invention compared with prior art, its beneficial effect is: 1, the inventor is by changing the connected mode of ring flange and panel, thereby change the high-frequency current path of coaxial outer conductor inwall, high-frequency current flows into base plate from the ring flange surface through the edge, by the slit of punching place, therefore the IM3 that produces can not arrive-118dBm for a short time; 2, there is the slope on one side of square flange of the present invention, can reduce the variation of little band characteristic impedance, helps and coaxial coupling, also helps reducing IM3; 3, adopt apparatus of the present invention can significantly improve existing antenna for base station IM3 performance, if cooperate the IM3 that improves radiant body just can solve microstrip type antenna for base station IM3 problem not up to standard substantially again; 4, apparatus of the present invention are with low cost, the cost performance height; 5, novel thinking of the present invention also has important value to (the IM3 index request is arranged) all kinds of antennas and the device of other other purposes of frequency range.
Description of drawings
Fig. 1 be existing coaxial-structural representation of microstrip transitions device;
Fig. 2 be low third order intermodulation of the present invention coaxial-structural representation of microstrip transitions device;
Fig. 3 is the square flange structural representation.
Embodiment
Below in conjunction with accompanying drawing, by a most preferred embodiment, technical solution of the present invention is elaborated, but protection scope of the present invention is not limited to described embodiment.
Embodiment: a kind of low third order intermodulation is coaxial-the microstrip transitions device, comprise conduction band 1, base plate 2, panel 3, coaxial inner conductor 4 and coaxial outer conductor 5, described base plate 2 is the thick aluminium sheet of 2mm, described panel 3 is formed by base plate 2 bendings, described panel 3 is provided with circular punching 6, described coaxial inner conductor 4 passes described panel 3 and is fixed on the described conduction band 1 by nut, the slightly larger in diameter of described circular punching 6 is in the external diameter of described coaxial outer conductor 5, with described coaxial outer conductor 5 flange connecting dishes 7 by screw on the back side of described panel 3; Described ring flange 7 is a square flange, one side it is near the slope that is provided with of described base plate 2.
Further specify the performance of apparatus of the present invention below by contrast test.Under conduction band, the undressed condition of aluminium sheet material similar face, working frequency range is 900MHz.
First group: adopt to have coaxial-microstrip transitions device now.
Second group: adopt the present invention coaxial-the microstrip transitions device, but ring flange is not provided with the slope.
The 3rd group: the described low third order intermodulation of present embodiment is coaxial-the microstrip transitions device.
Testing result: the testing mean of the IM3 of first group of device is-98dBm that the testing mean of the IM3 of second group of device is-115dBm that the testing mean of the IM3 of the 3rd group of device is-118dBm.
This shows, the present invention is low, and third order intermodulation is coaxial-and the IM3 performance of microstrip transitions device has significantly than prior art and improves.
As mentioned above, although represented and explained the present invention that with reference to specific preferred embodiment it shall not be construed as the restriction to the present invention self.Under the spirit and scope of the present invention prerequisite that does not break away from the claims definition, can make various variations in the form and details to it.
Claims (6)
- A low third order intermodulation coaxial-the microstrip transitions device, comprise conduction band (1), base plate (2), panel (3), coaxial inner conductor (4) and coaxial outer conductor (5), described panel (3) is provided with circular punching (6), described coaxial inner conductor (4) passes described panel (3) and is fixed on the described conduction band (1), it is characterized in that: the slightly larger in diameter of described circular punching (6) is fixed on the back side (32) of described panel (3) with described coaxial outer conductor (5) flange connecting dish (7) in the external diameter of described coaxial outer conductor (5).
- 2. low third order intermodulation according to claim 1 is coaxial-the microstrip transitions device, and it is characterized in that: described ring flange (7) is a square flange.
- 3. low third order intermodulation according to claim 2 is coaxial-the microstrip transitions device, it is characterized in that: the close described base plate (2) of described ring flange (7) one side be provided with the slope.
- 4. low third order intermodulation according to claim 1 is coaxial-the microstrip transitions device, and it is characterized in that: described coaxial inner conductor (4) is fixed on described little band (1) by nut.
- 5. low third order intermodulation according to claim 1 is coaxial-the microstrip transitions device, it is characterized in that: described ring flange (7) by screw on the back side of described panel (3).
- 6. low third order intermodulation according to claim 1 is coaxial-the microstrip transitions device, it is characterized in that: described base plate and described panel the thick aluminium sheet of 2mm for handling without electroplating surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105115357A CN101976753A (en) | 2010-10-19 | 2010-10-19 | Low third-order intermodulation coaxial microstrip conversion device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105115357A CN101976753A (en) | 2010-10-19 | 2010-10-19 | Low third-order intermodulation coaxial microstrip conversion device |
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| CN101976753A true CN101976753A (en) | 2011-02-16 |
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| CN2010105115357A Pending CN101976753A (en) | 2010-10-19 | 2010-10-19 | Low third-order intermodulation coaxial microstrip conversion device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103326101A (en) * | 2013-05-20 | 2013-09-25 | 中国电子科技集团公司第四十一研究所 | Method for assembling transferring of broadband high-performance coaxial-ceramic dielectric substrate micro-strip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4994771A (en) * | 1989-06-28 | 1991-02-19 | Hughes Aircraft Company | Micro-connector to microstrip controlled impedance interconnection assembly |
| JPH03165604A (en) * | 1989-11-24 | 1991-07-17 | Toshiba Corp | Microstrip line-coaxial line converter |
| CN2727986Y (en) * | 2004-08-30 | 2005-09-21 | 西安海天天线科技股份有限公司 | Broadband microstrip base station array antenna |
| CN201853792U (en) * | 2010-10-19 | 2011-06-01 | 江苏捷士通科技股份有限公司 | Coaxial-to-microstrip conversion device with low third-order intermodulation |
-
2010
- 2010-10-19 CN CN2010105115357A patent/CN101976753A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4994771A (en) * | 1989-06-28 | 1991-02-19 | Hughes Aircraft Company | Micro-connector to microstrip controlled impedance interconnection assembly |
| JPH03165604A (en) * | 1989-11-24 | 1991-07-17 | Toshiba Corp | Microstrip line-coaxial line converter |
| CN2727986Y (en) * | 2004-08-30 | 2005-09-21 | 西安海天天线科技股份有限公司 | Broadband microstrip base station array antenna |
| CN201853792U (en) * | 2010-10-19 | 2011-06-01 | 江苏捷士通科技股份有限公司 | Coaxial-to-microstrip conversion device with low third-order intermodulation |
Non-Patent Citations (3)
| Title |
|---|
| 《机电元件》 20050630 李明德 无源交调干扰（PIMI）的产生与预防--射频连接器低PIM 设计 第3-16页 1-6 第25卷, 第2期 * |
| 李明德: "无源交调干扰（PIMI）的产生与预防——射频连接器低PIM 设计", 《机电元件》 * |
| 胡玉格等: "微带过渡型同轴连接器的设计与实现", 《连接器与开关第十一界学术会议论文集》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103326101A (en) * | 2013-05-20 | 2013-09-25 | 中国电子科技集团公司第四十一研究所 | Method for assembling transferring of broadband high-performance coaxial-ceramic dielectric substrate micro-strip |
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Application publication date: 20110216 |