CN101962748B - Method for plating conductive film on surface of polytetrafluoroethylene by adopting arc ion plating technology - Google Patents

Abstract

The invention relates to a method for plating a conductive film on the surface of polytetrafluoroethylene by using an arc ion plating technology, and belongs to the technical field of surface engineering. Using the arc ion plating technology, the method of heating the workpiece, ion beam cleaning and plating the transition layer is adopted in turn, and the conductive film is plated on the surface of the polytetrafluoroethylene, and the polytetrafluoroethylene workpiece is placed in a vacuum chamber and heated; Ar and _O2 are introduced Open the ion source to clean the PTFE workpiece with ion beam; close the ion source and gas supply system, open the Cr or NiCr arc source, plate Cr or NiCr transition layer; close the Cr or NiCr arc source; add pulse bias Press, turn on the Al, Cu or Au arc source, and plate Al, Cu or Au conductive film. The metal conductive film coated on the surface of polytetrafluoroethylene in the invention has the advantages of dense film, firm adhesion, uniform and controllable thickness, can realize complex curved surface workpiece coating, etc., and reaches the engineering application level.

Description

Method for Plating Conductive Thin Film on Polytetrafluoroethylene Surface Using Arc Ion Plating Technology

technical field

The invention relates to a method for plating a conductive film on the surface of polytetrafluoroethylene by using an arc ion plating technology, that is, a method for plating a conductive film on the surface of polytetrafluoroethylene by arc ion plating for the purpose of making a microstrip circuit, and belongs to the technical field of surface engineering.

Background technique

Due to the poor matching between PTFE and metal materials, it is very difficult to prepare a metal film on the surface of PTFE. Therefore, there are relatively few studies on the vacuum metallization film on the surface of PTFE, especially the use of arc ion plating technology. There is no report on the research on surface coating of polytetrafluoroethylene substrate. The invention utilizes technical means such as heating workpieces, cleaning ion beams, plating transition layers, etc., effectively improves the adhesion of conductive films, and solves the technical problem of preparing metal films on the surface of polytetrafluoroethylene.

Contents of the invention

The purpose of the present invention is to solve the problem of poor matching between polytetrafluoroethylene and metal materials, and proposes a method of using arc ion plating technology to plate a conductive film on the surface of polytetrafluoroethylene. Due to the advantages of high conversion rate and high adhesion of the prepared film, arc ion plating technology was used to study the coating on the surface of polytetrafluoroethylene substrate, especially through heating and ion beam cleaning, which improved the activity of the surface of polytetrafluoroethylene; at the same time, the plating The transition layer increases the matching between the polytetrafluoroethylene and the conductive film, thereby improving the adhesion of the conductive film on the surface of the polytetrafluoroethylene.

The purpose of the present invention is achieved through the following technical solutions.

The method for plating conductive film on the surface of polytetrafluoroethylene using arc ion plating technology of the present invention uses arc ion plating technology to sequentially adopt the method of heating workpiece, ion beam cleaning and plating transition layer to plate conductive film on the surface of polytetrafluoroethylene , the specific steps are:

1) Put the polytetrafluoroethylene workpiece into the vacuum chamber, then evacuate, the vacuum degree is ≤5×10 ^-3 a, keep it for not less than 2h, and then heat the polytetrafluoroethylene workpiece to 100-150°C;

2) Open the gas supply system, introduce the mixed gas of Ar and _O2 into the vacuum chamber in step 1), the volume ratio of Ar and _O2 is 1:1, and keep the vacuum degree at 2× ^10-2 Pa～5×10 ^-2 Pa; Turn on the ion source, set the working voltage to 3.0kV~4.0kV, and clean the PTFE workpiece with ion beam for 30min~50min;

3) Turn off the ion source and gas supply system, turn on the Cr or NiCr arc source, set the working current of the Cr or NiCr arc source to 60-80A, and plate the Cr or NiCr transition layer for 10min-30min;

4) Turn off the Cr or NiCr arc source; apply a pulse bias of -80V to -200V on the PTFE workpiece, the pulse bias frequency is 1kHz to 10kHz, and the pulse bias duty cycle is 10% to 20%; open Al, Cu or Au arc source, set the discharge current of Al, Cu or Au arc source to 60-80A, plate Al, Cu or Au conductive film for 120min-200min.

Beneficial effect

The metal conductive film coated on the surface of polytetrafluoroethylene in the invention has the advantages of dense film, firm adhesion, uniform and controllable thickness, can realize complex curved surface workpiece coating, etc., and reaches the engineering application level.

Detailed ways

Example 1

The method of plating conductive film on the surface of polytetrafluoroethylene by arc ion plating technology, using arc ion plating technology, adopting the method of heating the workpiece, ion beam cleaning and plating transition layer in turn, plating conductive film on the surface of polytetrafluoroethylene, its specific The steps are:

1) Put the polytetrafluoroethylene workpiece into the vacuum chamber, then evacuate, the vacuum degree is ≤5×10 ^-3 Pa, keep the time for 2h, and then heat the polytetrafluoroethylene workpiece to 120°C;

2) Open the gas supply system, introduce the mixed gas of Ar and _O2 into the vacuum chamber in step 1), the volume ratio of Ar and _O2 is 1:1, and keep the vacuum degree at 3 × 10 ^-2 Pa; open the ion source , set the working voltage to 4.0kV, and clean the PTFE workpiece with ion beam for 30 minutes;

3) Turn off the ion source and gas supply system, turn on the Cr arc source, set the working current of the Cr arc source to 60A, and plate the Cr transition layer for 20 minutes;

4) Close the Cr arc source; add a pulse bias of -150V on the polytetrafluoroethylene workpiece, the pulse bias frequency is 5kHz, and the pulse bias duty cycle is 10%; open the Al arc source, set the Al arc source The discharge current is 70A, the Al conductive film is plated for 120min, and the thickness of the final prepared aluminum conductive film is 5 μm.

Example 2

The method of plating conductive film on the surface of polytetrafluoroethylene by arc ion plating technology, using arc ion plating technology, adopting the method of heating the workpiece, ion beam cleaning and plating transition layer in turn, plating conductive film on the surface of polytetrafluoroethylene, its specific The steps are:

1) Put the polytetrafluoroethylene workpiece into the vacuum chamber, then evacuate, the vacuum degree is ≤5×10 ^-3 Pa, keep the time for 3h, and then heat the polytetrafluoroethylene workpiece to 150°C;

2) Open the gas supply system, introduce the mixed gas of Ar and _O2 into the vacuum chamber in step 1), the volume ratio of Ar and _O2 is 1:1, and keep the vacuum at 5 × 10 ^-2 Pa; open the ion source , set the working voltage to 3.0kV, and perform ion beam cleaning on the PTFE workpiece for 40minn;

3) Turn off the ion source and gas supply system, turn on the NiCr arc source, set the operating current of the NiCr arc source to 80A, and plate the NiCr transition layer for 10 minutes;

4) Turn off the NiCr arc source; add a pulse bias of -100V on the polytetrafluoroethylene workpiece, the pulse bias frequency is 2kHz, and the pulse bias duty cycle is 20%; turn on the Cu arc source, set the Cu arc source The discharge current is 80A, the Cu conductive film is plated for 150min, and the thickness of the copper conductive film prepared finally is 4 μm.

Example 3

The method of plating conductive film on the surface of polytetrafluoroethylene by arc ion plating technology, using arc ion plating technology, adopting the method of heating the workpiece, ion beam cleaning and plating transition layer in turn, plating conductive film on the surface of polytetrafluoroethylene, its specific The steps are:

1) Put the polytetrafluoroethylene workpiece into the vacuum chamber, then evacuate, the vacuum degree is ≤5×10 ^-3 Pa, keep the time for 2h, and then heat the polytetrafluoroethylene workpiece to 130°C;

2) Open the gas supply system, introduce the mixed gas of Ar and _O2 into the vacuum chamber in step 1), the volume ratio of Ar and _O2 is 1:1, and keep the vacuum at 4 × 10 ^-2 Pa; open the ion source , set the working voltage to 3.5kV, and perform ion beam cleaning on the PTFE workpiece for 30 minutes;

3) Turn off the ion source and gas supply system, turn on the NiCr arc source, set the working current of the NiCr arc source to 70A, and plate the NiCr transition layer for 25 minutes;

4) Turn off the NiCr arc source; add a pulse bias of -110V on the polytetrafluoroethylene workpiece, the pulse bias frequency is 3kHz, and the pulse bias duty cycle is 15%; open the Au arc source, set the Au arc source The discharge current was 75A, the Au conductive film was plated for 200min, and the thickness of the final prepared gold conductive film was 4 μm.

Claims (1)

1. adopt arc ion plating technology to plate the method for conductive film on polytetrafluoroethylene surface, it is characterized in that: utilize arc ion plating technology, adopt the method for heating workpiece, ion beam cleaning and plating transition layer successively, on polytetrafluoroethylene surface Plating conductive film, its specific steps are: 1) Put the polytetrafluoroethylene workpiece into the vacuum chamber, then evacuate, the vacuum degree is ≤5×10 ^-3 Pa, keep it for not less than 2h, and then heat the polytetrafluoroethylene workpiece to 100-150°C; 2) Open the gas supply system, introduce the mixed gas of Ar and _O2 into the vacuum chamber in step 1), the volume ratio of Ar and _O2 is 1:1, and keep the vacuum degree at 2× ^10-2 Pa～5×10 ^-2 Pa; Turn on the ion source, set the working voltage to 3.0kV~4.0kV, and clean the PTFE workpiece with ion beam for 30min~50min; 3) Turn off the ion source and gas supply system, turn on the Cr or NiCr arc source, set the working current of the Cr or NiCr arc source to 60-80A, and plate the Cr or NiCr transition layer for 10min-30min; 4) Turn off the Cr or NiCr arc source; apply a pulse bias of -80V to -200V on the PTFE workpiece, the frequency of the pulse bias is 1kHz to 10kHz, and the duty cycle of the pulse bias is 10% to 20%; open Al, Cu or Au arc source, set the discharge current of Al, Cu or Au arc source to 60-80A, plate Al, Cu or Au conductive film for 120min-200min.