CN101933130B - Defect inspection device and defect inspection method for silicon wafer - Google Patents
Defect inspection device and defect inspection method for silicon wafer Download PDFInfo
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- CN101933130B CN101933130B CN2008801007852A CN200880100785A CN101933130B CN 101933130 B CN101933130 B CN 101933130B CN 2008801007852 A CN2008801007852 A CN 2008801007852A CN 200880100785 A CN200880100785 A CN 200880100785A CN 101933130 B CN101933130 B CN 101933130B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 32
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 230000007547 defect Effects 0.000 title abstract description 8
- 238000007689 inspection Methods 0.000 title description 14
- 238000000034 method Methods 0.000 title description 11
- 230000035945 sensitivity Effects 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 26
- 230000002950 deficient Effects 0.000 claims description 25
- 238000005286 illumination Methods 0.000 claims description 24
- 238000005259 measurement Methods 0.000 claims description 21
- 230000001105 regulatory effect Effects 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 115
- 208000037656 Respiratory Sounds Diseases 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
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- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 231100000241 scar Toxicity 0.000 description 1
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/8901—Optical details; Scanning details
- G01N21/8903—Optical details; Scanning details using a multiple detector array
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
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Abstract
An apparatus for inspecting defects of a silicon wafer is provided with an infrared light illuminating apparatus for illuminating the silicon wafer by adjusting a light quantity corresponding to a specific resistivity of the silicon wafer, and an imaging section, which is composed of a line sensor array having sensitivity to infrared light and images the silicon wafer.
Description
Technical field
The present invention relates to the defect inspection of Silicon Wafer, particularly relate to the defect inspection that detects the defective that is present in surface or inside by transillumination.
Background technology
In the checking process of Silicon Wafer that the semiconductor manufacturing is adopted (below be called " wafer "), be used to check that the surface inspection of the defective of crystal column surface is very important, be zero in order to make fraction defective, need carefulness attentively to check.On the other hand, not too consider the defective of wafer inside in the past.
When making wafer, the defective (crackle, pin hole or bubble) that is present in the tens μ m～hundreds of μ m in the silicon ingot (ingot) can remain in the surperficial or inner of wafer with keeping intact when being cut.Occur on the surface under the situation of these defectives, can utilize the surface to detect, but under the inner residual situation that these defectives are arranged of wafer, the flaw detection apparatus that can't utilize surface inspection to use detects with flaw detection apparatus.
Owing to such defectives such as the crackle that is present in wafer inside, pin hole or bubble, might influence the performance of semiconductor device, seek a kind of transmission inspection that can check out the defective of wafer inside.
Usually, the transmission inspection of wafer adopts infrared illumination to carry out.When projecting the infrared light more than the wavelength 1100nm on the wafer, this transmittance wafer can utilize this transmitted light inspection to be present in the defective of wafer inside.
But, be low resistance wafer below the 1 Ω cm for the value of resistivity, the amount of the infrared light of transmission can change according to the value of resistivity.Therefore, in order to obtain to take required transmitted light, need consider that the resistivity ground of low resistance wafer constitutes the infrared illumination parts, thereby guarantee the amount of required transmitted light.
On the other hand, as the shoot part of the defective that is used to check wafer inside, the known device that the defective of using face sensor camera inspection wafer inside is arranged.In this device, for the face sensor camera, the coverage that will obtain the such face sensor camera of sufficient resolution is as unit area.And, the zone of wafer internal flaw is cut apart at each this unit area, obtain a plurality of photographic images by this camera site is moved successively, thereby check the defective of whole wafer.
But, under the situation of using face sensor to take, be difficult in whole unit area, implement illumination uniformly.In the central part and the outer end of shooting area, in photographic images, produce inhomogeneously, be difficult to take correct image.In addition, check owing to be divided into a plurality of the shooting regionally, therefore, existing problems aspect precision and reproducibility.And, check that owing to taking therefore, the review time is elongated with being divided into the zonule, can't tackle the high speed of checking operation.
Summary of the invention
Adopt a mode of the present invention, a kind of flaw detection apparatus of Silicon Wafer is provided, it comprises: the infrared illumination parts, and its value according to the resistivity of above-mentioned Silicon Wafer is regulated light quantity, and above-mentioned Silicon Wafer is used to throw light on; Shoot part, it is made of the line sensor array that infrared light is had sensitivity, is used to take above-mentioned Silicon Wafer.
In addition, adopt another way of the present invention, a kind of defect detecting method of Silicon Wafer is provided, the light quantity of regulating the infrared illumination parts according to the value of the resistivity of above-mentioned Silicon Wafer, utilize the above-mentioned infrared illumination parts above-mentioned Silicon Wafer that throws light on, utilize the shoot part that constitutes by the line sensor array that infrared light is had sensitivity to take above-mentioned Silicon Wafer.
Description of drawings
Fig. 1 is the front view of the flaw detection apparatus of embodiments of the present invention.
Fig. 2 is the vertical view of flaw detection apparatus.
Fig. 3 is the end view of flaw detection apparatus.
Fig. 4 is the cutaway view of wafer mounting table.
Fig. 5 A, 5B are the figure that is used to illustrate the shooting area of each shoot part.
Fig. 6 is the figure that is used to illustrate the structure of resistivity measurement portion.
Fig. 7 is the figure that is used to illustrate the structure of transmission light quantity measurement section.
Fig. 8 is the chart of the relation of expression resistivity and image brightness.
Embodiment
Below, the execution mode that present invention will be described in detail with reference to the accompanying, advantage of the present invention.
Describe embodiments of the present invention with reference to the accompanying drawings in detail.In addition, technical scope of the present invention is not limited to the concrete structure of execution mode.
Fig. 1～Fig. 3 is front view, vertical view and the end view of the flaw detection apparatus 1 of embodiments of the present invention.Flaw detection apparatus 1 comprises shoot part 2, is used to shine the line style photoconduction exit portal of continuous belt ir light (corresponding " infrared illumination parts " below are called " illuminace component ") 3, wafer mounting table 4 and image processing part 12.As shown in Figure 4, wafer 9 is flatly remained on the wafer mounting table 4.
The line sensor array is arranged pixel with linearity, has scan function.Check that in order to utilize the line sensor array to obtain the image of two dimension, need to make object moves along the direction with scanning direction (arranging the direction of the pixel) quadrature of line sensor array.In Fig. 1, because being equipped on the scanning direction of the line sensor array on the shoot part 2 is the direction parallel with paper, therefore, move along the direction (arrow A direction in Fig. 2) vertical as long as utilize rectilinear motion objective table 5 to make, just can utilize the line sensor array to obtain two dimensional image with paper as the wafer 9 of checking object.
Because the scope that can utilize the line sensor array to take is restricted, and therefore, in order to take the image of the scope that exceeds this scope, shooting area is divided into a plurality of zones.And configuration is used to take each regional shoot part 2, and the line sensor array that utilizes each shoot part 2 to be had is taken each zone.In the present embodiment, shown in Fig. 5 A, 5B, shooting area is divided into two zones (right zone and zone, a left side), in each shooting area, disposes shoot part 2 respectively, thereby can obtain whole photographic images of wafer 9.
As the optical system of shoot part 2, can adopt telecentric optical system.When adopting telecentric optical system, even the distance between reference object and the optical system changes, captured size of images can not become yet, and therefore, can correctly grasp the position and the size of defective.
Because therefore visible light transmissive wafer 9 not, adopts the common illumination of visible light can't carry out viewed in transmittance, but so long as greater than the wavelength (infrared light) of 1100nm, just can transmission wafer 9 and carry out viewed in transmittance.Therefore, as light source 7, adopt the infrared light light source that mainly sends greater than the wavelength of 1100nm.
Fig. 8 is the brightness (below be called " image brightness ") when taking infrared light after wafer 9 is crossed in transmission with respect to the value representation of the resistivity of wafer 9, is illustrated in the image brightness of the wafer 9 when having changed the illumination light quantity that irradiates from illuminace component 3 (below be called " light quantity ").In Fig. 8, be 90～130 o'clock in the value of the image brightness of wafer 9, can suitably take the inside of wafer 9, therefore, regulate the light quantity of illuminace component 3, so that the image brightness of wafer 9 is this scope.
The illuminace component 3 of present embodiment can automatically be set light quantity with respect to the resistivity of wafer 9, makes wafer 9 be the image brightness of suitable shooting, according to the resistivity of wafer 9 illuminace component 3 is set at suitable light quantity.
As Fig. 1～shown in Figure 3, wafer mounting table 4 forms can utilize rectilinear motion objective table 5 and guide rail 6 to move along the arrow A direction.The track that rectilinear motion objective table 5 is crossed by Precision Machining and with the line slideway bearing guiding of this track combination, and have the drive division that can critically locate, wafer mounting table 4 is moved with constant speed.Guide rail 6 is made of sliding shaft sleeve 61 and sliding axle 62.The load of guide rail 6 supporting wafer mounting tables 4, and wafer mounting table 4 is moved smoothly.That is, the travel mechanism of the wafer 9 of present embodiment is made of wafer mounting table 4, rectilinear motion objective table 5 and guide rail 6.
Present embodiment is the structure that wafer 9 is moved with respect to shoot part 2 and illuminace component 3, but be not limited to this structure, for example also shoot part 2 and illuminace component 3 can be constituted and can move with respect to wafer 9, by make illuminace component by mounting on the wafer mounting table 4 of having fixed wafer 9 and the mechanism of taking wafer 9, scan whole wafer 9.
The structure of the resistivity measurement portion 10 of that Fig. 6 uses when being illustrated in the light quantity of regulating illuminace component 3, as to be used to measure wafer 9 resistivity.Utilize the resistivity of measuring probe 10a at the surface measurement wafer 9 of wafer 9.Regulate the light quantity of illuminace component 3 by the intensity of regulating light source 7 according to this measured value, thereby make the light quantity of transmission wafer 9 become the light quantity of the defective of the most suitable shooting wafer 9.
In the present embodiment, the sensitivity of shoot part 2 can be regulated according to the value of the resistivity of wafer 9.For example, can not obtain only regulating illuminace component 3 to realize suitably photographic images by the sensitivity of adjusting shoot part 2 under the situation of the required transmission light quantity of enough suitably photographic images.That is, use the value of the resistivity of measuring by resistivity measurement portion 10 to regulate the light quantity of illuminace component 3 and the sensitivity of shoot part 2 simultaneously, thereby can obtain the image brightness of the suitable shooting defective of wafer 9.
The function and the operation of checking of the flaw detection apparatus 1 of present embodiment then, are described.
Utilize not shown conveying device to carry wafer 9, wafer 9 is transferred on the wafer mounting table 4.It is not to utilize grasping device etc. to catch the structure of wafer 9 that the wafer of present embodiment keeps structure, but utilizes the tapered portion at the edge that is arranged at wafer 9 or can not influence the structure of edge portion supporting wafer 9 of the scope of defect inspection.
Utilize resistivity measurement portion 10 shown in Figure 6 to measure the value of the resistivity of wafer 9.Can with wafer 9 mountings under the state on the wafer mounting table 4, resistivity measurement portion 10 is measured near wafer 9, also can with wafer 9 mountings before on the wafer mounting table 4 with wafer 9 mountings on other mounting table with resistivity measurement portion 10, measure the resistivity of wafer 9.
Thereby change the light quantity that the intensity of light source 7 is regulated illuminace component 3 according to the value of the resistivity of the wafer of measuring by resistivity measurement portion 10 9.Regulate the illumination light of illuminace component 3, make that the transmission light quantity of transmission wafer 9 is the amount that enough shoot parts 2 are taken.
Utilize rectilinear motion objective table 5 to make wafer 9 along constant direction, move, utilize two shoot parts 2 to take the image that the transmitted light by wafer 9 produces with constant speed.Because the capturing element that is equipped on the shoot part 2 is a line sensor array of arranging pixel with wire, therefore, wafer 9 is moved along sub scanning direction (the arrow A direction among Fig. 2), scan repeatedly on one side, thereby obtain two-dimentional image.
There is restriction in the scope that the line sensor array of shoot part 2 can be taken.Therefore, for diameter the wafer of 300mm for example, shown in Fig. 5 A, 5B, be divided into two coverages, utilize each self-corresponding shoot part 2 to take.
Illumination light transmission wafer 9 from the illuminace component 3 of the light quantity that is adjusted to the most suitable shooting sends arrives the line sensor array that is arranged on the shoot part 2.As long as have crackle or bubble in the surface or the inside of wafer 9, it is deep or light poor that transmitted light will produce in the photographic images of on-line sensor array in this position refraction.Under the surface of wafer 9 or the inner situation that has a crackle, can obtain the image of wire, under the surface of wafer 9 or the inner situation that has a bubble, can obtain round shape or circular image.Image processing part 12 is distinguished defective according to their shape and the information of concentration.
The method of regulating the light quantity of illuminace component 3 is not limited to the method adjusted according to the value of the resistivity of being measured by above-mentioned resistivity measurement portion 10.In preceding operation, under the situation of measured resistivity, also can this Value Dataization be stored, according to the light quantity of this value adjusting illuminace component 3 at each wafer.The value of resistivity that for example will be transported to the wafer 9 of flaw detection apparatus 1 is stored in the not shown storage device in advance, after being transferred to flaw detection apparatus 1, from storage device, takes out wafer 9 value of this wafer 9, according to the output of this value adjusting light source 7, the light quantity of illuminace component 3 is adjusted to the light quantity of defective transmission wafer 9, the most suitable shooting wafer 9.
In the method, resistivity measurement portion 10 needn't be set in flaw detection apparatus 1.Also has such advantage: when shifting wafer 9, can be already be the light quantity of the most suitable shooting in advance with the light quantity setting of illuminace component 3, thereby can shorten the required time of inspection.
In addition, can regulate the sensitivity of shoot part 2 according to the value of the resistivity of wafer 9, regulate the light quantity of illuminace component 3 and the sensitivity of shoot part 2 simultaneously by the value of using the resistivity of measuring in advance, can obtain suitable more image brightness of taking the wafer 9 of defective.
And Fig. 7 represents to be provided with the example of transmission light quantity measurement section 11, and this transmission light quantity measurement section 11 is used to measure the amount of the transmitted light of transmission wafer 9 when being thrown light on by illuminace component 3 portions such as infrared illumination such as grade.Have confidential relation by the transmission light quantity of transmission light quantity measurement section 11 measurements and the image brightness of wafer 9, transmission light quantity is big more, and the image brightness of wafer 9 is high more, and transmission light quantity is littler, and the image brightness of wafer 9 is low more.Thus, the light quantity that also can use the value of the light quantity of transmission wafer 9 to regulate illuminace component 3.Infrared illumination parts as use this moment can adopt illuminace component 3, but be not limited to this structure, also can be provided for measuring the illuminace component of the special use of transmission light quantity.
In addition, can regulate the sensitivity of shoot part 2 according to the value of the resistivity of wafer 9, the value of the transmission light quantity by using wafer 9 is regulated the light quantity of illuminace component 3 and the sensitivity of shoot part 2 simultaneously, can obtain the image brightness that is fit to take defective more of wafer 9.
In addition, method as the light quantity of regulating illuminace component 3, to the method for the measured value of the resistivity measurement portion 10 that utilizes special setting, use the value of the resistivity of measuring in advance method, utilize the method for infrared optical transmission amount to be illustrated, but be not limited thereto.
In the present embodiment, cover whole of wafers 9 by two shoot parts 2, but the quantity of shoot part 2 is not limited thereto.Many shoot parts 2 are configured to row and improve resolution, can obtain meticulousr check image.
As above explanation, the flaw detection apparatus 1 of embodiments of the present invention will be by having the line sensor array of sensitivity as capturing element to infrared light, can under identical inspection condition, check whole wafer 9, and also can tackle the high speed of checking operation.In addition, the value of the resistivity by obtaining wafer 9, with the light quantity setting of illuminace component 3 for and the corresponding value of the value of the resistivity of obtaining, can obtain the illumination of the most suitable shooting defective.As a result, the large diameter low resistance wafer that can have difficulties to transmission inspection in the past evenly and is at high speed checked defective at its whole.
The Japanese Patent Application 2008-192829 that the application submitted to the Japan special permission Room based on June 27th, 2008 advocates priority, by enrolling in this specification with reference to the full content with Japanese Patent Application 2008-192829.
Claims (6)
1. the flaw detection apparatus of a Silicon Wafer, it comprises:
The infrared illumination parts, it is provided with mutually with the surface of above-mentioned Silicon Wafer with standing facing each other,
Shoot part, it comprises that the infrared light to above-mentioned infrared illumination parts has the line sensor array of sensitivity,
Image processing part, its image detection according to above-mentioned shoot part are present in the surface or the inner defective of above-mentioned Silicon Wafer,
Described flaw detection apparatus obtains the value of the resistivity of above-mentioned Silicon Wafer in advance by resistivity measurement portion,
Above-mentioned infrared illumination parts are regulated light quantity according to the value of the resistivity of the above-mentioned Silicon Wafer of above-mentioned acquisition, and,
Above-mentioned shoot part is regulated sensitivity for infrared light according to the value of the resistivity of the above-mentioned Silicon Wafer of above-mentioned acquisition.
2. flaw detection apparatus according to claim 1, wherein,
This flaw detection apparatus comprises the resistivity measurement portion of the value of the resistivity that is used to measure above-mentioned Silicon Wafer.
3. flaw detection apparatus according to claim 1, wherein,
Can not obtain to adjust of the sensitivity of above-mentioned shoot part under the situation of the required transmission light quantity of enough suitably photographic images only regulating above-mentioned infrared illumination parts for infrared light.
4. the flaw detection apparatus of a Silicon Wafer, it comprises:
The infrared illumination parts, it is provided with mutually with the surface of above-mentioned Silicon Wafer with standing facing each other,
Shoot part, it comprises that the infrared light to above-mentioned infrared illumination parts has the line sensor array of sensitivity,
The transmission light quantity measurement section, it is used for measuring in advance the value of the infrared optical transmission amount of the above-mentioned Silicon Wafer of transmission,
Image processing part, its image detection according to above-mentioned shoot part are present in the surface or the inner defective of above-mentioned Silicon Wafer,
The value of resistivity that is transported to the Silicon Wafer of described flaw detection apparatus is stored in the storage device in advance,
Above-mentioned infrared illumination parts are regulated light quantity according to the value of the resistivity of the above-mentioned Silicon Wafer of above-mentioned acquisition, and,
Above-mentioned shoot part is regulated sensitivity for infrared light according to the value of the infrared optical transmission amount of the above-mentioned Silicon Wafer of transmission of above-mentioned measurement.
5. flaw detection apparatus according to claim 4, wherein,
This flaw detection apparatus also comprises the resistivity measurement portion of the value of the resistivity that is used to measure above-mentioned Silicon Wafer.
6. flaw detection apparatus according to claim 4, wherein,
Can not obtain to adjust of the sensitivity of above-mentioned shoot part under the situation of the required transmission light quantity of enough suitably photographic images only regulating above-mentioned infrared illumination parts for infrared light.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008192829A JP4358889B1 (en) | 2008-06-27 | 2008-06-27 | Wafer defect inspection equipment |
| JP2008-192829 | 2008-06-27 | ||
| PCT/JP2008/072725 WO2009157105A1 (en) | 2008-06-27 | 2008-12-09 | Apparatus for inspecting silicon wafer defect and method for inspecting silicon wafer defect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101933130A CN101933130A (en) | 2010-12-29 |
| CN101933130B true CN101933130B (en) | 2013-07-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801007852A Expired - Fee Related CN101933130B (en) | 2008-06-27 | 2008-12-09 | Defect inspection device and defect inspection method for silicon wafer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8654191B2 (en) |
| JP (1) | JP4358889B1 (en) |
| KR (1) | KR101296015B1 (en) |
| CN (1) | CN101933130B (en) |
| WO (1) | WO2009157105A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2760377C (en) * | 2009-04-30 | 2016-02-23 | Wilcox Associates Inc. | An inspection method and an inspection apparatus |
| JP5556346B2 (en) * | 2010-05-11 | 2014-07-23 | 株式会社Ｓｕｍｃｏ | Wafer defect inspection apparatus and wafer defect inspection method |
| KR101214806B1 (en) | 2010-05-11 | 2012-12-24 | 가부시키가이샤 사무코 | Apparatus and method for defect inspection of wafer |
| US10460998B2 (en) * | 2010-11-09 | 2019-10-29 | Nikon Corporation | Method for inspecting substrate, substrate inspection apparatus, exposure system, and method for producing semiconductor device |
| JP6004517B2 (en) * | 2011-04-19 | 2016-10-12 | 芝浦メカトロニクス株式会社 | Substrate inspection apparatus, substrate inspection method, and adjustment method of the substrate inspection apparatus |
| EP2600323A3 (en) * | 2011-11-30 | 2013-12-25 | AIT Austrian Institute of Technology GmbH | Method and a device for recording a digital image with accurate colours |
| CN102569119A (en) * | 2011-12-19 | 2012-07-11 | 立晔科技股份有限公司 | Chip or wafer inspection device |
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| US20100165095A1 (en) | 2010-07-01 |
| JP4358889B1 (en) | 2009-11-04 |
| KR101296015B1 (en) | 2013-08-12 |
| JP2010008392A (en) | 2010-01-14 |
| WO2009157105A1 (en) | 2009-12-30 |
| US8654191B2 (en) | 2014-02-18 |
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