CN101923863B - Method and apparatus for controlled front shield thickness for perpendicular writer - Google Patents
Method and apparatus for controlled front shield thickness for perpendicular writer Download PDFInfo
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- CN101923863B CN101923863B CN 201010239754 CN201010239754A CN101923863B CN 101923863 B CN101923863 B CN 101923863B CN 201010239754 CN201010239754 CN 201010239754 CN 201010239754 A CN201010239754 A CN 201010239754A CN 101923863 B CN101923863 B CN 101923863B
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- front shielding
- etching
- transducing head
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
- G11B5/3169—Working or finishing the interfacing surface of heads, e.g. lapping of heads
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
A method for forming a transducing head having a magnetic writer includes forming a pedestal adjacent to a writer pole and a gap layer, depositing a front shield on the pedestal, etching the front shield, and depositing a backfill layer upon the front shield after etching. The front shield has a controlled thickness upon etching.
Description
Background technology
Hard disk drive (HDD) typically comprises one or more magnetic media disks or other magnetic storage mediums, and wherein each has the concentric data magnetic track for the storage data.When using a plurality of dish, form stacking by the coaxial disks with basic identical diameter.The transducing head that is carried by slide block is used for read-write to the data track on price fixing.Described slide block is carried by head arm assembly (HAA), and this head arm assembly comprises actuator arm and suspention assembly, and this slide block can comprise load beam and universal joint.This universal joint can be to be fixed to the independent hardware of load beam to support the slide block on it, perhaps can integrally form with load beam.Operating period, when the disc spins that is associated, slide block slides on the little air cushion of panel surface.Actuator arm has hinge, so that with respect to coiling positioning sliding block movably.Can comprise micro-actuator component, so that the additional accurately location of suspention assembly and slide block to be provided.Electrical connection is extended along suspention, transducing head is electrically connected near the assembly that is positioned on actuator arm or it.These electrical connections can be formed at it suspention originally, maybe can be positioned on the independent interconnect structure of relative suspention supporting for example folding (flex-on) suspention (FOS).
Magnetic storage medium can be stored as bit with data, and direction of magnetization is in media plane, perhaps perpendicular to media plane.Larger storage density can obtain by perpendicular recording usually.
Slide block comprises slide body and comprises the overcoat of transducing head.This overcoat is electrical isolation.A plurality of bond pads are formed on slide block, for example on the back edge or end face of slide block, are electrically connected to external circuit in order to the element of transducing head is passed overcoat.
Transducing head typically comprises write device and reader.Reader comprises the sensor for the magnetic coded message of retrieve stored on dish (or other magnetic storage mediums).Caused the rotation of magnetic vector of one or more sensing layers of sensor from the magnetic flux of panel surface, this so that cause the variation of sensor electrical attribute, this variation can detect by the voltage that makes electric current pass sensor and survey sensor two ends.The geometry that depends on sensor, sense current can pass in the plane of sensor layer (CIP) or perpendicular to the plane (CPP) of sensor layer.Then external circuit is converted to appropriate format with information of voltage, and processes by demand this information, with the coded message on the recovery dish.
The write device that is used for the perpendicular recording transducing head typically comprises main pole and returns to the utmost point, and they are separated from each other by clearance layer on the air cushion surface (ABS) of transducing head.Return to the utmost point and can comprise front shielding (or the rear shielding) part of extending along ABS.Front shielding can be used for providing improved magnetic field gradient to write device, in order to improve linear recording density.Main pole and return to the utmost point and can be connected to each other in the zone away from ABS by post gap closer or rear through hole.One or more layers conductive coil is placed on main pole and returns between the utmost point, and is sealed by electric insulation layer.Conductive coil can have different structures, for example spiral or pie-shaped structure.For to the dish (or other magnetic storage mediums) data writing, electric current is applied to conductive coil to generate magnetic field in the dish under the pole tip of main pole.Pass through the sense of current of coil by counter-rotating, the data polarity that is written to magnetic storage medium is inverted, and magnetic transition is written between two adjacent bit of magnetic storage medium.
The progress of magnetic recording head technology is mainly that the demand by the recording density that increases HDD drives.Along with the growth of recording density, the track width of the data track of magnetic storage medium is tending towards diminishing, and that is to say, track pitch has increased.The performance of modern vertical magnetic recording head is relevant to the magnetic write field that can be provided for writing perpendicular media, and it is tending towards reducing when track pitch is relatively high.The arrangement of components of transducing head can affect performance with respect to the write field that can generate.For example, relatively high track pitch is tending towards limiting the size of write device pole tip, pole tip width particularly, and reduce between main pole and front shielding the clearance layer size of (and main pole and return between the utmost point).All of these factors taken together is tending towards weakening the performance of write device.The existence of front shielding also is tending towards weakening the performance of write device aspect the size of write device available magnetic field.
Summary of the invention
A kind of according to the method that is used to form the transducing head with magnetic writer of the present invention, comprising: form the base adjacent with clearance layer with the write device utmost point, shielding before deposition on base, shielding before etching, and deposit backfill layer in the front shielding after etching.Described front shielding has controlled thickness when etching.
Description of drawings
Fig. 1-3 are the viewgraph of cross-section of a part during the various fabrication phases according to transducing head of the present invention.
Fig. 4 is the viewgraph of cross-section of the embodiment of this part after manufacturing is completed of the transducing head in Fig. 1-3.
Fig. 5 is the viewgraph of cross-section of the embodiment of this part after manufacturing of the transducing head in Fig. 1-3.
Fig. 6 is the viewgraph of cross-section of a part during the various fabrication phases of the embodiment of transducing head.
Fig. 7 is the viewgraph of cross-section of the embodiment of this part after manufacturing is completed of the transducing head in Fig. 6.
Fig. 8 is the process flow diagram according to the manufacture method of transducing head of the present invention.
Fig. 9 is the process flow diagram of embodiment of the manufacture method of transducing head.
Embodiment
Generally speaking, the invention provides a kind of method and apparatus of controlled thickness of front shielding (or rear shielding) of magnetic writer of the transducing head for hard disk drive (HDD).The thickness of front shielding (having the thickness that generally limits along throat's short transverse) is highly significant limiting throat, and is an important parameter at definite magnetic writer aspect of performance.In the prior art, the thickness of front shielding limits during the process of lapping on the air cushion surface (ABS) that forms transducing head.Yet grinding operation often has some variablees, and this may cause the variation of front shield thickness.Depend on desired front shield thickness, be used for the equipment that grinds and be used for controlling the technology of grinding, the variation of grinding can represent a signal portion of the gross thickness of front shielding.Grinding the conspicuousness that changes increases along with larger area recording density.Grinding during manufacturing changes the performance change between the transducing head that also can introduce same design.Therefore, the control of throat's height is for the write device performance, and particularly the performance of the write device of relatively high track pitch is extremely important.The invention provides a kind of before grinding operation and be independent of the method that grinding operation limits front shield thickness.To better understand details of the present invention and progress of the present invention and advantage by checking following description.
Slide block typically forms by such process, and this process comprises processes the wafer that comprises a plurality of slide blocks of being separated into after a while single slide block/transducing head assembly, forms separately slide block although do not use wafer and remains possible.Before single slide block separated, the processing of wafer was commonly referred to as the wafer scale manufacturing.The wafer scale manufacturing can be included in removal and other treatment steps of selectivity deposition, patterning and the material of each layer on slide body.In many cases, can be simultaneously all slide blocks of wafer/transducing head assembly be carried out treatment step.Fig. 1-3 are the viewgraph of cross-section of a part during each stage that wafer scale is made according to transducing head 40 of the present invention.Although not shown in Fig. 1-3, slide body can be positioned at the bottom towards part shown in transducing head 40.In addition, should be noted that, transducing head 40 can comprise other structures, the reader assembly that does not for example illustrate for simplification in figure.
Fig. 1 is the viewgraph of cross-section of the part of the write device of transducing head 40 during wafer scale is made.This transducing head 40 comprises the main write device utmost point 42, yoke layer 44, clearance layer 46, base 48 and backfill 50.Yoke layer 44 and the main write device utmost point 42 are made by magnetic flux conductive material, and are arranged to contact with each other.The main write device utmost point 42 and yoke 44 can have suitable structure arbitrarily, and can use conventional method to form.Although not shown, one of ordinary skill in the art will appreciate that, coil is magnetically coupled to the main write device utmost point 42, in order to generate magnetic field at main write device in extremely, is used for carrying out in a well-known manner write operation.Backfill 50 can be used for filling and is positioned at the zone adjacent with the write device assembly of transducing head 40, and can be the material of electrical isolation.Usually, backfill 50 is used for being filled in the space that manufacture process stays due to the removal of patterning and other structure divisions.As shown in the embodiment of Fig. 1, backfill 50 positions are simultaneously adjacent with yoke 44 with the main write device utmost point 42.
At deposition clearance layer 46 and base 48 and after limiting edge 52, can with shielding material 56 before surface 54 deposited adjacent of the edge 52 of base 48 and clearance layer 46.Front shielding material 56 can be magnetic flux conductive material, typically is the ferromagnetic material such as NiFe.In the embodiment shown, front shielding material 56 can use ion beam depositing (IBD), plasma gas phase deposition (PVD), ald (ALD) or other suitable conformal deposition techniques to deposit.
As shown in Figure 1, front shielding material 56 defines the front shielding 56A of first, front shielding second portion 56B and front shielding third part 56C.The front shielding 56A of first has thickness T
2Front shielding second portion 56B extends along the surface 54 of clearance layer 46 and has a thickness T
3Front shielding third part 56C extends along base 48 parts, and can have the thickness T almost identical with front shielding second portion 56B
3
Fig. 2 is during wafer scale is made, the viewgraph of cross-section of this part of the write device of transducing head 40 in the stage after the stage shown in Figure 1.Before deposition after shielding material 56, can etching before shielding material 56 so that the surface 58 of the shielding 56A of first before limiting, and regulate thickness T
2And T
3Etching can change thickness T
2And T
3Ratio, and can remove the selecteed part of front shielding material 56 fully.It should be noted, etching can optionally be carried out by such mode: the thickness T of the shielding 56A of first before increasing
2, but deposit again the material of removing from shielding second portion 56B.Before being used for removing, the etching technique of the part of shielding material 56 can comprise ion grinding, reactive ion etching, reactive ion beam etching and other suitable etch processs.Etching process can be carried out by angle [alpha] (seeing Fig. 1), is basically parallel to the edge 52 of base 48, in order to form the surface 58 of the front shielding 56A of first that is basically parallel to edge 52.After etching, surface 58 is the plane substantially, and is arranged to the edge 52 that is basically parallel to base 48.As shown in Figure 2, etching operation has been removed front shielding second portion 56B and front shielding third part 56C (second portion 56B and the third part 56C of the front shielding of removal are shown as imaginary line in Fig. 2) fully, has stayed the front shielding 56A of first of the front shielding construction that can represent complete transducing head 40.
The formation on surface 58 causes thickness T
2Peaked restriction.In the embodiment shown, the xsect of the 56A of first is rectangle substantially, and contact gap layer 46 surface 54.The part on the surface 54 of clearance layer 46 comes out by the removal of the part of the front shielding material 56 shown in the illusion line.When etching, thickness T
2Can be greater than about 10nm, for example within the scope of about 10-100nm, and about 50-100nm can be in one embodiment, and about 50nm can be in another embodiment.Thickness T
2Occurrence can change according to the needs of application-specific.
Fig. 3 is during wafer scale is made, the viewgraph of cross-section of this part of the write device of the transducing head 40 in the stage after the stage shown in Figure 2.As shown in Figure 3, with front surface 58 and the surperficial 54 deposited adjacent backfills 60 of clearance layer 46 that shield the 56A of first.Backfill 60 can be the nonferromagnetic material such as Ta, and can be the material identical or different with backfill 50.After deposition backfill 60, can carry out grinding operation, thereby limit the ABS of transducing head 40.
Fig. 4 is the embodiment of this part of transducing head 40 viewgraph of cross-section of---the namely stage wafer scale manufacturing after the stage shown in Figure 3 is completed or approached and completes---after grinding operation is completed.The part that transducing head 40 is polished the operation removal shows with the illusion line.Grind target 62 in the ABS of expectation position foundation.Grinding operation can use known technology and equipment to carry out in a conventional manner.As shown in Figure 4, grind in the position corresponding with grinding target 62 positions and limit ABS 64.Grind also the pole tip that limits the main write device utmost point 42 at ABS 64 places.In the embodiment shown, ABS 64 aligns and exposes this surface with the surface 58 of the front shielding 56A of first, and backfill 60 has been completely removed, but grinding operation does not change the thickness T of the front shielding 56A of first
2Grinding operation generally includes some deviations of leaving given grinding target.For example, in the situation that use conventional equipment and technology, abrasion error is all normal in approximately positive and negative 15nm (or less) scope.But, due to thickness T
2Maximal value limited before grinding operation, so abrasion error can't increase the thickness T of the transducing head 40 of completing
2, this will help the Performance Characteristics that provides more consistent.
Fig. 5 be the alternative embodiment of this part of transducing head 40 after grinding operation is completed, the viewgraph of cross-section when completing is completed or is approached in the namely stage wafer scale manufacturing after the stage shown in Figure 3.The part that transducing head 40 is polished the operation removal shows with the illusion line.As shown in Figure 5, replace to grind target 62 ' and be chosen as surface 58 T spaced apart with the front shielding 56A of first
4ABS 64 is limited to the position corresponding with grinding target 62 ' position.In the embodiment shown, the backfill 60A of first still keeps after grinding operation, only removes the part of backfill 60.The 60A of backfill first serves as spacer, and the front like this shielding 56A of first is recessed from ABS 64.
As noted above, grinding operation generally includes some deviations of leaving given grinding target, and abrasion error is all normal in approximately positive and negative 15nm scope.By will be apart from T
4Be chosen to be and equal at least given abrasion error (for example, greater than approximately 15nm), thickness T in grinding operation
2The risk that reduces just can be lowered or eliminate.If will be apart from T
3Greater than given abrasion error (for example be chosen to be, greater than about 15nm), the backfill 60A of first still keeps after grinding, and no matter any removal backfill 60 with respect to grinding the abrasion error of target 62 ' closer to the additional amount of the front shielding 56A of first.
The existence of the 60A of backfill first can provide some advantages.For example, because ABS 64 is subject to potential wearing and tearing (such as contacting between the magnetic storage medium due to oxidation, friction, slide block and rotation etc.) during use, so the material properties that can select the backfill 60A of first is to control the wearing character of transducing head 40.The 60A of backfill first is " near point ", that is to say, the write device of its expression transducing head 40 leaves the part of the corresponding medium disk of system (for example HDD) minor increment.Keep the time dependent relative constant thickness of the backfill 60A of first, thereby and the ability that before keeping, the shielding 56A of first leaves the relative constant distance of corresponding medium may be useful.In addition, the selection of the backfill 60A of first material properties can help control transducing head 40 near the heat engine tool ability of the main write device utmost point 42.This for example can help to control in 40 operating periods of transducing head the fade characteristics of the utmost point and shielding.
According to the present invention, the front shielding structure of numerous replacements can also be arranged.Fig. 6 is the viewgraph of cross-section of the part of another embodiment of transducing head 40 ' during making.Can be similar to transducing head shown in Figure 1 40 and construct transducing head 40 '.Yet the transducing head 40 ' fabrication phase afterwards can be different from transducing head 40.As shown in Figure 6, provided the front shielding 56A of first and front shielding second portion 56B, it can by suitably regulating etching process, be completed with at least a portion (or by omitting etching process fully) that stays whole front shielding second portion 56B.In the embodiment shown.The front shielding 56A of first and front shielding second portion 56B xsect separately are all rectangle substantially, and form " L " shape.The formation on surface 58 still can cause thickness limited T
2Maximal value.
Front shielding second portion 56B defining surface 68, it can be arranged to the surface 54 that is basically parallel to clearance layer 46.In the embodiment shown, front shielding second portion 56B is in abutting connection with the front shielding 56A of first, and the surface 54 of clearance layer 46 is covered by front shielding material 56.Thickness T
2Can be greater than about 10nm, for example within the scope of about 10-100nm, and about 50-100nm can be in one embodiment, and about 50nm can be in another embodiment.Front shielding second portion 56B can have the T of being substantially equal to
2Thickness T
3Although, thickness T
2And T
3The particular value of each can be according to the needs of application-specific independent variation.
With the surface 58 of the front shielding 56A of first and the surface 68 deposited adjacent backfills 60 of front shielding second portion 56B.Backfill 60 can be the nonferromagnetic material such as Ta, and can be the material identical or different with backfill 50.After deposition backfill 60, can carry out grinding operation, thereby limit the ABS of transducing head 40 '.
Fig. 7 be the embodiment of this part of the transducing head in Fig. 6 after grinding operation is completed, namely viewgraph of cross-section when completing is completed or approached to the stage after the stage shown in Figure 6 in manufacturing.The part that transducing head 40 ' is polished the operation removal shows with imaginary line.As shown in Figure 7, grind target 62 " be chosen as surface 58 T spaced apart with the front shielding 56A of first
5ABS 64 is limited to and grinds target 62 " corresponding position, position.Should be realized that, grind target 62 " the position can change according to the needs of application-specific.In the embodiment shown, backfill part 60C still keeps after grinding operation, only removes the part that shows with imaginary line in backfill 60.Thereby backfill part 60C serves as spacer, and the front like this shielding 56A of first is recessed from ABS 64.Yet front shielding second portion 56B extends to ABS 64, and is exposed to ABS 64.
As noted above, grinding operation generally includes some deviations of leaving given grinding target, and abrasion error is all normal in approximately positive and negative 15nm scope.By will be apart from T
5Be chosen to be and equal at least given abrasion error (namely greater than approximately 15nm), during grinding operation before the thickness T of the shielding 56A of first
2The risk that reduces just can be lowered or eliminate.If will be apart from T
5Greater than given abrasion error (for example be chosen to be, greater than about 15nm), backfill part 60C still keeps adjacent with the front shielding 56A of first after grinding, and no matter any removal backfill 60 with respect to grinding target 62 " closer to the front abrasion error that shields the additional amount of the 56A of first.Yet in this embodiment of transducing head 40 ', front shielding second portion 56B extends to ABS 64 usually, and no matter grind target 62 " the position or the abrasion error amount how.This structure can help to reduce by shielding the aberrations in property that decline causes before operating period, because front shielding second portion 56B always extends to ABS 64 usually.
Fig. 8 is the process flow diagram according to transducing head manufacture method of the present invention.At first, form yoke, the main write device utmost point and clearance layer (being respectively step 100,102 and 104).Step 100,102 and 104 can be undertaken by the required order of any particular application.Should be noted in the discussion above that these steps can carry out in a conventional way, and can comprise that any suitable deposition, patterning, material remove or other required techniques.At this, step 100,102 and 104 being discussed is only for the background of following method step is provided.Therefore, can omit step 100,102 and 104 in alternative embodiment, and can comprise the additional step of specifically not mentioning.
Secondly, form base (step 106).Described base can form on clearance layer.Should be understood that, in step 106, the formation of base can comprise any suitable deposition, patterning, material removal or other required techniques.The edge of shielding material before formed base usually provides and will deposit subsequently.
After forming base, adjacent with base, and usually also with the surperficial deposited adjacent of clearance layer before shielding material (step 108).This front shielding material for example can use, and ion beam depositing (IBD), plasma gas phase deposition (PVD), ald (ALD) or other suitable conformal deposition techniques deposit.Then etching should front shielding material (step 110).Step 110 is removed the part of front shielding material, and stays in position at least a portion of the front shielding material that deposits.The front shielding material that keeps can have the structure of any desired.The maximum ga(u)ge of shielding (along throat's short transverse) before etching process limits.The etching technique that is suitable for removing this part of front shielding material comprises ion grinding, reactive ion etching, reactive ion beam etching and other known etch processs.
After front shielding material is etched into required structure, with the front shielding material deposited adjacent backfill (step 112) that keeps.Then carry out grinding operation, to be defined for the ABS (step 114) of transducing head.Grinding can comprise the grinding target is set, and then carries out grinding operation, to remove material to grinding target.Due to the maximum ga(u)ge that defines before front shielding, so this thickness can not increase during grinding operation.In addition, if the grinding target is based upon the distance more than or equal to the abrasion error relevant to grinding operation, during grinding operation, the minimum thickness of front shielding can remain unchanged.In addition, be based upon distance greater than the abrasion error relevant to grinding operation if grind target, the part of backfill will be left the front shielding material that keeps and the spacer between ABS so.
Fig. 9 is the process flow diagram of the alternative embodiment of transducing head manufacture method.At first, form yoke, the main write device utmost point and clearance layer (being respectively step 200,202 and 204).Step 200,202 and 204 can be undertaken by the required order of any particular application.Should be noted in the discussion above that these steps can carry out in a conventional way, and can comprise that any suitable deposition, patterning, material remove or other required processes.At this, step 200,202 and 204 being discussed is only for the background of following method step is provided.Therefore, can omit step 200,202 and 204 in alternative embodiment, and can comprise the additional step of specifically not mentioning.
Secondly, form base (step 206).Described base can form on clearance layer.Should be understood that, in step 206, the formation of base can comprise any suitable deposition, patterning, material removal or other required techniques.The edge of shielding material before formed base usually provides and will deposit subsequently.
After forming base, adjacent with base, and usually also deposit front shielding material (step 208) with the surperficial adjacent of clearance layer with controlled thickness.In this embodiment, the maximum ga(u)ge of shielding before deposition process limits reduces or has removed needed subsequent material and removes step (being etching).
Front shielding material with the expectation formation of structure in place after, with front shielding material deposited adjacent backfill (step 210).Then carry out grinding operation, to be defined for the ABS (step 212) of transducing head.Grinding can comprise the grinding target is set, and then carries out grinding operation, to remove material to grinding target.Due to the maximum ga(u)ge that defines before front shielding, so this thickness can not increase during grinding operation.In addition, if the grinding target is based upon the distance more than or equal to the abrasion error relevant to grinding operation, during grinding operation, the minimum thickness of front shielding can remain unchanged.In addition, if the grinding target is based upon the distance greater than the abrasion error relevant to grinding operation, the part of backfill will be left the spacer between front shielding material and ABS so.
Although describe the present invention with reference to preferred embodiment, those skilled in the art will recognize that, can in the situation that do not deviate from spirit of the present invention and category, make change aspect form and details.For example, it is used that the additional structure of discussing especially and additional manufacture process also can be the present invention.
Claims (20)
1. method that is used to form the transducing head with magnetic writer, described method comprises:
Form the base adjacent with clearance layer;
Shielding before deposition on described base;
The described front shielding of etching, wherein said front shielding has controlled thickness when etching;
And
Deposit the backfill layer after etching in described front shielding, the first of wherein said front shielding is positioned between backfill layer and base.
2. the method for claim 1, is characterized in that, also comprises:
Grind described transducing head, surperficial to limit air cushion, wherein grind at least a portion that described transducing head is removed described backfill layer.
3. method as claimed in claim 2, is characterized in that, grinds described transducing head described front shielding is exposed to the air cushion surface.
4. method as claimed in claim 2, is characterized in that, limited the thickness of described front shielding before grinding, and remain unchanged during grinding.
5. method as claimed in claim 2, is characterized in that, grinds the part that described transducing head stays the backfill layer between air cushion surface and front shielding.
6. the method for claim 1, is characterized in that, deposits described front shielding with the ion beam depositing technology.
7. the method for claim 1, is characterized in that, deposits described front shielding with the plasma gas phase deposition technology.
8. the method for claim 1, is characterized in that, comes the described front shielding of etching with the ion grinding technique.
9. the method for claim 1, is characterized in that, comes the described front shielding of etching with reactive ion etching technique.
10. the method for claim 1, is characterized in that, comes the described front shielding of etching with the reactive ion beam etching technology.
11. the method for claim 1 is characterized in that, also comprises:
Form the write device utmost point; And
Form the clearance layer extremely adjacent with write device, wherein said clearance layer is extended between the said write device utmost point and described base.
12. a method that is used to form the transducing head with magnetic writer, described method comprises:
Form the base adjacent with clearance layer;
Shielding before deposition on described base;
Deposition backfill layer in described front shielding, the first of wherein said front shielding is positioned between backfill layer and base; And
Grind described transducing head, surperficial to limit air cushion, wherein grind at least a portion that described transducing head is removed described backfill layer.
13. method as claimed in claim 12 is characterized in that, deposits described front shielding with technique for atomic layer deposition.
14. method as claimed in claim 13 is characterized in that, described front shielding has controlled thickness when deposition.
15. method as claimed in claim 12 is characterized in that, also comprises:
The described front shielding of etching before deposition backfill layer, the thickness of shielding before wherein the described front shielding of etching limits.
16. method as claimed in claim 15 is characterized in that, uses to be selected from the described front shielding of technology etching of lower group, this group comprises: ion grinding, reactive ion etching and reactive ion beam etching.
17. method as claimed in claim 12 is characterized in that, grinds described transducing head described front shielding is exposed to the air cushion surface.
18. method as claimed in claim 12 is characterized in that, grinds the part that described transducing head stays the backfill layer between air cushion surface and front shielding.
19. a magnetic writer that is used for transducing head, described magnetic writer comprises:
The write device utmost point, the said write device utmost point are limited to pole tip on the air cushion surface of described transducing head;
Clearance layer;
Base, wherein said clearance layer is extended between the said write device utmost point and described base;
Front shielding, described front shielding and described base and described clearance layer adjacent positioned; And
Backfill layer, described backfill layer are positioned on the air cushion surface, and the first of wherein said front shielding is positioned between backfill layer and base, and spaced with air cushion.
20. write device as claimed in claim 19 is characterized in that, the second portion of described front shielding extends to described air cushion surface from the first of described front shielding.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/467,736 US8792206B2 (en) | 2009-05-18 | 2009-05-18 | Method and apparatus for controlled front shield thickness for perpendicular writer |
| US12/467,736 | 2009-05-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101923863A CN101923863A (en) | 2010-12-22 |
| CN101923863B true CN101923863B (en) | 2013-11-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010239754 Expired - Fee Related CN101923863B (en) | 2009-05-18 | 2010-05-17 | Method and apparatus for controlled front shield thickness for perpendicular writer |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8792206B2 (en) |
| JP (1) | JP5720871B2 (en) |
| CN (1) | CN101923863B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10896690B1 (en) | 2017-06-07 | 2021-01-19 | Sandisk Technologies Llc | Magnetic head with current assisted magnetic recording and method of making thereof |
| US10891974B1 (en) | 2017-06-07 | 2021-01-12 | Sandisk Technologies Llc | Magnetic head with current assisted magnetic recording and method of making thereof |
| US10839844B1 (en) | 2018-06-18 | 2020-11-17 | Western Digital Technologies, Inc. | Current-assisted magnetic recording write head with wide conductive element in the write gap |
| US11017801B1 (en) | 2018-10-09 | 2021-05-25 | Western Digital Technologies, Inc. | Magnetic head with assisted magnetic recording and method of making thereof |
| US10891975B1 (en) | 2018-10-09 | 2021-01-12 | SanDiskTechnologies LLC. | Magnetic head with assisted magnetic recording and method of making thereof |
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| CN1822098A (en) * | 2005-01-31 | 2006-08-23 | 日立环球储存科技荷兰有限公司 | Method of controlling trailing shield gap during manufacture of perpendicular magnetic head and resulting magnetic head |
| CN101064112A (en) * | 2006-04-25 | 2007-10-31 | 日立环球储存科技荷兰有限公司 | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask |
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| JP2000076618A (en) * | 1998-08-26 | 2000-03-14 | Tdk Corp | Thin film magnetic head and its production |
| JP2000207709A (en) * | 1999-01-13 | 2000-07-28 | Read Rite Smi Kk | Manufacture of thin film magnetic head |
| US6510030B1 (en) * | 1999-08-17 | 2003-01-21 | Seagate Technology, Llc | Transducing head and method for forming a recessed shield for a transducing head |
| JP4116913B2 (en) | 2003-03-26 | 2008-07-09 | Ｔｄｋ株式会社 | Perpendicular magnetic recording head and magnetic recording apparatus |
| US7684150B2 (en) * | 2003-07-09 | 2010-03-23 | Seagate Technology Llc | Recording head for reducing side track erasure |
| US7120988B2 (en) * | 2003-09-26 | 2006-10-17 | Hitachi Global Storage Technologies Netherlands B.V. | Method for forming a write head having air bearing surface (ABS) |
| US7199973B2 (en) * | 2003-09-26 | 2007-04-03 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording head with trailing shield throat height less than shaping layer distance from ABS |
| US7014530B2 (en) * | 2003-09-29 | 2006-03-21 | Hitachi Global Storage Technologies Netherlands B.V. | Slider fabrication system for sliders with integrated electrical lapping guides |
| US7130153B2 (en) * | 2003-09-29 | 2006-10-31 | Hitachi Global Storage Technologies Netherlands B.V. | Stitched write head with staircase P2 defined throat height |
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| US7271982B2 (en) * | 2004-02-13 | 2007-09-18 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording head built using an air-bearing surface damascene process |
| US7265941B2 (en) * | 2004-02-27 | 2007-09-04 | Hitachi Global Storage Technologies Netherlands B.V. | Self-aligned, notched trailing shield for perpendicular recording |
| JP2006004591A (en) * | 2004-05-20 | 2006-01-05 | Alps Electric Co Ltd | Perpendicular magnetic recording head |
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| US7446980B2 (en) * | 2004-10-29 | 2008-11-04 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a stitched “floating” trailing shield for a perpendicular recording head |
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| US8395867B2 (en) * | 2009-03-16 | 2013-03-12 | Dimitar Velikov Dimitrov | Magnetic sensor with a recessed reference layer assembly and a front shield |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1822098A (en) * | 2005-01-31 | 2006-08-23 | 日立环球储存科技荷兰有限公司 | Method of controlling trailing shield gap during manufacture of perpendicular magnetic head and resulting magnetic head |
| CN101064112A (en) * | 2006-04-25 | 2007-10-31 | 日立环球储存科技荷兰有限公司 | Method of manufacturing a wrap around shield for a perpendicular write pole using a laminated mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010267370A (en) | 2010-11-25 |
| JP5720871B2 (en) | 2015-05-20 |
| US8792206B2 (en) | 2014-07-29 |
| US20100290156A1 (en) | 2010-11-18 |
| CN101923863A (en) | 2010-12-22 |
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