CN101922042B - 一种外延片托盘支撑旋转联接装置 - Google Patents
一种外延片托盘支撑旋转联接装置 Download PDFInfo
- Publication number
- CN101922042B CN101922042B CN201010263418.3A CN201010263418A CN101922042B CN 101922042 B CN101922042 B CN 101922042B CN 201010263418 A CN201010263418 A CN 201010263418A CN 101922042 B CN101922042 B CN 101922042B
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- CN
- China
- Prior art keywords
- pallet
- tray
- drive shaft
- counterbore
- rotating shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (8)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010263418.3A CN101922042B (zh) | 2010-08-19 | 2010-08-19 | 一种外延片托盘支撑旋转联接装置 |
DE112011101454T DE112011101454T5 (de) | 2010-08-19 | 2011-07-12 | Epitaxialwafer-Suszeptor und dem Suszeptor angepasste Halte- und Dreh-Verbindungsvorrichtung |
PCT/CN2011/001147 WO2012022111A1 (zh) | 2010-08-19 | 2011-07-12 | 一种外延片托盘及与其配合的支撑和旋转联接装置 |
US13/670,933 US20130061805A1 (en) | 2010-08-19 | 2012-11-07 | Epitaxial wafer susceptor and supportive and rotational connection apparatus matching the susceptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010263418.3A CN101922042B (zh) | 2010-08-19 | 2010-08-19 | 一种外延片托盘支撑旋转联接装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101922042A CN101922042A (zh) | 2010-12-22 |
CN101922042B true CN101922042B (zh) | 2012-05-30 |
Family
ID=43337242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010263418.3A Active CN101922042B (zh) | 2010-08-19 | 2010-08-19 | 一种外延片托盘支撑旋转联接装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130061805A1 (zh) |
CN (1) | CN101922042B (zh) |
DE (1) | DE112011101454T5 (zh) |
WO (1) | WO2012022111A1 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2215282B1 (en) | 2007-10-11 | 2016-11-30 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
CN101922042B (zh) * | 2010-08-19 | 2012-05-30 | 江苏中晟半导体设备有限公司 | 一种外延片托盘支撑旋转联接装置 |
CN102154690B (zh) * | 2011-05-23 | 2012-05-30 | 东莞市天域半导体科技有限公司 | 行星式外延生长设备中托盘的构成方法和装置 |
CN103132051B (zh) * | 2011-11-23 | 2015-07-08 | 中微半导体设备(上海)有限公司 | 化学气相沉积反应器或外延层生长反应器及其支撑装置 |
US9816184B2 (en) * | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
CN103205731A (zh) * | 2012-03-21 | 2013-07-17 | 江苏汉莱科技有限公司 | 一种mocvd新反应系统 |
CN102758192B (zh) * | 2012-06-05 | 2014-08-20 | 中国电子科技集团公司第四十八研究所 | 一种半导体外延片载片盘及其支撑装置及mocvd反应室 |
CN103540912B (zh) * | 2012-07-09 | 2016-06-08 | 中晟光电设备(上海)股份有限公司 | Mocvd设备及该设备中的托盘支撑旋转系统 |
US9316443B2 (en) * | 2012-08-23 | 2016-04-19 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US9093482B2 (en) * | 2012-10-12 | 2015-07-28 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US9748120B2 (en) | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
CN103215563A (zh) * | 2013-04-28 | 2013-07-24 | 光垒光电科技(上海)有限公司 | 沉积设备以及旋转装置 |
US9245777B2 (en) * | 2013-05-15 | 2016-01-26 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus |
CN103436862B (zh) * | 2013-08-06 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | 一种用于mocvd反应器的支撑轴及mocvd反应器 |
CN105575860B (zh) * | 2014-10-09 | 2018-09-14 | 北京北方华创微电子装备有限公司 | 托盘的旋转连接组件以及应用其的反应腔室 |
EP3310941B1 (de) * | 2015-06-16 | 2020-12-30 | Schneider GmbH & Co. KG | Vorrichtung und verfahren zur beschichtung von linsen |
CN105350073B (zh) * | 2015-10-30 | 2018-09-25 | 中国电子科技集团公司第四十八研究所 | 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统 |
CN106801222B (zh) * | 2015-11-26 | 2018-06-19 | 中晟光电设备(上海)股份有限公司 | 一种晶片托盘及mocvd系统 |
ITUB20160556A1 (it) * | 2016-02-08 | 2017-08-08 | L P E S P A | Suscettore con perno riscaldato e reattore per deposizione epitassiale |
TWI619198B (zh) * | 2016-03-14 | 2018-03-21 | Wafer carrier | |
DE102016125273A1 (de) | 2016-12-14 | 2018-06-14 | Schneider Gmbh & Co. Kg | Anlage, Verfahren und Träger zur Beschichtung von Brillengläsern |
CN110943029A (zh) * | 2019-12-30 | 2020-03-31 | 浙江求是半导体设备有限公司 | 一种用于半导体外延系统的双环式基座 |
CN111554610A (zh) * | 2020-04-16 | 2020-08-18 | 清华大学 | 微腔刻蚀基底盛放装置及微腔刻蚀系统 |
EP4523250A1 (en) * | 2022-05-12 | 2025-03-19 | Watlow Electric Manufacturing Company | Hybrid shaft assembly for thermal control in heated semiconductor pedestals |
CN115161766B (zh) * | 2022-07-14 | 2024-04-26 | 中国电子科技集团公司第四十八研究所 | 硅外延设备的石墨基座旋转结构及石墨基座水平调节方法 |
CN115216843B (zh) * | 2022-07-14 | 2023-07-07 | 深圳市纳设智能装备有限公司 | 一种石墨托盘状态检测方法、装置、系统和终端设备 |
CN115747958A (zh) * | 2022-12-15 | 2023-03-07 | 西安奕斯伟材料科技有限公司 | 硅片外延生长支撑装置及硅片外延生长设备 |
CN117888201A (zh) * | 2023-12-29 | 2024-04-16 | 纳设智能装备(江苏)有限公司 | 一种驱动传动装置及外延设备反应装置 |
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CN1644754A (zh) * | 2004-10-19 | 2005-07-27 | 吉林大学 | 氧化锌生长用低压金属有机化学汽相沉积设备及其工艺 |
CN1782142A (zh) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | 晶片导向器,mocvd装置和氮化物半导体生长方法 |
CN101224862A (zh) * | 2007-01-15 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种真空旋转升降装置 |
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US3008447A (en) * | 1958-11-15 | 1961-11-14 | Electronique & Automatisme Sa | Apparatus for the production of electrically conductive film layers of controlled resistivity |
US3633537A (en) * | 1970-07-06 | 1972-01-11 | Gen Motors Corp | Vapor deposition apparatus with planetary susceptor |
US3828580A (en) * | 1971-05-03 | 1974-08-13 | Bosch Gmbh Robert | Coupling construction |
JPS62284079A (ja) * | 1986-05-31 | 1987-12-09 | Babcock Hitachi Kk | 光化学的気相堆積装置 |
US4993355A (en) * | 1987-03-31 | 1991-02-19 | Epsilon Technology, Inc. | Susceptor with temperature sensing device |
US4999211A (en) * | 1989-09-22 | 1991-03-12 | Itt Corporation | Apparatus and method for making a photocathode |
JPH05109655A (ja) * | 1991-10-15 | 1993-04-30 | Applied Materials Japan Kk | Cvd−スパツタ装置 |
JPH06310438A (ja) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
JPH10154740A (ja) * | 1996-11-22 | 1998-06-09 | Mecs:Kk | ウェハとトレーのセッティングシステムとそのためのトレーへのウェハセッティング装置 |
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JP2002231645A (ja) * | 2001-02-02 | 2002-08-16 | Ngk Insulators Ltd | 窒化物半導体膜の製造方法 |
US6506252B2 (en) * | 2001-02-07 | 2003-01-14 | Emcore Corporation | Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
JP4331901B2 (ja) * | 2001-03-30 | 2009-09-16 | 日本碍子株式会社 | セラミックサセプターの支持構造 |
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US8021487B2 (en) * | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
CN101922042B (zh) * | 2010-08-19 | 2012-05-30 | 江苏中晟半导体设备有限公司 | 一种外延片托盘支撑旋转联接装置 |
CN101906622B (zh) * | 2010-08-20 | 2013-03-20 | 江苏中晟半导体设备有限公司 | 用于mocvd系统中控制外延片温度及均匀性的装置与方法 |
-
2010
- 2010-08-19 CN CN201010263418.3A patent/CN101922042B/zh active Active
-
2011
- 2011-07-12 WO PCT/CN2011/001147 patent/WO2012022111A1/zh active Application Filing
- 2011-07-12 DE DE112011101454T patent/DE112011101454T5/de not_active Ceased
-
2012
- 2012-11-07 US US13/670,933 patent/US20130061805A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1644754A (zh) * | 2004-10-19 | 2005-07-27 | 吉林大学 | 氧化锌生长用低压金属有机化学汽相沉积设备及其工艺 |
CN1782142A (zh) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | 晶片导向器,mocvd装置和氮化物半导体生长方法 |
CN101224862A (zh) * | 2007-01-15 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种真空旋转升降装置 |
Also Published As
Publication number | Publication date |
---|---|
DE112011101454T5 (de) | 2013-03-14 |
CN101922042A (zh) | 2010-12-22 |
WO2012022111A1 (zh) | 2012-02-23 |
US20130061805A1 (en) | 2013-03-14 |
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