CN101906269A - Slurry for metal chemical and mechanical polishing and using method thereof - Google Patents
Slurry for metal chemical and mechanical polishing and using method thereof Download PDFInfo
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- CN101906269A CN101906269A CN2009100526586A CN200910052658A CN101906269A CN 101906269 A CN101906269 A CN 101906269A CN 2009100526586 A CN2009100526586 A CN 2009100526586A CN 200910052658 A CN200910052658 A CN 200910052658A CN 101906269 A CN101906269 A CN 101906269A
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- polishing
- polishing slurries
- abrasive grains
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- 238000005498 polishing Methods 0.000 title claims abstract description 82
- 239000002002 slurry Substances 0.000 title claims abstract description 32
- 239000000126 substance Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 3
- 239000006061 abrasive grain Substances 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 239000002738 chelating agent Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 150000007524 organic acids Chemical group 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000007769 metal material Substances 0.000 abstract description 3
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a slurry for metal chemical and mechanical polishing and a using method thereof. The slurry comprises abrasive particles, an oxidant, a polishing stabilizer and a carrier. When the slurry for the chemical and mechanical polishing is used, the stability of polishing solution can be improved, pollution on polishing pad and polishing machine is relieved, the local and entire corrosion of a metal material can be controlled, the pollutants on the surface of the substrate are reduced, and product yield is improved.
Description
Technical field
The present invention relates to a kind of slurry and using method thereof that is used for chemical mechanical polishing of metals.
Background technology
Polishing technology has become with photoetching and etching is of equal importance and one of complementary indispensable gordian technique in the IC manufacturing process.And chemically machinery polished (CMP) technology is effective, the most sophisticated polishing technology at present.Chemical-mechanical polishing system is the chemical Mechanical Polishing Technique that integrates technology such as cleaning, drying, online detection, end point determination, being unicircuit (IC) to the product of miniaturization, multiple stratification, polishing, slimming development, is that unicircuit is enhanced productivity, reduced cost, the indispensable technology of wafer overall situation polishing.CMP is widely used in IC manufacturing field, and the polishing object comprises substrate, medium and interconnection material etc.Wherein metal CMP is the device and one of critical process of making that interconnects in the following chip manufacturing of 90 nanometers, is the research focus of inferior 90 nanometer era.Metallic copper, aluminium, tungsten are applied to the interconnection on the integrated circuit (IC)-components just more and more, must realize multilayer interconnection by chemically machinery polished, thereby the chemical mechanical polishing of metals liquid of developing a new generation allows industry pay close attention to always.
It is that the composition of oxygenant is used for the tungsten polishing with the iron nitrate that US4789648 and US4944836 disclose, but said composition is extremely unstable, polishing pad, polishing machine platform there are deep-etching and pollution, simultaneously transport pipeline also there is pollution, although there are US 6284151 patents to make improvements, still be difficult to overcome this unstable, to polishing pad, polishing machine platform has the major defect of deep-etching and pollution.US5958288 discloses a kind of composition that contains oxygenant and many oxidized catalyst and has been used for the tungsten polishing; US 5980775 and US6068787 disclose a kind of composition that contains oxygenant and many oxidized catalyst and stablizer simultaneously can realize the tungsten polishing.CN 200580019842.0 discloses a kind of oxygenant and many oxidized catalyst, composition of stablizer and corrosion inhibitor of containing; Above patent all need be used hydrogen peroxide as oxygenant.Hydrogen peroxide is a kind of etching agent of tungsten, and is particularly at high temperature, fairly obvious to the corrosion of tungsten.Therefore be necessary to seek a kind of new polishing system, can control the absolute removal speed of metal and relative removal speed ratio, control the part and the general corrosion of metallic substance simultaneously, reduce substrate surface pollutent etc. dielectric substance.
Summary of the invention
The objective of the invention is to overcome the polishing defect that exists in the prior art, provide a kind of and can improve polishing fluid steady time and product yield, minimizing is to the pollution of polishing pad, polishing machine platform, control the part and the general corrosion of the material of metal simultaneously, reduce the chemical mechanical polishing slurry and the using method thereof of substrate surface pollutent.
Chemical mechanical polishing of metals slurry of the present invention includes abrasive grains, oxygenant, polishing stablizer and carrier.
In an embodiment of the present invention, the concentration of this abrasive grains is 0.1～10%, and the concentration of this oxygenant is 0.1～2%, and the concentration of polishing stablizer is 0.01～2%, carrier is a surplus, and above per-cent all refers to account for the total weight percent of whole chemical mechanical polishing slurry.
Abrasive grains of the present invention can be with reference to prior art, and preferred silicon oxide, aluminum oxide, cerium oxide and/or polymer beads are as polyethylene or tetrafluoroethylene, more preferably silicon oxide.
In the present invention, the size of this abrasive grains preferably is 20～200nm, more preferably is 30～100nm.
In the present invention, described oxygenant can be various burning agent of the prior art, preferably for being selected from Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, one or more in the salt with oxidisability of Ce and V.
In the present invention, described polishing stablizer can be used as the complexing agent that can form the complex compound of colourless/light color with the respective metal oxygenant, can effectively eliminate the pollution of burning agent to polishing pad, stablizes polishing performance simultaneously.For example various organic acids, mineral acid, metal chelating agent or the like.
Dielectric layer of the present invention is 2.0～12.0 with chemical mechanical polishing slurry pH value, preferably 2.0-5.0 and 9.0-12.0.The pH regulator agent can be various acid and/or alkali, so that pH regulator to desirable value is got final product, and sulfuric acid preferably, nitric acid, phosphoric acid, ammoniacal liquor, potassium hydroxide, thanomin and/or trolamine or the like.
Chemical mechanical polishing slurry of the present invention also can comprise common oxygenant, for example nitric acid or nitrate, organo-peroxide, other organic oxidizing agent etc.And tensio-active agent, pH stablizer, inhibitor and sterilant are with the further polishing performance that improves the surface.
The present invention also comprises the using method of above-mentioned polishing slurries, and specifically after preparing polishing slurries, with overdraft 1-5psi, a rotating speed is 70-110rpm, polishing disk rotating speed 70-110rpm, and polishing slurries flow velocity 50-120ml/min carries out chemically machinery polished.
The present invention is applicable to tungsten, titanium/titanium nitride, copper, tantalum/tantalum nitride, the chemically machinery polished that waits.
Positive progressive effect of the present invention is:
1) by the effect raising polishing fluid steady time of polishing system, reduces to polishing pad the pollution of polishing machine platform;
2) control the part and the general corrosion of metallic substance simultaneously, reduce board and substrate surface pollutent, improve the product yield.
Description of drawings
Fig. 1 is the room temperature storage validity period that does not have the polishing fluid under the stablizer situation, is easy to produce polishing pad and pollutes, can variable color after sample spends the night in stove, and W removes the speed fairly obvious Comparative Examples 1 that descends;
Fig. 2 is the room temperature storage validity period that the polishing fluid under the stablizer situation is arranged, and the pollution of polishing pad has obtained very big improvement, also can nondiscoloration after 15 days in stove, and can in 3 weeks, keep W and remove rate stabilization embodiment 1;
Fig. 3 is scanning electronic microscope (SEM) image of embodiment 2;
Fig. 4 is scanning electronic microscope (SEM) image of Comparative Examples 2.
Embodiment
Further specify content of the present invention below by embodiment.
According to each polishing slurries of table 1 preparation, successively add in reactor by the order of abrasive grains, water, oxygenant, stablizer each material and stir, add deionized water and be diluted to volume requiredly, use pH regulator agent (20%KOH or rare HNO at last
3, select according to the needs of pH value) be adjusted to required pH value and continue to be stirred to uniform fluid, can obtain chemical mechanical polishing slurry in static 30 minutes.
Table 1, embodiment 1～18 and Comparative Examples 1～2
Effect embodiment
Respectively with the chemical mechanical polishing slurry of the foregoing description 1,2 to comprising the W substrate and for figuratum W silicon wafer polishing, polishing condition is identical, burnishing parameters is as follows: the Logitech polishing pad, downward pressure 3-5psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 120s, chemical mechanical polishing slurry flow velocity 100ml/min.Polish results sees Table 2.
Table 2, embodiment 2 and the correlated result of Comparative Examples 2 polishing slurries
Fig. 1 and Fig. 2 are respectively the comparison of Comparative Examples 1 and embodiment 1, and the polishing of Comparative Examples is low steady time as we can clearly see from the figure, pollute also bigger to polishing pad simultaneously.And Fig. 3 and Fig. 4 are respectively the comparison of embodiment 2 and Comparative Examples 2, have produced the obvious corrosion hole after polishing with Comparative Examples 2 as we can clearly see from the figure, and also comparatively serious to dielectric substrate erosion, specifically see Table 2.
Can see by table 2 data, no matter in room temperature or under hot conditions, the tungsten erosion rate of Comparative Examples is all greater than embodiment, dielectric substrate erosion is also greater than embodiment simultaneously, the obvious corrosion hole also appears in the Comparative Examples metallic surface, proves absolutely that embodiment is better than Comparative Examples aspect corrosion control.
Therefore use chemical mechanical polishing slurry of the present invention can improve polishing fluid steady time, reduce to polishing pad the pollution of polishing machine platform; Control the part and the general corrosion of the material of metal simultaneously, reduce board and substrate surface pollutent, improve the product yield.
Claims (10)
1. a chemical mechanical polishing of metals slurry comprises: abrasive grains, oxygenant, polishing stablizer and carrier.
2. polishing slurries according to claim 1 is characterized in that the mass percent concentration of described abrasive grains is 0.1～10%, and the mass percent concentration of described oxygenant is 0.1～2%, and the mass percent concentration of described polishing stablizer is 0.01～2%.
3. polishing slurries according to claim 1 is characterized in that described abrasive grains is selected from one or more in silicon oxide, aluminum oxide, cerium oxide and the polymer beads.
4. as polishing slurries as described in the claim 3, it is characterized in that described polymer beads is polyethylene or tetrafluoroethylene.
5. polishing slurries according to claim 1 is characterized in that described abrasive grains is of a size of 20～200nm.
6. as polishing slurries as described in the claim 6, it is characterized in that described abrasive grains is of a size of 30～100nm.
7. polishing slurries according to claim 1 is characterized in that described oxygenant is selected from Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, one or more in the salt of Ce and V.
8. polishing slurries according to claim 1 is characterized in that described stablizer is selected from organic acid, one or more in mineral acid and the metal chelating agent.
9. polishing slurries according to claim 1 is characterized in that, described polishing slurries also can comprise and is selected from nitric acid, nitrate, organo-peroxide, other organic oxidizing agent, tensio-active agent, pH stablizer, one or more in inhibitor and the sterilant.
10. as the using method of the described chemical mechanical polishing slurry of claim 1～9, it is characterized in that with overdraft 1-5psi, a rotating speed is 70-110rpm, polishing disk rotating speed 70-110rpm, described polishing slurries flow velocity 50-120ml/min carries out chemically machinery polished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100526586A CN101906269A (en) | 2009-06-08 | 2009-06-08 | Slurry for metal chemical and mechanical polishing and using method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100526586A CN101906269A (en) | 2009-06-08 | 2009-06-08 | Slurry for metal chemical and mechanical polishing and using method thereof |
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| Publication Number | Publication Date |
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| CN101906269A true CN101906269A (en) | 2010-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009100526586A Pending CN101906269A (en) | 2009-06-08 | 2009-06-08 | Slurry for metal chemical and mechanical polishing and using method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104017499A (en) * | 2014-05-19 | 2014-09-03 | 贵州荣清工具有限公司 | Diamond grinding paste |
| US20140352910A1 (en) * | 2011-10-07 | 2014-12-04 | Ask Chemicals Gmbh | Coating compositions for inorganic casting molds and cores, containing salts, and use thereof |
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| CN108192506A (en) * | 2018-02-09 | 2018-06-22 | 东莞华拓研磨材料有限公司 | A kind of metal surface grinding with polishing agent and preparation method |
| CN112920716A (en) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | Composition for titanium nitride chemical mechanical polishing and using method thereof |
| CN113004801A (en) * | 2019-12-20 | 2021-06-22 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| KR102794806B1 (en) | 2019-12-20 | 2025-04-14 | 안지 마이크로일렉트로닉스 (상하이) 컴퍼니 리미티드 | Chemical mechanical polishing solution |
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| CN101195729A (en) * | 2006-12-08 | 2008-06-11 | 安集微电子（上海）有限公司 | Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution |
| US20090095939A1 (en) * | 2007-10-10 | 2009-04-16 | Cheil Industries Inc. | Slurry Composition for Chemical Mechanical Polishing of Metal and Polishing Method Using the Same |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140352910A1 (en) * | 2011-10-07 | 2014-12-04 | Ask Chemicals Gmbh | Coating compositions for inorganic casting molds and cores, containing salts, and use thereof |
| CN104745084A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical solution for aluminum, and use method thereof |
| CN104017499A (en) * | 2014-05-19 | 2014-09-03 | 贵州荣清工具有限公司 | Diamond grinding paste |
| CN104017499B (en) * | 2014-05-19 | 2015-08-19 | 贵州荣清工具有限公司 | A kind of diamond paste |
| CN108192506A (en) * | 2018-02-09 | 2018-06-22 | 东莞华拓研磨材料有限公司 | A kind of metal surface grinding with polishing agent and preparation method |
| CN113004801A (en) * | 2019-12-20 | 2021-06-22 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
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| CN113004801B (en) * | 2019-12-20 | 2024-03-12 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| KR102794806B1 (en) | 2019-12-20 | 2025-04-14 | 안지 마이크로일렉트로닉스 (상하이) 컴퍼니 리미티드 | Chemical mechanical polishing solution |
| CN112920716A (en) * | 2021-01-26 | 2021-06-08 | 中国科学院上海微系统与信息技术研究所 | Composition for titanium nitride chemical mechanical polishing and using method thereof |
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Application publication date: 20101208 |