CN101903970A - Double plasma ion source - Google Patents
Double plasma ion source Download PDFInfo
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- CN101903970A CN101903970A CN2008801219714A CN200880121971A CN101903970A CN 101903970 A CN101903970 A CN 101903970A CN 2008801219714 A CN2008801219714 A CN 2008801219714A CN 200880121971 A CN200880121971 A CN 200880121971A CN 101903970 A CN101903970 A CN 101903970A
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- ion source
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- 238000000605 extraction Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 132
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 24
- 239000007943 implant Substances 0.000 claims description 24
- 238000010884 ion-beam technique Methods 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910015900 BF3 Inorganic materials 0.000 claims description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 12
- 229920000554 ionomer Polymers 0.000 claims description 11
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910000085 borane Inorganic materials 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 10
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052724 xenon Inorganic materials 0.000 claims description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 4
- 230000001133 acceleration Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 126
- 210000002381 plasma Anatomy 0.000 description 158
- 239000002019 doping agent Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000752 ionisation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 150000001793 charged compounds Chemical class 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229940090044 injection Drugs 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/077—Electron guns using discharge in gases or vapours as electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06366—Gas discharge electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
An ion source 100, comprising a first plasma chamber 102 including a plasma generating component 104 and a first gas inlet 122 for receiving a first gas such that said plasma generating component 104 and said first gas interact to generate a first plasma within said first plasma chamber 102, wherein said first plasma chamber 102 further defines an aperture 114 for extracting electrons from said first plasma, and a second plasma chamber 116 including a second gas inlet 118 for receiving a second gas, wherein said second plasma chamber 116 further defines an aperture 117 in substantial alignment with the aperture 112 of said first plasma chamber 102, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber 116, said second plasma chamber 116 further defining an extraction aperture 120 for extracting ions from said second plasma.
Description
Technical field
The present invention relates to ion implant systems on the whole, relates in particular to be used to utilize double-plasma ion source to carry out the system and method that ion injects.
Background technology
In the manufacturing of semiconductor device and further product, ion implant systems is used for doped chemical is injected into semiconductor workpiece, display floater and glass substrate etc.In order to make n type and/or p type doped region, perhaps in workpiece, form passivation layer, typical ion implant systems or ion implantor inject workpiece with the ion beam of impurity.When being used for doped semiconductor, the ionic species that ion implant systems will have been selected is expelled in the described workpiece, to produce the extrinsic material character of expectation.Typically, dopant atom or molecule are ionized and isolate, are accelerated and/or slow down, are formed bundle, and are injected in the workpiece.The surface of workpiece is clashed into and entered to dopant ion with physics mode, and typically rest on the following of surface of the work and be arranged in its lattice structure.
The normally set of complicated subsystem of typical ion implant systems, wherein each subsystem is carried out specific action to dopant ion.Can introduce dopant element with gas form (for example process gas) or with solid form (being evaporated subsequently), wherein said dopant element is set at the inside of ionization chamber and carries out ionization by the ionization process that is fit to.In the past during the decade, so-called " Bemas-style " ion source is received as the industrial standard that is used for high electric current and current ion injected system widely.For example, ionization chamber is maintained at (for example vacuum) under the low-pressure, and wherein for example silk is positioned at ionization chamber and is heated to the temperature spot that electronics is launched from silk.Then, attracted to electrical opposite anode in the described chamber from the electronegative electronics of described silk, wherein in the traveling process from the silk to the anode, electronics and dopant source elements (for example molecule or atom) collision, this can cause electronics to separate with the source gas material, thereby make described source gas ionization and produce plasma, promptly from the ion and the electronegative electronics of a plurality of positively chargeds of dopant source elements.The ion of positively charged " is drawn " from described chamber by drawing seam or hole via extraction electrode subsequently, wherein guides ion along ion beam path towards workpiece usually.
The heated wire cathode of the above-mentioned type usually can be along with time degenerate apace (degrade).Therefore, developed, and it has been deployed in the commercial ion implant systems such ionogenic common variant, it adopts the negative electrode (IHC) of indirect, wherein electronic emitter is the cylindrical shape negative electrode that is set in the ionization chamber, and general diameter is 10mm, and thickness is 5mm.Described negative electrode is heated by the electron beam of drawing from the silk that is positioned at the negative electrode back, thus the protected influence of avoiding the harsh and unforgiving environments of ionization chamber.(for example by commonly assigned the 5th, 497, No. 006 United States Patent (USP) giving applicant of the present invention) illustrates an exemplary IHC ion source in other patent.
In the situation of wire cathode, the power of cathode heater is usually on the magnitude of several hectowatts, and in the situation of IHC, described power is usually on one kilowatt magnitude.With the standard injecting gas (as boron trifluoride (BF
3), hydrogen phosphide (PH
3) and arsenic hydride (AsH
3)) when operating, typical maximum derivative ion beam current is in 50 in the scope of 100mA, needs hundreds of watts discharge power (cathode voltage multiply by cathode current).Under the situation with these cathode heater power and discharge power, ionogenic wall can reach usually and surpass 400 degrees centigrade temperature.For the operation of calibrating gas,, thereby greatly reduce in the cross pollution that changes kind of time-like, so these high wall temperatures are favourable because prevented phosphorus and arsenic condensing on wall.
Inject for low-energy boron, the verified improvement that has essence on output for example, is used big single charged ion (decaborane (B for example
10H
14) or 18 borine (B
18H
22)).In order to prevent the decomposition of molecule, the discharge power of so big molecular plasma is compared with the standard injecting gas with plasma density and must be remained on the lower level.Usually, the ionic current of drawing is 5 to 10mA, only needs tens watts discharge power.Although above-mentioned standard source can use the operation stably under these low power of standard injecting gas, when operation decaborane or 18 borines, can encounter problems.The situation in the Bernas source that contacts with gas for silk, described silk is subjected to the attack (attack) of borine, and can't keep stable discharge.In the situation of IHC, it is more stable to discharge, but macromolecular thermal decomposition height must be difficult to accept.Because the high radiant power of negative electrode, decomposition occurs on hot cathode and the wall simultaneously, and hot cathode and wall are difficult to remain in low temperature.
In the problems referred to above that run into when operating with gas (for example decaborane and 18 borines), can overcome by removing electron source from ionization chamber.The 6th, 686, a kind of such scheme has been described in No. 595 the United States Patent (USP), wherein traditional wide beam electron gun is installed in the outside of ionization chamber, and electron beam through-hole is directed in the ionization chamber.But in such source configuration, because the basic principle restriction of electron gun design, the electronic current that is expelled in the ionization chamber is restricted to tens milliamperes.Because when the standard ionomer beam electronic current is 50 to 100mA,, be not suitable for such operation so such ion source disposes with the electronic current of hundreds of milliamperes to several amperes of the action needs of standard injecting gas.In fact, ion implant systems manufacturers have been fully recognized that such problem, at least for example the 7th, 022, described a kind of scheme in No. 999 United States Patent (USP)s, wherein proposed ionization chamber is configured to the operator scheme of two kinds of separation: a kind of pattern is used for low electronic current ionization and uses; Being used for high electronic current ionization with a kind of pattern uses.Alternately, a kind of ion source configuration has been proposed in US2006/0169915 U.S. Patent Application Publication publication, wherein first electron source and second electron source are positioned at the relative two ends of arc chamber, and wherein each electron source is energized in one in so-called hot operation pattern and " cold " operator scheme.
Therefore, in order to satisfy more demands that ion injects industry, for being used for big molecular gas (so-called " molecular species ") at low source wall temperature with low discharge power is operated and for the ion source that standard injecting gas (so-called " monomeric species ") is operated under high wall temperature and high discharge power, have demand.
Summary of the invention
The present invention has overcome restriction to prior art by a kind of two plasmas or double-plasma ion source system and method are provided, and it is used for operating effectively and can utilizes big molecule (for example decaborane and 18 borines) and such as BF
3, PH
3And AsH
3The ion source of standard injecting gas.Therefore, the summary of the invention of simplification of the present invention has been proposed below, so that the basic comprehension to some aspect of the present invention to be provided.This summary of the invention is not to extensive overview of the present invention.Not to distinguish important or key element of the present invention, neither describe scope of the present invention.The form to simplify that its objective is proposes notions more of the present invention, as the preorder of the more detailed description that proposes subsequently.The present invention relates to the ion source that uses on the whole in ion implant systems, wherein said ion source comprises two or more plasma chambers, making the plasma chamber of winning is exercisablely to be used for being injected into the electronics of second plasma chamber with generation, makes that second plasma chamber can be efficiently and produce the intrafascicular ion of ion line that is used to inject ion implant systems effectively.
According to an illustrative aspects of the present invention, a kind of ion source is provided, and described ion source comprises: first plasma chamber (being called as the electron source plasma chamber hereinafter) comprises the plasma generation parts that are used for producing from the first source ionisation of gas plasma; With second plasma chamber (being called as the ion source plasma chamber hereinafter), be injected in second plasma chamber from the electronics of electron source plasma chamber, thereby produce plasma from the second source gas.Described ion source can comprise the high pressure extraction system, and described high voltage extraction system comprises and is configured to the electrode system of drawing ion by the fairlead that forms therein from described ion source plasma chamber.
According to another illustrative aspects of the present invention, a kind of method that is used to produce ion is provided, described method comprises: form the electron source plasma in first plasma chamber; Draw electronics in the plasma that from the described first plasma generation chamber, forms; So that in second plasma chamber, derivative thus electronics produces plasma in second plasma chamber with derivative electronic guide; And draw ion by the fairlead that is arranged in described second plasma chamber.
According to another aspect of the invention, a kind of ion implant systems is provided, it comprises and is used for ion is expelled to the intrafascicular ion source that is used to be injected into workpiece of ion line that described ion source comprises: first plasma chamber (electron source plasma chamber) that is used for producing from the first source ionisation of gas plasma; With second plasma chamber (ion source plasma chamber), be injected in second plasma chamber from the electronics of described electron source plasma chamber, be used for producing plasma from the second source gas.Ion implant systems comprises extraction system, and described extraction system comprises and is configured to the electrode of drawing ion by the fairlead that forms therein from described ion source plasma chamber.
In order to realize aforesaid purpose and relevant purpose, the present invention includes hereinafter that described all sidedly and feature that particularly point out in the claims.Following description and accompanying drawing have elaborated certain illustrative embodiment of the present invention.Yet these embodiment just can adopt a few the representative in the multiple mode of principle of the present invention.When considering in conjunction with the accompanying drawings, by to following detailed description of the present invention, other purpose of the present invention, advantage and novel feature will become clear.
Description of drawings
Fig. 1 illustrates the isometric transparent view of exemplary ion source according to an aspect of the present invention;
Fig. 2 illustrates the perspective cross-sectional view of exemplary ion source according to an aspect of the present invention;
Fig. 3 illustrates the calcspar that is used for producing and drawing from ion source the illustrative methods of ion according to another illustrative aspects of the present invention; With
Fig. 4 is the schematic diagram of the exemplary ion injected system of utilizing exemplary ion source according to another aspect of the present invention.
Embodiment
The present invention relates generally at ion and inject the improved ion source apparatus that uses.More specifically, system and method of the present invention provides a kind of effective and efficient manner, producing molecular ion in order to the big molecular ionization gas of ionization injects kind and (such as carborane, decaborane, 18 borines and eicosaborane B20H16 (icosaboranes), and produces the monomer ion in order to ionization standard ionized gas and inject kind (such as boron trifluoride, hydrogen phosphide and arsenic hydride).Be to be understood that: the above-mentioned tabulation of ion injection kind is provided and only is the illustrative purpose, and not will be understood that representative can be used for producing the complete list that ion injects the ionized gas of kind.Therefore, describe the present invention now with reference to accompanying drawing, wherein similar reference number is used to represent similar element from start to finish.The description that should be appreciated that these aspects is just illustrative, and should not have any limited significance with being understood as that.In the following description, for illustration purpose, many specific detail are set forth, in order to complete understanding of the present invention to be provided.Yet will understand is not for a person skilled in the art having can to implement the present invention under the situation of these specific detail yet.
Referring now to Fig. 1 and Fig. 2, it has shown the ion source 100 according to simplified example of the present invention, and wherein ion source 100 is fit to implement one or more aspect of the present invention.Should be noted that it only is for illustrative purposes that the ion source of describing 100 is provided in Fig. 1, and be not to comprise ionogenic all aspects, parts and feature.On the contrary, depicted example ion source 100, thus be convenient to further understanding of the present invention.
For example, ion source 100 comprises first plasma chamber 102 that is set up near second plasma chamber 116.First plasma chamber 102 comprises gas source supply line 106, and has disposed the plasma generation parts 104 that are used for producing from the first source gas plasma.Source gas is introduced in first plasma chamber 102 by gas supply line 106.Source gas can comprise at least a in following: the inert gas of argon gas (Ar) and xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) and hydrogen phosphide (PH
3) the standard ionomer injecting gas; And oxygen (O for example
2) and Nitrogen trifluoride (NF
3) active gases.It only is to be the illustrative purpose that the above-mentioned tabulation that equally also should be appreciated that source gas is provided, and should not be considered to represent to be transported to the complete list of the source gas of first plasma chamber.
First or electron source plasma chamber 102 define hole 112, the path that this hole 112 forms in the high vacuum region that enters ion implant systems, the i.e. much lower zone of pressure of the source gas in pressure ratio first plasma chamber 102.Hole 112 provides SS, is used to keep the source gas purity to be in high level, as will further discussing hereinafter.
Electron source plasma chamber 102 also defines hole 114, and described hole 114 is formed for drawing from electron source plasma chamber 102 fairlead of electronics.In a preferred embodiment, as shown in Figure 2, fairlead 114 is configured to the form of removable anode component 110, has wherein formed hole 114.In like manner, person of skill in the art will appreciate that, electron source plasma chamber 102 can be configured to have (with respect to negative electrode 108) by the electrode 119 of forward bias, be used for the electronics of so-called non-turning back (non-reflex) pattern attraction from plasma.Alternately, electrode 119 can carry out negative bias with respect to negative electrode 108, with so that electronics torn open and turn back in the electron source plasma chamber 102 by row with so-called turning back (reflex) pattern.Be to be understood that: this fold-back mode configuration will need the article on plasma body lumen wall to carry out suitable bias voltage, and electrode 119 is electrically insulated and independent bias voltage.
As previously mentioned, ion source 100 of the present invention also comprises second or ion source chamber 116.The second ion source plasma chamber 116 comprises the second gas source supply line 118 that is used for ion source gas is incorporated into ion source plasma chamber 116, and be further configured the electronics that becomes to hold from electron source plasma chamber 102, thereby produce plasma therein by the collision between the electronics and the second source gas.The second source gas can comprise any gas that is used for electron source plasma chamber 102 listed above, or any big molecular gas (carborane (C for example
2B
10H
12), decaborane (B
10H
14) and 18 borine (B
18H
22) or eicosaborane B20H16).Be to be understood that equally: it only is for illustrative purposes that the above-mentioned tabulation of source gas is provided, and not will be understood that it is the complete list that expression can be transported to the source gas of second plasma chamber 116.
Second or ion source plasma chamber 116 define the hole of aiming at the fairlead 114 of first plasma chamber 102 117, thereby between them, form path, be used for allowing to be flow into second plasma chamber 116 by the electronics of drawing from first plasma chamber 102.Preferably, ion source plasma chamber 116 is configured to have the electrode 119 of forward bias, be used for being injected into the electronics in ion source plasma chamber 116,, produce ionic plasma between electronics and gas molecule, to produce the collision of expectation with so-called non-fold-back mode attraction.Alternately, electrode 119 can be by negative bias, so that with so-called turning back (reflex) pattern electronics row is torn open and turns back in the ion source plasma chamber 116.
Fairlead 120 is configured in second plasma chamber 116, to draw ion in order to form ion beam, so that inject with common mode.
Be important to note that, second plasma chamber 116 preferably utilize external bias power supply device 115 with respect to first plasma chamber 102 by forward bias.Therefore electronics is drawn from electron source plasma chamber 102, and is injected in the ion source plasma chamber 116 to produce plasma; In second plasma chamber 116 at the electronics that provides by first plasma chamber 102 and be supplied to by the second gas source supply line 118 between the supply gas of second plasma chamber 116 and cause collision.
Should be noted that, first plasma chamber 102 and second plasma chamber 116 can have the border of three openings: air inlet (for example, first gas supply inlet, 122 and second gas supply inlet 124), to the opening of high vacuum region (for example, SS 112 and fairlead 120) and public boundary hole 114 and 117, it forms HW highway respectively between first and second plasma chambers 102 and 104.Preferably, owing to will discuss hereinafter, compare with the hole 112 and 120 that enters high vacuum region (that is, the first plasma lumen pore 112 and the second plasma lumen pore 120), public boundary hole 114 and 117 area maintenance are very little.
In exemplary ion source configuration according to the present invention, ion source of the present invention comprises the (AxcelisTechnologies of Axcelis Tech Inc. by Beverly city, state, Massachusetts (MA), Inc) the ionogenic parts of standard I HC of the described type of making and selling, wherein the ion source plasma chamber comprises standard arc chamber, extraction system and the source supply pipe that is configured with standard anode.The cathode element that is inner heated in standard I HC source is removed and is mounted its locational little electron source plasma chamber and substitutes, this little electron source plasma chamber comprises the similar parts of standard I HC ion source to the described type of being made and being sold by Axcelis Technologies, and it comprises the cathode element and the source supply pipe of arc chamber, the inner heating of standard.
Two also total magnetic fields along the fairlead orientation of plasma chamber, this magnetic field is provided by standard A xcelis source magnet, is used reference marker 130 to represent.As everyone knows, by responding to vertical magnetic field in the plasma generation chamber, ionization process (and electron production process) in this case becomes more effective.In like manner, in a preferred embodiment, electromagnetic component 130 along the axis on the total border between first and second plasma chambers 102 and 116, is set to the outside of first and second plasma chambers 102 and 116 by preferably respectively.Described electromagnetic component 130 induces the magnetic field of trapped electrons, to improve the efficient of ionization process.
Thermal insulation is also preferably carried out by the insulating component 126 that is provided with in electron source chamber 102 and ion source plasma chamber 116 between them, the unique power that is coupled to ion source plasma chamber 116 is radiant power in a small amount, this radiant power in a small amount is usually on the magnitude of 10W, by providing by negative electrode 108 by 114,117 formed public boundary holes, hole, with be injected into ion source plasma chamber 166 in the relevant discharge power of electronic current, 10W normally for the discharge of decaborane or 18 borines.The low amount power that is coupled to ion source plasma chamber 116 is convenient to keep wall temperature enough low, thereby prevents the decomposition of big molecular gas.Electron source chamber 102 is by insulating component 126 and ion source plasma chamber 116 electric insulations.
In a preferred embodiment, ion source plasma chamber 116 is configured with fairlead 120, and the area of this fairlead 120 is about 300mm
2(5mm * 60mm).It is 300mm that electron source chamber 102 also is configured with the gross area
2SS 112.Hole 114 and the 117 formed public boundary holes total by two plasma chambers preferably have at 30mm
2(the area on 4 * 7.5mm) magnitudes.In this configuration, when using argon gas body source that is coupled to electron source plasma chamber 102 and the decaborane that is coupled to ion source plasma chamber 116 or 18 borane gases sources to operate, obtain the ion beam current of drawing of about 5mA easily by fairlead 120.Under these conditions, argon gas discharging electric current in electron source chamber 102 and voltage (usually on the magnitude of 0.2A@40v) produce the electronic current (and the voltage on the substrate bias electric power feedway 115 is set at 100V) that is injected into the 0.1A in the ion source plasma chamber 116.In identical physical configuration, when in ion source plasma chamber 116, switching to hydrogen phosphide as gas source, electron source plasma discharge parameter is increased to is increased to 3A when 5A@60V makes the electronic current that is injected in the ion source plasma be set at 120V on the bias voltage feedway, the ion beam current that wherein surpasses 50mA is drawn by fairlead 120.
As noted earlier, preferably, compare with the public boundary hole that is produced by hole 114 and 117, the area of electron source plasma chamber SS 112 and ion source plasma chamber SS 120 is chosen to very big, this can cause having relative higher gas purity in each chamber 102 and 116.With reference to above-mentioned example, argon gas passes through 30mm
2Public fairlead 114 flow into ion source plasma chambeies 116 and pass through 300mm
2Fairlead 120 flow out.As a result, the argon gas density in ion source plasma chamber 116 only be in the electron source plasma chamber 102 argon gas density 10%.According to same reasoning, the density that is supplied to second gas (it can flow in the electron source plasma chamber 102) in ion source plasma chamber 116 by gas supply line 118 only is 10% of second gas density in the ion source plasma chamber 116.In the typical case used, argon gas density in the electron source plasma chamber 102 and second gas density in the ion source plasma chamber 116 made each plasma chamber gas have 90% purity about equally.
Because aforementioned ion source hardware configuration, the present inventor recognizes that the electronics that is used to from first plasma chamber 102 forms the molecular ion kind (as decaborane (B in second plasma chamber 116
10H
14) or 18 borine (B
18H
12) ion), for example can avoid the typical ion source pollution problem relevant with negative electrode, the power consumption attribute of simultaneously such hardware can be realized the high electronic current ionization application that the electronic current ionization of the wide region that (enable) is typically relevant with molecular species ionization is used and typically is correlated with monomeric species ionization.
As shown in Figure 3, the method according to this invention 200 starts from step 202, it is supplied to first plasma chamber 102 (referring to Fig. 1) that is under the vacuum condition by gas supply line 106 with first gas, and second gas is supplied to second plasma chamber 116 (referring to Fig. 1) that also is in vacuum state by the second gas source supply line 118.For example, ion source 100 (Fig. 1) comprises first plasma chamber 102, and this first plasma chamber 102 comprises first gas, and is configured with the plasma generation parts 104 (Fig. 1) that are used for producing from first gas plasma.
In step 204, plasma generation parts 104 (referring to Fig. 1) are energized, and produce plasma with the interaction by plasma generation parts 104 and the first source gas (for example, argon gas) in first plasma chamber 102 (referring to Fig. 1).For example, can be that 0.4 milliampere, discharge voltage are that 60 volts direct-current discharge produces plasma with discharging current.In step 206, electronics is drawn from the plasma that produces first plasma chamber 102 (referring to Fig. 1), and quilt is by being expelled in second plasma chamber 116 (referring to Fig. 1) by hole 114 that forms in first and second plasma chambers 102 and 116 and 117 formed public boundary zones respectively, thereby allow between them, to have fluid and be communicated with (fluid that for example, comprises electronics, ion and plasma).In step 208, second gas that is arranged in second plasma chamber 116 that is supplied to by gas line 118 is by the electronic impact of drawing from first plasma chamber 102 (referring to Fig. 1), thereby forms second plasma in second plasma chamber 116 (referring to Fig. 1).At last, from the plasma of second plasma chamber 116 (referring to Fig. 1), drawn by fairlead 120 (Fig. 1) at step 210 ion.
Therefore, the present invention is described " double-plasma ion source ".Should be appreciated that described such double-plasma ion source is in order to use in the ion implant systems that can be integrated into shown in the exemplary ion injected system 300 of Fig. 4.Ion implantation device 300 (being also referred to as ion implantor) operationally is coupled to controller 302, and described controller 302 is used to be controlled at various operations and the process of being implemented on the ion implantation device 300.According to the present invention, ion implantation device 300 comprises that mentioned above being used to produces the double-plasma ion source assembly 306 of a certain amount of ion, described a certain amount of ion is used to produce the ion beam 308 of advancing along ion beam path P, ion is injected in the workpiece 310 (for example, semiconductor workpiece, display floater etc.) that is maintained on the workpiece support platform 312.Described ion can be by the inert gas of for example argon gas (Ar) and xenon (Xe); Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) and hydrogen phosphide (PH
3) the standard ionomer injecting gas; Oxygen (O for example
2) and Nitrogen trifluoride (NF
3) active gases; And decaborane (B for example
10H
14) and 18 borine (B
18H
22) big molecular gas form.
Ion source component 306 (for example comprises first plasma chamber 314, plasma chamber or arc chamber) and second plasma chamber 316, wherein first plasma chamber 314 is configured with plasma generation parts 318, this plasma production part 318 can comprise negative electrode 108 (referring to Fig. 2) and anode 110 (referring to Fig. 2), be used for producing plasma by first gas that is introduced in first plasma chamber 314 by the first gas supply line 322 of first gas supply device 301.For example, plasma generation parts 318 can comprise radio frequency (RF) induction coil in alternative selection.First gas can comprise at least a in following: the inert gas of argon gas (Ar) and xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) and hydrogen phosphide (PH
3) the standard ionomer injecting gas; Oxygen (O for example
2) and Nitrogen trifluoride (NF
3) active gases.
Ion implant systems 300 also comprises the extraction electrode assembly 331 relevant with source component 306, and wherein extraction electrode assembly 331 is biased, is used for drawing by fairlead from the charged ion of source component 306 attracting.Wire harness assembly 336 also is set at the downstream of ion source component 306, and wherein wire harness assembly 336 receives the charged ion from described source 306 usually.For example, wire harness assembly 336 comprises bundle guiding device (beam guide) 342, quality analysis apparatus 338 and differentiates hole 340 that wherein wire harness assembly 336 is exercisable, to transport ion along ion beam path P, is used for injecting workpiece 310.
For example, quality analysis apparatus 338 also comprises a production part (for example magnet that does not show), wherein quality analysis apparatus 338 provides the magnetic field that strides across ion beam 308 usually, thus according to 306 ions of drawing are relevant from the source charge-mass ratio with the trajectory deflection that changes ion from ion beam 308.For example, the ion of advancing by magnetic field stands a kind of power, and described power has the single ion of charge-mass ratio of expectation and ion that deflection has the charge-mass ratio of not expecting away from beam path P along beam path P guiding.If by quality analysis apparatus 338, ion beam 308 is conducted through and differentiates hole 340 so, and wherein ion beam 308 can be accelerated, slows down, focuses on or otherwise make amendment, and is used for being injected into the workpiece 310 that is arranged in the terminal workstation 344.
Though invention has been described about specific preferred embodiment, obviously after those skilled in the art read and understood specification of the present invention and accompanying drawing, may substitute and revise with meeting is expected being equal to.Especially, about the various functions of carrying out by above-mentioned parts (assembly, device, circuit etc.), unless indicated in addition, the term (comprising mentioning " device ") that is used to describe these parts is will be corresponding to any parts of the specific function of carrying out described parts (promptly, functional equivalent), even be not equal to the structure that is disclosed of carrying out the function in the exemplary embodiment that illustrates herein of the present invention on the structure.In addition, though for one among several embodiment special characteristic of the present invention is disclosed only, as for any specific application may be the expectation with favourable, such feature can combine with the one or more further feature of other embodiment.
Claims (25)
1. ion source, described ion source comprises:
First plasma chamber, described first plasma chamber comprises the plasma generation parts and is used to receive first air inlet of first gas, so that described plasma generation parts and described first gas interact to produce first plasma in described first plasma chamber, wherein said first plasma chamber also defines the hole that is used for drawing from described first plasma electronics; With
Second plasma chamber, described second plasma chamber comprises second air inlet that is used to receive second gas, wherein said second plasma chamber also define aim at the hole of described first plasma chamber in fact be used to receive hole from the electronics of wherein drawing, so that described electronics and described second gas interact, to produce second plasma in described second plasma chamber, described second plasma chamber also defines the fairlead that is used for drawing from described second plasma ion.
2. ion source according to claim 1, wherein said first plasma chamber also defines the SS that is used to form the path that enters high vacuum region, the area size of wherein said SS greater than be used for from the relevant area size in hole that described first plasma is drawn electronics.
3. ion source according to claim 1, wherein said plasma generation parts comprise negative electrode and anode.
4. ion source according to claim 1, wherein said plasma generation parts comprise radio-frequency antenna.
5. ion source according to claim 1, also comprise the substrate bias electric power feedway, described substrate bias electric power feedway is used for producing relative voltage difference between described first plasma chamber and second plasma chamber, to realize that described derivative electronics is transported to described second plasma chamber from described first plasma chamber.
6. ion source according to claim 1, wherein said first gas comprise at least a in following:
The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) or hydrogen phosphide (PH
3) the standard ionomer injecting gas; Or Nitrogen trifluoride (NF for example
3) or oxygen (O
2) active gases.
7. ion source according to claim 1, wherein said second gas comprise at least a in following:
The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) or hydrogen phosphide (PH
3) the standard ionomer injecting gas; Nitrogen trifluoride (NF for example
3) or oxygen (O
2) active gases; Or decaborane (B for example
10H
14) or 18 borine (B
18H
22) big molecular gas.
8. ion source according to claim 1 also comprises the extraction electrode assembly relevant with described fairlead, and wherein said extraction electrode assembly is exercisable to draw ion from described ion source, is generally used for forming ion beam.
9. method that is used for producing ion at ion source, described method comprises step:
In first plasma chamber, produce first plasma;
By the hole that is limited by described first plasma chamber, draw electronics from described first plasma;
Described derivative electronic guide in described second plasma chamber, is used for producing second plasma at described second plasma chamber; With
By the fairlead that is limited by described second plasma chamber, draw ion from described second plasma.
10. method according to claim 9, wherein said step of drawing electronics are subjected to the effect of the voltage difference between described first plasma chamber and described second plasma chamber.
11. an ion implant systems that comprises ion source (100), described ion implant systems comprises:
First plasma chamber (102), described first plasma chamber (102) comprises plasma generation parts (104) and is used to receive first air inlet (122) of first gas, so that described plasma generation parts (104) interact with described first gas, to produce first plasma in described first plasma chamber (102), wherein said first plasma chamber (102) also defines the hole (114) that is used for drawing from described first plasma electronics; With
Second plasma chamber (116), described second plasma chamber (116) comprises second air inlet (124) that is used to receive second gas, wherein said second plasma chamber (116) also defines with hole (114) fluid of described first plasma chamber (102) and is communicated with, be used to receive hole (117) from the electronics of wherein drawing, so that described electronics and described second gas interact, to produce second plasma in described second plasma chamber (116), described second plasma chamber (116) also defines the fairlead (120) that is used for drawing from described second plasma ion.
12. ion source according to claim 11, wherein said first plasma chamber also defines the SS that is used to form the path that enters high vacuum region, the area size of wherein said SS greater than be used for from the relevant area size in hole that described first plasma is drawn electronics.
13. ion source according to claim 11, wherein said plasma generation parts comprise cathode heater and anode.
14. ion source according to claim 11, wherein said plasma generation parts comprise radio-frequency antenna.
15. ion source according to claim 11, also comprise the substrate bias electric power feedway, described substrate bias electric power feedway is used for producing relative voltage difference between described first plasma chamber and second plasma chamber, to realize that described derivative electronics is transported to described second plasma chamber from described first plasma chamber.
16. ion source according to claim 11, wherein said first gas comprise at least a in following:
The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) or hydrogen phosphide (PH
3) the standard ionomer injecting gas; Or Nitrogen trifluoride (NF for example
3) or oxygen (O
2) active gases.
17. ion source according to claim 11, wherein said second gas comprise at least a in following:
The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) or hydrogen phosphide (PH
3) the standard ionomer injecting gas; Nitrogen trifluoride (NF for example
3) or oxygen (O
2) active gases; Or decaborane (B for example
10H
14) or 18 borine (B
18H
22) big molecular gas.
18. ion source according to claim 11 also comprises the draw equipment relevant with described fairlead, the wherein said equipment of drawing is exercisable to draw ion from described ion source, is generally used for forming ion beam.
19. an ion implant systems, described ion implant systems comprises:
Be used to produce the double-plasma ion source of ion beam;
Wire harness assembly, described wire harness assembly comprise and are used to receive from described ionogenic described ion beam and quality analysis apparatus through the ion beam of quality analysis is provided that described ion beam through quality analysis comprises the ion of the mass-energy scope with expectation;
Differentiate the hole, described resolution hole is used to revise described beam characteristics, and described beam characteristics comprises acceleration, deceleration and focusing; With
Terminal workstation, described terminal workstation are arranged to described ion beam injects workpiece.
20. ion implant systems according to claim 19, wherein ion source (100) comprising:
First plasma chamber (102), described first plasma chamber (102) comprises plasma generation parts (104) and is used to receive first air inlet (122) of first gas, so that described plasma generation parts (104) interact with described first gas, to produce first plasma in described first plasma chamber (102), wherein said first plasma chamber (102) also defines the hole (114) that is used for drawing from described first plasma electronics; With
Second plasma chamber (116), described second plasma chamber (116) comprises second air inlet (118) that is used to receive second gas, wherein said second plasma chamber (116) also defines to be aimed at the hole (112) of described first plasma chamber (102) in fact, be used to receive hole (117) from the electronics of wherein drawing, so that described electronics and described second gas interact, to produce second plasma in described second plasma chamber (116), described second plasma chamber (116) also defines the fairlead (120) that is used for drawing from described second plasma ion.
21. ion implant systems according to claim 20, wherein said ionogenic first gas comprise at least a in following:
The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) or hydrogen phosphide (PH
3) the standard ionomer injecting gas; Or Nitrogen trifluoride (NF for example
3) or oxygen (O
2) active gases.
22. ion implant systems according to claim 20, wherein said ionogenic second gas comprise at least a in following:
The inert gas of argon gas (Ar) or xenon (Xe) for example; Boron trifluoride (BF for example
3), arsenic hydride (AsH
3) or hydrogen phosphide (PH
3) the standard ionomer injecting gas; Nitrogen trifluoride (NF for example
3) or oxygen (O
2) active gases; Or decaborane (B for example
10H
14) or 18 borine (B
18H
22) big molecular gas.
23. ion implant systems according to claim 19, wherein ion source (100) also comprises the draw equipment relevant with described fairlead (120), the wherein said equipment of drawing is exercisable to draw ion from described ion source (100), is generally used for forming ion beam.
24. ion implant systems according to claim 19, wherein said ion source (100) also comprises the substrate bias electric power feedway, described substrate bias electric power feedway is used for producing relative voltage difference between described first plasma chamber (102) and second plasma chamber (116), to realize that described derivative electronics is transported to described second plasma chamber (116) from described first plasma chamber (102).
25. ion implant systems according to claim 19, wherein said ion source (100) also comprises plasma generation parts (104), and described plasma generation parts (104) comprise cathode heater silk, anode and radio-frequency antenna.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98157607P | 2007-10-22 | 2007-10-22 | |
| US60/981,576 | 2007-10-22 | ||
| PCT/US2008/012008 WO2009054966A1 (en) | 2007-10-22 | 2008-10-22 | Double plasma ion source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101903970A true CN101903970A (en) | 2010-12-01 |
Family
ID=40263322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801219714A Pending CN101903970A (en) | 2007-10-22 | 2008-10-22 | Double plasma ion source |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2203928A1 (en) |
| JP (1) | JP5524070B2 (en) |
| KR (1) | KR101562785B1 (en) |
| CN (1) | CN101903970A (en) |
| WO (1) | WO2009054966A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300758A (en) * | 2018-09-27 | 2019-02-01 | 德淮半导体有限公司 | Ion Implantation Equipment and ion source generating device |
| CN112313774A (en) * | 2018-04-20 | 2021-02-02 | 珀金埃尔默健康科学加拿大股份有限公司 | Mass analyzers including ion sources and reaction cells and systems and methods for using them |
| CN115305436A (en) * | 2022-08-05 | 2022-11-08 | 清华大学 | Ion diffusion infiltration equipment with dual plasma excitation sources and design method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9627180B2 (en) | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290629A (en) * | 1985-06-18 | 1986-12-20 | Rikagaku Kenkyusho | Electron beam excited ion source |
| KR900003310B1 (en) * | 1986-05-27 | 1990-05-14 | 리가가구 겡큐소 | Ion generator |
| US4841197A (en) * | 1986-05-28 | 1989-06-20 | Nihon Shinku Gijutsu Kabushiki Kaisha | Double-chamber ion source |
| JPH088072B2 (en) * | 1986-07-03 | 1996-01-29 | 日本真空技術株式会社 | Ion source |
| JPH0752635B2 (en) * | 1988-10-18 | 1995-06-05 | 日新電機株式会社 | Ion source device |
| US5252892A (en) * | 1989-02-16 | 1993-10-12 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2819420B2 (en) | 1989-11-20 | 1998-10-30 | 東京エレクトロン株式会社 | Ion source |
| JPH06176724A (en) * | 1992-01-23 | 1994-06-24 | Tokyo Electron Ltd | Ion source device |
| KR0158234B1 (en) * | 1992-03-02 | 1999-02-18 | 이노우에 아키라 | Ion implantation system |
| US5661308A (en) * | 1996-05-30 | 1997-08-26 | Eaton Corporation | Method and apparatus for ion formation in an ion implanter |
-
2008
- 2008-10-22 JP JP2010531026A patent/JP5524070B2/en active Active
- 2008-10-22 EP EP08842593A patent/EP2203928A1/en not_active Withdrawn
- 2008-10-22 WO PCT/US2008/012008 patent/WO2009054966A1/en active Application Filing
- 2008-10-22 CN CN2008801219714A patent/CN101903970A/en active Pending
- 2008-10-22 KR KR1020107011288A patent/KR101562785B1/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112313774A (en) * | 2018-04-20 | 2021-02-02 | 珀金埃尔默健康科学加拿大股份有限公司 | Mass analyzers including ion sources and reaction cells and systems and methods for using them |
| CN112313774B (en) * | 2018-04-20 | 2022-04-08 | 珀金埃尔默健康科学加拿大股份有限公司 | Mass analyzers including ion sources and reaction cells and systems and methods for using the same |
| CN109300758A (en) * | 2018-09-27 | 2019-02-01 | 德淮半导体有限公司 | Ion Implantation Equipment and ion source generating device |
| CN115305436A (en) * | 2022-08-05 | 2022-11-08 | 清华大学 | Ion diffusion infiltration equipment with dual plasma excitation sources and design method thereof |
| CN115305436B (en) * | 2022-08-05 | 2024-01-16 | 清华大学 | Ion diffusion equipment with double plasma excitation sources and design method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101562785B1 (en) | 2015-10-23 |
| KR20100100823A (en) | 2010-09-15 |
| JP2011501382A (en) | 2011-01-06 |
| EP2203928A1 (en) | 2010-07-07 |
| JP5524070B2 (en) | 2014-06-18 |
| WO2009054966A1 (en) | 2009-04-30 |
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Application publication date: 20101201 |