CN101901806B - AC-DC conversion integration component and integrated circuit using the component - Google Patents

Abstract

The present invention provides an AC/DC conversion integration element and an integrated circuit using the element. The integrated circuit includes: a DC low voltage circuit; and an AC/DC conversion integration element coupled to the DC low voltage circuit, the AC/DC conversion integration element includes four diodes, wherein the cathode of the first diode is connected to the anode of the second diode, the first connection node receives an input of an AC voltage, the cathode of the third diode is connected to the anode of the fourth diode, the second connection node receives another input of the AC voltage, the anode of the first diode is connected to the anode of the third diode, the third connection node provides a low level of the DC voltage, the cathode of the second diode is connected to the cathode of the fourth diode, the fourth connection node provides a high level of the DC voltage.

Description

AC-DC conversion integration component and integrated circuit using the component

technical field

The invention relates to an AC/DC conversion integration element and an integrated circuit using the element.

Background technique

Converting alternating current to direct current and supplying it to the internal use of integrated circuits is a circuit structure often used in electronic circuits. As shown in FIG. 1 , in the prior art, a bridge rectifier circuit 10 is usually used to achieve AC-DC conversion. The bridge rectifier circuit 10 includes resistors R1 and R2 to reduce voltage, and four diodes 12, 14, 16, 18 are used to achieve the conversion. rectification. The rectified DC voltage is then stepped down by the resistor R, and the Zener diode Z is used to control the voltage upper limit after stepping down, and then supplied to the subsequent circuit 50 for use. The post-stage circuit 50 can be various circuits operating under DC low voltage (hereinafter referred to as low voltage circuit), such as optical sensor, LED control circuit and so on.

In the prior art, the bridge rectifier circuit 10 must be made with independent diode elements, and cannot be integrated with other circuit elements into an integrated circuit, which is a point to be improved.

In view of this, the present invention proposes an integrated AC/DC conversion component that can be integrated into an integrated circuit together with a low-voltage circuit, and an integrated circuit using the component.

Contents of the invention

One of the objectives of the present invention is to overcome the deficiencies and defects of the prior art, and propose an integrated AC/DC conversion component that can be integrated into an integrated circuit together with a low-voltage circuit.

Another object of the present invention is to provide an integrated circuit using an AC-DC conversion integrated element.

In order to achieve the above purpose, from one viewpoint, the present invention provides an AC/DC conversion integrated component, comprising: (1) a substrate of a first conductivity type; and (2) a second conductivity type located in the substrate At least four well regions of the second conductivity type, each well region of the second conductivity type includes: (a) a high-concentration doped region of the first conductivity type located in the well region of the second conductivity type; and (b) located in the well region of the second conductivity type; The high-concentration doped region of the second conductivity type in the well region of the second conductivity type; wherein, each well region and the high-concentration doped regions of the first and second conductivity types in the well region constitute a diode, and the four wells The region constitutes four diodes, wherein the cathode of the first diode is connected to the anode of the second diode, and the first connection node receives an input of an AC voltage, and the cathode of the third diode is connected to the anode of the fourth and second diodes. The anodes of the diodes are connected, the second connection node receives another input of the AC voltage, the anode of the first diode is connected to the anode of the third diode, and the third connection node provides a DC The low level of the voltage, the cathode of the second diode is connected to the cathode of the fourth diode, and the fourth connection node provides a high level of DC voltage; and wherein, the AC-DC conversion integration element and the constant The current and low-voltage circuits are fabricated in the same integrated circuit, the first diode and the second diode are located in one area on the substrate, and the third diode and the fourth diode are located in another area on the substrate , and the AC-DC conversion integration element further includes: at least one MOS transistor disposed between the above two intervals, the gate of which receives an input of the AC voltage.

In one of the preferred implementation forms, each diode of the integrated AC-DC conversion element further includes: a lightly doped region of the first conductivity type located in the well region of the second conductivity type, and the first conductivity type The high-concentration doped region is set in the lightly doped region. In this preferred implementation form, the high-concentration doped regions of the second conduction type in the second and fourth diodes are disposed in the lightly doped regions.

In one of the preferred implementation forms, the first diode and the second diode are located in one interval, the third diode and the fourth diode are located in another interval, and the AC-DC conversion The integration device further includes: two MOS transistors disposed between the above two intervals, the gates of which are respectively coupled to the two inputs of the AC voltage.

In order to achieve the above purpose, from another point of view, the present invention provides an integrated circuit, comprising: a DC low-voltage circuit; a diode, wherein the cathode of the first diode is connected to the anode of the second diode, the first connection node receives an input of an AC voltage, the cathode of the third diode is connected to the anode of the fourth diode The anodes are connected, the second connection node receives another input of the AC voltage, the anode of the first diode is connected to the anode of the third diode, and the third connection node provides a low voltage of the DC voltage level, the cathode of the second diode is connected to the cathode of the fourth diode, and the fourth connection node provides a high level of DC voltage. In the AC-DC conversion integration element, the first diode and the second diode are located in one interval, the third diode and the fourth diode are located in another interval, and the AC-DC conversion integration element further includes: at least one MOS disposed between the above two intervals A transistor whose gate receives this AC voltage.

The above integrated circuit may further include: a resistor coupled between the AC-DC conversion integration element and the DC low voltage circuit, and a clamping circuit coupled to the DC low voltage circuit. The clamping circuit is, for example, a Zener diode.

In one of the preferred implementation forms, the first diode and the second diode are located in one interval, the third diode and the fourth diode are located in another interval, and the AC-DC conversion The integration device further includes: two MOS transistors disposed between the above two intervals, the gates of which are respectively coupled to the two inputs of the AC voltage.

The following will be described in detail through specific embodiments, so that it is easier to understand the purpose, technical content, characteristics and effects of the present invention.

Description of drawings

Fig. 1 illustrates the circuit structure of prior art;

Figure 2 illustrates how to make a diode that can be integrated with other circuits;

3 and 4 respectively show two embodiments of the present invention.

Explanation of symbols in the figure

10 bridge rectifier circuit

12, 14, 16, 18 diodes

13, 17 MOS transistors

13G, 17G Gate

20 Substrate

22 N-type well area

30 Substrate

32, 34, 36, 38 N-type well area

50 Post-stage circuit (low voltage circuit)

221 P+ high concentration doped region

222 N+ high-concentration doped region

301, 302, 321, 323, 341, 343, 361, 363, 381, 383P+ high-concentration doped regions

322, 342, 362, 382 N+ high-concentration doped regions

R, R1, R2 resistors

Z Zener diode

Detailed ways

Please refer to Figure 2, which shows an example of how to make a diode that can be integrated with other circuits. As shown in the figure, the present invention sets an N-type well region 22 in the P-type substrate 20, and sets a P+ high-concentration doped region 221 and an N+ high-concentration doped region 222 in the N-type well region 22, respectively constituting the anode of the diode. extreme and cathode end. On the one hand, the N-type well region 22 forms a PN junction with the P+ doped region 221; The semiconductor structure of the above diodes can be modified in various ways, for example, more than one P+ or N+ high-concentration doped region 221 or 222 can be provided to facilitate the overall circuit layout or fine-tune circuit parameters (such as on-resistance, etc.).

Figure 3 shows an embodiment of the present invention. As shown in the figure, in this embodiment, the external resistors R1 and R2 are used to step down the received AC power (such as but not limited to the 110V commercial power supplied by the government) to the range that the components in the wafer can withstand, and then through the integration It is rectified by the AC-DC conversion integration element that becomes a part of the integrated circuit, and then the high and low levels VDD and VSS of the DC operating voltage required by the low-voltage circuit (post-stage circuit) 50 are generated through the resistor R step-down, and the Zener diode Z The formed clamping circuit controls the upper limit of the voltage difference between the working voltage VDD and VSS. The clamping circuit is not limited to be a Zener diode, but can be other types of clamping circuits. The feature of the present invention is that the integrated AC-DC conversion element can be integrated with the low-voltage circuit 50 in the same integrated circuit (the resistor R and the Zener diode Z can also be integrated together).

In this embodiment, the AC/DC conversion integrated component includes a P-type substrate 30, in which N-type well regions 32, 34, 36, 38 are arranged, and P+ high-concentration doped regions 321, 323 and The N+ high-concentration doped region 322 corresponds to the diode 12 in FIG. 1; the P+ high-concentration doped region 341, 343 and the N+ high-concentration doped region 342 are arranged in the N-type well region 34, corresponding to the diode 14 in FIG. 1; N P+ high-concentration doped regions 361, 363 and N+ high-concentration doped regions 362 are set in the type well region 36, corresponding to the diode 16 in FIG. 1; P+ high-concentration doped regions 381, 383 and N+ The high-concentration doped region 382 corresponds to the diode 18 in FIG. 1 . In this embodiment, each diode has two P+ high-concentration doped regions (serving as anode terminals) and one N+ high-concentration doping region (serving as cathode terminals). Substrate 30 uses P+ high-concentration doped regions 301 and 302 as contacts, corresponding to node A in FIG. Node B in 1.

The substrate 30 in the upper part of FIG. 3 and the ion implantation region therein constitute the two diodes 12, 14 in the upper half of the bridge rectifier circuit 10 in FIG. 1, while the substrate 30 in the lower part and the ion implantation region therein constitute the bridge in FIG. Two diodes 16,18 in the lower half of the formula rectifier circuit 10. The connection between these two parts should be properly arranged to avoid the formation of parasitic NPN bicarrier transistors in the N-type well region, P-type substrate, and N-type well region. If a parasitic bipolar transistor is formed, the available DC voltage or current may be limited by the conduction of the parasitic bipolar transistor and cannot be too high.

In this regard, FIG. 4 shows another embodiment of the present invention to solve the above-mentioned problems. As shown in the figure, according to the present invention, on the substrate 30, two diodes 12, 14 corresponding to the upper half of the bridge rectifier circuit 10, and two diodes 16 corresponding to the lower half of the bridge rectifier circuit 10 , 18, set one or several MOS transistors to solve the problem of parasitic bipolar transistors. In this embodiment, two NMOS transistors 13 and 17 are set, and the gates thereof are respectively connected to the voltage after being stepped down by the resistors R1 and R2. In other words, the two transistors will be turned on in turn, so that the ground potential of the substrate body is closer to zero voltage . For example, when the AC input at the left end is at a high voltage, the MOS transistor 17 will be turned on, so that the substrate body is connected to the AC input at the right end through the resistor R2, so the voltage is closer to zero. In this way, the effect of the parasitic BJT can be eliminated, so that the DC power (VDD and VSS) generated by the rectification circuit is more stable.

As mentioned above, the semiconductor structure of the diode can be modified in various ways. In this embodiment, a P-type lightly doped region (PDD) is provided in the N-type well region of the diode, and the anode terminal is disposed in the PDD. In the diodes 12, 16, two N-type high-concentration doped regions are set in the N-type well region as cathode terminals. In the diodes 14, 18, an N-type high-concentration doped region is also set in the PDD as the cathode terminal, and the N-type well region is connected to the voltage dropped by the resistors R1 and R2.

Compared with the prior art, the present invention can integrate most of the components in the rectifier circuit with the low-voltage circuit inside the integrated circuit, and only needs external resistors, which is obviously better.

The present invention has been described above with reference to preferred embodiments, but the above description is only for those skilled in the art to easily understand the content of the present invention, and is not intended to limit the scope of rights of the present invention. Under the same spirit of the present invention, various equivalent changes can be conceived by those skilled in the art. For example, the AC-DC conversion integration element in each embodiment is a bridge rectifier circuit as an example, but the present invention can also be applied to other types of AC-DC conversion circuits using diodes. Therefore, all the above and other equivalent changes should be included within the scope of the present invention.

Claims (12)

1. an AC-DC conversion integrated element is characterized in that, comprises:

The substrate of the first conduction kenel; And

Be positioned at least four well regions of the second conduction kenel of substrate, comprise in the well region of each second conduction kenel:

Be positioned at the high-concentration dopant district of the first conduction kenel of the second conduction kenel well region; And

Be positioned at the high-concentration dopant district of the second conduction kenel of the second conduction kenel well region;

Wherein, The high-concentration dopant district of each well region and first and second conduction kenel in it constitutes diode; Four well regions constitute four diodes, and wherein the anode of the negative electrode of first diode and second diode joins, and this first node that joins receives an input of an alternating voltage; The anode of the negative electrode of the 3rd diode and the 4th diode joins; This second node that joins receives another input of this alternating voltage, and the anode of the anode of this first diode and the 3rd diode joins, and this third phase connects the low level that node provides a direct current voltage; The negative electrode of the negative electrode of second diode and the 4th diode joins, and this 4th node that joins provides the high levle of a direct current voltage;

And wherein; A this AC-DC conversion integrated element and a direct current low-voltage circuit are made in the same integrated circuit; This first diode and second diode are positioned at the interval on this substrate; The 3rd diode and the 4th diode are positioned at another interval on this substrate, and described AC-DC conversion integrated element also comprises: be arranged at least one MOS transistor between above-mentioned two intervals, its grid receives an input of this alternating voltage.

2. AC-DC conversion integrated element as claimed in claim 1 wherein, also comprises a resistance, couples with the high levle node of this direct voltage, carries out step-down with the high levle to this direct voltage.

3 as claimed in claim 2, wherein the AC-DC converter integrated devices, further comprising a clamping circuit to limit the step-down DC voltage of the high level and the low level pressure differential between.

4. AC-DC conversion integrated element as claimed in claim 1 wherein, comprises two MOS transistors between said two intervals, its grid is imported with two of this alternating voltage respectively and coupled.

5. AC-DC conversion integrated element as claimed in claim 1 wherein, also comprises in each diode: be positioned at the shallow doped region of the first conduction kenel of the second conduction kenel well region, and the high-concentration dopant district of the first conduction kenel is arranged in this shallow doped region.

6. AC-DC conversion integrated element as claimed in claim 5, wherein, in the second and the 4th diode, the high-concentration dopant district of the second conduction kenel is arranged in this shallow doped region.

7. AC-DC conversion integrated element as claimed in claim 1, wherein, this first conduction kenel is the P type, the second conduction kenel is the N type.

8. an integrated circuit is characterized in that, comprises:

One direct current low-voltage circuit; And

With the AC-DC conversion integrated element that this dc low-voltage circuit couples, this AC-DC conversion integrated element comprises four diodes, and wherein the anode of the negative electrode of first diode and second diode joins; This first node that joins receives an input of an alternating voltage; The anode of the negative electrode of the 3rd diode and the 4th diode joins, and this second node that joins receives another input of this alternating voltage, and the anode of the anode of this first diode and the 3rd diode joins; This third phase connects the low level that node provides a direct current voltage; The negative electrode of the negative electrode of second diode and the 4th diode joins, and this 4th node that joins provides the high levle of a direct current voltage, in this AC-DC conversion integrated element; This first diode and second diode are positioned at an interval; The 3rd diode and the 4th diode are positioned at another interval, and described AC-DC conversion integrated element also comprises: be arranged at least one MOS transistor between above-mentioned two intervals, its grid receives this alternating voltage.

9. integrated circuit as claimed in claim 8, wherein, this first node and second node that joins that joins respectively couples an alternating-current voltage source through a resistance.

10. integrated circuit as claimed in claim 8 wherein, also comprises: be coupled to the resistance between this AC-DC conversion integrated element and this dc low-voltage circuit.

As claimed in claim 8, wherein the integrated circuit, further comprising: the DC voltage circuit is coupled to the clamp circuit.

12. integrated circuit as claimed in claim 8 wherein, comprises two MOS transistors between said two intervals, its grid is imported with two of this alternating voltage respectively and is coupled.

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