CN101901749B - Method for reducing generation of electric arcs in wafer processing procedure - Google Patents
Method for reducing generation of electric arcs in wafer processing procedure Download PDFInfo
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- CN101901749B CN101901749B CN2009100521883A CN200910052188A CN101901749B CN 101901749 B CN101901749 B CN 101901749B CN 2009100521883 A CN2009100521883 A CN 2009100521883A CN 200910052188 A CN200910052188 A CN 200910052188A CN 101901749 B CN101901749 B CN 101901749B
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Abstract
The invention discloses a method for reducing generation of electric arcs in the wafer processing procedure, which comprises the following steps: taking a wafer, and putting the wafer on a heating disk of a reaction chamber by utilizing a robot, wherein the radius of the wafer is greater than the radius of the heating disk; depositing a film of which the color is different from the color of the wafer on the surface of the wafer; measuring the width of the film deposited on the wafer arranged on one surface of the heating disk in at least four radial directions, wherein the four radial directions are sequentially perpendicular; and controlling the motion of the robot according to the difference of the film width in the radial directions of 180 degrees. Thus, the handoff position of the robot is adjusted according to the film forming condition on the back surface of the wafer, thereby solving the problem that the handoff position can not be adjusted easily, which puzzles the technical personnel for a long time. Meanwhile, by using the method for adjusting the handoff position, the alignment degree of the center of the wafer and the center of the heating disk can be improved, thereby reducing the generation of electric arcs and improving the yield of semiconductor products.
Description
Technical field
The present invention relates to the processing method of semiconductor wafer, particularly relate to and reduce the method that electric arc produces in the semiconductor wafer treatment process.
Background technology
In semiconductor wafer treatment process, usually relate to etching technics and film forming film-forming process of wafer being carried out microfabrication etc.In these treatment process, usually run into electric arc and produce and cause the wafer quality to descend, even the appearance of problem such as scrap.
For example, in the physical vapor deposition (PVD) process, just usually in the metallic film forming process, produce electric arc, and cause the wafer quality to descend, even scrap.According to existing experience, can electric arc be summarized as two kinds: a kind of is target level electric arc (Target Arcing), and another kind is wafer scale electric arc (Wafer LevelingArcing).Particularly, the generation of target level electric arc is relevant with target, when promptly around the second-rate or target pollutant being arranged when target; Just be easy to produce target level electric arc, because in this case, the target lattice is inhomogeneous; And then cause electric field different, occur sparking, thereby produce electric arc.And the generation of wafer scale electric arc is relevant with wafer, and is detailed: the heating plate center need with the reative cell centrally aligned, when producing certain deviation, will cause the generation of electric arc; This factor can be controlled in prevention and maintain (PM).In addition, center wafer need with the heating plate centrally aligned, otherwise also will cause electric arc to produce.And wafer often utilizes manipulator (robot) to send on the heating plate of reative cell; Because wafer places changing on the hand (handoff) of manipulator; So after wafer is sent into reative cell; Change the center need of hand and the centrally aligned of heating plate, could guarantee the center of wafer and the centrally aligned of heating plate like this.Yet this factor is difficult to control in practical operation.Because a manipulator need be responsible for sending sheet to a plurality of reative cells; And the temperature in the reative cell often is higher than room temperature; Cause manipulator to expand with heat and contract with cold, so the centrally aligned situation in the current reative cell receives the temperature effect of reative cell before, and this influence of thermal effect is difficult to control.So aspect the control of wafer scale electric arc, brought a lot of puzzlements to the technical staff.
Summary of the invention
Technical problem to be solved by this invention is to reduce the generation of wafer scale electric arc (WaferLevelingArcing) in the wafer processing procedure.
For solving above technical problem, the present invention provides a kind of method that electric arc produces in the wafer processing procedure that reduces, and comprising: get wafer, utilize manipulator this wafer to be placed on the heating plate of reative cell, wherein this wafer radii is greater than said heating plate radius; At the wafer surface deposition film different with the wafer color; Measure the width of at least four films that deposited in the radial direction on the one side that wafer places heating plate, wherein said four radial direction become 90 degree successively; The difference of utilizing into the thin-film width in the radial direction of 180 degree is controlled the motion of said manipulator.
Further, said four radial direction comprise: 12 o'clock direction, 3 o'clock direction, 6 o'clock direction and 9 o'clock direction, and utilize 12 o'clock direction and 6 o'clock direction upper film width difference control the flexible of said manipulator; Utilize 3 o'clock direction and 9 o'clock direction upper film width difference control the rotation of said manipulator.
Further, said film is the aluminium film.
Further, under hot conditions, the thickness of institute's deposition of aluminum film is not less than 2,000 dusts.
Further, at ambient temperature, the thickness of institute's deposition of aluminum film is not less than 5,000 dusts.
Further, said film is a W film.
Further, the thickness of said W film is not less than 3,000 dusts.
It is thus clear that what the present invention utilized that the film forming situation of chip back surface adjusts manipulator (robot) changes hand (handoff) position, solved the puzzlement technical staff for a long time change the problem that hand position is difficult to regulate.Simultaneously, utilize this method to change the hand adjustment joint, can improve the degree of registration at center wafer and heating plate center, and then reduce the generation of electric arc, improve the yield of semiconductor product.
Description of drawings
Fig. 1 is the structural representation in the reative cell in the wafer processing procedure;
Fig. 2 is the enlarged diagram in the circle A scope among Fig. 1;
Fig. 3 is the schematic flow sheet of the method for the minimizing electric arc generation that one embodiment of the invention provided;
Fig. 4 is the schematic rear view of used wafer in the embodiment of the invention.
Embodiment
For making technical characterictic of the present invention more obviously understandable,, the present invention is done further description below in conjunction with accompanying drawing and embodiment.
In background technology, mentioned in prevention and maintain (PM), can adjust the relative position at heating plate center and reative cell center, thereby they are aimed at as much as possible, to reduce the generation of electric arc in the subsequent wafer processing procedure.And after prevention and maintain; Relative position between the center of the adjusting of changing hand (handoff) of manipulator (robot), the center of wafer and heating plate is regulated and often is difficult to control; Following examples propose a kind of method of regulating robot movement just to this situation, make change hand entering reative cell after; Its center is aimed at the center of heating plate as much as possible, further reduces the generation of electric arc in the wafer processing procedure.
Please refer to Fig. 1 and Fig. 2, wherein Fig. 1 is the structural representation in the reative cell in the wafer processing procedure, and Fig. 2 is the enlarged diagram in the circle A scope among Fig. 1.As shown in the figure, wafer 10 places on the heating plate 20 in the reative cell.Wherein, the radius of wafer is 150mm; And the surface radii of heating plate bearing wafer 10 is 145mm to about the 146mm, is example with 146mm at this; In addition, has a circle sacrifice layer 30 between wafer 10 and the heating plate 20, in order in wafer processing procedure, to consume; And protection wafer 10; The thickness of this sacrifice layer 30 is about 2mm, apart from wafer 10 back sides space that ten minutes is little is arranged, and for example is 0.009mm in the present embodiment.Therefore, probably there is the edge of 2mm to be exposed in the reative cell at wafer 10 back sides.Thereby in carrying out the plasma deposition process, wafer 10 back sides probably have the edge of 2mm to be exposed in the ion plasma, thereby also will be deposited the formation film.The technical staff fully takes into account this point; Utilize the formed film in wafer 10 back sides to adjust manipulator (robot); After making that manipulator is sent wafer into reative cell, can adjust the position of its center of changing hand, and then make that changing the hand center aims at heating plate as far as possible in the heating plate top; Guarantee the center of wafer and the centrally aligned of heating plate, thereby reduce the generation of electric arc.
Specifically, please merge the schematic flow sheet of the method that the minimizing electric arc that it shows one embodiment of the invention provides produces with reference to figure 3.As shown in the figure, this method comprises the steps:
S1: get wafer 10, utilize manipulator that this wafer 10 is placed on the heating plate 20 of reative cell, wherein the radius of wafer 10 is greater than the radius of heating plate 20;
S2: at the wafer 10 surface depositions film different with the wafer color;
S3: measure the width of at least four films that deposited in the radial direction on the one side (being the back side) that wafer 10 places heating plate 20, wherein said four radial direction become 90 degree successively;
S4: the difference of utilizing into the thin-film width in the radial direction of 180 degree is controlled the motion of manipulator.
In detail, after accomplishing prevention and maintain, get a test with wafer 10; Be placed on the changing on the hand of manipulator; Then utilize manipulator that it is sent into reative cell, manipulator places (step S1) on the heating plate 20 through pre-set flexible and rotation amount with wafer 10.Because the radius of wafer 10 is used for the radius on the surface of bearing wafer 10 greater than heating plate 20.For example, wafer radii is 150mm, and the radius that heating plate 20 is used for the surface of bearing wafer 10 is 146mm, and simultaneously, having a circle thickness between wafer 10 and the heating plate 20 is the sacrifice layer 30 (like Fig. 1 and shown in Figure 2) about 2mm.Therefore, if under the situation of wafer 10 centers and heating plate 20 centrally aligneds, the back side of wafer 10 has the edge about 2mm to be exposed in the reative cell; And misalignment, it is exposed to outer border width and will changes to some extent.
Then, carry out step S2, promptly,, will form film simultaneously on it because the edge of the back side certain width of wafer 10 is exposed in the reative cell at the surface deposition film of wafer 10.Present embodiment is to utilize the width of the formed film in wafer 10 back sides that manipulator is regulated, and the film that therefore need be deposited is obviously visible with respect to wafer 10, and promptly the color of film and wafer color can obviously be distinguished.For example, aluminium (Al) is carried out the resulting aluminium film of plasma deposition for silvery white, and wafer is a Dark grey, so just can be clearly seen that the wafer 10 back exposure aluminium film that the edge deposited outside, and then is convenient for measuring its width.Same reason also can select pure tungsten (Clean-W) to carry out plasma deposition, to form W film.In addition, repeatedly test discovery through the inventor, the thickness of the film that wafer 10 back sides are deposited preferably reaches certain requirement.Particularly: under hot conditions, the thickness of aluminium film is not less than 2,000 dusts; At ambient temperature, the thickness of aluminium film is not less than 5,000 dusts.And the thickness of W film is not less than 3,000 dusts.
Then, carry out step S3, promptly measure the width of at least four films that deposited in the radial direction on wafer 10 back sides.Please refer to Fig. 4, in the present invention's one preferred embodiment, these four radial direction be followed successively by 12 o'clock direction, 3 o'clock direction, 6 o'clock direction and 9 o'clock direction.Through the width that measures 12 o'clock direction is D1mm, 3 o'clock the width of direction be D2mm, 6 o'clock the width of direction be D3mm, 9 o'clock the width of direction be D4mm.
Then carry out step S4, the difference of promptly utilizing into the thin-film width in the radial direction of 180 degree is controlled the motion of manipulator.Be example then with the preferred embodiment among the step S3, utilize 12 o'clock direction with the stretching of difference control manipulator of 6 o'clock direction upper film width; And utilize 3 o'clock direction and 9 o'clock direction upper film width the rotation of difference control manipulator.For example; If the step rate of the stepper (step motor) of control manipulator is per 200 steps to be 1mm; Then manipulator required adjustment step number on flexible direction is (| D1-D3|/2) * 200, and the step number of required adjustment is (| D2-D4|/2) * 200 on direction of rotation.Certainly, be merely for example, those skilled in the art can point out in view of the above here, in practical operation, select more or different radial direction is measured and adjusted, and the present invention is not as limit.
So, just can be after the changing hand (handoff) and get into reative cell of manipulator, continue its position of heating plate top the most finally of adjustment; With respect to prior art; The center of changing hand and the center of heating plate are in aiming at adjustment process, and be more accurate, and then make the alignment case at center wafer and heating plate center be greatly improved; Reduce the probability that electric arc produces, improved the yield of semiconductor product.
More than being merely for example, is not that protection scope of the present invention should be as the criterion with the scope that claims are contained in order to qualification the present invention.
Claims (6)
1. one kind is reduced the method that electric arc produces in the wafer processing procedure, comprising:
Get wafer, utilize manipulator this wafer to be placed on the heating plate of reative cell, wherein this wafer radii is greater than said heating plate radius;
At the wafer surface deposition film different with the wafer color;
Measure the width of at least four films that deposited in the radial direction on the one side that wafer places heating plate, wherein said four radial direction become 90 degree successively;
The difference of thin-film width in the radial direction of utilizing into 180 degree is controlled the motion of said manipulator, makes the center of wafer and the centrally aligned of heating plate.
2. the method that electric arc produces in the minimizing wafer processing procedure according to claim 1 is characterized in that wherein said four radial direction comprise: 12 o'clock direction, 3 o'clock direction, 6 o'clock direction and 9 o'clock direction, and
Utilize 12 o'clock direction and 6 o'clock direction upper film width difference control the flexible of said manipulator;
Utilize 3 o'clock direction and 9 o'clock direction upper film width difference control the rotation of said manipulator.
3. the method that electric arc produces in the minimizing wafer processing procedure according to claim 1 is characterized in that said film is the aluminium film.
4. the method that electric arc produces in the minimizing wafer processing procedure according to claim 3 is characterized in that at ambient temperature, the thickness of institute's deposition of aluminum film is not less than 5,000 dusts.
5. the method that electric arc produces in the minimizing wafer processing procedure according to claim 1 is characterized in that said film is a W film.
6. the method that electric arc produces in the minimizing wafer processing procedure according to claim 5 is characterized in that the thickness of said W film is not less than 3,000 dusts.
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| CN2009100521883A CN101901749B (en) | 2009-05-27 | 2009-05-27 | Method for reducing generation of electric arcs in wafer processing procedure |
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| CN101901749B true CN101901749B (en) | 2012-08-08 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942042A (en) * | 1997-05-23 | 1999-08-24 | Applied Materials, Inc. | Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system |
| CN1359471A (en) * | 1998-08-17 | 2002-07-17 | 泰格尔公司 | Method and apparatus for minimizing semiconductor wafer arcing semiconductor wafer processing |
| CN101404245A (en) * | 2002-09-30 | 2009-04-08 | 兰姆研究有限公司 | Method for reducing wafer arcing |
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- 2009-05-27 CN CN2009100521883A patent/CN101901749B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942042A (en) * | 1997-05-23 | 1999-08-24 | Applied Materials, Inc. | Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system |
| CN1359471A (en) * | 1998-08-17 | 2002-07-17 | 泰格尔公司 | Method and apparatus for minimizing semiconductor wafer arcing semiconductor wafer processing |
| CN101404245A (en) * | 2002-09-30 | 2009-04-08 | 兰姆研究有限公司 | Method for reducing wafer arcing |
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