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CN101901576B - OLED pixel circuit - Google Patents

OLED pixel circuit Download PDF

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Publication number
CN101901576B
CN101901576B CN2010102383151A CN201010238315A CN101901576B CN 101901576 B CN101901576 B CN 101901576B CN 2010102383151 A CN2010102383151 A CN 2010102383151A CN 201010238315 A CN201010238315 A CN 201010238315A CN 101901576 B CN101901576 B CN 101901576B
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transistor
source
drain
gate
emitting diode
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CN101901576A (en
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蔡宗廷
吴元均
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AUO Corp
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AU Optronics Corp
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Abstract

The invention relates to an organic light emitting diode pixel circuit which comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a capacitor and an organic light emitting diode. One source/drain of the first transistor receives display data, a gate of the second transistor is coupled to the other source/drain of the first transistor and is coupled to one source/drain of the third transistor and one source/drain of the fourth transistor through a capacitor, one source/drain of the second transistor is coupled to the first power voltage, the other source/drain of the third transistor is coupled to the other source/drain of the second transistor, and the other source/drain of the fourth transistor receives a reference signal. The anode and the cathode of the organic light emitting diode are respectively coupled to a second power voltage and the other source/drain of the second transistor. Wherein the second power supply voltage is greater than the first power supply voltage.

Description

Organic light-emitting diode pixel circuit
Technical field
The present invention relates to a kind of technology of organic light emitting diode display, and particularly relevant for a kind of organic light-emitting diode pixel circuit.
Background technology
(Organic Light Emitting Diode, OLED) display is as display element with Organic Light Emitting Diode to Organic Light Emitting Diode.And Organic Light Emitting Diode is a kind of element that is driven by electric current, and its luminosity can change along with the electric current through Organic Light Emitting Diode.Therefore, the electric current of how controlling accurately through Organic Light Emitting Diode becomes the developing important topic of organic electroluminescence panel then.
Please with reference to Fig. 1, it is the synoptic diagram of known organic light emitting diode display.This organic light emitting diode display 100 includes scan drive circuit 110, data drive circuit 120, supply voltage supply circuit 130 and organic LED display panel 140.And organic LED display panel 140 includes multi-strip scanning line (as indicating shown in 142), many data lines (as indicating shown in 144), lead 146 and a plurality of pixels (as indicating shown in 148).Each pixel 148 is made up of transistor 148-1, electric capacity 148-2, transistor 148-3 and Organic Light Emitting Diode 148-4.Wherein, transistor 148-1 and 148-3 all realize with the N transistor npn npn, for example are all to realize with N type thin film transistor (TFT) (N-type Thin-FilmTransistor, N-type TFT).And the OVSS shown in the figure is referential supply voltage, for example is earthing potential.In general, transistor 148-1 is to be called switching transistor at such image element circuit framework, and transistor 148-3 then is to be called driving transistors at such image element circuit framework.The detailed annexation of the above member is showed in Fig. 1, just repeats no more at this.
In framework shown in Figure 1; Transistor 148-3 in each pixel 148 all receives the supply voltage OVDD that supply voltage supply circuit 130 is provided through lead 146, and the negative electrode of the Organic Light Emitting Diode 148-4 in each pixel 148 all couples referential supply voltage OVSS.And the voltage of the video data that data line 144 is transmitted will pass through the size of current of Organic Light Emitting Diode 148-4 with the common influence of the potential difference (PD) of voltage source OVDD and OVSS, controls the brightness of Organic Light Emitting Diode 148-4 whereby.
Yet, along with wearing out of Organic Light Emitting Diode 148-4, make the internal resistance of Organic Light Emitting Diode 148-4 rise, further make the cross-pressure of Organic Light Emitting Diode 148-4 rise.And the rising of the cross-pressure of Organic Light Emitting Diode 148-4 (is V with the drain electrode-source voltage that forces transistor 148-3 DS) diminish.And because the size of current through transistor 148-3 is the V with transistor 148-3 DSTherefore voltage is directly proportional, at the V of transistor 148-3 DSUnder the situation of voltage decreases, the electric current through transistor 148-3 also can diminish, and further makes the brightness step-down of Organic Light Emitting Diode 148-4.Thus, because the catabiosis of Organic Light Emitting Diode 148-4 can reduce the brightness of Organic Light Emitting Diode 148-4, cause display frame the phenomenon of brightness irregularities to occur, and this is so-called dent (Image Sticking) phenomenon.
Know that through above-mentioned this organic light-emitting diode pixel circuit shown in the pixel 148 can cause brightness to descend because of wearing out of Organic Light Emitting Diode.And same situation also occurs in the another kind of organic light-emitting diode pixel circuit in the known technology, please with reference to Fig. 2.Fig. 2 illustrates known another kind of organic light-emitting diode pixel circuit.This organic light-emitting diode pixel circuit 200 is made up of with 208 of Organic Light Emitting Diodes transistor 202 (being switching transistor), electric capacity 204, transistor 206 (being driving transistors).Wherein, Transistor 202 is also realized with a N transistor npn npn, for example is to realize that with a N type thin film transistor (TFT) transistor 206 is then realized with a P transistor npn npn; For example be to realize with a P type thin film transistor (TFT) (P-typeThin-Film Transistor, P-type TFT).And the OVDD shown in the figure is the supply voltage that supply voltage supply circuit (not illustrating) is provided.As for the OVSS shown in the figure, it is referential supply voltage, for example is earthing potential.In addition, a wherein source/drain electrode of transistor 202 is in order to couple data line (not illustrating), so that receive the video data DATA that data line transmitted.And the grid of transistor 202 is in order to couple sweep trace (not illustrating), so that the sweep signal G that received scanline transmitted n, wherein n is a natural number, and G nRepresent the sweep signal that n bar sweep trace is transmitted.
This organic light-emitting diode pixel circuit 200 is with the difference of the organic light-emitting diode pixel circuit shown in the aforementioned pixel 148; In organic light-emitting diode pixel circuit 200; Transistor 206 in order to the size of current of decision through Organic Light Emitting Diode 208 is a P transistor npn npn; And in the organic light-emitting diode pixel circuit shown in the aforementioned pixel 148, be a N transistor npn npn in order to the transistor 148-3 of the size of current of decision through Organic Light Emitting Diode 148-4.
Please continue with reference to Fig. 2, aging along with Organic Light Emitting Diode 208 makes the cross-pressure of Organic Light Emitting Diode 208 rise, and then to force the source electrode-drain voltage of transistor 206 (be V SD) diminish.And because the size of current through transistor 206 is the V with transistor 206 SDTherefore voltage is directly proportional, at the V of transistor 206 SDUnder the situation of voltage decreases, the electric current through transistor 206 also can diminish, and further makes the brightness step-down of Organic Light Emitting Diode 208.Thus, because the catabiosis of Organic Light Emitting Diode 208 can reduce the brightness of Organic Light Emitting Diode 208, cause display frame the dent phenomenon can occur equally.
Summary of the invention
The object of the invention is providing a kind of organic light-emitting diode pixel circuit exactly, and it can improve the dent phenomenon of display frame.
The present invention proposes a kind of organic light-emitting diode pixel circuit, and it includes the first transistor, electric capacity, transistor seconds, the 3rd transistor, the 4th transistor AND gate Organic Light Emitting Diode.Described the first transistor has first grid, first source/drain electrode and second source/drain electrode, and first source/drain electrode receives video data.Described electric capacity has first end and second end, and first end couples second source/drain electrode.Described transistor seconds has second grid, the 3rd source/drain electrode and the 4th source/drain electrode, and first end of second grid coupling capacitance, and the 4th source/drain electrode couples first supply voltage.Described the 3rd transistor has the 3rd grid, the 5th source/drain electrode and the 6th source/drain electrode, and second end of the 5th source/drain electrode coupling capacitance, and the 6th source/drain electrode couples the 3rd source/drain electrode.Described the 4th transistor has the 4th grid, the 7th source/drain electrode and the 8th source/drain electrode, and second end of the 7th source/drain electrode coupling capacitance, and the 8th source/drain electrode receives reference signal.As for described Organic Light Emitting Diode, its anode and negative electrode couple second source voltage and the 3rd source/drain electrode respectively.Wherein, second source voltage is greater than first supply voltage.
In a preferred embodiment of above-mentioned organic light-emitting diode pixel circuit, during writing in, the first transistor and the 3rd transistor present conducting according to its signal separately, the 4th transistor then appears according to its signal closes; In between light emission period, the first transistor and the 3rd transistor appear according to its signal separately closes, and the 4th transistor then presents conducting according to its signal.Wherein, between light emission period during writing after.
In a preferred embodiment of above-mentioned organic light-emitting diode pixel circuit, the described the 4th transistorized the 8th source/drain electrode couples second source voltage, so that second source voltage is used as aforesaid reference signal.
The present invention also proposes another kind of organic light-emitting diode pixel circuit, and it includes the first transistor, electric capacity, transistor seconds, the 3rd transistor, the 4th transistor AND gate Organic Light Emitting Diode.Described the first transistor has first grid, first source/drain electrode and second source/drain electrode, and first source/drain electrode receives video data.Described electric capacity has first end and second end, and first end couples second source/drain electrode.Described transistor seconds has second grid, the 3rd source/drain electrode and the 4th source/drain electrode, and first end of second grid coupling capacitance, and the 3rd source/drain electrode couples first supply voltage.Described the 3rd transistor has the 3rd grid, the 5th source/drain electrode and the 6th source/drain electrode, and second end of the 5th source/drain electrode coupling capacitance, and the 6th source/drain electrode couples the 3rd source/drain electrode.Described the 4th transistor has the 4th grid, the 7th source/drain electrode and the 8th source/drain electrode, and second end of the 7th source/drain electrode coupling capacitance, and the 8th source/drain electrode couples the 4th source/drain electrode.As for described Organic Light Emitting Diode, its anode and negative electrode couple the 4th source/drain electrode and second source voltage respectively.Wherein, second source voltage is less than first supply voltage.
In a preferred embodiment of above-mentioned another kind of organic light-emitting diode pixel circuit, during writing in, the first transistor and the 4th transistor present conducting according to its signal separately, the 3rd transistor then appears according to its signal closes; In between light emission period, the first transistor and the 4th transistor appear according to its signal separately closes, and the 3rd transistor then presents conducting according to its signal.Wherein, between light emission period during writing after.
The present invention further proposes another organic light-emitting diode pixel circuit again, and it includes the first transistor, electric capacity, transistor seconds, the 3rd transistor, the 4th transistor AND gate Organic Light Emitting Diode.Described the first transistor has first grid, first source/drain electrode and second source/drain electrode, and first source/drain electrode receives video data.Described electric capacity has first end and second end, and this second end couples second source/drain electrode.Described transistor seconds has second grid, the 3rd source/drain electrode and the 4th source/drain electrode, and first end of second grid coupling capacitance, and the 3rd source/drain electrode couples first supply voltage.Described the 3rd transistor has the 3rd grid, the 5th source/drain electrode and the 6th source/drain electrode, and second end of the 5th source/drain electrode coupling capacitance, and the 6th source/drain electrode couples the 4th source/drain electrode.Described the 4th transistor has the 4th grid, the 7th source/drain electrode and the 8th source/drain electrode, and first end of the 7th source/drain electrode coupling capacitance, and the 8th source/drain electrode couples the 4th source/drain electrode.As for described Organic Light Emitting Diode, its anode and negative electrode couple the 4th source/drain electrode and second source voltage respectively.Wherein, second source voltage is less than first supply voltage.
In a preferred embodiment of another above-mentioned organic light-emitting diode pixel circuit, during writing in, the first transistor and the 4th transistor present conducting according to its signal separately, the 3rd transistor then appears according to its signal closes; In between light emission period, the first transistor and the 4th transistor appear according to its signal separately closes, and the 3rd transistor then presents conducting according to its signal.Wherein, between light emission period during writing after.
The present invention adopts four transistors, an electric capacity and an Organic Light Emitting Diode to make organic light-emitting diode pixel circuit.Through the circuit characteristic that above-mentioned these members the special relation of coupling and each transistorized specific conducting sequential are produced, can make that the electric current through Organic Light Emitting Diode is directly proportional with the cross-pressure of Organic Light Emitting Diode itself.Therefore, even if Organic Light Emitting Diode is aging and make the cross-pressure of Organic Light Emitting Diode rise, the size of current through Organic Light Emitting Diode also can improve along with the rising degree of cross-pressure.In other words, the size of current through Organic Light Emitting Diode can improve along with the degree of aging of Organic Light Emitting Diode.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated by the raising of above-mentioned size of current, and then can improve the dent phenomenon of display frame.
For let above-mentioned and other purposes of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended accompanying drawing, elaborates as follows.
Description of drawings
Fig. 1 is the synoptic diagram of known organic light emitting diode display;
Fig. 2 illustrates known another kind of organic light-emitting diode pixel circuit;
Fig. 3 illustrates the organic light-emitting diode pixel circuit according to one embodiment of the invention;
Fig. 4 illustrates the signal sequence of video data, sweep signal and the inversion signal thereof of Fig. 3;
Fig. 5 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Fig. 6 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Fig. 7 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Fig. 8 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Fig. 9 illustrates the signal sequence of video data, sweep signal and the inversion signal thereof of Fig. 8;
Figure 10 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Figure 11 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Figure 12 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Figure 13 illustrates the signal sequence of video data, sweep signal and the inversion signal thereof of Figure 12;
Figure 14 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention;
Figure 15 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.
Wherein, Reference numeral
100: organic light emitting diode display 110: scan drive circuit
120: data drive circuit 130: the supply voltage supply circuit
140: organic LED display panel 142: sweep trace
144: data line 146: lead
148: pixel 148-2,204,308,806,1204: electric capacity
A, B: contact E: between light emission period
G n: sweep signal OVDD: supply voltage
OVSS: referential supply voltage DATA: video data
Vref: reference signal W: during writing
XG n: sweep signal G nInversion signal
148-4,208,306,812,1212: Organic Light Emitting Diode
148-1,148-3,202,206,302,304,310,312,802,804,808,810,1202,1206,1208,1210: transistor
200,300,500,600,700,800,1000,1100,1200,1400,1500: organic light-emitting diode pixel circuit
Embodiment
First embodiment:
Please with reference to Fig. 3, it illustrates the organic light-emitting diode pixel circuit according to one embodiment of the invention.This organic light-emitting diode pixel circuit 300 is made up of with 312 in transistor transistor 302, transistor 304, Organic Light Emitting Diode 306, electric capacity 308, transistor 310 (being driving transistors).In this example, four above-mentioned transistors are all realized with a N transistor npn npn, for example are all to realize with a N type thin film transistor (TFT).
OVDD shown in Figure 3 is the supply voltage that supply voltage supply circuit (not illustrating) is provided.And the OVSS shown in the figure, it is referential supply voltage, for example is earthing potential.Supply voltage OVDD is greater than supply voltage OVSS.In addition, a wherein source/drain electrode of transistor 302 is in order to receive video data DATA.And the grid of transistor 302 and 304 is all in order to receive sweep signal G n, wherein n is a natural number, and G nRepresent the sweep signal that n bar sweep trace is transmitted.As for the grid of transistor 312 then in order to receive sweep signal G nInversion signal XG nThe detailed annexation of the above member is showed in Fig. 3, just repeats no more at this.
Fig. 4 illustrates video data DATA, the sweep signal G of Fig. 3 nAnd inversion signal XG nSignal sequence.Please be according to the needs of explanation with reference to Fig. 3 and Fig. 4.During writing among the W, sweep signal G nBe noble potential (High), and sweep signal G nInversion signal XG nBe electronegative potential (Low).Because sweep signal G nBe noble potential, so transistor 302 and 304 is all conducting (Turn on), makes organic light-emitting diode pixel circuit 300 can receive video data DATA.And because sweep signal G nInversion signal XG nBe electronegative potential, so transistor 312 is for closing (Turn off).At this moment, the voltage swing of contact A and contact B can be represented by following formula (1) and formula (2) respectively:
V A＝V DATA ……(1)
V B＝OVDD-V OLED ……(2)
Wherein, V ABe expressed as the voltage swing of contact A, V DATABe expressed as the voltage swing of video data DATA, and V BBe expressed as the voltage swing of contact B, as for V OLEDThen be expressed as the size of the cross-pressure of Organic Light Emitting Diode 306.
Then, between light emission period among the E, sweep signal G nChange electronegative potential into by noble potential, and sweep signal G nInversion signal XG nThen change noble potential into by electronegative potential.Because sweep signal G nBe electronegative potential, so transistor 302 and 304 is all and closes, make organic light-emitting diode pixel circuit 300 can't receive video data DATA.And because sweep signal G nInversion signal XG nBe noble potential, so transistor 312 is conducting.And this moment; Because transistor 302 is closed and is made contact A present suspension joint (Floating); Make the voltage swing of contact A to do identical variation along with the variation in voltage of contact B, so the voltage swing of contact A and contact B can be represented respectively by following formula (3) and formula (4) because of the coupling effect of electric capacity 308:
V A＝V DATA+V OLED ……(3)
V B＝OVDD ……(4)
And can represent by following formula (5) through the size of current of Organic Light Emitting Diode 306:
I OLED＝K(V GS-V th) 2 ……(5)
Wherein, I OLEDBe expressed as the size of current through Organic Light Emitting Diode 306, K is expressed as a constant, V GSBe expressed as the grid-source voltage of transistor 310, and V ThBe expressed as the critical conduction voltage (Threshold Voltage) of transistor 310.
Hold above-mentioned because V GS=V A-OVSS, so can above-listed formula (5) be made into to represent with following formula (6):
I OLED＝K(V A-OVSS-V th) 2 ……(6)
Then, with in the above-listed formula of above-listed formula (3) substitution (6), just can obtain following formula (7) again:
I OLED＝K(V DATA+V OLED-OVSS-V th) 2 ……(7)
Can know I by formula (7) OLEDSize be and V OLEDSize be directly proportional.In other words, no matter how many aging cross-pressures of Organic Light Emitting Diode 306 that makes of Organic Light Emitting Diode 306 risen, and the size of current through Organic Light Emitting Diode 306 all can improve along with the rising degree of cross-pressure.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated through the raising of above-mentioned size of current, and then can improve the dent phenomenon of display frame.
Second embodiment:
Through the teaching of first embodiment, do not couple supply voltage OVDD and change into and couple a reference voltage even those of ordinary skills should be known in transistor 312 in the organic light-emitting diode pixel circuit 300, also can realize the present invention, one is as shown in Figure 5.
Fig. 5 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In Fig. 5, indicate with Fig. 3 in the identical person of sign be expressed as identical member or signal.And organic light-emitting diode pixel circuit 500 shown in Figure 5 is to operate according to signal sequence shown in Figure 4 equally.
As shown in Figure 5, transistor 312 has changed into and has coupled a reference voltage V REFSo having done a benefit, is exactly can be through changing reference voltage V REFSize and further change I OLEDCompensation rate, below will do further explanation.Among the W, the voltage swing of contact B is just like shown in the above-listed formula (2) during writing:
V B＝OVDD-V OLED ……(2)
And E between an entering light emission period, the voltage swing of contact B will be by OVDD-V OLEDChange V into REFAnd because transistor 302 is closed and made contact A present suspension joint (Floating), cause the voltage swing of contact A to do identical variation along with the variation in voltage of contact B because of the coupling effect of electric capacity 308 this moment.Therefore, through the relational expression shown in the above-listed formula (6):
I OLED＝K(V A-OVSS-V th) 2 ……(6)
Just can know I OLEDCompensation rate can be along with reference voltage V REFThe size difference and change.
And can know through above-mentioned description for this embodiment, so the transistor 312 of aforementioned organic light-emitting diode pixel circuit 300 couple supply voltage OVDD, exactly supply voltage OVDD is used as reference signal Vref and uses.
The 3rd embodiment:
Teaching through first embodiment; Even those of ordinary skills should be known in that the transistor 312 in the organic light-emitting diode pixel circuit 300 makes into to realize with a P transistor npn npn, for example be to realize with a P type thin film transistor (TFT); Also can realize the present invention, one is as shown in Figure 6.
Fig. 6 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 6 600, transistor 312 has made into to realize with a P transistor npn npn, and the grid of transistor 312 also couples sweep signal G nAnd in all the other of Fig. 6 indicate, be expressed as identical member or signal with the identical person of sign among Fig. 3.Making transistor 312 into realize with a P transistor npn npn benefit, is that organic light-emitting diode pixel circuit 600 need not use sweep signal G nInversion signal XG n, make inversion signal XG nCan omit, and organic light-emitting diode pixel circuit 600 still can be accordinged to sweep signal G shown in Figure 4 nOperate with the signal sequence of video data DATA.
Identical ground, the transistor 312 in the organic light-emitting diode pixel circuit 500 shown in Figure 5 also can make into to realize with a P transistor npn npn, just repeat no more at this.
The 4th embodiment:
Teaching through first embodiment; Those of ordinary skills should know; Even the transistor 302 and 304 in the organic light-emitting diode pixel circuit 300 all makes into to realize with a P transistor npn npn; For example be all to realize that with a P type thin film transistor (TFT) also can realize the present invention, one is as shown in Figure 7.
Fig. 7 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 7 700, transistor 302 and 304 has made into to realize with a P transistor npn npn all, and the grid of transistor 302 and 304 also all couples sweep signal G nInversion signal XG nAnd in all the other of Fig. 7 indicate, be expressed as identical member or signal with the identical person of sign among Fig. 3.All making transistor 302 and 304 into realize with a P transistor npn npn benefit, is that organic light-emitting diode pixel circuit 700 need not use sweep signal G n, make sweep signal G nCan omit, and organic light-emitting diode pixel circuit 700 still can be accordinged to sweep signal G shown in Figure 4 nInversion signal XG nOperate with the signal sequence of video data DATA.With another viewpoint, the transistor 302,304 and 312 in the organic light-emitting diode pixel circuit 700 is exactly with described inversion signal XG nBeing used as general sweep signal uses.
Identical ground, the transistor 302 and 304 in the organic light-emitting diode pixel circuit 500 shown in Figure 5 also can all make into to realize with a P transistor npn npn, just repeat no more at this.
Through the teaching of first embodiment to the, four embodiment, can summarize transistor 302,304 and the rule of 312 conducting sequential among these embodiment.That is to say no matter transistor 302,304 and 312 is to realize with the N transistor npn npn or with the P transistor npn npn, these three transistorized conducting sequential all must meet such rule.This rule declaration is following: among the W, transistor 302 presents conducting according to its signal separately with transistor 304 during writing, and transistor 312 then appears according to its signal closes; Among the E, transistor 302 appears according to its signal with transistor 304 separately closes between light emission period, and transistor 312 then presents conducting according to its signal.Wherein, between light emission period E during writing after the W.
The 5th embodiment:
Through the teaching of first embodiment, the present invention also proposes another kind of organic light-emitting diode pixel circuit, and the transistor in this organic light-emitting diode pixel circuit all realizes that with a P transistor npn npn one is as shown in Figure 8.
Fig. 8 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.This organic light-emitting diode pixel circuit 800 is made up of with 812 of Organic Light Emitting Diodes transistor 802, transistor 804, electric capacity 806, transistor 808 (being driving transistors), transistor 810.And as shown in Figure 8, these transistors are all realized with a P transistor npn npn, for example are all to realize with a P type thin film transistor (TFT).
OVDD shown in Figure 8 is the supply voltage that supply voltage supply circuit (not illustrating) is provided.And the OVSS shown in the figure, it is referential supply voltage, for example is earthing potential.In the nature of things, supply voltage OVDD is greater than supply voltage OVSS.In addition, a wherein source/drain electrode of transistor 802 is in order to receive video data DATA.And the grid of transistor 802 and 810 is all in order to receive sweep signal G n, wherein n is a natural number, and G nRepresent the sweep signal that n bar sweep trace is transmitted.As for the grid of transistor 804 then in order to receive sweep signal G nInversion signal XG nThe detailed annexation of the above member is showed in Fig. 8, just repeats no more at this.
Fig. 9 illustrates video data DATA, the sweep signal G of Fig. 8 nAnd inversion signal XG nSignal sequence.Can know by Fig. 9, during writing among the W, sweep signal G nBe electronegative potential, and sweep signal G nInversion signal XG nBe noble potential; Between light emission period among the E, sweep signal G nBe noble potential, and sweep signal G nInversion signal XG nBe electronegative potential.
Because the mode of operation of the mode of operation of organic light-emitting diode pixel circuit 800 shown in Figure 8 and organic light-emitting diode pixel circuit 300 shown in Figure 3 is close; Just repeat no more at this, and only come to explain in regular turn derivation through the size of current of Organic Light Emitting Diode 812 with following formula (8)～formula (10):
I OLED＝K(V SG-V th) 2 ……(8)
I OLED＝K(OVDD-V A-V th) 2 ……(9)
I OLED＝K(-V DATA+OVSS+V OLED-V th) 2 ……(10)
Wherein, I OLEDBe expressed as the size of current through Organic Light Emitting Diode 812, K is expressed as a constant, V SGBe expressed as the source electrode-grid voltage of transistor 808, V ThBe expressed as the critical conduction voltage of transistor 808, V ABe expressed as the voltage swing of contact A, V DATABe expressed as the voltage swing of video data DATA, as for V OLEDThen be expressed as the size of the cross-pressure of Organic Light Emitting Diode 812.
Can know I by formula (10) OLEDSize be and V OLEDSize be directly proportional.In other words, no matter how many aging cross-pressures of Organic Light Emitting Diode 812 that makes of Organic Light Emitting Diode 812 risen, and the size of current through Organic Light Emitting Diode 812 all can improve along with the rising degree of cross-pressure.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated through the raising of above-mentioned size of current, and then can improve the dent phenomenon of display frame.
The 6th embodiment:
Teaching through the 6th embodiment; Even those of ordinary skills should be known in that the transistor 804 in the organic light-emitting diode pixel circuit 800 makes into to realize with a N transistor npn npn, for example be to realize with a N type thin film transistor (TFT); Also can realize the present invention, one is shown in figure 10.
Figure 10 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 10 1000, transistor 804 has made into to realize with a N transistor npn npn, and the grid of transistor 804 also couples sweep signal G nAnd in all the other of Figure 10 indicate, be expressed as identical member or signal with the identical person of sign among Fig. 8.Making transistor 804 into realize with a N transistor npn npn benefit, is that organic light-emitting diode pixel circuit 1000 need not use sweep signal G nInversion signal XG n, make inversion signal XG nCan omit, and organic light-emitting diode pixel circuit 1000 still can be accordinged to sweep signal G shown in Figure 9 nOperate with the signal sequence of video data DATA.
The 7th embodiment:
Teaching through the 5th embodiment; Those of ordinary skills should know; Even the transistor 802 and 810 in the organic light-emitting diode pixel circuit 800 all makes into to realize with a N transistor npn npn; For example be all to realize that with a N type thin film transistor (TFT) also can realize the present invention, one is shown in figure 11.
Figure 11 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 11 1100, transistor 802 and 810 has made into to realize with a N transistor npn npn all, and the grid of transistor 802 and 810 also all couples sweep signal G nInversion signal XG nAnd in all the other of Figure 11 indicate, be expressed as identical member or signal with the identical person of sign among Fig. 8.All making transistor 802 and 810 into realize with a N transistor npn npn benefit, is that organic light-emitting diode pixel circuit 1100 need not use sweep signal G n, make sweep signal G nCan omit, and organic light-emitting diode pixel circuit 1100 still can be accordinged to sweep signal G shown in Figure 9 nInversion signal XG nOperate with the signal sequence of video data DATA.With another viewpoint, the transistor 802,804 and 810 in the organic light-emitting diode pixel circuit 1100 is exactly with described inversion signal XG nBeing used as general sweep signal uses.
Through the teaching of the 5th embodiment to the seven embodiment, can summarize transistor 802,804 and the rule of 810 conducting sequential among these embodiment.That is to say no matter transistor 802,804 and 810 is to realize with the N transistor npn npn or with the P transistor npn npn, these three transistorized conducting sequential all must meet such rule.This rule declaration is following: among the W, transistor 802 presents conducting according to its signal separately with transistor 810 during writing, and transistor 804 then appears according to its signal closes; Among the E, transistor 802 appears according to its signal with transistor 810 separately closes between light emission period, and transistor 804 then presents conducting according to its signal.Wherein, between light emission period E during writing after the W.
The 8th embodiment:
Through the teaching of first embodiment, the present invention further proposes another organic light-emitting diode pixel circuit again, and one is shown in figure 12.
Figure 12 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.This organic light-emitting diode pixel circuit 1200 is made up of with 1212 of Organic Light Emitting Diodes transistor 1202, electric capacity 1204, transistor 1206 (being driving transistors), transistor 1208, transistor 1210.And shown in figure 12, these transistors are all realized with a N transistor npn npn, for example are all to realize with a N type thin film transistor (TFT).
OVDD shown in Figure 12 is the supply voltage that supply voltage supply circuit (not illustrating) is provided.And the OVSS shown in the figure, it is referential supply voltage, for example is earthing potential.In the nature of things, supply voltage OVDD is greater than supply voltage OVSS.In addition, a wherein source/drain electrode of transistor 1202 is in order to receive video data DATA.And the grid of transistor 1202 and 1208 is all in order to receive sweep signal G n, wherein n is a natural number, and G nRepresent the sweep signal that n bar sweep trace is transmitted.As for the grid of transistor 1210 then in order to receive sweep signal G nInversion signal XG nThe detailed annexation of the above member is showed in Figure 12, just repeats no more at this.
Figure 13 illustrates video data DATA, the sweep signal G of Figure 12 nAnd inversion signal XG nSignal sequence.Can know by Figure 13, during writing among the W, sweep signal G nBe noble potential, and sweep signal G nInversion signal XG nBe electronegative potential; Between light emission period among the E, sweep signal G nBe electronegative potential, and sweep signal G nInversion signal XG nBe noble potential.
Because the mode of operation of the mode of operation of organic light-emitting diode pixel circuit 1200 shown in Figure 12 and organic light-emitting diode pixel circuit 300 shown in Figure 3 is close; Just repeat no more at this, and only come to explain in regular turn derivation through the size of current of Organic Light Emitting Diode 1212 with above-listed formula (5) and following formula (11):
I OLED＝K(V GS-V th) 2 ……(5)
I OLED＝K(OVSS+V OLED-V DATA-V th) 2 ……(11)
Wherein, I OLEDBe expressed as the size of current through Organic Light Emitting Diode 1212, K is expressed as a constant, V GSBe expressed as the grid-source voltage of transistor 1206, V ThBe expressed as the critical conduction voltage of transistor 1206, V OLEDBe expressed as the size of the cross-pressure of Organic Light Emitting Diode 1212, as for V DATAThen be expressed as the voltage swing of video data DATA.
Can know I by formula (11) OLEDSize be and V OLEDSize be directly proportional.In other words, no matter how many aging cross-pressures of Organic Light Emitting Diode 1212 that makes of Organic Light Emitting Diode 1212 risen, and the size of current through Organic Light Emitting Diode 1212 all can improve along with the rising degree of cross-pressure.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated through the raising of above-mentioned size of current, and then can improve the dent phenomenon of display frame.
The 9th embodiment:
Teaching through the 8th embodiment; Even those of ordinary skills should be known in that the transistor 1210 in the organic light-emitting diode pixel circuit 1200 makes into to realize with a P transistor npn npn, for example be to realize with a P type thin film transistor (TFT); Also can realize the present invention, one is shown in figure 14.
Figure 14 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 14 1400, transistor 1210 has made into to realize with a P transistor npn npn, and the grid of transistor 1210 also couples sweep signal G nAnd in all the other of Figure 14 indicate, be expressed as identical member or signal with the identical person of sign among Figure 12.Making transistor 1210 into realize with a P transistor npn npn benefit, is that organic light-emitting diode pixel circuit 1400 need not use sweep signal G nInversion signal XG n, make inversion signal XG nCan omit, and organic light-emitting diode pixel circuit 1400 still can be accordinged to sweep signal G shown in Figure 13 nOperate with the signal sequence of video data DATA.
The tenth embodiment:
Teaching through the 8th embodiment; Those of ordinary skills should know; Even the transistor 1202 and 1208 in the organic light-emitting diode pixel circuit 1200 all makes into to realize with a P transistor npn npn; For example be all to realize that with a P type thin film transistor (TFT) also can realize the present invention, one is shown in figure 15.
Figure 15 illustrates the organic light-emitting diode pixel circuit according to another embodiment of the present invention.In organic light-emitting diode pixel circuit shown in Figure 15 1500, transistor 1202 and 1208 has made into to realize with a P transistor npn npn all, and the grid of transistor 1202 and 1208 also all couples sweep signal G nInversion signal XG nAnd in all the other of Figure 15 indicate, be expressed as identical member or signal with the identical person of sign among Figure 12.All making transistor 1202 and 1208 into realize with a P transistor npn npn benefit, is that organic light-emitting diode pixel circuit 1500 need not use sweep signal G n, make sweep signal G nCan omit, and organic light-emitting diode pixel circuit 1500 still can be accordinged to sweep signal G shown in Figure 13 nInversion signal XG nOperate with the signal sequence of video data DATA.With another viewpoint, the transistor 1202,1208 and 1210 in the organic light-emitting diode pixel circuit 1500 is exactly with described inversion signal XG nBeing used as general sweep signal uses.
Through the teaching of the 8th embodiment to the ten embodiment, can summarize transistor 1202,1208 and the rule of 1210 conducting sequential among these embodiment.That is to say no matter transistor 1202,1208 and 1210 is to realize with the N transistor npn npn or with the P transistor npn npn, these three transistorized conducting sequential all must meet such rule.This rule declaration is following: among the W, transistor 1202 presents conducting according to its signal separately with transistor 1208 during writing, and transistor 1210 then appears according to its signal closes; Among the E, transistor 1202 appears according to its signal with transistor 1208 separately closes between light emission period, and transistor 1210 then presents conducting according to its signal.Wherein, between light emission period E during writing after the W.
In sum, the present invention adopts four transistors, an electric capacity and an Organic Light Emitting Diode to make organic light-emitting diode pixel circuit.Through the circuit characteristic that above-mentioned these members the special relation of coupling and each transistorized specific conducting sequential are produced, can make that the electric current through Organic Light Emitting Diode is directly proportional with the cross-pressure of Organic Light Emitting Diode itself.Therefore, even if Organic Light Emitting Diode is aging and make the cross-pressure of Organic Light Emitting Diode rise, the size of current through Organic Light Emitting Diode also can improve along with the rising degree of cross-pressure.In other words, the size of current through Organic Light Emitting Diode can improve along with the degree of aging of Organic Light Emitting Diode.Therefore, the brightness reduction appears in each pixel because of Organic Light Emitting Diode is aging phenomenon just can be compensated through the raising of above-mentioned size of current, and then can improve the dent phenomenon of display frame.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.

Claims (13)

1.一种有机发光二极管像素电路，其特征在于，包括：1. An OLED pixel circuit, characterized in that it comprises: 一第一晶体管，具有一第一栅极、一第一源/漏极与一第二源/漏极，该第一源/漏极接收一显示数据；A first transistor has a first gate, a first source/drain and a second source/drain, and the first source/drain receives a display data; 一电容，具有一第一端与一第二端，该第一端耦接该第二源/漏极；A capacitor has a first end and a second end, the first end is coupled to the second source/drain; 一第二晶体管，具有一第二栅极、一第三源/漏极与一第四源/漏极，该第二栅极耦接该电容的该第一端，该第四源/漏极耦接一第一电源电压；A second transistor has a second gate, a third source/drain and a fourth source/drain, the second gate is coupled to the first end of the capacitor, and the fourth source/drain coupled to a first power supply voltage; 一第三晶体管，具有一第三栅极、一第五源/漏极与一第六源/漏极，该第五源/漏极耦接该电容的该第二端，该第六源/漏极耦接该第三源/漏极；A third transistor has a third gate, a fifth source/drain and a sixth source/drain, the fifth source/drain is coupled to the second end of the capacitor, the sixth source/drain the drain is coupled to the third source/drain; 一第四晶体管，具有一第四栅极、一第七源/漏极与一第八源/漏极，该第七源/漏极耦接该电容的该第二端，该第八源/漏极接收一参考信号；以及A fourth transistor has a fourth gate, a seventh source/drain and an eighth source/drain, the seventh source/drain is coupled to the second end of the capacitor, the eighth source/drain the drain receives a reference signal; and 一有机发光二极管，其阳极与阴极分别耦接一第二电源电压与该第三源/漏极，其中该第二电源电压大于该第一电源电压；An organic light emitting diode, the anode and the cathode of which are respectively coupled to a second power supply voltage and the third source/drain, wherein the second power supply voltage is greater than the first power supply voltage; 在一写入期间中，该第一晶体管与该第三晶体管各自依据其栅极信号而呈现导通，而该第四晶体管则依据其栅极信号而呈现关闭，在一发光期间中，该第一晶体管与该第三晶体管各自依据其栅极信号而呈现关闭，而该第四晶体管则依据其栅极信号而呈现导通，其中该发光期间在该写入期间之后。During a writing period, the first transistor and the third transistor are turned on according to their gate signals, and the fourth transistor is turned off according to their gate signals. During a light emitting period, the first transistor is turned off according to its gate signal. A transistor and the third transistor are respectively turned off according to their gate signals, and the fourth transistor is turned on according to their gate signals, wherein the light-emitting period is after the write-in period. 2.根据权利要求1所述的有机发光二极管像素电路，其特征在于，该第一晶体管、该第二晶体管、该第三晶体管与该第四晶体管皆以一N型晶体管来实现，且该第一栅极与该第三栅极皆耦接一扫描信号，而该第四栅极耦接该扫描信号的反相信号，其中在该写入期间中，该扫描信号为高电位，而该扫描信号的反相信号为低电位，在该发光期间中，该扫描信号为低电位，而该扫描信号的反相信号为高电位。2. The organic light emitting diode pixel circuit according to claim 1, wherein the first transistor, the second transistor, the third transistor and the fourth transistor are all realized by an N-type transistor, and the first transistor Both a grid and the third grid are coupled to a scanning signal, and the fourth grid is coupled to an inversion signal of the scanning signal, wherein during the writing period, the scanning signal is at a high potential, and the scanning The inversion signal of the signal is a low potential, and during the light-emitting period, the scanning signal is a low potential, and the inversion signal of the scanning signal is a high potential. 3.根据权利要求1所述的有机发光二极管像素电路，其特征在于，该第一晶体管、该第二晶体管与该第三晶体管皆以一N型晶体管来实现，而该第四晶体管则以一P型晶体管来实现，且该第一栅极、该第三栅极与该第四栅极皆耦接一扫描信号，其中在该写入期间中，该扫描信号为高电位，而在该发光期间中，该扫描信号为低电位。3. The organic light emitting diode pixel circuit according to claim 1, wherein the first transistor, the second transistor and the third transistor are all implemented as an N-type transistor, and the fourth transistor is implemented as an N-type transistor. P-type transistors are implemented, and the first gate, the third gate and the fourth gate are all coupled to a scanning signal, wherein during the writing period, the scanning signal is at a high potential, and during the light emitting During the period, the scan signal is at low potential. 4.根据权利要求1所述的有机发光二极管像素电路，其特征在于，该第二晶体管与该第四晶体管皆以一N型晶体管来实现，而该第一晶体管与该第三晶体管则皆以一P型晶体管来实现，且该第一栅极、该第三栅极与该第四栅极皆耦接一扫描信号，其中在该写入期间中，该扫描信号为低电位，而在该发光期间中，该扫描信号为高电位。4. The organic light emitting diode pixel circuit according to claim 1, wherein the second transistor and the fourth transistor are both implemented as an N-type transistor, and the first transistor and the third transistor are both implemented as A P-type transistor is implemented, and the first gate, the third gate and the fourth gate are all coupled to a scanning signal, wherein during the writing period, the scanning signal is at a low potential, and in the During the light emitting period, the scan signal is at a high potential. 5.根据权利要求1所述的有机发光二极管像素电路，其特征在于，该第四晶体管的该第八源/漏极耦接该第二电源电压，以将该第二电源电压当作该参考信号。5. The organic light emitting diode pixel circuit according to claim 1, wherein the eighth source/drain of the fourth transistor is coupled to the second power supply voltage, so that the second power supply voltage is used as the reference Signal. 6.一种有机发光二极管像素电路，其特征在于，包括：6. An OLED pixel circuit, characterized in that it comprises: 一第一晶体管，具有一第一栅极、一第一源/漏极与一第二源/漏极，该第一源/漏极接收一显示数据；A first transistor has a first gate, a first source/drain and a second source/drain, and the first source/drain receives a display data; 一电容，具有一第一端与一第二端，该第一端耦接该第二源/漏极；A capacitor has a first end and a second end, the first end is coupled to the second source/drain; 一第二晶体管，具有一第二栅极、一第三源/漏极与一第四源/漏极，该第二栅极耦接该电容的该第一端，该第三源/漏极耦接一第一电源电压；A second transistor has a second gate, a third source/drain and a fourth source/drain, the second gate is coupled to the first end of the capacitor, the third source/drain coupled to a first power supply voltage; 一第三晶体管，具有一第三栅极、一第五源/漏极与一第六源/漏极，该第五源/漏极耦接该电容的该第二端，该第六源/漏极耦接该第三源/漏极；A third transistor has a third gate, a fifth source/drain and a sixth source/drain, the fifth source/drain is coupled to the second end of the capacitor, the sixth source/drain the drain is coupled to the third source/drain; 一第四晶体管，具有一第四栅极、一第七源/漏极与一第八源/漏极，该第七源/漏极耦接该电容的该第二端，该第八源/漏极耦接该第四源/漏极；以及A fourth transistor has a fourth gate, a seventh source/drain and an eighth source/drain, the seventh source/drain is coupled to the second end of the capacitor, the eighth source/drain a drain coupled to the fourth source/drain; and 一有机发光二极管，其阳极与阴极分别耦接该第四源/漏极与一第二电源电压，其中该第二电源电压小于该第一电源电压；an organic light emitting diode, the anode and the cathode of which are respectively coupled to the fourth source/drain and a second power supply voltage, wherein the second power supply voltage is lower than the first power supply voltage; 在一写入期间中，该第一晶体管与该第四晶体管各自依据其栅极信号而呈现导通，而该第三晶体管则依据其栅极信号而呈现关闭，在一发光期间中，该第一晶体管与该第四晶体管各自依据其栅极信号而呈现关闭，而该第三晶体管则依据其栅极信号而呈现导通，其中该发光期间在该写入期间之后。During a writing period, the first transistor and the fourth transistor are turned on according to their gate signals, and the third transistor is turned off according to their gate signals. During a light emitting period, the first transistor is turned off according to its gate signal. A transistor and the fourth transistor are respectively turned off according to their gate signals, and the third transistor is turned on according to their gate signals, wherein the light-emitting period is after the write-in period. 7.根据权利要求6所述的有机发光二极管像素电路，其特征在于，该第一晶体管、该第二晶体管、该第三晶体管与该第四晶体管皆以一P型晶体管来实现，且该第一栅极与该第四栅极皆耦接一扫描信号，而该第三栅极耦接该扫描信号的反相信号，其中在该写入期间中，该扫描信号为低电位，而该扫描信号的反相信号为高电位，在该发光期间中，该扫描信号为高电位，而该扫描信号的反相信号为低电位。7. The organic light emitting diode pixel circuit according to claim 6, wherein the first transistor, the second transistor, the third transistor and the fourth transistor are all realized by a P-type transistor, and the first transistor Both a grid and the fourth grid are coupled to a scanning signal, and the third grid is coupled to an inverse signal of the scanning signal, wherein during the writing period, the scanning signal is at a low potential, and the scanning The inverse signal of the signal is high potential, and during the light emitting period, the scan signal is high potential, and the invert signal of the scan signal is low potential. 8.根据权利要求6所述的有机发光二极管像素电路，其特征在于，该第一晶体管、该第二晶体管与该第四晶体管皆以一P型晶体管来实现，而该第三晶体管则以一N型晶体管来实现，且该第一栅极、该第三栅极与该第四栅极皆耦接一扫描信号，其中在该写入期间中，该扫描信号为低电位，而在该发光期间中，该扫描信号为高电位。8. The organic light emitting diode pixel circuit according to claim 6, wherein the first transistor, the second transistor and the fourth transistor are all implemented as a P-type transistor, and the third transistor is implemented as a N-type transistors are implemented, and the first gate, the third gate and the fourth gate are all coupled to a scanning signal, wherein during the writing period, the scanning signal is at a low potential, and during the light emitting During this period, the scan signal is at a high potential. 9.根据权利要求6所述的有机发光二极管像素电路，其特征在于，该第二晶体管与该第三晶体管皆以一P型晶体管来实现，而该第一晶体管与该第四晶体管则皆以一N型晶体管来实现，且该第一栅极、该第三栅极与该第四栅极皆耦接一扫描信号，其中在该写入期间中，该扫描信号为高电位，而在该发光期间中，该扫描信号为低电位。9. The OLED pixel circuit according to claim 6, wherein the second transistor and the third transistor are implemented as a P-type transistor, and the first transistor and the fourth transistor are implemented as a P-type transistor. implemented by an N-type transistor, and the first gate, the third gate and the fourth gate are all coupled to a scanning signal, wherein in the writing period, the scanning signal is at a high potential, and in the During the light-emitting period, the scan signal is at a low potential. 10.一种有机发光二极管像素电路，其特征在于，包括：10. An OLED pixel circuit, characterized in that it comprises: 一第一晶体管，具有一第一栅极、一第一源/漏极与一第二源/漏极，该第一源/漏极接收一显示数据；A first transistor has a first gate, a first source/drain and a second source/drain, and the first source/drain receives a display data; 一电容，具有一第一端与一第二端，该第二端耦接该第二源/漏极；A capacitor has a first end and a second end, the second end is coupled to the second source/drain; 一第二晶体管，具有一第二栅极、一第三源/漏极与一第四源/漏极，该第二栅极耦接该电容的该第一端，该第三源/漏极耦接一第一电源电压；A second transistor has a second gate, a third source/drain and a fourth source/drain, the second gate is coupled to the first end of the capacitor, the third source/drain coupled to a first power supply voltage; 一第三晶体管，具有一第三栅极、一第五源/漏极与一第六源/漏极，该第五源/漏极耦接该电容的该第二端，该第六源/漏极耦接该第四源/漏极；A third transistor has a third gate, a fifth source/drain and a sixth source/drain, the fifth source/drain is coupled to the second end of the capacitor, the sixth source/drain the drain is coupled to the fourth source/drain; 一第四晶体管，具有一第四栅极、一第七源/漏极与一第八源/漏极，该第七源/漏极耦接该电容的该第一端，该第八源/漏极耦接该第四源/漏极；以及A fourth transistor has a fourth gate, a seventh source/drain and an eighth source/drain, the seventh source/drain is coupled to the first end of the capacitor, the eighth source/drain a drain coupled to the fourth source/drain; and 一有机发光二极管，其阳极与阴极分别耦接该第四源/漏极与一第二电源电压，其中该第二电源电压小于该第一电源电压；an organic light emitting diode, the anode and the cathode of which are respectively coupled to the fourth source/drain and a second power supply voltage, wherein the second power supply voltage is lower than the first power supply voltage; 在一写入期间中，该第一晶体管与该第四晶体管各自依据其栅极信号而呈现导通，而该第三晶体管则依据其栅极信号而呈现关闭，在一发光期间中，该第一晶体管与该第四晶体管各自依据其栅极信号而呈现关闭，而该第三晶体管则依据其栅极信号而呈现导通，其中该发光期间在该写入期间之后。During a writing period, the first transistor and the fourth transistor are turned on according to their gate signals, and the third transistor is turned off according to their gate signals. During a light emitting period, the first transistor is turned off according to its gate signal. A transistor and the fourth transistor are respectively turned off according to their gate signals, and the third transistor is turned on according to their gate signals, wherein the light-emitting period is after the write-in period. 11.根据权利要求10所述的有机发光二极管像素电路，其特征在于，该第一晶体管、该第二晶体管、该第三晶体管与该第四晶体管皆以一N型晶体管来实现，且该第一栅极与该第四栅极皆耦接一扫描信号，而该第三栅极耦接该扫描信号的反相信号，其中在该写入期间中，该扫描信号为高电位，而该扫描信号的反相信号为低电位，在该发光期间中，该扫描信号为低电位，而该扫描信号的反相信号为高电位。11. The OLED pixel circuit according to claim 10, wherein the first transistor, the second transistor, the third transistor and the fourth transistor are all realized by an N-type transistor, and the first transistor Both a gate and the fourth gate are coupled to a scan signal, and the third gate is coupled to an inverse signal of the scan signal, wherein during the writing period, the scan signal is at a high potential, and the scan The inversion signal of the signal is a low potential, and during the light-emitting period, the scan signal is a low potential, and the inversion signal of the scan signal is a high potential. 12.根据权利要求10所述的有机发光二极管像素电路，其特征在于，该第一晶体管、该第二晶体管与该第四晶体管皆以一N型晶体管来实现，而该第三晶体管则以一P型晶体管来实现，且该第一栅极、该第三栅极与该第四栅极皆耦接一扫描信号，其中在该写入期间中，该扫描信号为高电位，而在该发光期间中，该扫描信号为低电位。12. The organic light emitting diode pixel circuit according to claim 10, wherein the first transistor, the second transistor and the fourth transistor are all implemented as an N-type transistor, and the third transistor is implemented as an N-type transistor. P-type transistors are implemented, and the first gate, the third gate and the fourth gate are all coupled to a scanning signal, wherein during the writing period, the scanning signal is at a high potential, and during the light emitting During the period, the scan signal is at low potential. 13.根据权利要求10所述的有机发光二极管像素电路，其特征在于，该第二晶体管与该第三晶体管皆以一N型晶体管来实现，而该第一晶体管与该第四晶体管则皆以一P型晶体管来实现，且该第一栅极、该第三栅极与该第四栅极皆耦接一扫描信号，其中在该写入期间中，该扫描信号为低电位，而在该发光期间中，该扫描信号为高电位。13. The organic light emitting diode pixel circuit according to claim 10, wherein the second transistor and the third transistor are both implemented as an N-type transistor, and the first transistor and the fourth transistor are both implemented as A P-type transistor is implemented, and the first gate, the third gate and the fourth gate are all coupled to a scanning signal, wherein during the writing period, the scanning signal is at a low potential, and in the During the light emitting period, the scan signal is at a high potential.
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