CN101900770B - Method and system for assessing radiation resisting capability of device for satellite - Google Patents

Abstract

The invention relates to a method for assessing radiation resisting capability of a device for a satellite. The method comprises the following steps of: performing heavy ion single event effect test on the device to be tested to acquire a test data; fitting the test data by using a Weibull function to obtain a scale parameter and a shape parameter, and deducing a proton single event turnover section expression; calculating a proton single event turnover rate according to the proton single event turnover section expression and a proton single event turnover rate calculation formula; and assessing the radiation resisting capability of the device to be tested according to the proton single event turnover rate. The invention also relates to a system for assessing the radiation resisting capability of the device for the satellite.

Description

A kind of appraisal procedure of radiation resisting capability of device for satellite and system thereof

Technical field

The present invention relates to device for satellite risk assessment technology field, be specifically related to a kind of appraisal procedure and system thereof of radiation resisting capability of device for satellite.

Background technology

Satellite system is used a large amount of semiconductor collectors, such as microprocessor (CPU), digital signal processor (DSP), field programmable logic array (FPLA) (FPGA), storer (Memory), and gate circuit etc., but be applied in SIC (semiconductor integrated circuit) on the satellite will meet with very severe in the space environment, such as radiation environment, hot vacuum environment, micrometeor/space debris environment etc.

Space radiation environment will cause SIC (semiconductor integrated circuit) ionization damage and (/ or) discomposition damage.The discomposition damage is atomic displacement behind the high energy proton incident semiconductor material, causes lattice imperfection, causes device performance to descend, and Displacement damage is cumulative effect, namely is accumulated to certain fluence and also can causes component failure; Ionization damage comprises total dose effect damage and single particle effect damage.The total dose effect damage mainly is by proton or the electron impact semiconductor devices in space, induces electron-hole pair in device oxide layer and interface state, causes device electrical performance to be degenerated.Single particle effect refers to that single high energy particle incident plate for semiconductor equipment causes the state of device stores unit to change or logic state changes or other is such as phenomenons such as function termination, single particle effect comprises single-particle inversion (SEU), single event latch-up (SEL), single-particle function termination (SEFI), single event burnout (SEB) etc., single particle effect is transient effect, the probability of to be device in the space occur single-particle is at random, and single particle effect is mainly caused by the heavy ion in space and high energy proton.

Carrying out the space environment effects such as ionization damage and (/ or) discomposition damage on ground and test and scientificlly and effectively assess radiation resisting capability of device for satellite, is the key link that satellite is selected components and parts, also is the highly reliable important leverage of satellite.At present, China has possessed the total dose effect test, and ability, method and the means of the single particle effect test that causes of heavy ion, can assess the capability of resistance to radiation of device for satellite by above-mentioned test.But, owing to also do not possess capacity of equipment and means that proton causes the single particle effect test, therefore, by carry out the test of proton single particle effect on ground, calculate the probability that the proton single event upset rate comes proton single event in the computer memory radiation environment, thereby the method for the capability of resistance to radiation of assessment device for satellite can't realize also.

Test by carry out the proton single particle effect on ground though exist in the prior art, and direct empirical algorithms based on other test figures reckoning proton single event upset rates, for example:

The people such as J.Barak have proposed a kind of empirical algorithms of calculating proton based on heavy ion single particle effect test figure:

${\mathrm{\σ}}_P(\∞)=2.22\×{10}^{-5}{\mathrm{\σ}}_h/L_{0.25}^2$

σ _p(∞): be proton single-particle inversion utmost point root cross section, σ _h: be the saturated cross section of heavy ion single-particle inversion;

The people such as Petersen have proposed a kind ofly to it is estimated that the threshold value empirical algorithms of proton, L based on heavy ion single particle effect test figure ₀Be defined as the LET value of the corresponding heavy ion in 10% place of the saturated cross section of single-particle inversion face:

A＝L ₀+15

In the base: A is the single-particle inversion cross section of proton energy when ∞, also claims limit cross section; L ₀Be defined as the LET value of the corresponding heavy ion in 10% place of the saturated cross section of single-particle inversion face.But empirical algorithms can cause the error of the order of magnitude.

Summary of the invention

The purpose of this invention is to provide a kind of proton single particle effect test that need not to carry out on ground, assess the method for the capability of resistance to radiation of device for satellite with heavy ion experimental data reckoning proton single event upset rate, to remedy the deficiencies in the prior art.

For achieving the above object, the present invention adopts following technical scheme:

A kind of appraisal procedure of radiation resisting capability of device for satellite comprises step:

S1. device under test is carried out the test of heavy ion single particle effect, obtain test figure;

S2. according to described test figure, deduce the Proton Single Event Upset Cross Section expression formula;

S3. according to described Proton Single Event Upset Cross Section expression formula and proton single event upset rate computing formula, calculate described proton single event upset rate;

S4. according to described proton single event upset rate, assess the capability of resistance to radiation of described device under test.

Wherein, described step S2 further comprises:

S2.1 utilizes the described test figure of Weibull Function Fitting, draws scale parameter and form parameter;

S2.2 deduces the Proton Single Event Upset Cross Section expression formula according to described test figure and described scale parameter, form parameter.

Wherein, described proton single event upset rate computing formula is:

$R_p=\underset{E_0}{\overset{E_{\max }}{\∫}}\mathrm{\Φ}\left(E\right)\mathrm{\σ}\left(E\right)\mathrm{dE}$

In the formula: R _pBe the proton single event upset rate, Φ (E) is the proton differential energy spectrum, and σ (E) is Proton Single Event Upset Cross Section, and E is proton energy, E ₀Be proton single-particle inversion energy threshold, E _MaxBe the Spacial Proton ceiling capacity.

Wherein, described test figure comprises: the saturated cross section of heavy ion single-particle inversion, the effective LET value of heavy ion single-particle, heavy ion single particle effect threshold value.

A kind of evaluating system of radiation resisting capability of device for satellite, this system comprises: acquiring unit is used for obtaining the test figure of device under test heavy ion single-particle inversion test; Deduce the unit, be used for according to described test figure, deduce Proton Single Event Upset Cross Section; Computing unit is used for according to described Proton Single Event Upset Cross Section and proton single event upset rate computing formula, calculates described proton single event upset rate; Assessment unit is used for according to described proton single event upset rate, assesses the capability of resistance to radiation of described device under test.

Wherein, described deduction unit further comprises: data are processed subelement, utilize the described test figure of Weibull Function Fitting, draw scale parameter and form parameter; Deduce subelement, be used for deducing the Proton Single Event Upset Cross Section expression formula according to described test figure and described scale parameter, form parameter.

Wherein, described proton single event upset rate computing formula is:

$R_p=\underset{E_0}{\overset{E_{\max }}{\∫}}\mathrm{\Φ}\left(E\right)\mathrm{\σ}\left(E\right)\mathrm{dE}$

In the formula: R _pBe the proton single event upset rate, Φ (E) is the proton differential energy spectrum, and σ (E) is Proton Single Event Upset Cross Section, and E is proton energy, E ₀Be proton single-particle inversion energy threshold, E _MaxBe the Spacial Proton ceiling capacity.

Wherein, described test figure comprises: the saturated cross section of heavy ion single-particle inversion, the effective LET value of heavy ion single-particle, heavy ion single particle effect threshold value.

Use method and system of the present invention that radiation resisting capability of device for satellite is assessed, by deducing out the proton single event upset rate with the test of heavy ion single-particle inversion, need not carry out the test of proton single particle effect and realize that the comprehensive assessment device is at task device single particle effect risk level, needn't process the radiation pollution that is caused by proton, realized that the comprehensive assessment device at task device single particle effect risk level, makes risk assessment more scientific, more effective.

Description of drawings

The appraisal procedure process flow diagram of Fig. 1 radiation resisting capability of device for satellite of the present invention;

Fig. 2 is the detail flowchart of step 2;

The evaluating system structural drawing of Fig. 3 radiation resisting capability of device for satellite of the present invention.

Embodiment

Appraisal procedure and the system thereof of the radiation resisting capability of device for satellite that the present invention proposes are described as follows in conjunction with the accompanying drawings and embodiments.

As shown in Figure 1, the appraisal procedure of radiation resisting capability of device for satellite of the present invention comprises step:

S1. device under test is carried out the test of heavy ion single particle effect, obtain the test figure that comprises the saturated cross section of heavy ion single-particle inversion, the effective LET value of heavy ion single-particle, heavy ion single particle effect threshold value etc.;

S2. according to test figure, calculate Proton Single Event Upset Cross Section;

S3. according to Proton Single Event Upset Cross Section and proton single event upset rate computing formula, calculate the proton single event upset rate;

S4. according to the proton single event upset rate, assess the capability of resistance to radiation of device under test.

Wherein, as shown in Figure 2, step S2 further comprises:

S2.1 utilizes Weibull Function Fitting test figure, draws scale parameter and form parameter;

Utilize the Weibull function to carry out match complete heavy ion single-particle σ-LET curve

σ(L)＝σsat(1-exp{-[(L-L0)/w] ^s}).........(1)

Wherein: L is effective LET value, unit: MeV-cm ²/ g;

σ sat is the saturated cross section of heavy ion single-particle inversion;

L ₀Be the single particle effect threshold value;

W is scale parameter, and s is form parameter.

S2.2 deduces the Proton Single Event Upset Cross Section expression formula according to test figure and scale parameter w, form parameter s;

$\mathrm{\σ}\left(E\right)={\mathrm{\Σ}}_0[1-e^{\mathrm{\β}\left(E_P\right)}]c{N}_{\mathrm{at}}{\mathrm{\σ}}_{\mathrm{nuclear}}\left(E_P\right)......\left(2\right)$

Wherein: $\mathrm{\β}\left(E_P\right)=-{\left(\frac{L\left(E_{\mathrm{si}}\left(E_p\right)\right)-\mathrm{Lo}}{W}\right)}^S...\left(3\right);$

E _pIt is proton energy;

$E_{\mathrm{si}}=\frac{{4A}_{\mathrm{si}}}{{(1+A_{\mathrm{si}})}^2}{E}_p................\left(4\right);$

A _SiIt is the atomic wts 28.09 of silicon atom;

$L\left(E\right)=e^{\left(\frac{K_1+K_2+K_3{E}^2}{1+K_{4}E+K_5{E}^2}\right).......\left(5\right);}$

K ₁＝-0.15，K ₂＝1.04，K ₃＝3.100，K ₄＝0.003106；

C is density, the g/cm of unit ²

N _AtIt is the silicon atom number in the unit cubic centimetre;

${\mathrm{\σ}}_{\mathrm{nuclear}}\left(E_P\right)=\mathrm{\γ}{E}_P^{\mathrm{\α}}10^{-27}..........\left(6\right);$

γ＝758.95，α＝-0.5；

Bring w, s into formula (3), find the solution β (E _p), release the Proton Single Event Upset Cross Section expression formula in conjunction with formula (3), (4), (5), (6).

Proton single event upset rate computing formula among the step S3 is as follows:

$R_p=\underset{E_0}{\overset{E_{\max }}{\∫}}\mathrm{\Φ}\left(E\right)\mathrm{\σ}\left(E\right)\mathrm{dE}........\left(7\right)$

In the formula: R _pBe proton single event upset rate (day ^-1Bit ^-1), Φ (E) is proton differential energy spectrum (cm ^-2Day ^-1MeV ^-1), σ (E) is Proton Single Event Upset Cross Section (cm ²/ bit), E is proton energy (MeV), E ₀For proton single-particle inversion energy threshold (MeV) is tried to achieve E according to formula (2) _MaxBe Spacial Proton ceiling capacity (MeV).

Wherein Φ (E) and E _MaxCan obtain by inquiry.σ (E) is drawn by step S2.2.

As shown in Figure 2, the evaluating system of radiation resisting capability of device for satellite of the present invention comprises:

Acquiring unit is used for obtaining the test figure of device under test heavy ion single-particle inversion test; Deduce the unit, be used for according to test figure, deduce Proton Single Event Upset Cross Section; Computing unit is used for according to Proton Single Event Upset Cross Section and proton single event upset rate computing formula, calculates the proton single event upset rate; Assessment unit is used for according to the proton single event upset rate, the capability of resistance to radiation of assessment device under test.

Wherein, deducing the unit further comprises: data are processed subelement, utilize Weibull Function Fitting test figure, draw scale parameter and form parameter; Deduce subelement, be used for according to test figure and tell scale parameter, form parameter, deduce the Proton Single Event Upset Cross Section expression formula.

Above embodiment only is used for explanation the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; in the situation that does not break away from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.

Claims (6)

1. the appraisal procedure of a radiation resisting capability of device for satellite is characterized in that, the method comprising the steps of:

S1. device under test is carried out the test of heavy ion single particle effect, obtain test figure;

S2. according to described test figure, deduce the Proton Single Event Upset Cross Section expression formula;

S3. according to described Proton Single Event Upset Cross Section expression formula and proton single event upset rate computing formula, calculate described proton single event upset rate;

S4. according to described proton single event upset rate, assess the capability of resistance to radiation of described device under test;

Described Proton Single Event Upset Cross Section expression formula is:

$\mathrm{\σ}\left(E\right)={\mathrm{\Σ}}_0[1-e^{\mathrm{\β}\left(E_P\right)}]c{N}_{\mathrm{at}}{\mathrm{\σ}}_{\mathrm{nuclear}}\left(E_P\right)$

Wherein: $\mathrm{\β}\left(E_P\right)=-{\left(\frac{L\left(E_{\mathrm{si}}\left(E_p\right)\right)-\mathrm{Lo}}{W}\right)}^S;$

E _pIt is proton energy;

$E_{\mathrm{si}}=\frac{4A_{\mathrm{si}}}{{(1+A_{\mathrm{si}})}^2}{E}_p$

A _SiIt is the atomic wts 28.09 of silicon atom;

$L\left(E\right)=e^{\left(\frac{K_1+K_2+K_3{E}^2}{1+K_{4}E+K_5{E}^2}\right)}$

K ₁=-0.15，K ₂=1.04，K ₃=3.100，K ₄=0.003106；

W is scale parameter, and S is form parameter, and C is density, the g/cm of unit ²

N _AtIt is the silicon atom number in the unit cubic centimetre;

${\mathrm{\σ}}_{\mathrm{nuclear}}\left(E_P\right)=\mathrm{\γ}{E}_P^{\mathrm{\α}}{10}^{-27}$

γ=758.95，α=-0.5；

Described proton single event upset rate computing formula is:

$R_p=\underset{E_0}{\overset{E_{\max }}{\∫}}\mathrm{\Φ}\left(E\right)\mathrm{\σ}\left(E\right)\mathrm{dE}$

In the formula: R _pBe the proton single event upset rate, Φ (E) is the proton differential energy spectrum, and σ (E) is Proton Single Event Upset Cross Section, and E is proton energy, E ₀Be proton single-particle inversion energy threshold, E _MaxBe the Spacial Proton ceiling capacity.

2. the appraisal procedure of radiation resisting capability of device for satellite as claimed in claim 1 is characterized in that, described step S2 further comprises:

S2.1 utilizes the described test figure of Weibull Function Fitting, draws scale parameter and form parameter;

S2.2 deduces the Proton Single Event Upset Cross Section expression formula according to described test figure and described scale parameter, form parameter.

3. the appraisal procedure of radiation resisting capability of device for satellite as claimed in claim 1 or 2 is characterized in that, described test figure comprises: the saturated cross section of heavy ion single-particle inversion, the effective LET value of heavy ion single-particle, heavy ion single particle effect threshold value.

4. the evaluating system of a radiation resisting capability of device for satellite is characterized in that, this system comprises:

Acquiring unit is used for obtaining the test figure of device under test heavy ion single-particle inversion test;

Deduce the unit, be used for according to described test figure, deduce Proton Single Event Upset Cross Section;

Computing unit is used for according to described Proton Single Event Upset Cross Section and proton single event upset rate computing formula, calculates described proton single event upset rate;

Assessment unit is used for according to described proton single event upset rate, assesses the capability of resistance to radiation of described device under test;

Described Proton Single Event Upset Cross Section expression formula is:

$\mathrm{\σ}\left(E\right)={\mathrm{\Σ}}_0[1-e^{\mathrm{\β}\left(E_P\right)}]c{N}_{\mathrm{at}}{\mathrm{\σ}}_{\mathrm{nuclear}}\left(E_P\right)$

Wherein: $\mathrm{\β}\left(E_P\right)=-{\left(\frac{L\left(E_{\mathrm{si}}\left(E_p\right)\right)-\mathrm{Lo}}{W}\right)}^S;$

E _pIt is proton energy;

$E_{\mathrm{si}}=\frac{4A_{\mathrm{si}}}{{(1+A_{\mathrm{si}})}^2}{E}_p$

A _SiIt is the atomic wts 28.09 of silicon atom;

$L\left(E\right)=e^{\left(\frac{K_1+K_2+K_3{E}^2}{1+K_{4}E+K_5{E}^2}\right)}$

K ₁=-0.15，K ₂=1.04，K ₃=3.100，K ₄=0.003106；

W is scale parameter, and S is form parameter, and C is density, the g/cm of unit ²

N _AtIt is the silicon atom number in the unit cubic centimetre;

${\mathrm{\σ}}_{\mathrm{nuclear}}\left(E_P\right)=\mathrm{\γ}{E}_P^{\mathrm{\α}}{10}^{-27}$

γ=758.95，α=-0.5；

Described proton single event upset rate computing formula is:

$R_p=\underset{E_0}{\overset{E_{\max }}{\∫}}\mathrm{\Φ}\left(E\right)\mathrm{\σ}\left(E\right)\mathrm{dE}$

In the formula: R _pBe the proton single event upset rate, Φ (E) is the proton differential energy spectrum, and σ (E) is Proton Single Event Upset Cross Section, and E is proton energy, E ₀Be proton single-particle inversion energy threshold, E _MaxBe the Spacial Proton ceiling capacity.

5. the evaluating system of radiation resisting capability of device for satellite as claimed in claim 4 is characterized in that, described deduction unit further comprises:

Data are processed subelement, utilize the described test figure of Weibull Function Fitting, draw scale parameter and form parameter;

Deduce subelement, be used for deducing the Proton Single Event Upset Cross Section expression formula according to described test figure and described scale parameter, form parameter.

6. such as the evaluating system of claim 4 or 5 described radiation resisting capability of device for satellite, it is characterized in that described test figure comprises: the saturated cross section of heavy ion single-particle inversion, the effective LET value of heavy ion single-particle, heavy ion single particle effect threshold value.

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