CN101873104A - 可使用不同电池电源电压的射频功率放大器及其操作方法 - Google Patents
可使用不同电池电源电压的射频功率放大器及其操作方法 Download PDFInfo
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- CN101873104A CN101873104A CN201010152409A CN201010152409A CN101873104A CN 101873104 A CN101873104 A CN 101873104A CN 201010152409 A CN201010152409 A CN 201010152409A CN 201010152409 A CN201010152409 A CN 201010152409A CN 101873104 A CN101873104 A CN 101873104A
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- 238000000034 method Methods 0.000 title claims abstract description 18
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0244—Stepped control
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/428,616 US7786807B1 (en) | 2009-04-23 | 2009-04-23 | Cascode CMOS RF power amplifier with programmable feedback cascode bias under multiple supply voltages |
US12/428,616 | 2009-04-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101873104A true CN101873104A (zh) | 2010-10-27 |
CN101873104B CN101873104B (zh) | 2012-12-12 |
Family
ID=42342706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101524097A Active CN101873104B (zh) | 2009-04-23 | 2010-04-21 | 可使用不同电池电源电压的射频功率放大器及其操作方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7786807B1 (zh) |
EP (1) | EP2244376B1 (zh) |
CN (1) | CN101873104B (zh) |
HK (1) | HK1149645A1 (zh) |
TW (1) | TWI467917B (zh) |
Cited By (9)
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CN103095227A (zh) * | 2012-12-28 | 2013-05-08 | 成都泰格微波技术股份有限公司 | WiMAX射频前端双向放大器 |
CN103620955A (zh) * | 2011-04-19 | 2014-03-05 | 高通股份有限公司 | 具有改善的效率和输出功率的rf功率放大器 |
US9148088B1 (en) | 2014-05-20 | 2015-09-29 | Advanced Semiconductor Engineering Inc. | RF stacked power amplifier bias method |
CN105788208A (zh) * | 2016-03-01 | 2016-07-20 | 秦铭海 | 一种用于医疗的无线模块 |
CN104521138B (zh) * | 2012-08-08 | 2017-07-25 | 高通股份有限公司 | 多共源共栅放大器偏置技术 |
CN108134603A (zh) * | 2017-12-30 | 2018-06-08 | 杭州谱育科技发展有限公司 | 四极杆电压控制电路及方法 |
CN110350929A (zh) * | 2018-04-04 | 2019-10-18 | 三星电子株式会社 | 射频集成电路、接收器和控制接收器的方法 |
CN111434034A (zh) * | 2017-12-15 | 2020-07-17 | 华为技术有限公司 | 用于光通信的通带频率可调的差分共源共栅放大器 |
CN114629454A (zh) * | 2020-12-08 | 2022-06-14 | 瑞昱半导体股份有限公司 | 放大器装置 |
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US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
US9026070B2 (en) | 2003-12-18 | 2015-05-05 | Qualcomm Incorporated | Low-power wireless diversity receiver with multiple receive paths |
JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Rfフロントエンド集積回路 |
US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
US9450665B2 (en) | 2005-10-19 | 2016-09-20 | Qualcomm Incorporated | Diversity receiver for wireless communication |
JP5417346B2 (ja) | 2008-02-28 | 2014-02-12 | ペレグリン セミコンダクター コーポレーション | 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置 |
EP2346169A3 (en) | 2008-07-18 | 2013-11-20 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
US7872533B2 (en) * | 2009-06-03 | 2011-01-18 | Peregrine Semiconductor Corporation | Leakage current reduction in a power regulator |
FR2950208B1 (fr) * | 2009-09-17 | 2011-10-14 | St Microelectronics Grenoble 2 | Etage de sortie d'un amplificateur classe a |
US8487706B2 (en) * | 2010-01-25 | 2013-07-16 | Peregrine Semiconductor Corporation | Stacked linear power amplifier with capacitor feedback and resistor isolation |
US8350624B2 (en) | 2010-09-01 | 2013-01-08 | Peregrine Semiconductor Corporation | Amplifiers and related biasing methods and devices |
US8368462B2 (en) | 2010-10-06 | 2013-02-05 | Peregrine Semiconductor Corporation | Method, system, and apparatus for RF switching amplifier |
CN101984703B (zh) * | 2010-11-04 | 2013-07-31 | 新邮通信设备有限公司 | 确定射频远端设备下行功率的方法和装置 |
US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
US9178669B2 (en) | 2011-05-17 | 2015-11-03 | Qualcomm Incorporated | Non-adjacent carrier aggregation architecture |
US9252827B2 (en) | 2011-06-27 | 2016-02-02 | Qualcomm Incorporated | Signal splitting carrier aggregation receiver architecture |
US9154179B2 (en) | 2011-06-29 | 2015-10-06 | Qualcomm Incorporated | Receiver with bypass mode for improved sensitivity |
US12081243B2 (en) | 2011-08-16 | 2024-09-03 | Qualcomm Incorporated | Low noise amplifiers with combined outputs |
US8957733B2 (en) * | 2011-10-27 | 2015-02-17 | Marvell World Trade Ltd. | Systems and methods for performing multi-modal power amplification |
US8400224B1 (en) * | 2011-10-28 | 2013-03-19 | Broadcom Corporation | Programmable low noise amplifier and methods for use therewith |
US8774334B2 (en) | 2011-11-09 | 2014-07-08 | Qualcomm Incorporated | Dynamic receiver switching |
US9172402B2 (en) | 2012-03-02 | 2015-10-27 | Qualcomm Incorporated | Multiple-input and multiple-output carrier aggregation receiver reuse architecture |
US9362958B2 (en) | 2012-03-02 | 2016-06-07 | Qualcomm Incorporated | Single chip signal splitting carrier aggregation receiver architecture |
US9118439B2 (en) | 2012-04-06 | 2015-08-25 | Qualcomm Incorporated | Receiver for imbalanced carriers |
US9154356B2 (en) | 2012-05-25 | 2015-10-06 | Qualcomm Incorporated | Low noise amplifiers for carrier aggregation |
US9867194B2 (en) | 2012-06-12 | 2018-01-09 | Qualcomm Incorporated | Dynamic UE scheduling with shared antenna and carrier aggregation |
US9300420B2 (en) | 2012-09-11 | 2016-03-29 | Qualcomm Incorporated | Carrier aggregation receiver architecture |
US9543903B2 (en) | 2012-10-22 | 2017-01-10 | Qualcomm Incorporated | Amplifiers with noise splitting |
US8928415B2 (en) * | 2012-11-16 | 2015-01-06 | Qualcomm Incorporated | Adjustable gain for multi-stacked amplifiers |
TWI460988B (zh) * | 2012-12-10 | 2014-11-11 | Universal Scient Ind Shanghai | 電子系統、射頻功率放大器及其輸出功率補償方法 |
US8995591B2 (en) | 2013-03-14 | 2015-03-31 | Qualcomm, Incorporated | Reusing a single-chip carrier aggregation receiver to support non-cellular diversity |
US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
US9419560B2 (en) * | 2014-05-23 | 2016-08-16 | Qualcomm Incorporated | Low power multi-stacked power amplifier |
US9438170B2 (en) * | 2014-09-15 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power amplifier |
KR102218047B1 (ko) * | 2015-03-20 | 2021-02-22 | 한국전자통신연구원 | 캐리어 어그리게이션을 위한 송신 장치 |
TW201701595A (zh) * | 2015-06-18 | 2017-01-01 | 力祥半導體股份有限公司 | 發射器、使用該發射器的共模收發器、以及其操作方法 |
US9825597B2 (en) | 2015-12-30 | 2017-11-21 | Skyworks Solutions, Inc. | Impedance transformation circuit for amplifier |
US10177722B2 (en) | 2016-01-12 | 2019-01-08 | Qualcomm Incorporated | Carrier aggregation low-noise amplifier with tunable integrated power splitter |
TWI595745B (zh) * | 2016-03-28 | 2017-08-11 | 立積電子股份有限公司 | 放大器 |
WO2017173119A1 (en) | 2016-04-01 | 2017-10-05 | Skyworks Solutions, Inc. | Multi-mode stacked amplifier |
US10062670B2 (en) | 2016-04-18 | 2018-08-28 | Skyworks Solutions, Inc. | Radio frequency system-in-package with stacked clocking crystal |
US9843293B1 (en) * | 2016-09-16 | 2017-12-12 | Peregrine Semiconductor Corporation | Gate drivers for stacked transistor amplifiers |
US10454432B2 (en) | 2016-12-29 | 2019-10-22 | Skyworks Solutions, Inc. | Radio frequency amplifiers with an injection-locked oscillator driver stage and a stacked output stage |
TWI692935B (zh) | 2016-12-29 | 2020-05-01 | 美商天工方案公司 | 前端系統及相關裝置、積體電路、模組及方法 |
US10277168B2 (en) | 2017-03-06 | 2019-04-30 | Psemi Corporation | Stacked power amplifier power control |
US9960737B1 (en) | 2017-03-06 | 2018-05-01 | Psemi Corporation | Stacked PA power control |
US10515924B2 (en) | 2017-03-10 | 2019-12-24 | Skyworks Solutions, Inc. | Radio frequency modules |
US10461705B2 (en) | 2017-03-27 | 2019-10-29 | Skyworks Solutions, Inc. | Apparatus and methods for oscillation suppression of cascode power amplifiers |
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TWI819256B (zh) * | 2020-12-02 | 2023-10-21 | 瑞昱半導體股份有限公司 | 放大器裝置 |
TWI757068B (zh) * | 2021-01-25 | 2022-03-01 | 瑞昱半導體股份有限公司 | 功率放大器以及功率放大方法 |
US12149216B2 (en) | 2021-02-09 | 2024-11-19 | QuantalRF AG | System and method for adjusting amplifier bias using envelope tracking |
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WO2004075398A1 (en) * | 2003-02-19 | 2004-09-02 | Nujira Ltd. | High efficiency amplification |
CN101065897A (zh) * | 2004-12-28 | 2007-10-31 | 索尼爱立信移动通讯股份有限公司 | 用于无线调制解调器设备的智能rf功率控制 |
US20070285175A1 (en) * | 2004-12-02 | 2007-12-13 | Hyoung-Seok Oh | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
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US7248120B2 (en) * | 2004-06-23 | 2007-07-24 | Peregrine Semiconductor Corporation | Stacked transistor method and apparatus |
US7459969B2 (en) * | 2006-08-11 | 2008-12-02 | Broadcom Corporation | Transmitter power amplifier working at different power supplies |
-
2009
- 2009-04-23 US US12/428,616 patent/US7786807B1/en not_active Expired - Fee Related
-
2010
- 2010-04-14 EP EP10003954.4A patent/EP2244376B1/en active Active
- 2010-04-21 CN CN2010101524097A patent/CN101873104B/zh active Active
- 2010-04-22 TW TW99112736A patent/TWI467917B/zh active
- 2010-08-22 US US12/860,905 patent/US8063706B2/en active Active
-
2011
- 2011-04-14 HK HK11103759.2A patent/HK1149645A1/xx not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004075398A1 (en) * | 2003-02-19 | 2004-09-02 | Nujira Ltd. | High efficiency amplification |
US20070285175A1 (en) * | 2004-12-02 | 2007-12-13 | Hyoung-Seok Oh | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
CN101065897A (zh) * | 2004-12-28 | 2007-10-31 | 索尼爱立信移动通讯股份有限公司 | 用于无线调制解调器设备的智能rf功率控制 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103620955A (zh) * | 2011-04-19 | 2014-03-05 | 高通股份有限公司 | 具有改善的效率和输出功率的rf功率放大器 |
CN104521138B (zh) * | 2012-08-08 | 2017-07-25 | 高通股份有限公司 | 多共源共栅放大器偏置技术 |
CN103095227A (zh) * | 2012-12-28 | 2013-05-08 | 成都泰格微波技术股份有限公司 | WiMAX射频前端双向放大器 |
CN103095227B (zh) * | 2012-12-28 | 2015-07-01 | 成都泰格微波技术股份有限公司 | WiMAX射频前端双向放大器 |
US9148088B1 (en) | 2014-05-20 | 2015-09-29 | Advanced Semiconductor Engineering Inc. | RF stacked power amplifier bias method |
CN105788208A (zh) * | 2016-03-01 | 2016-07-20 | 秦铭海 | 一种用于医疗的无线模块 |
CN111434034A (zh) * | 2017-12-15 | 2020-07-17 | 华为技术有限公司 | 用于光通信的通带频率可调的差分共源共栅放大器 |
CN108134603A (zh) * | 2017-12-30 | 2018-06-08 | 杭州谱育科技发展有限公司 | 四极杆电压控制电路及方法 |
CN108134603B (zh) * | 2017-12-30 | 2023-11-10 | 杭州谱育科技发展有限公司 | 四极杆电压控制电路及方法 |
CN110350929A (zh) * | 2018-04-04 | 2019-10-18 | 三星电子株式会社 | 射频集成电路、接收器和控制接收器的方法 |
US11515843B2 (en) | 2018-04-04 | 2022-11-29 | Samsung Electronics Co., Ltd. | Radio frequency (RF) integrated circuit performing signal amplification operation to support carrier aggregation and receiver including the same |
CN114629454A (zh) * | 2020-12-08 | 2022-06-14 | 瑞昱半导体股份有限公司 | 放大器装置 |
Also Published As
Publication number | Publication date |
---|---|
US7786807B1 (en) | 2010-08-31 |
US8063706B2 (en) | 2011-11-22 |
TW201105028A (en) | 2011-02-01 |
TWI467917B (zh) | 2015-01-01 |
CN101873104B (zh) | 2012-12-12 |
EP2244376B1 (en) | 2017-04-12 |
HK1149645A1 (en) | 2011-10-07 |
US20100315168A1 (en) | 2010-12-16 |
EP2244376A1 (en) | 2010-10-27 |
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