CN101871103A - Solar spectrum high-temperature selective absorbing film and manufacturing method thereof - Google Patents
Solar spectrum high-temperature selective absorbing film and manufacturing method thereof Download PDFInfo
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- CN101871103A CN101871103A CN 200910037415 CN200910037415A CN101871103A CN 101871103 A CN101871103 A CN 101871103A CN 200910037415 CN200910037415 CN 200910037415 CN 200910037415 A CN200910037415 A CN 200910037415A CN 101871103 A CN101871103 A CN 101871103A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910017116 Fe—Mo Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 61
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 38
- 238000010521 absorption reaction Methods 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 238000010849 ion bombardment Methods 0.000 claims description 10
- 238000005202 decontamination Methods 0.000 claims description 5
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- 238000004140 cleaning Methods 0.000 claims description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
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Abstract
The invention discloses a solar spectrum high-temperature selective absorbing film. The film comprises a substrate, and a reflecting layer, an absorbing layer and an antireflection layer which are arranged on the substrate from the inside to the outside in turn, wherein the reflecting layer is of an Fe-Mo alloy; the absorbing layer is of an Mo-Al2O3 alloy; the antireflection layer is of Al2O3; and the absorbing layer comprises three layers of which the atomic percentage content of Mo is reduced gradually from an inner layer to a surface layer. The invention also discloses a manufacturing method for the film. The method comprises the following steps of: treating the surface of the substrate; sputtering the substrate to form an Fe-Mo alloy reflecting layer; sputtering to form an Mo-Al2O3 alloy absorbing layer; and sputtering to obtain an AlO3 film. The absorbing film of the invention has the characteristics of excellent infrared reflection effect, contribution to reducing emissivity and greatly increased practicability.
Description
Technical field
The invention belongs to thin film technique and thin-film material field, be specifically related to a kind of solar spectrum high-temperature selective absorbing film and manufacture method thereof.
Background technology
Structure according to principle that absorbs sunlight and coating is different, and the solar spectrum high-temperature selective absorber coatings mainly is divided into coated semiconductor, interference of light coating, porous coating and metal-ceramic coating four classes.Common semiconductor material has silicon (Si), germanium (Ge), black chromium (CrxOy), black nickel (NiS-ZnS), cupric oxide black (CuxOy) and ferric oxide (Fe
3O
4) etc.; Interference of light coating is made up of deielectric-coating and absorbing composite membrane, metal substrate or the bottom film of non-absorption, as Al
2O
3-Mox-Al
2O
3(AMA) trilamellar membrane, AlN-Al/Al eight tunics etc.; Porous coating is by the pattern on control coating surface and structure, makes the size of surface discontinuity suitable with the visible spectrum peak value, thereby visible light is played the trap effect, and long-wave radiation is had fine reflex action; Cermet coating is according to effective medium theory, utilizes metallics finely divided in parent, and the different wave length level photon of visible light is produced repeatedly scattering and internal reflection and it is absorbed, and the eutectoid coating of metallics and oxide compound is as Al-Al
2O
3, Mo-Al
2O
3, Mo-SiO
2, Ti-TiO
2, W-Al
2O
3, Ni-Al
2O
3, Co-Al
2O
3, Au-Al
2O
3Etc. coating.
Existing solar spectrum high-temperature selective mostly is four-layer structure, the first layer is a base material, the second layer is for being the metal reflection layer, the 3rd layer is light absorbing zone, and the 4th layer is the light antireflective, and this four-layer structure superposes successively, because mostly being single metal M o, Ni, Cu or Fe, the reflecting layer cause the associativity between itself and base material and the absorption layer good inadequately, the infrared reflectance of the absorbing film of this structure is lower simultaneously, cause emittance to increase, so practicality has to be strengthened.
Summary of the invention
The solar spectrum high-temperature selective absorbing film of the object of the present invention is to provide a kind of associativity of interlayer good, practicality being strengthened.
The technical solution adopted for the present invention to solve the technical problems is: a kind of solar spectrum high-temperature selective absorbing film, comprise base material, and be successively set on reflecting layer, absorption layer and anti-reflection layer on the base material from the inside to the outside, and described reflecting layer is the Fe-Mo alloy, described absorption layer is Mo-Al
2O
3Alloy, described anti-reflection layer are Al
2O
3, described absorption layer comprises three layers, is progressively reduced by the atom percentage content of nexine to top layer Mo, and the Mo content of nexine is 80-90%, and the Mo content in middle layer is 50-60%, and the Mo content on top layer is 20-40%.
The thickness in described reflecting layer is 100-200nm.The thickness of described absorption layer is 150-200nm.The thickness of described anti-reflection layer is 30-80nm.
Another object of the present invention is to provide a kind of manufacture method of solar spectrum high-temperature selective absorbing film, and the absorbing film that makes according to this method has that bonding force is strong, the advantage of high-absorbility and low-launch-rate.
The technical solution adopted for the present invention to solve the technical problems is: a kind of manufacture method of solar spectrum high-temperature selective absorbing film, and performing step is as follows:
A), to the surface of base material polish, decontamination and cleaning, base material is placed the center of sputter stove and makes its rotation;
B), close the sputter stove, vacuumize, in the sputter stove, charge into argon gas, and on base material, apply bias voltage, earlier base material is carried out plasma and cleans, open Fe target and Mo target afterwards, sputter forms Fe-Mo alloy reflecting layer on base material.
C), simultaneously in the sputter stove, pour oxygen and argon gas, close the Fe target, open Mo target and Al target base material is carried out ion bombardment, form Mo-Al at the reflecting layer surface sputtering
2O
3The alloy absorption layer;
D), simultaneously in the sputter stove, pour oxygen and argon gas, close Fe target and Mo target, open the Al target base material is carried out ion bombardment, obtain Al at the absorption layer surface sputtering
2O
3Anti-reflection layer.
The processing condition of described step b) are as follows: the electric current of Fe target is 35A, and voltage is 411V, and the electric current of Mo target is 40A, and voltage is 450V, and the substrate bias on the base material is 270-300V, and the vacuum tightness of sputter stove is 0.10Pa, and depositing time is set to 8-10min.
The processing condition of described step c) are as follows: vacuum tightness is 0.16-0.2Pa, and the substrate bias on the base material is 200-250V, and depositing time is 10-15min.
The processing condition of described step d) are as follows: the electric current of Al target is 38A, and voltage is 320V, and vacuum tightness is 0.25Pa, and depositing time is 5-8min.
The invention has the beneficial effects as follows: adopted the Fe-Mo alloy as the reflecting layer, strengthen the bonding force between base material and the absorption layer, and had good properties of infrared reflection and non-proliferation function, and had excellent more infrared external reflection effect, be beneficial to the reduction emittance, Mo-Al
2O
3The absorption layer of alloy is the three-decker that Mo content progressively reduces, and forms many interfaces absorption layer, make the ultraviolet of solar spectrum, visible and infrared light through multiple reflection, refraction, interference and absorption after, the coated absorption of the radiation more than 97% changes into heat, Al
2O
3Anti-reflection layer can further improve the specific absorption of rete, and that solar spectrum high-temperature selective absorbing film of the present invention has is high temperature resistant, antioxidant property is strong, unreactiveness and microtexture stable properties.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the diagrammatic cross-section of solar selectively absorbing coating of the present invention;
Fig. 2 is the diagrammatic cross-section of employed three target sputtering equipments of preparation absorbing film.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
With reference to shown in Figure 1, a kind of solar spectrum high-temperature selective absorbing film comprises base material 1, and described base material 1 can be metal, plastics or ceramic material, as a kind of specific embodiment, the elite stainless steel metal pipe of using, base material 1 is provided with reflecting layer 2, and reflecting layer 2 is provided with absorption layer 3, absorption layer 3 is provided with anti-reflection layer 4, three layers of sputter stack successively, described reflecting layer 2 is the Fe-Mo alloy, described anti-reflection layer is Al
2O
3, described absorption layer 3 is Mo-Al
2O
3Alloy comprises totally three layers on high metal content layer, middle metal content layer and low-metal content layer, is progressively reduced by the atom percentage content of nexine to top layer Mo, and wherein nexine Mo content is 80%, and middle layer Mo content is 50%, and top layer Mo content is 20%.
As another kind of embodiment, the atom percentage content of three layers of Mo is respectively in the absorption layer 3: nexine Mo content is 90%, and middle layer Mo content is 60%, and top layer Mo content is 40%.
As another embodiment, the atom percentage content of three layers of Mo is respectively in the absorption layer 3: nexine Mo content is 80%, and middle layer Mo content is 50-60%, and top layer Mo content is 20-40%.
The thickness of each layer of the present invention is as follows respectively: the thickness in reflecting layer is 100-200nm, by depositing the reflecting layer of such thickness, luminous reflectance is strengthened; The thickness of absorption layer is 150-200nm, can strengthen the absorption to sun power like this; The thickness of anti-reflection layer is 30-80nm, though the thickness of this scope can make optical radiation see through, can interfere the absorption that promotes sun power by absorbed inside and phase compensation.
With reference to shown in Figure 2, absorbing film of the present invention can use three target sputtering equipments to prepare, this equipment comprises airtight sputter stove 7, be evenly distributed with three columniform target electrodes on the sidewall in the sputter stove 7, it is Fe target 8, Mo target 9 and Al target 10, the axis of any two target electrodes is 60 ° angle, three target electrodes join as negative electrode with power supply respectively and optionally, sputter stove and power supply are connected to form plus earth, the wall of sputter stove 7 is provided with two inlet pipe, the center of sputter stove 7 is provided with the rotation movements and postures of actors 11 around the rotation of sputter stove central shaft, be used to place base material 1, base material 1 is realized self rotation when can rotate on the circular orbit of the rotation movements and postures of actors 11, be convenient to even plated film, different voltages are set between target electrode and base material, from inlet pipe 5 and inlet pipe 6, can feed argon gas and oxygen respectively.
As first embodiment of manufacture method of the present invention, technical process is as follows:
A), to the stainless steel metal tube-surface as base material polish, decontamination, acetone ultrasonic cleaning and alcohol rinsing, then base material is placed on the rotation movements and postures of actors 11, base material keeps rotation in the revolution on the rotation movements and postures of actors 11.
B), close the sputter stove, vacuumize, after vacuum tightness reaches certain requirement, in sputter stove 7, charge into argon gas from inlet pipe 5, and on base material, apply bias voltage, earlier base material is carried out plasma and cleans.Open Fe target 8 and Mo target 9 afterwards, when argon ion bombardment target surperficial, Fe and Mo atoms metal and atomic group are sputtered out, and it is the Fe-Mo alloy reflecting layer of 50-60% that sputter forms Mo content.The processing condition in this stage can be provided with as follows; The electric current of Fe target 8 is 35A, and voltage is 411V; The electric current of Mo target 9 is 40A, and voltage is 450V; Substrate bias is 270V; Vacuum tightness is 0.10Pa, and depositing time is 10min.
C), in sputter stove 7, charge into argon gas, in sputter stove 7, charge into oxygen from inlet pipe 6 simultaneously from inlet pipe 5.Close the Fe target, open Mo target and Al target, at the reflecting layer of Fe-Mo alloy 2 surface sputtering one deck Mo-Al
2O
3Metal forms gradient absorption layer 3, at this moment, the Mo metal not with oxygen reaction, and Al and oxygen reaction generation Al
2O
3, two kinds of material common deposited form Mo-Al on base material
2O
3Film, the content of Mo metal is controlled by target current, voltage, oxygen partial pressure are set, the thickness of film is controlled by control sputter rate and time, the flow of control oxygen can the controlled oxidation thing growing amount, feed the excess of oxygen total overall reaction and generate oxidate to base material, thereby finish the preparation of compound coating.Vacuum degree control in this stage sputter stove 7 is at 0.16Pa, and substrate bias is set to 200V, and depositing time is 10min.
D), simultaneously in the sputter stove, charge into oxygen and argon gas, close Fe target and Mo target, open the Al target base material is carried out ion bombardment, adopts method sputter same as described above to obtain the complete transparent Al of one deck
2O
3Film.The electric current of this stage A l target is 38A, and voltage is 320V, and vacuum tightness is 0.25Pa, and depositing time is 8min.
As second embodiment of manufacture method of the present invention, technical process is as follows:
A), to the stainless steel metal tube-surface as base material polish, decontamination, acetone ultrasonic cleaning and alcohol rinsing, then base material is placed on the rotation movements and postures of actors 11, base material keeps rotation in the revolution on the rotation movements and postures of actors 11.
B), close the sputter stove, vacuumize, after vacuum tightness reaches certain requirement, in sputter stove 7, charge into argon gas from inlet pipe 5, and on base material, apply bias voltage, earlier base material is carried out plasma and cleans.Open Fe target 8 and Mo target 9 afterwards, when argon ion bombardment target surperficial, Fe and Mo atoms metal and atomic group are sputtered out, and it is the Fe-Mo alloy reflecting layer of 50-60% that sputter forms Mo content.The processing condition in this stage can be provided with as follows: the electric current of Fe target 8 is 35A, and voltage is 411V; The electric current of Mo target 9 is 40A, and voltage is 450V; Substrate bias is 300V; Vacuum tightness is 0.10Pa, and depositing time is 8min.
C), in sputter stove 7, charge into argon gas, in sputter stove 7, charge into oxygen from inlet pipe 6 simultaneously from inlet pipe 5.Close the Fe target, open Mo target and Al target, at the reflecting layer of Fe-Mo alloy 2 surface sputtering one deck Mo-Al
2O
3Metal forms gradient absorption layer 3, at this moment, the Mo metal not with oxygen reaction, and Al and oxygen reaction generation Al
2O
3, two kinds of material common deposited form Mo-Al on base material
2O
3Film, the content of Mo metal is controlled by target current, voltage, oxygen partial pressure are set, the thickness of film is controlled by control sputter rate and time, the flow of control oxygen can the controlled oxidation thing growing amount, feed the excess of oxygen total overall reaction and generate oxidate to base material, thereby finish the preparation of compound coating.Vacuum degree control in this stage sputter stove 7 is at 0.2Pa, and substrate bias is set to 250V, and depositing time is set to 15min.
D), simultaneously in the sputter stove, charge into oxygen and argon gas, close Fe target and Mo target, open the Al target base material is carried out ion bombardment, adopts method sputter same as described above to obtain the complete transparent Al of one deck
2O
3Film.The electric current of this stage A l target is 38A, and voltage is 320V, and vacuum tightness is 0.25Pa, and depositing time is 5min.
As the 3rd embodiment of manufacture method of the present invention, technical process is as follows:
A), to the stainless steel metal tube-surface as base material polish, decontamination, acetone ultrasonic cleaning and alcohol rinsing, then base material is placed on the rotation movements and postures of actors 11, base material keeps rotation in the revolution on the rotation movements and postures of actors 11.
B), close the sputter stove, vacuumize, after vacuum tightness reaches certain requirement, in sputter stove 7, charge into argon gas from inlet pipe 5, and on base material, apply bias voltage, earlier base material is carried out plasma and cleans.Open Fe target 8 and Mo target 9 afterwards, when argon ion bombardment target surperficial, Fe and Mo atoms metal and atomic group are sputtered out, and it is the Fe-Mo alloy reflecting layer of 50-60% that sputter forms Mo content.The processing condition in this stage can be provided with as follows: the electric current of Fe target 8 is 35A, and voltage is 411V; The electric current of Mo target 9 is 40A, and voltage is 450V; Substrate bias is 285V; Vacuum tightness is 0.10Pa, and depositing time is 9min.
C), in sputter stove 7, charge into argon gas, in sputter stove 7, charge into oxygen from inlet pipe 6 simultaneously from inlet pipe 5.Close the Fe target, open Mo target and Al target, at the reflecting layer of Fe-Mo alloy 2 surface sputtering one deck Mo-Al
2O
3Metal forms gradient absorption layer 3, at this moment, the Mo metal not with oxygen reaction, and Al and oxygen reaction generation Al
2O
3, two kinds of material common deposited form Mo-Al on base material
2O
3Film, the content of Mo metal is controlled by target current, voltage, oxygen partial pressure are set, the thickness of film is controlled by control sputter rate and time, the flow of control oxygen can the controlled oxidation thing growing amount, feed the excess of oxygen total overall reaction and generate oxidate to base material, thereby finish the preparation of compound coating.Vacuum degree control in this stage sputter stove 7 is at 0.18Pa, and substrate bias is set to 225V, and depositing time is 12.5min.
D), simultaneously in the sputter stove, charge into oxygen and argon gas, close Fe target and Mo target, open the Al target base material is carried out ion bombardment, adopts method sputter same as described above to obtain the complete transparent Al of one deck
2O
3Film.The electric current of this stage A l target is 38A, and voltage is 320V, and vacuum tightness is 0.25Pa, depositing time 6.5min.
The present invention has the selection absorption characteristic to the solar spectrum excellence, records its average absorption rate 〉=97% at 200-2500nm; Emittance≤7% (room temperature).Anneal respectively in air He under the vacuum condition, tested the thermostability of differing temps and time, the result is as follows:
Anneal in air, temperature is 750 ℃, 2 hours time, and its thermostability is constant.
Annealing in a vacuum, temperature is 600 ℃, 3 hours time, it is stable that its specific absorption and emittance all keep.
Anneal in air, temperature is 500 ℃, 48 hours time, and its optical property does not have degradation phenomena significantly yet.
Absorbing film of the present invention adopts the Fe-Mo alloy as the reflecting layer, has strengthened the bonding force between base material and the absorbing film, and has excellent more infrared external reflection effect, is beneficial to the reduction emittance.Specific refractory power according to each rete is different with optical extinction coefficient, not only reflecting layer, absorption layer and anti-reflection layer is designed to gradient film, and further with Mo-Al
2O
3Absorption layer is designed to trilaminar gradient-structure, after making the ultraviolet of solar spectrum, visible and infrared light (200-2500nm) through multiple reflection, refraction, interference and absorption, the coated absorption of radiation more than 97%, change into heat, obtain that a kind of bonding force is strong, the solar selectively absorbing coating of high-absorbility, low-launch-rate.
The foregoing description is illustrative principle of the present invention and effect thereof only; and the embodiment of part utilization, for the person of ordinary skill of the art, under the prerequisite that does not break away from the invention design; can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (8)
1. a solar spectrum high-temperature selective absorbing film comprises base material, and is successively set on reflecting layer, absorption layer and anti-reflection layer on the base material from the inside to the outside, it is characterized in that: described reflecting layer is the Fe-Mo alloy, and described absorption layer is Mo-Al
2O
3Alloy, described anti-reflection layer are Al
2O
3, described absorption layer comprises three layers, is progressively reduced by the atom percentage content of nexine to top layer Mo, and the Mo content of nexine is 80-90%, and the Mo content in middle layer is 50-60%, and the Mo content on top layer is 20-40%.
2. a kind of solar spectrum high-temperature selective absorbing film according to claim 1 is characterized in that, the thickness in described reflecting layer is 100-200nm.
3. a kind of solar spectrum high-temperature selective absorbing film according to claim 1 is characterized in that, the thickness of described absorption layer is 150-200nm.
4. a kind of solar spectrum high-temperature selective absorbing film according to claim 1 is characterized in that, the thickness of described anti-reflection layer is 30-80nm.
5. manufacture method of solar spectrum high-temperature selective absorbing film according to claim 1 is characterized in that performing step is as follows:
A), to the surface of base material polish, decontamination and cleaning, base material is placed the center of sputter stove and makes its rotation;
B), close the sputter stove, vacuumize, in the sputter stove, charge into argon gas, and on base material, apply bias voltage, earlier base material is carried out plasma and cleans, open Fe target and Mo target afterwards, sputter forms Fe-Mo alloy reflecting layer on base material;
C), simultaneously in the sputter stove, pour oxygen and argon gas, close the Fe target, open Mo target and Al target base material is carried out ion bombardment, form Mo-Al at the reflecting layer surface sputtering
2O
3The alloy absorption layer;
D), simultaneously in the sputter stove, pour oxygen and argon gas, close Fe target and Mo target, open the Al target base material is carried out ion bombardment, obtain Al at the absorption layer surface sputtering
2O
3Anti-reflection layer.
6. according to the manufacture method of the described solar spectrum high-temperature selective absorbing film of claim 5, it is characterized in that, the processing condition of described step b) are as follows: the electric current of Fe target is 35A, voltage is 411V, the electric current of Mo target is 40A, and voltage is 450V, and the substrate bias on the base material is 270-300V, the vacuum tightness of sputter stove is 0.10Pa, and depositing time is set to 8-10min.
7. according to the manufacture method of the described solar spectrum high-temperature selective absorbing film of claim 5, it is characterized in that the processing condition of described step c) are as follows: vacuum tightness is 0.16-0.2Pa, and the substrate bias on the base material is 200-250V, and depositing time is 10-15min.
8. according to the manufacture method of the described solar spectrum high-temperature selective absorbing film of claim 5, it is characterized in that the processing condition of described step d) are as follows: the electric current of Al target is 38A, and voltage is 320V, and vacuum tightness is 0.25Pa, and depositing time is 5-8min.
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| CN 200910037415 CN101871103A (en) | 2009-02-26 | 2009-02-26 | Solar spectrum high-temperature selective absorbing film and manufacturing method thereof |
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|---|---|---|---|
| CN 200910037415 CN101871103A (en) | 2009-02-26 | 2009-02-26 | Solar spectrum high-temperature selective absorbing film and manufacturing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102032696A (en) * | 2011-01-11 | 2011-04-27 | 皇明太阳能股份有限公司 | Anti-overheating film for solar thermal collector |
| CN102268673A (en) * | 2011-06-07 | 2011-12-07 | 广东联塑科技实业有限公司 | Method for preparing selective absorption coating of plastic solar thermal collector |
| CN102358937A (en) * | 2011-11-10 | 2012-02-22 | 中国航天科技集团公司第五研究院第五一○研究所 | Continuous preparation method of cermet conposite membrane with large-area flexible metal substrate and high heat absorption |
| CN102409310A (en) * | 2011-11-10 | 2012-04-11 | 中国航天科技集团公司第五研究院第五一○研究所 | Method for continuously coating gradient cermet film by flexible metal substrate double target co-sputtering |
| CN102734963A (en) * | 2012-06-29 | 2012-10-17 | 苏州嘉言能源设备有限公司 | Trench type solar high temperature absorbing coating |
| CN104654639A (en) * | 2014-12-18 | 2015-05-27 | 福建新越金属材料科技有限公司 | Sub-absorbing layer with gradually-changed composite coating form and preparation method thereof |
| CN115704086A (en) * | 2021-08-12 | 2023-02-17 | 中国科学院上海硅酸盐研究所 | Ion homopolar sputtering coating device and method |
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2009
- 2009-02-26 CN CN 200910037415 patent/CN101871103A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102032696A (en) * | 2011-01-11 | 2011-04-27 | 皇明太阳能股份有限公司 | Anti-overheating film for solar thermal collector |
| CN102032696B (en) * | 2011-01-11 | 2013-06-12 | 皇明太阳能股份有限公司 | Anti-overheating film for solar thermal collector |
| CN102268673A (en) * | 2011-06-07 | 2011-12-07 | 广东联塑科技实业有限公司 | Method for preparing selective absorption coating of plastic solar thermal collector |
| CN102358937A (en) * | 2011-11-10 | 2012-02-22 | 中国航天科技集团公司第五研究院第五一○研究所 | Continuous preparation method of cermet conposite membrane with large-area flexible metal substrate and high heat absorption |
| CN102409310A (en) * | 2011-11-10 | 2012-04-11 | 中国航天科技集团公司第五研究院第五一○研究所 | Method for continuously coating gradient cermet film by flexible metal substrate double target co-sputtering |
| CN102734963A (en) * | 2012-06-29 | 2012-10-17 | 苏州嘉言能源设备有限公司 | Trench type solar high temperature absorbing coating |
| CN104654639A (en) * | 2014-12-18 | 2015-05-27 | 福建新越金属材料科技有限公司 | Sub-absorbing layer with gradually-changed composite coating form and preparation method thereof |
| CN115704086A (en) * | 2021-08-12 | 2023-02-17 | 中国科学院上海硅酸盐研究所 | Ion homopolar sputtering coating device and method |
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