[go: up one dir, main page]

CN101866917B - Active element array substrate and repair method thereof - Google Patents

Active element array substrate and repair method thereof Download PDF

Info

Publication number
CN101866917B
CN101866917B CN2010101889575A CN201010188957A CN101866917B CN 101866917 B CN101866917 B CN 101866917B CN 2010101889575 A CN2010101889575 A CN 2010101889575A CN 201010188957 A CN201010188957 A CN 201010188957A CN 101866917 B CN101866917 B CN 101866917B
Authority
CN
China
Prior art keywords
electrode
patch cord
protection element
electrostatic protection
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2010101889575A
Other languages
Chinese (zh)
Other versions
CN101866917A (en
Inventor
庄文奇
彭中宏
林东村
郭雅翎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AUO Corp
Original Assignee
AU Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AU Optronics Corp filed Critical AU Optronics Corp
Priority to CN2010101889575A priority Critical patent/CN101866917B/en
Publication of CN101866917A publication Critical patent/CN101866917A/en
Application granted granted Critical
Publication of CN101866917B publication Critical patent/CN101866917B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses an active element array substrate, which comprises a substrate, a plurality of pixels, a plurality of signal wires and a repair structure. The substrate is provided with a display area and a peripheral area. Pixel arrays are arranged on the display area of the substrate. The signal wires are electrically connected with the pixels, and the signal wires extend to the peripheral area from the display area respectively. The repair structure is collocated in the peripheral area, and the repair structure comprises a first repair wire, a second repair wire, an electrostatic release lead and an electrostatic protection element. The first repair wire is staggered with one end of the signal wire, and the first repair wire is electrically floated. The electrostatic protection element is connected between the second repair wire and the electrostatic release lead, and the electrostatic protection element is superposed and electrically insulated with the first repair wire.

Description

主动元件阵列基板及其修补方法Active element array substrate and repair method thereof

技术领域 technical field

本发明是有关于一种阵列基板及其修补方法,且特别是有关于一种主动元件阵列基板及其修补方法。  The present invention relates to an array substrate and its repair method, and in particular to an active element array substrate and its repair method. the

背景技术 Background technique

平面显示器的运作方式是以两组相互垂直的信号线来控制排列成阵列的各像素(pixel),而达成显像的目的。在各种显像控制模式中,最常使用的是扫描线(scan line)与数据线(data line)的设计,这些扫描线与数据线彼此垂直,且定义出多个像素。各扫描线依序地被导通以开启或关闭对应的开关元件,以使各数据线所传送的信号能够写入像素中,从而改变对应的像素的状态,并达成控制显示画面的目的。  The operation mode of the flat panel display is to control each pixel (pixel) arranged in an array by two sets of signal lines perpendicular to each other, so as to achieve the purpose of displaying images. Among various display control modes, the design of scan lines and data lines is most commonly used, and these scan lines and data lines are perpendicular to each other and define a plurality of pixels. Each scanning line is sequentially turned on to turn on or turn off the corresponding switching element, so that the signal transmitted by each data line can be written into the pixel, thereby changing the state of the corresponding pixel, and achieving the purpose of controlling the display screen. the

虽然平面显示器技术已趋成熟,但显示面板的组成元件,如主动元件阵列基板,在制造过程中难免会产生一些瑕疵(defect)。举例来说,主动元件阵列基板上的扫描线与数据线因其长度很长,故容易发生断线的情形。当扫描线与数据线发生断线时,会导致一部分的像素无法动作(线缺陷),故必须设法修补断线。此外,若仅依赖改善工艺技术来实现零瑕疵率是非常困难的,因此,主动元件阵列基板的修补结构以及瑕疵修补技术就变得相当重要。在现有技术中,主动元件阵列基板的瑕疵修补通常采用激光熔接(laser welding)及/或激光切割(laser cutting)等方式进行。  Although the flat panel display technology has matured, the components of the display panel, such as the active device array substrate, inevitably have some defects during the manufacturing process. For example, the scanning lines and data lines on the active device array substrate are very long, so they are prone to disconnection. When the scan line and the data line are disconnected, some pixels will not be able to operate (line defect), so it is necessary to try to repair the disconnection. In addition, it is very difficult to achieve zero defect rate only by improving the process technology. Therefore, the repair structure and defect repair technology of the active device array substrate become very important. In the prior art, the defect repair of the active device array substrate is usually performed by means of laser welding and/or laser cutting. the

一般来说,为了能迅速地修补断线,主动元件阵列基板上会预留有一条以上的修补线,在正常情况下,修补线会与信号线交错而具有焊接点,且修补线与信号线电性绝缘。当信号线发生开路瑕疵(open defect)而断线时,可将此受损的信号线的两端分别经由焊接点而与修补线熔接,使受损的信号线经由修补线维持电导通的状态,以使像素正常运作。  Generally speaking, in order to quickly repair broken wires, more than one repair line will be reserved on the active element array substrate. Under normal circumstances, the repair line will intersect with the signal line to have soldering points, and the repair line and the signal line Electrically insulated. When the signal line is broken due to an open defect, the two ends of the damaged signal line can be welded to the repair line through the welding point, so that the damaged signal line can maintain electrical continuity through the repair line , for the pixel to function properly. the

换句话说,在正常情况下,修补线为电性浮置且与信号线之间保持电性绝缘,而仅有在信号线发生断线时,修补线才会藉由激光熔接等方式通过焊接点 与信号线电性连接,以维持信号线的电导通。然而,值得注意的是,信号线与修补线极容易受到静电放电效应(electro static discharge,ESD)的影响,导致信号线与修补线有短路的现象发生。如此一来,会影响主动元件阵列基板的显示质量,甚至导致主动元件阵列基板必须报废。  In other words, under normal circumstances, the repair line is electrically floating and electrically insulated from the signal line, and only when the signal line is disconnected, the repair line will be welded by laser welding or the like. The point is electrically connected with the signal line to maintain the electrical conduction of the signal line. However, it is worth noting that the signal line and the repair line are extremely susceptible to electrostatic discharge (ESD), resulting in a short circuit between the signal line and the repair line. In this way, the display quality of the active device array substrate will be affected, and even the active device array substrate must be scrapped. the

发明内容 Contents of the invention

本发明提供一种主动元件阵列基板,使信号线与修补线不易受到静电放电效应影响而具有良好的元件特性。  The invention provides an active element array substrate, which makes the signal line and the repair line not easily affected by the electrostatic discharge effect and has good element characteristics. the

本发明另提供一种适用于前述的主动元件阵列基板的修补方法,以对受损的信号线进行修补,使像素能正常运作。  The present invention further provides a repairing method suitable for the above-mentioned active device array substrate to repair the damaged signal lines so that the pixels can operate normally. the

本发明提出一种主动元件阵列基板,其包括一基板、多个像素、多条信号线以及一修补结构。基板具有一显示区以及一外围区。像素阵列排列于基板的显示区上。信号线与像素电性连接,且各信号线分别从显示区延伸至外围区。修补结构配置于外围区,修补结构包括一第一修补线、一第二修补线、一静电释放导线以及一静电保护元件。第一修补线与信号线的其中一端交错,且第一修补线为电性浮置。静电保护元件连接于第二修补线与静电释放导线之间,静电保护元件与第一修补线重叠且彼此电性绝缘。  The invention provides an active device array substrate, which includes a substrate, a plurality of pixels, a plurality of signal lines and a repair structure. The substrate has a display area and a peripheral area. The pixel array is arranged on the display area of the substrate. The signal lines are electrically connected to the pixels, and each signal line extends from the display area to the peripheral area. The repairing structure is arranged in the peripheral area, and the repairing structure includes a first repairing line, a second repairing line, an electrostatic discharge wire and an electrostatic protection element. The first repairing line intersects with one end of the signal line, and the first repairing line is electrically floating. The electrostatic protection element is connected between the second repairing wire and the electrostatic discharge wire, and the electrostatic protection element overlaps with the first repairing wire and is electrically insulated from each other. the

本发明另提出一种修补方法,适于修补上述的主动元件阵列基板,当其中一条信号线发生开路瑕疵时,修补方法包括以下步骤。将第一修补线与具有开路瑕疵的信号线的其中一端焊接。于静电保护元件与第一修补线重叠处,将静电保护元件与第一修补线焊接,其中第二修补线通过静电保护元件以及第一修补线与具有开路瑕疵的信号线电性连接。  The present invention further proposes a repairing method, which is suitable for repairing the above-mentioned active device array substrate. When an open defect occurs in one of the signal lines, the repairing method includes the following steps. Solder the first repair wire to one end of the signal wire with the open defect. Where the electrostatic protection element overlaps with the first repair line, the electrostatic protection element is welded to the first repair line, wherein the second repair line is electrically connected to the signal line with an open defect through the electrostatic protection element and the first repair line. the

本发明提出另一种主动元件阵列基板,其包括一基板、多个像素、多条信号线以及一修补结构。基板具有一显示区以及一外围区。像素阵列排列于基板的显示区上。信号线与像素电性连接,且各信号线分别从显示区延伸至外围区,其中一条信号线具有开路瑕疵。修补结构配置于外围区,修补结构包括一第一修补线、一第二修补线、一静电释放导线以及一静电保护元件。第一修补线与信号线的其中一端交错,且第一修补线为电性浮置。静电保护元件电性连接于第二修补线与静电释放导线之间,且静电保护元件与第一修补线重叠且彼此电性绝缘,其中第一修补线与具有开路瑕疵的信号线的其中一端具有至少一 焊接点,静电保护元件与第一修补线的重叠处具有至少一焊接点,以使得第二修补线通过静电保护元件以及第一修补线与具有开路瑕疵的信号线电性连接。  The present invention provides another active device array substrate, which includes a substrate, a plurality of pixels, a plurality of signal lines and a repair structure. The substrate has a display area and a peripheral area. The pixel array is arranged on the display area of the substrate. The signal lines are electrically connected to the pixels, and each signal line extends from the display area to the peripheral area, and one of the signal lines has an open defect. The repairing structure is arranged in the peripheral area, and the repairing structure includes a first repairing line, a second repairing line, an electrostatic discharge wire and an electrostatic protection element. The first repairing line intersects with one end of the signal line, and the first repairing line is electrically floating. The electrostatic protection element is electrically connected between the second repairing line and the electrostatic discharge wire, and the electrostatic protection element overlaps with the first repairing line and is electrically insulated from each other, wherein the first repairing line and one end of the signal line having an open defect have a There is at least one welding point, and there is at least one welding point at the overlap between the electrostatic protection component and the first repairing line, so that the second repairing line is electrically connected to the signal line having an open circuit defect through the electrostatic protection component and the first repairing line. the

本发明提出又一种主动元件阵列基板,其包括一基板、多个像素、多条信号线以及一修补结构。基板具有一显示区以及一外围区。像素阵列排列于基板的显示区上。信号线与像素电性连接,且各信号线分别从显示区延伸至外围区,其中一条信号线具有开路瑕疵。修补结构配置于外围区,修补结构包括一第一修补线、一第二修补线、一静电释放导线以及一静电保护元件。第一修补线与信号线的其中一端交错,且第一修补线为电性浮置。静电保护元件电性连接于第二修补线与静电释放导线之间,其中静电保护元件包括多个彼此串接的二极管,各二极管包括一第一电极、一第二电极、一与第二电极电性连接的控制电极以及一半导体层,半导体层位于控制电极上方,并连接于第一电极与第二电极之间,未与第二电极电性连接的其中一个第一电极与静电释放导线电性连接,而未与第一电极电性连接的其中一个第二电极与第二修补线电性连接,且第一修补线与其中一个第二电极重叠。其中第一修补线与具有开路瑕疵的信号线其中一端交错处、第二电极与第一修补线重叠处、以及部分控制电极与部分第二电极重叠处皆具有至少一焊接点,以使第二修补线通过部分控制电极、部分第二电极以及第一修补线与具有开路瑕疵的信号线电性连接。  The present invention proposes yet another active device array substrate, which includes a substrate, a plurality of pixels, a plurality of signal lines and a repair structure. The substrate has a display area and a peripheral area. The pixel array is arranged on the display area of the substrate. The signal lines are electrically connected to the pixels, and each signal line extends from the display area to the peripheral area, and one of the signal lines has an open defect. The repairing structure is arranged in the peripheral area, and the repairing structure includes a first repairing line, a second repairing line, an electrostatic discharge wire and an electrostatic protection element. The first repairing line intersects with one end of the signal line, and the first repairing line is electrically floating. The electrostatic protection element is electrically connected between the second repairing wire and the electrostatic discharge wire, wherein the electrostatic protection element includes a plurality of diodes connected in series, and each diode includes a first electrode, a second electrode, and an electrical connection between the second electrode and the second electrode. A control electrode and a semiconductor layer that are electrically connected, the semiconductor layer is located above the control electrode, and is connected between the first electrode and the second electrode, and one of the first electrodes that is not electrically connected to the second electrode is electrically connected to the static discharge wire One of the second electrodes that is not electrically connected to the first electrode is electrically connected to the second repair line, and the first repair line overlaps with one of the second electrodes. Where the first repair line intersects with one end of the signal line having an open defect, where the second electrode overlaps the first repair line, and where part of the control electrode overlaps part of the second electrode, there is at least one welding point, so that the second The repairing line is electrically connected to the signal line having an open defect through part of the control electrode, part of the second electrode and the first repairing line. the

基于上述,本发明的主动元件阵列基板具有修补结构,修补结构能保护信号线与修补线不易受到静电放电效应的影响,以避免信号线与修补线发生短路。如此一来,主动元件阵列基板能具有较佳的合格率与显示质量。  Based on the above, the active device array substrate of the present invention has a repair structure, and the repair structure can protect the signal line and the repair line from being affected by the electrostatic discharge effect, so as to avoid short circuit between the signal line and the repair line. In this way, the active device array substrate can have better yield and display quality. the

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。  In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings. the

附图说明 Description of drawings

图1A为本发明的一实施例的一种主动元件阵列基板的上视示意图;  FIG. 1A is a schematic top view of an active element array substrate according to an embodiment of the present invention;

图1B为图1A的修补结构的放大示意图;  Figure 1B is an enlarged schematic view of the repair structure of Figure 1A;

图2A为本发明的一实施例的一种主动元件阵列基板的上视示意图;  2A is a schematic top view of an active element array substrate according to an embodiment of the present invention;

图2B为图2A的修补结构的放大示意图;  Figure 2B is an enlarged schematic view of the repair structure of Figure 2A;

图3为本发明的一实施例的一种修补方法,适于修补图1A的主动元件阵列基板;  FIG. 3 is a repair method according to an embodiment of the present invention, which is suitable for repairing the active element array substrate of FIG. 1A;

图4为图1A的主动元件阵列基板的另一种修补结构的放大示意图;  4 is an enlarged schematic view of another repair structure of the active element array substrate of FIG. 1A;

图5为图2A的主动元件阵列基板的另一种修补结构的放大示意图;  5 is an enlarged schematic view of another repair structure of the active element array substrate of FIG. 2A;

图6为本发明的一实施例的一种修补方法,适于修补具有图5的修补结构的主动元件阵列基板。  FIG. 6 is a repair method according to an embodiment of the present invention, which is suitable for repairing the active device array substrate with the repair structure shown in FIG. 5 . the

【主要元件符号说明】  【Description of main component symbols】

100、100a:主动元件阵列基板  100, 100a: active element array substrate

102:基板  102: Substrate

104:显示区  104: display area

106:外围区  106: Peripheral Area

110:像素  110: Pixels

112:主动元件  112: Active components

114:像素电极  114: pixel electrode

116:栅极驱动电路  116: Gate drive circuit

118:源极驱动电路  118: Source drive circuit

120:扫描线  120: scan line

130、130a:数据线  130, 130a: data line

131a、131b:端  131a, 131b: terminal

134:软性电路板  134: Flexible printed circuit board

136:控制元件  136: Control element

138:静电防护元件  138: Electrostatic protection components

140:修补结构  140: Repairing Structures

142:第一修补线  142: First Repair Line

144:第二修补线  144: Second repair line

146:静电释放导线  146: Electrostatic discharge wire

150:静电保护元件  150: Electrostatic protection components

152、152a、152b:二极管  152, 152a, 152b: Diodes

154:第一电极  154: first electrode

156:第二电极  156: Second electrode

158:控制电极  158: Control electrode

160:半导体层  160: semiconductor layer

162:导电层  162: Conductive layer

180:焊接点  180: welding point

D:开路瑕疵  D: open circuit defect

具体实施方式 Detailed ways

图1A为本发明的一实施例的一种主动元件阵列基板的上视示意图,以及图1B为图1A的修补结构的放大示意图。请参照图1A,主动元件阵列基板100包括一基板102、多个像素110、多条扫描线120、多条数据线130以及一修补结构140。基板102具有一显示区104以及一外围区106。在本实施例中,显示区104是图1A中的虚线所围出来的内部区域而虚线至基板102边缘的区域则是外围区106。像素110阵列排列于基板102的显示区104上。外围区106内配置有栅极驱动电路116以及源极驱动电路118。像素110包括诸如晶体管的主动元件112以及与主动元件112电性连接的像素电极114。扫描线120及数据线130交错配置于基板102上,且分别从显示区104延伸至外围区106。栅极驱动电路116与源极驱动电路118分别经由扫描线120及数据线130连接到所对应的像素110内的主动元件112,以驱动像素110。  FIG. 1A is a schematic top view of an active device array substrate according to an embodiment of the present invention, and FIG. 1B is an enlarged schematic view of the repair structure in FIG. 1A . Referring to FIG. 1A , the active device array substrate 100 includes a substrate 102 , a plurality of pixels 110 , a plurality of scan lines 120 , a plurality of data lines 130 and a repair structure 140 . The substrate 102 has a display area 104 and a peripheral area 106 . In this embodiment, the display area 104 is the inner area surrounded by the dotted line in FIG. 1A and the area from the dotted line to the edge of the substrate 102 is the peripheral area 106 . The pixels 110 are arranged in an array on the display area 104 of the substrate 102 . A gate driving circuit 116 and a source driving circuit 118 are disposed in the peripheral area 106 . The pixel 110 includes an active element 112 such as a transistor and a pixel electrode 114 electrically connected to the active element 112 . The scan lines 120 and the data lines 130 are arranged alternately on the substrate 102 and extend from the display area 104 to the peripheral area 106 respectively. The gate driving circuit 116 and the source driving circuit 118 are respectively connected to the active device 112 in the corresponding pixel 110 via the scan line 120 and the data line 130 to drive the pixel 110 . the

请同时参照图1A与图1B,修补结构140配置于外围区106,修补结构140包括一第一修补线142、一第二修补线144、一静电释放导线146以及一静电保护元件150。第一修补线142与数据线130的其中一端131a交错而重叠。第一修补线142为电性浮置,且第一修补线142与数据线130彼此电性绝缘。静电保护元件150连接于第二修补线144与静电释放导线146(请查看图1B)之间,以及静电保护元件150与第一修补线142重叠且彼此电性绝缘。在本实施例中,静电保护元件150例如是包括至少一二极管152,二极管152包括一第一电极154、一第二电极156、一控制电极158以及一半导体层160。其中,控制电极158与第二电极156例如是藉由导电层162电性连接。其中,导电层162的材料可为透明材料(例如:铟锡氧化物、铝锡氧化物、铟锌氧化物、铝锌氧化物、氧化鋡、或其它合适的材料、或上述的组合)、反射材料(例如:金、银、铜、锡、铝、钼、钛、钽、或其它合适的材料、或上述材料的合金、或上述材料的氮化物、或上述材料的氧化物、或上述材料的氮氧化物、或上述的组合)、或上述的组合。本发明实施例的导电层162材料,以透明材料 为范例,因此,又可称为透明导电层162,但不限于此。半导体层160位于部分控制电极158上方,并连接于第一电极154与第二电极156之间。第一电极154例如是藉由透明导电层162与静电释放导线146电性连接,且静电释放导线146例如是电性连接于一共同电压端或者是接地。第二电极156例如是与第二修补线144电性连接。第二修补线144例如是经由源极驱动电路118与软性电路板134连接至一控制元件136,控制元件136例如是一电路控制板;或者是第二修补线144例如是经由源极驱动电路118与软性电路板134连接。  Please refer to FIG. 1A and FIG. 1B at the same time. The repair structure 140 is disposed in the peripheral area 106 . The repair structure 140 includes a first repair line 142 , a second repair line 144 , an ESD wire 146 and an ESD protection element 150 . The first repairing line 142 overlaps with one end 131 a of the data line 130 alternately. The first repairing line 142 is electrically floating, and the first repairing line 142 and the data line 130 are electrically insulated from each other. The ESD protection element 150 is connected between the second repairing wire 144 and the ESD discharge wire 146 (please refer to FIG. 1B ), and the ESD protection element 150 overlaps with the first repairing wire 142 and is electrically insulated from each other. In this embodiment, the ESD protection element 150 includes at least one diode 152 , and the diode 152 includes a first electrode 154 , a second electrode 156 , a control electrode 158 and a semiconductor layer 160 . Wherein, the control electrode 158 is electrically connected to the second electrode 156 through the conductive layer 162 , for example. Wherein, the material of the conductive layer 162 can be a transparent material (for example: indium tin oxide, aluminum tin oxide, indium zinc oxide, aluminum zinc oxide, ardium oxide, or other suitable materials, or a combination of the above), reflective materials (for example: gold, silver, copper, tin, aluminum, molybdenum, titanium, tantalum, or other suitable materials, or alloys of the above materials, or nitrides of the above materials, or oxides of the above materials, or nitrogen oxides, or a combination of the above), or a combination of the above. The material of the conductive layer 162 in the embodiment of the present invention is exemplified by a transparent material, therefore, it can also be called the transparent conductive layer 162, but is not limited thereto. The semiconductor layer 160 is located above a portion of the control electrode 158 and connected between the first electrode 154 and the second electrode 156 . The first electrode 154 is, for example, electrically connected to the ESD wire 146 through the transparent conductive layer 162 , and the ESD wire 146 is, for example, electrically connected to a common voltage terminal or grounded. The second electrode 156 is, for example, electrically connected to the second repairing line 144 . The second repair line 144 is, for example, connected to a control element 136 via the source drive circuit 118 and the flexible circuit board 134, and the control element 136 is, for example, a circuit control board; or the second repair line 144 is, for example, via the source drive circuit 118 is connected to the flexible circuit board 134 . the

在本实施例中,主动元件阵列基板100例如是更包括一静电防护元件138,连接各数据线130,且邻近于第一修补线142与各数据线130交错处。静电防护元件138例如是一二极管。再者,值得一提的是,第一修补线142与数据线130的其中一端131a交错而重叠,第二修补线144与数据线130的另一端131b交错而重叠,以及静电保护元件150的第二电极156与第一修补线142重叠且彼此电性绝缘。  In this embodiment, the active device array substrate 100 further includes, for example, an ESD protection component 138 connected to each data line 130 and adjacent to the intersection of the first repair line 142 and each data line 130 . The ESD protection element 138 is, for example, a diode. Furthermore, it is worth mentioning that the first repair line 142 overlaps with one end 131a of the data line 130, the second repair line 144 overlaps with the other end 131b of the data line 130, and the first repair line 144 of the ESD protection element 150 The two electrodes 156 overlap with the first repairing line 142 and are electrically insulated from each other. the

一般来说,在制作主动元件阵列基板的工艺中或者是使用主动元件阵列基板时,都很有可能引发静电放电效应,而影响主动元件阵列基板的元件特性或显示质量。特别是,静电放电效应可能会导致信号线与修补线发生短路。因此,在本实施例中,主动元件阵列基板100设置有静电保护元件150,以保护信号线(诸如数据线130)与修补线142不易受静电放电效应的影响。详言之,当主动元件阵列基板100的外围区106中发生不当的静电荷累积或是发生静电放电的情形时,由于第二修补线144与静电释放导线146之间配置有静电保护元件150,因此静电能沿着第二修补线144、静电保护元件150的第二电极156、第一电极154以及静电释放导线146的路径而导出。如此一来,能避免信号线(诸如数据线130)与修补线142受到静电影响而发生短路,使得主动元件阵列基板100能具有较佳的合格率与显示质量。  Generally speaking, in the process of manufacturing the active device array substrate or when the active device array substrate is used, electrostatic discharge effects are likely to be induced, thereby affecting the device characteristics or display quality of the active device array substrate. In particular, the electrostatic discharge effect may cause a short circuit between the signal line and the repair line. Therefore, in this embodiment, the active device array substrate 100 is provided with an ESD protection element 150 to protect the signal lines (such as the data lines 130 ) and the repair lines 142 from being affected by the ESD effect. In detail, when improper electrostatic charge accumulation or electrostatic discharge occurs in the peripheral area 106 of the active device array substrate 100, since the electrostatic protection element 150 is arranged between the second repair line 144 and the electrostatic discharge line 146, Therefore, static electricity can be derived along the path of the second repairing wire 144 , the second electrode 156 of the ESD protection component 150 , the first electrode 154 and the ESD discharge wire 146 . In this way, the signal line (such as the data line 130 ) and the repair line 142 can be prevented from being short-circuited due to static electricity, so that the active device array substrate 100 can have better yield and display quality. the

图2A为本发明的一实施例的一种主动元件阵列基板的上视示意图,以及图2B为图2A的修补结构的放大示意图。图3为本发明的一实施例的一种修补方法,适于修补图1A的主动元件阵列基板。特别注意的是,图2A所示的主动元件阵列基板100a的构件与图1A所示的主动元件阵列基板100的构件实质上相同,但是在图2A所示的主动元件阵列基板100a中,其中一条信号线(诸如数据线130a)具有开路瑕疵D,因此需藉由修补结构140及图3所示 的修补方法来进行修补。  FIG. 2A is a schematic top view of an active device array substrate according to an embodiment of the present invention, and FIG. 2B is an enlarged schematic view of the repair structure in FIG. 2A . FIG. 3 is a repair method according to an embodiment of the present invention, which is suitable for repairing the active device array substrate shown in FIG. 1A . It should be noted that the components of the active device array substrate 100a shown in FIG. 2A are substantially the same as the components of the active device array substrate 100 shown in FIG. 1A, but in the active device array substrate 100a shown in FIG. 2A, one of The signal line (such as the data line 130a) has an open defect D, so it needs to be repaired by the repair structure 140 and the repair method shown in FIG. 3 . the

请同时参照图2A、图2B以及图3,首先,进行步骤S310,将第一修补线142与具有开路瑕疵D的信号线(诸如数据线130a)的其中一端131a焊接。在本实施例中,主动元件阵列基板100a的其中一条数据线130a例如是具有开路瑕疵D,第一修补线142与具有开路瑕疵D的数据线130a的一端131a重叠,以及第二修补线144与具有开路瑕疵D的数据线130a的另一端131b重叠。因此,在本实施例中,例如是以激光熔接的方式焊接第一修补线142与数据线130a的一端131a重叠处,以形成一焊接点180。如此一来,具有开路瑕疵D的数据线130a藉由焊接点180与第一修补线142电性连接。再者,在本实施例中,修补方法更包括焊接第二修补线144与数据线130a的另一端131b重叠处,以形成一焊接点180。  Please refer to FIG. 2A , FIG. 2B and FIG. 3 at the same time. First, step S310 is performed to solder the first repair line 142 to one end 131a of the signal line (such as the data line 130a ) having the open defect D. In this embodiment, one of the data lines 130a of the active device array substrate 100a has an open defect D, for example, the first repair line 142 overlaps with one end 131a of the data line 130a having the open defect D, and the second repair line 144 overlaps with the end 131a of the data line 130a having the open defect D. The other end 131b of the data line 130a having the open defect D overlaps. Therefore, in this embodiment, for example, laser welding is used to weld the overlapping portion of the first repair line 142 and the end 131a of the data line 130a to form a welding point 180 . In this way, the data line 130 a with the open defect D is electrically connected to the first repair line 142 through the welding point 180 . Moreover, in this embodiment, the repairing method further includes welding the overlapped portion of the second repairing line 144 and the other end 131b of the data line 130a to form a welding point 180 . the

接着,进行步骤S320,于静电保护元件150与第一修补线142重叠处,将静电保护元件150与第一修补线142焊接,其中第二修补线144通过静电保护元件150以及第一修补线142与具有开路瑕疵D的信号线(诸如数据线130a)电性连接。详言之,在本实施例中,静电保护元件150例如是包括至少一二极管152,二极管152包括一第一电极154、一第二电极156、一控制电极158以及一半导体层160,半导体层160设置于控制电极158上方并连接于第一电极154与第二电极156之间。静电保护元件150与第一修补线142重叠处例如是第二电极156与第一修补线142重叠处,因此,焊接静电保护元件150与第一修补线142重叠处例如是焊接第二电极156与第一修补线142重叠处,以于第二电极156与第一修补线142重叠处形成一焊接点180。  Next, proceed to step S320, where the ESD protection element 150 overlaps with the first repair line 142, weld the ESD protection element 150 to the first repair line 142, wherein the second repair line 144 passes through the ESD protection element 150 and the first repair line 142 It is electrically connected to a signal line having an open defect D (such as the data line 130 a ). Specifically, in this embodiment, the electrostatic protection element 150 includes at least one diode 152, for example, and the diode 152 includes a first electrode 154, a second electrode 156, a control electrode 158 and a semiconductor layer 160, the semiconductor layer 160 It is disposed above the control electrode 158 and connected between the first electrode 154 and the second electrode 156 . The place where the electrostatic protection component 150 overlaps with the first repair line 142 is, for example, the place where the second electrode 156 overlaps with the first repair line 142. Therefore, the place where the electrostatic protection component 150 overlaps with the first repair line 142 is, for example, welding the second electrode 156 and the first repair line 142. Where the first repair line 142 overlaps, a welding point 180 is formed where the second electrode 156 overlaps with the first repair line 142 . the

请参照图2A与图2B,在本实施例中,第二电极156例如是与第二修补线144电性连接。因此,在焊接第一修补线142与数据线130a重叠处、第二修补线144与数据线130a重叠处以及第二电极156与第一修补线142重叠处之后,信号能经由第二修补线144、静电保护元件150的第二电极156、焊接点180(位于第一修补线142与第二电极156重叠处)、第一修补线142、焊接点180(位于数据线130a与第一修补线142重叠处)而传送至数据线130a的一端131a,且由于第二修补线144与数据线130a的另一端131b已藉由焊接点180焊接,因此信号能经由上述路径而由具有开路瑕疵D的数据线130a的一端131a传送至另一端131b。如此一来,具有开路瑕疵D的数据线130a能藉 由修补结构140而维持电导通的状态,使像素110能正常运作。  Please refer to FIG. 2A and FIG. 2B , in this embodiment, the second electrode 156 is, for example, electrically connected to the second repairing line 144 . Therefore, after soldering the overlapping portion of the first repairing line 142 and the data line 130a, the overlapping portion of the second repairing line 144 and the data line 130a, and the overlapping portion of the second electrode 156 and the first repairing line 142, the signal can pass through the second repairing line 144. , the second electrode 156 of the electrostatic protection element 150, the welding point 180 (located at the overlap of the first repair line 142 and the second electrode 156), the first repair line 142, the welding point 180 (located at the data line 130a and the first repair line 142 overlap) and transmitted to one end 131a of the data line 130a, and since the second repair line 144 and the other end 131b of the data line 130a have been welded by the welding point 180, the signal can be transmitted by the data with the open defect D through the above-mentioned path One end 131a of the wire 130a is passed to the other end 131b. In this way, the data line 130a with the open-circuit defect D can maintain the state of electrical conduction through the repair structure 140, so that the pixel 110 can operate normally. the

此外,于其它实施例中,第二电极156亦可连接至如下列实施例的图4所述的静电释放导线146。本发明的实施例,是以第二电极156不连接至如下列实施例的图4所述的静电释放导线146为范例,但不限于此。  In addition, in other embodiments, the second electrode 156 may also be connected to the ESD wire 146 as described in FIG. 4 of the following embodiments. In the embodiment of the present invention, the second electrode 156 is not connected to the ESD wire 146 as described in FIG. 4 of the following embodiment as an example, but it is not limited thereto. the

由上述的实施例可知,主动元件阵列基板100、100a的修补结构140能保护数据线130与修补线142不易受到静电放电效应影响,且可修补具有开路瑕疵D的数据线130a。换句话说,如图1A与图1B所示,在信号线(诸如数据线130)为正常的状况下,由于修补结构140能有效地将静电导出,因此能避免信号线(诸如数据线130)与修补线142因受到静电放电效应而有短路的情况发生。如此一来,能提升主动元件阵列基板100的合格率,进而使显示面板具有良好的显示质量。此外,如图2A与图2B所示,当信号线(诸如数据线130a)具有开路瑕疵D时,修补结构140能用以修补信号线(诸如数据线130a),使具有开路瑕疵的信号线维持电导通的状态,以使像素110正常运作。换言之,修补结构140的设计使主动元件阵列基板100、100a具有良好的元件特性与较佳的显示质量。  It can be known from the above embodiments that the repair structure 140 of the active device array substrates 100 and 100a can protect the data lines 130 and the repair lines 142 from being affected by the ESD effect, and can repair the data lines 130a with the open defect D. In other words, as shown in FIG. 1A and FIG. 1B, when the signal line (such as the data line 130) is normal, since the repair structure 140 can effectively conduct static electricity, it can avoid the signal line (such as the data line 130) There is a short circuit with the repair line 142 due to the electrostatic discharge effect. In this way, the yield rate of the active device array substrate 100 can be improved, thereby enabling the display panel to have good display quality. In addition, as shown in FIG. 2A and FIG. 2B, when the signal line (such as the data line 130a) has an open defect D, the repair structure 140 can be used to repair the signal line (such as the data line 130a), so that the signal line with the open defect remains. The electrical conduction state enables the pixel 110 to operate normally. In other words, the design of the repair structure 140 enables the active device array substrates 100 and 100 a to have good device characteristics and better display quality. the

特别说明的是,虽然在上述的实施例中是以在数据线130a的其中一端131a配置修补结构140为例,但修补结构140也可以配置在数据线130a的另一端131b或者是同时配置于数据线130a的两端131a、131b。此外,虽然在上述的实施例中是以将修补结构140用来修补数据线130为例,但是所属领域中具有通常知识者应理解本发明的主动元件阵列基板的修补结构也可以配置成与扫描线交错而用以修补具有开路瑕疵的扫描线,于此不赘述。再者,在上述的实施例中,是以静电保护元件150包括一个二极管152为例,但静电保护元件150也可以包括多个二极管或者是包括具有其它构型的二极管。  In particular, although in the above-mentioned embodiment, the repair structure 140 is configured at one end 131a of the data line 130a as an example, the repair structure 140 can also be configured at the other end 131b of the data line 130a or at the same time. The two ends 131a, 131b of the line 130a. In addition, although the above-mentioned embodiment uses the repair structure 140 as an example to repair the data line 130, those skilled in the art should understand that the repair structure of the active device array substrate of the present invention can also be configured to be compatible with scanning The lines are interleaved to repair the scan lines with open defects, which will not be repeated here. Furthermore, in the above-mentioned embodiment, the ESD protection component 150 includes a diode 152 as an example, but the ESD protection component 150 may also include multiple diodes or diodes with other configurations. the

图4为图1A的主动元件阵列基板的另一种修补结构140的放大示意图。请参照图4,在本实施例中,修补结构140包括一第一修补线142、一第二修补线144、一静电释放导线146以及一静电保护元件150。第一修补线142与数据线130的其中一端131a交错而具有一重叠处。第一修补线142为电性浮置,且第一修补线142与数据线130彼此电性绝缘。静电保护元件150连接于第二修补线144与静电释放导线146之间,以及静电保护元件150与第一修补线142重叠且彼此电性绝缘。  FIG. 4 is an enlarged schematic view of another repair structure 140 of the active device array substrate in FIG. 1A . Referring to FIG. 4 , in this embodiment, the repair structure 140 includes a first repair line 142 , a second repair line 144 , an ESD wire 146 and an ESD protection element 150 . The first repairing line 142 intersects with one end 131 a of the data line 130 to have an overlap. The first repairing line 142 is electrically floating, and the first repairing line 142 and the data line 130 are electrically insulated from each other. The ESD protection element 150 is connected between the second repairing wire 144 and the ESD discharge wire 146 , and the ESD protection element 150 overlaps with the first repairing wire 142 and is electrically insulated from each other. the

请参照图4,在本实施例中,静电保护元件150例如是包括多个彼此串接的二极管152a、152b,各二极管152a、152b包括一第一电极154、一第二电极156、一控制电极158以及一半导体层160。其中,控制电极158例如是藉由导电层162与第二电极156电性连接。其中,导电层162的材料可为透明材料(例如:铟锡氧化物、铝锡氧化物、铟锌氧化物、铝锌氧化物、氧化鋡、或其它合适的材料、或上述的组合)、反射材料(例如:金、银、铜、锡、铝、钼、钛、钽、或其它合适的材料、或上述材料的合金、或上述材料的氮化物、或上述材料的氧化物、或上述材料的氮氧化物、或上述的组合)、或上述的组合。本发明实施例的导电层162材料,以透明材料为范例,因此,又可称为透明导电层162,但不限于此。半导体层160位于部分控制电极158上方,并连接于第一电极154与第二电极156之间。二极管152a的第一电极154与二极管152b的第二电极156连接,以串接二极管152a与二极管152b。再者,未与第二电极156电性连接的其中一个第一电极154(即二极管152b的第一电极154)例如是藉由透明导电层162与静电释放导线146电性连接,静电释放导线146例如是电性连接于一共同电压端或者是接地。未与第一电极154电性连接的其中一个第二电极156(即二极管152a的第二电极156)例如是与第二修补线144电性连接,第二修补线144例如是连接至一控制元件136,控制元件136例如是一电路控制板或者是软性电路板。  Please refer to FIG. 4 , in this embodiment, the electrostatic protection element 150 includes, for example, a plurality of diodes 152a, 152b connected in series, and each diode 152a, 152b includes a first electrode 154, a second electrode 156, and a control electrode. 158 and a semiconductor layer 160 . Wherein, the control electrode 158 is electrically connected to the second electrode 156 through the conductive layer 162 , for example. Wherein, the material of the conductive layer 162 can be a transparent material (for example: indium tin oxide, aluminum tin oxide, indium zinc oxide, aluminum zinc oxide, ardium oxide, or other suitable materials, or a combination of the above), reflective materials (for example: gold, silver, copper, tin, aluminum, molybdenum, titanium, tantalum, or other suitable materials, or alloys of the above materials, or nitrides of the above materials, or oxides of the above materials, or nitrogen oxides, or a combination of the above), or a combination of the above. The material of the conductive layer 162 in the embodiment of the present invention is exemplified by a transparent material, so it can also be called the transparent conductive layer 162 , but is not limited thereto. The semiconductor layer 160 is located above a portion of the control electrode 158 and connected between the first electrode 154 and the second electrode 156 . The first electrode 154 of the diode 152a is connected to the second electrode 156 of the diode 152b to connect the diode 152a and the diode 152b in series. Furthermore, one of the first electrodes 154 (that is, the first electrode 154 of the diode 152 b ) that is not electrically connected to the second electrode 156 is electrically connected to the electrostatic discharge wire 146 through the transparent conductive layer 162 , and the electrostatic discharge wire 146 For example, it is electrically connected to a common voltage terminal or grounded. One of the second electrodes 156 not electrically connected to the first electrode 154 (that is, the second electrode 156 of the diode 152a) is, for example, electrically connected to the second repair line 144, and the second repair line 144 is, for example, connected to a control element. 136. The control component 136 is, for example, a circuit control board or a flexible circuit board. the

在本实施例中,第一修补线142与数据线130其中一端131a交错而重叠,第二修补线144与数据线130的另一端131b交错而重叠,第二电极156(即二极管152b的第二电极156)与第一修补线142重叠,以及控制电极158(即二极管152a的控制电极158)与第二电极156(即二极管152b的第二电极156)重叠。  In this embodiment, the first repair line 142 overlaps with one end 131a of the data line 130, the second repair line 144 overlaps with the other end 131b of the data line 130, and the second electrode 156 (that is, the second electrode of the diode 152b Electrode 156 ) overlaps first repair line 142 , and control electrode 158 (ie, control electrode 158 of diode 152 a ) overlaps second electrode 156 (ie, second electrode 156 of diode 152 b ). the

请同时参照图1A与图4,当主动元件阵列基板100的外围区106中发生不当的静电荷累积或是发生静电放电的情形时,由于第二修补线144与静电释放导线146之间配置有静电保护元件150,因此静电能沿着第二修补线144、静电保护元件150的二极管152a的第二电极156、二极管152a的第一电极154、二极管152b的第二电极156、二极管152b的第一电极154以及静电释放导线146的路径而导出。如此一来,能避免信号线(诸如数据线130)与修补线142受到静电影响而发生短路,使得主动元件阵列基板100能具有较佳的合格率与显示质量。  Please refer to FIG. 1A and FIG. 4 at the same time. When improper electrostatic charge accumulation or electrostatic discharge occurs in the peripheral area 106 of the active device array substrate 100, since the second repair line 144 and the electrostatic discharge wire 146 are disposed between ESD protection element 150, so static electricity can pass along the second repair line 144, the second electrode 156 of the diode 152a of the ESD protection element 150, the first electrode 154 of the diode 152a, the second electrode 156 of the diode 152b, and the first electrode 156 of the diode 152b. The electrode 154 and the path of the electrostatic discharge wire 146 are derived. In this way, the signal line (such as the data line 130 ) and the repair line 142 can be prevented from being short-circuited due to static electricity, so that the active device array substrate 100 can have better yield and display quality. the

图5为图2A的主动元件阵列基板的另一种修补结构140的放大示意图。图6为本发明的一实施例的一种修补方法,适于修补具有图5的修补结构140的主动元件阵列基板100a。请同时参照图2A与图5,在本实施例中,主动元件阵列基板100a的其中一条信号线(诸如数据线130a)具有开路瑕疵D,因此需藉由图5的修补结构140及图6所示的修补方法来进行修补。  FIG. 5 is an enlarged schematic view of another repair structure 140 of the active device array substrate in FIG. 2A . FIG. 6 is a repair method according to an embodiment of the present invention, which is suitable for repairing the active device array substrate 100 a having the repair structure 140 shown in FIG. 5 . Please refer to FIG. 2A and FIG. 5 at the same time. In this embodiment, one of the signal lines (such as the data line 130a) of the active device array substrate 100a has an open circuit defect D, so it needs to be repaired by the repair structure 140 in FIG. The repair method shown to repair. the

请同时参照图2A、图5以及图6,首先,进行步骤S610,将第一修补线142与具有开路瑕疵D的信号线(诸如数据线130a)的其中一端131a焊接。在本实施例中,主动元件阵列基板100a的其中一条数据线130a例如是具有开路瑕疵D,第一修补线142与具有开路瑕疵D的数据线130a的一端131a重叠,以及第二修补线144与具有开路瑕疵D的数据线130a的另一端131b重叠。因此,在本实施例中,例如是以激光熔接的方式焊接第一修补线142与数据线130a的一端131a重叠处,以形成一焊接点180。如此一来,具有开路瑕疵D的数据线130a藉由焊接点180与第一修补线142电性连接。再者,在本实施例中,修补方法更包括焊接第二修补线144与数据线130a的另一端131b重叠处,以形成一焊接点180。  Please refer to FIG. 2A , FIG. 5 and FIG. 6 at the same time. Firstly, step S610 is performed to solder the first repair line 142 to one end 131a of the signal line (such as the data line 130a ) having the open defect D. In this embodiment, one of the data lines 130a of the active device array substrate 100a has an open defect D, for example, the first repair line 142 overlaps with one end 131a of the data line 130a having the open defect D, and the second repair line 144 overlaps with the end 131a of the data line 130a having the open defect D. The other end 131b of the data line 130a having the open defect D overlaps. Therefore, in this embodiment, for example, laser welding is used to weld the overlapping portion of the first repair line 142 and the end 131a of the data line 130a to form a welding point 180 . In this way, the data line 130 a with the open defect D is electrically connected to the first repair line 142 through the welding point 180 . Moreover, in this embodiment, the repairing method further includes welding the overlapped portion of the second repairing line 144 and the other end 131b of the data line 130a to form a welding point 180 . the

接着,进行步骤S620,于第二电极156与第一修补线142重叠处,将第二电极156与第一修补线142焊接。在本实施例中,二极管152b的第二电极156例如是与第一修补线142重叠。因此,此步骤例如是以激光熔接的方式焊接二极管152b的第二电极156与第一修补线142,以形成一焊接点180。  Next, step S620 is performed, where the second electrode 156 and the first repairing line 142 overlap, the second electrode 156 is welded to the first repairing line 142 . In this embodiment, the second electrode 156 of the diode 152 b overlaps with the first repairing line 142 , for example. Therefore, in this step, for example, laser welding is used to weld the second electrode 156 of the diode 152b and the first repair line 142 to form a welding point 180 . the

然后,进行步骤S630,将部分控制电极158与部分第二电极156焊接,以使第二修补线144通过部分控制电极158、部分第二电极156以及第一修补线142与具有开路瑕疵D的信号线(诸如数据线130a)电性连接。在本实施例中,静电保护元件150例如是包括多个彼此串接的二极管152a、152b,各二极管152a、152b包括一第一电极154、一第二电极156、一控制电极158以及一半导体层160。其中,二极管152a的控制电极158与二极管152a的第二电极156重叠。因此,在此步骤中,焊接部分控制电极158与部分第二电极156例如是焊接二极管152a的控制电极158与二极管152a的第二电极156,以形成一焊接点180。其中,由于二极管152a的控制电极158例如是与二极管152b的第二电极156电性连接,因此二极管152a的第二电极156可以通过焊接点180与二极管152a的控制电极158电性连接,进而与二极管152b的第二电极156 电性连接。  Then, proceed to step S630, welding part of the control electrode 158 and part of the second electrode 156, so that the second repair line 144 passes through the part of the control electrode 158, part of the second electrode 156 and the first repair line 142 and the signal with the open defect D Wires (such as the data wire 130a) are electrically connected. In this embodiment, the electrostatic protection element 150 includes, for example, a plurality of diodes 152a, 152b connected in series, and each diode 152a, 152b includes a first electrode 154, a second electrode 156, a control electrode 158 and a semiconductor layer 160. Wherein, the control electrode 158 of the diode 152a overlaps with the second electrode 156 of the diode 152a. Therefore, in this step, welding a portion of the control electrode 158 and a portion of the second electrode 156 is, for example, welding the control electrode 158 of the diode 152 a and the second electrode 156 of the diode 152 a to form a welding point 180 . Wherein, since the control electrode 158 of the diode 152a is, for example, electrically connected to the second electrode 156 of the diode 152b, the second electrode 156 of the diode 152a can be electrically connected to the control electrode 158 of the diode 152a through the welding point 180, and then connected to the diode 152a. The second electrode 156 of 152b is electrically connected. the

请参照图2A与图5,在本实施例中,二极管152a的第二电极156例如是与第二修补线144电性连接。因此,在焊接第一修补线142与数据线130a重叠处、二极管152b的第二电极156与第一修补线142重叠处以及二极管152a的控制电极158与二极管152a的第二电极156之后,信号能通过第二修补线144、静电保护元件150的二极管152a的第二电极156、焊接点180(位于二极管152a的控制电极158与二极管152a的第二电极156重叠处)、静电保护元件150的二极管152a的控制电极158、静电保护元件150的二极管152b的第二电极156、焊接点180(位于第一修补线142与二极管152b的第二电极156重叠处)、第一修补线142、信号焊接点180(位于数据线130a与第一修补线142重叠处)而传送至数据线130a的一端131a,且由于第二修补线144与数据线130a的另一端131b已藉由焊接点180焊接,因此信号能经由上述路径而由具有开路瑕疵D的数据线130a的一端131a传送至另一端131b。如此一来,具有开路瑕疵D的数据线130a能藉由修补结构140而维持电导通的状态,使像素110能正常运作。  Please refer to FIG. 2A and FIG. 5 , in this embodiment, the second electrode 156 of the diode 152 a is electrically connected to the second repair line 144 , for example. Therefore, after welding the first repair line 142 overlapping with the data line 130a, the second electrode 156 of the diode 152b overlapping with the first repair line 142, and the control electrode 158 of the diode 152a and the second electrode 156 of the diode 152a, the signal can Through the second repair line 144, the second electrode 156 of the diode 152a of the electrostatic protection element 150, the welding point 180 (at the overlapping place where the control electrode 158 of the diode 152a overlaps with the second electrode 156 of the diode 152a), the diode 152a of the electrostatic protection element 150 The control electrode 158 of the ESD protection element 150, the second electrode 156 of the diode 152b, the welding point 180 (located at the overlap of the first repair line 142 and the second electrode 156 of the diode 152b), the first repair line 142, the signal welding point 180 (located at the overlap of the data line 130a and the first repair line 142) and transmitted to one end 131a of the data line 130a, and because the second repair line 144 and the other end 131b of the data line 130a have been welded by the welding point 180, the signal can be It is transmitted from one end 131a of the data line 130a having the open defect D to the other end 131b through the above path. In this way, the data line 130 a with the open defect D can be maintained in an electrically conductive state by the repair structure 140 , so that the pixel 110 can operate normally. the

此外,于其它实施例中,二极管152b的第二电极156亦可如上述实施例的图2所述设计而不连接至静电释放导线146。本发明的实施例,是以二极管152b的第二电极156连接至静电释放导线146为范例,但不限于此。  In addition, in other embodiments, the second electrode 156 of the diode 152b can also be designed as described in FIG. 2 of the above embodiment without being connected to the ESD wire 146 . In the embodiment of the present invention, the second electrode 156 of the diode 152b is connected to the ESD wire 146 as an example, but it is not limited thereto. the

由上述的实施例可知,主动元件阵列基板100、100a的修补结构140能保护数据线130与修补线142不易受到静电放电效应影响,且可修补具有开路瑕疵的数据线130a。换句话说,如图1A与图4所示,在信号线(诸如数据线130)为正常的状况下,由于修补结构140能有效地将静电导出,因此能避免信号线(诸如数据线130)与修补线142因受到静电放电效应而有短路的情况发生。如此一来,能提升主动元件阵列基板100的合格率,进而使显示面板具有良好的显示质量。此外,如图2A与图5所示,当信号线(诸如数据线130a)具有开路瑕疵D时,修补结构140能用以修补信号线(诸如数据线130a),使具有开路瑕疵的信号线维持电导通的状态,以使像素110正常运作。换言之,修补结构140的设计使主动元件阵列基板100、100a具有良好的元件特性与较佳的显示质量。  It can be seen from the above-mentioned embodiments that the repair structure 140 of the active device array substrates 100 and 100a can protect the data lines 130 and the repair lines 142 from being affected by the ESD effect, and can repair the data lines 130a with open defects. In other words, as shown in FIG. 1A and FIG. 4, when the signal line (such as the data line 130) is normal, since the repair structure 140 can effectively conduct static electricity, it can avoid the signal line (such as the data line 130) There is a short circuit with the repair line 142 due to the electrostatic discharge effect. In this way, the yield rate of the active device array substrate 100 can be improved, thereby enabling the display panel to have good display quality. In addition, as shown in FIG. 2A and FIG. 5, when the signal line (such as the data line 130a) has an open defect D, the repair structure 140 can be used to repair the signal line (such as the data line 130a), so that the signal line with the open defect remains. The electrical conduction state enables the pixel 110 to operate normally. In other words, the design of the repair structure 140 enables the active device array substrates 100 and 100 a to have good device characteristics and better display quality. the

特别说明的是,虽然在上述的实施例中是以在数据线130a的其中一端 131a配置修补结构140为例,但修补结构140也可以配置在数据线130a的另一端131b或者是两端131a、131b。此外,虽然在上述的实施例中仅以修补结构140是用来修补数据线130为例,但是所属领域中具有通常知识者应理解本发明的主动元件阵列基板的修补结构也可以配置成与扫描线交错而用以修补具有开路瑕疵的扫描线。再者,在上述的实施例中,是以静电保护元件150包括二个二极管152为例,但静电保护元件150也可以包括二个以上串接的二极管或者是包括具有其它构型的二极管。  It is particularly noted that although in the above-mentioned embodiment, the repair structure 140 is configured at one end 131a of the data line 130a as an example, the repair structure 140 may also be configured at the other end 131b of the data line 130a or both ends 131a, 131b. In addition, although in the above-mentioned embodiment only the repair structure 140 is used to repair the data line 130 as an example, those skilled in the art should understand that the repair structure of the active device array substrate of the present invention can also be configured to be compatible with scanning Line interleaving is used to repair scan lines with open defects. Furthermore, in the above-mentioned embodiment, the ESD protection element 150 includes two diodes 152 as an example, but the ESD protection element 150 may also include more than two diodes connected in series or diodes with other configurations. the

综上所述,本发明的主动元件阵列基板具有修补结构,修补结构能有效地将静电导出。因此,当主动元件阵列基板的外围区中发生不当的静电荷累积或是发生静电放电的情形时,修补结构可以保护信号线与修补线不易受到静电放电效应的影响,进而避免信号线与修补线发生短路。亦即,本发明的主动元件阵列基板不易受到静电放电的破坏而具有良好的质量。因此,当显示面板具有上述的主动元件阵列基板,显示面板亦具有良好的显示质量且不易因静电放电的破坏而受损。  To sum up, the active device array substrate of the present invention has a repair structure, and the repair structure can effectively discharge static electricity. Therefore, when improper electrostatic charge accumulation or electrostatic discharge occurs in the peripheral area of the active device array substrate, the repair structure can protect the signal line and the repair line from being easily affected by the electrostatic discharge effect, thereby preventing the signal line and the repair line from being affected by the electrostatic discharge effect. A short circuit has occurred. That is, the active device array substrate of the present invention is not easily damaged by electrostatic discharge and has good quality. Therefore, when the display panel has the above-mentioned active element array substrate, the display panel also has good display quality and is not easily damaged by electrostatic discharge. the

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。  Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make various corresponding modifications according to the present invention without departing from the spirit and essence of the present invention. Changes and deformations, but these corresponding changes and deformations should fall within the scope of protection of the appended claims of the present invention. the

Claims (18)

1. active component array base board comprises:
One substrate has a viewing area and an external zones;
A plurality of pixels, arrayed is on this viewing area of this substrate;
Many signal line electrically connect with those pixels, and respectively this holding wire extend to this external zones from this viewing area respectively; And
One preparing structure is disposed at this external zones, and this preparing structure comprises:
One first patch cord, staggered with a wherein end of those holding wires, and this first patch cord is for electrically floating;
One second patch cord;
One static discharges lead; And
One electrostatic protection element is connected in this second patch cord and this static and discharges between the lead, and this electrostatic protection element and this first patch cord are overlapping and be electrically insulated each other.
2. active component array base board as claimed in claim 1 is characterized in that, those holding wires comprise multi-strip scanning line and many data wires, and those scan lines and those data wires are staggered.
3. active component array base board as claimed in claim 1 is characterized in that, this static discharges lead and is electrically connected at a common voltage end.
4. active component array base board as claimed in claim 1 is characterized in that, this static discharges lead ground connection.
5. active component array base board as claimed in claim 1 is characterized in that this electrostatic protection element comprises at least one diode, and this diode comprises:
One first electrode;
One second electrode;
One control electrode electrically connects with this second electrode; And
Semi-conductor layer is positioned at this control electrode top, and is connected between this first electrode and this second electrode.
6. active component array base board as claimed in claim 5; It is characterized in that; This first electrode and this static discharge lead and electrically connect, this second electrode and the electric connection of this second patch cord, and wherein this second electrode and this first patch cord are overlapping and be electrically insulated each other.
7. active component array base board as claimed in claim 1; It is characterized in that; This electrostatic protection element comprises a plurality of diodes of serial connection each other; Respectively this diode comprises one first electrode, one second electrode, one and this second electrode control electrode and the semi-conductor layer that electrically connect, and this semiconductor layer is positioned at this control electrode top, and is connected between this first electrode and this second electrode.
8. active component array base board as claimed in claim 7; It is characterized in that; One of them first electrode and this static with this second electrode electric connection does not discharge the lead electric connection; And one of them second electrode and the electric connection of this second patch cord of not electrically connecting with this first electrode, and this first patch cord and one of them second electrode are overlapping.
9. active component array base board as claimed in claim 1 is characterized in that, this second patch cord is connected to a control element.
10. active component array base board as claimed in claim 1 is characterized in that, further comprises another electrostatic protection element, connects respectively this holding wire, and is adjacent to this first patch cord and this holding wire staggered place respectively.
11. a method for repairing and mending is suitable for repairing the described active component array base board of claim 1, when wherein open circuit flaw (open defect) took place a signal line, this method for repairing and mending comprised:
With of the wherein end welding of this first patch cord with holding wire with this open circuit flaw; And
At this electrostatic protection element and this first patch cord overlapping, with this electrostatic protection element and the welding of this first patch cord, wherein this second patch cord electrically connects with the holding wire with this open circuit flaw through this electrostatic protection element and this first patch cord.
12. method for repairing and mending as claimed in claim 11; It is characterized in that; This electrostatic protection element comprises at least one diode; This diode comprises a control electrode, one first electrode, one second electrode and semi-conductor layer, and this semiconductor layer is arranged at this control electrode top and is connected between this first electrode and this second electrode, and wherein this electrostatic protection element and this first patch cord overlapping are this second electrode and this first patch cord overlapping.
13. a method for repairing and mending is suitable for repairing the described active component array base board of claim 8, when wherein open circuit flaw (open defect) took place a signal line, this method for repairing and mending comprised:
With of the wherein end welding of this first patch cord with holding wire with this open circuit flaw;
At this second electrode and this first patch cord overlapping, with this second electrode and the welding of this first patch cord; And
With part control electrode and the welding of part second electrode, so that this second patch cord electrically connects through part control electrode, part second electrode and this first patch cord and the holding wire with this open circuit flaw.
14. an active component array base board is characterized in that, comprising:
One substrate has a viewing area and an external zones;
A plurality of pixels, arrayed is on this viewing area of this substrate;
Many signal line electrically connect with those pixels, and respectively this holding wire extend to this external zones from this viewing area respectively, and wherein a signal line has open circuit flaw (open defect); And
One preparing structure is disposed at this external zones, and this preparing structure comprises:
One first patch cord, staggered with a wherein end of those holding wires, and this first patch cord is for electrically floating;
One second patch cord;
One static discharges lead;
One electrostatic protection element; Being electrically connected at this second patch cord and this static discharges between the lead; This electrostatic protection element and this first patch cord are overlapping and be electrically insulated each other; Wherein this first patch cord has at least one pad with the wherein end with holding wire of this open circuit flaw; The overlapping of this electrostatic protection element and this first patch cord has at least one pad, so that this second patch cord electrically connects with the holding wire with this open circuit flaw through this electrostatic protection element and this first patch cord.
15. active component array base board as claimed in claim 14; It is characterized in that; This electrostatic protection element comprises at least one diode, and this diode comprises a control electrode, one first electrode, one second electrode and semi-conductor layer, and this semiconductor layer is arranged at this control electrode top and is connected between this first electrode and this second electrode; Wherein this electrostatic protection element and this first patch cord overlapping are this second electrode and this first patch cord overlapping, and this overlapping has this pad.
16. active component array base board as claimed in claim 14 is characterized in that, further comprises another electrostatic protection element, connects respectively this holding wire, and is adjacent to this first patch cord and this holding wire staggered place respectively.
17. an active component array base board is characterized in that, comprising:
One substrate has a viewing area and an external zones;
A plurality of pixels, arrayed is on this viewing area of this substrate;
Many signal line electrically connect with those pixels, and respectively this holding wire extend to this external zones from this viewing area respectively, and wherein a signal line has open circuit flaw (open defect); And
One preparing structure is disposed at this external zones, and this preparing structure comprises:
One first patch cord, staggered with a wherein end of those holding wires, and this first patch cord is for electrically floating;
One second patch cord;
One static discharges lead; And
One electrostatic protection element; Being electrically connected at this second patch cord and this static discharges between the lead; Wherein this electrostatic protection element comprises a plurality of diodes of serial connection each other; Respectively this diode comprises one first electrode, one second electrode, one and this second electrode control electrode and the semi-conductor layer that electrically connect; This semiconductor layer is positioned at this control electrode top, and is connected between this first electrode and this second electrode, and one of them first electrode and this static with this second electrode electric connection does not discharge the lead electric connection; And one of them second electrode and the electric connection of this second patch cord of not electrically connecting with this first electrode, and this first patch cord and one of them second electrode are overlapping;
Wherein this first patch cord and the holding wire with this open circuit flaw wherein an end staggered place, this second electrode and this first patch cord overlapping and part control electrode and the part second electrode overlapping all have at least one pad so that this second patch cord is through part control electrode, part second electrode and this first patch cord and have the holding wire electric connection of this open circuit flaw.
18. active component array base board as claimed in claim 17 is characterized in that, further comprises another electrostatic protection element, connects respectively this holding wire, and is adjacent to this first patch cord and this holding wire staggered place respectively.
CN2010101889575A 2010-05-24 2010-05-24 Active element array substrate and repair method thereof Active CN101866917B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010101889575A CN101866917B (en) 2010-05-24 2010-05-24 Active element array substrate and repair method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101889575A CN101866917B (en) 2010-05-24 2010-05-24 Active element array substrate and repair method thereof

Publications (2)

Publication Number Publication Date
CN101866917A CN101866917A (en) 2010-10-20
CN101866917B true CN101866917B (en) 2012-01-25

Family

ID=42958559

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101889575A Active CN101866917B (en) 2010-05-24 2010-05-24 Active element array substrate and repair method thereof

Country Status (1)

Country Link
CN (1) CN101866917B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6753885B2 (en) * 2018-04-16 2020-09-09 シャープ株式会社 How to fix defects in active matrix boards, display devices, and active matrix boards
CN113611689B (en) * 2021-08-06 2024-03-22 武汉天马微电子有限公司 Display panel and display device
TW202332072A (en) * 2022-01-19 2023-08-01 友達光電股份有限公司 Sensing device

Also Published As

Publication number Publication date
CN101866917A (en) 2010-10-20

Similar Documents

Publication Publication Date Title
TWI409558B (en) Display panel and method of repairing signal lines thereof
JP4583052B2 (en) Active matrix display device
CN101408681B (en) Display panel
CN102012593B (en) array substrate of liquid crystal display device
CN103034008B (en) The restorative procedure of the electrostatic prevention structure of liquid crystal panel and manufacture method thereof, connecting line
CN103163668B (en) Detection device for liquid crystal display device
CN101299124A (en) Array substrates of LCD devices
CN101907788A (en) Display device
US10204938B2 (en) Display panel, display apparatus, and method of repairing a signal line thereof
US9240399B2 (en) Active device array substrate and repairing method thereof
US7545450B2 (en) Display device comprising electrostatic discharge protection circuits, each circuit having one end connected to first and second conducting wires and another end connected to a corresponding signal line
CN101950110A (en) Display panel
TWI401492B (en) Active device array substrate and repairing method thereof
CN101866917B (en) Active element array substrate and repair method thereof
CN107589603A (en) Active matrix substrate and display device
CN107589604A (en) Defect correction method of active matrix substrate and manufacturing method of display device
CN107589605A (en) Defect correction method of active matrix substrate and manufacturing method of display device
CN107608149A (en) Active matrix substrate and display device
CN101813860B (en) Active element array substrate
CN100388491C (en) Circuit structure of display
WO2018176799A1 (en) Array substrate and open-circuit repair method therefor, and display apparatus
CN110109303B (en) Array substrate and defect repairing method thereof
CN101788739A (en) Display panel maintenance method and display panel
KR101354317B1 (en) Display device having electrostatic protection structure
JP4004050B2 (en) Active substrate, display device and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant