CN101859839A - LED chip - Google Patents

Abstract

The invention discloses a light emitting diode chip which mainly comprises a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least one indium-doped aluminum gallium nitride material layer and at least one tunneling junction layer. The first type doped semiconductor layer is arranged on the substrate, and the light emitting layer is arranged between the first type doped semiconductor layer and the second type doped semiconductor layer. The indium-doped aluminum gallium nitride material layer is arranged on at least one surface of the light-emitting layer, and the tunneling junction layer is arranged between the indium-doped aluminum gallium nitride material layer and the first type doped semiconductor layer and/or between the indium-doped aluminum gallium nitride material layer and the second type doped semiconductor layer, wherein the indium-doped aluminum gallium nitride material layer and the tunneling junction layer are positioned on the same side of the light-emitting layer. The light-emitting diode has lower operating voltage, flatter surface and lower leakage current, and effectively improves the quality of the light-emitting diode chip.

Description

LED chip

technical field

The invention relates to a semiconductor element, in particular to a light emitting diode (Light Emitting Diode, LED) chip.

Background technique

Light-emitting diodes are semiconductor components, and the material of the light-emitting chip can generally use III-V chemical elements, such as compound semiconductors such as gallium phosphide (GaP,), gallium arsenide (GaAs), and gallium nitride (GaN). By applying current to the above-mentioned compound semiconductors, through the combination of electron-hole pairs, electrical energy can be converted into light energy, and released in the form of light waves to achieve the effect of light emission. Since the light emitting phenomenon of the light emitting diode belongs to cold light, rather than through heating, the life of the light emitting diode can be as long as more than 100,000 hours, and there is no need for idling time. In addition, light-emitting diodes have the advantages of fast response (about 10 ^-9 seconds), small size, low power consumption, low pollution (mercury-free), high reliability, and suitable for mass production. Wide range, such as the light source of the scanner, the backlight of the LCD screen, the outdoor display billboard or the lighting equipment for the car, etc.

The known light-emitting diode is mainly composed of a light-emitting layer, an n-type doped semiconductor layer and a p-type doped semiconductor layer, wherein the n-type doped semiconductor layer and the p-type doped semiconductor layer are respectively disposed on both sides of the light-emitting layer. Generally speaking, due to the phenomenon of lattice mismatch between the materials of the above-mentioned layers, this will cause relatively large stress during the epitaxy process and reduce the quality of the epitaxy. In addition, due to the high resistance of the p-type doped semiconductor layer, there will be a large voltage drop at the joint between the p-type doped semiconductor layer and the light-emitting layer, so a high operating voltage is required to operate the light-emitting diode.

Contents of the invention

One of the technical problems to be solved by the present invention is to provide a light emitting diode chip, which has a lower operating voltage and a flatter surface, so as to solve the above problems.

The second technical problem to be solved by the present invention is to provide a light emitting diode chip with lower leakage current.

In order to solve the above-mentioned technical problems, a light-emitting diode chip of the present invention includes a substrate, a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light-emitting layer, and at least one aluminum gallium nitride doped with an indium dopant A material layer (Indoped Al _x Ga _1-x N based material layer, 0≤x<1), at least one tunneling junction layer, a first electrode and a second electrode. The first type doped semiconductor layer is disposed on the substrate, the second type doped semiconductor layer is disposed above the first type doped semiconductor layer, and the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer between layers. The aluminum gallium nitride-based material layer doped with indium dopant is arranged on at least one surface of the light-emitting layer, and the tunnel junction layer is arranged on the aluminum gallium nitride-based material layer doped with indium dopant and the first type doped Between the semiconductor layers and/or between the indium-doped aluminum gallium nitride-based material layer and the second-type doped semiconductor layer, wherein the indium-doped aluminum gallium nitride-based material layer and the tunnel junction layer are located on the same side of the luminescent layer. The first electrode is disposed on the first-type doped semiconductor layer, and the second electrode is disposed on the second-type doped semiconductor layer.

In addition, the present invention further proposes a light-emitting diode chip, which includes a substrate, a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light-emitting layer, and at least one undoped aluminum gallium nitride-based material layer (undoped _{AlxGa1 -xN} based material layer, 0≤x<1), at least one tunnel junction layer, a first electrode and a second electrode. The first type doped semiconductor layer is disposed on the substrate, the second type doped semiconductor layer is disposed above the first type doped semiconductor layer, and the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer between layers. The undoped AlGaN-based material layer is disposed on at least one surface of the light-emitting layer, and the tunnel junction layer is disposed between the undoped AlGaN-based material layer and the first-type doped semiconductor layer And/or between the undoped AlGaN-based material layer and the second-type doped semiconductor layer, wherein the undoped AlGaN-based material layer and the tunnel junction layer are located on the same side of the light-emitting layer. The first electrode is disposed on the first-type doped semiconductor layer, and the second electrode is disposed on the second-type doped semiconductor layer.

An energy gap width of the tunnel junction layer may be greater than an energy gap width of the light emitting layer.

The tunnel bonding layer includes a first-type aluminum gallium nitride-based material layer and a second-type aluminum gallium nitride-based material layer, wherein the second-type aluminum gallium nitride-based material layer is arranged on the first-type aluminum gallium nitride-based material layer on one surface of the material layer.

The first-type AlGaN-based material layer may have silicon dopant, indium dopant or a combination thereof, and the second-type AlGaN-based material layer may have magnesium dopant, indium dopant or a combination thereof.

The aluminum gallium nitride-based material layer/undoped aluminum gallium nitride-based material layer doped with indium dopant is arranged on the upper surface of the light-emitting layer, and the second-type aluminum gallium nitride-based material layer is arranged on the doped aluminum gallium nitride-based material layer. Between the indium-doped AlGaN-based material layer/undoped AlGaN-based material layer and the first-type AlGaN-based material layer.

The aluminum gallium nitride-based material layer/undoped aluminum gallium nitride-based material layer doped with indium dopant is arranged on the lower surface of the light-emitting layer, and the first-type aluminum gallium nitride-based material layer is arranged on the doped aluminum gallium nitride-based material layer. Between the indium-doped AlGaN-based material layer/undoped AlGaN-based material layer and the second-type AlGaN-based material layer.

In addition, the first-type aluminum gallium nitride-based material layer may also have magnesium dopant, indium dopant, or a combination thereof, and the second-type aluminum gallium nitride-based material layer may have silicon dopant, indium dopant, or a combination thereof. combination. The aluminum gallium nitride-based material layer/undoped aluminum gallium nitride-based material layer doped with indium dopant is arranged on the upper surface of the light-emitting layer, and the second-type aluminum gallium nitride-based material layer is arranged on the doped aluminum gallium nitride-based material layer. Between the indium-doped AlGaN-based material layer/undoped AlGaN-based material layer and the first-type AlGaN-based material layer. The aluminum gallium nitride-based material layer/undoped aluminum gallium nitride-based material layer doped with indium dopant is arranged on the lower surface of the light-emitting layer, and the first-type aluminum gallium nitride-based material layer is arranged on the doped Between the indium-doped AlGaN-based material layer/undoped AlGaN-based material layer and the second-type AlGaN-based material layer.

The first-type doped semiconductor layer includes a buffer layer, a nucleation layer and a first-type contact layer. The buffer layer is disposed on the substrate, the crystal layer is disposed on the buffer layer, and the first type contact layer is disposed on the crystal layer.

The second-type doped semiconductor layer includes a second-type contact layer.

In summary, since the tunnel junction layer can effectively reduce the voltage drop between the first/second type doped semiconductor layer and the light-emitting layer, the light-emitting diode of the present invention has a lower operating voltage. In addition, the AlGaN-based material layer doped with indium dopant can make the light-emitting diode chip have a flatter surface, while the undoped AlGaN-based material layer can make the light-emitting diode chip have a lower leakage current. Therefore, the above-mentioned excellent characteristics can effectively improve the quality of the LED chip of the present invention.

Description of drawings

Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

1 is a schematic cross-sectional view of a light emitting diode chip according to Embodiment 1 of the present invention;

2 is a schematic cross-sectional view of a light emitting diode chip according to Embodiment 2 of the present invention;

3 is a schematic cross-sectional view of a light emitting diode chip according to Embodiment 3 of the present invention;

FIG. 4 is a schematic cross-sectional view of an LED chip according to Embodiment 4 of the present invention.

Explanation of the reference signs in the figure:

100, 200, 300, 400 are LED chips, 110 is the substrate,

120 is a first-type doped semiconductor layer, 122 is a buffer layer, 124 is a crystal layer,

126 is the first type contact layer, 130 is the second type doped semiconductor layer,

132 is the second type contact layer, 140 is the light emitting layer,

150 and 250 are aluminum gallium nitride-based material layers doped with indium dopant,

160, 260, 360, 460 are tunnel bonding layers,

162, 262, 362, 462 are first-type aluminum gallium nitride-based material layers,

164, 264, 364, 464 are second-type aluminum gallium nitride-based material layers,

170 is the first electrode, 180 is the second electrode.

Detailed ways

Example 1

FIG. 1 is a schematic cross-sectional view of an LED chip according to Embodiment 1 of the present invention. Referring to FIG. 1 , the LED chip 100 of the present invention includes a substrate 110, a first-type doped semiconductor layer 120, a second-type doped semiconductor layer 130, a light-emitting layer 140, and an aluminum gallium nitride-based material layer doped with indium dopant. (In doped Al _x Ga _1-x N based material layer, 0≦x<1) 150 , a tunneling junction layer 160 , a first electrode 170 and a second electrode 180 . The first type doped semiconductor layer 120 is disposed on the substrate 110, the second type doped semiconductor layer 130 is disposed above the first type doped semiconductor layer 120, and the light emitting layer 140 is disposed between the first type doped semiconductor layer 120 and the first type doped semiconductor layer 120. Between the second type doped semiconductor layers 130 . In addition, the first electrode 170 is disposed on the first-type doped semiconductor layer 120 , and the second electrode 180 is disposed on the second-type doped semiconductor layer 130 . When the forward current is passed through the first electrode 170 and the second electrode 180, the electrons and holes will be transferred to the light-emitting layer 140 through the first-type doped semiconductor layer 120 and the second-type doped semiconductor layer 130 to combine, And release energy in the form of light waves to achieve the effect of light.

In this embodiment, the AlGaN-based material layer 150 doped with indium dopant is disposed on the upper surface of the light emitting layer 140 . Since the present invention sets the aluminum gallium nitride-based material layer 150 doped with indium dopant to slow down the phenomenon of lattice mismatch between the second-type doped semiconductor layer 130 and the material of the light-emitting layer 140, it can reduce the cost of the light-emitting diode chip 100 during epitaxy. stress generated when. At the same time, since the indium dopant has better surface migration capability, the light emitting diode chip 100 can form a flatter surface. In detail, since the atomic radius of the indium atom is greater than that of the gallium atom, the indium dopant can reduce the vacancy density of the nitrogen element, so that the ratio of V/III can be increased during the epitaxy process, and the luminescence can be improved. Dislocation defects in diode chip 100 .

Referring to FIG. 1 again, in this embodiment, the tunnel junction layer 160 is disposed between the aluminum gallium nitride-based material layer 150 doped with indium dopant and the second-type doped semiconductor layer 130, so that the second-type doped semiconductor layer 130 can be reduced. The voltage drop between the doped semiconductor layer 130 and the light-emitting layer 140 , so the light-emitting diode chip 100 of the present invention has a lower operating voltage. In addition, when the energy gap width of the tunnel bonding layer 160 is greater than the energy gap width of the light emitting layer 140 , the light emitting diode chip 100 has better light emitting characteristics.

As mentioned above, the tunnel junction layer 160 includes a first-type aluminum gallium nitride-based (Al _x Ga _1-x N, 0≤x<1) material layer 162 and a second-type aluminum gallium nitride-based (Al _x Ga _1−x N, 0≦x<1) material layer 164 . In this embodiment, the second-type AlGaN-based material layer 164 is disposed between the In-doped AlGaN-based material layer 150 and the first-type AlGaN-based material layer 162 . In addition, the first-type AlGaN-based material layer 162 can be an n-type AlGaN-based material layer, and the second-type AlGaN-based material layer 164 can be a p-type AlGaN-based material layer (such , the first-type doped semiconductor layer 120 and the second-type doped semiconductor layer 130 are respectively an n-type AlGaN-based material layer and a p-type AlGaN-based material layer).

In order to further reduce the operating voltage of the light-emitting diode chip 100, the present invention can dope silicon dopant, indium dopant or a combination thereof in the first-type AlGaN-based material layer 162, and can also dope magnesium dopant, indium dopant substance or its combination in the second-type AlGaN-based material layer 164 . It should be noted that, especially when silicon dopant and indium dopant are simultaneously doped in the first-type AlGaN-based material layer 162, and magnesium dopant and indium dopant are simultaneously doped in the second-type AlGaN-based material layer 162. When the AlGa-based material layer 164 is formed, the LED chip 100 can have a lower operating voltage.

In addition, the AlGaN-based material layer 150 doped with indium dopant, the first-type AlGaN-based material layer 162 and the second-type AlGaN-based material layer 164 are, for example, metal-organic chemical vapor phase Deposition method (Metal Organic Chemical Vapor Deposition, MOCVD), and its preferred thickness is between 0.5nm-20nm, and its preferred growth temperature is between 800°C-1200°C.

The materials and structures of the substrate and each thin film layer of the LED chip 100 will be described in sections below.

The material of the substrate 110 includes alumina single crystal (Sapphire), silicon carbide (6H-SiC or 4H-SiC), silicon (Si), zinc oxide (ZnO), gallium arsenide (GaAs), spinel (MgAl ₂ O ₄ ) or other single crystal oxides whose lattice constant is close to that of nitride semiconductors, and the material composition of the substrate 110 is, for example, C-Plane, E-Plane or A-Plane.

Referring again to FIG. 1 , the first-type doped semiconductor layer 120 includes a buffer layer 122 , a crystal layer 124 and a first-type contact layer 126 . The buffer layer 122 is disposed on the substrate 110 and is made of aluminum gallium indium nitride (Al _a Ga _b In _1-ab N, 0≤a<1, 0≤b<1, a+b≤1), for example. . The crystallization layer 124 is disposed on the buffer layer 122 , and its main function is to make the subsequent epitaxy more rapid, and the lattice order of the epitaxy is more orderly, and the first-type contact layer 126 is disposed on the crystallization layer 124 .

As mentioned above, the second-type doped semiconductor layer 130 includes the second-type contact layer 132 . In this embodiment, the first-type contact layer 126 is an n-type contact layer, and the second-type contact layer 132 is a p-type contact layer. The characteristics are adjusted according to the type and concentration of heteroionic impurities. In addition, the light-emitting layer 140 is, for example, a multiple quantum well structure composed of indium gallium nitride (In _a Ga _1-a N, 0≤a<1), and different proportions of indium gallium elements can make it emit different wavelengths. of light.

Incidentally, to improve the electrical properties of the LED chip 100 , the first-type doped semiconductor layer 120 may further include a first-type coating layer (not shown in the figure) disposed on the first-type contact layer 126 . The second-type doped semiconductor layer 130 may further include a second-type cladding layer (not shown in the figure) disposed between the second-type contact layer 132 and the light emitting layer 140 . In addition, the tunnel bonding layer 160 of the present embodiment has the characteristics of a covering layer at the same time, so that the light emitting diode chip 100 can have better electrical characteristics without disposing the second type covering layer.

It is worth noting that the present invention can use an undoped aluminum gallium nitride based material layer (undoped, Al _x Ga _1-x N based material layer, 0≤x<1) to replace the aluminum nitride doped with indium dopant Gallium-based material layer 150 . In this way, the present invention can greatly reduce the leakage current phenomenon of the LED chip 100 so that it has better electrical characteristics. Incidentally, the undoped AlGaN-based material layer is formed, for example, by metal-organic chemical vapor deposition, and its preferred thickness is between 0.5nm and 20nm, and its preferred growth The temperature is between 800°C and 1200°C.

In addition, the present invention does not limit that the AlGaN-based material layer 150 doped with indium dopant and the tunnel junction layer 160 can only be located between the second-type doped semiconductor layer 130 and the light emitting layer 140 . Hereinafter, other embodiments will be listed and light emitting diodes with other structures of the present invention will be described with reference to the accompanying drawings.

Example 2

FIG. 2 is a schematic cross-sectional view of an LED chip according to Embodiment 2 of the present invention. Referring to FIG. 2 , the light emitting diode chip 200 of embodiment 2 is similar to the light emitting diode chip 100 of embodiment 1 (as shown in FIG. 1 ), the difference lies in the aluminum gallium nitride-based material layer 250 doped with indium dopant and the tunneling The arrangement position of the bonding layer 260 is different. In this embodiment, the aluminum gallium nitride-based material layer 250 doped with indium dopant is disposed on the lower surface of the light emitting layer 140, and the tunnel junction layer 260 is disposed on the aluminum gallium nitride-based material doped with indium dopant. layer 250 and the first type doped semiconductor layer 120 . In addition, the tunnel junction layer 260 includes a first-type AlGaN-based material layer 262 and a second-type AlGaN-based material layer 264, wherein the first-type AlGaN-based material layer 262 is disposed on an indium-doped between the high-quality AlGaN-based material layer 250 and the second-type AlGaN-based material layer 264 .

Similar to the aforementioned reasons, the aluminum gallium nitride-based material layer 250 doped with indium dopants can alleviate the lattice mismatch between the materials of the first-type doped semiconductor layer 120 and the light-emitting layer 140, so that the light-emitting diode chip 200 can be formed more efficiently. flat surface. In addition, the tunnel junction layer 260 can reduce the voltage drop between the first-type doped semiconductor layer 120 and the light-emitting layer 140 , so that the light-emitting diode chip 200 has a lower operating voltage. Of course, the AlGaN-based material layer 250 doped with indium dopant can also be replaced by an undoped AlGaN-based material layer, so that the LED chip 200 has a lower leakage current. Incidentally, the tunnel bonding layer 260 of this embodiment can also be used as a coating layer instead of the aforementioned first-type coating layer to improve the electrical characteristics of the LED chip 200 .

It should be noted that the present invention does not limit the quantity of the AlGaN material layer and the tunnel junction layer doped with indium dopant. For example, the present invention can be combined with the light-emitting diode chips 100 and 200 of Embodiment 1 and Embodiment 2, so that the aluminum gallium nitride-based material layer doped with indium dopant and the tunnel junction layer can be located between the light-emitting layer and the first between the doped semiconductor layers, and between the light emitting layer and the second doped semiconductor layer. Those skilled in the art can deduce the above-mentioned situation by themselves, and it is not shown in the drawings here.

In addition, the present invention does not limit the first-type AlGaN-based material layer to be an n-type AlGaN-based material layer, and the second-type AlGaN-based material layer to be a p-type AlGaN-based material layer. Hereinafter, other embodiments and accompanying drawings will be used to illustrate other forms of light emitting diodes of the present invention.

Embodiment 3, Embodiment 4

3 is a schematic cross-sectional view of a light emitting diode chip according to embodiment 3 of the present invention, and FIG. 4 is a schematic cross-sectional view of a light emitting diode chip according to embodiment 4 of the present invention. Referring to FIG. 3 , the LED chip 300 of Embodiment 3 is similar to the LED chip 100 of Embodiment 1 (as shown in FIG. 1 ), the difference lies in the first-type aluminum gallium nitride-based material layer 362 of the tunnel junction layer 360 is a p-type AlGaN-based material layer, and the second-type AlGaN-based material layer 364 is an n-type AlGaN-based material layer. Referring to FIG. 4 , the light emitting diode chip 400 of embodiment 4 is similar to the light emitting diode chip 200 of embodiment 2 (as shown in FIG. 2 ), the difference lies in the first type aluminum gallium nitride-based material layer 462 of the piercing bonding layer 460 is a p-type AlGaN-based material layer, and the second-type AlGaN-based material layer 464 is an n-type AlGaN-based material layer.

Based on the above, referring to FIG. 3 and FIG. 4 at the same time, in these two embodiments, the first-type aluminum gallium nitride-based material layer may have magnesium dopant, indium dopant or a combination thereof, and the second-type aluminum nitride The gallium-based material layers 364, 464 may have silicon dopants, indium dopants, or a combination thereof. It is worth noting that, especially when magnesium dopant and indium dopant are simultaneously doped in the first type AlGaN-based material layers 362, 462, and silicon dopant and indium dopant are simultaneously doped in the second type When the AlGaN-based material layer 364 , 464 is used, the LED chip 300 , 400 can have a lower operating voltage. Of course, in the morphological structures of these two embodiments, the first-type doped semiconductor layer 120 and the second-type doped semiconductor layer 130 need to correspond to the p-type aluminum gallium nitride-based material layer and the n-type aluminum nitride layer respectively. Gallium-based material layer.

Incidentally, in the present invention, the AlGaN-based material layers 150 and 250 (as shown in FIG. 3 and FIG. 4 ) doped with impurity dopant can be replaced by an undoped AlGaN-based material layer, so that The LED chip 200 has a lower leakage current. In addition, the present invention can be combined with the light-emitting diode chips 300 and 400 of Embodiment 3 and Embodiment 4, so that the aluminum gallium nitride-based material layer doped with indium dopant and the tunnel junction layer can be located between the light-emitting layer and the first doped between the semiconductor layers, and between the light-emitting layer and the second doped semiconductor layer. Those skilled in the art can deduce the above-mentioned situation by themselves, and it is not shown in the drawings here.

In the light-emitting diode chips 100, 200, 300, and 400 of the above-mentioned embodiments (as shown in FIG. 1, FIG. 2, FIG. 3, and FIG. 4), the aluminum gallium nitride-based material layer (or not The doped AlGaN-based material layer) and the tunnel junction layer are located between the light emitting layer and the first doped semiconductor layer, or between the light emitting layer and the second doped semiconductor layer. However, the present invention does not limit the indium-doped AlGaN-based material layer (or the undoped AlGaN-based material layer) and the tunnel junction layer to only be located at the aforementioned two positions. For example, it can also be located between the second electrode and the second-type contact layer, or between the second-type contact layer and the second-type coating layer, or between the first-type coating layer and the first-type contact layer. Equal position between the layers to make the LED chips have better quality.

In summary, the LED chip of the present invention has at least the following advantages:

1. Since the aluminum gallium nitride-based material layer doped with indium dopant is provided, the surface of the light-emitting diode chip can be relatively flat, and the dislocation defects generated during the epitaxy of the light-emitting diode chip can be improved;

2. Since the undoped aluminum gallium nitride material layer is set, the leakage current of the light-emitting diode chip can be reduced to improve its electrical characteristics;

3. Since the tunnel junction layer can effectively reduce the voltage drop between the first/second type doped semiconductor layer and the light-emitting layer, the light-emitting diode chip has a lower operating voltage;

4. Since the first-type aluminum gallium nitride-based material layer is doped with magnesium dopant and indium dopant at the same time, and the second-type aluminum gallium nitride-based material layer is doped with silicon dopant and indium dopant at the same time, it can further reduce the The operating voltage of the LED chip;

5. The tunnel bonding layer also has the characteristics of the covering layer, so that the light-emitting diode chip can have better electrical characteristics without providing a covering layer.

The present invention has been described in detail through the above examples, but these are not intended to limit the present invention. Without departing from the principle of the present invention, those skilled in the art can also make many modifications and improvements, which should also be regarded as the protection scope of the present invention.

Claims (22)

1. A light-emitting diode chip, characterized in that: comprising: Substrate; a first-type doped semiconductor layer disposed on the substrate; a second-type doped semiconductor layer disposed above the first-type doped semiconductor layer; a light-emitting layer disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer; at least one aluminum gallium nitride-based material layer doped with indium dopant, disposed on at least one surface of the light-emitting layer; At least one tunnel junction layer, disposed between the indium-doped aluminum gallium nitride-based material layer and the first-type doped semiconductor layer and/or the indium-doped aluminum gallium nitride-based material layer and the second-type doped semiconductor layer, wherein the indium-doped aluminum gallium nitride-based material layer and the tunnel junction layer are located on the same side of the light-emitting layer; a first electrode disposed on the first-type doped semiconductor layer; and The second electrode is arranged on the second type doped semiconductor layer. 2 . The light emitting diode chip according to claim 1 , wherein the energy gap width of the tunnel junction layer is larger than the energy gap width of the light emitting layer. 3 . 3. The LED chip according to claim 1, wherein the tunnel bonding layer comprises: a first-type aluminum gallium nitride-based material layer; and The second-type AlGaN-based material layer is disposed on one surface of the first-type AlGaN-based material layer. 4. The light-emitting diode chip according to claim 3, characterized in that: the first-type aluminum gallium nitride-based material layer has silicon dopant, indium dopant or a combination thereof, and the second-type aluminum gallium nitride-based The material layer has magnesium doping, indium doping, or a combination thereof. 5. The light-emitting diode chip according to claim 4, characterized in that: the aluminum gallium nitride-based material layer doped with indium dopant is disposed on the upper surface of the light-emitting layer, and the second-type aluminum nitride The gallium-based material layer is disposed between the aluminum-gallium-nitride-based material layer doped with indium dopant and the first-type aluminum-gallium-nitride-based material layer. 6. The light-emitting diode chip according to claim 4, characterized in that: the aluminum gallium nitride-based material layer doped with indium dopant is disposed on the lower surface of the light-emitting layer, and the first-type aluminum nitride The Ga-based material layer is disposed between the In-doped AlGaN-based material layer and the second-type AlGaN-based material layer. 7. The light-emitting diode chip according to claim 3, wherein the first-type aluminum gallium nitride-based material layer has magnesium dopant, indium dopant or a combination thereof, and the second-type aluminum gallium nitride The system material layer has silicon dopant, indium dopant or combination thereof. 8. The light-emitting diode chip according to claim 7, wherein the aluminum gallium nitride-based material layer doped with indium dopant is disposed on the upper surface of the light-emitting layer, and the second-type aluminum nitride The gallium-based material layer is disposed between the aluminum-gallium-nitride-based material layer doped with indium dopant and the first-type aluminum-gallium-nitride-based material layer. 9. The light-emitting diode chip according to claim 7, characterized in that: the aluminum gallium nitride-based material layer doped with indium dopant is disposed on the lower surface of the light-emitting layer, and the first-type aluminum nitride The Ga-based material layer is disposed between the In-doped AlGaN-based material layer and the second-type AlGaN-based material layer. 10. The LED chip according to claim 1, wherein the first type doped semiconductor layer comprises: a buffer layer disposed on the substrate; a crystalline layer disposed on the buffer layer; and The first type contact layer is arranged on the crystal layer. 11. The LED chip according to claim 1, wherein the second-type doped semiconductor layer comprises a second-type contact layer. 12. A light-emitting diode chip, characterized in that: comprising: Substrate; a first-type doped semiconductor layer disposed on the substrate; a second-type doped semiconductor layer disposed above the first-type doped semiconductor layer; a light-emitting layer disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer; At least one undoped aluminum gallium nitride-based material layer is disposed on at least one surface of the light-emitting layer; At least one tunnel junction layer is disposed between the undoped AlGaN-based material layer and the first-type doped semiconductor layer and/or between the undoped AlGaN-based material layer and the first-type doped semiconductor layer Between the two-type doped semiconductor layers, wherein the undoped aluminum gallium nitride-based material layer and the tunnel junction layer are located on the same side of the light-emitting layer; a first electrode disposed on the first-type doped semiconductor layer; and The second electrode is arranged on the second type doped semiconductor layer. 13. The light emitting diode chip according to claim 12, wherein the energy gap width of the tunnel junction layer is larger than the energy gap width of the light emitting layer. 14. The LED chip according to claim 12, wherein the tunnel bonding layer comprises: a first-type aluminum gallium nitride-based material layer; and The second-type AlGaN-based material layer is disposed on one surface of the first-type AlGaN-based material layer. 15. The light-emitting diode chip according to claim 14, characterized in that: the first-type aluminum gallium nitride-based material layer has silicon dopant, indium dopant or a combination thereof, and the second-type aluminum gallium nitride-based The material layer has magnesium doping, indium doping, or a combination thereof. 16. The light-emitting diode chip according to claim 15, wherein the undoped aluminum gallium nitride-based material layer is disposed on the upper surface of the light-emitting layer, and the second-type aluminum gallium nitride-based material layer is The material layer is disposed between the undoped AlGaN-based material layer and the first-type AlGaN-based material layer. 17. The light-emitting diode chip according to claim 15, wherein the undoped aluminum gallium nitride-based material layer is disposed on the lower surface of the light-emitting layer, and the first-type aluminum gallium nitride-based material layer is The material layer is disposed between the undoped AlGaN-based material layer and the second-type AlGaN-based material layer. 18. The light-emitting diode chip according to claim 14, wherein the first-type aluminum gallium nitride-based material layer has magnesium dopant, indium dopant or a combination thereof, and the second-type aluminum gallium nitride The system material layer has silicon dopant, indium dopant or combination thereof. 19. The light-emitting diode chip according to claim 18, characterized in that: the undoped aluminum gallium nitride-based material layer is disposed on the upper surface of the light-emitting layer, and the second-type aluminum gallium nitride-based material layer The material layer is disposed between the undoped AlGaN-based material layer and the first-type AlGaN-based material layer. 20. The light-emitting diode chip according to claim 18, wherein the undoped aluminum gallium nitride-based material layer is disposed on the lower surface of the light-emitting layer, and the first-type aluminum gallium nitride-based material layer is The material layer is disposed between the undoped AlGaN-based material layer and the second-type AlGaN-based material layer. 21. The LED chip according to claim 12, wherein the first type doped semiconductor layer comprises: a buffer layer disposed on the substrate; a crystalline layer disposed on the buffer layer; and The first type contact layer is arranged on the crystal layer. 22. The LED chip according to claim 12, wherein the second-type doped semiconductor layer comprises a second-type contact layer.

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