CN101814904B - Quartz crystal resonator and manufacture process thereof - Google Patents
Quartz crystal resonator and manufacture process thereof Download PDFInfo
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- CN101814904B CN101814904B CN2010101594738A CN201010159473A CN101814904B CN 101814904 B CN101814904 B CN 101814904B CN 2010101594738 A CN2010101594738 A CN 2010101594738A CN 201010159473 A CN201010159473 A CN 201010159473A CN 101814904 B CN101814904 B CN 101814904B
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- 239000013078 crystal Substances 0.000 title claims abstract description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000010453 quartz Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title abstract description 7
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000003466 welding Methods 0.000 claims abstract description 28
- 239000012212 insulator Substances 0.000 claims abstract description 27
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 23
- 244000273256 Phragmites communis Species 0.000 claims abstract description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000007789 sealing Methods 0.000 abstract description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 4
- 241000587161 Gomphocarpus Species 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 description 25
- 238000005476 soldering Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910001021 Ferroalloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
The invention relates to a quartz crystal resonator and a manufacture process thereof, belonging to the technical field of quartz crystal resonator structures. The quartz crystal resonator comprises a substrate (2), wherein a shell (1) is coated on the upper part of the substrate (2); the substrate (2), insulators (5) and a lead wire (6) are sintered to form a base; and the nail head of the lead wire (6) is arranged in the shell (1) by spot welding for supporting reeds (4) of a quartz wafer. The resonator is characterized in that the distance between outer ends of the two reeds (4) is 4.5mm or less, and the distance between centers of the two insulators (5) is 2.5mm or less; the height of the substrate (2) is 0.7mm or less, and the height of the quartz wafer is 4*1.8mm or less; and the press sealing mode is electric resistance welding encapsulation. The resonator realizes miniaturization of the quartz crystal resonator, combines the crystal technology of the surface mounted quartz crystal resonator and the press sealing technology of the lead carrying type quartz crystal resonator to produce small-size surface mount products of the quartz crystal resonator, and is a small-size surface mounting type quartz crystal resonator in the electric resistance welding mode.
Description
Technical field
The present invention relates to a kind of quartz-crystal resonator and processing technology, belong to the quartz-crystal resonator technical field of structures.
Background technology
The quartz-crystal resonator operation principle is a kind of resonating device that utilizes the inverse piezoelectric effect of quartz crystal (silicon dioxide, single crystals structure α quartzy) to process.Quartz-crystal resonator has become the vitals of digital code information society from now at present, and its field, staple market is that the communications field, industry are used, the people's livelihood is used electronic device field; That quartz crystal unit has is high-accuracy, the characteristics of high stability, needing to be widely used in the various kinds of equipment, instrument, electronic product of frequency stabilization and frequency-selecting, and be indispensable key element in the current electronic product.Because the development trend of electronic product is a multifunction: functions such as Internet, E-Mail, GPS, photograph, shooting, large scale color LCD screen are adopted by a large amount of; The circuit board welding develops into Reflow Soldering by wave-soldering; So surface mount and highly low miniaturization product become the developing direction of quartz-crystal resonator, for example the people's livelihood such as 3G mobile is controlled at 2.5mm and following with electronics product requirement height.
The type of quartz-crystal resonator mainly contains wire type pedestal and surface attaching type pedestal at present, and the wire type pedestal is as shown in Figure 1, is also referred to as 49s/SMD type quartz-crystal resonator; Its process stabilizing, price are low; Basically all produce at home, but it can't accomplish miniaturization that reason is:
1, quartz wafer is of a size of 8mm*2mm;
2, soldering and sealing mode is an electric resistance welding, and when substrate height during less than 0.7mm, STRESS VARIATION is big behind the press seal, and substrate deformation causes quartz-crystal resonator frequency scattered error big, surpasses 30ppm and not controlled, can't satisfy specification.
The surface attaching type pedestal is as shown in Figure 3; Its substrate structure is on pottery, to add becket, because complex structure, domestic technology is immature; And SMD type quartz-crystal resonator soldering and sealing mode is parallel weldering; Domestic production equipment can not guarantee the soldering and sealing precision, so this quartz crystal resonator base is produced in Japan basically, causes SMD type quartz-crystal resonator production cost much larger than 49s/SMD type product.
Summary of the invention
The object of the present invention is to provide a kind of not enough point that can remedy said two products; And the advantage of mating surface pasting type SMD product and wire type 49s product; Be applicable to that to the requirement of electronic product height of contour at 2.5mm and following, the circuit board welding manner is Reflow Soldering; Or height of contour is at 2mm and following, and the circuit board welding manner is the quartz-crystal resonator that the cost of wave-soldering mode is low, volume is little.
Quartz-crystal resonator of the present invention, realize through following technical scheme:
Quartz-crystal resonator comprises the substrate 2 of top covering shell 1, and substrate 2 constitutes pedestals with insulator 5, lead-in wire 6, connects on the ailhead of lead-in wire 6 to be located at the reed 4 that is used to support quartz wafer in the shell 1, it is characterized in that
Two reeds, 4 outer end spacing A-B are 4.5mm and following; Two insulators, 5 center distance are 2.5mm and following; The height of substrate 2 is 0.7mm and following, and quartz wafer is 4*1.8mm and following, frequency range 10MHz-50MHz; Overtone frequency scope 30MHz-125MHz, the press seal mode encapsulates for the electric resistance welding mode.
Further, said two reeds, 4 outer end spacings are 3.5-4.5mm, two insulators, 5 center distance 2-2.5mm, and quartz wafer is (3.5-4) * 1.8mm, the height of substrate 2 is 0.4-0.7mm.
Angle a between said reed 4 and the substrate 2 is 6～8 ° of oblique angles.
Resonator length is at 7mm and following, and width is at 4mm and following, and wire type resonator height is at 1.8mm and following; The substrate of surface attaching type resonator is equipped with pad 32 times, and pad 3 has the opening 7 and groove 8 that lead-in wire 6 passes, and the height of surface attaching type resonator is at 2.5mm and following.
Further, resonator is long to be 6-7mm, and width is 3-4mm, and wire type resonator height is 1.5-1.8mm, and surface attaching type resonator height is 2-2.5mm.
Quartz-crystal resonator, concrete scheme one does
1) quartz wafer is selected: 4*1.8mm quartz wafer, frequency range 10MHz-50MHz; Overtone frequency scope 30MHz-125MHz;
2) shell: the wide * height of the long * of shell sizes is 6.5mm*1.20mm*0.15mm;
3) substrate: the wide * height of the long * of sizes of substrate is 6.5mm*3.75mm*0.7mm;
4) insulator: the diameter * height of insulator sizes is φ 1.1mm*0.7mm.
Concrete scheme two does
1) quartz wafer is selected: the 3.5*1.8mm quartz wafer, and frequency range is from 10MHz-50MHz; The overtone frequency scope is from 30MHz-125MHz;
2) shell: the wide * height of the long * of shell sizes is 6.5mm*1.0mm*0.15mm;
3) substrate: the wide * height of the long * of sizes of substrate is 6.5mm*3.75mm*0.5mm;
4) insulator: the diameter * height of edge size is φ 1.1mm*0.5mm.
The processing technology of quartz-crystal resonator, it comprises the steps
(1), and does the nickel plating wicking and handle with insulator 5, lead-in wire 6, electroplate substrate 2 sinter moldings;
(2) spot welding reed 4 on substrate lead-in wire ailhead;
(3) with 4*1.8mm and following specification quartz wafer, be connected on the reed 4 with conducting resinl;
(4) carry out the frequency adjustment;
(5) encapsulate completion with the electric resistance welding mode, process the wire type quartz-crystal resonator.
Also comprise
(6) put the insulation spacer 3 that has lead-in wire 6 openings that pass 7 and groove 8, lead-in wire 6 is bended in opening 7 and the groove 8 of inserted shim 3, process the surface attaching type quartz-crystal resonator.
Quartz-crystal resonator of the present invention has been realized the quartz-crystal resonator miniaturization; Utilize the wafer technologies of surface sticked quartz crystal resonator to combine with the pressure sealing technology of band wire type quartz-crystal resonator; Product is pasted on production small size quartz-crystal resonator surface, is the small size surface attaching type quartz-crystal resonator under the electric resistance welding mode.
Quartz-crystal resonator of the present invention can remedy the deficiency of existing two kinds of products of prior art, and the advantage of mating surface pasting type and wire type is applicable to that to the requirement of electronic product height of contour at 2.5mm and following, the circuit board welding manner is Reflow Soldering; Or height of contour is at 2mm and following, and the circuit board welding manner is that the people's livelihood of wave-soldering mode is used the electronics product scope, like novel electron products such as 3G mobile, silicon tuners; Cost is low, volume is little, can substitute the high surface of present price and paste quartz-crystal resonator.
Description of drawings
Fig. 1: prior art 49s/SMD type quartz-crystal resonator structural representation;
The vertical view of Fig. 2: Fig. 1;
Fig. 3: prior art SMD type quartz-crystal resonator structural representation;
The left view of Fig. 4: Fig. 3
The upward view of Fig. 5: Fig. 3;
The rearview of Fig. 6: Fig. 3;
Fig. 7: the embodiment of the invention 1 wire type quartz-crystal resonator structural representation;
Fig. 8: the embodiment of the invention 2 surface attaching type quartz-crystal resonator structural representations.
1, shell, 2, substrate, 3, pad, 4, reed, 5, insulator, 6, lead-in wire, 7, opening, 8, groove.
Embodiment
Following with reference to accompanying drawing, provide embodiment of the present invention, be used for formation of the present invention is further specified.
Embodiment 1
With reference to figure 7, quartz-crystal resonator comprises the substrate 2 of top covering shell 1; Substrate 2 sinters pedestal into insulator 5, lead-in wire 6, and spot welding connects and is located at that spacing is 4.5mm between 4, two reeds of reed, the 4 outer end A that are used to support quartz wafer in the shell 1, the B on the ailhead of lead-in wire 6; Two insulator 5 center distance 2.5mm; The height of substrate 2 is 0.7mm, and quartz wafer is 4*1.8mm, and the press seal mode between shell 1 and the pedestal encapsulates for the electric resistance welding mode; Angle a is 6～8 ° of oblique angles between reed 4 and the substrate 2.
Wire type quartz-crystal resonator length is at 7mm, and width is at 4mm, and height is at 1.8mm.
Foundation structure analysis contrast
49s/SMD type, SMD type, 7040 type quartz-crystal resonator sizes, structure are following:
| ? | Long | Wide | High | Substrate material | Packing forms | Wafer size |
| Fig. 1: band wire type | 11.4 | 4.7 | 4.0 | Ferroalloy | Electric resistance welding | 8*2.0 |
| Fig. 3: surperficial subsides type | 7.0 | 5.0 | 1.2 | Pottery | Parallel weldering | 5*2.5 |
| Fig. 5: the present invention | 7.0 | 4.0 | 1.8 | Ferroalloy | Electric resistance welding | 4*1.8 |
The present invention's 7040 type quartz-crystal resonator (Fig. 5) core technologies are: when quartz-crystal resonator reduced the substrate height to 0.4mm-0.7mm, still controlled through frequency, resistance characteristic behind the electric resistance welding, the frequency scattered error was less than 10ppm; Its main path is through adopting the quartz wafer of miniaturization; Shorten contact spacing and insulator pitch of holes; Substrate is shortened at length direction, improve the intensity of substrate, thereby solved quartz-crystal resonator after the substrate height reduces; Frequency and resistance affected by force behind electric resistance welding changes greatly, can't guarantee the problem of electric parameter; Realized the target of quartz-crystal resonator miniaturization under the electric resistance welding mode.
Make principle:
1) quartz wafer is selected: 4*1.8mm quartz wafer, frequency range from 10MHz-50MHz overtone frequency scope from 30MHz-125MHz;
2) shell: the wide * height of the long * of shell sizes is 6.5mm*1.20mm*0.15mm; Select for use iron-clad to electroplate scheme;
3) reed: thickness changes 0.08mm into by 0.10mm; Be 6～8 ° of oblique angles by change into base plate parallel with base plate;
4) substrate: the wide * height of the long * of sizes of substrate is 6.5mm*3.75mm*0.7mm;
5) insulator: the diameter * height of insulator sizes is φ 1.1mm*0.7mm.
Processing technology
(1), and does the nickel plating wicking and handle with insulator 5, lead-in wire 6, electroplate substrate 2 sinter moldings;
(2) spot welding reed 4 on substrate lead-in wire ailhead;
(3), be connected on the reed 4 with conducting resinl with 4*1.8mm specification quartz wafer;
(4) carry out the frequency adjustment;
(5) encapsulate completion with the electric resistance welding mode, process the wire type quartz-crystal resonator.
Embodiment 2
Be that with the difference of embodiment 1 spacing is 4mm between two reed 4 outer end A, the B, two insulator 5 center distance 2mm, the height of substrate 2 is 0.4mm, and quartz wafer is 3.5*1.8mm, and the press seal mode encapsulates for the electric resistance welding mode; Angle a between reed 4 and the substrate 2 is 6～8 ° of oblique angles.
Wire type quartz-crystal resonator length is at 6mm, and width is at 3mm, and height is at 1.5mm.
1) quartz wafer is selected: the 3.5*1.8mm quartz wafer, and frequency range is from 10MHz-50MHz; The overtone frequency scope is from 30MHz-125MHz;
2) shell: the wide * height of the long * of shell sizes is 6.5mm*1.0mm*0.15mm;
3) substrate: the wide * height of the long * of sizes of substrate is 6.5mm*3.75mm*0.5mm;
4) insulator: the diameter * height of insulator sizes is φ 1.1mm*0.5mm.
Embodiment 3
With reference to figure 8; Be with the difference of embodiment 1; Processing technology is after sealing only completion with the electric resistance welding mode, substrate also puts insulation spacer 32 times, and pad 3 has the opening 7 and groove 8 that lead-in wire 6 passes; To go between and 6 bend in the inserted shim, be made into height 2.5mm surface attaching type quartz-crystal resonator.
Effect: above embodiment 7040 type electric resistance welding mode quartz-crystal resonator wire type volumes are 6.5mm*3.75mm*1.5mm; The surface attaching type volume is 7mm*4mm*2mm; Small product size is 25% of existing wire type quartz-crystal resonator, and material cost is 50% of a surface sticked quartz crystal resonator, and material domesticizes fully, can produce in batches, has reached product miniaturization and the low purpose of production cost.
The present invention can have the various deformation scheme; Above-mentionedly be merely instance of the present invention; Be not so limit to interest field of the present invention; All lead-in wire shape quartz-crystal resonator height are processed into surface sticked quartz crystal resonator height and all are contained within the interest field of the present invention at 2.5mm and following product at 1.8mm and following.
Claims (8)
1. quartz-crystal resonator comprises the substrate (2) of top covering shell (1), and substrate (2) constitutes pedestal with insulator (5), lead-in wire (6), connects on the ailhead of lead-in wire (6) to be located at the reed (4) that is used to support quartz wafer in the shell (1), it is characterized in that
Two reeds (4) outer end spacing is 4.5mm and following; Two insulators (5) center distance is 2.5mm and following; The height of substrate (2) is 0.7mm and following, and quartz wafer is 4*1.8mm and following, frequency range 10MHz-50MHz; Overtone frequency scope 30MHz-125MHz, the press seal mode encapsulates for the electric resistance welding mode;
Angle (a) between reed (4) and the substrate (2) is 6～8 ° of oblique angles.
2. according to the said quartz-crystal resonator of claim 1, it is characterized in that said
Two reeds (4) outer end spacing is 3.5-4.5mm, two insulators (5) center distance 2-2.5mm, and the height of substrate (2) is 0.4-0.7mm, quartz wafer is (3.5-4) * 1.8mm.
3. according to the said quartz-crystal resonator of claim 1, it is characterized in that
Resonator length is at 7mm and following, and width is at 4mm and following, and wire type resonator height is at 1.8mm and following, and surface attaching type resonator height is at 2.5mm and following.
4. according to the said quartz-crystal resonator of claim 3, it is characterized in that
Resonator length is 6-7mm, and width is 3-4mm, and wire type resonator height is 1.5-1.8mm, and surface attaching type resonator height is 2-2.5mm.
5. according to the said quartz-crystal resonator of claim 1, it is characterized in that
1) quartz wafer is selected: the 4*1.8mm quartz wafer;
2) shell: the wide * height of the long * of shell sizes is 6.5mm*1.20mm*0.15mm;
3) substrate: the wide * height of the long * of sizes of substrate is 6.5mm*3.75mm*0.7mm;
4) insulator: the diameter * height of insulator sizes is φ 1.1mm*0.7mm.
6. according to the said quartz-crystal resonator of claim 1, it is characterized in that
1) quartz wafer is selected: the 3.5*1.8mm quartz wafer;
2) shell: the wide * height of the long * of shell sizes is 6.5mm*1.0mm*0.15mm;
3) substrate: the wide * height of the long * of sizes of substrate is 6.5mm*3.75mm*0.5mm;
4) insulator: the diameter * height of insulator sizes is φ 1.1mm*0.5mm.
7. the processing method of the said quartz-crystal resonator of the arbitrary claim of claim 1-6 is characterized in that comprising the steps
(1), and does the nickel plating wicking and handle with insulator, lead-in wire, electroplate the substrate sinter molding;
(2) spot welding reed on substrate lead-in wire ailhead;
(3) with 4*1.8mm and following specification quartz wafer, be connected on the reed with conducting resinl;
(4) carry out the frequency adjustment;
(5) encapsulate completion with the electric resistance welding mode, be made into the wire type quartz-crystal resonator.
8. the processing method of the said quartz-crystal resonator of claim 7 is characterized in that also comprising
(6) put and having the opening that passes of lead-in wire and the insulation spacer of groove, lead-in wire is bended in the opening and groove of inserted shim, be made into the surface attaching type quartz-crystal resonator.
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| CN2010101594738A CN101814904B (en) | 2010-04-24 | 2010-04-24 | Quartz crystal resonator and manufacture process thereof |
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| CN2010101594738A CN101814904B (en) | 2010-04-24 | 2010-04-24 | Quartz crystal resonator and manufacture process thereof |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102064791B (en) * | 2010-10-21 | 2013-09-18 | 南京中电熊猫晶体科技有限公司 | Surface mounting type quartz crystal resonator metal seal welding electrode |
| CN102868382B (en) * | 2012-09-21 | 2015-05-27 | 成都晶宝时频技术股份有限公司 | Coating electrode of SMD (surface mounted device) quartz-crystal resonator |
| CN102904545A (en) * | 2012-10-10 | 2013-01-30 | 日照汇丰电子有限公司 | Micro-crystal resonator |
| CN103840787A (en) * | 2013-12-31 | 2014-06-04 | 四川索斯特电子有限公司 | Quartz crystal resonator base |
| CN106487348A (en) * | 2016-12-30 | 2017-03-08 | 四川索斯特电子有限公司 | Crystal resonator |
| KR101942734B1 (en) * | 2017-05-18 | 2019-01-28 | 삼성전기 주식회사 | Bulk-acoustic wave resonator |
| CN114826185B (en) * | 2022-05-23 | 2023-03-10 | 河北时硕微芯科技有限公司 | Surface acoustic wave filter packaging method and structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201122937Y (en) * | 2007-12-04 | 2008-09-24 | 成都奔月科技有限公司 | Minitype quartz-crystal resonator |
| CN201252519Y (en) * | 2008-09-11 | 2009-06-03 | 唐山汇通电子有限公司 | Metal-packaged SMD quartz resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005229338A (en) * | 2004-02-13 | 2005-08-25 | Miyota Kk | Sealing and manufacturing method of crystal resonator |
| CN200983575Y (en) * | 2006-12-22 | 2007-11-28 | 金华市创捷电子有限公司 | Quartz crystal resonator |
| CN201278514Y (en) * | 2008-10-18 | 2009-07-22 | 日照旭日电子有限公司 | Resonator base |
| CN201717839U (en) * | 2010-04-24 | 2011-01-19 | 李斌 | Quartz crystal resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201122937Y (en) * | 2007-12-04 | 2008-09-24 | 成都奔月科技有限公司 | Minitype quartz-crystal resonator |
| CN201252519Y (en) * | 2008-09-11 | 2009-06-03 | 唐山汇通电子有限公司 | Metal-packaged SMD quartz resonator |
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Effective date of registration: 20101102 Address after: 264006 No. 6, Heilongjiang Road, Yantai economic and Technological Development Zone, Shandong, China Applicant after: Li Bin Co-applicant after: Huang Yi Address before: 264006 No. 6, Heilongjiang Road, Yantai economic and Technological Development Zone, Shandong, China Applicant before: Daming Electronics Co., Ltd. |
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Assignee: YANTAI DYNAMIC ELECTRONICS CO., LTD. Assignor: Li Weiqiang|Li Bin|Huang Yi Contract record no.: 2011370000635 Denomination of invention: Quartz crystal resonator and manufacture process thereof License type: Exclusive License Open date: 20100825 Record date: 20111231 |
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Effective date of registration: 20160629 Address after: 264006 No. 6, Heilongjiang Road, Yantai Development Zone, Shandong Patentee after: YANTAI DYNAMIC ELECTRONICS CO., LTD. Address before: 264006 No. 6, Heilongjiang Road, Yantai economic and Technological Development Zone, Shandong, China Patentee before: Li Bin Patentee before: Huang Yi Patentee before: Li Weiqiang |